Abstract: Disclosed is a photoelectric conversion device in which a photodiode capacitance is increased. A transparent electrode is formed between a reflecting plate and a photodiode constituting a unitary picture element of a CCD image sensor. It is so formed that light is incident from the rear surface and the loop of the standing wave of the light comes on a platinum silicide film, thereby achieving the effective absorption of the incident light. The transparent electrode is formed between the reflecting plate and the photodiode in opposition to the platinum silicide film. The capacitance between the transparent electrode and the platinum silicide film can be utilized as photodiode capacitance.

Abstract: A high-resistance compound semiconductor 12 is epitaxially grown on a low-resistance compound semiconductor 11 and a dielectric reflecting film 13 is formed thereon, thereby forming a monolithic sensor 10. As the low-resistance compound semiconductor 11, a compound semiconductor is used which has a large bandgap so as to enable probe light to pass therethrough without being absorbed and which has a lattice constant and a thermal expansion coefficient, which are close to those of the high-resistance compound semiconductor. In addition, since the low-resistance compound semiconductor 11 also serves as an electrode, a compound semiconductor which has a resistivity of 10.sup.+1 .OMEGA.cm or less is used. Since the shorter the wavelength of the probe light used, the larger the retardation change and the larger the signal output, a compound semiconductor which has a large bandgap is used as the high-resistance compound semiconductor 12 so that light of short wavelength can be used.

Abstract: A photo sensor comprises a semiconductor substrate, a bipolar photo transistor having an emitter region, a base region and a collector region which is formed in the surface region of the semiconductor substrate, a silicon dioxide formed on the bipolar phototransistor, and a film having a smaller diffusion coefficient of hydrogen than the silicon dioxide formed all over the silicon dioxide.

Abstract: An optical filter (18) includes a first layer (22) of material having a bandgap and being doped with an impurity having an energy level in the bandgap such that the first layer absorbs optical energy below a first wavelength and transmits optical energy thereabove. The filter further includes a second layer of optical material (26) disposed on said first layer (22) which transmits optical energy at a second wavelength, above the first wavelength, and reflects optical energy at a third wavelength above the second wavelength. The first and second layers in combination provide a filter (18) with high transmission in-band, low transmission out-of-band and a sharp cutoff therebetween.

Abstract: Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.

Abstract: A high-resistance compound semiconductor 12 is epitaxially grown on a low-resistance compound semiconductor 11 and a dielectric reflecting film 13 is formed thereon, thereby forming a monolithic sensor 10. As the low-resistance compound semiconductor 11, a compound semiconductor is used which has a large bandgap so as to enable probe light to pass therethrough without being absorbed and which has a lattice constant and a thermal expansion coefficient, which are close to those of the high-resistance compound semiconductor. In addition, since the low-resistance compound semiconductor 11 also serves as an electrode, a compound semiconductor which has a resistivity of 10.sup.+1 .OMEGA.cm or less is used. Since the shorter the wavelength of the probe light used, the larger the retardation change and the larger the signal output, a compound semiconductor which has a large bandgap is used as the high-resistance compound semiconductor 12 so that light of short wavelength can be used.

Abstract: A radiation detector (1) includes a multi-layered substrate (2,10) having a first major surface, which is a radiation receiving surface, and a second major surface disposed opposite to the first major surface. A first detector is formed adjacent to the first major surface, the first detector being responsive to a wavelength or wavelengths of electromagnetic radiation in the range of approximately 0.3 micrometers (near-UV) to approximately 1.2 micrometers (near-IR). A second detector is formed adjacent to the second major surface of the multi-layered substrate, the second detector being responsive to a wavelength or wavelengths of electromagnetic radiation in the range of approximately one micrometer to approximately twenty micrometers (SWIR to VLWIR). In a presently preferred embodiment the second detector is simultaneously responsive to IR radiation within two distinct spectral bands.

Abstract: An opto-electronic device with the physical and chemical characteristics at the junction thereof being well matched is disclosed. The opto-etectronic device includes a wafer, a first layer grown on the wafer, and a second layer grown on the first layer, wherein one of the first and second layers is an ordered structure while the other is a disordered structure.

Abstract: A doped or undoped photoresponsive material having metallic precipitates, and a PiN photodiode utilizing the material for detecting light having a wavelength of 1.3 micrometers. The PiN photodiode includes a substrate having a first compound semiconductor layer disposed thereon. The PiN photodiode further includes an optically responsive compound semiconductor layer disposed above the first compound semiconductor layer. The optically responsive layer includes a plurality of buried Schottky barriers, each of which is associated with an inclusion within a crystal lattice of a Group III-V material. The PiN device also includes a further compound semiconductor layer disposed above the optically responsive layer. For a transversely illuminated embodiment, waveguiding layers may also be disposed above and below the PiN structure. In one example the optically responsive layer is comprised of GaAs:As.

Abstract: Methods and apparatus for implementing charge skimming and variable integration time in focal plane arrays formed in a silicon substrate. The present invention provides for pulsing a field plate that lies over a diode disposed in the substrate in order to provide for charge skimming and variable integration time. The field plate is normally dc biased to suppress diode edge leakage. No additional structure is needed in the silicon substrate, and basic readout clocking is unaffected. Any interline transfer focal plane array can benefit from using the principles of the present invention.

Abstract: An electromagnetic wave detector comprises a stack of quantum wells included between an ohmic contact and a rectifier junction which may be a barrier (Al.sub.y Ga.sub.1-y As) with a forbidden band width that is greater than that of the barriers of the quantum wells.

Abstract: Platinum Silicide (PtSi) layers formed on silicon substrates are well known for their ability to image in the infrared portion of the electromagnetic spectrum out to 5.75 micrometers. The detectors are formed on p-type silicon substrates of <100> orientation. This is the preferred crystal structure for silicon when used for fabrication of Very Large Scale Integration (VLSI). The cooling required for these devices is 77.degree. K., which is needed to reduce thermal currents in the diodes to be significantly below the infrared generated signal. Detector array operation at these temperatures does not allow for operation in space for extended missions because a closed cycle mechanical cooler must be used. We have developed a new PtSi detector which must be fabricated on p-type silicon having a <111> crystal orientation. The detectors have been measured for their cutoff wavelength and barrier height is 0.310 eV which translates to a cutoff wavelength of 4.0 micrometers.