Abstract: Organic photovoltaic devices with compound charge transport layers are described herein. One such device includes a substrate, a first electrode coupled to the substrate, a second electrode disposed above the first electrode, and photoactive layers disposed between the first electrode and the second electrode. The device further includes a compound charge transport layer disposed between the photoactive layers and either the first electrode or the second electrode. The compound charge transport layer includes a charge transport layer and a metal-oxide interlayer disposed between the charge transport layer and the photoactive layers. The charge transport layer may be a hole transport layer or an electron transport layer.

Abstract: An imaging device includes a photoelectric conversion unit in which a first electrode, a photoelectric conversion layer, and a second electrode are stacked. A semiconductor material layer including an inorganic oxide semiconductor material having an amorphous structure at least in a portion is formed between the first electrode and the photoelectric conversion layer, and the formation energy of an inorganic oxide semiconductor material that has the same composition as the inorganic oxide semiconductor material having an amorphous structure and has a crystalline structure has a positive value.

Abstract: An image sensor may include: a pixel array including a plurality of pixels; and a timing controller configured to control the pixel array according to an operation mode of the pixel array. The operation mode may be any one of a first mode in which the plurality of pixels operate according to a global shutter method and a second mode in which the plurality of pixels operate according to a dual conversion gain method.

Abstract: A solid-state imaging device includes a plurality of pixels arranged in matrix form, each pixel including a photoelectric converter and a plurality of first transfer electrodes, and a plurality of control lines connected to mutually-corresponding ones of the first transfer electrodes in a plurality of pixels arranged in a specific row. The plurality of pixels include a plurality of first pixels and second pixels. Each of the first pixels includes a floating diffusion layer and a readout circuit. Each of the second pixels shares the floating diffusion layer with one of the first pixels arranged in a column direction. At least some of the plurality of control lines are further connected to the first transfer electrodes of pixels that are arranged adjacent in the column direction to respective ones of the plurality of pixels arranged in the specific row and that share at least one of the floating diffusion layers.

Abstract: A thin film transistor array panel includes a substrate; a plurality of gate lines that are formed on the substrate; a plurality of data lines that intersect the gate lines; a plurality of thin film transistors that are connected to the gate lines and the data lines; a plurality of color filters that are formed on upper parts of the gate lines, the data lines, and the thin film transistors; a common electrode that is formed on the color filters and that includes a transparent conductor; a passivation layer that is formed on an upper part of the common electrode; and a plurality of pixel electrodes that are formed on an upper part of the passivation layer and that are connected to a drain electrode of each of the thin film transistors.

Abstract: A photoelectric conversion device for detecting the spot size of incident light, includes a photoelectric conversion element having a photoelectric conversion substrate with two main surfaces, and first and second sensitivity section sections; and scanners that relatively scan incident light on the main surfaces of the photoelectric conversion element. When a sensitivity region on a main surface of the first sensitivity section is defined as a first sensitivity region and sensitivity regions that appear on a main surface of the second sensitivity sections are defined as second sensitivity regions, the first sensitivity region receives at least part of the light incident on the main surface during scanning, and has a pattern in which, in accordance with enlargement of an irradiation region irradiated with incident light on the main surface, the proportion of the first sensitivity region with respect to the second sensitivity regions in the irradiation region is decreased.

Abstract: Provided is an imaging device including a light source that radiates light in at least two different wavelength bands and an imaging element that acquires signals individually from the light in the two different wavelength bands. The two different wavelength bands include a first wavelength band from 400 to 580 nm for use in dermatoglyphic pattern authentication, and a second wavelength band of 650 nm or more mainly including near-infrared rays for use in vein authentication.

Abstract: An imaging device according to the present disclosure includes: a pixel including a photoelectric converter configured to generate a signal in response to entering light, a storage configured to store data corresponding to the signal, and an output section configured to output the data stored in the storage; and a controller configured to control the output section to output the data in a case where the data stored in the storage satisfies a predetermined condition.

