Abstract: A method for forming an anti-reflective-coating(ARC) layer is described. This ARC layer performs not only in its capacity to reduce reflections from its subjacent metal layer during the metal patterning photoresist exposure, but also serves as an effective etch inhibitor during subsequent via etching. Of particular importance is the ability provided by this ARC layer to sustain its etch resistance during considerable over etching such as is required when vias of different depths are to be opened. The ARC layer differs from the conventional titanium nitride ARC layer in that it has a base layer of titanium below the titanium nitride portion. It is this titanium layer and an optional intermediate Ti rich layer that sustains the over etch. Additionally, the titanium forms an improved bonding with the metal beneath providing reduced via contact resistance and greater via stability and consistency.

Abstract: In a photo-lithographic step for providing contact points to lower layers of a semiconductor device, an anti-reflective coating (ARC) layer, such as FLARE 2.0.TM., is used to provide a good contact points to an underlayer. After the contact points are made, the anti-reflective coating layer is removed, with the removal being performed in a same step in which a photo-resist is removed from the semiconductor device. In an alternative configuration, the ARC layer remains in the semiconductor device after the fabrication process is competed, thereby acting as an interlayer dielectric during operation of the semiconductor device.

Abstract: An anti-reflective composition used in manufacturing integrated circuit devices comprises a silicon-added germanium nitride material. The composition is present in a solid solution.

Abstract: A memory gate stack in a high density memory core has spaces on the order of less than 0.25 microns using conventional deep ultraviolet (DUV) lithography techniques by depositing a layer of silicon oxynitride over a plurality of layers, and a thin resist layer overlying on the silicon oxynitride layer. The resist layer has a thickness sufficient to withstand removal during etching of the silicon oxynitride layer, for example about 3,000 Angstroms to about 4,000 Angstroms. The silicon oxynitride layer has a sacrificial portion having a thickness at least about 500 Angstroms, and a stop-layer thickness, used for spacer formation following etching of the memory gate, of at least 1,000 Angstroms. The use of silicon oxynitride as an antireflective coating layer in combination with the thin resist optimizes the resolution of DUV lithography, enabling formation of spacers having widths less than about 0.24 microns.

Abstract: A color active pixel sensor cell is formed by utilizing four photodiodes which are each covered with a layer of oxide. The thicknesses of the layers of oxide are set so that a first layer of oxide prohibits red light from entering the first photodiode, a second layer of oxide prohibits green light from entering the second photodiode, a third layer of oxide prohibits blue light from entering the third photodiode, and a fourth layer of oxide allows visible light to enter the fourth photodiode. The amount of red light received by the cell is then determined by subtracting the light energy collected by the first photodiode from the light energy collected by the fourth photodiode. Similarly, the amount of green and blue light received by the cell is determined by subtracting the light energy collected by the second and third photodiodes, respectively, from the amount of light energy collected by the fourth photodiode.

Abstract: In one embodiment, delamination of a patterned silicon nitride anti-reflective layer (26) from an underlying patterned tungsten silicide layer (32), is prevented by forming a thin silicon layer (30) between the patterned tungsten silicide layer (32) and the overlying patterned silicon nitride anti-reflective layer (26).

Abstract: The application of a dissimilar anti-reflective coating on a conductive layer during photolithographic processing is avoided, as by modifying a portion of the upper surface of the conductive layer to exhibit anti-reflective properties. In an embodiment of the present invention, impurity ions are implanted into a portion of the upper surface of an aluminum or an aluminum-alloy conductive layer to render the upper portion substantially amorphous and, hence, decrease its reflectivity to perform an anti-reflective function.

Abstract: The present invention provides methods of producing an anti-reflective layer on a semiconductor wafer/device and wafers/devices including that anti-reflective layer. The anti-reflective layer is produced by annealing layers of titanium and aluminum on a wafer/device to provide a roughened surface that significantly reduces reflectivity to improve the accuracy and definition provided by optical lithography processes.

Abstract: A semiconductor device in which dry etching properties are rendered compatible with satisfactory anti-reflection characteristics in far-infrared lithography the semiconductor device has a semiconductor substrate and an electrode and wire pattern on the substrate. The semiconductor device also has an anti-reflective layer on the substrate which presents a variation in the composition of a constituent element along the film thickness over the semiconductor substrate. The anti-reflective layer is selected from the group consisting of SiO.sub.x, SiN.sub.x and Si.sub.x O.sub.y N.sub.z.

