Abstract: A semiconductor device includes a semiconductor element circuit, a conductive support and a sealing resin. The conductive support includes a die pad, first terminals spaced in a first direction, second terminals spaced in the first direction and opposite to the first terminals in a second direction perpendicular to the first direction, and a support terminal connected to the die pad. The sealing resin encapsulates portions of the first and second terminals, a portion of the support terminal, the semiconductor element circuit and the die pad. The sealing resin has two first side surfaces spaced apart in the second direction and two second side surfaces spaced apart in the first direction. The first terminals and second terminals are exposed from the first side surfaces, while none of the elements of the conductive support is exposed from the second side surfaces.

Abstract: A semiconductor device includes a semiconductor element, first and second leads, and a sealing resin. The semiconductor element includes first and second electrodes. The first lead includes a mounting base having a main face to which the first electrode is bonded and a back face, and includes a first terminal connected to the first electrode. The second lead includes a second terminal connected to the second electrode. The sealing resin includes a main face and a back face opposite to each other, and includes an end face oriented in the protruding direction of the terminals. The back face of the mounting base is exposed from the back face of the resin. The sealing resin includes a groove formed in its back face and disposed between the back face of the mounting base and a boundary between the second terminal and the end face of the resin.

Abstract: A semiconductor package includes a metallic pad and leads spaced from the metallic pad by a gap, the metallic pad including a roughened surface. The semiconductor package further includes a semiconductor die including bond pads, and an adhesive between the roughened surface of the metallic pad and the semiconductor die, therein bonding the semiconductor die to the metallic pad, wherein the adhesive includes a resin. The metallic pad further includes a groove surrounding the semiconductor die on the roughened surface, the groove having a surface roughness less than a surface roughness of the roughened surface of the metallic pad.

Abstract: A mold chase has first and second mold clamps having corresponding teeth and recesses configured such that, when the mold chase is closed onto a sub-assembly having an IC die mounted onto and wire-bonded to a lead frame, there are gaps between the recesses and the leads of the lead frame that allow molding compound to extend along opposing sides of proximal ends of the leads to increase the metal-to-metal distance between adjacent leads, thereby reducing the chances of, for example, tin migrating during HAST testing to form undesirable conduction paths between adjacent leads. In some embodiments, the mold clamp teeth have chamfered edges that are tapered at the mold chase cavity to form wedge-shaped gaps that allow the molding compound to extrude along the proximal ends of the leads of MaxQFP packages having two levels of “J” leads and gullwing leads.

Abstract: Provided are a wafer level package and a method of manufacturing the same, wherein an underfill sufficiently fills a space between a redistribution substrate and a semiconductor chip, thereby reducing warpage. The wafer level package includes a redistribution substrate including at least one redistribution layer (RDL), a semiconductor chip on the redistribution substrate, and an underfill filling a space between the redistribution substrate and the semiconductor chip. The underfill covers side surfaces of the semiconductor chip. The redistribution substrate includes a trench having a line shape and extending in a first direction along a first side surface of the semiconductor chip.

Abstract: A wiring substrate includes: a plurality of wiring layers; and a plurality of insulating layers. The wiring substrate includes: a mounting region on which an electronic component is to be mounted; and a non-mounting region on which no electronic component is to be mounted and which is configured to be bent in a first direction. At least one of the wiring layers comprises a shield pattern. The shield pattern disposed in the non-mounting region is defined by a plurality of through holes arranged at predetermined intervals. Each of the through holes has a bent portion bent in plan view.

Abstract: The electronic circuit device according to the present invention including the wiring layer 13 including a plurality of the metal wirings, the photosensitive resin layer 21 made of the photosensitive resin arranged on the wiring layer 13, and the first electronic circuit element 33 arranged in the photosensitive resin layer 21. In this electronic circuit device, a plurality of opening 41 for exposing a part of the wiring layer 13 is formed on the photosensitive resin layer 21, and further, together with three-dimensionally connected to the first electronic circuit element 33, the re-distribution layer 42 on the first electronic circuit element including a plurality of the metal wirings which is three-dimensionally connected via a plurality of openings to a part of the wiring layer 13, and the first external connection terminal 51 connected to the re-distribution layer 42 are formed.

