Abstract: Embodiments of the present disclosure provide an apparatus comprising a substrate layer, a metal ring structure disposed on the substrate layer, the metal ring structure having an opening defined therein, and a solder mask layer coupled to (i) the metal ring structure and (ii) the substrate layer through the opening defined in the metal ring structure, the solder mask layer having a solder mask opening defined therein, wherein an edge of solder mask material defining the solder mask opening overlaps a portion of the opening defined in the metal ring structure. Other embodiments may be described and/or claimed.

Abstract: A wafer for electronic component packages is used for manufacturing a plurality of electronic component packages, each of the plurality of electronic component packages including: a base incorporating a plurality of external connecting terminals; and at least one electronic component chip bonded to the base and electrically connected to the plurality of external connecting terminals. The wafer has a plurality of sets of external connecting terminals corresponding to the plurality of electronic component packages, a retainer for retaining the plurality of sets of external connecting terminals, and a coupling portion for coupling the plurality of sets of external connecting terminals to one another. The wafer includes a plurality of pre-base portions that will each be subjected to bonding of the at least one electronic component chip thereto and will be subjected to separation from one another later so that each of them will thereby become the base.

Abstract: An arrangement comprising: at least one power semiconductor module and a transport packaging. The power semiconductor module has a base element, a housing and connection elements. The transport packaging has a cover layer, an interlayer with a respective cutout assigned to the power semiconductor module, and a cover film. The cover layer is generally planar, and has a first main surface facing the power semiconductor module. The interlayer is arranged on the first main surface of the cover layer. The power semiconductor module is arranged in the cutout, on the first main surface of the cover layer, wherein the base element of the power semiconductor module is disposed on the first main surface of the cover layer. The cover film bears on and covers substantial parts of the housing of the power semiconductor module. The cover film is connected to the first main surface of the interlayer.

Abstract: An electronic package for interconnecting a high density pattern of conductors of an electronic device (e.g., semiconductor chip) of the package and a less dense pattern of conductors on a circuitized substrate (e.g., PCB), the package including in one embodiment but a single thin dielectric layer (e.g., Kapton) with a high density pattern of openings therein and a circuit pattern on an opposing surface which includes both a high density pattern of conductors and a less dense pattern of conductors. Conductive members are positioned in the openings to electrically interconnect conductors of the electronic device to conductors of the circuitized substrate when the package is positioned thereon. In another embodiment, the interposer includes a second dielectric layer bonded to the first, with conductive members extending through the second layer to connect to the less dense pattern of circuitized substrate conductors.

Abstract: A multi-phase voltage regulator is disclosed where each phase is comprised of an array of high and low side transistors that are integrated onto a single substrate. Further, a system of mounting the voltage regulator onto a flip chip and lead frame is disclosed wherein the source and drain lines form an interdigital pattern.

Abstract: A device includes a vertical power semiconductor chip having an epitaxial layer and a bulk semiconductor layer. A first contact pad is arranged on a first main face of the power semiconductor chip and a second contact pad is arranged on a second main face of the power semiconductor chip opposite to the first main face. The device further comprises an electrically conducting carrier attached to the second contact pad.

Abstract: A semiconductor device includes a semiconductor chip coupled to a substrate and a base plate coupled to the substrate. The base plate includes a first metal layer clad to a second metal layer. The second metal layer is deformed to provide a pin-fin or fin cooling structure.

Abstract: A plurality of chip sealing bodies stacked on a wiring substrate with a connection terminal. The chip sealing body includes a semiconductor chip having a semiconductor integrated circuit, a pad and a conductive connecting material, and a resin sealing the semiconductor chip. The chip sealing body is shaped into a cubic form in which a portion of the conductive connecting material except an end portion located on an external device side and all surfaces of semiconductor chip is sealed by the resin and the end portion of the conductive connecting material located on the external device side is exposed from the cubic form. A conductive bonding wire connects the end portions of the conductive connecting materials and the connection terminal respectively. A resin sealing material seals the plurality of chip sealing bodies, the conductive bonding wire, and the wiring substrate.

Abstract: A semiconductor package includes a package board, a pellet provided over the package board, and a protection member covering the package board and the pellet and including a hole penetrating the protection member.

