With Different Sensor Portions Responsive To Different Wavelengths (e.g., Color Imager) Patents (Class 257/440)
  • Patent number: 10278757
    Abstract: A device, system, and method for identifying an area of ablated tissue and/or assessing contact between a treatment element and tissue and/or assessing occlusion of a body lumen by the treatment element. Specifically, the device, system, and method may include a device having one or more fiber sensors and a processing unit for receiving emitted and/or reflected light from tissue and making one or more determinations based on the received light regarding ablated tissue, tissue contact, and/or occlusion. Each of the fiber sensors may include at least one multimode waveguide segment and at least one singlemode waveguide segment, or each of the fiber sensors may be singlemode waveguide including fiber Bragg grating for assessing strain of a treatment element by tissue contact. The processing unit may include a beam processing apparatus and a hyperspectral imaging and analysis apparatus, and may optionally include a light source.
    Type: Grant
    Filed: October 20, 2015
    Date of Patent: May 7, 2019
    Assignee: Medtronic CryoCath LP
    Inventor: Rahmani Sara
  • Patent number: 10276626
    Abstract: A three-dimensional multispectral imaging sensor and method for forming a three-dimensional multispectral imaging sensor are provided. The three-dimensional multispectral imaging sensor includes a monolithic structure having a plurality of layers. Each of the layers is formed from light detecting materials for detecting light of respective different non-overlapping wavelengths and having respective different bandgaps.
    Type: Grant
    Filed: December 28, 2017
    Date of Patent: April 30, 2019
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Qing Cao, Shu-Jen Han
  • Patent number: 10277838
    Abstract: An imaging array and method for fabricating the same are disclosed. The imaging array includes a semiconductor substrate having a plurality of VIS pixel sensors and a plurality of SWIR readout circuits fabricated therein. An insulating layer is deposited on the semiconductor substrate. The insulating array has wells overlying the SWIR pixel sensors. A plurality of SWIR photodiodes are deposited in the wells. Each SWIR photodiode is located in a corresponding one of the wells and is connected by an electrically conducting path with the SWIR readout circuit underlying the SWIR photodiode. An electrically conducting transparent electrode overlying the SWIR photodiodes is connected to each of the SWIR photodiodes.
    Type: Grant
    Filed: July 28, 2016
    Date of Patent: April 30, 2019
    Assignee: BAE Systems Imaging Solutions Inc.
    Inventors: Xinqiao Liu, Boyd Fowler
  • Patent number: 10256306
    Abstract: A vertically integrated multispectral imaging sensor includes a first metal contact layer on a substrate, an SiO2 layer on the first metal contact layer with a first detector element embedded in a hole therein, a first graphene layer that covers the first detector element, a second metal contact layer on the SiO2 layer on one side of the first graphene, an AlO3 layer on the SiO2 layer, in which a second detector element is embedded in a hole over the first graphene layer, a second graphene layer on the second detector element, and a third metal contact layer on the AlO3 layer adjacent to the second graphene layer. The first detector material is sensitive to a different wavelength band of the electromagnetic spectrum than the second detector material.
    Type: Grant
    Filed: November 30, 2017
    Date of Patent: April 9, 2019
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Qing Cao, Ning Li, Jianshi Tang
  • Patent number: 10236319
    Abstract: A photodetector includes a lower contact layer, a first absorber layer that is formed over the lower contact layer and that is photosensitive to light of a first wavelength, an middle contact layer formed over the first absorber layer, a second absorber layer that is formed over the middle contact layer and that is photosensitive to light of a second wavelength, and an upper contact layer formed over the second absorber layer, wherein a barrier layer is formed between the lower contact layer and the first absorber layer, between the first absorber layer and the middle contact layer, between the middle contact layer and the second absorber layer, or between the second absorber layer and the upper contact layer.
    Type: Grant
    Filed: August 10, 2017
    Date of Patent: March 19, 2019
    Assignee: FUJITSU LIMITED
    Inventors: Ryo Suzuki, Hiroyasu Yamashita, Junichi Kon, Hironori Nishino
  • Patent number: 10211264
    Abstract: In an organic light emitting display device and a method of manufacturing the same, the organic light emitting display device has a color filter on thin film transistor (COT) structure, in which data wirings are formed after formation of a pixel electrode, thereby integrating a protective layer and a barrier layer. Thus, a manufacturing process may be simplified to increase productivity.
    Type: Grant
    Filed: November 19, 2015
    Date of Patent: February 19, 2019
    Assignee: LG Display Co., Ltd.
    Inventors: YoungHak Lee, ByungGeun Lee, SuZy Ahn
  • Patent number: 10141366
    Abstract: An apparatus is described that includes a first semiconductor chip having a first pixel array. The first pixel array has visible light sensitive pixels. The apparatus includes a second semiconductor chip having a second pixel array. The first semiconductor chip is stacked on the second semiconductor chip such that the second pixel array resides beneath the first pixel array. The second pixel array has IR light sensitive pixels for time-of-flight based depth detection.