Abstract: A photoelectric conversion element for detecting the spot size of incident light. The photoelectric conversion element includes a photoelectric conversion substrate having two principal surfaces, and the substrate includes a first sensitivity part and a second sensitivity part that are separated from each other. When a sensitivity area appearing on the principal surface of the first sensitivity part is defined as a first sensitivity area and a sensitivity area appearing on the principal surface of the second sensitivity part is defined as a second sensitivity area, the first sensitivity area receives at least a portion of incident light incident on a light receiving surface, and a pattern is formed such that an increase in an irradiation area of the principal surface irradiated with the incident light reduces the ratio of the first sensitivity area to the second sensitivity area in the irradiation area.

Abstract: To enhance, in the device that transfers the electric charges in the photodiode, the transfer efficiency of the electric charges. A photoelectric conversion element in a solid-state imaging device is provided with a plurality of electrodes and a plurality of detection terminals. A driver generates at a same time in the photoelectric conversion element a plurality of electric fields having directions different from each other by supplying a potential to each of the plurality of electrodes so as to transfer electric charges from all of terminals not corresponding to a transfer destination out of the plurality of detection terminals to a terminal at the transfer destination. A detection section detects a signal corresponding to an amount of the electric charges transferred to the terminal at the transfer destination.

Abstract: Imaging apparatus (100, 200) includes a photosensitive medium (302) configured to convert incident photons into charge carriers. A bias electrode (304) overlies the photosensitive medium and applies a bias potential to the photosensitive medium. One or more pixel circuits (306) are formed on a semiconductor substrate. Each pixel circuit defines a respective pixel (300) and includes first and second pixel electrodes (316, 318) coupled to collect the charge carriers from the photosensitive medium at respective first and second locations, and first and second transfer gates (326, 328) in respective proximity to the first and second pixel electrodes. Circuitry (700) is coupled to apply different, respective first and second potentials to the first and second transfer gates and to vary the first and second potentials so as to control relative proportions of the charge carriers that are collected by the first and second electrodes.

Abstract: A sensing element includes a conductive substrate, a zinc oxide seed layer, a plurality of zinc oxide nanorods, a film with an electrical double layer, and an organic sensing layer. The zinc oxide seed layer is located on the conductive substrate. The zinc oxide nanorods extend from the zinc oxide seed layer. The film with the electrical double layer covers the zinc oxide nanorods. The organic sensing layer is located on the film with the electrical double layer.

Abstract: An imaging apparatus includes a semiconductor substrate and a stack of layers of one or more dielectric materials and one or more conducting materials formed on the semiconductor substrate so as to define an array of pixel circuits including respective pixel electrodes at an upper layer of the stack of layers of one or more dielectric materials and one or more conducting materials and logic circuitry in an area adjacent to the array of pixel circuits. A light-absorbing layer is formed on the upper layer of the stack of layers of one or more dielectric materials and one or more conducting materials so as to overlie the area containing the logic circuitry and configured to absorb at least 90% of light that is incident on the light-absorbing layer. A layer of a photosensitive medium overlies the pixel electrodes.

Abstract: A camera device (2) for detecting a surrounding region (7) of a vehicle includes an optronic unit (3) configured to capture an image sequence of the surrounding region. The optronic unit includes a wide-angle lens and a high-resolution image sensor. The optronic unit is configured to reduce the resolution in images in the image sequence, in particular by pixel binning, alternatingly differently and asymmetrically in successive images of the sequence.

Abstract: A digital vision system for use in turbid, dark or stained water is disclosed. Turbid water is opaque to the optical wavelengths viewable by humans but is transparent to near infrared (NIR) light. Using NIR wavelength illumination in turbid water allows viewing of objects that would otherwise not be visible through turbid water. NIR light is used to illuminate an area to be viewed. Video cameras comprising optical filters receive the NIR light reflected from objects in the camera field of view, producing camera video signals that may be processed and communicated to projector that convert the video signals to independent optical output video that is projected to the eye of the at optical frequencies viewable by humans. The user is thus provided with a real time vision system that allows the diver to visualize objects otherwise not visible using white light illumination.

