Antireflection Coating Patents (Class 257/437)
  • Patent number: 11127875
    Abstract: The invention relates to a method for manufacturing at least one passivated planar photodiode 1, comprising the following steps: producing a semiconductor detection portion 10; depositing a dielectric passivation layer 20; producing a peripheral portion 21 made from a doped semiconductor material; diffusion-annealing the doping elements from the peripheral portion 21 into the semiconductor detection portion 10, forming a doped peripheral region 14; producing a doped upper region 11, surrounded by the doped peripheral region 14.
    Type: Grant
    Filed: November 19, 2019
    Date of Patent: September 21, 2021
    Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Abdelkader Aliane, Jean-Louis Ouvrier-Buffet, Luc Andre, Hacile Kaya
  • Patent number: 11118266
    Abstract: The present invention relates to a method for depositing a protection film of a light-emitting element, the method comprising the steps of: depositing a first protection layer on a light-emitting element of a substrate by means of the atomic layer deposition method; and depositing at least one additional protection layer on the first protection layer by means of the plasma-enhanced chemical vapor deposition method.
    Type: Grant
    Filed: November 13, 2018
    Date of Patent: September 14, 2021
    Assignee: TES CO., LTD
    Inventors: Hong-Jae Lee, Jong-Hwan Kim, Woo-Pil Shim, Woo-Jin Lee, Sung-Yean Yoon, Don-Hee Lee
  • Patent number: 11049934
    Abstract: One illustrative transistor device disclosed herein includes a nanowire matrix comprising a plurality of nanowire structures that are arranged in at least one substantially horizontally oriented row and at least two substantially vertically oriented columns, the at least two substantially vertically oriented columns being laterally spaced apart from one another in a gate width direction of the transistor device, each of the plurality of nanowire structures comprising an outer perimeter. This illustrative embodiment of the transistor device further includes a gate structure that is positioned around the outer perimeter of all of the nanowire structures in the matrix, and a gate cap positioned above the gate structure.
    Type: Grant
    Filed: September 18, 2019
    Date of Patent: June 29, 2021
    Assignee: GLOBALFOUNDRIES U.S. INC.
    Inventors: Ali Razavieh, Julien Frougier, Bradley Morgenfeld
  • Patent number: 10964835
    Abstract: A broad-spectral-bandwidth photodetector designed for use with all types of optical fibers used in different avionics networks and sensors and a process for fabricating such photodetectors. A Schottky barrier photodetector is provided that includes germanium, which has a broad spectral response to light in the ultraviolet to near-infrared range (220 to 1600 nm). The provision of a photodetector having a broad spectral response avoids the use of multiple different types of photodetectors and receivers in an avionics platform with different optical fiber networks and sensors.
    Type: Grant
    Filed: August 29, 2018
    Date of Patent: March 30, 2021
    Assignee: The Boeing Company
    Inventor: Eric Y. Chan
  • Patent number: 10916669
    Abstract: The technique introduced herein decouples the traditional relationship between bandwidth and responsivity, thereby providing a more flexible and wider photodetector design space. In certain examples of the technique introduced here, a photodetector device includes a first mirror, a second mirror, and a light absorption region positioned between the first and second reflective mirrors. For example, the first mirror can be a low-reflectivity mirror, and the second mirror can be a high-reflectivity mirror. The light absorption region is positioned to absorb incident light that is passed through the first mirror and reflected between the first and second mirrors. The first mirror can be configured to exhibit a reflectivity that causes an amount of light energy that escapes from the first mirror, after the light being reflected back by the second mirror, to be zero or near zero.
    Type: Grant
    Filed: July 3, 2019
    Date of Patent: February 9, 2021
    Assignee: ARTILUX, INC.
    Inventors: Shu-Lu Chen, Yun-Chung Na
  • Patent number: 10879287
    Abstract: The present technology relates to a solid-state imaging device capable of inhibiting peeling of a fixed charge film while inhibiting dark current, a method of manufacturing the same, and an electronic device. A solid-state imaging device provided with a semiconductor substrate in which a plurality of photodiodes is formed, a groove portion formed in a depth direction from a light incident side for forming an element separating unit between adjacent photoelectric conversion elements on the semiconductor substrate, a first fixed charge film formed so as to cover a surface of a planar portion on the light incident side of the semiconductor substrate, and a second fixed charge film formed so as to cover an inner wall surface of the groove portion formed on the semiconductor substrate is provided. The present technology is applicable to a backside illumination CMOS image sensor, for example.
    Type: Grant
    Filed: September 17, 2019
    Date of Patent: December 29, 2020
    Assignee: SONY CORPORATION
    Inventor: Tadayuki Dofuku
  • Patent number: 10804315
    Abstract: The present disclosure, in some embodiments, relates to method of forming an integrated chip. The method may be performed by forming an image sensing element within a substrate. A dry etching process is performed on the substrate to form a plurality of intermediate protrusions defined by the substrate. A wet etching process is performed on the plurality of intermediate protrusions to form a plurality of protrusions from the plurality of intermediate protrusions.