    Type: Grant
    Filed: September 1, 2017
    Date of Patent: November 27, 2018
    Assignee: Google Inc.
    Inventor: Chung Chun Wan
  • Patent number: 10141376
    Abstract: Example embodiments relate to an organic photoelectronic device that includes a first electrode, a light-absorption layer on the first electrode and including a first p-type light-absorption material and a first n-type light-absorption material, a light-absorption auxiliary layer on the light-absorption layer and including a second p-type light-absorption material or a second n-type light-absorption material that have a smaller full width at half maximum (FWHM) than the FWHM of the light absorption layer, a charge auxiliary layer on the light-absorption auxiliary layer, and a second electrode on the charge auxiliary layer, and an image sensor including the same.
    Type: Grant
    Filed: May 12, 2017
    Date of Patent: November 27, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyung Bae Park, Satoh Ryuichi, Gae Hwang Lee, Kwang Hee Lee, Dong-Seok Leem, Yong Wan Jin, Tadao Yagi, Chul Joon Heo
  • Patent number: 10128386
    Abstract: A semiconducting structure configured to receive electromagnetic radiation, a method for manufacturing such a structure, and a semiconductor component, the semiconductor structure including: a first semiconducting area of a first type of conductivity, a second semiconducting area of a second type of conductivity opposite to the first type of conductivity, the second area being in contact with the first area to form a semiconducting junction. The second area includes a portion for which a concentration of majority carriers is at least ten times less than a concentration of majority carriers of the first area. The second area and its portion are essentially made in a first cavity configured to focus in the first cavity at least one portion of the electromagnetic radiation.
    Type: Grant
    Filed: June 19, 2013
    Date of Patent: November 13, 2018
    Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
    Inventors: Francois Boulard, Roch Espiau De Lamaestre, David Fowler, Olivier Gravrand, Johan Rothman
  • Patent number: 10050077
    Abstract: A device including a substrate and an imaging element layer having a plurality of imaging elements is provided, where the imaging element layer is located between the substrate and a wiring layer having a plurality of wiring lines (41), and wiring lines of the wiring layer are arranged in pixel regions (Z) configured to receive light having a wavelength less than a predetermined wavelength (B, G). Accordingly, by more uniformly distributing the wiring layer throughout, it is possible to reduce an unevenness that occurs at a polishing film. Moreover, because wiring lines are not disposed in pixel regions (Z) configured to receive light having a wavelength greater than the predetermined wavelength (R), irregularities may be reduced.
    Type: Grant
    Filed: July 22, 2014
    Date of Patent: August 14, 2018
    Assignee: Sony Corporation
    Inventor: Tadahiro Hagita
  • Patent number: 10011672
    Abstract: A photosensitive resin composition for a color filter includes (A) a yellow or orange dye; (B) a dye combination of a cyanine dye represented by the following Chemical Formula 1, wherein in Chemical Formula 1, each substituent is the same as described in the detailed description, and a metal complex dye; (C) an acrylic-based binder resin; (D) a photopolymerizable monomer; (E) a photopolymerization initiator; and (F) a solvent, and a color filter using the same.
    Type: Grant
    Filed: December 10, 2013
    Date of Patent: July 3, 2018
    Assignee: Samsung SDI Co., Ltd.
    Inventors: In-Jae Lee, Dong-Wan Kim, Ji-Hong Kim, Jee-Hyun Ryu, Ji-Young Jeong, Seung-Jib Choi
  • Patent number: 9984290
    Abstract: A method of determining the identity of a subject while the subject is walking or being transported in an essentially straight direction is disclosed, the two dimensional profile of the subject walking or being transported along forming a three dimensional swept volume, without requiring the subject to change direction to avoid any part of the system, comprising acquiring data related to one or more biometrics of the subject with the camera(s), processing the acquired biometrics data, and determining if the acquired biometric data match corresponding biometric data stored in the system, positioning camera(s) and strobed or scanned infrared illuminator(s) above, next to, or below the swept volume. A system for carrying out the method is also disclosed.
    Type: Grant
    Filed: April 14, 2017
    Date of Patent: May 29, 2018
    Assignee: Eyelock LLC
    Inventors: Keith J. Hanna, Hector T. Hoyos
  • Patent number: 9966551
    Abstract: Discussed is a white organic light emitting device for enhancing emission efficiency and panel efficiency. The white organic light emitting device can include a first emission part between a first electrode and a second electrode and configured to include a first emission layer (EML), a second emission part on the first emission part and configured to include a second EML, and a third emission part on the second emission part and configured to include a third EML. The first to third emission parts have an emission position of emitting layers (EPEL) structure in which the first to third emission parts have a maximum emission range in respective emission areas of the first to third EMLs.
    Type: Grant
    Filed: May 22, 2017
    Date of Patent: May 8, 2018
    Assignee: LG DISPLAY CO., LTD.
