Responsive To Light Having Lower Energy (i.e., Longer Wavelength) Than Forbidden Band Gap Energy Of Semiconductor (e.g., By Excitation Of Carriers From Metal Into Semiconductor) Patents (Class 257/451)
  • Patent number: 9634158
    Abstract: The present technology relates to a semiconductor device and electronic equipment in which a semiconductor device that suppresses the occurrence of noise by a leakage of light can be provided. A semiconductor device is configured which includes a light-receiving element 34, an active element for signal processing, and a light shielding structure 40 which is between the light-receiving element 34 and the active element to cover the active element and is formed of wirings 45 and 46. The semiconductor device further includes a first substrate on which the light-receiving element is formed, a second substrate on which the active element is formed, and a wiring layer which has a light shielding structure by the wirings which is formed on the second substrate, and in which the second substrate can be bonded to the first substrate through the wiring layer.
    Type: Grant
    Filed: January 25, 2013
    Date of Patent: April 25, 2017
    Assignee: Sony Corporation
    Inventors: Shoji Kobayashi, Yoshiharu Kudoh, Takuya Sano
  • Patent number: 9209329
    Abstract: A cell for a silicon based photoelectric multiplier may comprise a substrate of a second conductivity type, a first layer of a first conductivity type, and/or a second layer of the second conductivity type formed on the first layer. The first layer and the second layer may form a first p-n junction, and the substrate may be configured such that in operation of the photoelectric multiplier from a quantity of light propagating towards a back side or side walls of the photoelectric multiplier, a negligible portion returns to a front side of the photoelectric multiplier.
    Type: Grant
    Filed: June 21, 2013
    Date of Patent: December 8, 2015
    Assignee: MAX-PLANCK-GESELLSCHAFT ZUR FOERDERUNG DER WISSENSCHAFTEN E.V.
    Inventors: Masahiro Teshima, Razmik Mirzoyan, Boris Anatolievich Dolgoshein, Pavel Zhorzhevich Buzhan, Alexey Anatolievich Stifutkin
  • Patent number: 9105788
    Abstract: A cell for a silicon-based photoelectric multiplier may comprise a first layer of a first conductivity type and a second layer of a second conductivity type formed on the first layer. The first layer and the second layer may form a first p-n junction. The cell may be processed by an ion implantation act wherein parameters of the ion implantation are selected such that due to an implantation-induced damage of the crystal lattice, an absorption length of infrared light of a wavelength in a range of ˜800 nm to 1000 nm is decreased.
    Type: Grant
    Filed: October 23, 2012
    Date of Patent: August 11, 2015
    Assignee: MAX-PLANCK-GESELLSCHAFT ZUR FOERDERUNG DER WISSENSCHAFTEN E.V.
    Inventors: Masahiro Teshima, Razmick Mirzoyan, Boris Anatolievich Dolgoshein
  • Patent number: 8916877
    Abstract: A thin film transistor (TFT) comprises: an active layer formed on a substrate; a gate insulating layer formed on the active layer; a gate electrode including a first gate region and a second gate region formed on portions of the gate insulating layer and spaced apart with a separation region interposed therebetween; an interlayer insulating layer formed on the gate insulating layer and the gate electrode, and having an opening formed to expose portions of the gate insulating layer and the gate electrode around the separation region; a gate connection electrode formed on the interlayer insulating layer and connected to the first gate region and the second gate region through the opening; and source and drain electrodes formed on the interlayer insulating layer. The TFT and the OLED display device have excellent driving margin without a spatial loss.
    Type: Grant
    Filed: August 22, 2012
    Date of Patent: December 23, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Yong-Ho Yang, Seung-Gyu Tae
  • Patent number: 8803188
    Abstract: One object is to provide a light-emitting element which overcomes the problems of electrical characteristics and a light reflectivity have been solved. The light-emitting element is manufactured by forming a first electrode including aluminum and nickel over a substrate; by forming a layer including a composite material in which a metal oxide is contained in an organic compound so as to be in contact with the first electrode after heat treatment is performed with respect to the first electrode; by forming a light-emitting layer over the layer including a composite material; and by forming a second electrode which has a light-transmitting property over the light-emitting layer. Further, the first electrode is preferably formed to include the nickel equal to or greater than 0.1 atomic % and equal to or less than 4.0 atomic %.
    Type: Grant
    Filed: March 21, 2013
    Date of Patent: August 12, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Nozomu Sugisawa, Toshiki Sasaki
  • Patent number: 8592933
    Abstract: A photoelectric conversion device has a high S/N ratio and can increase the detection efficiency even under a low luminance. The photoelectric conversion device generates an increased electric charge by impact ionization in a photoelectric conversion unit formed from a chalcopyrite type semiconductor, so as to improve dark current characteristic.
