Abstract: An image sensor may include a semiconductor substrate, a plurality of light receiving devices formed within the semiconductor substrate, and a plurality of device isolation films for isolating the light receiving devices from each other. When an arrangement direction of a pixel array may be formed by arranging the light receiving devices is a horizontal direction, the pixel array may be formed by alternately arranging a first type light receiving device and a second type light receiving device having different horizontal lengths.

Abstract: A method of manufacturing an image pickup device includes a step of forming a filling member such that the filling member covers a light guiding part and a peripheral part provided in a film. The light guiding part is positioned on an image pickup region of the image pickup device and has openings that correspond to respective photoelectric conversion portions. The peripheral part is positioned on a peripheral region of the image pickup device. The filling member fills in the openings. The method includes a step of processing the filling member. The method includes a step of forming light guiding members, which is performed after the step of processing filling member has been performed, by a polishing process performed on the filling member so that the light guiding part is exposed. The light guiding members are part of the filling member and disposed in the openings.

Abstract: An electronic device and a method of fabricating the same are provided. The electronic device includes: a photodiode layer; a wiring layer formed on the first surface of the photodiode layer; a plurality of electrical contact pads formed on the wiring layer; a passivation layer formed on the wiring layer and the electrical contact pads; an antireflective layer formed on the second surface of the photodiode layer; a color filter layer formed on the antireflective layer; a dielectric layer formed on the antireflective layer and the color filter layer; and a microlens layer formed on the dielectric layer, allowing the color filter layer, the dielectric layer and the microlens layer to define an active region within which the electrical contact pads are positioned. As the electrical contact pads are positioned within the active region, an area of the substrate used for an inactive region can be eliminated.

Abstract: A solid-state imaging device includes: pixels each including a hybrid photoelectric conversion portion and pixel transistors, wherein the hybrid photoelectric conversion portion includes a semiconductor layer having a p-n junction, a plurality of columnar or cylindrical hollow-shaped organic material layers disposed in the semiconductor layer, and a pair of electrodes disposed above and below the semiconductor layer and the organic material layers, wherein charges generated in the organic material layers through photoelectric conversion move inside the semiconductor layer so as to be guided to a charge accumulation region, and wherein the solid-state imaging device is configured as a back-illuminated type in which light is incident from a surface opposite to the surface on which the pixel transistors are formed.

Abstract: An integrated device, the device including a first crystalline layer covered by an oxide layer, a second crystalline layer overlying the oxide layer, wherein the first and second crystalline layers are image sensor layers, and the device includes a third crystalline layer, wherein the third crystalline layer includes single crystal transistors.

Abstract: A dichromatic photodiode and method for dichromatic photodetection are disclosed. A wide bandgap junction comprises a lattice matched junction operable to detect a first light spectrum. A narrow bandgap junction is coupled to the wide bandgap junction, and comprises a photodiode structure. The narrow bandgap junction is operable to detect a second light spectrum.

Abstract: An image sensor having a wave guide includes a semiconductor substrate formed with a photodiode and a peripheral circuit region; an anti-reflective layer formed on the semiconductor substrate; an insulation layer formed on the anti-reflective layer; a wiring layer formed on the insulation layer and connected to the semiconductor substrate; at least one interlayer dielectric stacked on the wiring layer; and a wave guide connected to the insulation layer by passing through the interlayer dielectric and the wiring layer which are formed over the photodiode.

Abstract: An apparatus includes a three dimensional array of light receptors disposed within a substrate having a light receiving surface, where light receptors disposed closer to the light receiving surface are responsive to light having shorter wavelengths than light receptors disposed further from the light receiving surface, and where each light receptor is configured to output a binary value and to change state between an off-state and an on-state by the absorption of at least one photon.

