Abstract: A semiconductor storage device includes: a semiconductor substrate; a plurality of circuit regions; and an element isolation region having a trench shape formed between the circuit regions. In the element isolation region including a thermal oxide film and a silicon oxide film, a sub-trench is formed in a bottom corner portion, and the thermal oxide film covers at least an inner wall of the sub-trench.

Abstract: There is provided a semiconductor device including: a conductive support including a first die pad and a second die pad having a potential different from a potential of the first die pad; a first semiconductor element mounted on the first die pad; a second semiconductor element mounted on the second die pad; and a sealing resin that covers the first semiconductor element, the second semiconductor element, and at least a portion of the conductive support.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a substrate, a well, an oxidation layer, a gate electrode and a shared source/drain electrode. The substrate has a first surface and a second surface opposite to each other. The well is formed in the substrate. The substrate and the well have a first conductivity type and a second conductivity type respectively. The oxidation layer is formed in the well. The gate electrode is formed above the first surface and has a first opening. The shared source/drain electrode is formed near the first surface in the oxidation layer and exposed from the first opening. The shared source/drain electrode has the first conductivity type.

Abstract: A manufacturing method of a fin semiconductor device is disclosed. The method includes: providing a substrate; etching the substrate the first time to form a fin channel structure which protrudes from the substrate; forming a protective oxide layer on two sidewalls and the top surface of the fin channel structure; etching a the second time to form the base part of the fin channel structure, wherein the base part is not covered by the protective layer; oxidizing the base part of the fin channel, when the upper part of the fin channel is blocked from oxidation by the protective layer; removing both the protective layer and the oxidized base part of the fin channel structure, so that the upper part of the fin channel structure is suspended over the substrate.

Abstract: A semiconductor device of the present invention includes a semiconductor layer of a first conductivity type having a cell portion and an outer peripheral portion disposed around the cell portion, formed with a gate trench at a surface side of the cell portion, and a gate electrode buried in the gate trench via a gate insulating film, forming a channel at a portion lateral to the gate trench at ON-time, the outer peripheral portion has a semiconductor surface disposed at a depth position equal to or deeper than a depth of the gate trench, and the semiconductor device further includes a voltage resistant structure having a semiconductor region of a second conductivity type formed in the semiconductor surface of the outer peripheral portion.

Abstract: A wiring structure includes first to third metal patterns on a substrate. The first metal pattern extends in a second direction and has a first width in a third direction. The second metal pattern extends in the third direction to cross the first metal pattern and have a second width in the second direction. The third metal pattern is connected to the first and second metal patterns at an area where the first and second metal patterns cross each other, and has a substantially rectangular shape with concave portions in each quadrant. The third metal pattern has a third width defined as a minimum distance between opposite ones of the concave portions in a fourth direction having an acute angle to the second and third directions, which is less or equal to than a smaller of the first and second widths.

Abstract: A method of manufacturing a semiconductor device includes disposing two or more fins each having an initial fin profile on a substrate. A sacrificial oxide layer is grown on a first fin and a second fin of the two or more fins. The sacrificial oxide layer of the first and second fins is etched to trim the fin and to generate a next fin profile for the first and second fins. The growing and etching is repeated to trim the first and second fins such that the number of repetitions for the first fin and the second fin are different. Gate structures are formed over the two or more fins.

Abstract: The present disclosure provides a flexible display device and a manufacturing method. The manufacturing method includes: forming a layer of flexible display devices on a support plate; etching the layer of flexible display devices on the support plate to expose a portion of the support plate at a cutting region, the cutting region being a predetermined region between two adjacent flexible display devices; and removing the layer of flexible display devices from the support plate after the etching process so as to obtain a plurality of flexible display devices separated from each other.

Abstract: Methods for doping a semiconductor layer include forming a first mask on a first region of a semiconductor layer. A second region of the semiconductor layer, that is not covered by the first mask, is doped. A second mask is formed on the second region of the semiconductor layer. The first mask is etched away. The first region of the semiconductor layer is doped.