Abstract: Systems, methods, and devices for fluorescence imaging with a minimal area image sensor are disclosed. A system includes an emitter for emitting pulses of electromagnetic radiation and an image sensor comprising a pixel array for sensing reflected electromagnetic radiation, wherein the pixel array comprises active pixels and optical black pixels. The system includes a black clamp circuit providing offset control for data generated by the pixel array and a controller comprising a processor in electrical communication with the image sensor and the emitter. The system is such that at least a portion of the pulses of electromagnetic radiation emitted by the emitter comprises one or more of: electromagnetic radiation having a wavelength from about 770 nm to about 790 nm; or electromagnetic radiation having a wavelength from about 795 nm to about 815 nm.

Abstract: Disclosed herein is a thin film transistor substrate, including: an insulating substrate having a dummy area and a display area; a signal line formed in the dummy area on the insulating substrate; a switching element positioned in the display area on the insulating substrate; a color filter layer positioned in the display area on the insulating substrate and exposing a portion of the switching element through at least one contact hole; and a dummy color filter layer positioned on the dummy area on the insulating substrate and exposing a portion of the signal line through at least one dummy contact hole, wherein the at least one dummy contact hole formed on the dummy color filter layer and the at least one contact hole formed on the color filter layer are formed on the same position in a plane view.

Abstract: An optical sensor includes a semiconductor substrate having a first conductive type. The optical sensor further includes a photodiode disposed on the semiconductor substrate and a metal layer. The photodiode includes a first semiconductor layer having the first conductive type and a second semiconductor layer, formed on the first semiconductor layer, including a plurality of cathodes having a second conductive type. The first semiconductor layer is configured to collect photocurrent upon reception of incident light. The cathodes are configured to be electrically connected to the first semiconductor layer and the second semiconductor layer is configured to, based on the collected photocurrent, to track the incident light. The metal layer further includes a pinhole configured to collimate the incident light, and the plurality of cathodes form a rotational symmetry of order n with respect to an axis of the pinhole.

Abstract: A light-source device includes: two long-wavelength light sources that emit red long-wavelength light beams (LWLs); a broadband light source that emits a green broadband light beam (BL); and a multiplexing portion that multiplexes a wavelength region greater than a first predetermined wavelength ?1 of one of the LWLs having a longer peak wavelength and a wavelength region equal to or less than ?1 of the other LWL having a shorter peak wavelength, and that multiplexes a wavelength region greater than a second predetermined wavelength ?2 of the other LWL and a wavelength region equal to or less than ?2 of the BL, wherein intensities of the LWLs at ?1 are equal to or greater than 10% of the peak intensities thereof and intensities of the other LWL and the BL at ?2 are equal to or greater than 10% of the peak intensities thereof.

Abstract: An image sensor is provided. The image sensor includes: a first pixel column, including: a first pixel unit; a second pixel unit, vertically adjacent to the first pixel unit; a first column bit line coupled to the first pixel unit, wherein image data acquired by the first pixel unit is read out through the first column bit line; and a second column bit line coupled to the second pixel unit, wherein image data acquired by the second pixel unit is read out through the second column bit line; and a second pixel column horizontally adjacent to the first pixel column, wherein the first pixel column and the second pixel column are mirror-symmetrical with respect to a connection between the pixel units and the column bit lines.

Abstract: A method of manufacturing a semiconductor device includes the steps of preparing a semiconductor layer including a wide bandgap semiconductor, the semiconductor layer having an element region and an outer peripheral region surrounding an outer periphery of the element region when viewed two-dimensionally, forming a step portion surrounding the outer periphery of the element region in the outer peripheral region, and forming a metal layer along the step portion. The step portion has a sidewall recessed downward from a main surface of the element region in a cross section parallel to a thickness direction of the semiconductor layer, and the metal layer extends to cover at least a portion of the sidewall. The method of manufacturing a semiconductor device further includes the step of dividing the semiconductor layer into the element regions on an outside of the step portion when viewed from the element region.

