Abstract: A packaging substrate, a packaged semiconductor device, a computing device and methods for forming the same are provided. In one embodiment, a packaging substrate is provided that includes a packaging structure having a chip mounting surface and a bottom surface. The packaging structure has at a plurality of conductive paths formed between the chip mounting surface and the bottom surface. The conductive paths are configured to provide electrical connection between an integrated circuit chip disposed on the chip mounting surface and the bottom surface of the packaging structure. The packaging structure has an opening formed in the chip mounting surface proximate a perimeter of the packaging structure. A stiffening microstructure is disposed in the opening and is coupled to the packaging structure.

Abstract: Semiconductor devices and methods for forming a semiconductor device are disclosed. The semiconductor device includes a die. The die includes a die substrate having first and second major surfaces. The semiconductor device includes a power module disposed below the second major surface of the die substrate. The power module is electrically coupled to the die through silicon via (TSV) contacts.

Abstract: An integrated circuit system having an interposer and an integrated circuit with first and second bond pads, the integrated circuit die bonded to the interposer using the first bond pads. The integrated circuit having circuit blocks, that operate at different operating voltages and voltage regulator modules die bonded to the second bond pads of the integrated circuit. The voltage regulator modules converting a power supply voltage to the operating voltage of a respective circuit block and supply the respective operating voltage to the circuit block via the second bond pads.

Abstract: A semiconductor device comprises an aluminum alloy lead-frame with a passivation layer covering an exposed portion of the aluminum alloy lead-frame. Since aluminum alloy is a low-cost material, and its hardness and flexibility are suitable for deformation process, such as punching, bending, molding and the like, aluminum alloy lead frame is suitable for mass production; furthermore, since its weight is much lower than copper or iron-nickel material, aluminum alloy lead frame is very convenient for the production of semiconductor devices.

Abstract: A light emitting die package is provided which includes a metal substrate having a first surface and a first conductive lead on the first surface. The first conductive lead is insulated from the substrate by an insulating film. The first conductive lead forms a mounting pad for mounting a light emitting device. The package includes a metal lead electrically connected to the first conductive lead and extending away from the first surface.

Abstract: A storage element is provided in a semiconductor chip, and an inductor and a driver circuit are provided in another semiconductor chip. An external terminal is a contact type terminal, and at least some external terminals are a power supply terminal and a ground terminal. A sealing resin layer is formed over a first surface of an interconnect substrate and seals the semiconductor chips but does not cover the external terminal. The inductor is formed at a surface of the semiconductor chip not facing the interconnect substrate.

Abstract: A switching module includes a series-connected unit of a first flowing restriction element and a second flowing restriction element, the first flowing restriction element having an opening and closing function of opening and closing a flowing path of current, and the second flowing restriction element having at least one of a rectifying function of restricting the direction in which current flows and the opening and closing function, and a snubber circuit connected to the series-connected unit in parallel. A first wiring line connecting between the first flowing restriction element and the snubber circuit, a second wiring line connecting between the second flowing restriction element and the snubber circuit, a third wiring line connecting between the first flowing restriction element and the second flowing restriction element, the first flowing restriction element, the second flowing restriction element, and the snubber circuit are formed substantially integrally with each other by using an insulator.

Abstract: A semiconductor structure includes a plurality of thermal vias and a heat dissipation layer disposed at a periphery of a back surface of a lower chip in a stacked-chip package. This arrangement improves solderability of a subsequently-bonded heat sink. Additionally, the thermal vias and the heat dissipation layer provide an improved thermal conduction path for enhancing heat dissipation efficiency of the semiconductor structure. A method for manufacturing the semiconductor structure is also provided.

Abstract: A semiconductor device includes a lower wiring layer, having signal lines and power supply lines extending in a Y-direction; an upper wiring layer having signal lines and power supply lines extending in an X-direction; via conductors provided in first overlap regions where corresponding signal lines overlap each other; and via conductors provided in second overlap regions where corresponding power supply lines overlap each other. The width in the X-direction of the first regions is wider than the widths in the X-direction of the second regions. Therefore, in the first regions, a plurality of via conductors can be provided. Moreover, the power supply lines are divided in the Y-direction to avoid interference with the first regions. On a plurality of lower-layer lines, two vias are placed at a minimum pitch containing one via.