Abstract: Gate structures and methods of forming the gate structures are described. In some embodiments, a method includes forming source/drain regions in a substrate, and forming a gate structure between the source/drain regions. The gate structure includes a gate dielectric layer over the substrate, a work function tuning layer over the gate dielectric layer, a metal-containing compound over the work function tuning layer, and a metal over the metal-containing compound, wherein the metal-containing compound comprises the metal as an element of the compound.

Abstract: A semiconductor device including a substrate having a major surface. The semiconductor device further includes a dielectric material on the major surface of the substrate. The semiconductor device further includes a first plurality of fins extending from the major surface of the substrate, wherein the dielectric material surrounding each fin of the first plurality of fins has a first thickness. The semiconductor device further includes a second plurality of fins extending from the major surface of the substrate, wherein a first fin of the second plurality of fins is on a first side of the first plurality of fins, a second fin of the second plurality of fins is on a second side of the first plurality of fins opposite the first side, the dielectric material surround each fin of the second plurality of fins has a second thickness, and the second thickness is different from the first thickness.

Abstract: Some embodiments include an integrated assembly which has a semiconductor material with a surface. A first layer is over and directly against the surface. The first layer includes oxygen and a first metal. The relative amount of oxygen to the first metal is less than or equal to an amount sufficient to form stoichiometric metal oxide throughout the first layer. A second metal is over and directly against the first layer. A second layer is over and directly against the second metal. The second layer includes nitrogen and a third metal. Some embodiments include an integrated assembly which has a semiconductor material with a surface. A metal is adjacent the surface and is spaced from the surface by a distance of less than or equal to about 10 ?. There is no metal germanide or metal silicide between the metal and the surface.

Abstract: A semiconductor device and a method of forming the same, the semiconductor device includes a substrate, a gate structure and an epitaxial structure. The gate structure is disposed on the substrate, and the epitaxial structure is disposed in the substrate, at one side of the gate structure. The epitaxial structure includes a portion being protruded from a top surface of the substrate, and the portion includes a discontinuous sidewall, with a distance between a turning point of the discontinuous sidewalls and the gate structure being a greatest distance between the epitaxial structure and the gate structure.

Abstract: The present disclosure provides a thin film transistor, a thin film transistor array, and a method for detecting an object to be detected, wherein the thin film transistor is configured to detect a parameter of an object to be detected bound with a metal ion and includes an active layer, wherein: a carrier of the active layer without a metal element contained in the metal ion bound is of a first mobility, and a carrier of the active layer with the metal element bound is of a second mobility different from the first mobility.

Abstract: A flexible display apparatus including: a first film including a first surface and a second surface that are opposite each other, and a first groove formed in the first surface, the first film having a first rigidity; a third film on the second surface of the first film; a fourth film facing the third film; an emission display unit between and encapsulated by the third film and the fourth film; and a second film on the fourth film and facing the first film, the second film having a second rigidity that is less than the first rigidity.

Abstract: Semiconductor devices and methods for forming semiconductor devices include opening at least one contact via through a sacrificial material down to contacts. Sides of the at least one contact via are lined by selectively depositing a barrier on the sacrificial material, the barrier extending along sidewalls of the at least one contact via from a top surface of the sacrificial material down to a bottom surface of the sacrificial material proximal to the contacts such that the contacts remain exposed. A conductive material is deposited in the at least one contact via down to the contacts to form stacked contacts having the hard mask on sides thereof. The sacrificial material is removed.

Abstract: An integrated circuit (IC) includes a glass substrate and a buried oxide layer. The IC additionally includes a first semiconductor device coupled to the glass substrate. The first semiconductor device includes a first gate and a first portion of a semiconductive layer coupled to the buried oxide layer. The first gate is located between the glass substrate and the first portion of the semiconductive layer and between the glass substrate and the buried oxide layer. The IC additionally includes a second semiconductor device coupled to the glass substrate. The second semiconductor device includes a second gate and a second portion of the semiconductive layer. The second gate is located between the glass substrate and the second portion of the semiconductive layer. The first portion is discontinuous from the second portion.

Abstract: A method for shallow trench isolation structures in a semiconductor device and a semiconductor device including the shallow trench isolation structures are disclosed. In an embodiment, the method may include forming a trench in a substrate; depositing a first dielectric liner in the trench; depositing a first shallow trench isolation (STI) material over the first dielectric liner, the first STI material being deposited as a conformal layer; etching the first STI material; depositing a second STI material over the first STI material, the second STI material being deposited as a flowable material; and planarizing the second STI material such that top surfaces of the second STI material are co-planar with top surfaces of the substrate.