    Type: Grant
    Filed: March 30, 2009
    Date of Patent: November 26, 2013
    Assignees: Rohm Co., Ltd., National Institute of Advanced Industrial Science and Technology
    Inventors: Kenichi Miyazaki, Osamu Matsushima, Shigeru Niki, Keiichiro Sakurai, Shogo Ishizuka
  • Patent number: 8530995
    Abstract: A high operating temperature split-off band infrared (SPIP) detector having a double and/or graded barrier on either side of the emitter is provided. The photodetector may include a first and second barrier and an emitter disposed between the first and second barriers so as to form a heterojunction at each interface between the emitter and the first and second barriers, respectively. The emitter may be of a first semiconductor material having a split-off response to optical signals, while one of the first or the second barriers may include a double barrier having a light-hole energy band level that is aligned with the split-off band energy level of the emitter. In addition, the remaining barrier may be graded.
    Type: Grant
    Filed: February 3, 2010
    Date of Patent: September 10, 2013
    Assignee: Georgia State University Research Foundation, Inc.
    Inventors: A.G. Unil Perera, Steven G. Matsik
  • Patent number: 8362507
    Abstract: An optic assembly is provided. The assembly includes a housing having an upstream end and a downstream end. An LED is positioned in the upstream end of the housing. The LED is configured to generate excitation light therefrom. The excitation light has a first wavelength. An optic is positioned in the downstream end of the housing. The optic is positioned remotely from the LED so that a cavity is formed between the LED and the optic. The excitation light generated from the LED passes downstream through the cavity to the optic. Quantum dots are positioned on the optic. The excitation light excites the quantum dots so that the quantum dots produce emitted light having a second wavelength that is different than the first wavelength of the excitation light.
    Type: Grant
    Filed: November 1, 2010
    Date of Patent: January 29, 2013
    Assignee: Tyco Electronics Corporation
    Inventor: Ronald Martin Weber
  • Patent number: 8344398
    Abstract: A method of making a diode begins by depositing an AlxGa1-xN nucleation layer on a SiC substrate, then depositing an n+ GaN buffer layer, an n? GaN layer, an AlxGa1-xN barrier layer, and an SiO2 dielectric layer. A portion of the dielectric layer is removed and a Schottky metal deposited in the void. The dielectric layer is affixed to the support layer with a metal bonding layer using an Au—Sn utectic wafer bonding process, the substrate is removed using reactive ion etching to expose the n+ layer, selected portions of the n+, n?, and barrier layers are removed to form a mesa diode structure on the dielectric layer over the Schottky metal, and an ohmic contact is deposited on the n+ layer.
    Type: Grant
    Filed: October 15, 2010
    Date of Patent: January 1, 2013
    Assignee: Cree, Inc.
    Inventors: Primit Parikh, Sten Heikman
  • Patent number: 8072039
    Abstract: An energy conversion film and a quantum dot film which contain a quantum dot compound, an energy conversion layer including the quantum dot film, and a solar cell including the energy conversion layer. The films act as cut-off filters blocking light of a particular energy level using the light absorption and emission effects of quantum dots and can convert high energy light to low energy light. The efficiency of a solar cell may be improved by providing the cell with a film that converts light above the spectrum-responsive region to light in the cell's spectrum-responsive region. The absorption wavelength region of the films can be broadened by providing the quantum dot compound in a variety of average particle sizes, for example, by providing a mixture of a first quantum dot compound having a first average particle size and a first quantum dot compound having a second average particle size.
    Type: Grant
    Filed: July 26, 2010
    Date of Patent: December 6, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyung-sang Cho, Byung-ki Kim
  • Patent number: 8044419
    Abstract: Phosphor compositions, white phosphor compositions, methods of making white phosphor compositions, tinted white phosphor compositions, methods of making tinted white phosphor compositions, LEDs, methods of making LEDs, light bulb structures, paints including phosphor compositions, polymer compositions including phosphor compositions, ceramics including phosphor compositions, and the like are provided.
    Type: Grant
    Filed: May 21, 2007
    Date of Patent: October 25, 2011
    Assignee: University of Georgia Research Foundation, Inc.
    Inventors: William M. Yen, Zhiyi He, Sergei Basun, Xiao-jun Wang, Gennaro J. Gama
  • Patent number: 7868340
    Abstract: An optical device capable of generating warm light using an array of phosphor islands situated over a phosphor layer is disclosed. The device includes a solid state light emitter, a phosphor layer, and phosphor islands. The solid state light emitter, in an aspect, is a light emitting diode (“LED”) capable of converting electrical energy to optical light. The phosphor layer is disposed over the solid state light emitter for generating luminous cool light in response to the optical light. Multiple phosphor islands are disposed on the phosphor layer for converting cool light to warm light, wherein the phosphor islands are evenly distributed over the phosphor layer.