Abstract: A wire bond free power module assembly consists of a plurality of individual thin packages each consisting of two DBC wafers which sandwich one or more semiconductor die. The die electrodes and terminals extend through one insulation covered end of the wafer sandwich and the outer sides of the sandwiches are the outer copper plates of the DBC wafers which are in good thermal communication with the semiconductor die but are electrically insulated therefrom. The plural packages may be connected in parallel by lead frames on the terminals and the packages are stacked with a space between them to expose both sides of all packages to a cooling medium, either the fingers of a conductive comb or a fluid heat exchange medium.

Abstract: According to an exemplary embodiment, a stacked half-bridge package includes a control transistor having a control drain for connection to a high voltage input, a control source coupled to an output terminal, and a control gate for being driven by a driver IC. The stacked half-bridge package also includes a sync transistor having a sync drain for connection to the output terminal, a sync source coupled to a low voltage input, and a sync gate for being driven by the driver IC. A current carrying layer is situated on the sync drain; the control transistor and the sync transistor being stacked on one another, where the current carrying layer provides a high current connection between the sync drain and the control source.

Abstract: A power module according to the present invention is a power module configured such that a power device chip is arranged within an outer casing and an electrode of the power device chip is connected to an external electrode that is integrated with the outer casing. The power module includes: a heat spreader fixed inside the outer casing; the power device chip solder-bonded on the heat spreader; an insulating dam formed on the heat spreader so as to surround the power device chip; and an internal main electrode having one end thereof solder-bonded to the electrode of the power device chip and the other end thereof fixed to an upper surface of the dam. The external electrode and the other end of the internal main electrode are electrically connected to each other by wire bonding.

Abstract: A driver IC which is operated by a power supply system insulated from a control IC is mounted in the vicinity of a switching element on a first conductor pattern. A second conductor pattern connected to a source terminal or an emitter terminal of the switching element is electrically connected to a third conductor pattern on which the driver IC is mounted. A ground terminal of the driver IC is electrically connected to the third conductor pattern, and a drive terminal of the driver IC is electrically connected to a gate terminal or a base terminal of the switching element.

Abstract: Power switching circuitry has a heat absorbing structure, and a heat conductive substrate having power switching components on a first surface and a second surface adjacent to the heat absorbing structure. Electrically conductive members, comprising first and second members, are on the first surface and extend along a first axis orthogonal to the heat conductive substrate. The second portion is more remote from the heat conductive substrate, and has a smaller cross-sectional area than, the first portion to define a shoulder region orthogonal to the first axis. A circuit board is located on the shoulder regions, with the second portions extending through the circuit board. An urging mechanism urges the circuit board against the shoulder regions, whereby the electrically conductive members provide a current path between the heat conductive substrate and the circuit board, and urge the heat conductive substrate into thermal contact with the heat absorbing structure.

Abstract: A substrate structure and a package structure using the same are provided. The substrate structure includes a number of traces, a substrate core and a number of first metal tiles. The substrate core has a first surface and a second surface opposite to the first surface. The first metal tiles are disposed on one of the first surface and the second surface, the minimum pitch between adjacent two of the first metal tiles is the minimum process pitch.

Abstract: A microelectronic assembly can include a circuit panel having first and second panel contacts at respective first and second surfaces thereof, and first and second microelectronic packages each having terminals mounted to the respective panel contacts. Each package can include a microelectronic element having a face and contacts thereon, a substrate having first and second surfaces, and terminals on the second surface configured for connecting the package with an external component. The terminals can include first terminals at positions within first and second parallel grids. The first terminals can be configured to carry address information usable by circuitry within the package to determine an addressable memory location from among all the available addressable memory locations of a memory storage array within the microelectronic element. Signal assignments of the first terminals in the first grid can be a mirror image of signal assignments of the first terminals in the second grid.

Abstract: A microelectronic package can include a substrate and a microelectronic element having a rear face facing a first surface of the substrate, a front face, and a column of element contacts extending in a first direction. The microelectronic element can include stacked electrically interconnected semiconductor chips. Edges of the microelectronic element can define an axial plane extending in the first direction and a third direction normal to the rear face. The package can include columns of terminals extending in the first direction at a second surface of the substrate. The terminals can include first terminals exposed in a central region of the second surface and configured to carry address information usable by circuitry within the package to determine an addressable memory location. The central region may have a width not more than 3.5 times a minimum pitch between adjacent terminal columns. The axial plane can intersect the central region.