Abstract: In some examples, a device comprises an electronic component having multiple electrical connectors, the multiple electrical connectors configured to couple to a printed circuit board (PCB) and having a first footprint. The device also comprises a multi-lead adapter comprising multiple rows of leads arranged in parallel, the leads in the rows configured to couple to the electrical connectors of the electronic component and having a second footprint that has a different size than the first footprint.

Abstract: An electronic module comprises a sealing part 90, a rear surface-exposed conductor 10, 20, 30, a rear surface-unexposed conductor 40, 50 and a second connector 70 for electrically connecting an electronic element 15, 25 to the rear surface-unexposed conductor 40, 50. The rear surface-unexposed conductor 40, 50 is positioned on a front surface side compared with the rear surface-exposed part 12, 22, 32. The second connection tip part 72 is positioned on a rear surface side compared with the second connection base part 71. A distance H in a thickness direction between a rear surface side end part of the second connection base part 71 and a rear surface side end part of the second connection tip part 72 is larger than a width W of the second connection tip part 72 of the second connector 70.

Abstract: The invention discloses an encapsulation structure with high density, multiple sided and exposed leads and method for manufacturing the same. The encapsulation structure includes a package, a die pad and a plurality of leads, wherein the die pad and the leads are disposed at a bottom of the package; bottom surfaces of the leads expose in a bottom surface of the package, and the leads extends towards multiple sides of the package until beyond the package; the package includes an integrated circuit provided on the die pad and connected with the leads, and a plastic package for packaging the integrated circuit, the die pad and the leads; a bottom surface of the die pad and the bottom surfaces of the leads are provided on the same horizontal plane; the leads comprise a first lead distant from the die pad.

Abstract: A system includes a substrate; a bond pad; a wire spanning above the substrate, having a first end bonded to the bond pad and a second end extending from the bond pad to terminate in a second end thereof; and a support structure disposed on the substrate, the support structure comprising at least a side wall and extending from the substrate to terminate in an end portion spaced from the substrate to support the wire.

Abstract: A bond-wire system including a wire bond that is deflected above a dielectric ridge at a die edge. The deflected wire bond allows for both a lowered Z-profile and a reduced X-Y footprint. The bond-wire system may include a stacked-die configuration where a stacked die is wire bonded and the stacked-die bond wire is deflected above a dielectric ridge at the stacked die edge.

Abstract: According to one embodiment, a semiconductor device includes a first semiconductor element having a first surface, a second semiconductor element having a lower surface bonded to the first surface of the first semiconductor element, a gel-like silicone that covers an upper surface of the second semiconductor element, and a resin portion that covers the gel-like silicone and the first surface of the first semiconductor element.

Abstract: The present publication discloses a micromechanical structure including at least one active element, the micromechanical structure comprising a substrate, at least one layer formed on the substrate forming the at least part of the at least one active element, mechanical contact areas through which the micromechanical structure can be connected to other structures like printed circuit boards and like. In accordance with the invention the micromechanical structure includes weakenings like trenches around the mechanical contact areas for eliminating the thermal mismatch between the active element of the micromechanical structure and the other structures.

Abstract: A television based alarm system provides video streams from multiple cameras produced at a first location that is transmitted via a radio transmitter to a secondary location. Motion detector signals from a plurality of motion detectors at the first location are utilized to indicate when and which cameras are likely to see an intruder based on when and which motion detectors are tripped. In a first type of encoder/decoder, motion detectors are connected to LEDS for encoding and then decoded utilizing photo electric cells. In another encoder/decoder, motion detector signals are used to produce a digital word that is added to the video signal and then decoded as a digital word. An output device such as a printer can be used to print the motion detector number, date, and time print out and sound an alarm.

Abstract: A method includes the steps of fabricating one or more semiconductor devices on a semiconductor wafer and depositing one or more conformal organic environmental protection layers over the semiconductor wafer using a vapor deposition process. By depositing the one or more conformal organic environmental protection layers using a vapor deposition process, thin film conformal organic environmental protection layers may be provided that offer excellent protection against water and oxygen ingress, thus increasing the ruggedness and reliability of the resulting semiconductor die.