Abstract: A focal-plane array includes: an array of thermal sensors arranged in at least 120 rows and at least 160 columns, the thermal sensors being divided among three or more subarrays; and bias circuitry to concurrently pulse bias the thermal sensors of one of the rows of each of the subarrays, and to sequentially bias the rows of each of the subarrays at a rate of at least 40,000 rows per second. A readout integrated circuit includes: a sensing area to physically and electrically connect to the array of thermal sensors and includes row circuitry to perform the concurrent pulse biasing and the sequential biasing, and column circuitry to concurrently measure analog signals from the pulse-biased thermal sensors; and conversion circuitry to convert the measured analog signals to corresponding digital signals. In some embodiments, the thermal sensors are operated without cooling. In some embodiments, the rows are interleaved between the subarrays.

Abstract: A white organic light emitting device includes a first emission part between a first electrode and a second electrode, and configured to include a first emission layer, the first electrode being a reflective electrode, a second emission part on the first emission part, and configured to include a second emission layer, and a third emission part on the second emission part, and configured to include a third emission layer.

Abstract: There is provided a photoelectric conversion film including a quinacridone derivative represented by the following General formula and a subphthalocyanine derivative represented by the following General formula.

Abstract: A device, system, and method for identifying an area of ablated tissue and/or assessing contact between a treatment element and tissue and/or assessing occlusion of a body lumen by the treatment element. Specifically, the device, system, and method may include a device having one or more fiber sensors and a processing unit for receiving emitted and/or reflected light from tissue and making one or more determinations based on the received light regarding ablated tissue, tissue contact, and/or occlusion. Each of the fiber sensors may include at least one multimode waveguide segment and at least one singlemode waveguide segment, or each of the fiber sensors may be singlemode waveguide including fiber Bragg grating for assessing strain of a treatment element by tissue contact. The processing unit may include a beam processing apparatus and a hyperspectral imaging and analysis apparatus, and may optionally include a light source.

Abstract: A three-dimensional multispectral imaging sensor and method for forming a three-dimensional multispectral imaging sensor are provided. The three-dimensional multispectral imaging sensor includes a monolithic structure having a plurality of layers. Each of the layers is formed from light detecting materials for detecting light of respective different non-overlapping wavelengths and having respective different bandgaps.

Abstract: An imaging array and method for fabricating the same are disclosed. The imaging array includes a semiconductor substrate having a plurality of VIS pixel sensors and a plurality of SWIR readout circuits fabricated therein. An insulating layer is deposited on the semiconductor substrate. The insulating array has wells overlying the SWIR pixel sensors. A plurality of SWIR photodiodes are deposited in the wells. Each SWIR photodiode is located in a corresponding one of the wells and is connected by an electrically conducting path with the SWIR readout circuit underlying the SWIR photodiode. An electrically conducting transparent electrode overlying the SWIR photodiodes is connected to each of the SWIR photodiodes.

Abstract: A vertically integrated multispectral imaging sensor includes a first metal contact layer on a substrate, an SiO2 layer on the first metal contact layer with a first detector element embedded in a hole therein, a first graphene layer that covers the first detector element, a second metal contact layer on the SiO2 layer on one side of the first graphene, an AlO3 layer on the SiO2 layer, in which a second detector element is embedded in a hole over the first graphene layer, a second graphene layer on the second detector element, and a third metal contact layer on the AlO3 layer adjacent to the second graphene layer. The first detector material is sensitive to a different wavelength band of the electromagnetic spectrum than the second detector material.

