Abstract: Semiconductor devices and methods of manufacturing semiconductor devices with differing threshold voltages are provided. In embodiments the threshold voltages of individual semiconductor devices are tuned through the removal and placement of differing materials within each of the individual gate stacks within a replacement gate process, whereby the removal and placement helps keep the overall process window for a fill material large enough to allow for a complete fill.

Abstract: A device includes a first nanostructure; a second nanostructure over the first nanostructure; a high-k gate dielectric around the first nanostructure and the second nanostructure, the high-k gate dielectric having a first portion on a top surface of the first nano structure and a second portion on a bottom surface of the second nanostructure; and a gate electrode over the high-k gate dielectric. The gate electrode comprises: a first work function metal around the first nanostructure and the second nanostructure, the first work function metal filling a region between the first portion of the high-k gate dielectric and the second portion of the high-k gate dielectric; and a tungsten layer over the first work function metal, the tungsten layer being free of fluorine.

Abstract: A device includes a first nanostructure; a second nanostructure over the first nanostructure; a first high-k gate dielectric around the first nanostructure; a second high-k gate dielectric around the second nanostructure; and a gate electrode over the first and second high-k gate dielectrics. The gate electrode includes a first work function metal; a second work function metal over the first work function metal; and a first metal residue at an interface between the first work function metal and the second work function metal, wherein the first metal residue has a metal element that is different than a metal element of the first work function metal.

Abstract: A semiconductor device includes first and second semiconductor fins extending from a substrate and a source/drain region epitaxially grown in recesses of the first and second semiconductor fins. A top surface of the source/drain region is higher than a surface level with top surfaces of the first and second semiconductor fins. The source/drain region includes a plurality of buffer layers. Respective layers of the plurality of buffer layers are embedded between respective layers of the source/drain region.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a layout optimization for radio frequency (RF) device performance and methods of manufacture. The structure includes: a first active device on a substrate; source and drain diffusion regions adjacent to the first active device; and a first contact in electrical contact with the source and drain diffusion regions and which is spaced away from the first active device to optimize a stress component in a channel region of the first active device.

Abstract: A semiconductor device includes a substrate with first and second areas, a first trench in the first area, and first and second PMOS transistors in the first area and the second area, respectively. The first transistor includes a first gate insulating layer, a first TiN layer on and contacting the first gate insulating layer, and a first gate electrode on and contacting the first TiN layer. The second transistor includes a second gate insulating layer, a second TiN layer on and contacting the second gate insulating layer, and a first TiAlC layer on and contacting the second TiN layer. The first gate insulating layer, the first TiN layer, and the first gate electrode are within the first trench. The first gate electrode does not include aluminum. A threshold voltage of the first transistor is smaller than a threshold voltage of the second transistor.

Abstract: The present disclosure provides a semiconductor device and a fabrication method. The semiconductor device includes: a substrate; a first well region in the substrate, having first ions; an isolation layer in the first well region; a second well region and a third well region, formed in the first well region, located respectively on opposite sides of the isolation layer, having second ions with an opposite conductivity type as the first ions, and with a minimum distance from the isolation layer greater than zero; a first gate structure on the second well region and the first well region; a second gate structure on the third well region and the first well region; a barrier gate on the isolation layer, located between the first gate structure and the second gate structure, and having the second ions; and source-drain doped layers in the second well region and the third well region, respectively.

Abstract: A semiconductor device, and a method of manufacturing, is provided. A dummy gate is formed on a semiconductor substrate. An interlayer dielectric (ILD) is formed over the semiconductor fin. A dopant is implanted into the ILD. The dummy gate is removed and an anneal is performed on the ILD. The implantation and the anneal lead to an enhancement of channel resistance by a reduction in interlayer dielectric thickness and to an enlargement of critical dimensions of a metal gate.

Abstract: A semiconductor device and method of forming thereof includes a first fin and a second fin each extending from a substrate. A first gate segment is disposed over the first fin and a second gate segment is disposed over the second fin. An interlayer dielectric (ILD) layer is adjacent the first gate segment and the second gate segment. A cut region (e.g., opening or gap between first gate structure and the second gate structure) extends between the first and second gate segments. The cut region has a first portion has a first width and a second portion has a second width, the second width is greater than the first width. The second portion interposes the first and second gate segments and the first portion is defined within the ILD layer.