Abstract: A microelectronic package can include a microelectronic element having a face and a plurality of element contacts thereon, a substrate having first and second surfaces, and terminals on the second surface configured for connecting the package with at least one external component. The substrate can have substrate contacts on the first surface facing the element contacts of the microelectronic element and joined thereto. The terminals can include first terminals arranged at positions within first and second parallel grids. The first terminals of each grid can be configured to carry address information usable by circuitry within the microelectronic package to determine an addressable memory location from among all the available addressable memory locations of a memory storage array within the microelectronic element. The signal assignments of the first terminals in the first grid can be a mirror image of the signal assignments of the first terminals in the second grid.

Abstract: A microelectronic assembly can include a microelectronic package connected with a circuit panel. The package has a microelectronic element having a front face facing away from a substrate of the package, and electrically connected with the substrate through conductive structure extending above the front face. First terminals provided in first and second parallel grids or in first and second individual columns can be configured to carry address information usable to determine an addressable memory location from among all the available addressable memory locations of the memory storage array. The first terminals in the first grid can have signal assignments which are a mirror image of the signal assignments of the first terminals in the second grid.

Abstract: A microelectronic assembly can include a circuit panel having first and second surfaces and panel contacts at each surface, and first and second microelectronic packages having terminals mounted to the panel contacts at the first and second surfaces, respectively. The circuit panel can electrically interconnect terminals of the first package with corresponding terminals of the second package. Each package can include a substrate having first and second surfaces, a microelectronic element, conductive structure extending above a front face of the microelectronic element, and parallel columns of terminals at the second surface. The terminals of each package can include first terminals in a central region of the respective second surface and configured to carry address information usable by circuitry within the package to determine an addressable memory location within the respective microelectronic element.

Abstract: Methods of forming microelectronic structures are described. Embodiments of those methods include attaching a patch structure to an interposer by thermal compression bonding, forming an underfill around an array of interconnect structures disposed on a top surface of the interposer, curing the underfill, and then attaching a die to the patch structure.

Abstract: A semiconductor package includes a plurality of electrical connectors, a semiconductor die having core logic, at least two pairs of core logic input-power and output-power pads, and a plurality of input/output signal pads that carry signals to and from the core logic. Each pad of the semiconductor die has an electrical connector of the plurality of electrical connectors extending therefrom. The semiconductor package also includes a package substrate having at least two pairs of input-power and output-power contact pads, a plurality of input/output signal contact pads, a first metal redistribution layer, and a second metal redistribution layer. The first metal redistribution layer provides a first electrical potential to each of the input-power contact pads, and the second metal redistribution layer provides a second electrical potential to each of the output-power contact pads. Each contact pad has an electrical connector of the plurality of electrical connectors extending therefrom.

Abstract: A layered chip package includes a main body and wiring. The main body has a main part. The main part has a top surface and a bottom surface and includes a plurality of layer portions that are stacked. The wiring includes a plurality of lines passing through all the plurality of layer portions. Each layer portion includes a semiconductor chip and a plurality of electrodes. The semiconductor chip has a first surface, and a second surface opposite thereto. The plurality of electrodes are disposed on a side of the first surface of the semiconductor chip. The plurality of layer portions include two or more pairs of first and second layer portions in each of which the first and second layer portions are arranged so that the first or second surfaces of the respective semiconductor chips face each other. The plurality of electrodes include a plurality of first connection parts and a plurality of second connection parts.

Abstract: A semiconductor device has a semiconductor substrate. The semiconductor device has a plurality of LSI regions that are formed on the semiconductor substrate and are provided with a first power supply wiring layer including a first power supply wire. The semiconductor device has a first power supply terminal formed on the semiconductor substrate. The semiconductor device has a second power supply wiring layer including a second power supply wire that electrically connects the first power supply wire and the first power supply terminal, the second power supply wiring layer is formed in a dicing region between the LSI regions along a dicing line that separates the LSI regions and the dicing line region. A first barrier metal film is formed at least in the LSI regions at a boundary between the first power supply wire and the second power supply wire.

Abstract: A contactless communication medium which can prevent invasion of static electricity and has an outer surface which can satisfy requirements on the flatness thereof. The contactless communication medium has a sealing member including an insulating layer and a conductive layer provided in a stacked manner and having a shape covering an IC module is located such that the insulating layer is on the IC module side. Owing to this, static electricity coming from outside is diffused by the conductive layer and blocked by the insulating layer. Thus, adverse influence of the static electricity on the IC module is prevented. The contactless communication medium can also satisfy the requirements on the flatness of an outer surface thereof.