Abstract: An interconnection structure includes a semiconductor chip, a mounting substrate on which the semiconductor chip is mounted, and a group of bonding wires provided to connect the semiconductor chip and the mounting substrate. The group of bonding wires includes: a first signal bonding wire contained in a first envelope and provided to propagate a signal; a first power supply bonding wire contained in the first envelope and applied with a first power supply voltage; and a second power supply bonding wire contained in a second envelope and applied with a second power supply voltage. One of the first envelope and the second envelope is arranged between the other of the first envelope and the second envelope and the mounting substrate.

Abstract: A pressure-contact power semiconductor module is arranged on a heat sink. The power semiconductor module is used with at least one substrate provided with conductor tracks and power semiconductor components. The module has a mounting body, on the underside of which the at least one substrate is arranged, and which is formed with cutouts. The module also includes a load connection element which is provided with contact feet that project away from strip sections and make pressure contact with the conductor tracks. The power semiconductor module additionally has a dimensionally stable cover, which covers the mounting body on all sides and is connected to the mounting body by means of snap-action latching connections. At least one pad element is restrained between the cover and the strip sections of the load connection elements.

Abstract: The present disclosure is directed to a semiconductor die having a chip outline boundary, a die seal, a row of input/output contact pads separated from the chip outline boundary by the die seal, a first row of solder bump connections positioned between the row of input/output contact pads and the die seal, and a second row of solder bump connections separated from the first row of solder bump connections by the row of input/output contact pads.

Abstract: A semiconductor device has a semiconductor chip in which a plurality of semiconductor components and a plurality of pads are arranged, a plurality of external connection contacts arranged in grids, and a plurality of wires for electrically connecting the pads and the external connection contacts. The pads include a plurality of pad groups including a pair of electrode pads connected to the plurality of semiconductor components in common and a plurality of signal pads respectively connected to the semiconductor components connected to the electrode pads. In each pad group, each signal pad is arranged adjacently to one of the electrode pads; and each wire extending from each signal pad is extended along a wire extended from the electrode pad adjacent to each signal pad.

Abstract: A layered chip package includes a main body, and wiring that includes a plurality of wires disposed on a side surface of the main body. The main body includes: a main part including a plurality of layer portions; a plurality of first terminals disposed on the top surface of the main part and connected to the wiring; and a plurality of second terminals disposed on the bottom surface of the main part and connected to the wiring. Each layer portion includes a semiconductor chip. The plurality of second terminals are positioned to overlap the plurality of first terminals as viewed in a direction perpendicular to the top surface of the main body. A plurality of pairs of first and second terminals that are electrically connected via the wires include a plurality of pairs of a first terminal and a second terminal that are positioned not to overlap each other.

Abstract: A double sided cooled power module package having a single phase leg topology includes two IGBT and two diode semiconductor dies. Each IGBT die is spaced apart from a diode semiconductor die, forming a switch unit. Two switch units are placed in a planar face-up and face-down configuration. A pair of DBC or other insulated metallic substrates is affixed to each side of the planar phase leg semiconductor dies to form a sandwich structure. Attachment layers are disposed on outer surfaces of the substrates and two heat exchangers are affixed to the substrates by rigid bond layers. The heat exchangers, made of copper or aluminum, have passages for carrying coolant. The power package is manufactured in a two-step assembly and heating process where direct bonds are formed for all bond layers by soldering, sintering, solid diffusion bonding or transient liquid diffusion bonding, with a specially designed jig and fixture.

Abstract: A power module includes one or more semiconductor power devices having a power overlay (POL) bonded thereto. A first heat sink is bonded to the semiconductor power devices on a side opposite the POL. A second heat sink is bonded to the POL opposite the side of the POL bonded to the semiconductor power devices. The semiconductor power devices, POL, first channel heat sink, and second channel heat sink together form a double side cooled power overlay module. The second channel heat sink is bonded to the POL solely via a compliant thermal interface material without the need for planarizing, brazing or metallurgical bonding.

Abstract: According to an exemplary embodiment, a bondwireless power module includes a common output pad coupling an emitter/anode node of a high side device to a collector/cathode node of a low side device. The bondwireless power module also includes a high side conductive clip connecting a collector of the high side device to a cathode of the high side device, and causing current to traverse through the high side conductive clip to another high side conductive clip in another power module. The bondwireless power module further includes a low side conductive clip connecting an emitter of the low side device to an anode of the low side device, and causing current to traverse through the low side conductive clip to another low side conductive clip in the another power module. The bondwireless power module can be a motor drive inverter module.

