Abstract: Provided is a resistive element which has excellent inrush current resistance, and can suppress heat generation in a steady state. The resistive element has an element main body of a semiconductor ceramic in which the main constituent has a structure of R11-xR2xBaMn2O6 in which 0.05?x?1.0 when R1 is Nd and R2 is at least one of Sm, Eu and Gd; 0.05?x?0.8 when R1 is Nd and R2 is at least one of Tb, Dy, Ho, Er, and Y; 0?x?0.4 when R1 is at least one of Sm, Eu, and Gd and R2 is at least one of Tb, Dy, Ho, and Y; and 0?x?1.0 when R1 is at least one of Sm, Eu, and Gd and R2 is at least one of Sm, Eu, and Gd, but the Sm, Eu, and/or Gd in R1 is different from that in R2.

Abstract: An electrically conductive composite material that includes an electrically conductive polymer, and at least one metal nanoparticle coated with a protective agent, wherein said protective agent includes a compound having a first part that has at least part of the molecular backbone of said electrically conductive polymer and a second part that interacts with said at least one metal nanoparticle.

Abstract: A method of forming an electromechanical transducer device comprises forming on a fixed structure a movable structure and an actuating structure of the electromechanical transducer device, wherein the movable structure is arranged in operation of the electromechanical transducer device to be movable in relation to the fixed structure in response to actuation of the actuating structure. The method further comprises providing a stress trimming layer on at least part of the movable structure, after providing the stress trimming layer, releasing the movable structure from the fixed structure to provide a released electromechanical transducer device, and after releasing the movable structure changing stress in the stress trimming layer of the released electromechanical transducer device such that the movable structure is deflected a predetermined amount relative to the fixed structure when the electromechanical transducer device is in an off state.

Abstract: A measuring apparatus including a first chip, a first circuit layer, a first heater, a first stress sensor and a second circuit layer is provided. The first chip has a first through silicon via, a first surface and a second surface opposite to the first surface. The first circuit layer is disposed on the first surface. The first heater and the first stress sensor are disposed on the first surface and connected to the first circuit layer. The second circuit layer is disposed on the second surface. The first heater comprises a plurality of first switches connected in series to generate heat.

Abstract: An integrated circuit has thermoelectric cooling devices integrated into bondpads. A method for operating the integrated circuit includes turning a thermal switch to a thermoelectric cooler operate position when the integrated circuit is powered up, turning the thermal switch to a thermoelectric cooler operate position to allow the thermoelectric cooler to operate when the integrated circuit powers down, and turning the thermal switch to a thermoelectric cooler off position when a predetermined integrated circuit chip temperature is reached.

Abstract: An integrated circuit containing an embedded resistor in close proximity to an embedded thermoelectric device. An integrated circuit containing an embedded resistor in close proximity to an embedded thermoelectric device composed of thermoelectric elements and at least one switch to disconnect at least one thermoelectric element from the thermoelectric device. Methods for testing embedded thermoelectric devices.

Abstract: Array of nanoholes and method for making the same. The array of nanoholes includes a plurality of nanoholes. Each of the plurality of nanoholes corresponds to a first end and a second end, and the first end and the second end are separated by a first distance of at least 100 ?m. Each of the plurality of nanoholes corresponds to a cross-sectional area associated with a distance across, and the distance across ranges from 5 nm to 500 nm. Each of the plurality of nanoholes is separated from at least another nanohole selected from the plurality of nanoholes by a semiconductor material associated with a sidewall thickness, and the sidewall thickness ranges from 5 nm to 500 nm.

Abstract: A first back surface of a first chip faces toward a carrier. A first active surface of the first chip has first pads and a first insulting layer thereon. A second chip is disposed on the first chip and electrically connected to the carrier. A second active surface of the second chip faces toward the first active surface. The second active surface has second pads and a second insulting layer thereon. Bumps connect the first and second pads. First and second daisy chain circuits are respectively disposed on the first and second insulting layers. Hetero thermoelectric device pairs are disposed between the first and second chips and connected in series by the first and second daisy chain circuits, and constitute a circuit with an external device. First and second heat sinks are respectively disposed on a second surface of the carrier and a second back surface of the second chip.