Abstract: A photodetector includes a lower contact layer, a first absorber layer that is formed over the lower contact layer and that is photosensitive to light of a first wavelength, an middle contact layer formed over the first absorber layer, a second absorber layer that is formed over the middle contact layer and that is photosensitive to light of a second wavelength, and an upper contact layer formed over the second absorber layer, wherein a barrier layer is formed between the lower contact layer and the first absorber layer, between the first absorber layer and the middle contact layer, between the middle contact layer and the second absorber layer, or between the second absorber layer and the upper contact layer.

Abstract: In an organic light emitting display device and a method of manufacturing the same, the organic light emitting display device has a color filter on thin film transistor (COT) structure, in which data wirings are formed after formation of a pixel electrode, thereby integrating a protective layer and a barrier layer. Thus, a manufacturing process may be simplified to increase productivity.

Abstract: Example embodiments relate to an organic photoelectronic device that includes a first electrode, a light-absorption layer on the first electrode and including a first p-type light-absorption material and a first n-type light-absorption material, a light-absorption auxiliary layer on the light-absorption layer and including a second p-type light-absorption material or a second n-type light-absorption material that have a smaller full width at half maximum (FWHM) than the FWHM of the light absorption layer, a charge auxiliary layer on the light-absorption auxiliary layer, and a second electrode on the charge auxiliary layer, and an image sensor including the same.

Abstract: An apparatus is described that includes a first semiconductor chip having a first pixel array. The first pixel array has visible light sensitive pixels. The apparatus includes a second semiconductor chip having a second pixel array. The first semiconductor chip is stacked on the second semiconductor chip such that the second pixel array resides beneath the first pixel array. The second pixel array has IR light sensitive pixels for time-of-flight based depth detection.

Abstract: A semiconducting structure configured to receive electromagnetic radiation, a method for manufacturing such a structure, and a semiconductor component, the semiconductor structure including: a first semiconducting area of a first type of conductivity, a second semiconducting area of a second type of conductivity opposite to the first type of conductivity, the second area being in contact with the first area to form a semiconducting junction. The second area includes a portion for which a concentration of majority carriers is at least ten times less than a concentration of majority carriers of the first area. The second area and its portion are essentially made in a first cavity configured to focus in the first cavity at least one portion of the electromagnetic radiation.

Abstract: A device including a substrate and an imaging element layer having a plurality of imaging elements is provided, where the imaging element layer is located between the substrate and a wiring layer having a plurality of wiring lines (41), and wiring lines of the wiring layer are arranged in pixel regions (Z) configured to receive light having a wavelength less than a predetermined wavelength (B, G). Accordingly, by more uniformly distributing the wiring layer throughout, it is possible to reduce an unevenness that occurs at a polishing film. Moreover, because wiring lines are not disposed in pixel regions (Z) configured to receive light having a wavelength greater than the predetermined wavelength (R), irregularities may be reduced.

Abstract: A photosensitive resin composition for a color filter includes (A) a yellow or orange dye; (B) a dye combination of a cyanine dye represented by the following Chemical Formula 1, wherein in Chemical Formula 1, each substituent is the same as described in the detailed description, and a metal complex dye; (C) an acrylic-based binder resin; (D) a photopolymerizable monomer; (E) a photopolymerization initiator; and (F) a solvent, and a color filter using the same.

Abstract: A method of determining the identity of a subject while the subject is walking or being transported in an essentially straight direction is disclosed, the two dimensional profile of the subject walking or being transported along forming a three dimensional swept volume, without requiring the subject to change direction to avoid any part of the system, comprising acquiring data related to one or more biometrics of the subject with the camera(s), processing the acquired biometrics data, and determining if the acquired biometric data match corresponding biometric data stored in the system, positioning camera(s) and strobed or scanned infrared illuminator(s) above, next to, or below the swept volume. A system for carrying out the method is also disclosed.