    Inventors: Ki-Woog Song, Sung Hoon Pieh, Youn Seok Kam, Tae Shick Kim, Se Ung Kim, Hyung June Kim
  • Patent number: 9933668
    Abstract: Display device, including: substrates, color filters having first and second color filters, drain and gate signal lines (of light blocking material), wherein, an overlapping portion adjacent the first and second color filter overlap, is formed on a region with one of the drain or gate signal lines, a first color filter edge is a first taper and a second color filter edge is a second taper, in the overlapping portion, the first taper is closer to the drain or gate signal line than the second taper in the overlapping portion, the first taper angle is 45° or more and 90° or less corresponding to a surface of the drain or gate signal line, the second taper angle is 45° or more and 90° or less corresponding to a surface of the first taper and, the first taper angle is larger than the second taper angle.
    Type: Grant
    Filed: December 30, 2015
    Date of Patent: April 3, 2018
    Assignees: Japan Display Inc., Panasonic Liquid Crystal Co. Lt.
    Inventors: Yasuhiro Mizuno, Junji Tanno, Shinsuke Hayahara, Masato Sakurai, Yasukazu Kimura, Jun Fujiyoshi
  • Patent number: 9917122
    Abstract: A structure includes a silicon substrate; silicon readout circuitry disposed on a first portion of a top surface of the substrate and a radiation detecting pixel disposed on a second portion of the top surface of the substrate. The pixel has a plurality of radiation detectors connected with the readout circuitry. The plurality of radiation detectors are composed of at least one visible wavelength radiation detector containing germanium and at least one infrared wavelength radiation detector containing a Group III-V semiconductor material. A method includes providing a silicon substrate; forming silicon readout circuitry on a first portion of a top surface of the substrate and forming a radiation detecting pixel, on a second portion of the top surface of the substrate, that has a plurality of radiation detectors formed to contain a visible wavelength detector composed of germanium and an infrared wavelength detector composed of a Group III-V semiconductor material.
    Type: Grant
    Filed: June 29, 2016
    Date of Patent: March 13, 2018
    Assignee: International Business Machines Corporation
    Inventors: Ning Li, Devendra K. Sadana, Robert L. Wisnieff
  • Patent number: 9899620
    Abstract: An organic electroluminescence device includes a pair of electrodes and an organic compound layer interposed therebetween. The organic compound layer includes a plurality of emitting layers at least including a first emitting layer and a second emitting layer. The first emitting layer contains a first host material and a fluorescent first luminescent material. The second emitting layer contains a second luminescent material that is different from the first luminescent material. A difference ?ST(H1) between singlet energy EgS(H1) of the first host material and an energy gap Eg77K(H1) at 77[K] of the first host material satisfies a specific relationship. One of the first luminescent material and the second luminescent material has a main peak wavelength from 400 nm to less than 500 nm and the other of the first luminescent material and the second luminescent material has a main peak wavelength from 500 nm to 700 nm.
    Type: Grant
    Filed: February 22, 2017
    Date of Patent: February 20, 2018
    Assignee: IDEMITSU KOSAN CO. LTD.
    Inventors: Toshinari Ogiwara, Yukitoshi Jinde
  • Patent number: 9888194
    Abstract: Array cameras incorporating quantum film imagers are disclosed. One embodiment includes: a plurality of focal planes, where each focal plane comprises a plurality of rows of pixels that also form a plurality of columns of pixels and each focal plane is contained within a region of the imager array that does not contain pixels from another focal plane; at least one quantum film located on the surface of the imager array, where each quantum film comprises a plurality of quantum dots; control circuitry configured to control the capture of image information by the pixels within the focal planes, where the control circuitry is configured so that the capture of image information by the pixels in at least two of the focal planes is separately controllable; and sampling circuitry configured to convert pixel outputs into digital pixel data.
    Type: Grant
    Filed: March 11, 2014
    Date of Patent: February 6, 2018
    Assignee: FotoNation Cayman Limited
    Inventor: Jacques Duparre
  • Patent number: 9876126
    Abstract: A semiconductor device that includes: a pair of photoelectric transducers that output photocurrent that accords with an intensity of received light; and a first filter film that is provided to a light incidence side of one out of the pair of photoelectric transducers, that is configured by alternatingly stacking high refractive index layers and low refractive index layers having mutually different refractive indexes, and that transmits one out of either UV-A waves or UV-B waves included in ultraviolet rays with a higher transmittance than the other out of the UV-A waves and the UV-B waves.
    Type: Grant
    Filed: October 18, 2016
    Date of Patent: January 23, 2018
    Assignee: LAPIS SEMICONDUCTOR CO., LTD.
    Inventor: Masao Okihara
  • Patent number: 9857508
    Abstract: A color filter pattern including a plurality of color filters arranged in a pattern and the manufacturing method thereof are provided. By performing at least one two-stage exposure process to a color filter layer, the plurality of color filters are formed with a sharp profile.
    Type: Grant
    Filed: October 6, 2016
    Date of Patent: January 2, 2018
    Assignee: United Microelectronics Corp.