Abstract: A thermoelectric conversion module includes a laminated body including a plurality of thermoelectric components laminated therein. Each of the thermoelectric components includes an insulating layer, and a thermoelectric conversion element section in which a plurality of p-type thermoelectric conversion material layers and a plurality of n-type thermoelectric conversion material layers are arranged on the insulating layer in a series connection. A step eliminating insulating material layer is arranged to eliminate a step between the thermoelectric conversion element section and a vicinity thereof, in a region between the insulating layers adjacent to each other in a laminating direction, around the p-type thermoelectric conversion material layers and n-type thermoelectric conversion material layers constituting the thermoelectric conversion element section. The thermoelectric conversion element section has a serpentine shape.

Abstract: An integrated circuit, comprising a capacitive device having a thermally variable capacitive value and comprising a thermally deformable assembly disposed within an enclosure, and comprising an electrically-conducting fixed body and a beam held at at least two different locations by at least two arms rigidly attached to edges of the enclosure, the beam and the arms being metal and disposed within the first metallization level. A part of the said thermally deformable assembly may form a first electrode of the capacitive device and a part of the said fixed body may form a second electrode of the capacitive device. The thermally deformable assembly has a plurality of configurations corresponding respectively to various temperatures of the said assembly and resulting in a plurality of distances separating the two electrodes and various capacitive values in the capacitive device corresponding to the plurality of distances.

Abstract: An integrated circuit comprising a mechanical device for electrical switching comprising a first assembly being thermally deformable and having a beam held at at least two different locations by at least two arms, the beam and the arms being metal and disposed within the same metallization level, and further comprising at least one electrically conducting body. The first assembly has a first configuration at a first temperature and a second configuration at a second temperature different from the first temperature. The beam is out of contact with the electrically conducting body in one configuration in contact with the body in the other configuration. The beam establishes or breaks an electrical link passing through the said at least one electrically conducting body and through the said beam in the different configurations.

Abstract: Embodiments related to semiconductor manufacturing and semiconductor devices with semiconductor structure are described and depicted.

Abstract: An energy harvesting integrated circuit (IC) includes electrical connectors, each having a portion of a first material and a portion of a second material. The first and the second materials have a thermoelectric potential. The IC includes a trace of the first material coupled to the first material of each electrical connector, and a trace of the second material coupled to the second material of each electrical connector and the first trace. A portion of the second trace extends away from a portion of the first trace. The IC has charge storing elements coupled to the first and/or second traces. The first material and the second material are heated to create an electron flow from a thermal gradient between a first zone of the heated first and second materials and a second zone of the first and the second materials away from the first zone.

Abstract: A semiconductor package is disclosed. In one aspect, the package includes a base frame and a wiring substrate mounted on the base frame. The base frame has two pieces made of a material with respectively a first and a second coefficient of thermal expansion and connected to each other via resilient connecting structures. The wiring substrate has electric wiring tracks providing the electric connection between first and second bond pads, provided for being electrically connected to bond pads on respectively a die and a printed wiring board. The electrical wiring tracks have flexible parts provided to expand and contract along with the resilient connecting structures.

Abstract: Radiation detectors and methods of fabricating radiation detectors are provided. One method includes mechanically polishing at least a first surface of a semiconductor wafer using a polishing sequence including a plurality of polishing steps, wherein a last polishing step of the polishing sequence includes polishing with a slurry having a grain size smaller than about 0.1 ?m to create a polished first surface. The method also includes applying (i) an encapsulation layer on a top of the polished first surface to seal the polished first surface and (ii) a photoresist layer on top of the encapsulation layer on the polished first surface. The method further includes creating undercuts of the encapsulation layer under the photoresist layer. The method additionally includes partially etching the polished first surface of the semiconductor via the openings in the photoresist layer and in the encapsulation layer to partially etch the semiconductor creating etched regions.

Abstract: Embodiments of a system to maintain an even temperature distribution across a laser detector are generally described herein. In some embodiments, the system includes a multi-layer printed circuit board (PCB) assembly that includes a first layer comprising a thermally-conductive ring provided circumferentially around a thermally-conductive detector region for mounting the laser detector, a second layer comprising a plurality of resistive elements aligned with the thermally-conductive detector region to generate heat, and a fourth layer comprising a thermally-conductive heat-distribution region aligned with the thermally-conductive detector region. A plurality of thermally-conductive vias is provided to couple the thermally-conductive ring of the first layer to the thermally-conductive heat-distribution region of the fourth layer.