Abstract: Discussed is a white organic light emitting device for enhancing emission efficiency and panel efficiency. The white organic light emitting device can include a first emission part between a first electrode and a second electrode and configured to include a first emission layer (EML), a second emission part on the first emission part and configured to include a second EML, and a third emission part on the second emission part and configured to include a third EML. The first to third emission parts have an emission position of emitting layers (EPEL) structure in which the first to third emission parts have a maximum emission range in respective emission areas of the first to third EMLs.

Abstract: Display device, including: substrates, color filters having first and second color filters, drain and gate signal lines (of light blocking material), wherein, an overlapping portion adjacent the first and second color filter overlap, is formed on a region with one of the drain or gate signal lines, a first color filter edge is a first taper and a second color filter edge is a second taper, in the overlapping portion, the first taper is closer to the drain or gate signal line than the second taper in the overlapping portion, the first taper angle is 45° or more and 90° or less corresponding to a surface of the drain or gate signal line, the second taper angle is 45° or more and 90° or less corresponding to a surface of the first taper and, the first taper angle is larger than the second taper angle.

Abstract: A structure includes a silicon substrate; silicon readout circuitry disposed on a first portion of a top surface of the substrate and a radiation detecting pixel disposed on a second portion of the top surface of the substrate. The pixel has a plurality of radiation detectors connected with the readout circuitry. The plurality of radiation detectors are composed of at least one visible wavelength radiation detector containing germanium and at least one infrared wavelength radiation detector containing a Group III-V semiconductor material. A method includes providing a silicon substrate; forming silicon readout circuitry on a first portion of a top surface of the substrate and forming a radiation detecting pixel, on a second portion of the top surface of the substrate, that has a plurality of radiation detectors formed to contain a visible wavelength detector composed of germanium and an infrared wavelength detector composed of a Group III-V semiconductor material.

Abstract: An organic electroluminescence device includes a pair of electrodes and an organic compound layer interposed therebetween. The organic compound layer includes a plurality of emitting layers at least including a first emitting layer and a second emitting layer. The first emitting layer contains a first host material and a fluorescent first luminescent material. The second emitting layer contains a second luminescent material that is different from the first luminescent material. A difference ?ST(H1) between singlet energy EgS(H1) of the first host material and an energy gap Eg77K(H1) at 77[K] of the first host material satisfies a specific relationship. One of the first luminescent material and the second luminescent material has a main peak wavelength from 400 nm to less than 500 nm and the other of the first luminescent material and the second luminescent material has a main peak wavelength from 500 nm to 700 nm.

Abstract: Array cameras incorporating quantum film imagers are disclosed. One embodiment includes: a plurality of focal planes, where each focal plane comprises a plurality of rows of pixels that also form a plurality of columns of pixels and each focal plane is contained within a region of the imager array that does not contain pixels from another focal plane; at least one quantum film located on the surface of the imager array, where each quantum film comprises a plurality of quantum dots; control circuitry configured to control the capture of image information by the pixels within the focal planes, where the control circuitry is configured so that the capture of image information by the pixels in at least two of the focal planes is separately controllable; and sampling circuitry configured to convert pixel outputs into digital pixel data.

Abstract: A semiconductor device that includes: a pair of photoelectric transducers that output photocurrent that accords with an intensity of received light; and a first filter film that is provided to a light incidence side of one out of the pair of photoelectric transducers, that is configured by alternatingly stacking high refractive index layers and low refractive index layers having mutually different refractive indexes, and that transmits one out of either UV-A waves or UV-B waves included in ultraviolet rays with a higher transmittance than the other out of the UV-A waves and the UV-B waves.

Abstract: A color filter pattern including a plurality of color filters arranged in a pattern and the manufacturing method thereof are provided. By performing at least one two-stage exposure process to a color filter layer, the plurality of color filters are formed with a sharp profile.

Abstract: In an example embodiment, an image processing device includes a pixel array including pixels two-dimensionally arranged and configured to capture an image, each of the pixels including a plurality of photoelectric conversion elements and an image data processing circuit configured to generate image data from pixel signals output from the pixels. The image processing device further includes a color data processing circuit configured to extract color data from the image data and output extracted color data. The image processing device further includes a depth data extraction circuit configured to extract depth data from the image data and output extracted depth data. The image processing device further includes an output control circuit configured to control the output of the color data and the depth data.