Abstract: A photoelectric conversion device includes an organic photoelectric conversion layer, and suppresses sensitivity degradation caused by the light irradiation. A photoelectric conversion device 100 is formed by stacking a first electrode layer 104, a photoelectric conversion layer 15 including an organic material, and a second electrode layer 108 on a substrate 101, in which the photoelectric conversion layer 15 has a bulk hetero structure of a P-type organic semiconductor and an N-type organic semiconductor, and a difference between an ionization potential of the P-type organic semiconductor and an apparent ionization potential of the bulk hetero structure is 0.50 eV or less. Accordingly, it is possible to suppress sensitivity degradation caused by the light irradiation.

Abstract: The inventive concept provides image sensors and methods of forming the same. In the image sensor, a surface trap region may be disposed to be adjacent to a surface of a substrate lens component. Thus, a dark current characteristic may be improved.

Abstract: A solid-state imaging device including a plurality of pixels arranged two-dimensionally, wherein each of the pixels has at least a planarizing film formed on the upper side of a photoelectric conversion element, a filter formed on the upper side of the planarizing film, and a microlens formed on the upper side of the filter. The filter of some of the pixels is a color filter permitting transmission therethrough of light of a predetermined color component, whereas the filter of other pixels is a white filter permitting transmission therethrough of light in the whole visible spectral range. The refractive indices of the white filter, the microlens and the planarizing film have the following relationship: (Refractive index of white filter)?(Refractive index of microlens)>(Refractive index of planarizing film).

Abstract: Light sensor devices are described that have a glass substrate, which includes a lens to focus light over a wide variety of angles, bonded to the light sensor device. In one or more implementations, the light sensor devices include a substrate having a photodetector formed therein. The photodetector is capable of detecting light and providing a signal in response thereto. The sensors also include one or more color filters disposed over the photodetector. The color filters are configured to pass light in a limited spectrum of wavelengths to the photodetector. A glass substrate is disposed over the substrate and includes a lens that is configured to collimate light incident on the lens and to pass the collimated light to the color filter.

Abstract: A pair of first gate electrodes IGR, IGL are provided on a semiconductor substrate 100 so that potentials ?TX1, ?TX2 between a light-sensitive area SA and a pair of first accumulation regions AR, AL alternately ramp. A pair of second gate electrodes IGR, IGL are provided on the semiconductor substrate 100 so as to control the height of first potential barriers ?BG each interposed between the first accumulation region AR, AL and a second accumulation region FDR, FDL, and increase the height of the first potential barrier ?BG to carriers as a higher output of a background light is detected by a photodetector.

Abstract: “An imaging device formed as an active pixel array combining a CMOS fabrication process and a nanowire fabrication process. The pixels in the array may include a single or multiple photogates surrounding the nanowire. The photogates control the potential profile in the nanowire, allowing accumulation of photo-generated charges in the nanowire and transfer of the charges for signal readout. Each pixel may include a readout circuit which may include a reset transistor, charge transfer switch transistor, source follower amplifier, and pixel select transistor. A nanowire is generally structured as a vertical rod on the bulk semiconductor substrate to receive light energy impinging onto the tip of the nanowire. The nanowire may be configured to function as either a photodetector or a waveguide configured to guild the light to the substrate. Light of different wavelengths can be detected using the imaging device.

Abstract: The present invention relates to efficient organic light emitting devices (OLEDs). The devices employ three emissive sub-elements, typically emitting red, green and blue, to sufficiently cover the visible spectrum. Thus, the devices may be white-emitting OLEDs, or WOLEDs. Each sub-element comprises at least one organic layer which is an emissive layer—i.e., the layer is capable of emitting light when a voltage is applied across the stacked device. The sub-elements are vertically stacked and are separated by charge generating layers. The charge-generating layers are layers that inject charge carriers into the adjacent layer(s) but do not have a direct external connection.

Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.

Abstract: A bispectral detector comprising upper and lower semiconductor layers of a first conductivity type in order to absorb a first and a second electromagnetic spectrum, separated by an intermediate layer that forms a barrier; semiconductor zones of a second conductivity type implanted in upper layer and lower layer and each implanted at least partially in the bottom of an opening that passes through upper layer and intermediate layer; and conductor elements connected to semiconductor zones. At least that part of each opening that passes through upper layer is separated from the latter by a semiconductor cap layer: whereof the concentration of dopants of the second conductivity type is greater than 1017 cm?3; and whereof the thickness is chosen as a function of said concentration so that it exceeds the minority carrier diffusion length in the cap layer.