    Type: Grant
    Filed: May 30, 2008
    Date of Patent: January 11, 2011
    Assignee: Bridgelux, Inc.
    Inventors: Tao Xu, Rene Peter Helbing
  • Patent number: 7847326
    Abstract: A backside illuminated image sensor includes a photodiode, formed below the top surface of a semiconductor substrate, for receiving light illuminated from the backside of the semiconductor substrate to generate photoelectric charges, a reflecting gate, formed on the photodiode over the front upper surface of the semiconductor substrate, for reflecting light illuminated from the backside of the substrate and receiving a bias to control a depletion region of the photodiode, and a transfer gate for transferring photoelectric charges from the photodiode to a sensing node of a pixel.
    Type: Grant
    Filed: June 27, 2008
    Date of Patent: December 7, 2010
    Inventors: Sung-Hyung Park, Ju-Il Lee
  • Patent number: 7838876
    Abstract: An optoelectronic semiconductor chip comprises a radiation passage area (2d), to which is applied a current spreading layer (4) containing particles (4b) of a wavelength conversion material. Furthermore, a method for producing such a semiconductor chip and also a device comprising such a semiconductor chip are specified.
    Type: Grant
    Filed: September 26, 2006
    Date of Patent: November 23, 2010
    Assignee: Osram Opto Semiconductors GmbH
    Inventor: Norwin von Malm
  • Patent number: 7834367
    Abstract: A method of making a diode begins by depositing an AlxGa1?xN nucleation layer on a SiC substrate, then depositing an n+ GaN buffer layer, an n? GaN layer, an AlxGa1?xN barrier layer, and an SiO2 dielectric layer. A portion of the dielectric layer is removed and a Schottky metal deposited in the void. The dielectric layer is affixed to the support layer with a metal bonding layer using an Au-Sn utectic wafer bonding process, the substrate is removed using reactive ion etching to expose the n+ layer, selected portions of the n+, n?, and barrier layers are removed to form a mesa diode structure on the dielectric layer over the Schottky metal,; and an ohmic contact is deposited on the n+ layer.
    Type: Grant
    Filed: January 19, 2007
    Date of Patent: November 16, 2010
    Assignee: Cree, Inc.
    Inventors: Primit Parikh, Sten Heikman
  • Patent number: 7768032
    Abstract: A light-emitting device comprises first and second dot members. The first dot member is formed so that it makes contact with the second dot member. The first dot member comprises a plurality of first quantum dot layers. Each of the plurality of first quantum dot layers comprises a plurality of first quantum dots and a silicon dioxide film. The first quantum dot comprises an n-type silicon dot. The second dot member comprises a plurality of second quantum dot layers. Each of the plurality of second quantum dot layers comprises a plurality of second quantum dots and a silicon dioxide film. The second quantum dot comprises a p-type silicon dot.
    Type: Grant
    Filed: September 17, 2008
    Date of Patent: August 3, 2010
    Assignee: Hiroshima University
    Inventors: Katsunori Makihara, Seiichi Miyazaki, Seiichiro Higashi
  • Patent number: 7679662
    Abstract: Disclosed herein is a solid-state imaging element which includes a plurality of drive signal inputs, a plurality of bus lines, and a plurality of vertical transfer register electrodes. In the solid-state imaging element, a charge accumulated in light-receiving elements in a pixel region is vertically transferred by the drive signals input to the electrodes. Each of the electrodes has a contact part connected to the second contact and having a width smaller than a width of the electrodes in the pixel region, and a blank region is formed between predetermined adjacent two of the contact parts so that a width of the blank region is larger than a distance between respective two of the contact parts other than the predetermined adjacent two of the contact parts. The first contact is disposed on the blank region.
    Type: Grant
    Filed: November 9, 2006
    Date of Patent: March 16, 2010
    Assignee: Sony Corporation
    Inventors: Sadamu Suizu, Masaaki Takayama
  • Patent number: 7554170
    Abstract: A photosensor includes a plurality of photosensitive regions including a first photosensitive region connected to a first voltage reference, and at least one additional photosensitive region. A signal collector is connected to the first photosensitive region. At least one switching device is for switching the at least one additional photosensitive region between the first voltage reference and a second voltage reference that is less than the first voltage reference, and for reversibly connecting the at least one additional photosensitive region to the signal collector so that the photosensor is variably responsive to different light levels.
    Type: Grant
    Filed: May 17, 2007
    Date of Patent: June 30, 2009
    Assignee: STMicroelectronics (Research & Development) Limited
    Inventor: Jeffrey Raynor
  • Patent number: 7538404
    Abstract: An optical semiconductor device includes a first light receiving region and a second light receiving region provided on a substrate and the first and second light receiving regions include light receiving elements, respectively. A first anti-reflection film is formed in the first light receiving region of the substrate and a second anti-reflection film is formed in the second light receiving region of the substrate. The reflectance of the first anti-reflection film for a first wavelength range of light is lower than the reflectance of the second anti-reflection film for the first wavelength range of light and the reflectance of the second anti-reflection film for a second wavelength range of light which is different from the first wavelength range of light is lower than the reflectance of the first anti-reflection film for the second wavelength range of light.