Abstract: A microelectronic element having a memory storage array has a front face facing away from a substrate of a microelectronic package, and is electrically connected with the substrate through conductive structure extending above the front face. First terminals are disposed at locations within first and second parallel grids of the package. The first terminals of each grid are configured to carry address information usable to determine an addressable memory location from among all the available addressable memory locations of the memory storage array. The first terminals in the first grid have signal assignments which are a mirror image of the signal assignments of the first terminals in the second grid.

Abstract: An object of the present invention is to sufficiently supply power to three-dimensionally stacked LSI chips and to dispose common through vias in chips of different types. Also, another object is to propose a new test method for power-supply through silicon vias.

Abstract: A semiconductor unit includes an insulation layer, a conductive layer bonded to one side of the insulation layer, a semiconductor device mounted on the conductive layer, a cooler thermally coupled to the other side of the insulation layer, a first bus bar having a bonding surface bonded to the semiconductor device or the conductive layer and a non-bonding surface that is the part of the first bus bar other than the bonding surface, and a second bus bar having a bonding surface bonded to the semiconductor device or the conductive layer and a non-bonding surface that is the part of the second bus bar other than the bonding surface. The second bus bar has a greater ratio of the area of the bonding surface to the area of the non-bonding surface than the first bus bar. The second bus bar has a lower electric resistance than the first bus bar.

Abstract: One or more heating elements are disposed on a semiconductor substrate proximate a temperature sensitive circuit disposed on the substrate (e.g., bandgap circuit, oscillator). The heater element(s) can be controlled to heat the substrate and elevate the temperature of the circuit to one or more temperature points. One or more temperature measurements can be made at each of the one or more temperature points for calibrating one or more reference values of the circuit (e.g., bandgap voltage).

Abstract: Transmission lines with a first dielectric material separating signal traces and a second dielectric material separating the signal traces from a ground plane. In embodiments, mutual capacitance is tuned relative to self-capacitance to reverse polarity of far end crosstalk between a victim and aggressor channel relative to that induced by other interconnect portions along the length of the channels, such as inductively coupled portions. In embodiments, a transmission line for a single-ended channel includes a material of a higher dielectric constant within the same routing plane as a microstrip or stripline conductor, and a material of a lower dielectric constant between the conductor and the ground plane(s). In embodiments, a transmission line for a differential pair includes a material of a lower dielectric constant within the same routing plane as a microstrip or stripline conductors, and a material of a higher dielectric constant between the conductors and the ground plane(s).

Abstract: A packaged semiconductor die has a die support mounting surface mounted to a die support having external connectors. A die connection pad surface opposite to die supporting mount surface has associated die connection pads that are circuit nodes of the semiconductor die. The die connection pad surface also has a power rail pad. The power rail pad has a surface area larger than surface areas of the die connection pads. Bond wires electrically couple the power rail pad to two or more of the die connection pads.

Abstract: A semiconductor die substrate panel is disclosed including a minimum kerf width between adjoining semiconductor package outlines on the panel, while ensuring electrical isolation of plated electrical terminals. By reducing the width of a boundary between adjoining package outlines, additional space is gained on a substrate panel for semiconductor packages.

Abstract: A power module includes a substrate including an insulating member and a patterned metallization on the insulating member. The patterned metallization is segmented into a plurality of spaced apart metallization regions. Adjacent ones of the metallization regions are separated by a groove which extends through the patterned metallization to the insulating member. A first power transistor circuit includes a first power switch attached to a first one of the metallization regions and a second power switch attached to a second one of the metallization regions adjacent a first side of the first metallization region. A second power transistor circuit includes a third power switch attached to the first metallization region and a fourth power switch attached to a third one of the metallization regions adjacent a second side of the first metallization region which opposes the first side. The second power transistor circuit mirrors the first power transistor circuit.

Abstract: A clock architecture for a Structured ASIC chip, manufactured using a CMOS process is shown. A via-configurable logic block (VCLB) architecture in the Structured ASIC has a core region containing memory and logic cells arranged in columns that are supplied by a clock network having a global clock network tree and a low-level clock mesh to distribute the global clock signal in a repeating pattern. The clock mesh has a fishbone configuration in outline and allows for scalable expansion of the clock network. In one embodiment 36 global clocks may be provided to the Structured ASIC, with four clocks per logic cell. The VCLB Structured ASIC chip is manufactured on a 28 nm CMOS process lithographic node, having several metal layers but preferably is programmable on a single via layer.