Abstract: A component including a substrate, at least one layer including a color conversion material including quantum dots disposed over the substrate, and a layer including a conductive material (e.g., indium-tin-oxide) disposed over the at least one layer. (Embodiments of such component are also referred to herein as a QD light-enhancement substrate (QD-LES).) In certain preferred embodiments, the substrate is transparent to light, for example, visible light, ultraviolet light, and/or infrared radiation. In certain embodiments, the substrate is flexible. In certain embodiments, the substrate includes an outcoupling element (e.g., a microlens array). A film including a color conversion material including quantum dots and a conductive material is also provided. In certain embodiments, a component includes a film described herein. Lighting devices are also provided. In certain embodiments, a lighting device includes a film described herein.

Abstract: A method of fabricating a photodiode array having different photodiode structures includes providing a semiconductor substrate having first and second diode areas including a bottom substrate portion doped with a first doping type, an intrinsic layer, and a top silicon layer doped with a second doping type. The second diode areas are implanted with the second doping type. A dopant concentration in the surface of the second diode areas is at least three times higher than in the first diode areas. The top silicon layer is thermally oxidized to form a thermal silicon oxide layer to provide a bottom Anti-Reflective Coating (ARC) layer. The second diode areas grow thermal silicon oxide thicker as compared to the first diode areas. A top ARC layer is deposited on the bottom ARC layer. First PDs are provided in the first diode areas and second PDs provided in the second diode areas.

Abstract: An imager may include depth sensing pixels that provide an asymmetrical angular response to incident light. The depth sensing pixels may each include a substrate region formed from a photosensitive portion and a non-photosensitive portion. The depth sensing pixels may include mechanisms that prevent regions of the substrate from receiving incident light. Depth sensing pixel pairs may be formed from depth sensing pixels that have different asymmetrical angular responses. Each of the depth sensing pixel pairs may effectively divide the corresponding imaging lens into separate portions. Depth information for each depth sensing pixel pair may be determined based on the difference between output signals of the depth sensing pixels of that depth sensing pixel pair. The imager may be formed from various combinations of depth sensing pixel pairs and color sensing pixel pairs arranged in a Bayer pattern or other desired patterns.

Abstract: A semiconductor device contains a photodiode which has a plurality of p-n junctions disposed in a stack. Two contact structures on the semiconductor device are connected across at least one of the junctions to allow electrical connection to an external detection circuit, so that signal current from incident light on the photodiode which generates electron-hole pairs across the connected junction may be sensed by the external detection circuit. At least one of the junctions is electrically shorted at the semiconductor device, so that signal current from the shorted junction may not be sensed by the external detection circuit.

Abstract: A solid-state imaging device includes a photoelectric conversion portion, a charge-receiving portion to which charges are transferred from the photoelectric conversion portion, and a light control film having a reverse tapered opening over the photoelectric conversion portion to reduce the intensity of diffracted light diffusing to regions other than the photoelectric conversion portion.

Abstract: A flat panel display includes; a first substrate, a white reflective layer disposed on the first substrate, a pixel electrode disposed on the white reflective, a second substrate disposed facing the first substrate, a common electrode disposed on the second substrate, and an electrooptic layer disposed between the pixel electrode and the common electrode, wherein the white reflective layer includes at least one of TiO2 and BaSO4.

Abstract: An image sensor for a semiconductor light-sensitive device including a semiconductor substrate and a light receiving device configured to receive light and generate a signal from the light. The image sensor may include an electron collecting device formed in the semiconductor substrate to receive at least a portion of the electrons generated by the light in the light receiving device. The image sensor may include a first type device isolation film configured to isolate the light receiving device from the electron collecting device. The image sensor may include a shielding film formed over the semiconductor substrate and configured to shield the first electron collecting device from the light.