Abstract: Disclosed is a flipchip scheme where power and ground bumps are arranged in a striped configuration. Specifically, there are a plurality of lines of power bumps, and a plurality of lines of ground bumps. Each line of power bumps is interconnected by a mesh core power bus, and each line of ground bumps is interconnected by a mesh core ground bus. The busses are shorted across the bumps without having to use metal tab extensions. This arrangement provides that: signal routing can be provided between the lines of bumps; and/or the mesh core power busses can be provided as being wider in order to provide improved power mesh performance and/or in order to reduce or eliminate the metal required on the second top-most metal layer.

Abstract: A multi-chip package according to an aspect of this disclosure includes a plurality of multi-chips. Each of the multi-chips includes a lead configured to receive an external power supply voltage, and a pad circuit configured to reset an internal node to the level of a ground voltage and to generate chip address information by controlling the potential of the internal node based on the state of a connection between the pad circuit and the lead.

Abstract: The present invention provides a non-insulated type DC-DC converter having a circuit in which a power MOS•FET for a high side switch and a power MOS•FET for a low side switch are connected in series. In the non-insulated type DC-DC converter, the power transistor for the high side switch, the power transistor for the low side switch, and driver circuits that drive these are respectively constituted by different semiconductor chips. The three semiconductor chips are accommodated in one package, and the semiconductor chip including the power transistor for the high side switch, and the semiconductor chip including the driver circuits are disposed so as to approach each other.

Abstract: A first multilayer wiring structure has a first surface and a second surface positioned on an opposite side to the first surface, a first wiring pattern formed on the second surface side and a housing portion penetrating through the first multilayer wiring structure from the first surface to the second surface. An electronic component has an electrode pad. The electronic component is accommodated in the housing portion in a state that an electrode pad formation surface at the side where the electrode pad is formed is positioned on the second surface side of the first multilayer wiring structure. A second multilayer wiring structure has an insulating layer and a second wiring pattern which are stacked on the second surface of the first multilayer wiring structure and the electrode pad formation surface of the electronic component. The second wiring pattern is electrically connected to the first wiring pattern and the electrode pad.

Abstract: An integrated circuit with distributed power using through-silicon-vias (TSVs) is presented. The integrated circuit has conducting pads for providing power and ground located within the peripheral region of the top surface. A number of through-silicon-vias are distributed within the peripheral region and a set of TSVs are formed within the non-peripheral region of the integrated circuit. Conducting lines on the bottom surface are coupled between each peripheral through-silicon-via and a corresponding non-peripheral through-silicon-via. Power is distributed from the conducting pads to the TSVs within the non-peripheral region through the TSVs within the peripheral region, thus supplying power and ground to circuits located within the non-peripheral region of the integrated circuit chip.

Abstract: One exemplary disclosed embodiment comprises a semiconductor package including multiple transistors coupled to an exposed conductive clip. A driver integrated circuit (IC) may control the transistors to implement a buck converter. By exposing a top surface of the exposed conductive clip outside of a mold compound of the package, enhanced thermal performance is provided. Additionally, the conductive clip provides a short distance, high current carrying route between transistors of the package, providing higher electrical performance and reduced form factor compared to conventional designs with individually packaged transistors.

Abstract: According to one embodiment, there is a high frequency circuit having a multi-chip module structure, including a semiconductor substrate set formed with discrete transistors connected in series, a first dielectric substrate set formed with capacitors, and a second dielectric substrate set formed with strip lines.

Abstract: A semiconductor device and manufacturing method. One embodiment provides a semiconductor chip. An encapsulating material covers the semiconductor chip. A metal layer is over the semiconductor chip and the encapsulating material. At least one of a voltage generating unit and a display unit are rigidly attached to at least one of the encapsulating material and the metal layer.

Abstract: A packaged RF transistor device includes an RF transistor die including a plurality of RF transistor cells. Each of the plurality of RF transistor cells includes a control terminal and an output terminal. The RF transistor device further includes an RF input lead, and an input matching network coupled between the RF input lead and the RF transistor die. The input matching network includes a plurality of capacitors having respective input terminals. The input terminals of the capacitors are coupled to the control terminals of respective ones of the RF transistor cells.

Abstract: A power semiconductor module assembly is disclosed including a power semiconductor module comprising a load terminal electrically conductively joined to a contact conductor. Part of the heat materializing during operation of the power semiconductor module in the load terminal is dissipated by using a heat dissipating element.