    Type: Grant
    Filed: November 25, 2019
    Date of Patent: October 13, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ching-Chung Su, Hung-Wen Hsu, Jiech-Fun Lu, Shih-Pei Chou
  • Patent number: 10777596
    Abstract: An imaging apparatus includes a substrate including a photoelectric conversion portion; and a silicon nitride layer arranged to cover at least a portion of the photoelectric conversion portion. The silicon nitride layer contains chlorine. An N/Si composition ratio in the silicon nitride layer is not less than 1.00 and is less than 1.33.
    Type: Grant
    Filed: September 21, 2018
    Date of Patent: September 15, 2020
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Katsunori Hirota, Keiichi Sasaki, Tsutomu Tange, Yoshiei Tanaka, Akira Ohtani
  • Patent number: 10754249
    Abstract: In a first aspect, methods are provided that comprise: (a) applying a curable composition on a substrate; (b) applying a hardmask composition above the curable composition; (c) applying a photoresist composition layer above the hard mask composition, wherein one or more of the compositions are removed in an ash-free process. In a second aspect, methods are provided that comprise (a) applying an organic composition on a substrate; (b) applying a photoresist composition layer above the organic composition, wherein the organic composition comprises a material that produce an alkaline-soluble group upon thermal and/or radiation treatment. Related compositions also are provided.
    Type: Grant
    Filed: June 23, 2017
    Date of Patent: August 25, 2020
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Anthony Zampini, Michael K. Gallagher, Owendi Ongayi
  • Patent number: 10651290
    Abstract: A method for fabricating semiconductor device includes the steps of first forming a gate structure on a substrate, forming a contact etch stop layer (CESL) on the gate structure, forming an interlayer dielectric (ILD) layer around the gate structure, performing a curing process so that an oxygen concentration of the CESL is different from the oxygen concentration of the ILD layer, and then performing a replacement metal gate process (RMG) process to transform the gate structure into a metal gate.
    Type: Grant
    Filed: January 3, 2019
    Date of Patent: May 12, 2020
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Te-Chang Hsu, Chun-Chia Chen, Yao-Jhan Wang
  • Patent number: 10529769
    Abstract: In various embodiments, image sensors and methods of making images sensors are disclosed. In an embodiment, an image sensor includes a first pixel region having a pixel electrode, an optically sensitive material of a first thickness, and a counterelectrode. The images sensor also includes a second pixel region comprising a pixel electrode, an optically sensitive material of a second thickness, and a counterelectrode. The first pixel region is configured to detect light in a first spectral band and the second pixel region is configured to detect light in a second spectral band. The first and second spectral bands include an overlapping spectral range. The second spectral band also includes a spectral range that is substantially undetectable by the first pixel region. Other image sensors and methods of making images sensors are also disclosed.
    Type: Grant
    Filed: April 15, 2018
    Date of Patent: January 7, 2020
    Assignee: INVISAGE TECHNOLOGIES, INC.
    Inventors: Jae Park, Emanuele Mandelli
  • Patent number: 10510799
    Abstract: The present disclosure, in some embodiments, relates to an image sensor integrated chip. The image sensor integrated chip includes a substrate and an image sensing element disposed within the substrate. The substrate has sidewalls defining a plurality of protrusions over the image sensing element. A first one of the plurality of protrusions including a first sidewall having a first segment. A line that extends along the first segment intersects a second sidewall of the first one of the plurality of protrusions that opposes the first sidewall.
    Type: Grant
    Filed: May 23, 2019
    Date of Patent: December 17, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ching-Chung Su, Hung-Wen Hsu, Jiech-Fun Lu, Shih-Pei Chou
  • Patent number: 10504941
    Abstract: The present invention provides an array substrate comprising a substrate, a metal conductive film layer, and an anti-reflective film layer located between the substrate and the metal conductive film layer, and a method for manufacturing the same, as well as a display device. The method comprises step S1: forming an anti-reflective film layer on a substrate by adjusting the reaction power and/or reactive gas flow during the formation of film by the chemical vapor deposition process; and step S2: forming a metal conductive film layer on the substrate finished in step S1. Through the preparation method of the array substrate, the anti-reflective film layer can have a sand-like granulation structure, such that light reflected from the metal conductive film layer can be blocked, thereby weakening or avoiding the light reflected from the surface of the metal conductive film layer, further improving the display effect of the array substrate.
    Type: Grant
    Filed: July 24, 2017
    Date of Patent: December 10, 2019
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., BEIJING BOE DISPLAY TECHNOLOGY CO., LTD.