Abstract: A stress relaxation layer is inserted between an electrode layer and an antireflection layer to relax a stress imparted from one of the electrode and antireflection layers to the other. A semiconductor device is provided which can suppress separation of the antireflection film during device fabrication processes and dispense with the process of etching and removing the antireflection film.

Abstract: A compact and cost-effective wavelength meter and photodetector (10) that can measure simultaneously both wavelength and intensity has two back-to-back photodiodes (12 and 14) with a wavelength dependent distributed Bragg reflector (DBR) (28) positioned in-between. The wavelength resolution of this device is 1 nm or less. Easy design and fabrication of the device provides for reliable and cost-effective manufacturing. Applications include instrumentation and wavelength-division-multiplexing (WDM) in optical communication systems.

Abstract: A photodiode having an antireflection coating for use in optical measuring devices has its antireflection coating so selected that it provides in a predetermined wavelength range an approximately constant conversion factor. The conversion of the fight power to an electrical signal is thus substantially independent of wavelength over this wavelength range.

Abstract: The present invention provides for an improved package for a laser diode. The package has portions of its inner surfaces covered with a non-reflecting material, such as simple black paint, non-reflective metals or specific anti-reflection coatings. Such non-reflecting materials surprisingly enhances the performance of packaged laser diodes used as pumping lasers for fiber amplifiers, for example.

Abstract: A photoelectric transducer is provided which comprises a first electrode, a second electrode constituted of an antireflection layer, and a semiconductor layer between the first electrode and the second electrode. The antireflection layer comprises a laminated member of a first tin oxide layer containing a first crystalline oxide of grain size of not larger than 20 nm, and a second thin oxide layer containing a second oxide of a second thin oxide layer containing a second crystalline oxide of grain size of not larger than 20 nm.

Abstract: A semiconductor optical device having a small difference in level between first and second electrodes includes, at a first electrode, a junction of a p-type contact and an electron trapping semi-insulating semiconductor region in an n-type semiconductor substrate which is rectifying. At the second electrode, a diode includes a p-type window region, a light absorption region, and the n-type semiconductor substrate. When light enters this diode, a photocurrent is generated. When a bias voltage is applied to the diode in a reverse direction, the photocurrent flows between the electrodes.

Abstract: A multi-band spectroscopic photodetector array including a substrate having a buried insulator layer in the substrate for electrically isolating a lower section of the substrate located below the insulator layer form an upper section of the substrate located above the insulator layer; and a plurality of photodetection elements each formed on a different portion of the upper layer and each including elements for detecting photons in a selected wavelength range; wherein each of the different portions of the upper section has a different thickness and wherein the thickness at least in part determines the selected wavelength of the photons detected by each of the detection elements.

Abstract: The light receiving or back-side surface (22) of an indium antimonide (InSb) photodetector device (10) substrate (12) is cleaned to remove all native oxides of indium and antimony therefrom. A passivation layer (26) is then formed on the surface (22) of a material such as silicon dioxide, silicon suboxide and/or silicon nitride which does not react with InSb to form a structure which would have carrier traps therein and cause flashing. The device (10) is capable of detecting radiation over a continuous spectral range including the infrared, visible and ultraviolet regions.

Abstract: This is a system and method of forming an electrical contact to the optical coating of an infrared detector using conductive epoxy. The method may comprise: forming thermal isolation trenches 22 and bias contact vias 23 in a substrate 20; depositing a trench filler 24 in the thermal isolation trenches 22; depositing conductive epoxy 50 into the bias contact vias 23; replanarizing; depositing a common electrode layer 31 over the thermal isolation trenches 22 and vias 23; depositing an optical coating 26 above the common electrode layer 31; mechanically polishing a backside of the substrate 20 to expose the trench filler 24 and conductive epoxy 50; depositing a contact metal 34 on the backside of the substrate 20; etching the contact metal 34 and the trench filler 24 to form pixel mesas of the contact metal 34 and the substrate 20.

Abstract: A semiconductor device in which patterning is effected using a silicon oxynitride (SiON) based thin film as an anti-reflection film and in which electrical properties are prohibited from being deteriorated by hydrogen contained in the SiON based thin film. The semiconductor device has a substrate, a gate insulating film formed on the surface of the substrate, a gate electrode formed on the gate insulating film, and a first antireflection film having a pattern in common with the gate electrode. The semiconductor device also has a hydrogen permeation prohibiting film formed between the gate insulating film and the first antireflection film. The first antireflection film contains hydrogen and is formed on the gate electrode.