Abstract: A solid-state image capture device includes photoelectric conversion elements that perform photoelectric conversion on incident light to obtain signal charges, color filter portions provided at light incident sides of the corresponding photoelectric conversion elements, and an organic photoelectric conversion layer provided at light incident sides of the color filter portions. The organic photoelectric conversion layer contains a pigment that is absorptive of near infrared light.

Abstract: A first exemplary device has a substrate, a nanowire and a doped epitaxial layer surrounding the nanowire. The nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength. The first exemplary device may further have an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire. A second exemplary device has a substrate, a nanowire and one or more photogates surrounding the nanowire. The nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength. The second exemplary device may have an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire. The one or more photogates comprise an epitaxial layer.

Abstract: A method for manufacturing a solid state image forming device in one embodiment includes forming a transparent resin layer on a semiconductor substrate having a plurality of photodiode layers formed thereon in a lattice, through R, G, and B color filters that are formed according to a Bayer arrangement; forming a plurality of first microlens mother dies on the transparent resin layer at the positions corresponding to the G color filters in such a manner that the outer peripheries thereof are separated from each other; forming a plurality of second microlens mother dies in such a manner that they are formed to fill the gap between the first microlens mother dies and the outer peripheries thereof are separated from each other; and etching the transparent resin layer with the plurality of first microlens mother dies and the plurality of second microlens mother dies being used as masks.

Abstract: CMOS pixel sensors with multiple pixel sizes and methods of manufacturing the CMOS pixel sensors with implant dose control are provided. The method includes forming a plurality of pixel sensors in a same substrate and forming a masking pattern over at least one of the plurality of pixel sensors that has a pixel size larger than a non-masked pixel sensor of the plurality of pixel sensors. The method further includes providing a single dosage implant to the plurality of pixel sensors. The at least one of the plurality of pixel sensors with the masking pattern receives a lower dosage than the non-masked pixel sensor.

Abstract: A light-sensing pixel for detecting at least a portion of the electromagnetic spectrum includes a first detector element having a micro-structured surface for detecting an infrared range of wavelengths of the electromagnetic spectrum. The light-sensing pixel further includes a second detector element for detecting a second range of wavelengths of the electromagnetic spectrum, wherein the second range of wavelengths is shorter than the first range of wavelengths and the first and second detector element are formed monolithically on a silicon substrate.

Abstract: An image sensor and a method of manufacturing the same. The image sensor includes a plurality of photoelectric conversion units that are horizontally arranged and selectively emit electric signals by absorbing color beams.

Abstract: Example embodiments are directed to a stack-type image sensor including resistance change elements. The stack-type image sensor includes at least two light-sensing layers that detect different color light stacked on different layers. The stack-type image sensor may not require a size of a unit pixel that detects a light color to be less than 1 ?m in order to generate a high resolution color image. As such, resolution saturation may be avoided.

Abstract: A solid-state imaging device includes semiconductor substrate; a plurality of photoelectric conversion sections of n-type that are formed at an upper part of semiconductor substrate and arranged in a matrix; output circuit that is formed on a charge detection surface that is one surface of semiconductor substrate and detects charges stored in photoelectric conversion sections; a plurality of isolating diffusion layers of a p-type that are formed under output circuit and include high concentration p-type layers adjacent to respective photoelectric conversion sections; and color filters formed on a light incident surface that is the other surface opposing the one surface of semiconductor substrate and transmit light with different wavelengths. Shapes of respective photoelectric conversion sections correspond to color filters and differ depending on the high concentration p-type layer configuring isolating diffusion layer.

Abstract: A photodetector with a bandwidth-tuned cell structure is provided. The photodetector is fabricated from a semiconductor substrate that is heavily doped with a first dopant. A plurality of adjoining cavities is formed in the semiconductor substrate having shared cell walls. A semiconductor well is formed in each cavity, moderately doped with a second dopant opposite in polarity to the first dopant. A layer of oxide is grown overlying the semiconductor wells and an annealing process is performed. Then, metal pillars are formed that extend into each semiconductor well having a central axis aligned with an optical path. A first electrode is connected to the metal pillar of each cell, and a second electrode connected to the semiconductor substrate. The capacitance between the first and second electrodes decreases in response to forming an increased number of semiconductor wells with a reduced diameter, and forming metal pillars with a reduced diameter.