    Inventors: Liangliang Li, Huibin Guo, Shoukun Wang, Yuchun Feng, Yao Liu
  • Patent number: 10475828
    Abstract: An image sensor device structure is provided. The image sensor device structure includes a substrate, and the substrate is doped with a first conductivity type. The image sensor device structure includes a light-sensing region formed in the substrate, and the light-sensing region is doped with a second conductivity type that is different from the first conductivity type. The image sensor device structure further includes a doping region extended into the light-sensing region, and the doping region is doped with the first conductivity type. The image sensor device structure also includes a plurality of color filters formed on the doping region.
    Type: Grant
    Filed: January 11, 2018
    Date of Patent: November 12, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yen-Ting Chiang, Chun-Yuan Chen, Hsiao-Hui Tseng, Yu-Jen Wang, Shyh-Fann Ting, Wei-Chuang Wu, Jen-Cheng Liu, Dun-Nian Yaung
  • Patent number: 10468445
    Abstract: This technology relates to an image sensor. The image sensor includes a substrate including a photoelectric transformation element, the substrate includes a first surface and a second surface faced to the first surface; first and second shielding layers overlapped to photoelectric transformation element and formed over the first and second surfaces, respectively; and a third shielding layer surrounding the photoelectric transformation element and contacted to the first and second shielding layers by penetrating the substrate.
    Type: Grant
    Filed: May 7, 2018
    Date of Patent: November 5, 2019
    Assignee: SK hynix Inc.
    Inventor: Yun-Hui Yang
  • Patent number: 10468437
    Abstract: A photodiode includes an absorption layer. A cap layer is disposed on a surface of the absorption layer. A pixel diffusion area within the cap layer extends beyond the surface of the absorption layer and into the absorption layer to receive a charge generated from photons therefrom. A mesa trench is defined through the cap layer surrounding the pixel diffusion area, wherein the mesa trench defines a floor at the surface of the absorption layer and opposed sidewalls extending away from the surface of the absorption layer. An implant is aligned with the mesa trench and extends from the floor of the mesa trench through the absorption layer surrounding a portion of the absorption layer proximate the pixel diffusion area.
    Type: Grant
    Filed: March 26, 2018
    Date of Patent: November 5, 2019
    Assignee: Sensors Unlimited, Inc.
    Inventors: Wei Huang, Wei Zhang, Joshua Lund, Namwoong Paik
  • Patent number: 10461050
    Abstract: An object of the present invention is to stabilize and strengthen the strength of a bonding part between a metal electrode on a semiconductor chip and metal wiring connected thereto using a simple structure. Provided is a semiconductor device including a metal layer 130 on a surface of a metal electrode 120 formed on a semiconductor chip 110, the metal layer 130 consisting of a metal or an alloy different from a constituent metal of the metal electrode 120, metal wiring 140 is connected to the metal layer 130 via a bonding part 150, wherein the constituent metal of the metal layer 130 is a metal or an alloy different from the constituent metal of the metal electrode 120, and the bonding part 150 has an alloy region harder than the metal wiring 140.
    Type: Grant
    Filed: October 19, 2017
    Date of Patent: October 29, 2019
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Hidekazu Tanisawa, Shinji Sato, Fumiki Kato, Hiroshi Sato, Kenichi Koui, Hiroki Takahashi, Yoshinori Murakami
  • Patent number: 10411051
    Abstract: A coplanar electrode photodiode array and a manufacturing method thereof are disclosed. On a top side of a low resistance rate substrate, a high resistance epitaxial silicon wafer, a first conductive type heavily doped region and a second conductive type doped region are formed, which are a cathode and an anode of a photodiode respectively. The structure includes a trench structure formed between the anode and the cathode, the trench structure may be form by a gap, an insulating material, a conductive structure, a reflective material, and ion implantation, and also includes a first conductive type heavily doped region, an insulating isolation layer or a conductive structure with an insulating layer, and the like formed under the anode and the cathode.
    Type: Grant
    Filed: August 31, 2016
    Date of Patent: September 10, 2019
    Assignee: Nuctech Company Limited
    Inventors: Lan Zhang, Yuanjing Li, Yinong Liu, Haifan Hu, Jun Li
  • Patent number: 10332916
    Abstract: A metal line includes a conductive layer containing aluminum (Al) or an aluminum alloy, a first capping layer on the conductive layer, the first capping layer containing titanium nitride (TiNx), and a second capping layer on the first capping layer, the second capping layer containing titanium (Ti).
    Type: Grant
    Filed: June 20, 2018
    Date of Patent: June 25, 2019
    Assignee: Samsung Display Co., Ltd.