Abstract: A layered chip package has a main body including pairs of layer portions, and wiring disposed on a side surface of the main body. Each layer portion includes a semiconductor chip. The pairs of layer portions include specific pairs of layer portions. Each of the specific pairs of layer portions includes a first-type layer portion and a second-type layer portion. The first-type layer portion includes electrodes each connected to the semiconductor chip and each having an end face located at the side surface of the main body on which the wiring is disposed, whereas the second-type layer portion does not include such electrodes. The specific pairs of layer portions are provided in an even number.

Abstract: Semiconductor dies are stacked offset from one another so that terminals located along two edges of each die are exposed. The two edges of the dies having terminals may be oriented in the same direction. Electrical connections may connect terminals on one die with terminals on another die, and the stack may be disposed on a wiring substrate to which the terminals of the dies may be electrically connected.

Abstract: A semiconductor device includes: a case with an opening formed thereat; a semiconductor element housed inside the case; a first conductor plate housed inside the case and positioned at one surface side of the semiconductor element; a second conductor plate housed inside the case and positioned at another surface side of the semiconductor element; a positive bus bar electrically connected to the first conductor plate, through which DC power is supplied; a negative bus bar electrically connected to the second conductor plate, through which DC power is supplied; a first resin member that closes off the opening at the case; and a second resin member that seals the semiconductor element, the first conductor plate and the second conductor plate and is constituted of a material other than a material constituting the first resin member.

Abstract: An organic light-emitting diode (OLED) module includes a substrate, a bus line, an organic light-emitting device layer, a plurality of conductive elements, and at least one conductive wire. The bus line is configured on the substrate. The organic light-emitting device layer is configured on the substrate and electrically connected to the bus line. The conductive elements are configured on the substrate and electrically connected to the bus line. The conductive wire is configured next to the conductive elements and electrically connected to the conductive elements.

Abstract: The present invention adds one or more thick layers of polymer dielectric and one or more layers of thick, wide metal lines on top of a finished semiconductor wafer, post-passivation. The thick, wide metal lines may be used for long signal paths and can also be used for power buses or power planes, clock distribution networks, critical signal, and re-distribution of I/O pads.

Abstract: A redistributed lead frame for use in a molded plastic semiconductor package is formed from an electrically conductive substrate by a sequential metal removal process. The process includes patterning a first side of the substrate to form an array of lands separated by channels; disposing a first molding compound within those channels; patterning a second side of the substrate to form an array of chip attach sites and routing circuits electrically interconnecting the array of lands and the array of chip attach sites; directly electrically interconnecting input/output pads on a semiconductor device to the chip attach sites; and encapsulating the semiconductor device, the array of chip attach sites and the routing circuits with a second molding compound. This process is particularly suited for the manufacture of chip scale packages and very thin packages.

Abstract: To improve the performance and reliability of semiconductor devices. For the semiconductor chip CP1, power MOSFETs Q1 and Q2 for the switch, a diode DD1 for detecting the heat generation of the power MOSFET Q1, a diode DD2 for detecting the heat generation of the power MOSFET Q2, and plural pad electrodes PD are formed. The power MOSFET Q1 and the diode DD1 are arranged in a first MOSFET region RG1 on the side of a side SD1, and the power MOSFET Q2 and the diode DD2 are arranged in a second MOSFET region RG2 on the side of a side SD2. The diode DD1 is arranged along the side SD1, the diode DD2 is arranged along the side SD2, and all pad electrodes PD other than the pad electrodes PDS1 and PDS2 for the source are arranged along a side SD3 between the diodes DD1 and DD2.

Abstract: A semiconductor device and a manufacturing method for preventing mechanical and thermal damage to the semiconductor chip. A laser beam welds a first connection pad formed on a first external lead to a first electrode formed on the surface of the semiconductor chip. A first connection hole is formed in the first connection pad, and the first connection hole overlaps the first connection electrode. A laser beam irradiates an area including the first connection hole, and the first connection pad in a portion around the first connection hole is melted to form a melting section, that is welded to the first connection electrode to easily form a semiconductor device with more excellent electrical characteristics.

Abstract: Provided is a high-power device having a thermocouple (thermoelectric couple) for measuring the temperature of a transistor constituting a high-power device. The high-power device includes a heating element, a thermocouple formed adjacent to the heating element, and a dielectric body formed between the heating element and the thermocouple.