    Type: Grant
    Filed: July 20, 2006
    Date of Patent: May 26, 2009
    Assignee: Panasonic Corporation
    Inventors: Tsutomu Miyajima, Takaki Iwai, Hisatada Yasukawa
  • Patent number: 7525131
    Abstract: Disclosed is a photoelectric surface including: a first group III nitride semiconductor layer that produces photoelectrons according to incidence of ultraviolet rays; and a second group III nitride semiconductor layer provided adjacent to the first group III nitride semiconductor layer and made of a thin-film crystal having c-axis orientation in a thickness direction, the second group III nitride semiconductor layer having an Al composition higher than that of the first group III nitride semiconductor layer.
    Type: Grant
    Filed: August 29, 2006
    Date of Patent: April 28, 2009
    Assignees: National University Corporation Shizuoka University, Hamamatsu Photonics K.K.
    Inventors: Masatomo Sumiya, Shunro Fuke, Tokuaki Nihashi, Minoru Hagino
  • Patent number: 7514721
    Abstract: A semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is attached to a compound substrate including a host which provides mechanical support to the device and a ceramic layer including a luminescent material. In some embodiments the compound substrate includes a crystalline seed layer on which the semiconductor structure is grown. The ceramic layer is disposed between the seed layer and the host. In some embodiments, the compound substrate is attached to the semiconductor structure compound substrate is spaced apart from the semiconductor structure and does not provide mechanical support to the structure. In some embodiments, the ceramic layer has a thickness less than 500 ?m.
    Type: Grant
    Filed: November 29, 2005
    Date of Patent: April 7, 2009
    Assignees: Koninklijke Philips Electronics N.V., Philips Lumiled Lighting, U.S. LLC
    Inventors: Michael R. Krames, Peter J. Schmidt
  • Publication number: 20080308891
    Abstract: A photodetector and a method for fabricating a photodetector. The photodetector may include a substrate, a buffer layer formed on the substrate, and an absorption layer formed on the buffer layer for receiving incident photons and generating charged carriers. An N-doped interface layer may be formed on the absorption layer, an N-doped cap layer may be formed on the N-doped interface layer, and a dielectric passivation layer may be formed above the cap layer. A P+ diffusion region may be formed within the cap layer, the N-doped interface layer and at least a portion of the absorption layer, and at least one contact may be formed on and coupled to the P+ diffusion region.
    Type: Application
    Filed: June 13, 2007
    Publication date: December 18, 2008
    Inventors: Joseph Charles Boisvert, Takahiro D. Isshiki, Rengarajan Sudharsanan
  • Patent number: 7420215
    Abstract: A transparent conductive film substantially made from In2O3, SnO2 and ZnO, having a molar ratio In/(In+Sn+Zn) of 0.65 to 0.8 and also a molar ratio Sn/Zn of 1 or less: The transparent conductive film has a favorable electric contact property with an electrode or line made from Al or Al alloy film. Further, a semiconductor device having an electrode or line made from the transparent conductive film has high reliability and productivity.
    Type: Grant
    Filed: June 22, 2007
    Date of Patent: September 2, 2008
    Assignee: Mitsubishi Electric Corporation
    Inventors: Kazunori Inoue, Nobuaki Ishiga, Kensuke Nagayama, Toru Takeguchi, Kazumasa Kawase
  • Patent number: 7400021
    Abstract: The present invention provides a method for capturing optical micro detectors for improved surgical handling during implantation into an eye comprising the steps of providing an optically active thin film heterostructure on a soluble substrate; forming an array comprising individual optical microdetectors from the optically active thin film heterostructure; attaching the optical microdetector array onto a biodegradable polymer carrier membrane; and separating the optical microdetector array attached to the biodegradable polymer carrier membrane from the soluble substrate thereby capturing the optical microdetectors in the bio-polymer carrier membrane for improved handling of the optical micro-detectors during transfer and implantation into the eye.
    Type: Grant
    Filed: June 27, 2006
    Date of Patent: July 15, 2008
    Assignee: The University of Houston System
    Inventors: NaiJuan J. Wu, Ali Reza Zomorrodian, Alex Ignatiev
  • Patent number: 7378616
    Abstract: A heating apparatus and method for heating a semiconductor device during bonding of electrical contacts onto the device is provided, which includes a heating plate that is provided for heating the semiconductor device and a layer of compliant material extending over at least a portion of the heating plate for mounting the semiconductor device. A holding mechanism secures the semiconductor device on the layer of compliant material during bonding of electrical contacts onto the semiconductor device while it is being heated by the heating plate.