Abstract: An object of the present invention is to enhance the transmission efficiency of light signals. An output end of a light guide is coupled to a light receiving portion of a semiconductor substrate with an optical coupling agent. Reflection preventing films of silicon dioxide are formed on both the output end and the input end of the light guide. Similar reflection preventing films are formed on both surfaces of a light introducing window provided at the input end of the light guide, too. The light introducing window is provided to maintain the inside of the device airtight while enabling passage of light signals. Since the reflection preventing films are formed, the transmission efficiency of light signals is high, so that the sensitivity of the device increases.

Abstract: Si-based photodetectors according to the invention can have high speed (e.g.,.gtoreq.1 Gb/s) and high efficiency (e.g.,>20%). The detectors include a relatively thin (e.g.,<0.5.alpha..sup.-1, where .alpha..sup.-1 is the absorption length in Si of the relevant radiation) crystalline Si layer on a dielectric (typically SiO.sub.2) layer, with appropriate contacts on the Si layer. Significantly, the surface of the Si layer is textured such that the radiation that is incident on the surface and transmitted into the Si layer has substantially random direction. The randomization of the propagation direction results in substantial trapping of the radiation in the Si layer, with attendant increased effective propagation length in the Si. Detectors according to the invention advantageously are integrated with the associated circuitry on a Si chip, typically forming an array of detectors.

Abstract: Reflective notching of a photoresist pattern (20), generated over reflective materials on a semiconductor substrate (12), is minimized by using an anti-reflective layer (20) of silicon-rich silicon nitride. The layer of silicon-rich silicon nitride is formed over the reflective materials and a layer of photoresist is then formed over the silicon-rich silicon nitride. The photoresist layer is then photolithographically patterned to form an integrated circuit pattern (20). The silicon-rich silicon nitride layer has an absorptive index of greater than 0.25, which allows it to be used as an anti-reflective layer with photolithographic patterning systems having ultraviolet and deep ultraviolet exposure wavelengths.

Abstract: A solid-state image sensing device, such as a charge-coupled image sensor, has a plurality of sensor regions arranged in two-dimensions with vertical transfer lines associated with respective vertical rows of the sensor regions for transfer of signal charges read from the sensor regions. Each vertical transfer line comprises a charge transfer region for transferring the signal charges read from the sensor regions. A gate electrode is formed on an insulating layer over the signal charge transfer regions, a light shielding layer is formed on an interlayer insulating layer over the gate electrode, and a buffer film containing hydrogen underlies the light shielding layer. The buffer layer, such as a buffer layer containing hydrogen, prevents damage attributable to film forming processes and the diffusion of impurities from the light shielding layer, and supplies hydrogen into the interface between the substrate and an oxide film to improve the condition of the interface. Thus, dark current can be reduced.

Abstract: A detector circuit, for example for optical radiation, has a detector diode (20) and an amplifier circuit (30) integrated with the diode in the same silicon wafer for amplification of the diode signal. The diode is designed as a lateral diode. The diode and the amplifier circuit are both produced in a homogeneously weakly doped silicon wafer (1).

Abstract: A semiconductor device and method of manufacturing the same includes the steps of forming silicon nitride films including much silicon than a stoichiometric silicon nitride (Si.sub.3 N.sub.4) and which will be an anti-reflection film, forming a resist film on the plasma silicon nitride films and, and concurrently patterning plasma silicon nitride films and conductive layers and using the resist film as a mask. As a result, high integration of the semiconductor device can be attained.

Abstract: In a semiconductor device according to this invention, a first insulating film formed on only a pattern formation conductive film on a semiconductor substrate and having a reflectance which is 25% or more and periodically changes in accordance with a change in film thickness of the first insulating film is formed on the semiconductor substrate. A second insulating film having a reflectance which is 25% or more and periodically changes in accordance with a change in film thickness and having a refractive index different from that of the first insulating film is formed on only the first insulating film. A total reflectance of the first and second insulating films is less than 25%. A photosensitive film is formed on the second insulating film and exposed through a reticle to form a predetermined pattern. Etching is performed using the photosensitive film having this pattern to form a conductive pattern.