    Inventors: Dong Min Lee, Sang Won Shin, Hyun Eok Shin
  • Patent number: 10224450
    Abstract: A semiconductor device, silicon photomultiplier, and sensor are described. The disclosed semiconductor device is disclosed to include a substrate, a photosensitive area provided on the substrate, the photosensitive area corresponding to an area in which an electrical signal is generated in response to light impacting the photosensitive area, at least one trench substantially surrounding the photosensitive area, the at least one trench extending at least partially into the substrate, and a resistor confined by the at least one trench and in electrical communication with the active area such that the resistor is configured to carry electrical signals generated by the photosensitive area to a metal contact.
    Type: Grant
    Filed: June 27, 2017
    Date of Patent: March 5, 2019
    Assignee: AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
    Inventors: Claudio Piemonte, Alberto Giacomo Gola, Giovanni Paternoster, Fabio Acerbi
  • Patent number: 10211314
    Abstract: A method for fabricating semiconductor device includes the steps of first forming a gate structure on a substrate, forming a contact etch stop layer (CESL) on the gate structure, forming an interlayer dielectric (ILD) layer around the gate structure, performing a curing process so that an oxygen concentration of the CESL is different from the oxygen concentration of the ILD layer, and then performing a replacement metal gate process (RMG) process to transform the gate structure into a metal gate.
    Type: Grant
    Filed: October 22, 2017
    Date of Patent: February 19, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Te-Chang Hsu, Chun-Chia Chen, Yao-Jhan Wang
  • Patent number: 10186346
    Abstract: A transparent conductive film 1 includes, in this order, a transparent substrate 2, a first optical adjustment layer 4, an inorganic layer 5, and a transparent conductive layer 6. The first optical adjustment layer 4 has refractive index nC lower than refractive index nA of the transparent substrate 2, and thickness TC of 10 nm or more and 35 nm or less. The inorganic layer 5 has refractive index nD that is lower than the absolute value |nCĂ—1.13| of a value obtained by multiplying the refractive index nC of the first optical adjustment layer 4 by 1.13.
    Type: Grant
    Filed: March 11, 2015
    Date of Patent: January 22, 2019
    Assignee: NITTO DENKO CORPORATION
    Inventors: Daiki Kato, Rie Kawakami, Nozomi Fujino, Tomotake Nashiki
  • Patent number: 10177189
    Abstract: A method of manufacturing a semiconductor structure includes receiving a substrate and an interlayer dielectric (ILD) over the substrate; bonding the substrate and the ILD over a carrier substrate; forming a recessed portion extended through the substrate and the ILD; disposing a conductive material into the recessed portion; and removing the carrier substrate, wherein the conductive material is in contact with the ILD and is separated from the substrate.
    Type: Grant
    Filed: July 13, 2017
    Date of Patent: January 8, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chia-Yu Wei, Chin-Hsun Hsiao, Yi-Hsing Chu, Yen-Liang Lin, Yung-Lung Hsu, Hsin-Chi Chen
  • Patent number: 10032950
    Abstract: An avalanche photodiode, and related method of manufacture and method of use thereof, that includes a first contact layer; a multiplication layer, wherein the multiplication layer includes AlInAsSb; a charge, wherein the charge layer includes AlInAsSb; an absorption, wherein the absorption layer includes AlInAsSb; a blocking layer; and a second contact layer.
    Type: Grant
    Filed: February 22, 2017
    Date of Patent: July 24, 2018
    Assignee: University of Virginia Patent Foundation
    Inventors: Joe C. Campbell, Min Ren, Madison Woodson, Yaojia Chen, Seth Bank, Scott Maddox
  • Patent number: 9978801
    Abstract: In various embodiments, image sensors and methods of making images sensors are disclosed. In an embodiment, an image sensor includes a first pixel region having a pixel electrode, an optically sensitive material of a first thickness, and a counterelectrode. The images sensor also includes a second pixel region comprising a pixel electrode, an optically sensitive material of a second thickness, and a counterelectrode. The first pixel region is configured to detect light in a first spectral band and the second pixel region is configured to detect light in a second spectral band. The first and second spectral bands include an overlapping spectral range. The second spectral band also includes a spectral range that is substantially undetectable by the first pixel region. Other image sensors and methods of making images sensors are also disclosed.
    Type: Grant
    Filed: July 24, 2015
    Date of Patent: May 22, 2018
    Assignee: INVISAGE TECHNOLOGIES, INC.
    Inventors: Jae Park, Emanuele Mandelli
  • Patent number: 9870938
    Abstract: A semiconductor element producing method is disclosed. In the method, a surface protective tape including a base layer and an adhesive layer (including an intermediate layer) is attached to the front surface of a wafer that has unevenness caused by a polyimide passivation. The wafer is placed on a stage, with the surface protective tape facing the stage. The surface protective tape is heated while being drawn to the stage to flatten the surface of the surface protective tape. A grinding process is performed on the rear surface of the wafer to reduce the thickness of the wafer. A rear surface element structure is formed on the rear surface of the wafer, and the wafer is diced into chips.