Abstract: The invention provides a polymerizable composition including an oxime ester photopolymerization initiator, an organic acid anhydride having a molecular weight of 300 or less, and a polymerizable compound.

Abstract: A solid-state imaging device and a method for manufacturing the same are provided. The solid-state imaging device includes a structure that provides a high sensitivity and high resolution without variations in spectral sensitivity and without halation of colors, and prevents light from penetrating into an adjacent pixel portion. A plurality of photodiodes are formed inside a semiconductor substrate. A wiring layer includes a laminated structure of an insulating film and a wire and is formed on the semiconductor substrate. A plurality of color filters are formed individually in a manner corresponding to the plurality of photodiodes above the wiring layer. A planarized film and a microlens are sequentially laminated on each of the color filters. In the solid-state imaging device, each of the color filters has an refraction index higher than that of the planarized film and has, in a Z-axis direction, an upper surface in a concave shape.

Abstract: A unit cell for use in an imaging system may include an absorber layer of semiconductor material formed on a semiconductor substrate, at least one contact including semiconductor material formed on the semiconductor substrate and electrically coupled to the absorber layer, and a cap layer of semiconductor material formed on the semiconductor substrate and electrically coupled to and formed between the absorber layer and the at least one contact. The absorber layer may be configured to absorb incident photons such that the absorbed photons excite electrons in the absorber layer to generate a photocurrent. The at least one contact may be configured to conduct the photocurrent to one or more electrical components external to the unit cell. The cap layer may be configured to conduct the photocurrent between the absorber layer and the at least one contact.

Abstract: A solid-state image device includes a silicon substrate, and a photoelectric conversion layer arranged on the silicon substrate and lattice-matched to the silicon substrate, the photoelectric conversion layer being composed of a chalcopyrite-based compound semiconductor of a copper-aluminum-gallium-indium-sulfur-selenium-based mixed crystal or a copper-aluminum-gallium-indium-zinc-sulfur-selenium-based mixed crystal.

Abstract: A polymerizable composition for a color filter, including (A) a polymerizable compound, (B) a polymerization initiator, (C) a coloring agent, and (D) a polymer including at least a group having polymerization inhibiting ability and a group having surface localizability.

Abstract: Impinging electromagnetic radiation generates pairs of majority and minority carriers in a substrate. A spectrometer device for detection of electromagnetic radiation impinging on a substrate comprises means for generating, in the substrate, a majority carrier current; at least one detection region for collecting generated minority carriers, the minority carriers being directed under influence of the majority carrier current; and means for determining spectral information based on minority carriers collected at the at least one detection region.

Abstract: Nanostructure array optoelectronic devices are disclosed. The optoelectronic device may have one or more intermediate electrical contacts that are physically and electrically connected to sidewalls of the array of nanostructures. The contacts may allow different photo-active regions of the optoelectronic device to be independently controlled. For example, one color light may be emitted or detected independently of another using the same group of one or more nanostructures. The optoelectronic device may be a pixilated device that may serve as an LED display or imaging sensor. The pixilated device may have an array of nanostructures with alternating rows and columns of sidewall electrical contacts at different layers. A pixel may be formed at the intersection of a row contact and a column contact. As one example, a single group of one or more nanostructures has a blue sub-pixel, a green sub-pixel, and a red sub-pixel.

Abstract: A radiation receiver has a semiconductor body including a first active region and a second active region, which are provided in each case for detecting radiation. The first active region and the second active region are spaced vertically from one another. A tunnel region is arranged between the first active region and the second active region. The tunnel region is connected electrically conductively with a land, which is provided between the first active region and the second active region for external electrical contacting of the semiconductor body. A method of producing a radiation receiver is additionally indicated.