Abstract: An optical semiconductor device including one of a light responsive semiconductor element, a light emitting semiconductor element, and a light responsive and light emitting semiconductor element, and a package hermetically sealing the semiconductor element. The package includes a window of silicon that selectively transmits light incident on the semiconductor element and emitted from the semiconductor element. The Si window is connected to the package body using a solder that makes a eutectic alloy with silicon. In this structure, since the eutectic alloy is produced at the junction of the Si window and the package body, the junction is not adversely affected by external influences, especially temperature. Further, since the Si window does not transmit light in the visible light region, the inside of the package cannot be seen from the outside through the Si window after fabrication of the device.

Abstract: A first transparent protection layer is formed on color filters, and micro lenses are further formed on the first transparent protection layer. Then unevenness due to the micro lenses is flattened by a first transparent resin layer which has water repellency and oil repellency (low surface energy), a high transmittance in visible light range, a high flattening capability in a coating process, and a refractive index lower than the refractive index of the micro lenses. With the above-mentioned arrangement, dust or the like can be difficult to contaminate the surface of the solid state image sensor without loosing the light converging effect of the micro lenses. Even when dust or the like attaches to the surface, it can be easily removed with a cotton swab or the like.

Abstract: A light-receiving semiconductor device with improved light sensitivity. On a semiconductor substrate of a first conductivity type is formed a plurality of buried layers of a second conductivity type divided by a narrow dividing region. A surface semiconductor layer of the first conductivity type covers the buried layers and the substrate. A connecting semiconductor region of the second conductivity type extends from each of the plurality of the buried layers to the surface of the surface semiconductor layer. An anti-light-reflecting film formed on the surface of the surface semiconductor layer covers a region above the dividing region as well as above the plurality of buried layers. Each of the plurality of buried layers forms a light responsive element with the substrate.

Abstract: The light receiving or back-side surface (22) of an indium antimonide (InSb) photodetector device (10) substrate (12) is cleaned to remove all oxides of indium and antimony therefrom. Passivation and/or partially visible light blocking layers (26, 28) are then formed thereon of a material which does not react with InSb to form a structure which would have carrier traps therein and cause flashing. The optical cutoff wavelength and thickness of the partially visible light blocking layer (28) are selected to suppress the avalanche effect in the device (10) at visible wavelengths. This enables the device (10) to operate effectively over a wide wavelength range including the visible and infrared bands. The passivation and/or partially visible light blocking layers (26, 28) may be a thin layer of a semiconductor such as germanium, or silicon dioxide and/or silicon nitride followed by a partially visible light blocking silicon layer.

Abstract: A semiconductor device is provided that includes an optical cavity that is designed to provide a prescribed resonant optical wavelength. The optical cavity includes a mirror structure deposited on top of a substrate and a multi-layer region such as an electroabsorptive region, for example, deposited over the mirror structure. A partial antireflective coating is deposited over the multi-layer region. The mirror structure and the multilayer region have a thickness variation sufficient to yield a resonant optical wavelength that deviates from the prescribed resonant wavelength. The partial antireflective coating has a non-uniform thickness variation that causes the resonant optical wavelength to shift substantially toward the prescribed resonant optical wavelength.

Abstract: An asymmetric Fabry-Perot modulator comprises a multiple quantum well (MQW) p-i-n diode (8, 10, 12) defined by a front surface of reflectivity 0.3 and back surface of reflectivity 0.95. The cavity length L is such that resonance occurs close to the long wavelength side of the unbiased MQW absorption edge so that application of a bias signal to the MQW (12) causes the reflectivity of the cavity to become close to zero. This arrangement provides a high contrast modulator less sensitive to temperature variations and deviations from ideal reflectivities of the front and back surfaces than high-finesse Fabry-Perot modulators.

Abstract: A clear-mold solid-state imaging device using a charge coupled device, in which a solid-state imaging device is molded with a transparent resin. The solid-state imaging device includes a surface having a light receiving section; a light shielding film provided over the surface; a transparent passivation film for protecting the light shielding film; and a moving ion blocking layer provided between the transparent passivation film and the transparent resin.

Abstract: A high-efficiency single heterojunction solar cell wherein a thin emitter layer (preferably Ga.sub.0.52 In.sub.0.48 P) forms a heterojunction with a GaAs absorber layer. The conversion effiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the emitter layer.