Abstract: Provided is a semiconductor device including a substrate, an isolation structure, a barrier structure, a first conductive layer, a second conductive layer, a first gate dielectric layer, and a second gate dielectric layer. The substrate has a first region and a second region. The barrier structure is located on the isolation structure. The first conductive layer is located on the first region. The second conductive layer is located on the second region. The first gate dielectric layer is located between the first conductive layer and the substrate in the first region. The second gate dielectric layer is located between the second conductive layer and the substrate in the second region. The first gate dielectric layer and the second gate dielectric layer are separated by the isolation structure. A method of manufacturing the semiconductor device is also provided.

Abstract: A semiconductor memory device may include a substrate, gate electrode structures stacked on the substrate, insulation patterns between the gate electrode structures, vertical channels penetrating through the gate electrode structures and the insulation patterns, and a data storage pattern. The vertical channels may be electrically connected to the substrate. The data storage pattern may be arranged between the gate electrode structures and the vertical channels. Each of the gate electrode structures may include a barrier film, a metal gate, and a crystal grain boundary plugging layer. The crystal grain boundary plugging layer may be between the barrier film and the metal gate.

Abstract: A method of forming vertical fins on a substrate at the same time, the method including, forming a mask segment on a first region of the substrate while exposing the surface of a second region of the substrate, removing a portion of the substrate in the second region to form a recess, forming a fin layer in the recess, where the fin layer has a different material composition than the substrate, and forming at least one vertical fin on the first region of the substrate and at least one vertical fin on the second region of the substrate, where the vertical fin on the second region of the substrate includes a fin layer pillar formed from the fin layer and a substrate pillar.

Abstract: Embodiments of the present disclosure provide a self-aligned contact for a trench power MOSFET device. The device has a layer of nitride provided over the conductive material in the gate trenches and over portions of mesas between every two adjacent contact structures. Alternatively, the device has an oxide layer over the conductive material in the gate trenches and over portions of mesas between every two adjacent contact structures. It is emphasized that this abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: A method for manufacturing a vertical transistor device includes forming a first plurality of fins in a first device region on a substrate, and forming a second plurality of fins in a second device region on the substrate. In the method, a plurality of dummy gate layers are formed on the substrate and around portions of each of the first and second plurality of fins in the first and second device regions. A barrier layer is formed between the first and second device regions. More specifically, the barrier layer is formed between respective gate regions of the first and second device regions. The method also includes removing the plurality of dummy gate layers from the first and second device regions, and replacing the removed plurality of dummy gate layers with a plurality of gate metal layers in the first and second device regions.

Abstract: Semiconductor devices and methods of forming thereof are disclosed. A substrate with different device regions defined in the substrate is provided. A deep trench isolation (DTI) structure is formed in the substrate to isolate the different device regions. The DTI structure includes a fill material and a dielectric layer surrounding the fill material in the DTI structure. Local oxidation of the substrate is performed over the DTI structure to form a thermal dielectric layer which overlaps the DTI structure. The thermal dielectric layer which overlaps the DTI structure forms a thick top corner dielectric in the DTI structure.

Abstract: A semiconductor device adopts an isolation scheme to protect low voltage transistors from high voltage operations. The semiconductor device includes a substrate, a buried layer, a transistor well region, a first trench, and a second trench. The substrate has a top surface and a bottom surface. The buried layer is positioned within the substrate, and the transistor well region is positioned above the buried layer. The first trench extends from the top surface to penetrate the buried layer, and the first trench has a first trench depth. The second trench extending from the top surface to penetrate the buried layer. The second trench is interposed between the first trench and the transistor well region. The second trench has a second trench depth that is less than the first trench depth.