    Type: Grant
    Filed: October 9, 2014
    Date of Patent: January 16, 2018
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventor: Akira Tamenori
  • Patent number: 9836144
    Abstract: A touch panel according to the embodiment includes a substrate having a first surface and a second surface opposite to the first surface; an intermediate layer on the first surface of the substrate; and a transparent electrode on the intermediate layer. A touch panel according to another embodiment includes a substrate having a first surface and a second surface opposite to the first surface; a transparent electrode on the first surface of the substrate; and an anti-reflective layer on the transparent electrode.
    Type: Grant
    Filed: July 29, 2011
    Date of Patent: December 5, 2017
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Keun Sik Lee, Byung Soo Kim, Sun Hwa Lee, Chung Won Seo
  • Patent number: 9818747
    Abstract: A number of first hard mask portions are formed on a dielectric layer to vertically shadow a respective one of a number of underlying gate structures. A number of second hard mask filaments are formed adjacent to each side surface of each first hard mask portion. A width of each second hard mask filament is set to define an active area contact-to-gate structure spacing. A first passage is etched between facing exposed side surfaces of a given pair of neighboring second hard mask filaments and through a depth of the semiconductor wafer to an active area. A second passage is etched through a given first hard mask portion and through a depth of the semiconductor wafer to a top surface of the underlying gate structure. An electrically conductive material is deposited within both the first and second passages to respectively form an active area contact and a gate contact.
    Type: Grant
    Filed: March 8, 2016
    Date of Patent: November 14, 2017
    Assignee: Tela Innovations, Inc.
    Inventor: Michael C. Smayling
  • Patent number: 9773829
    Abstract: A method of image sensor fabrication includes providing a semiconductor material, an insulation layer, and a logic layer, where the semiconductor material includes a plurality of photodiodes. A through-semiconductor-via is formed which extends from the semiconductor material, through the insulation layer, and into the logic layer. The through-semiconductor-via is capped with a capping layer. A metal pad is disposed in a first trench in the semiconductor material. Insulating material is deposited on the capping layer, and in the first trench in the semiconductor material. A resist is deposited in a second trench in the insulating material, and the second trench in the insulating material is aligned with the metal pad. The insulating material is removed to expose the capping layer, and a portion of the capping layer disposed proximate to the plurality of photodiodes is also removed. A metal grid is formed proximate to the plurality of photodiodes.
    Type: Grant
    Filed: February 3, 2016
    Date of Patent: September 26, 2017
    Assignee: OmniVision Technologies, Inc.
    Inventors: Yuanwei Zheng, Gang Chen, Duli Mao, Dyson Tai
  • Patent number: 9748298
    Abstract: A backside illumination image sensor with an array of image sensor pixels is provided. Each pixel may include a photodiode, a storage diode, and associated circuitry formed in a front side of a semiconductor substrate. In accordance with an embodiment, a trench isolation structure may be formed directly over the storage diode but not over the photodiode from a back side of the substrate. The backside trench isolation structure may be filled with absorptive material and can optionally be biased to a ground or negative voltage level. A light shielding layer may also be formed over the backside trench isolation structure on the back side of the substrate. The light shielding layer may be formed from absorptive material or reflective material, and may also be biased to a ground or negative voltage level.
    Type: Grant
    Filed: June 30, 2015
    Date of Patent: August 29, 2017
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Victor Lenchenkov, Sergey Velichko
  • Patent number: 9717418
    Abstract: A micro-camera catheter device is disclosed having at least one light source disposed on a distal end of a catheter. The light source is capable of propagating a predetermined wavelength of light with a wavelength greater than approximately 700 nanometers onto a target. The device further includes a lens system disposed on the distal end of the catheter, said lens system configured to receive light reflected from the target. The device further includes a non-linear optical media disposed about the lens system configured to reduce the wavelength of light reflected from the target. The device also includes a silicon-based solid state imaging device disposed behind the non-linear optical media configured to receive light from the non-linear optical media.
    Type: Grant
    Filed: June 22, 2015
    Date of Patent: August 1, 2017
    Assignee: Sarcos LC
    Inventors: Stephen C. Jacobsen, David P. Marceau
  • Patent number: 9673239
    Abstract: A system and method for forming pixels in an image sensor is provided. In an embodiment, a semiconductor device includes an image sensor including a first pixel region and a second pixel region in a substrate, the first pixel region being adjacent to the second pixel region. A first anti-reflection coating is over the first pixel region, the first anti-reflection coating reducing reflection for a first wavelength range of incident light. A second anti-reflection coating is over the second pixel region, the second anti-reflection coating reducing reflection for a second wavelength range of incident light that is different from the first wavelength range.