Abstract: A semiconductor structure includes a gate stack on a semiconductor substrate and an etch stop layer disposed on the gate stack and the semiconductor substrate. The etch stop layer includes a first portion disposed on sidewalls of the gate stack and a second portion disposed on a top surface of the semiconductor substrate within a source/drain region. The semiconductor structure further includes a dielectric stress layer disposed on the second portion of the etch stop layer and being free from the first portion of the etch stop layer other than at a corner area formed by the first portion intersecting the second portion. The dielectric stress layer is different from the etch stop layer in composition and is configured to apply a compressive stress to a channel region underlying the gate stack.

Abstract: A semiconductor device including a FET includes an isolation insulating layer disposed in a trench of the substrate, a gate dielectric layer disposed over a channel region of the substrate, a gate electrode disposed over the gate dielectric layer, a source and a drain disposed adjacent to the channel region, and an embedded insulating layer disposed below the source, the drain and the gate electrode and both ends of the embedded insulating layer are connected to the isolation insulating layer.

Abstract: The present disclosure describes a method for the formation of gate stacks having two or more titanium-aluminum (TiAl) layers with different Al concentrations (e.g., different Al/Ti ratios). For example, a gate structure can include a first TiAl layer with a first Al/Ti ratio and a second TiAl layer with a second Al/Ti ratio greater than the first Al/Ti ratio of the first TiAl layer.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a pair of source/drain regions disposed in a substrate. A gate dielectric layer overlies the substrate and is spaced laterally between the pair of source/drain regions. A ferroelectric structure overlies the gate dielectric layer. The ferroelectric structure includes a ferroelectric layer and a grid structure. The ferroelectric layer includes a plurality of segments laterally offset from one another, and the grid structure laterally encloses each segment of the ferroelectric layer.

Abstract: A method of forming a semiconductor device is disclosed. A substrate having a first device region and a second device region is provided. A metal nitride barrier layer is formed to cover the first device region and the second device region. A titanium layer is deposited on the metal nitride barrier layer. The titanium layer is selectively removed from the second device region, thereby exposing the metal nitride barrier layer in the second device region. The titanium layer in the first device region is transformed into a titanium nitride layer. The titanium nitride layer is a work function layer on the first device region.

Abstract: Embodiments described herein generally relate to doping of three dimensional (3D) structures on a substrate. In some embodiments, a conformal dopant containing film may be deposited over the 3D structures. Suitable dopants that may be incorporated in the film include halogen atoms. The film may be subsequently annealed to diffuse the dopants into the 3D structures.

Abstract: Present disclosure provides a FinFET structure, including a fin and a gate surrounding a first portion of the fin. A dopant concentration in the first portion of the fin is lower than about 1E17/cm3. The FinFET structure further includes an insulating layer surrounding a second portion of the fin. The dopant concentration of the second portion of the fin is greater than about 8E15/cm3. The insulating layer includes a lower layer and an upper layer, and the lower layer is disposed over a substrate connecting to the fin and has a dopant concentration greater than about 1E19/cm3.

Abstract: A device includes a first nanostructure; a second nanostructure over the first nanostructure; a high-k gate dielectric around the first nanostructure and the second nanostructure, the high-k gate dielectric having a first portion on a top surface of the first nanostructure and a second portion on a bottom surface of the second nanostructure; and a gate electrode over the high-k gate dielectric. The gate electrode comprises: a first work function metal around the first nanostructure and the second nanostructure, the first work function metal filling a region between the first portion of the high-k gate dielectric and the second portion of the high-k gate dielectric; and a tungsten layer over the first work function metal, the tungsten layer being free of fluorine.

Abstract: A semiconductor device includes a substrate, a conductive wiring which comprises cobalt or copper and is electrically connected to the substrate, an insulating material which electrically isolates the conductive wiring from neighboring wiring, and a first barrier layer which comprises a first cobalt alloy and is disposed between the conductive wiring and the insulating material.