    Type: Grant
    Filed: June 3, 2005
    Date of Patent: May 27, 2008
    Assignee: ASM Technology Singapore Pte. Ltd.
    Inventors: Tin Kwan Bobby Chan, Choong Kead Leslie Lum
  • Patent number: 7349603
    Abstract: Optical arrangement comprising two parallel plates each with a through-hole forming an optical input/output with a given optical axis and one at least partly optical component placed between the plates, the component and the first plate comprising first fastening studs placed transversely in opposite relationship of the plate and connected by first bumps made of a meltable material that when molten is able to selectively wet these first fastening studs in order to optically align the component and the input/output on the first plate, and the two plates comprising second fastening studs placed transversely in opposite relationship of the plate and connected by second bumps made of a meltable material that when molten is able to selectively wet the second fastening studs in order to optically align the inputs/outputs of the two plates.
    Type: Grant
    Filed: December 8, 2003
    Date of Patent: March 25, 2008
    Assignee: Commissariat A l'Energie Atomique
    Inventor: Jean-Charles Souriau
  • Patent number: 7317237
    Abstract: There is disclosed a photovoltaic conversion device constructed using a p-type crystalline silicon substrate 404 doped with boron, which comprises a bulk substrate region 404, regions other than the bulk substrate region including an n-type region 403a joining to a light receiving surface of the bulk surface region, a BSF region 405 joining to a back surface of the bulk surface region, wherein with regions other than the bulk substrate region 404 being removed, when a minority carrier diffusion length of the bulk substrate region 404 is measured from the light receiving surface of the bulk surface region, 0.
    Type: Grant
    Filed: December 22, 2004
    Date of Patent: January 8, 2008
    Assignee: Kyocera Corporation
    Inventors: Koichiro Niira, Shigeru Gotoh
  • Patent number: 7202899
    Abstract: A method and system for preventing white pixel difficulties resulting from undesired current induced in an image sensor having a photodiode and a depletion region therein. The photodiode is isolated in a pixel layout for an image sensor. A depletion region is configured, such that the depletion region is maintained in a defect-free region associated with the pixel layout for the image sensor, thereby reducing white pixel difficulties caused by induced and undesired current. The image sensor is preferably a CMOS image sensor. A depletion region of the photodiode is constantly maintained in a defect-free region during operation of the CMOS image sensor.
    Type: Grant
    Filed: May 21, 2002
    Date of Patent: April 10, 2007
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kuen-Hsien Lin, Shang-Hsuan Liu, Chih-Hsing Chen, Hung Jen Tsai, Hsien-Tsong Liu
  • Patent number: 7008805
    Abstract: The present invention provides an optical device and a method of manufacture thereof. In one embodiment, the method of manufacturing the optical device may include isolating an end of a first layer from a cladding layer located over a mesa structure that has been formed from a substrate. The end of the first layer may be isolated from the cladding layer by encapsulating the end between second and third layers located adjacent the mesa structure.
    Type: Grant
    Filed: December 5, 2003
    Date of Patent: March 7, 2006
    Assignee: TriQuint Technology Holding Co.
    Inventors: Leonard Jan-Peter Ketelsen, Abdallah Ougazzaden, Justin L. Peticolas
  • Patent number: 6952022
    Abstract: The present invention relates to an image sensor comprising an amorphous silicon thin-film transistor optical sensor which functions as an image sensor used for an X-ray photography device, a fingerprint recognition apparatus, a scanner, etc., and a method of manufacturing the image sensor. Since the thin-film transistor optical sensor according to the present invention has a high-resistance silicon region by disposing an offset region in a channel region, a dark leakage current of the optical sensor remains in a low level even under a high voltage. Therefore, it is possible to apply a high voltage to the thin-film transistor optical sensor according to the present invention so that the image senor can be sensitive to a weak light. In addition, since the storage capacitance in the image sensor is formed in a double structure, the image sensor has a high value of capacitance.
    Type: Grant
    Filed: December 9, 2003
    Date of Patent: October 4, 2005
    Assignee: Silicon Display Technology
    Inventors: Jin Jang, Ji Ho Hur, Hyun Chul Nam
  • Patent number: 6913713
    Abstract: Photovoltaic materials and methods of photovoltaic cell fabrication provide a photovoltaic cell in the form of a fiber. These fibers may be formed into a flexible fabric or textile.
    Type: Grant
    Filed: January 24, 2003
    Date of Patent: July 5, 2005
    Assignee: Konarka Technologies, Inc.