    Type: Grant
    Filed: January 15, 2016
    Date of Patent: June 6, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yen-Chang Chu, Yeur-Luen Tu, Cheng-Yuan Tsai
  • Patent number: 9520435
    Abstract: An image sensor including a semiconductor layer; a stack of insulating layers resting on the back side of the semiconductor layer; a conductive layer portion extending along part of the height of the stack and flush with the exposed surface of the stack; laterally-insulated conductive fingers extending through the semiconductor layer from its front side and penetrating into said layer portion; laterally-insulated conductive walls separating pixel areas, these walls extending through the semiconductor layer from its front side and having a lower height than the fingers; and an interconnection structure resting on the front side of the semiconductor layer and including vias in contact with the fingers.
    Type: Grant
    Filed: August 31, 2015
    Date of Patent: December 13, 2016
    Assignees: STMicroelectronics SA, STMicroelectronics (Crolles 2) SAS
    Inventors: Nayera Ahmed, Michel Marty
  • Patent number: 9520432
    Abstract: Channel stop sections formed by multiple times of impurity ion implanting processes. Four-layer impurity regions are formed across the depth of a semiconductor substrate (across the depth of the bulk), so that a P-type impurity region is formed deep in the semiconductor substrate; thus, incorrect movement of electric charges is prevented. Other four-layer impurity regions of another channel stop section are decreased in width step by step across the depth of the substrate, so that the reduction of a charge storage region of a light receiving section due to the dispersion of P-type impurity in the channel stop section is prevented in the depth of the substrate.
    Type: Grant
    Filed: August 27, 2015
    Date of Patent: December 13, 2016
    Assignee: Sony Corporation
    Inventor: Kiyoshi Hirata
  • Patent number: 9508774
    Abstract: There are provided a highly reliable semiconductor device capable of suppressing occurrence of cracks as well as securing flatness and a manufacturing method therefor. The semiconductor device includes: a semiconductor substrate; an element region; and a non-element region. The non-element region includes: a top-layer metal wiring in a top layer of metal wirings formed in the non-element region; a flattening film covering an upper surface of the top-layer metal wiring; and a protecting film formed over the flattening film. A removed part where the protecting film is removed is formed in at least part of the non-element region.
    Type: Grant
    Filed: November 18, 2013
    Date of Patent: November 29, 2016
    Assignee: Renesas Electronics Corporation
    Inventor: Koji Iizuka
  • Patent number: 9490289
    Abstract: An image sensing device includes a plurality of photoelectric conversion portions. The device further includes a semiconductor substrate having a first surface for receiving incident light and a second surface on an opposite side to the first surface, the photoelectric conversion portions being provided therein, a first non-metal region arranged on a second surface side and arranged at a position at least partially overlapping with the photoelectric conversion portions, a second non-metal region arranged to be in contact with a side surface of the first non-metal region, and a reflection layer arranged on an opposite side of the first non-metal region to the semiconductor substrate. A refractive index of the first non-metal region is higher than a refractive index of the second non-metal region.
    Type: Grant
    Filed: October 4, 2013
    Date of Patent: November 8, 2016
    Assignee: Canon Kabushiki Kaisha
    Inventor: Takehiko Soda
  • Patent number: 9437700
    Abstract: A semiconductor device is provided with a silicon layer, an upper surface side aluminum layer containing silicon and an insulation film. The upper surface side aluminum layer contacts and is layered on a part of a surface of the silicon layer. The insulation film contacts and is layered on another part of the surface of the silicon layer. The insulation film is adjacent to and contacts the upper surface side aluminum layer. The insulation film includes an insulation film body and a plurality of first nodule segregated portions projecting from the insulation film body toward the upper surface side aluminum layer as seen along a vertical direction relative to the surface of the silicon layer. A corner is formed by a side surface of the insulation film body and a side surface of each of the first nodule segregated portions as seen along the vertical direction.
    Type: Grant
    Filed: March 6, 2015
    Date of Patent: September 6, 2016
    Assignees: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO, TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Satoru Machida, Yusuke Yamashita, Koichi Nishikawa, Masaru Senoo, Jun Okawara, Yoshifumi Yasuda, Hiroshi Hosokawa, Yasuhiro Hirabayashi
  • Patent number: 9406830
    Abstract: A semiconductor light-receiving device includes: a substrate; a p-type conductive layer, a light absorption layer having a smaller bandgap than that of incident light, a multiplication layer producing avalanche multiplication, and an n-type window layer laminated in that order on the substrate; an n-type conductive layer in a region of part of the n-type window layer; and a first p-type conductive region in a region of the n-type window layer that is not in contact with the n-type conductive layer, wherein the first p-type conductive region does not reach the multiplication layer and is not in contact with any electrode to which power is supplied from outside.