    Inventors: Hsin-Ting Tsai, Cheng-Hung Yu, Chin-Kuang Liu, Ming-Hsin Lee
  • Patent number: 9848153
    Abstract: In an example embodiment, an image processing device includes a pixel array including pixels two-dimensionally arranged and configured to capture an image, each of the pixels including a plurality of photoelectric conversion elements and an image data processing circuit configured to generate image data from pixel signals output from the pixels. The image processing device further includes a color data processing circuit configured to extract color data from the image data and output extracted color data. The image processing device further includes a depth data extraction circuit configured to extract depth data from the image data and output extracted depth data. The image processing device further includes an output control circuit configured to control the output of the color data and the depth data.
    Type: Grant
    Filed: October 6, 2016
    Date of Patent: December 19, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Tae Chan Kim
  • Patent number: 9791645
    Abstract: A heat dissipation system for an optical communications module is provided that includes a cold block on which the optoelectronic components and a lens assembly of an OSA of the module are mounted. The cold block has precisely-controlled mounting surface heights that precisely passively align the lens assembly in directions normal to mounting surfaces of the cold block. The cold block is made of a material of very high thermal conductivity, typically copper, so that heat generated by the optoelectronic components is dissipated into the cold block to maintain the optoelectronic components well below maximum allowable temperatures. In addition, an optical interface device of the OSA has a low-profile and an optical configuration that allows it to be used with a high optical fiber count.
    Type: Grant
    Filed: September 30, 2015
    Date of Patent: October 17, 2017
    Assignee: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
    Inventors: David J. K. Meadowcroft, Robert G. Ritter, Pengyue Wen, Hui Xu
  • Patent number: 9749553
    Abstract: An imaging system may include a first image sensor die stacked on top of a second image sensor die. A pixel array may include first pixels having photodiodes in the first image sensor die and second pixels having photodiodes in the second image sensor die. The first pixels may be optimized to detect a first type of electromagnetic radiation (e.g., visible light), whereas the second pixels may be optimized to detect a second type of electromagnetic radiation (e.g., infrared light). Light guide channels may be formed in the first image sensor die to help guide incident light to the photodiodes in the second image sensor substrate. The first and second image sensor dies may be bonded at a wafer level. A first image sensor wafer may be a backside illumination image sensor wafer and a second image sensor wafer may be a front or backside illumination image sensor wafer.
    Type: Grant
    Filed: August 15, 2014
    Date of Patent: August 29, 2017
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Swarnal Borthakur, Ulrich Boettiger, Sergey Velichko
  • Patent number: 9722124
    Abstract: An optical radiation detection system (100) comprising: an optical medium (1) structured to define a region (5) suitable for transmitting an optical radiation and being associated to at least one electric parameter varying as a function of the optical radiation concerning said region; at least one electrode (2, 3) electrically coupled to the optical medium (1), and spaced from said region (5), an electric power generator (4) connected to said at least one electrode (2) and structured to provide an electric signal (Se) to be applied to the optical medium. Further, the system comprises an electric measuring circuit (50) connected to said at least one electrode (2) and structured to provide a measuring electric signal (SM) representing a variation of said at least one electric parameter.
    Type: Grant
    Filed: December 23, 2013
    Date of Patent: August 1, 2017
    Assignee: Politecnico di Milano
    Inventors: Andrea Melloni, Marco Sampietro, Stefano Grillanda, Francesco Morichetti, Marco Carminati, Giorgio Ferrari
  • Patent number: 9718964
    Abstract: A sacrificial coating on an intermediate transfer member of an aqueous ink imaging system is disclosed. The sacrificial coating is made from ingredients comprising: a waxy starch; at least one polycarboxylic acid cross-linking agent; at least one hygroscopic material; and at least one surfactant.
    Type: Grant
    Filed: August 19, 2015
    Date of Patent: August 1, 2017
    Assignee: Xerox Corporation
    Inventors: James R. Larson, Jeffrey J. Folkins, Mandakini Kanungo, Santokh S. Badesha
  • Patent number: 9704924
    Abstract: A light emitting device includes a substrate layer, first and second metal layers sequentially formed on the substrate layer, and an organic material layer formed between the first and second metal layers. The first metal layer has a uniform thickness or has metal portions or further has an open portion exposing a portion of the surface of the substrate layer. The organic material layer includes a hole transport material and an electron transport material in contact with one another. An interaction between the hole transport material and the electron transport material generates exciplexes capable of emitting light having a peak wavelength in a first range, and a coupling is generated between the first and second metal layers. By adjusting the distance between the first and second metal layers or the thickness of the first metal layer, the peak wavelength of the light is shifted to a second range and/or a third range.