Abstract: In a solid-state image pickup device, a high melting point metal film is used in a cell portion region (photoelectric conversion portion) as a light shielding film which defines an open area of a photoelectric conversion element and an aluminum film which is covered with a high melting point metal is used in a peripheral region as wiring.

Abstract: A resonant infrared detector includes an infrared-active layer which has first and second parallel faces and which absorbs radiation of a given wavelength. The detector also includes a first tuned reflective layer, disposed opposite the first face of the infrared-active layer, which layer reflects a specific portion of the radiation incident thereon and allows a specific portion of the incident radiation at the given wavelength to reach the infrared-active layer. A second reflective layer, disposed opposite the second face of the infrared-active layer, reflects back into the infrared-active layer substantially all of the radiation at the given wavelength which passes through the infrared-active layer. The reflective layers have the effect of increasing the quantum efficiency of the infrared detector relative to the quantum efficiency of the infrared-active layer alone.

Abstract: A photosensitive semi-conductor device is disclosed having a matrix of non-translucent dots on its photosensitive surface. In an array of photosensitive semi-conductor devices, such as photodiodes, the non-translucent dot pattern applied to this photosensitive surface of each photodiode is used to regulate the output from each photodiode. The dot matrix is preferably sputtered onto the anti-reflection coating of the photosensitive surface of the photodiode.

Abstract: A four-layer, wideband anti-reflection coating (30) is formed on a light-receiving surface (22) of an indium antimonide (InSb) photodetector (10) to enable detection of light at visible as well as infrared wavelengths. The layers (30a,30b,30c,30d) each have an optical thickness of approximately one-quarter wavelength at a reference wavelength of 1.6 microns. The refractive indices of the layers (30a,30b,30c,30d) are stepped down from the surface (22), having values of approximately 3.2/2.6/1.9/1.45 respectively. The second layer (30b) is preferably formed of silicon suboxide (SiO.sub.0<X<1) by electron-beam deposition of silicon in an oxygen backfill to obtain a refractive index between the indices of silicon and silicon monoxide. A thin passivation layer (26) of germanium or silicon nitride is formed on the surface (22) under the anti-reflection coating (30) to inhibit a flashing effect at infrared wavelengths after exposing to the ultraviolet (UV) and/or visible light.

Abstract: A solid-state color imaging device comprises a semiconductor substrate having a plurality of optoelectrical conversion regions on a major surface of the substrate and an insulating layer on the major surface of the substrate. On the insulating layer is a light shielding layer having an array of holes respectively aligned with the optoelectrical conversion regions. On the light shielding layer is an anti-reflection layer to absorb light reflected from the light shielding layer. A color anti-blending layer and a color dyeing layer are successively formed on the anti-reflection layer. The color dyeing layer has an array of color filtering regions in positions which correspond respectively to the optoelectrical conversion regions.

Abstract: An opto-electronic semiconductor component having a light transmission or receiving property including a light emitting or detecting active zone lying parallel to the principle surface of the semiconductor crystal is formed so that it detects or emits light directed parallel to the active zone with high efficiency. This enables the component to be hybridize with other electrical, electro-optical or optical elements in a single plane. At least one lateral surface of the semiconductor crystal is inclined at an angle to the principle surface of the component such that light directed into or from the crystal in a direction parallel to the active zone experiences deflection by refraction or reflection toward or away from the active zone.

Abstract: A light receiving semiconductor device includes a semiconductor substrate of a first conductivity type, a semiconductor layer of a second conductivity type formed on the substrate, isolation regions of the first conductivity type for separating the second conductivity type semiconductor layer into a plurality of islands, at least one of the second conductivity type islands and the first conductivity type substrate constituting a light receiving element, an anti-reflection film covering at least the entire surface of the island of the light receiving element, and a first conductivity type layer formed between the anti-reflection film and the second conductivity type island and extending to the first conductivity type isolation region surrounding the island of the light receiving element.

Abstract: Monolithic InSb array devices are described for staring infrared imaging systems operating in the 3-5 .mu.m spectral region. These devices are fabricated with only 4 mask levels compared to 5 mask levels for prior devices and have higher output dynamic ranges and greater wafer yield compared to previous designs. The devices are fabricated to include a substrate (15) having a field oxide (16) pattern thereon. A first gate oxide (17) is deposited over the field oxide with columns (21) patterned on the first gate oxide. A second gate oxide (19) is next deposited with rows (22) patterned on the second gate oxide. The devices can further include a passivation layer (29) deposited on the rows (22).