Abstract: An object of the present invention is to provide a thermal airflow sensor that prevents moisture absorption by a silicon oxide film formed closest to a surface (formed to be located on an uppermost portion), and that reduces a measuring error. In order to attain the foregoing object, the thermal airflow sensor according to the present invention applies an ion implantation to a silicon oxide film 4, formed closest to a surface (formed to be located on an uppermost portion), by using an atom or molecule selected from at least any one of silicon, oxygen, and an inert element such as argon or nitrogen, in order to increase a concentration of an atom contained in the silicon oxide film 4 more than that before the ion implantation.

Abstract: A semiconductor thermoelectric cooler is configured to direct heat through channels of the cooler. The thermoelectric cooler has multiple electrodes and a first dielectric material positioned between side surfaces of the electrodes. A second dielectric material, different from the first dielectric material, is in contact with top surfaces of the electrodes. The first dielectric material extends above the top surface of the electrodes, separating portions of the second dielectric material, and is in contact with a portion of the top surfaces of the electrodes. The first dielectric material has a thermal conductivity different than a thermal conductivity of the second dielectric material. A ratio of the first dielectric material to the second dielectric material in contact with the top surface of the electrodes may be selected to control the heat retention. The semiconductor thermoelectric cooler may be manufactured using thin film technology.

Abstract: A thermopile sensor array is provided. The thermopile sensor array may include multiple pixels formed by multiple thermopiles arranged on a single common shared support membrane. A separation between the edge of the shared support membrane and the outermost thermopile(s) may be included to provide additional thermal isolation between the thermopile and an underlying silicon substrate.

Abstract: A resonator element for the absorption and/or conversion of electromagnetic waves having a predefined wavelength, in particular infrared radiation having a wavelength of 2 ?m to 200 ?m, into heat, has a three-layer structure formed of a first metal layer, a second metal layer and a dielectric layer interposed between the two metal layers. The maximum lateral dimension of the layers is in the range between one quarter and a half of the predefined wavelength.

Abstract: A compact resistive thermal sensor is provided for an integrated circuit (IC), wherein different sensor components are placed on different layers of the IC. This allows the lateral area needed for the sensor resistance wire on any particular IC layer to be selectively reduced. In a useful embodiment, first linear conductive members are positioned in a first IC layer, in parallel relationship with one another. Second linear conductive members are positioned in a second IC layer in parallel relationship with one another. Conductive elements connect the first linear members into a first conductive path, and the second linear members into a second conductive path. A third conductive element extending between the first and second layers connects the first and second conductive paths into a single conductive path, wherein the path resistance varies with temperature. The path resistance is used to determine temperature.

Abstract: The infrared sensor (1) includes a base (10), and an infrared detection element (3) formed over a surface of the base (10). The infrared detection element (3) comprises an infrared absorption member (33) in the form of a thin film configured to absorb infrared, and a temperature detection member (30) configured to measure a temperature difference between the infrared absorption member (33) and the base (10). The temperature detection member (30) includes a p-type polysilicon layer (35) formed over the infrared absorption member (33) and the base (10), an n-type polysilicon layer (34) formed over the infrared absorption member (33) and the base (10) without contact with the p-type polysilicon layer (33), and a connection layer (36) configured to electrically connect the p-type polysilicon layer (35) to the n-type polysilicon layer (34). Each of the p-type polysilicon layer (35) and the n-type polysilicon layer (34) has an impurity concentration in a range of 1018 to 1020 cm?3.

Abstract: Provided are a thermistor with 3 terminals, a thermistor-transistor including the thermistor, a circuit for controlling heat of a power transistor using the thermistor-transistor, and a power system including the circuit. The circuit includes: a thermistor-transistor which comprises a thermistor having a resistance decreasing with an increase in temperature and a control transistor connected to the thermistor; and at least one power transistor which is connected to a driving device to control a supply of power to the driving device, wherein the thermistor-transistor is adhered to one of a surface and a heat-emitting part of the at least one power transistor and is connected to one of a base, a gate, a collector, and a drain of the at least one power transistor to decrease or block a current flowing in the at least one power transistor when the temperature of the at least one power transistor rises, so as to prevent the power transistor from heating up.

Abstract: A sensor having a monolithically integrated structure for detecting thermal radiation includes: a carrier substrate, a cavity, and at least one sensor element for detecting thermal radiation. Incident thermal radiation strikes the sensor element via the carrier substrate. The sensor element is suspended in the cavity by a suspension.