    Type: Grant
    Filed: June 30, 2015
    Date of Patent: July 11, 2017
    Assignee: Industrial Technology Research Institute
    Inventors: Yi-Ping Lin, Jung-Yu Li, Guan-Yu Chen, Shih-Pu Chen, Jin-Han Wu, Cheng-Chang Chen
  • Patent number: 9685622
    Abstract: Discussed is a white organic light emitting device for enhancing emission efficiency and panel efficiency. The white organic light emitting device can include a first emission part between a first electrode and a second electrode and configured to include a first emission layer (EML), a second emission part on the first emission part and configured to include a second EML, and a third emission part on the second emission part and configured to include a third EML. The first to third emission parts have an emission position of emitting layers (EPEL) structure in which the first to third emission parts have a maximum emission range in respective emission areas of the first to third EMLs.
    Type: Grant
    Filed: March 30, 2015
    Date of Patent: June 20, 2017
    Assignee: LG Display Co., Ltd.
    Inventors: Ki-Woog Song, Sung Hoon Pieh, Youn Seok Kam, Tae Shick Kim, Se Ung Kim, Hyung June Kim
  • Patent number: 9685477
    Abstract: A two-terminal detector has a back-to-back p/n/p SWIR/MWIR stack structure, which includes P-SWIR absorber, N-SWIR, wide bandgap bather, N-MWIR absorber, and P-MWIR layers, with contacts on the P-MWIR and P-SWIR layers. The junction between the SWIR layers and the junction between the MWIR layers are preferably passivated. The detector stack is preferably arranged such that a negative bias applied to the top of the stack reverse-biases the MWIR junction and forward-biases the SWIR junction, such that the detector collects photocurrent from MWIR radiation. A positive bias forward-biases the MWIR junction and reverse-biases the SWIR junction, such that photocurrent from SWIR radiation is collected. A larger positive bias induces electron avalanche at the SWIR junction, thereby providing detector sensitivity sufficient to provide low light level passive amplified imaging. Detector sensitivity in this mode is preferably sufficient to provide high resolution 3-D eye-safe LADAR imaging.
    Type: Grant
    Filed: September 22, 2014
    Date of Patent: June 20, 2017
    Assignee: TELEDYNE SCIENTIFIC & IMAGING, LLC
    Inventors: William E. Tennant, Donald L. Lee
  • Patent number: 9673259
    Abstract: Example embodiments relate to an organic photoelectronic device that includes a first electrode, a light-absorption layer on the first electrode and including a first p-type light-absorption material and a first n-type light-absorption material, a light-absorption auxiliary layer on the light-absorption layer and including a second p-type light-absorption material or a second n-type light-absorption material that have a smaller full width at half maximum (FWHM) than the FWHM of the light absorption layer, a charge auxiliary layer on the light-absorption auxiliary layer, and a second electrode on the charge auxiliary layer, and an image sensor including the same.
    Type: Grant
    Filed: January 23, 2015
    Date of Patent: June 6, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyung Bae Park, Satoh Ryuichi, Gae Hwang Lee, Kwang Hee Lee, Dong-Seok Leem, Yong Wan Jin, Tadao Yagi, Chul Joon Heo
  • Patent number: 9653622
    Abstract: An image pickup apparatus includes photoelectric conversion units each including a first semiconductor region of a first conductivity type and a semiconductor region of a second conductivity type disposed in contact with the first semiconductor region, a potential barrier formed between photoelectric conversion units, and a contact plug disposed in an image sensing area. The number of contact plugs is smaller than the number of photoelectric conversion units. The photoelectric conversion units include first and second photoelectric conversion units and are arranged such that at least two first photoelectric conversion units are adjacent in a first direction. The potential barrier includes a first part formed between the two first photoelectric conversion units disposed adjacently and a second part formed between first and second photoelectric conversion units adjacent to each other. The contact plug is located closer to the first part than to the second part.
    Type: Grant
    Filed: January 15, 2013
    Date of Patent: May 16, 2017
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Michiko Johnson, Masahiro Kobayashi, Yoichi Wada, Hiromasa Tsuboi
  • Patent number: 9653630
    Abstract: The performance of lead sulfide quantum dot (QD) photovoltaic cells is improved by exposing a QD layer to a solution containing metal salts after the synthesis of the QDs is completed. The halide ions from the salt solution passivate surface lead (Pb) sites and alkali metal ions mend Pb vacancies. Metal cations and halide anions with small ionic radius have high probability of reaching QD surfaces to eliminate surface recombination sites. Compared to control devices fabricated using only a ligand exchange procedure without salt exposure, devices with metal salt treatment show increases in both the form factor and short circuit current of the PV cell. Some embodiments comprise a method for treatment of QDs with a salt solution and ligand exchange. Other embodiments comprise a photovoltaic cell having a QD layer treated with a salt solution and ligand exchange.
    Type: Grant
    Filed: May 5, 2014
    Date of Patent: May 16, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Su Kyung Suh, Dong-Kyun Ko, Vladmir Bulovic, Moungi Bawendi
  • Patent number: 9614170
    Abstract: An organic electroluminescence device includes a pair of electrodes and an organic compound layer interposed therebetween. The organic compound layer includes a plurality of emitting layers at least including a first emitting layer and a second emitting layer. The first emitting layer contains a first host material and a fluorescent first luminescent material. The second emitting layer contains a second luminescent material that is different from the first luminescent material. A difference ?ST(H1) between singlet energy EgS(H1) of the first host material and an energy gap Eg77K(H1) at 77[K] of the first host material satisfies a specific relationship. One of the first luminescent material and the second luminescent material has a main peak wavelength from 400 nm to less than 500 nm and the other of the first luminescent material and the second luminescent material has a main peak wavelength from 500 nm to 700 nm.