    Type: Grant
    Filed: October 30, 2015
    Date of Patent: August 2, 2016
    Assignee: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Ryota Takemura, Masaharu Nakaji, Kazuki Yamaji
  • Patent number: 9385156
    Abstract: Some embodiments of the present disclosure provide a method of manufacturing a back side illuminated (BSI) image sensor. The method includes receiving a semiconductive substrate; forming a transistor coupled to a photosensitive element at a front side of the semiconductive substrate; forming a deep trench isolation (DTI) at a back side of the semiconductive substrate; forming a doped layer conformally over the DTI; performing a microwave anneal over the back side; forming a non-transparent material inside the DTI; and forming a color filter over the doped layer.
    Type: Grant
    Filed: November 26, 2014
    Date of Patent: July 5, 2016
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Tsung-Han Tsai, Yun-Wei Cheng, Kuo-Cheng Lee, Chun-Hao Chou, Yung-Lung Hsu
  • Patent number: 9331110
    Abstract: A semiconductor device includes a gate electrode formed on a substrate with a gate insulating layer in between, an insulating layer of property and thickness that allow for a silicide block formed in a first region of the substrate so as to cover the gate electrode, a sidewall formed to at least partly include the insulating layer at a side of the gate electrode, a first impurity region formed by implantation of a first impurity in a peripheral region of the gate electrode formed in the first region of the substrate before the insulating layer is formed, a second impurity region formed by implantation of a second impurity in a peripheral region of the sidewall of the gate electrode formed in a second region of the substrate after the sidewall is formed, and a silicide layer formed on a surface of the second impurity region of the substrate.
    Type: Grant
    Filed: December 15, 2010
    Date of Patent: May 3, 2016
    Assignee: SONY CORPORATION
    Inventor: Keiji Tatani
  • Patent number: 9281347
    Abstract: A display device integrated with a touch screen panel may include a display device and an anti-reflection layer. The display device may include a plurality pixels arranged therein. The anti-reflection layer may include a plurality of metal layers and a plurality of dielectric layers that are sequentially laminated on an upper surface of the display device. In the display device, one or more metal layers among the plurality of metal layers constituting the anti-reflection layer may be operated as sensing electrodes of the touch screen panel.
    Type: Grant
    Filed: October 22, 2014
    Date of Patent: March 8, 2016
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Chung-Sock Choi, Jin-Koo Kang, Soo-Youn Kim, Seung-Hun Kim, Hyun-Ho Kim, Seung-Yong Song, Cheol Jang, Sang-Hwan Cho, Sang-Hyun Park
  • Patent number: 9159855
    Abstract: Channel stop sections formed by multiple times of impurity ion implanting processes. Four-layer impurity regions are formed across the depth of a semiconductor substrate (across the depth of the bulk), so that a P-type impurity region is formed deep in the semiconductor substrate; thus, incorrect movement of electric charges is prevented. Other four-layer impurity regions of another channel stop section are decreased in width step by step across the depth of the substrate, so that the reduction of a charge storage region of a light receiving section due to the dispersion of P-type impurity in the channel stop section is prevented in the depth of the substrate.
    Type: Grant
    Filed: June 19, 2014
    Date of Patent: October 13, 2015
    Assignee: SONY CORPORATION
    Inventor: Kiyoshi Hirata
  • Patent number: 9142578
    Abstract: Provided is a semiconductor integrated circuit device having pixel regions in a photodiode array region and having, in each of the pixel regions, a waveguide holding hole having a substantially perpendicular sidewall above the photodiode and embedded with a silicon oxide-based sidewall insulating film reaching the bottom surface of the hole and two or more silicon nitride-based insulating films having a higher refractive index on the inner side of the hole. This structure makes it possible to prevent deterioration of pixel characteristics of an imaging device, such as CMOS sensor, which is rapidly decreasing in size.
    Type: Grant
    Filed: June 15, 2014
    Date of Patent: September 22, 2015
    Assignee: Renesas Electronics Corporation
    Inventors: Kazuo Tomita, Takeshi Kawamura
  • Patent number: 9088008
    Abstract: Provided is a display panel device including a pixel unit including a luminescent layer, and a lens that covers a luminescent region of the luminescent layer placed above the pixel unit and that transmits light emitted from the luminescent layer. The height between a luminescent face of the luminescent region and an apex of the lens is uniform along the straight line in the long axis direction of the luminescent region. Furthermore, at both end parts of the lens, a cross-section of the light emitting side corresponding to the long axis direction of the luminescent region has a shape of an elliptic arc having a predetermined curvature.
    Type: Grant
    Filed: March 26, 2012
    Date of Patent: July 21, 2015
    Assignee: JOLED INC.
    Inventors: Masahiro Kasano, Takashi Ohta
  • Patent number: 9087952
    Abstract: A method of forming an integrated photonic semiconductor structure having a photonic device and a CMOS device may include depositing a first silicon nitride layer having a first stress property over the photonic device, depositing an oxide layer having a stress property over the deposited first silicon nitride layer, and depositing a second silicon nitride layer having a second stress property over the oxide layer. The deposited first silicon nitride layer, the oxide layer, and the second silicon nitride layer encapsulate the photonic device.