Abstract: A heat dissipation system for an optical communications module is provided that includes a cold block on which the optoelectronic components and a lens assembly of an OSA of the module are mounted. The cold block has precisely-controlled mounting surface heights that precisely passively align the lens assembly in directions normal to mounting surfaces of the cold block. The cold block is made of a material of very high thermal conductivity, typically copper, so that heat generated by the optoelectronic components is dissipated into the cold block to maintain the optoelectronic components well below maximum allowable temperatures. In addition, an optical interface device of the OSA has a low-profile and an optical configuration that allows it to be used with a high optical fiber count.

Abstract: An imaging system may include a first image sensor die stacked on top of a second image sensor die. A pixel array may include first pixels having photodiodes in the first image sensor die and second pixels having photodiodes in the second image sensor die. The first pixels may be optimized to detect a first type of electromagnetic radiation (e.g., visible light), whereas the second pixels may be optimized to detect a second type of electromagnetic radiation (e.g., infrared light). Light guide channels may be formed in the first image sensor die to help guide incident light to the photodiodes in the second image sensor substrate. The first and second image sensor dies may be bonded at a wafer level. A first image sensor wafer may be a backside illumination image sensor wafer and a second image sensor wafer may be a front or backside illumination image sensor wafer.

Abstract: An optical radiation detection system (100) comprising: an optical medium (1) structured to define a region (5) suitable for transmitting an optical radiation and being associated to at least one electric parameter varying as a function of the optical radiation concerning said region; at least one electrode (2, 3) electrically coupled to the optical medium (1), and spaced from said region (5), an electric power generator (4) connected to said at least one electrode (2) and structured to provide an electric signal (Se) to be applied to the optical medium. Further, the system comprises an electric measuring circuit (50) connected to said at least one electrode (2) and structured to provide a measuring electric signal (SM) representing a variation of said at least one electric parameter.

Abstract: A sacrificial coating on an intermediate transfer member of an aqueous ink imaging system is disclosed. The sacrificial coating is made from ingredients comprising: a waxy starch; at least one polycarboxylic acid cross-linking agent; at least one hygroscopic material; and at least one surfactant.

Abstract: A light emitting device includes a substrate layer, first and second metal layers sequentially formed on the substrate layer, and an organic material layer formed between the first and second metal layers. The first metal layer has a uniform thickness or has metal portions or further has an open portion exposing a portion of the surface of the substrate layer. The organic material layer includes a hole transport material and an electron transport material in contact with one another. An interaction between the hole transport material and the electron transport material generates exciplexes capable of emitting light having a peak wavelength in a first range, and a coupling is generated between the first and second metal layers. By adjusting the distance between the first and second metal layers or the thickness of the first metal layer, the peak wavelength of the light is shifted to a second range and/or a third range.

Abstract: A two-terminal detector has a back-to-back p/n/p SWIR/MWIR stack structure, which includes P-SWIR absorber, N-SWIR, wide bandgap bather, N-MWIR absorber, and P-MWIR layers, with contacts on the P-MWIR and P-SWIR layers. The junction between the SWIR layers and the junction between the MWIR layers are preferably passivated. The detector stack is preferably arranged such that a negative bias applied to the top of the stack reverse-biases the MWIR junction and forward-biases the SWIR junction, such that the detector collects photocurrent from MWIR radiation. A positive bias forward-biases the MWIR junction and reverse-biases the SWIR junction, such that photocurrent from SWIR radiation is collected. A larger positive bias induces electron avalanche at the SWIR junction, thereby providing detector sensitivity sufficient to provide low light level passive amplified imaging. Detector sensitivity in this mode is preferably sufficient to provide high resolution 3-D eye-safe LADAR imaging.