Abstract: Methods and structures related to packaging a chip are disclosed. In one embodiment, a chip package structure includes: (i) a chip having a plurality of first and second contact pads thereon; (ii) a lead frame having a plurality of pins for external connection to the package structure, where the chip is disposed on the lead frame; (iii) a plurality of first bonding wires for connecting the first contact pads to the lead frame; and (iv) a plurality of second bonding wires for connecting the second contact pads to the plurality of pins on the lead frame.

Abstract: This semiconductor device has a frame including a bed portion on which a semiconductor chip is mounted, lead groups arranged in an outer peripheral portion, first bus bars, second bus bars and a rectifying bus bar. The first bus bars and the second bus bars are arranged between the bed portion and the lead groups. The rectifying bus bar is arranged in a region where the second bus bar is not arranged. Wire bonding is not performed on the rectifying bus bar. The rectifying bus bar includes a third bus bar having at least one end joined to a lead or a hanging pin and/or a fourth bus bar formed by extending the first bus bar in an outer peripheral direction in which the leads are arranged. The semiconductor device is provided in which deformation and damage of bonding wires when molding a resin sealed body are prevented.

Abstract: A method for packaging micromachined devices fabricated by MEMS and semiconductor process is disclosed in this invention. The method employed etching technique to etch a trench surrounding the micromachined components on each chip of the first wafer down to the bottom interconnection metal layer. The said trench can accommodate the solder of flip-chip packaging. On each chip of the second wafer, or called as the second chip, a surrounding copper pillar wall corresponding to the trench on the first chip is deposited. By wafer-level packaging, the trench on the first chip is aligned to the pillar wall, and then bonded together with elevated temperature. The face-to-face chamber formed between two chips can allow the movement of the micromachined structures. Further, the signal or power connections between two chips can be established by providing several discrete pillar bumps.

Abstract: An integrated circuit package configured to incorporate a lead frame and methods for its making are is described. The package comprising an IC with aluminum bond pads in communication with circuitry of the die with lead frame with silver bond pads. The package having gold bumps bonded between the aluminum bond pad of the die and the silver bond pad of the lead frame. The package including an encapsulant envelope and including various materials and bond pad structures and constructed in a manner formed by thermosonically or thermocompressionally bonding the gold balls to the bond pads. Also, disclosed are methods of making the package.

Abstract: A semiconductor module includes a semiconductor device including a mounting board, a semiconductor chip disposed at a first surface of the mounting board, a first inductor which is provided at a surface side of the semiconductor chip not facing the mounting board in order to perform communication between the semiconductor chip and the outside, a sealing resin layer which is formed at the first surface of the mounting board in order to seal the semiconductor chip, and a recess or an opening which is provided in the sealing resin layer and which includes the inductor inside when seen in a plan view; and a second inductor, which is located in the recess or the opening of the semiconductor device so that the second inductor performs communication with the first inductor.

Abstract: A ramp-stack chip package is described. This chip package includes a vertical stack of semiconductor dies or chips that are offset from each other in a horizontal direction, thereby defining a terrace with exposed pads. A high-bandwidth ramp component, which is positioned approximately parallel to the terrace, is electrically and mechanically coupled to the exposed pads. For example, the ramp component may be coupled to the semiconductor dies using: solder, microsprings and/or an anisotropic conducting film. Furthermore, each of the semiconductor dies includes a static bend so that an end segment of each of the semiconductor dies is parallel to the direction and is mechanically coupled to the ramp component. These end segments may facilitate high-bandwidth communication of signals between the chips and the ramp component, for example, via proximity communication.

Abstract: In some embodiments, provided is an integrated circuit with a first die coupled to a second die. The second die has through-silicon vias disposed through it to provide power references to the first die. The through-silicon vias are laterally re-positionable without inhibiting circuit sections in the second die.

Abstract: A wafer-level packaged semiconductor device is described. In an implementation, the device includes one or more self-assembled resilient leads disposed on an integrated circuit chip. Each of the resilient leads are configured to move from a first position wherein the resilient lead is held adjacent to the chip and a second position wherein the resilient lead is extended away from the chip to interconnect the chip to a printed circuit board. A guard is provided to protect the resilient leads when the resilient leads are in the first position. One or more attachment bumps may also be furnished to facilitate attachment of the device to the printed circuit board.