    Type: Grant
    Filed: September 24, 2013
    Date of Patent: April 4, 2017
    Assignee: IDEMITSU KOSAN CO., LTD.
    Inventors: Toshinari Ogiwara, Yukitoshi Jinde
  • Patent number: 9605833
    Abstract: An optical component is disclosed that comprises a first substrate, an optical material comprising quantum confined semiconductor nanoparticles disposed over a predetermined region of a first surface of the first substrate, a layer comprising an adhesive material disposed over the optical material and any portion of the first surface of the first substrate not covered by the optical material, and a second substrate disposed over the layer comprising an adhesive material, wherein the first and second substrates are sealed together. In certain embodiments, the optical component further includes a second optical material comprising quantum confined semiconductor nanoparticles disposed between the layer comprising the adhesive material and the second substrate. Method are also disclosed. Also disclosed are products including the optical component.
    Type: Grant
    Filed: September 14, 2015
    Date of Patent: March 28, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: John R. Linton, Emily M. Squires, Rohit Modi, David Gildea
  • Patent number: 9595909
    Abstract: An electricity storing solar power generation device 10 includes: solar cells including at least two kinds of solar cells 11, 12 and 13 having mutually different spectral absorption sensitivities; and electricity storing devices 21, 22 and 23 electrically connected to the solar cells. The solar cells are configured such that an nth (n being an integer of 1 or greater) solar cell spontaneously disperses light by itself by transmitting or reflecting light so as to allow a portion of light incident on the nth solar cell other than a portion of light absorbed by the nth solar cell to fall on an n+1th solar cell having a smaller band gap. Each of the solar cells is electrically connected to one of the electricity storing devices, and electric power generated by the solar cells is stored in the electricity storing devices electrically connected to the two or more solar cells.
    Type: Grant
    Filed: January 28, 2014
    Date of Patent: March 14, 2017
    Assignee: National University Corporation Tokyo University of Agriculture and Technology
    Inventor: Toshiyuki Sameshima
  • Patent number: 9530051
    Abstract: There is provided a pupil tracking device including an active light source, an image sensor and a processing unit. The active light source emits light toward an eyeball alternatively in a first brightness value and a second brightness value. The image sensor captures a first brightness image corresponding to the first brightness value and a second brightness image corresponding to the second brightness value. The processing unit identifies a brightest region at corresponding positions of the first brightness image and the second brightness image as an active light image.
    Type: Grant
    Filed: October 15, 2013
    Date of Patent: December 27, 2016
    Assignee: PIXART IMAGING INC.
    Inventors: Yu-Hao Huang, Ming-Tsan Kao, Yi-Fang Lee, En-Feng Hsu, Meng-Huan Hsieh, Nien-Tse Chen
  • Patent number: 9508681
    Abstract: An apparatus is described that includes a first semiconductor chip having a first pixel array. The first pixel array has visible light sensitive pixels. The apparatus includes a second semiconductor chip having a second pixel array. The first semiconductor chip is stacked on the second semiconductor chip such that the second pixel array resides beneath the first pixel array. The second pixel array has IR light sensitive pixels for time-of-flight based depth detection.
    Type: Grant
    Filed: December 22, 2014
    Date of Patent: November 29, 2016
    Assignee: GOOGLE INC.
    Inventor: Chung Chun Wan
  • Patent number: 9500899
    Abstract: A transistor substrate may include a transistor. The transistor substrate may further include a set of color filters that has at least two different colors, overlaps the transistor, and defines a hole. The hole exposes a portion of the transistor.
    Type: Grant
    Filed: September 9, 2015
    Date of Patent: November 22, 2016
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventor: Yui-Ku Lee
  • Patent number: 9490403
    Abstract: Disclosed are a color converting element and a method for manufacturing the color converting element. The disclosed color converting element includes: first wavelength conversion cells spaced apart from one another; and second wavelength conversion cells arranged among the first wavelength conversion cells. The first and second wavelength conversion cells are made of a material containing glass. The color converting element of the disclosed technology is configured in that color converting cells having different color converting characteristics are periodically arranged, when the color converting element is applied to a color converting glass material which may improve thermal and chemical durability of white LEDs, thus minimizing the degradation of efficiency or luminance caused by an interaction between color converting phosphors or active ions and allowing for ease of adjustment of color rendering index.