Abstract: A composite sheet, including: a buffer sheet; and a heat dissipation sheet on one surface of the buffer sheet. One surface of the heat dissipation sheet facing the one surface of the buffer sheet may have a smaller area than the one surface of the buffer sheet. A display device includes a display panel and a composite sheet on one surface of the display panel.

Abstract: A variety of footed and leadless semiconductor packages, with either exposed or isolated die pads, are described. Some of the packages have leads with highly coplanar feet that protrude from a plastic body, facilitating mounting the packages on printed circuit boards using wave-soldering techniques.

Abstract: A method includes the steps of fabricating one or more semiconductor devices on a semiconductor wafer and depositing one or more conformal organic environmental protection layers over the semiconductor wafer using a vapor deposition process. By depositing the one or more conformal organic environmental protection layers using a vapor deposition process, thin film conformal organic environmental protection layers may be provided that offer excellent protection against water and oxygen ingress, thus increasing the ruggedness and reliability of the resulting semiconductor die.

Abstract: The present technology relates to a semiconductor device and a method of manufacturing the semiconductor device capable of suppressing warpage of the semiconductor device. A mold release agent 101 is applied to a side surface of an upper chip 11. According to this, when a sealing resin 31 for protecting a bump 21 is applied, the bump 21 between the upper chip 11 and a lower chip 12 is protected and a fillet-shaped protruding portion does not adhere to the side surface of the upper chip 11 due to the mold release agent 101, so that a gap 111 is formed. According to this, a stress to warp the lower chip 12 is not generated even when contraction associated with drying of the sealing resin 31 between the side surface of the upper chip 11 and an upper surface of the lower chip 12 occurs, so that it becomes possible to suppress the warpage. The present technology may be applied to the semiconductor device.

Abstract: A lead frame for a packaged integrated circuit (IC) device has a die receiving area and leads that extend outwardly from the die receiving area. The leads have an inner lead area proximate the die receiving area and an outer lead area distant from the die receiving area. Notches are formed in a surface of alternate ones of the leads, in the inner lead area proximate to the outer lead area. The notches facilitate bending of the alternate leads when the leads are subjected to a downward force by a mold tool, such that one set of leads lies in a first plane and another set lies in a second plane spaced from the first plane. The leads in the first plane can be formed into Gull Wing leads and the other set of leads into J-leads.

Abstract: A vehicle control device (100) includes: a housing (200) made of metal; a substrate (400) housed in the housing (200) and having a mounting surface (401) that faces an inner surface (201) of the housing (200); and an electronic component (501) mounted on the mounting surface (401). An adhesive (601) is disposed between the electronic component (501) and the inner surface (201) of the housing (200). The electronic component (501) has a contact portion (532) that contacts the heat radiation material (601) and a non-contact portion (531) that does not contact the heat radiation material (601). The contact portion (532) and the non-contact portion (531) are portions of the electronic component (501) on the side facing the inner surface (201) of the housing (200).

Abstract: Disclosed herein is a method of forming a device, comprising mounting a plurality of first interconnects on one or more first integrated circuit dies. One or more second integrated circuit dies are mounted on a first side of an interposer. The interposer is mounted at a second side to the first integrated circuit dies, the plurality of first interconnects disposed outside of the interposer. The interposer is mounted to a first side of a substrate by attaching the first interconnects to the substrate, the substrate in signal communication with one or more of the first integrated circuit dies through the first interconnects.

Abstract: A test matrix adapter device having a plurality of segments arranged in a plane, the respective segments have line-shaped and column-shaped frame sections, and the segments are connected to one another in a form-fitting manner by the frame sections. Semiconductor receiving devices are arranged within the segments, that each have a plurality of first contact surfaces that are spaced apart from one another. The semiconductor receiving device are form-fittingly connected by webs to the frame sections of an assigned segment. The semiconductor receiving device has a bottom side and a base region at least partially enclosed by a frame, and an outer side. The column-shaped frame sections have projections that have second contact surfaces that are connected by conductor tracks to the first contact surfaces. The semiconductor receiving device adapted to receive a packaged semiconductor component with terminal contacts and to connect the terminal contacts to the first contact surfaces.