    Inventors: Kethinni Chittibabu, Robert Eckert, Russell Gaudiana, Lian Li, Alan Montello, Edmund Montello, Paul Wormser
  • Patent number: 6909161
    Abstract: A photodiode has an optical absorption layer composed of a depleted first semiconductor optical absorption layer with a layer width WD and a p-type neutral second semiconductor optical absorption layer with a layer width WA. The ratio between WA and WD is set such that the total carrier transit time ?tot becomes minimum in the optical absorption layer. The photodiode can further include a depleted semiconductor optical transmission layer with a bandgap greater than that of the first semiconductor optical absorption layer, between the first semiconductor optical absorption layer and an n-type semiconductor electrode layer.
    Type: Grant
    Filed: December 3, 2002
    Date of Patent: June 21, 2005
    Assignee: NTT Electronics Corporation
    Inventors: Tadao Ishibashi, Yukihiro Hirota, Yoshifumi Muramoto
  • Patent number: 6661073
    Abstract: A semiconductor infrared detector includes in the following order: a semiconductor substrate; a layer of electrically insulating material; and patterns formed in a semiconductor layer. The patterns are formed from at least one island that is connected to bridges which are connected to polarization electrodes. The bridges are lines having an approximately constant width lp and the islands are zones having a width li that is greater than that of the lines.
    Type: Grant
    Filed: April 1, 2002
    Date of Patent: December 9, 2003
    Assignee: Centre National de la Recherche Scientifique
    Inventors: Didier Stievenard, Christophe Delerue, Bernard Legrand
  • Patent number: 6639292
    Abstract: A UV light sensing element has at least a first electrode and a sensor. The first electrode has a semiconductor containing at least one element selected from Al, Ga and In together with nitrogen or oxygen, and the sensor layer has a semiconductor containing at least one element selected from Al, Ga and In together with nitrogen. A longer wavelength end of an absorption spectrum for the first electrode is located at a position nearer to a shorter wavelength side than a longer wavelength end of an absorption spectrum for the sensor.
    Type: Grant
    Filed: March 11, 2002
    Date of Patent: October 28, 2003
    Assignee: Fuji Xerox Co., Ltd.
    Inventor: Shigeru Yagi
  • Publication number: 20030183893
    Abstract: An optical-electrical (OE) package includes a substrate electrically coupled to a motherboard via one or more capacitor DC shunts (CDCSs). In one embodiment, the substrate includes an IC chip electrically coupled to a first set of contact-receiving members on an upper surface of the substrate. The substrate also includes a light-emitting package and a photodetector package electrically coupled to respective second and third sets of contact-receiving members on the substrate lower surface. The substrate has internal wiring that electrically interconnects the IC chip, the light-emitting package and the photodetector array. The light-emitting package and the photodetector array are optically coupled to respective first and second waveguide arrays formed in or on the motherboard. The CDCSs mitigate noise generated by the IC chip by serving as a local current source.
    Type: Application
    Filed: March 28, 2002
    Publication date: October 2, 2003
    Applicant: Intel Corporation
    Inventor: Yuan-Liang Li
  • Patent number: 6573581
    Abstract: In a semiconductor p-i-n photodiode an undoped absorption region (10) is epitaxially grown between two highly doped regions (14, 16). In prior art lattice matched InGaAs p-i-n photodiodes current epitaxial structures use low InP cap (16) doping (n˜2.5−6×1016/cm3), and nominally undoped (not intentionally doped, n˜1×1013−5×1014/cm3) InGaAs absorption regions (10). The shunt resistances of p-i-n photodiodes according to the present invention with intentional doping between n˜5×1017/cm3 and 1×1014/cm3, in the InGaAs absorption region (52, 60) are significantly increased over that of a standard structure (non-intentionally doped).
    Type: Grant
    Filed: February 7, 2001
    Date of Patent: June 3, 2003
    Assignee: Finisar Corporation
    Inventors: Allan Richard Sugg, Michael John Lange, Martin Harris Ettenberg
  • Patent number: 6380614
    Abstract: An IC card comprises: a plane coil having respective terminal sections; a semiconductor element arranged at a position not overlapping with the plane coil, the semiconductor element having electrode terminals; means for electrically connecting the respective terminal sections of the plane coil to the electrode terminals of the semiconductor element; and a reinforcing frame arranged on a face substantially the same as that of the semiconductor element so that the semiconductor element is surrounded by the reinforcing frame.
    Type: Grant
    Filed: June 23, 2000
    Date of Patent: April 30, 2002
    Assignee: Shinko Electric Industries Co., Ltd.