    Type: Grant
    Filed: April 7, 2014
    Date of Patent: July 21, 2015
    Assignee: International Business Machines Corporation
    Inventors: Solomon Assefa, Tymon Barwicz, Swetha Kamlapurkar, Marwan H. Khater, Steven M. Shank, Yurii A. Vlasov
  • Patent number: 9082915
    Abstract: Described herein is a low-voltage unidirectional bypass element connected across a solar cell and operable to allow current to flow when the operation of the solar cell is suspended. The bypass element includes a single field effect transistor connected between first and second terminals as a switch, and a detection circuit for detecting suspension of the solar cell's operation and activating the switch to bypass the solar cell in the event of its operation suspension. Diodes are connected in parallel with the normally-open switch and receive current, when the solar cell's operation is suspended, to trigger operation of the detection circuit. The detection circuit includes a charge pump, a timer circuit, a control generation unit and a switch control circuit. The switch control circuit generates a control signal to close the switch and to allow current to bypass the solar cell.
    Type: Grant
    Filed: April 10, 2013
    Date of Patent: July 14, 2015
    Assignees: IMEC, Universiteit Gent
    Inventors: Jan Doutreloigne, Pieter Bauwens
  • Patent number: 9024369
    Abstract: A backside illumination image sensor structure comprises an image sensor formed adjacent to a first side of a semiconductor substrate, wherein an interconnect layer is formed over the first side of the semiconductor substrate, a backside illumination film formed over a second side of the semiconductor substrate, a metal shielding layer formed over the backside illumination film and a via embedded in the backside illumination film and coupled between the metal shielding layer and the semiconductor substrate.
    Type: Grant
    Filed: December 18, 2012
    Date of Patent: May 5, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shiu-Ko JangJian, Chi-Cherng Jeng, Volume Chien, Ying-Lang Wang
  • Patent number: 8987854
    Abstract: A microelectronic device is provided, including: a substrate including a first semiconductor layer positioned on a dielectric layer and a second semiconductor layer; and an isolation trench disposed through the first semiconductor layer, the dielectric layer, and a part of the thickness of the second semiconductor layer, including a dielectric material and delimiting, in the first semiconductor layer, a roughly rectangular active area of the device, wherein in said part of the thickness of the second semiconductor layer, at least one portion of the dielectric material is positioned under the active area delimited by at least four side walls of the trench, and two of the at least four side walls are roughly parallel with one another and are positioned under the active area, and the other two of the at least four side walls are orthogonal to said two walls and are not positioned under the active area.
    Type: Grant
    Filed: September 4, 2013
    Date of Patent: March 24, 2015
    Assignee: Commissariat a l 'energie atomique et aux energies alternatives
    Inventors: Maud Vinet, Laurent Grenouillet, Yannick Le Tiec, Romain Wacquez
  • Patent number: 8981510
    Abstract: Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor includes first and second radiation-detection devices that are disposed in the substrate. The first and second radiation-detection devices are operable to detect radiation waves that enter the substrate through the back side. The image sensor also includes an anti-reflective coating (ARC) layer. The ARC layer is disposed over the back side of the substrate. The ARC layer has first and second ridges that are disposed over the first and second radiation-detection devices, respectively. The first and second ridges each have a first refractive index value. The first and second ridges are separated by a substance having a second refractive index value that is less than the first refractive index value.
    Type: Grant
    Filed: June 4, 2010
    Date of Patent: March 17, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Chieh Chuang, Dun-Nian Yaung, Jen-Cheng Liu, Keng-Yu Chou, Wen-De Wang, Pao-Tung Chen
  • Patent number: 8963064
    Abstract: A photosensor array includes plural photosensor pixels. Each of the photosensor pixels includes a lower electrode, an amorphous silicon film, an n-type amorphous silicon film, and an upper electrode. The photosensor array includes plural scanning lines connected to the upper electrodes, plural read lines connected to the lower electrodes, a scanning circuit that is connected to the plural scanning lines, and sequentially supplies a selection scanning signal of a first voltage to the respective scanning lines, a first unit that inputs a second voltage higher than the first voltage to the plural read lines in a blanking period of one horizontal scanning period, and thereafter puts the plural read lines into the floating state, and a second unit that outputs a voltage change in each of the read lines within one horizontal scanning period as the sensor output voltage of the photosensor pixel.
    Type: Grant
    Filed: September 22, 2011
    Date of Patent: February 24, 2015
    Assignees: Japan Display Inc., Panasonic Liquid Crystal Display Co., Ltd.
    Inventors: Takeshi Yonekura, Toshio Miyazawa, Atsushi Hasegawa, Terunori Saitou, Kozo Yasuda