Abstract: A THz radiation detector comprising a vertical antenna separated from a suspended platform by an isolating thermal air gap for concentrating THz radiation energy into a smaller suspended MEMS platform upon which a thermal sensor element is located. THz photon energy is converted into electrical energy via a thermally isolated air gap between plates of a coupling capacitor that couples energy from the antenna to the thermal sensor. The capacitor plates used for capacitive coupling of the received signal realize an electro-static actuator whereby the application of a DC bias varies the coupling capacitor gap. The DC bias causes the actuator to pull the suspended platform close to the antenna to reduce the capacitive gap, increasing the coupling capacitance, to touch the antenna array thus quickly discharging the heat induced in the sensor platform or to perform advanced readout operations, such as amplitude modulation and correlated double sampling.

Abstract: A method for manufacturing a thermoelectrical device includes providing a substrate and also forming at least one deep trench into the substrate. The method further includes forming at least one thermocouple which comprises two conducting paths, wherein a first conducting path comprises a first conductive material and a second conducting path comprises a second conductive material, such that at least the first conducting path is embedded in the deep trench of the substrate.

Abstract: A stacked die package for an electromechanical resonator system includes an electromechanical resonator die bonded or fixed to a control IC die for the electromechanical resonator by, for example, a thermally and/or electrically conductive epoxy. In various embodiments, the electromechanical resonator can be a micro-electromechanical system (MEMS) resonator or a nano-electromechanical system (NEMS) resonator. Certain packaging configurations that may include the chip that contains the electromechanical resonator and the control chip include chip-on-lead (COL), chip-on-paddle (COP), and chip-on-tape (COT) packages. The stacked die package may provide small package footprint and/or low package thickness, and low thermal resistance and a robust conductive path between the dice.

Abstract: Graphene-based thermopiles are provided. The graphene-based thermopiles may include thermocouples having one or more graphene strips that may be polarized to adjust their Seebeck coefficients. The polarized graphene strips may have larger Seebeck coefficients than the materials conventionally used in thermopile devices. As a result, the graphene-based thermopiles may generate large output voltages using fewer thermocouples than conventional thermopile devices.

Abstract: A thin-film semiconductor device includes a temperature sensor formed of a thin-film semiconductor and sensing a temperature as current, and a current-voltage converter formed of a thin-film semiconductor and having temperature dependence in which its current-voltage characteristic is different from that of the temperature sensor. A temperature sensed by the temperature sensor is converted to a voltage by the current-voltage converter.

Abstract: In various embodiments, a chip module may include a first chip; and a leadframe with a first leadframe area and a second leadframe area, wherein the first leadframe area is electrically insulated from the second leadframe area; wherein the first chip is arranged at least partially on the first leadframe area and at least partially on the second leadframe area.

Abstract: A MEMS (micro-electro-mechanical system) getter microdevice for controlling the ambient pressure inside the hermetic packages that enclose various types of MEMS, photonic, or optoelectronic devices. The getter microdevice revolves around a platform suspended at a height above a substrate, and which is supported by supporting legs having low thermal conductance. Layers are deposited on the platform, such layers including a properly patterned resistor element, a heat-spreading layer and, finally, a thin-film getter material. When an electrical current flows through it, the resistor element heats the thin-film getter material until it reaches its activation temperature. The getter material then absorbs the gas species that could be present in the hermetic package, such gas species possibly impairing the operation of the devices housed in the packages while reducing their lifetime.

Abstract: According to an embodiment, a semiconductor device includes a semiconductor substrate and an amorphous semi-insulating layer on the semiconductor substrate.

Abstract: An object is to provide a PTC element that can be made thinner, using a Pb-free semiconductor ceramic composition. The object is achieved with a PTC element including at least two metal electrodes and a BaTiO3 system semiconductor ceramic composition arranged between the electrodes, in which, in the semiconductor ceramic composition, a portion of Ba in the BaTiO3 system is substituted by Bi—Na and a semiconductorizing element, vacancies are formed on Bi sites by depleting at least a portion of Bi, and oxygen defects are formed on a crystal thereof. Since the PTCR characteristic at the inside of the semiconductor ceramic composition is negligibly weak in comparison with the PTCR characteristic at the interface between the semiconductor ceramic composition and the electrodes, the PTC element can be made thinner.

Abstract: An integrated circuit may include a region containing a thermoelectric material and be configured to be subjected to a temperature gradient resulting from a flow of an electric current in a part of the integrated circuit during its operation, and an electrically conducting output coupled to the region for delivering the electrical energy produced by thermoelectric material.