Abstract: A secondary-side module comprises: a synchronous rectification controller that controls a synchronous rectification transistor; and a shunt regulator that generates a current that corresponds to the difference between an output voltage VOUT of a DC/DC converter and the target value of the output voltage, which are housed in a single package. The multiple pins to be connected to the shunt regulator are all laid out along a first side of the package.

Abstract: Systems and methods for lead frame locking design features are provided. In one embodiment, a method comprises: fabricating a lead frame for a chip package, the lead frame having a paddle comprising a step-out bottom locking feature profile across at least a first segment of an edge of the paddle that provides an interface with a mold compound; etching the paddle to have at least a second segment of the edge having either an extended-step-out bottom locking feature profile or an overhanging top locking feature profile; and alternating first and second segments along the edge of the paddle.

Abstract: A lead frame includes an outer frame. The outer frame includes: an upper surface; a lower surface that is opposite to the upper surface; a side surface between the upper surface and the lower surface; a first recess that is formed to extend from the upper surface to the side surface; a second recess that is formed to extend from the lower surface to the side surface; and a curved surface that is positioned between the side surface and a side wall of the first recess or between the side surface and a side wall of the second recess.

Abstract: A high-precision pressure sensor, having a first base body that has two electrically conductive layers and an insulation layer arranged between the two layers and electrically insulating the two layers from one another, an electrically conductive measurement membrane arranged on the first base body with inclusion of a pressure chamber, which measurement membrane can be charged with a pressure to be measured, and an electrode provided in the membrane-facing layer and spaced apart from the measurement membrane, which electrode together with the measurement membrane forms a capacitor having a capacitance that varies according to the pressure acting upon the measurement membrane.

Abstract: Methods and systems for a robust pillar structure for a semiconductor device contacts are disclosed, and may include processing a semiconductor wafer comprising one or more metal pads, wherein the processing may comprise: forming a second metal contact on the one or more metal pads; forming a pillar on the second metal contact, and forming a solder bump on the second metal contact and the pillar, wherein the pillar extends into the solder bump. The second metal contact may comprise a stepped mushroom shaped bump, a sloped mushroom shaped bump, a cylindrical post, and/or a redistribution layer. The semiconductor wafer may comprise silicon. A solder brace layer may be formed around the second metal contact. The second metal contact may be tapered down to a smaller area at the one or more metal pads on the semiconductor wafer. A seed layer may be formed between the second metal contact and the one or more metal pads on the semiconductor wafer. The pillar may comprise copper.

Abstract: A surface mount device includes at least one semiconductor device including an exposed top metal, an encapsulation layer partially encapsulating the at least one semiconductor device, and at least one end-termination cap on the surface mount device resulting in an electrical connection from a first side of the surface mount device to a second side of the surface mount device. In implementations, one process for fabricating the surface mount device includes dicing a finished device wafer in a scribe-line region, applying tape to a first side of the finished device wafer, backgrinding a second side of the finished device wafer, encapsulating the second side of the finished device wafer with an encapsulation layer, singulating the finished device wafer, and forming at least one wrap-around connection from a first side of the surface mount device to a second side of the surface mount device.

Abstract: One aspect relates to a power semiconductor module. The module includes a module housing, a substrate, and a semiconductor chip attached to the substrate. The semiconductor chip is disposed in the module housing. A dielectric first encapsulation is disposed in the module housing, in physical contact with both the semiconductor chip and the substrate and has a first modulus of elasticity. A dielectric second encapsulation is disposed in the module housing and has a second modulus of elasticity. The first encapsulation is a polymer and disposed between the substrate and the second encapsulation. The semiconductor chip is disposed between the first encapsulation and the substrate. Further, the first modulus of elasticity is greater than the second modulus of elasticity.

Abstract: A package includes an element placement region, a pair of leads and a resin molded body. The resin molded body holds the pair of leads. The resin molded body includes a black resin part, and a light reflective foam part arranged at least on a part of a surface of the black resin part in a light irradiation region configured to be irradiated by light from a light emitting element placed in the element placement region.