Abstract: A semiconductor device includes: a semiconductor chip mounting substrate, a control circuit board, a power terminal holder and a semi-fixing member. The semiconductor chip mounting substrate includes a substrate, a semiconductor chip provided on a first major surface of the substrate, and a first and second semiconductor chip connection electrodes. The control circuit board is provided generally in parallel to the first major surface and includes a control circuit, a control signal terminal connected to the control circuit, and a through hole extending in a direction generally perpendicular to the first major surface. The power terminal holder is provided on opposite side of the control circuit board from the semiconductor chip mounting substrate and includes a power terminal. The semi-fixing member includes a shank portion and an end portion. The shank portion is fixed to the power terminal holder and penetrates through the through hole.

Abstract: A heterogeneous three-dimensional (3-D) stacked apparatus is provided that includes multiple layers arranged in a stacked configuration with a lower layer configured to receive a board-level voltage and one or more upper layers stacked above the lower layer. The heterogeneous 3-D stacked apparatus also includes multiple tiles per layer, where each tile is designed to receive a separately regulated voltage. The heterogeneous 3-D stacked apparatus additionally includes at least one layer in the one or more upper layers with voltage converters providing the separately regulated voltage converted from the board-level voltage.

Abstract: A zipper structure includes a first contiguous full-dense-mesh (FDM) array of a first circuit in top metal and a second contiguous FDM array of a second circuit in top-1 metal, a third contiguous FDM array of the second circuit in top metal and a fourth contiguous FDM array of the first circuit in top-1 metal, and a signal line, such that portions of the first contiguous FDM array and the second contiguous FDM array overlap and portions of the third contiguous FDM array and the fourth contiguous FDM array overlap. The Zipper structure facilitates connecting the first contiguous FDM array to the fourth contiguous FDM array by vias and a first connector lines and the second contiguous FDM array to the third contiguous FDM array by vias and a second connector lines, such that portion of the signal line overlaps with the first connector lines and the second connector lines.

Abstract: A semiconductor device such as a field-effect transistor, improved to reduce device resistance, comprises a leadframe which includes a die paddle integral with a first set of leads and a second set of leads that is electrically isolated from the first set, a semiconductor die having its lower surface positioned on, and electrically connected to, the die paddle, and a conductive layer on the upper surface of the die. At least one electrically conductive wire, preferably plural wires, extend laterally across the second surface of the semiconductor die, are in electrical contact with the conductive layer, and interconnect corresponding second leads on opposite sides of the die. The plural wires may be welded to leads in succession by alternate ball and wedge bonds on each lead. The conductive layer may be an aluminized layer on which is formed a thin layer a solderable material, such as tin. A solder is deposited on the tin layer, enmeshing the wires.

Abstract: In the semiconductor device, a control power MOSFET chip 2 is disposed on the input-side plate-like lead 5, and the drain terminal DT1 is formed on the rear surface of the chip 2, and the source terminal ST1 and gate terminal GT1 are formed on the principal surface of the chip 2, and the source terminal ST1 is connected to the plate-like lead for source 12. Furthermore, a synchronous power MOSFET chip 3 is disposed on the output-side plate-like lead 6, and the drain terminal DT2 is formed on the rear surface of the chip 3 and the output-side plate-like lead 6 is connected to the drain terminal DT2. Furthermore, source terminal ST2 and gate terminal GT2 are formed on the principal surface of the synchronous power MOSFET chip 3, and the source terminal ST2 is connected to the plate-like lead for source 13. The plate-like leads for source 12 and 13 are exposed, and therefore, it is possible to increase the heat dissipation capability of the MCM 1.

Abstract: A multi-chip device which includes a plurality of integrated circuit die disposed one over another. Each integrated circuit die includes one or a plurality of bond pads. One or a plurality of conductors are disposed to electrically couple the bond pads of vertically adjacent integrated circuit die. Each conductor is designed, calculated, specified and/or predetermined to have a length so as to behave as a segment in a multi-drop transmission line. The multi-drop transmission line may be terminated at one end or utilized in a flow-through approach. In one embodiment, an integrated circuit die may be horizontally offset with respect to a vertically adjacent integrated circuit die to expose the periphery region. In another embodiment, each integrated circuit die may be stacked and aligned in a vertical column. In this embodiment, a spacer such as a thermally conductive spacer is disposed between each integrated circuit die in the stack.