Abstract: A semiconductor unit includes a first conductive layer, a second conductive layer electrically insulated from the first conductive layer, a first semiconductor device mounted on the first conductive layer, a second semiconductor device mounted on the second conductive layer, a first bus bar for electrical connection of the second semiconductor device to the first conductive layer, and a second bus bar for electrical connection of the first semiconductor device to one of the positive and negative terminals of a battery. The first bus bar is disposed in overlapping relation to the second bus bar in such a manner that mold resin fills between the first bus bar and the second bus bar.

Abstract: A semiconductor device is improved in reliability. A switching power MOSFET and a sense MOSFET for sensing a current flowing in the power MOSFET, which is smaller in area than the power MOSFET, are formed in one semiconductor chip. The semiconductor chip is mounted over a chip mounting portion via a conductive bonding material, and sealed in a resin. Over the main surface of the semiconductor chip, a metal plate is bonded to a source pad electrode of the power MOSFET. In the plan view, the metal plate does not overlap a sense MOSFET region where the sense MOSFET is formed. The metal plate is bonded to the source pad electrode so as to surround three of the sides of the sense MOSFET region.

Abstract: There is offered a semiconductor integrated circuit provided with a function to electrically identify a location where a defect such as chipping of an LSI die or separation of resin is caused. Corresponding to each of the four corners of a semiconductor substrate, each of L-shaped first through fourth peripheral wirings having a first end and a second end is disposed on a periphery of the semiconductor substrate. The first end of each of the first through fourth peripheral wirings is connected with a power supply wiring. Each of first through fourth detection circuits detects breaking of corresponding each of the first through fourth peripheral wirings in response to a voltage at the second end of corresponding each of the first through fourth peripheral wirings, and outputs corresponding each of first through fourth detection signals to corresponding each of output pads.

Abstract: A semiconductor package structure is provided, including: a semiconductor chip having electrode pads disposed thereon and metal bumps disposed on the electrode pads; an encapsulant encapsulating the semiconductor chip; a dielectric layer formed on the encapsulant and having a plurality of patterned intaglios formed therein for exposing the metal bumps; a wiring layer formed in the patterned intaglios of the dielectric layer and electrically connected to the metal bumps; and a metal foil having a plurality of metal posts disposed on a surface thereof such that the metal foil is disposed on the encapsulant with the metal posts penetrating the encapsulant so as to extend to the inactive surface of the semiconductor chip. Compared with the prior art, the present invention reduces the overall thickness of the package structure, increases the electrical transmission efficiency and improves the heat dissipating effect.

Abstract: A chip-housing module including a carrier configured to carry one or more chips; the carrier including: a first plurality of openings, wherein each opening of the first plurality of openings is separated by a first pre-determined distance, and is configured to receive a chip connection for providing a voltage lying within a first range of voltage values to a chip; a second plurality of openings, wherein each opening of the second plurality of openings is separated by a second pre-determined distance, and configured to receive a chip connection for providing a voltage lying within a second range of voltage values to a chip; and wherein a pair of openings consisting of one opening of the first plurality of openings and one opening of the second plurality of openings is separated by a distance different from at least one of the first pre-determined distance and the second pre-determined distance, is provided.

Abstract: A method and a system for routing electrical connections are disclosed. A semiconductor device includes a first semiconductor chip and a routing plane having a plurality of routing lines. A first connecting line is electrically coupled to the first semiconductor chip and one of the plurality of routing lines and a second connecting line is electrically coupled to the one of the plurality of routing lines and to one of a second semiconductor chip or a first external contact element.

Abstract: A semiconductor integrated circuit chip mounted on a substrate by flip chip bonding includes: a plurality of electrode pads; a corner portion of a flat periphery of an inner layer; a first linear region adjoining one side of the corner portion; a second linear region adjoining another side of the corner portion; and a third linear region adjoining a side of the first linear region opposite to the side adjoining the corner portion. A circuit core placeable region is provided in at least part of the corner portion and the first linear region. A plurality of IO cells connected to the electrode pads are arranged in the second and third linear regions. The IO cells in the second linear region are connected to the electrode pads arranged inwardly in n rows×n columns from a corner of the chip above the corner portion.

Abstract: A power semiconductor module is provided in which power semiconductor chips with an aluminum-based chip metallization and power semiconductor chips with a copper-based chip metallization are included in the same module, and operated at different barrier-layer temperatures during use.