Abstract: A display device includes a display panel and a chip-on-film (COF) bonded to the display panel. The chip-on-film includes a film on which a driving chip is mounted, a plurality of film lines on the film, and at least one dummy pattern on the film between an adjacent pair of films in the plurality of film lines.

Abstract: A display device according to the invention includes: a first substrate that includes a flexible substrate, is segmented into a display area and a non-display area outside the display area, and includes a thin film transistor and an electroluminescent light-emitting element formed on the display area of the flexible substrate; and an IC chip that is bonded on the non-display area of the first substrate via an anisotropic conductive film, wherein the first substrate includes, between the flexible substrate and the anisotropic conductive film, at least one or more support layers whose plan view shape is larger than that of the IC chip and whose hardness is higher than that of the flexible substrate, and the IC chip is located inside the at least one or more support layers in a plan view.

Abstract: Various embodiments of mechanisms for forming a slotted metal pad over a TSV in substrate are provided. The dielectric structures in the slotted metal pad reduce dishing effect during planarization of the slotted metal pad. As a result, the risk of having metal stringers in upper metal level(s) caused by the dishing effect is greatly reduced.

Abstract: The present invention provides an integrated circuit (IC) package with stress releasing structure. The IC package comprises: a metal plane, a substrate, an IC chip, and an IC fill layer. The metal plane has at least one first etching line for separating the metal plane into a plurality of areas. The substrate is formed on metal layer. The IC chip is formed on the substrate, and the IC fill layer is formed around the IC chip. The at least one first etching line forms at least one half cut line in the metal plane and the substrate.

Abstract: A leadframe and air cavity packages formed using the leadframe are described. Using the leadframe, several air cavity packages can be quickly formed at one time. Further, electrical components can be placed within and interconnected with the air cavity packages easily by repositioning several devices at a time using the leadframe. After assembly, the air cavity packages can be separated from the leadframe. The air cavity packages can include a slug, a plastic frame that surrounds the slug and forms an air cavity, and a cover that encloses the air cavity. The air cavity package further includes one or more conductive leads of the leadframe that extend through the plastic frame and are exposed within the air cavity. The conductive leads can be relied upon to bond out components secured within the air cavity. Finally, the cover can be secured to enclose the air cavity.

Abstract: Heat-assisted wiring traces and a conductive support substrate are respectively formed on first and second surfaces of an insulating layer. Further, connection terminals electrically insulated from the support substrate and electrically respectively connected to the heat-assisted wiring traces are formed on the second surface of the insulating layer. Each connection terminal has an element connection portion, a pattern connection portion and a spread blocking portion. When a circuit element is connected to the element connection portion of the connection terminal by solder, spreading of a molten solder applied to the element connection portion to the pattern connection portion is blocked by the spread blocking portion.

Abstract: An electronic device according to the present disclosure includes a component, an electrode placed on the component, a conductor which includes a first conductor section, including an electrode contact surface in contact with the electrode, and two second conductor sections, electrically connected to two respective facing edges of the first conductor section to extend in respective directions away from the electrode and including respective inclined surfaces inclined in directions toward a central axis passing through a center of the electrode and perpendicular to the surface of the electrode, an insulator which is in contact with the two second conductor sections from sides opposite to the central axis and encloses the conductor and the electrode, and a case housing the component, the electrode, the conductor, and the insulator. A space without the insulator is defined between the two second conductor sections.

Abstract: A display device according to the invention includes: a first substrate that includes a flexible substrate, is segmented into a display area and a non-display area outside the display area, and includes a thin film transistor and an electroluminescent light-emitting element formed on the display area of the flexible substrate; and an IC chip that is bonded on the non-display area of the first substrate via an anisotropic conductive film, wherein the first substrate includes, between the flexible substrate and the anisotropic conductive film, at least one or more support layers whose plan view shape is larger than that of the IC chip and whose hardness is higher than that of the flexible substrate, and the IC chip is located inside the at least one or more support layers in a plan view.