Abstract: A method of forming a focal plane array by: forming a first wafer having sensing material provided on a surface, which is covered by a sacrificial layer, the sensing material being a thermistor material defining at least one pixel; providing supporting legs for the pixel within the sacrificial layer, covering them with a further sacrificial layer and forming first conductive portions in the surface of the sacrificial layer that are in contact with the supporting legs; forming a second wafer having read-out integrated circuit (ROIC), the second wafer being covered by another sacrificial layer, into which is formed second conductive portions in contact with the ROIC; bringing the sacrificial oxide layers of the first wafer and second wafer together such that the first and second conductive portions are aligned and bonding them together such that the sensing material is transferred from the first wafer to the second wafer when a sacrificial bulk layer of the first wafer is removed; and removing the sacrificial l

Abstract: A method of forming a focal plane array by: preparing a first wafer having sensing material provided on a surface, which is covered by a sacrificial layer; preparing a second wafer including read-out integrated circuit and a contact pad, which is covered by another sacrificial layer into which are formed support legs in contact with the contact pad, the support legs being covered with a further sacrificial layer; bonding the sacrificial layers of the first and second wafers together such that the sensing material is transferred from the first wafer to the second wafer when a sacrificial bulk layer of the first wafer is removed; defining a pixel in the sensing material and forming a conductive via through the pixel for providing a connection between an uppermost surface of the pixel and the supporting legs; and removing the sacrificial layers to release the pixel, with the supporting legs underneath it.

Abstract: A pyroelectric detector includes a pyroelectric detection element, a support member and a support part. The pyroelectric detection element has a capacitor including a first electrode, a second electrode, and a pyroelectric body. The support member includes first and second sides with the pyroelectric detection element being mounted on the first side and the second side facing a cavity. The support part, the support member, and the pyroelectric detection element are laminated in this order in a first direction with the cavity being formed between the support part and the support member. The support member has at least a first insulation layer on the first side contacting the first electrode, with the first insulation layer having a hydrogen content rate smaller than a hydrogen content rate of a second insulation layer positioned further in a second direction than the first insulation layer, the second direction being opposite the first direction.

Abstract: A pyroelectric detector includes a pyroelectric detection element mounted on a first side of a support member with a second side facing a cavity. The pyroelectric detection element has a capacitor including a first electrode, a pyroelectric body and a second electrode, and an interlayer insulation layer forming first and second contact holes passing respectively through to the first and second electrodes. First and second plugs are respectively embedded in the first and second contact holes, with first and second electrode wiring layers are respectively connected to the first and second plugs. A thermal conductivity of material of the second electrode wiring layer is lower than a thermal conductivity of material of a portion of the second electrode connected to the second plug.

Abstract: A temperature sensing element includes a thermistor composed of Si-base ceramics and a pair of metal electrodes bonded onto the surfaces of the thermistor. The metal electrodes contain Cr and a metal element ? having a Si diffusion coefficient higher than that of Cr. A diffusion layer is formed in a bonding interface between the thermistor and each metal electrode, the diffusion layer including a silicide of the metal element ? in a crystal grain boundary of the Si-base ceramics. A temperature sensor including the diffusion layers is provided. Owing to the diffusion layers, the temperature sensor ensures heat resistance and bonding reliability and enables temperature detection with high accuracy in a temperature range, in particular, of from ?50° C. to 1050° C.

Abstract: To provide an integrated circuit with functionality under environment with temperature lower than a working condition, the integrated circuit is designed to include a heating element incorporated with signal pins on a carrier, such as a lead frame, that supports a chip die and controlled by a heating control unit to increase temperature of the chip die. The heating control unit provides voltage for the heating element when a detecting unit detects that the temperature of the chip die falls below a predetermined temperature and a power control unit provide operation power for the chip die when the temperature of the chip die detected by the detecting unit reaches or falls above the predetermined temperature.

Abstract: An integrated thermoelectric generator includes a semiconductor. A set of thermocouples are electrically connected in series and thermally connected in parallel. The set of thermocouples include parallel semiconductor regions. Each semiconductor region has one type of conductivity from among two opposite types of conductivity. The semiconductor regions are electrically connected in series so as to form a chain of regions having, alternatingly, one and the other of the two types of conductivity.