Abstract: A packaged RF transistor device includes an RF transistor die including a plurality of RF transistor cells. Each of the plurality of RF transistor cells includes a control terminal and an output terminal. The RF transistor device further includes an RF input lead, and an input matching network coupled between the RF input lead and the RF transistor die. The input matching network includes a plurality of capacitors having respective input terminals. The input terminals of the capacitors are coupled to the control terminals of respective ones of the RF transistor cells. The input matching network further includes a plurality of resistors coupled respectively between adjacent input terminals of the capacitors.

Abstract: An IC which includes a first circuit and a plurality of first paired terminals each including a first power supply terminal and a first GND terminal which are connected to the first circuit, and a second circuit and a plurality of second paired terminals each including a second power supply terminal and a second GND terminal which are connected to the second circuit. The first and second paired terminals are isolated inside. A printed board with the IC mounted has an inductor which is provided in a route that guides a wiring line from the first GND terminal to the second GND terminal and the GND of the printed board. The printed board has a portion where each of the first GND terminals is arranged inside the terminal array of the IC. The inductor suppresses a high-frequency potential variation generated by the operation of the first circuit.

Abstract: An array of functional cells includes a subset of cells powered by at least one supply rail. That supply rail is formed of first segments located on a first metallization level and second segments located on a second metallization level with at least one conductor element extending between the first and second segments to electrically connect successive segments of the supply rail.

Abstract: There is provided a clock distribution network for synchronizing global clock signals within a 3D chip stack having two or more strata. The clock distribution network includes a plurality of clock distribution circuits, each being arranged on a respective one of the two or more strata for providing the global clock signals to various chip locations. Each of the plurality of clock distribution circuits includes a resonant circuit for providing stratum-to-stratum coupling for the clock distribution network. The resonant circuit includes at least one capacitor and at least one inductor.

Abstract: A semiconductor device or semiconductor package (e.g., a QFP package) including a uniquely configured leadframe sized and configured to maximize the available number of exposed leads in the semiconductor package, and further to provide one or more power bars in the semiconductor package. More particularly, the semiconductor package of the present invention includes a generally planar die paddle or die pad defining multiple peripheral edge segments. In addition, the semiconductor package includes a plurality of leads. Some of these leads include exposed bottom surface portions which are provided in at least two concentric rows or rings which at least partially circumvent the die pad, with other leads including portions which protrude from respective side surfaces of a package body of the semiconductor package. Connected to the top surface of the die pad is at least one semiconductor die which is electrically connected to at least some of the leads.

Abstract: To improve the performance and reliability of semiconductor devices. For the semiconductor chip CP1, power MOSFETs Q1 and Q2 for the switch, a diode DD1 for detecting the heat generation of the power MOSFET Q1, a diode DD2 for detecting the heat generation of the power MOSFET Q2, and plural pad electrodes PD are formed. The power MOSFET Q1 and the diode DD1 are arranged in a first MOSFET region RG1 on the side of a side SD1, and the power MOSFET Q2 and the diode DD2 are arranged in a second MOSFET region RG2 on the side of a side SD2. The diode DD1 is arranged along the side SD1, the diode DD2 is arranged along the side SD2, and all pad electrodes PD other than the pad electrodes PDS1 and PDS2 for the source are arranged along a side SD3 between the diodes DD1 and DD2.

Abstract: A chip unit includes: a first semiconductor chip and a second semiconductor chip disposed such that their surfaces for forming first bonding pads and second bonding pads face each other; first and second connection members disposed on the surfaces of the first and second semiconductor chips for forming the first and second bonding pads, and having redistribution lines which have one ends connected with the first and second bonding pads and the other ends projecting beyond one edges of the first and second semiconductor chips and films; an adhesive member interposed between the first connection members and the second connection members; and via patterns passing through the adhesive member and connecting projecting portions of the redistribution lines of the first and second connection members with each other.

Abstract: Hardware emulation produces relevant and irrelevant trace data. Verification of a design under test requires knowledge of the relevant trace data. Data lines are provided to capture trace data from the hardware emulator's logic elements during emulation. The data lines connect the outputs of these logic elements to the inputs of a configurable interconnect circuit. The configurable interconnect circuit is capable of being programmed to select from a plurality of these inputs to connect a number of the data lines to a scan chain or trace data storage circuit. The configurable interconnect circuit can then selectively connect those data lines carrying relevant trace data to a trace data processing circuit. The trace data processing circuit may be a scan chain, analysis device or storage device or other suitable trace data processing device.