Abstract: The present disclosure relates to the technical field of semiconductors, and discloses a semiconductor device and a manufacturing method therefor. The method includes: providing a substrate structure, where the substrate structure includes: a substrate having a first device region and a second device region, a first dummy gate structure at the first device region, a second dummy gate structure at the second device region, and an LDD region below the first dummy gate structure. The first dummy gate structure includes a first dummy gate dielectric layer at the first device region, a first dummy gate on the first dummy gate dielectric layer, and a first spacer layer at a side wall of the first dummy gate. The second dummy gate structure includes a second dummy gate dielectric layer at the second device region, a second dummy gate on the second dummy gate dielectric layer, and a second spacer layer at a side wall of the second dummy gate.

Abstract: An integrated circuit device includes a fin-type active area protruding from a substrate; a plurality of liners sequentially covering lower side walls of the fin-type active area; a device isolation layer covering the lower side walls of the fin-type active area with the plurality of liners between the device isolation layer and the fin-type active area; and a gate insulating layer extending to cover a channel region of the fin-type active area, the plurality of liners, and the device isolation layer, and including protrusions located on portions of the gate insulating layer which cover the plurality of liners.

Abstract: A semiconductor device includes a substrate. The semiconductor device further includes a first transistor on the substrate, wherein the first transistor includes a first source/drain electrode. The semiconductor device further includes a second transistor on the substrate, wherein the second transistor includes a second source/drain electrode. The semiconductor device further includes an insulating layer extending into the substrate, wherein the insulating layer directly contacts the first source/drain electrode and the second source/drain electrode.

Abstract: A memory structure including a substrate, stacked structures, at least one isolation structure, a second conductive layer, and a second dielectric layer is provided. The stacked structures are disposed on the substrate. Each of the stacked structures includes a first dielectric layer and a first conductive layer sequentially disposed on the substrate. A first opening is located between two adjacent stacked structures, and the first opening extends into the substrate. The isolation structure is disposed in the first opening and covers a sidewall of the first dielectric layer. The isolation structure has a recess, such that a top profile of the isolation structure is shaped as a funnel. The second conductive layer is disposed on the stacked structures and fills the first opening. The second dielectric layer is disposed between the second conductive layer and the first conductive layer.

Abstract: Semiconductor structures, devices, and methods of forming the structures and device are disclosed. Exemplary structures include multi-gate or FinFET structures that can include both n-channel MOS (NMOS) and p-channel MOS (PMOS) devices to form CMOS structures and devices on a substrate. The devices can be formed using selective epitaxy and shallow trench isolation techniques.

Abstract: An integrated circuit device includes a substrate having a first portion in a first device region and a second portion in a second device region. A first semiconductor strip is in the first device region. A dielectric liner has an edge contacting a sidewall of the first semiconductor strip, wherein the dielectric liner is configured to apply a compressive stress or a tensile stress to the first semiconductor strip. A Shallow Trench Isolation (STI) region is over the dielectric liner, wherein a sidewall and a bottom surface of the STI region is in contact with a sidewall and a top surface of the dielectric liner.

Abstract: A semiconductor device has a silicide source/drain region is fabricated by growing silicon on an epitaxial region including silicon and either germanium or carbon. In the method, a gate electrode is formed on a semiconductor substrate with a gate insulating layer interposed therebetween. An epitaxial layer is formed in the semiconductor substrate at both sides of the gate electrodes. A silicon layer is formed to cap the epitaxial layer. The silicon layer and a metal material are reacted to form a silicide layer. In a PMOS, the epitaxial layer has a top surface and inclined side surfaces that are exposed above the upper surface of the active region. The silicon layer is grown on the epitaxial layer in such a way as to cap the top and inclined surfaces.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to active and passive radio frequency (RF) components with deep trench isolation structures and methods of manufacture. The structure includes a bulk high resistivity wafer with a deep trench isolation structure having a depth deeper than a maximum depletion depth at worst case voltage bias difference between devices which are formed on the bulk high resistivity wafer.

Abstract: Provided is a solid state image pickup element including a MOS type transistor which amplifies a signal which is based on electric charges generated in a photoelectric conversion unit of a pixel. A channel region of the transistor is divided into a source-side region and a drain-side region. When a conductivity type of the transistor is defined as a first conductivity type and a conductivity type which is opposite to the first conductivity type is defined as a second conductivity type, a concentration of a first conductivity type impurity in the source-side region is higher than a concentration of the first conductivity type impurity in the drain-side region or a concentration of a second conductivity type impurity in the drain-side region is higher than a concentration of the second conductivity type impurity in the source-side region.