Abstract: Embodiments of the invention provide robust electrothermal MEMS with fast thermal response. In one embodiment, an electrothermal bimorph actuator is fabricated using aluminum as one bimorph layer and tungsten as the second bimorph layer. The heating element can be the aluminum or the tungsten, or a combination of aluminum and tungsten, thereby providing a resistive heater and reducing deposition steps. Polyimide can be used for thermal isolation of the bimorph actuator and the substrate. For MEMS micromirror designs, the polyimide can also be used for thermal isolation between the bimorph actuator and the micromirror.

Abstract: A semiconductor structure is provided that can be used for cooling, heating, and power generation. A first region of the semiconductor structure has a first length and comprises a first semiconductor material doped at a first concentration with a first dopant. A second region is disposed adjacent to the first region so as to define a first interface, has a second length which is longer than the first length, and comprises a second semiconductor material doped at a second concentration with a second dopant. At least one of the first material, second material, first concentration, second concentration, first length, second length, first dopant, and second dopant is selected to create, at the first interface, a forward electrical potential step having a barrier height dependent at least in part on an average temperature (T) of the semiconductor structure, e.g., a range of approximately 3-10 ?BT, where ?B is the Boltzmann constant.

Abstract: Conventional “on-chip” or monolithically integrated thermocouples are very mechanically sensitive and are expensive to manufacture. Here, however, thermocouples are provided that employ different thicknesses of thermal insulators to help create thermal differentials within an integrated circuit. By using these thermal insulators, standard manufacturing processes can be used to lower cost, and the mechanical sensitivity of the thermocouple is greatly decreased. Additionally, other features (which can be included through the use of standard manufacturing processes) to help trap and dissipate heat appropriately.

Abstract: An infrared (IR) radiation sensor device (27) includes an integrated circuit radiation sensor chip (1A) including first (7) and second (8) temperature-sensitive elements connected within a dielectric stack (3) of the chip, the first temperature-sensitive element (7) being more thermally insulated from a substrate (2) than the second temperature-sensitive element (8). Bonding pads (28A) on the chip (1) are coupled to the first and second temperature-sensitive elements. Bump conductors (28) are bonded to the bonding pads (28A), respectively, for physically and electrically connecting the radiation sensor chip (1) to corresponding mounting conductors (23A). A diffractive optical element (21,22,23,31,32 or 34) is integrated with a back surface (25) of the radiation sensor chip (1) to direct IR radiation toward the first temperature-sensitive element (7).

Abstract: An integrated power transistor includes emitter or source regions, and a comb-like patterned metal electrode structure interconnecting the emitter or source regions and defining at least one connection pad. The comb-like patterned metal electrode structure includes a plurality of fingers. A current sensing resistor produces a voltage drop representative of a current delivered to a load by the integrated power transistor. The current sensing resistor includes a portion of a current carrying metal track having a known resistance value and extending between one of the fingers and a connectable point along the current carrying metal track.

Abstract: Provided is a high-power device having a thermocouple (thermoelectric couple) for measuring the temperature of a transistor constituting a high-power device. The high-power device includes a heating element, a thermocouple formed adjacent to the heating element, and a dielectric body formed between the heating element and the thermocouple.

Abstract: A thermopile sensor array is provided. The thermopile sensor array may include multiple pixels formed by multiple thermopiles arranged on a single common shared support membrane. A separation between the edge of the shared support membrane and the outermost thermopile(s) may be included to provide additional thermal isolation between the thermopile and an underlying silicon substrate.

Abstract: A semiconductor unit includes a semiconductor chip, a ceramic substrate having a circuit pattern on which the semiconductor chip is mounted, and a temperature sensor for detecting a temperature. The semiconductor unit further includes a pressing member for retaining the temperature sensor by pressing against the ceramic substrate.

Abstract: According to an exemplary embodiment, a dual compartment semiconductor package includes a conductive clip having first and second compartments. The first compartment is electrically and mechanically connected to a top surface of the first die. The second compartment electrically and mechanically connected to a top surface of a second die. The dual compartment semiconductor package also includes a groove formed between the first and second compartments, the groove preventing contact between the first and second dies. The dual compartment package electrically connects the top surface of the first die to the top surface of the second die. The first die can include an insulated-gate bipolar transistor (IGBT) and the second die can include a diode. A temperature sensor can be situated adjacent to, over, or within the groove for measuring a temperature of the dual compartment semiconductor package.