    Type: Grant
    Filed: March 23, 2015
    Date of Patent: November 8, 2016
    Inventors: Woon Jin Chung, Ka Ram Han, Yi Kwon Lee
  • Patent number: 9477319
    Abstract: The amount of power and processing needed to process gesture input for a computing device can be reduced by utilizing a separate gesture sensor. The gesture sensor can have a form factor similar to that of conventional cameras to reduce costs by being able to utilize readily available low cost parts, but can have a lower resolution and adjustable virtual shutter such that fast motions can be captured and/or recognized by the device. In some devices, a subset of the pixels of the gesture sensor can be used as a motion detector, enabling the gesture sensor to run in a low power state unless there is likely gesture input to process. Further, at least some of the processing and circuitry can be included with the gesture sensor such that various functionality can be performed without accessing a central processor or system bus, thus further reducing power consumption.
    Type: Grant
    Filed: November 2, 2015
    Date of Patent: October 25, 2016
    Assignee: Amazon Technologies, Inc.
    Inventors: Leo B. Baldwin, Isaac S. Noble
  • Patent number: 9472588
    Abstract: A structure includes a silicon substrate; silicon readout circuitry disposed on a first portion of a top surface of the substrate and a radiation detecting pixel disposed on a second portion of the top surface of the substrate. The pixel has a plurality of radiation detectors connected with the readout circuitry. The plurality of radiation detectors are composed of at least one visible wavelength radiation detector containing germanium and at least one infrared wavelength radiation detector containing a Group III-V semiconductor material. A method includes providing a silicon substrate; forming silicon readout circuitry on a first portion of a top surface of the substrate and forming a radiation detecting pixel, on a second portion of the top surface of the substrate, that has a plurality of radiation detectors formed to contain a visible wavelength detector composed of germanium and an infrared wavelength detector composed of a Group III-V semiconductor material.
    Type: Grant
    Filed: June 19, 2015
    Date of Patent: October 18, 2016
    Assignee: International Business Machines Corporation
    Inventors: Ning Li, Devendra K. Sadana, Robert L. Wisnieff
  • Patent number: 9443891
    Abstract: A ranging pixel located in a peripheral region of a solid-state image sensor includes a microlens having a center axis that is shifted relative to a center axis of the ranging pixel, a first photoelectric conversion unit, and a second photoelectric conversion unit. The first photoelectric conversion unit is disposed on a side of the center axis of the ranging pixel that is in a direction opposite to a direction (projection shift direction) obtained by projecting a shift direction of the microlens onto a straight line connecting a center of the first photoelectric conversion unit and a center of the second photoelectric conversion unit, and the second photoelectric conversion unit is disposed on another side of the center axis of the ranging pixel that is in a direction identical to the projection shift direction of the microlens. In addition, the area of the first photoelectric conversion unit is greater than the area of the second photoelectric conversion unit.
    Type: Grant
    Filed: February 10, 2015
    Date of Patent: September 13, 2016
    Assignee: Canon Kabushiki Kaisha
    Inventor: Aihiko Numata
  • Patent number: 9404796
    Abstract: An optical sensor arrangement includes two sensors arranged one behind the other. The operational spectral ranges of the sensors match, and the first sensor forms an attenuation filter for the second sensor, which is arranged behind the first sensor.
    Type: Grant
    Filed: March 22, 2013
    Date of Patent: August 2, 2016
    Assignee: Airbus Defence and Space GmbH
    Inventors: Jochen Barth, Thomas Roth, Christian Czeslik
  • Patent number: 9312300
    Abstract: A solid-state imaging device includes an Si substrate in which a photoelectric conversion unit that photoelectrically converts visible light incident from a back surface side is formed, and a lower substrate provided under the Si substrate and configured to photoelectrically convert infrared light incident from the back surface side.
    Type: Grant
    Filed: October 27, 2014
    Date of Patent: April 12, 2016
    Assignee: Sony Corporation
    Inventors: Keiji Mabuchi, Hideshi Abe, Hideo Kanbe, Shiro Uchida
  • Patent number: 9297939
    Abstract: Spectral filtering device including a dielectric substrate, a first filter capable of acting as a passband filter in the visible range and having a plurality of first nanostructures with a uniform spacing between each other. Each nanostructure has a portion of dielectric material arranged between two portions of metallic material such that one of the two portions of metallic material is arranged between the substrate and the portion of dielectric material. A second filter capable of acting as a passband filter in the infrared range is also included having a plurality of second nanostructures with a uniform spacing between each other and each comprising a portion of dielectric material of which only one face is in contact with a portion of metallic material.
    Type: Grant
    Filed: July 25, 2013
    Date of Patent: March 29, 2016
    Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
    Inventors: Ujwol Palanchoke, Salim Boutami, Jerome Hazart
  • Patent number: 9287301
    Abstract: A solid-state image sensing device has a plurality of detection units periodically arranged as a two-dimensional array on a substrate. Each of the detection units includes a visible light detector and an infrared light detector arranged on the same optical axis in a vertical direction so that the visible light detector and the infrared light detector overlap with each other. Each of the detection units also includes a signal readout circuit provided in the substrate so as to output signals of the visible light detector and the infrared light detector as time-series signals.