Abstract: A semiconductor device includes a first device isolation layer defining active regions spaced apart from each other along a first direction on a substrate, second device isolation layers defining a plurality of active patterns protruding from the substrate, the second device isolation layers extending in the first direction to be spaced apart from each other in a second direction and connected to the first device isolation layer, a gate structure extending in the second direction on the first device isolation layer between the active regions, a top surface of the second device isolation layer being lower than a top surface of the active pattern, a top surface of the first device isolation layer being higher than the top surface of the active pattern, and at least part of a bottom surface of the gate structure being higher than the top surface of the active pattern.

Abstract: Structures including a vertical field-effect transistor and fabrication methods for a structure including a vertical field-effect transistor. A vertical field-effect transistor includes a source/drain region located in a section of a semiconductor layer, a first semiconductor fin projecting from the source/drain region, a second semiconductor fin projecting from the source/drain region, and a gate electrode on the section of the semiconductor layer and coupled with the first semiconductor fin and with the second semiconductor fin. The structure further includes a contact located in a trench defined in the section of the semiconductor layer between the first semiconductor fin and the second semiconductor fin. The contact is coupled with the source/drain region of the vertical field-effect transistor.

Abstract: A method of making a semiconductor device is provided. The method includes forming a deep well (DWELL) and a well (WELL) in a first region of a substrate, the WELL adjacent a surface of the substrate so that an interface between the WELL and DWELL is exposed on the surface of the substrate. A channel for a DEMOS transistor is formed in the first region over the interface and includes a first channel formed in the WELL and a second channel formed in the DWELL. A gate layer is deposited and patterned to concurrently form in the first region a first gate for the DEMOS transistor and in a second region a second gate for an ESD device. Dopants are implanted in the first and second regions to concurrently form a drain extension of the DEMOS transistor, and an ESD diffusion region of the ESD device.

Abstract: A method is provided for fabricating a semiconductor device. The method includes providing a semiconductor substrate having a gate structure; and forming offset sidewall spacers around the gate structure. The method also includes forming trenches in the semiconductor substrate at outside of the gate structure; and forming isolation layers on side surfaces of the trenches to prevent diffusions between subsequently formed doping regions. Further, the method includes removing at least portions of the offset sidewall spacers to expose portions of the surface of the semiconductor substrate between the gate structure and the trenches; and forming filling layers with a top surface higher than the surface of the semiconductor substrate by filling the trenches and covering portions of the surface of the semiconductor substrate between the trenches and the gate structure. Further, the method also includes forming doping regions configured as raised source/drain regions in the filling layers.

Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a gate stack over a semiconductor substrate and a spacer element over a sidewall of the gate stack. The spacer element is substantially free of oxygen. The semiconductor device structure also includes a dielectric layer over the semiconductor substrate, and the dielectric layer surrounds the gate stack and the spacer element. The semiconductor device structure further includes a conductive contact penetrating through the dielectric layer and electrically connected to a conductive feature over the semiconductor substrate. An angle between a sidewall of the conductive contact and a top surface of the spacer element is in a range from about 90 degrees to about 120 degrees, and the conductive contact covers a portion of the spacer element.

Abstract: An integrated circuit device includes first and second fin-type active regions having different conductive type channel regions, a first device isolation layer covering both sidewalls of the first fin-type active region, and a second device isolation layer covering both sidewalls of the second fin-type active region. The first device isolation layer and the second device isolation layer have different stack structures. To manufacture the integrated circuit device, the first device isolation layer covering both sidewalls of the first fin-type active region and the second device isolation layer covering both sidewalls of the second fin-type active region are formed after the first fin-type active region and the second fin-type active region are formed. The first device isolation layer and the second device isolation layer are formed to have different stack structure.

Abstract: One illustrative method disclosed includes, among other things, forming an initial conductive source/drain structure that is conductively coupled to a source/drain region of a transistor device, performing a recess etching process on the initial conductive source/drain structure to thereby define a stepped conductive source/drain structure with a cavity defined therein, forming a non-conductive structure in the cavity, forming a layer of insulating material above the gate structure, the stepped conductive source/drain structure and the non-conductive structure, forming a gate contact opening in the layer of insulating material and forming a conductive gate contact in the gate contact opening that is conductively coupled to the gate structure.