Abstract: A semiconductor device includes a gate structure, a double diffused region, a source region, a drain region, a first gate spacer, and a second gate spacer. The gate structure is over a semiconductor substrate. The double diffused region is in the semiconductor substrate and laterally extends past a first side of gate structure. The source region is in the semiconductor substrate and is adjacent a second side of the gate structure opposite the first side. The drain region is in the double diffused region in the semiconductor substrate and is of a same conductivity type as the double diffused region. The first gate spacer is on the first side of the gate structure. The second gate spacer extends upwardly from the double diffused region along an outermost sidewall of the first gate spacer and terminates prior to reaching a top surface of the gate structure.

Abstract: A semiconductor device including a substrate with a first region and a second region and first and second transistors in the first and second regions, respectively. The first transistor includes a first gate insulating layer on the substrate, a first etch-stop layer, and a first work function layer on the first etch-stop layer. The second transistor includes a second gate insulating layer on the substrate, a second etch-stop layer, and a second work function layer on the second etch-stop layer. At least one of the first and second work function layers is chamfered.

Abstract: A semiconductor device includes a gate structure on a substrate, in which the gate structure includes a silicon layer on the substrate, a titanium nitride (TiN) layer on the silicon layer, a titanium (Ti) layer between the TiN layer and the silicon layer, a metal silicide between the Ti layer and the silicon layer, a titanium silicon nitride (TiSiN) layer on the TiN layer, and a conductive layer on the TiSiN layer.

Abstract: A gate structure, a semiconductor device, and the method of forming a semiconductor device are provided. In various embodiments, the gate structure includes a gate stack and a doped spacer overlying a sidewall of the gate stack. The gate stack contains a doped work function metal (WFM) stack and a metal gate electrode overlying the doped WFM stack.

Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming a dummy gate stack over a semiconductor substrate and forming spacer elements over sidewalls of the dummy gate stack. The method also includes removing the dummy gate stack to form a recess between the spacer elements and forming a metal gate stack in the recess. The method further includes etching back the metal gate stack while the metal gate stack is kept at a temperature that is in a range from about 20 degrees C. to about 55 degrees C. In addition, the method includes forming a protection element over the metal gate stack after etching back the metal gate stack.

Abstract: Provided are an integrated circuit device and a method of manufacturing the same. The integrated circuit device includes: a semiconductor substrate; a device isolation layer defining an active region of the semiconductor substrate; a gate insulating layer on the active region; a gate stack on the gate insulating layer; a spacer on a sidewall of the gate stack; and an impurity region provided on both sides of the gate stack, wherein the gate stack includes a metal carbide layer and a metal layer on the metal carbide layer, wherein the metal carbide layer includes a layer having a carbon content of about 0.01 at % to about 15 at %.

Abstract: A method includes forming a dummy gate structure over a substrate; forming a plurality of gate spacers on opposite sidewalls of the dummy gate structure; forming an interlayer dielectric (ILD) layer surrounding the gate spacers; replacing the dummy gate structure with a metal gate structure; etching back the metal gate structure to form a gate trench between the gate spacers; depositing a first dielectric layer in the gate trench, in which the first dielectric layer has horizontal portions over the metal gate structure and the ILD layer, and vertical portions on sidewalls of the gate spacers; etching the vertical portions of the first dielectric layer until the sidewalls of the gate spacers exposed; and performing depositing the first dielectric layer and etching the vertical portions of the first dielectric layer in an alternate manner.

Abstract: A microelectronic transistor may be fabricated having an airgap spacer formed as a gate sidewall spacer, such that the airgap spacer is positioned between a gate electrode and a source contact and/or a drain contact of the microelectronic transistor. As the dielectric constant of gaseous substances is significantly lower than that of a solid or a semi-solid dielectric material, the airgap spacer may result in minimal capacitive coupling between the gate electrode and the source contact and/or the drain contact, which may reduce circuit delay of the microelectronic transistor.