Abstract: A unit pixel of an image sensor and a photo detector are disclosed. The photo detector of the present invention can include: a light-absorbing part configured to absorb light by being formed in a floated structure; an oxide film having one surface thereof being in contact with the light-absorbing part; a source being in contact with one side of the other surface of the oxide film and separated from the light-absorbing part with the oxide film therebetween; a drain facing the source so as to be in contact with the other side of the other surface of the oxide film and separated from the light-absorbing part with the oxide film therebetween; and a channel formed between the source and the drain and configured to form flow of an electric current between the source and drain.

Abstract: A solid-state imaging device is provided with a pixel region in which a plurality of pixels including photoelectric conversion films are arrayed and pixel isolation portions are interposed between the plurality of pixels, wherein the photoelectric conversion film is a chalcopyrite-structure compound semiconductor composed of a copper-aluminum-gallium-indium-sulfur-selenium based mixed crystal or a copper-aluminum-gallium-indium-zinc-sulfur-selenium based mixed crystal and is disposed on a silicon substrate in such a way as to lattice-match the silicon substrate concerned, and the pixel isolation portion is formed from a compound semiconductor subjected to doping concentration control or composition control in such a way as to become a potential barrier between the photoelectric conversion films disposed in accordance with the plurality of pixels.

Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.

Abstract: Apparatuses and systems for photon detection can include a first optical sensing structure structured to absorb light at a first optical wavelength; and a second optical sensing structure engaged with the first optical sensing structure to allow optical communication between the first and the second optical sensing structures. The second optical sensing structure can be structured to absorb light at a second optical wavelength longer than the first optical wavelength and to emit light at the first optical wavelength which is absorbed by the first optical sensing structure. Apparatuses and systems can include a bandgap grading region.

Abstract: The present invention provides a colored curable composition including a phthalocyanine pigment, a dioxazine pigment, a dye, a polymerization initiator, a polymerizable compound and a solvent; and a colored curable composition including a phthalocyanine pigment, a dye multimer having a polymerizable group and a group derived from a dipyrromethene dye, a polymerization initiator, a polymerizable compound and a solvent.

Abstract: This photodiode array module includes a first semiconductor substrate 2 having a first photodiode array that is sensitive to light of a first wavelength band, a second semiconductor substrate 2? having a second photodiode array that is sensitive to light of a second wavelength band, and a third semiconductor substrate 3 which is formed with a plurality of amplifiers AMP and on which the first and second semiconductor substrates 2, 2? are placed side by side without overlapping, and which connects each photodiode to the amplifier AMP via a bump. In adjacent end portions of the first semiconductor substrate 2 and the second semiconductor substrate 2?, stepped portions are formed, which thus allows performing measurement with low noise even when respective pixels are aligned successively over both substrates.

Abstract: A method includes performing a grinding on a backside of a semiconductor substrate. An image sensor is disposed on a front side of the semiconductor substrate. An impurity is doped into a surface layer of the backside of the semiconductor substrate to form a doped layer. A multi-cycle laser anneal is performed on the doped layer.

Abstract: A backside illuminated image sensor comprises a photodiode and a first transistor located in a first chip, wherein the first transistor is electrically coupled to the photodiode. The backside illuminated image sensor further comprises a second transistor formed in a second chip and a plurality of logic circuits formed in a third chip, wherein the second chip is stacked on the first chip and the third chip is stacked on the second chip. The logic circuit, the second transistor and the first transistor are coupled to each other through a plurality of boding pads and through vias.

Abstract: A solid-state image sensor including a wiring portion which includes a first line, a second line and a control line, in first to third regions arranged sequentially, wherein the first line includes a first pattern in a first layer in the first and second regions and a second pattern in a second layer in the third region, and these patterns are connected each other between the second region and the third region, the second line includes a third pattern in the second layer in the first region and a fourth pattern in the first layer in the second and third regions, the these patterns are connected each other between the first region and the second region, and the control line includes a pattern in the second layer in the second region, intersecting with the first pattern and the fourth pattern.