Abstract: A LED module includes a substrate, a LED chip supported on the substrate, a metal wiring installed on the substrate, the metal wiring including a mounting portion on which the LED chip is mounted, an encapsulating resin configured to cover the LED chip and the metal wiring, and a clad member configured to cover the metal wiring to expose the mounting portion, the encapsulating resin arranged to cover the clad member.

Abstract: A housing for an electronic device and a method for manufacturing the housing are provided that combine metal and plastic in an aesthetically pleasing manner while meeting physical and technical requirements and specifications for the electronic device. Metal islands may be engaged with a plastic member so that projections of the plastic member are interlocked with corresponding recesses of formed between each of the metal islands. An exterior of the housing includes a surface of each of the metal islands and at least a portion of a surface of the plastic member. The interior of the housing includes another surface of the plastic member.

Abstract: A method that includes, among other things, forming first and second contact openings in a layer of insulating material that respectively expose a portion of first and second source/drain (S/D) regions of first and second transistors that are of the opposite type, forming first, second and third layers of material within each of the first and second contact openings, and forming an implant masking layer that masks the first contact opening while leaving the second contact opening exposed for further processing. The method also includes forming a contact ion implant region that is positioned at least partially in at least one of the first, second or third layers of material, removing the implant masking layer and forming a conductive material in both the first and second contact openings so as to define first and second MIS contact structures positioned in the first and second contact openings.

Abstract: A package apparatus comprises a first wiring layer, a metal layer, a conductive pillar layer, a passive component, a first molding compound layer, a second wiring layer, and a protection layer. The first wiring layer has a first surface and a second surface opposite to each other. The metal layer is disposed on the first surface of the first wiring layer. The conductive pillar layer is disposed on the second surface of the first wiring layer. The passive component is disposed on the second surface of the first wiring layer. The first molding compound layer is disposed within a part of the zone of the first wiring layer and the conductive pillar layer. The second wiring layer is disposed on the first molding compound layer and one end of the conductive pillar layer. The protection layer is disposed on the first molding compound layer and the second wiring layer.

Abstract: A semiconductor device includes a semiconductor chip, a lead arranged on a side portion of the semiconductor chip, and a wire, whose one end and another end are bonded to the semiconductor chip and the lead respectively, having a ball portion and a stitch portion wedged in side elevational view on the semiconductor chip and the lead respectively. An angle of approach of the wire to the lead is not less than 50°, and the length of the stitch portion is not less than 33 ?m.

Abstract: A semiconductor device includes a semiconductor chip, a resin mold portion sealing a component in which the semiconductor chip is included, and a bonding layer disposed between the resin mold portion and the component. The bonding layer is made of an organic resin that is disposed at an obverse side of the component, and includes a first layer bonded to the component and a second layer bonded to the resin mold portion. A loss coefficient tan ? of the first layer is smaller than a loss coefficient tan ? of the second layer within a temperature range of 200° C. to 250° C.

Abstract: Devices and methods of packaging semiconductor devices are disclosed. In some embodiments, a device includes a first semiconductor device and a second semiconductor device coupled to the first semiconductor device. An underfill material is disposed between the first semiconductor device and the second semiconductor device. The underfill material is also disposed on sidewalls of the first semiconductor device and the second semiconductor device. The underfill material has a first thickness on sidewalls of the first semiconductor device and a second thickness on sidewalls of the second semiconductor device. The second thickness is different than the first thickness.

Abstract: A packaged electronic device includes a package substrate, an electronic component die mounted to the package substrate, and an encapsulant bonded to a portion of the package substrate at a catechol group adhesion promoted interface that includes benzene rings bonded with the package substrate and the encapsulant.

Abstract: A lead frame includes an outer lead and a plating layer that covers a lower surface and side surfaces of the outer lead. The plating layer does not cover the upper surface of the outer lead. A frame base material is exposed from the plating layer at the upper surface of the outer lead.

Abstract: A lid including a lid body, and a wing portion, the wing portion being disposed on a die side of the lid body such that an edge of the wing portion is flexible independent from a portion of the lid body adjacent to the edge of the wing portion.