Abstract: Techniques for forming barrierless contacts filled with Co are provided. In one aspect, a method for forming barrierless contacts includes: forming bottom metal contacts in a first ILD; depositing a second ILD on the bottom metal contacts; forming contact vias in the second ILD landing on the bottom metal contacts; selectively forming a liner on a top surface of the second ILD and on the second ILD along sidewalls of the contact vias; filling the contact vias with a metal; and removing an excess of the metal to form the barrierless contacts whereby metal-to-metal contact is present between the barrierless contacts and the bottom metal contacts. A contact structure is also provided.

Abstract: A semiconductor device, and a method of manufacturing, is provided. A dummy gate is formed on a semiconductor substrate. An interlayer dielectric (ILD) is formed over the semiconductor fin. A dopant is implanted into the ILD. The dummy gate is removed and an anneal is performed on the ILD. The implantation and the anneal lead to an enhancement of channel resistance by a reduction in interlayer dielectric thickness and to an enlargement of critical dimensions of a metal gate.

Abstract: A semiconductor device includes a substrate, a gate stack. The substrate includes a semiconductor fin. The gate stack is disposed on the semiconductor fin. The gate stack includes a dielectric layer disposed over the semiconductor fin, and a metal stack disposed over the dielectric layer and having a first metallic layer and a second metallic layer over the first metallic layer, and a gate electrode disposed over the metal stack. The first metallic layer and the second metallic layer have a first element, and a percentage of the first element in the first metallic layer is greater than that in the second metallic layer.

Abstract: A semiconductor device includes a semiconductor layer. A gate structure is disposed over the semiconductor layer. A spacer is disposed on a sidewall of the gate structure. A height of the spacer is greater than a height of the gate structure. A liner is disposed on the gate structure and on the spacer. The spacer and the liner have different material compositions.

Abstract: The present disclosure is directed to etching compositions that are useful, e.g., for selectively removing tungsten (W) and/or titanium nitride (TiN) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.

Abstract: An integrated ultraviolet (UV) detector includes a silicon carbide (SiC) substrate, supporting metal oxide field effect transistors (MOSFETs), and PN Junction photodiodes. The MOSFET includes a first drain/source implant in the SiC substrate and a second drain/source implant in the SiC substrate. The P-N junction photodiodes include a blanket oxide over the silicon carbide substrate and the gate, an implant extending into the silicon carbide substrate, and an opening extending through the blanket oxide layer down to the silicon carbide substrate on one side of the gate of the P-N junction photodiode.

Abstract: One integrated circuit product disclosed herein includes a first final gate structure for a first transistor device, a second final gate structure for a second transistor device, wherein the first and second transistor devices have a gate width that extends in a gate width direction and a gate length that extends in a gate length direction, and a gate separation structure positioned between the first and second final gate structures, the gate separation structure comprising at least one insulating material. The gate separation structure further has a substantially uniform width in the gate width direction for substantially an entire vertical height of the gate separation structure and a first side surface and a second side surface, wherein an end surface of the first final gate structure contacts the first side surface and an end surface of the second final gate structure contacts the second side surface.

Abstract: Techniques for forming VFETs with differing gate lengths Lg on the same wafer using a gas cluster ion beam (GCIB) process to produce fins of differing heights are provided. In one aspect, a method of forming fins having different heights includes: patterning the fins having a uniform height in a substrate, the fins including at least one first fin and at least one second fin; forming an oxide at a base of the at least one second fin using a low-temperature directional oxidation process (e.g., GCIB oxidation); and removing the oxide from the base of the at least one second fin to reveal the at least one first fin having a height H1 and the at least one second fin having a height H2, wherein H2>H1. VFETs and methods for forming VFETs having different fin heights using this process are also provided.

Abstract: An integrated ultraviolet (UV) detector includes a silicon carbide (SiC) substrate, supporting metal oxide field effect transistors (MOSFETs), Schottky photodiodes, and PN Junction photodiodes. The MOSFET includes a first drain/source implant in the SiC substrate and a second drain/source implant in the SiC substrate. The Schottky photodiodes include another implant in the SiC substrate and a surface metal area configured to pass UV light.