Abstract: A semiconductor device that has a passing gate with a single gate electrode and a main gate with lower and upper gate electrodes mitigates gate induced drain leakage (GIDL). Additional elements that help mitigate GIDL include the upper gate electrode having a lower work function than the lower gate electrode, and the lower gate electrode being disposed below a storage node junction region while the upper gate electrode is disposed at a same level as the storage node junction region.

Abstract: A transistor device including a semiconductor material layer, a gate layer, and an insulation layer between the gate layer and the semiconductor material layer is provided. The semiconductor material layer includes a first conductive portion, a second conductive portion, a channel portion between the first conductive portion and the second conductive portion, and a first protruding portion formed integrally. The channel portion has a first boundary adjacent to the first conductive portion, a second boundary adjacent to the second conductive portion, a third boundary, and a fourth boundary. The third boundary and the fourth boundary connect the terminals of the first boundary and the second boundary. The first protruding portion is protruded outwardly from the third boundary of the channel portion. The first gate boundary and the second gate boundary are overlapped with the first boundary and the second boundary of the channel portion.

Abstract: An integrated circuit with DSL borders perpendicular to the transistor gates primarily inside the nwell and with DSL borders parallel to the transistor gates primarily outside the nwell. A method for forming an integrated circuit with DSL borders perpendicular to the transistor gates primarily inside the nwell and with DSL borders parallel to the transistor gates primarily outside the nwell.

Abstract: A device includes a substrate, a gate dielectric over the substrate, and a gate electrode over the gate dielectric. A drain region and a source region are disposed on opposite sides of the gate electrode. Insulation regions are disposed in the substrate, wherein edges of the insulation regions are in contact with edges of the drain region and the source region. A dielectric mask includes a portion overlapping a first interface between the drain region and an adjoining portion of the insulation regions. A drain silicide region is disposed over the drain region, wherein an edge of the silicide region is substantially aligned to an edge of the first portion of the dielectric mask.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to switches with deep trench depletion and isolation structures and methods of manufacture. The structure includes a bulk substrate with a fully depleted region below source and drain regions of at least one gate stack and confined by deep trench isolation structures lined with doped material.

Abstract: A semiconductor device includes first and second bit line structures on a substrate and spaced apart from each other, a via plug partially filling between the first and second bit line structures, a via pad in contact with an upper surface of the via plug and an upper sidewall of the first bit line structure, the via pad being spaced apart from an upper portion of the second bit line structure, a first cavity filled with air being between the via plug and the first bit line structure and a second cavity filled with air between the via plug and the second bit line structure, A gap capping spacer having a first portion on the upper sidewall of the first bit line structure and a second portion covers the first air spacer. A horizontal width of the first portion is smaller than that of the second portion.

Abstract: A method includes forming a fin on a substrate. A first liner is formed on the fin. A first dielectric layer is formed above the first liner. A patterned hard mask is formed above the first dielectric layer and has a fin cut opening defined therein. Portions of the first dielectric layer and the first liner disposed below the fin cut opening are removed to expose a portion of the fin. The patterned hard mask layer is removed. The exposed portion of the fin is oxidized to define a diffusion break in the fin.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a heterojunction bipolar transistor with a stress component and methods of manufacture. The heterojunction bipolar transistor includes a collector region, an emitter region and a base region. Stress material is formed within a trench of a substrate and surrounding at least the collector region and the base region.

Abstract: The present disclosure provides semiconductor devices, fin field-effect transistors and fabrication methods thereof. An exemplary fin field-effect transistor includes a semiconductor substrate; an insulation layer configured for inhibiting a short channel effect and increasing a heat dissipation efficiency of the fin field-effect transistor formed over the semiconductor substrate; at least one fin formed over the insulation layer; a gate structure crossing over at least one fin and covering top and side surfaces of the fin formed over the semiconductor substrate; and a source formed in the fin at one side of the gate structure and a drain formed in the fin at the other side of the gate structure.