    Inventors: Tsutomu Higuchi, Tomoharu Fujii, Shigeru Okamura, Tsuyoshi Sato, Takayoshi Wakabayashi, Masatoshi Akagawa
  • Publication number: 20010019131
    Abstract: The present invention provides a field effect transistor (FET) having, on a semi-insulating compound semiconductor substrate, a buffer layer; an active layer that includes a channel layer made of a first conductive-type epitaxial growth layer (e.g. InGaAs); source/drain electrodes formed on a first conductive-type contact layer which is formed either on said active layer or on a lateral face thereof; a gate layer made of a second conductive-type epitaxial growth layer (e.g. p+-GaAs); and a gate electrode formed on said gate layer; which further has, between said second conductive-type gate layer and said channel layer, a semiconductor layer (e.g. InGaP) that rapidly lowers the energy of the valance band spreading from said gate layer to said channel layer. The present invention improves withstand voltage characteristic of a FET having a pn junction in a gate region (JFET) and realizes stable operations of a JFET.
    Type: Application
    Filed: March 2, 2001
    Publication date: September 6, 2001
    Inventors: Takehiko Kato, Kazuki Ota, Hironobu Miyamoto, Naotaka Iwata, Masaaki Kuzuhara
  • Patent number: 6262830
    Abstract: A transparent metal structure permits the transmission of light over a tunable range of frequencies, for example, visible light, and shields ultraviolet light and all other electromagnetic waves of lower frequencies, from infrared to microwaves and beyond. The transparent metal structure comprises a stack of alternating layers of a high index material and a low index material, at least one of the materials being a metal. By carefully choosing the thickness of the second material, the transparent window can be tuned over a wide range of frequencies.
    Type: Grant
    Filed: September 16, 1997
    Date of Patent: July 17, 2001
    Inventor: Michael Scalora
  • Patent number: 6211560
    Abstract: PtSi/Si Schottky diode infrared detectors are currently being used in large-area focal plane arrays for imaging in the 3-5 micron atmospheric transmission window. Their photoresponse cuts off at about 6 microns, beyond which they cannot detect infrared ratiation. Because of the nature of Schottky diodes, this cut-off wavelength cannot be adjusted during operation, but is relatively fixed, varying only in proportion of the fourth root of an externally applied bias. This disclosure describes a Schottky diode infrared detector with a voltage-tunable cut-off wavelength. The tunability is obtained by modification of the Schottky diode band diagram by insertion of a SiGe layer, with the appropriate parameters, between the silicide and the Si substrate, making the detector a silicide/SiGe/Si Schottky diode detector. The SiGe/Si interface has a valence band offset that can be used to engineer the shape, or depth profile, of the Schottky barrier.
    Type: Grant
    Filed: June 16, 1995
    Date of Patent: April 3, 2001
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: Jorge R. Jimenez, Paul W. Pellegrini
  • Patent number: 6107652
    Abstract: A metal-semiconductor-metal photodetector including an absorbent layer, a barrier layer of greater forbidden band energy on which there are deposited Schottky electrodes and a transition layer of graded composition, the photodetector including a doping plane situated in the vicinity of the join between the absorbent layer and the transition layer of graded composition.
    Type: Grant
    Filed: January 16, 1998
    Date of Patent: August 22, 2000
    Assignee: France Telecom
    Inventors: Andre Scavennec, Abdelkader Temmar
  • Patent number: 6051884
    Abstract: The invention provides a method for producing wiring and contacts in an integrated circuit including the steps of forming insulated gate components on a semiconductor substrate; applying a photo-reducible dielectric layer to cover the substrate; etching holes and forming contacts; photo-reducing the dielectric to increase its conductivity; covering the resulting structure with an interconnect layer; etching the interconnect layer to define wiring in electrical contact with the contacts; and oxidizing the dielectric to reduce its conductivity.
    Type: Grant
    Filed: July 17, 1998
    Date of Patent: April 18, 2000
    Assignee: SGS-Thomson Microelectronics S.A.
    Inventor: Constantin Papadas
  • Patent number: 5977603
    Abstract: In a IR detector and a fabrication method thereof, the IR detector has a insulating thin film (3) made up of insulating material, many semiconductor layers (1) each having an island shape formed on the insulating thin film (3), a forward bias connection section (5) and a backward bias connection section (6) formed for each semiconductor layer (1) to be forward and backward biases to an external bias voltage, and a metal thin film (2) for electrically connecting the semiconductor layers (1) to each other through both the forward bias connection section and the backward bias connection section (5 and 6).
    Type: Grant
    Filed: August 7, 1996
    Date of Patent: November 2, 1999
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventor: Tomohiro Ishikawa
  • Patent number: 5796155
    Abstract: An improvement of the design of Schottky barrier infrared detector (SBIR) arrays, as taught by Roosild, et al. We describe modifications of the detector unit cell design which maximize the fraction of detector electrode area exhibiting full spectral emission response. In particular we recommend changes in the impurity density profile, or "doping", under the Schottky electrode. The new detector cell design can result in a two-fold increase in the photoemission of SBIR arrays, which have small detector cell dimensions.