Abstract: Provided are an integrated circuit device and a method of manufacturing the same. The integrated circuit device includes: a semiconductor substrate; a device isolation layer defining an active region of the semiconductor substrate; a gate insulating layer on the active region; a gate stack on the gate insulating layer; a spacer on a sidewall of the gate stack; and an impurity region provided on both sides of the gate stack, wherein the gate stack includes a metal carbide layer and a metal layer on the metal carbide layer, wherein the metal carbide layer includes a layer having a carbon content of about 0.01 at % to about 15 at %.

Abstract: A gate structure, a semiconductor device, and the method of forming a semiconductor device are provided. In various embodiments, the gate structure includes a gate stack and a doped spacer overlying a sidewall of the gate stack. The gate stack contains a doped work function metal (WFM) stack and a metal gate electrode overlying the doped WFM stack.

Abstract: A method of fabricating a semiconductor device includes forming a fin on a substrate. Source/drain regions are arranged on the substrate on opposing sides of the fin. The method includes depositing a semiconductor layer on the source/drain regions. The method includes depositing a germanium containing layer on the fin and the semiconductor layer. The method further includes applying an anneal operation configured to chemically react the semiconductor layer with the germanium containing layer and form a silicon oxide layer.

Abstract: The present invention provides a method and a structure of increasing source and drain contact edge width in a two-dimensional material field effect transistor. The method includes patterning a two-dimensional material over an insulating substrate; depositing a gate dielectric over the two-dimensional material; depositing a top gate over the gate dielectric, wherein the top gate has a hard mask thereon; forming a sidewall spacer around the top gate; depositing an interlayer dielectric oxide over the sidewall spacer and the hard mask; removing the interlayer dielectric oxide adjacent to the sidewall spacer to form an open contact trench; depositing a copolymer coating in the contact trench region; annealing the copolymer to induce a directed self-assembly; performing a two-dimensional material etch over the two-dimensional material; removing the unetched copolymer without etching the gate dielectric; and etching the exposed gate in the source and the drain region to form a metal contact layer.

Abstract: A transistor includes a channel region, a gate stack, and source and drain structures. The channel region comprises silicon germanium and has a first silicon-to-germanium ratio. The gate stack is over the channel region and comprises a silicon germanium oxide layer over the channel region, a high-? dielectric layer over the silicon germanium oxide layer, and a gate electrode over the high-? dielectric layer. The silicon germanium oxide layer has a second silicon-to-germanium ratio. The second silicon-to-germanium ratio is substantially the same as the first silicon-to-germanium ratio. The channel region is between the source and drain structures.

Abstract: A semiconductor device having a hybrid doping distribution and a method of fabricating the semiconductor device are presented. The semiconductor device includes a gate disposed over an active semiconducting region and a first S/D region and a second S/D region each aligned to opposing sides of the gate side walls. The active semiconducting region has a doping profile that includes a first doping region at a first depth beneath the gate and having a first dopant concentration. The doping profile includes a second doping region at a second depth beneath the gate greater than the first depth and having a second dopant concentration less than the first dopant concentration.

Abstract: A semiconductor structure includes a substrate, a plurality of fins disposed over a top surface of the substrate, and a gate stack surrounding a portion of sidewalls of the plurality of fins. The plurality of fins include two or more active device fins comprising a semiconducting material providing vertical transport channels for respective vertical transport field-effect transistors, and two or more edge fins surrounding the two or more active device fins, the two or more edge fins comprising a dielectric material. Thicknesses of one or more layers of the gate stack surrounding the portion of the sidewalls of the two or more edge fins are different than thicknesses of the one or more layers of the gate stack surrounding the portion of the sidewalls of the active device fins. The vertical transport field-effect transistors provided by the active device fins have uniform threshold voltage.

Abstract: A conductive-insulator-semiconductor (CIS) device with low flicker noise is provided. In some embodiments, the CIS device comprises a semiconductor substrate, a pair of source/drain regions, a selectively-conductive channel, and a gate electrode. The pair of source/drain regions is in the semiconductor substrate, and the source/drain regions are laterally spaced. The selectively-conductive channel is in the semiconductor substrate, and extends laterally in a first direction, from one of the source/drain regions to another one of the source/drain regions. The gate electrode comprises a pair of peripheral segments and a central segment. The peripheral segments extend laterally in parallel in the first direction. The central segment covers the selectively-conductive channel and extends laterally in a second direction transverse to the first direction, from one of the peripheral segments to another one of the peripheral segments. A method for manufacturing the CIS device is also provided.