    Type: Grant
    Filed: March 11, 2013
    Date of Patent: March 15, 2016
    Assignee: NEC CORPORATION
    Inventor: Shigeru Tohyama
  • Patent number: 9252178
    Abstract: Provided is a pixel of a multi-stacked complementary metal-oxide semiconductor (CMOS) image sensor and a method of manufacturing the image sensor including a light-receiving unit that may include first through third photodiode layers that are sequentially stacked, an integrated circuit (IC) that is formed below the light-receiving unit, electrode layers that are formed on and below each of the first through third photodiode layers, and a contact plug that connects the electrode layer formed below each of the first through third photodiode layers with a transistor of the IC.
    Type: Grant
    Filed: August 8, 2011
    Date of Patent: February 2, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyung-bae Park, Kyu-sik Kim, Yong-wan Jin, Woong Choi, Kwang-hee Lee, Do-hwan Kim
  • Patent number: 9209346
    Abstract: A radiation detector is provided that includes a photodiode having a radiation absorber with a graded multilayer structure. Each layer of the absorber is formed from a semiconductor material, such as HgCdTe. A first of the layers is formed to have a first predetermined wavelength cutoff. A second of the layers is disposed over the first layer and beneath the first surface of the absorber through which radiation is received. The second layer has a graded composition structure of the semiconductor material such that the wavelength cutoff of the second layer varies from a second predetermined wavelength cutoff to the first predetermined wavelength cutoff such that the second layer has a progressively smaller bandgap than the first bandgap of the first layer. The graded multilayer radiation absorber structure enables carriers to flow toward a conductor that is used for measuring the radiation being sensed by the radiation absorber.
    Type: Grant
    Filed: May 23, 2014
    Date of Patent: December 8, 2015
    Assignee: DRS Network & Imaging Systems, LLC
    Inventors: Pradip Mitra, Jeffrey D. Beck, Mark R. Skokan
  • Patent number: 9176608
    Abstract: The amount of power and processing needed to process gesture input for a computing device can be reduced by utilizing a separate gesture sensor. The gesture sensor can have a form factor similar to that of conventional camera elements, in order to reduce costs by being able to utilize readily available low cost parts, but can have a lower resolution and adjustable virtual shutter such that fast motions can be captured and/or recognized by the device. In some devices, a subset of the pixels of the gesture sensor can be used as a motion detector, enabling the gesture sensor to run in a low power state unless there is likely gesture input to process. Further, at least some of the processing and circuitry can be included with the gesture sensor such that various functionality can be performed without accessing a central processor or system bus, thus further reducing power consumption.
    Type: Grant
    Filed: June 27, 2011
    Date of Patent: November 3, 2015
    Assignee: Amazon Technologies, Inc.
    Inventors: Leo B. Baldwin, Isaac S. Noble
  • Patent number: 9165967
    Abstract: A semiconducting structure configured to receive electromagnetic radiation and transform the received electromagnetic radiation into an electric signal, the semiconductor structure including a semiconducting support within a first surface defining a longitudinal plane, a first zone with a first type of conductivity formed in the support with a second zone with a second type of conductivity that is opposite of the first type of conductivity to form a semiconducting junction. A mechanism limiting lateral current includes a third zone formed in the support in lateral contact with the second zone, the third zone having the second type of conductivity for which majority carriers are electrons. The third zone has a sufficient concentration of majority carriers to have an increase in an apparent gap due to a Moss-Burstein effect.
    Type: Grant
    Filed: November 27, 2012
    Date of Patent: October 20, 2015
    Assignee: Commissariat á l'énergies atomique et aux énergies alternatives
    Inventors: Olivier Gravrand, Gerard Destefanis
  • Patent number: 9129880
    Abstract: An imaging device includes: a plurality of first absorption layers that absorb an infrared ray with a given wavelength range, and generate pixel signals of a plurality of pixels, respectively; at least one second absorption layer that absorbs an infrared ray with a wavelength range which is different from the given wavelength range of the first absorption layers, and generates a pixel signal common to the pixels; a plurality of first electrodes that take out the pixel signals from the first absorption layers, respectively; and a second electrode that takes out the pixel signal from the at least one second absorption layer.
    Type: Grant
    Filed: December 19, 2013
    Date of Patent: September 8, 2015
    Assignee: FUJITSU LIMITED
    Inventor: Kazuo Ozaki
  • Patent number: 9099366
    Abstract: A photosite is formed in a semiconductor substrate and includes a photodiode confined in a direction orthogonal to the surface of the substrate. The photodiode includes a semiconductor zone for storing charge that is formed in an upper semiconductor region having a first conductivity type and includes a main well of a second conductivity type opposite the first conductivity type and laterally pinned in a first direction parallel to the surface of the substrate. The photodiode further includes an additional semiconductor zone including an additional well having the second conductivity type that is buried under and makes contact with the main well.
    Type: Grant
    Filed: June 21, 2012
    Date of Patent: August 4, 2015
    Assignees: STMicroelectronics SA, STMicroelectronics (Crolles 2) SAS
    Inventors: Francois Roy, Julien Michelot