    Type: Grant
    Filed: June 25, 1997
    Date of Patent: August 18, 1998
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: Freeman D. Shepherd, Jonathan M. Mooney
  • Patent number: 5691563
    Abstract: Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.
    Type: Grant
    Filed: September 12, 1995
    Date of Patent: November 25, 1997
    Assignee: Sandia National Laboratories
    Inventors: Steven R. J. Brueck, David R. Myers, Ashwani K. Sharma
  • Patent number: 5685919
    Abstract: Efficiency of a photoelectric conversion device is increased by inducing a surface plasmon also on a metallic electrode located on the side of the device where light is incident. Incident He-Ne laser light is refracted by a semicylindrical lens and is incident on a magnesium fluoride layer and an Al electrode. The surface plasmon is absorbed by a copper phthalocyanine layer to give a photoelectric current between the Al electrode and an Ag electrode.
    Type: Grant
    Filed: March 13, 1996
    Date of Patent: November 11, 1997
    Assignee: Agency of Industrial Science & Technology
    Inventors: Kazuhiro Saito, Hiroshi Yokoyama, Takashi Wakamatsu
  • Patent number: 5648297
    Abstract: Extended cutoff wavelengths of PtSi Schottky infrared detectors in the long wavelength infrared (LWIR) regime have been demonstrated for the first time. This result was achieved by incorporating a 1-nm-thick p+ doping spike at the PtSi/Si interface. The extended cutoff wavelengths resulted from the combined effects of an increased electric field near the silicide/Si interface due to the p+ doping spike and the Schottky image force. The p+ doping spikes were grown by molecular beam epitaxy at 450 degrees Celsius using elemental boron as the dopant source, with doping concentrations ranging from 1.times.10.sup.19 to 1.times.10.sup.21 cm.sup.-3. The cutoff wavelengths were shown to increase with increasing doping concentrations of the p+ spikes.
    Type: Grant
    Filed: May 21, 1996
    Date of Patent: July 15, 1997
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: True-Lon Lin, Jin S. Park, Sarath D. Gunapala, Eric W. Jones, Hector M. Del Castillo
  • Patent number: 5598016
    Abstract: Disclosed is a photoelectric conversion device in which a photodiode capacitance is increased. A transparent electrode is formed between a reflecting plate and a photodiode constituting a unitary picture element of a CCD image sensor. It is so formed that light is incident from the rear surface and the loop of the standing wave of the light comes on a platinum silicide film, thereby achieving the effective absorption of the incident light. The transparent electrode is formed between the reflecting plate and the photodiode in opposition to the platinum silicide film. The capacitance between the transparent electrode and the platinum silicide film can be utilized as photodiode capacitance.
    Type: Grant
    Filed: December 16, 1994
    Date of Patent: January 28, 1997
    Assignee: NEC Corporation
    Inventors: Akihito Tanabe, Shigeru Tohyama
  • Patent number: 5565676
    Abstract: Disclosed is a photoelectric conversion device in which a photodiode capacitance is increased. A transparent electrode is formed between a reflecting plate and a photodiode constituting a unitary picture element of a CCD image sensor. It is so formed that light is incident from the rear surface and the loop of the standing wave of the light comes on a platinum silicide film, thereby achieving the effective absorption of the incident light. The transparent electrode is formed between the reflecting plate and the photodiode in opposition to the platinum silicide film. The capacitance between the transparent electrode and the platinum silicide film can be utilized as photodiode capacitance.
    Type: Grant
    Filed: June 6, 1995
    Date of Patent: October 15, 1996
    Assignee: NEC Corporation
    Inventors: Akihito Tanabe, Shigeru Tohyama
  • Patent number: 5550370
    Abstract: A high-resistance compound semiconductor 12 is epitaxially grown on a low-resistance compound semiconductor 11 and a dielectric reflecting film 13 is formed thereon, thereby forming a monolithic sensor 10. As the low-resistance compound semiconductor 11, a compound semiconductor is used which has a large bandgap so as to enable probe light to pass therethrough without being absorbed and which has a lattice constant and a thermal expansion coefficient, which are close to those of the high-resistance compound semiconductor. In addition, since the low-resistance compound semiconductor 11 also serves as an electrode, a compound semiconductor which has a resistivity of 10.sup.+1 .OMEGA.cm or less is used. Since the shorter the wavelength of the probe light used, the larger the retardation change and the larger the signal output, a compound semiconductor which has a large bandgap is used as the high-resistance compound semiconductor 12 so that light of short wavelength can be used.
    Type: Grant
    Filed: March 15, 1995
    Date of Patent: August 27, 1996
    Assignee: Dai Nippon Printing Co., Ltd.
    Inventors: Atsushi Takano, Minoru Utsumi, Hiroyuki Obata