Abstract: A method of fabricating a tunnel oxide layer for a semiconductor memory device, the method comprising: fabricating on a substrate a first oxide layer by a plasma oxidation process; and fabricating at least one further oxide layer by a furnace oxidation process, wherein during fabrication of the at least one further oxide layer, reactive gases penetrate the first oxide layer and react with the silicon substrate to form at least a first portion of the at least one further oxide layer beneath the first oxide layer.

Abstract: The present disclosure relates to a programmable device. The programmable device comprises a first vertical transistor; and a second vertical transistor coupled to the first vertical transistor via a shared terminal, wherein: a first gate dielectric of the first vertical transistor has a first thickness and a second gate dielectric of the second vertical transistor has a second thickness, the first thickness being greater than the second thickness, and the second gate dielectric breaks down based on an application of a gate voltage that is lower than a first breakdown voltage of the first gate dielectric and higher than a second breakdown voltage of the second gate dielectric.

Abstract: A semiconductor device includes a plurality of stacked structures spaced apart from each other on a substrate, wherein the plurality of stacked structures each comprise a plurality of gate layers and a plurality of channel layers, a plurality of arsenic implanted regions on portions of a surface of the substrate adjacent the plurality of stacked structures, and a plurality of epitaxial source/drain regions extending from the plurality of stacked structures, wherein the plurality of epitaxial source/drain regions are spaced apart from the plurality of arsenic implanted regions.

Abstract: Techniques for forming VFETs with differing gate lengths Lg on the same wafer using a gas cluster ion beam (GCIB) process to produce fins of differing heights are provided. In one aspect, a method of forming fins having different heights includes: patterning the fins having a uniform height in a substrate, the fins including at least one first fin and at least one second fin; forming an oxide at a base of the at least one second fin using a low-temperature directional oxidation process (e.g., GCIB oxidation); and removing the oxide from the base of the at least one second fin to reveal the at least one first fin having a height HI and the at least one second fin having a height H2, wherein H2>H1. VFETs and methods for forming VFETs having different fin heights using this process are also provided.

Abstract: A semiconductor structure, such as a strained FinFETs, includes a strain relief buffer (SRB) layer isolated and separated from a source and a drain by a spacer that may be simultaneously formed with a gate spacer upon the sidewalls of a gate structure. The spacer limits the source and drain from contacting the SRB layer thereby limiting source drain junction leakage. Further, the spacer limits source and drain punch through to the SRB layer underneath a channel. An etch may partially remove a SRB layer portion within a fin stack. The etch undercuts the source and drain forming a fin void without under cutting the channel. The spacer may be formed by depositing spacer material with the fin void.

Abstract: After forming a material stack including a gate dielectric, a work function metal and a cobalt gate electrode in a gate cavity formed by removing a sacrificial gate structure, the cobalt gate electrode is recessed by oxidizing the cobalt gate electrode to provide a cobalt oxide layer on a surface of the cobalt gate electrodes and removing the cobalt oxide layer from the surface of the cobalt gate electrodes by a chemical wet etch. The oxidation and oxide removal steps can be repeated until the cobalt gate electrode is recessed to any desired thickness. The work function metal can be recessed after the recessing of the cobalt gate electrode is completed or during the recessing of the cobalt gate electrode.

Abstract: In a method for manufacturing a semiconductor device, a substrate is provided. A hard mask and a mask layer are formed on a first region and a second region of the substrate. The substrate is recessed using the hard mask and the mask layer to form a fin structure in the first region and a raised structure in the second region. First isolation structures and second isolation structures are formed on lower portions of opposite sidewalls of the fin structure and opposite sidewalls of the raised structure. A first gate structure is formed on a portion of the fin structure, and a second gate structure is formed on a portion of the raised structure. A first source and a first drain are formed on opposite sides of the first gate structure, and a second source and a second drain are formed on opposite sides of the second gate structure.