Abstract: The present disclosure relates to a radio frequency (RF) device that includes a mold device die and a multilayer redistribution structure underneath the mold device die. The mold device die includes a device region with a back-end-of-line (BEOL) portion and a front-end-of-line (FEOL) portion over the BEOL portion, and a first mold compound. The FEOL portion includes an active layer formed from a strained silicon epitaxial layer, in which a lattice constant is greater than 5.461 at a temperature of 300K. The first mold compound resides over the active layer. Herein, silicon crystal does not exist between the first mold compound and the active layer. The multilayer redistribution structure includes a number of bump structures, which are at a bottom of the multilayer redistribution structure and electrically coupled to the FEOL portion of the mold device die.

Abstract: The present disclosure relates to a radio frequency device that includes a mold device die and a multilayer redistribution structure underneath the mold device die. The mold device die includes a device region with a back-end-of-line (BEOL) portion and a front-end-of-line (FEOL) portion over the BEOL portion, a barrier layer, and a first mold compound. The FEOL portion includes isolation sections and an active layer surrounded by the isolation sections. The barrier layer formed of silicon nitride resides over the active layer and top surfaces of the isolation sections. The first mold compound resides over the barrier layer. Herein, silicon crystal does not exist between the first mold compound and the active layer. The multilayer redistribution structure includes a number of bump structures, which are at a bottom of the multilayer redistribution structure and electrically coupled to the FEOL portion of the mold device die.

Abstract: A system and method for providing efficient communication between a processor and a device. An interposer is provided to send signals from the processor to the device. The interposer includes a printed circuit board, a first interconnection port communicating with the processor, and a second interconnection port communicating with the device. A retimer/redriver circuit is coupled to the first interconnection port and the second interconnection port, and the retimer/redriver circuit routes signals from the first interconnection port to the second interconnection port.

Abstract: The present disclosure relates to a radio frequency (RF) device that includes a mold device die and a multilayer redistribution structure underneath the mold device die. The mold device die includes a device region with a back-end-of-line (BEOL) portion and a front-end-of-line (FEOL) portion over the BEOL portion, and a first mold compound. The FEOL portion includes an active layer formed from a strained silicon epitaxial layer, in which a lattice constant is greater than 5.461 at a temperature of 300K. The first mold compound resides over the active layer. Herein, silicon crystal does not exist between the first mold compound and the active layer. The multilayer redistribution structure includes a number of bump structures, which are at a bottom of the multilayer redistribution structure and electrically coupled to the FEOL portion of the mold device die.

Abstract: The present disclosure relates to a radio frequency device that includes a transfer device die and a multilayer redistribution structure underneath the transfer device die. The transfer device die includes a device region with a back-end-of-line (BEOL) portion and a front-end-of-line (FEOL) portion over the BEOL portion and a transfer substrate. The FEOL portion includes isolation sections and an active layer surrounded by the isolation sections. A top surface of the device region is planarized. The transfer substrate resides over the top surface of the device region. Herein, silicon crystal does not exist within the transfer substrate or between the transfer substrate and the active layer. The multilayer redistribution structure includes a number of bump structures, which are at a bottom of the multilayer redistribution structure and electrically coupled to the FEOL portion of the transfer device die.

Abstract: An electronic chip disclosed herein includes a plurality of IP core circuits, with a shared strip that is at least partially conductive and is linked to a node for applying a fixed potential. A plurality of tracks electrically links the plurality of IP core circuits to the shared strip. Each individual track of the plurality of tracks solely links a single one of said IP core circuits to the shared strip.

Abstract: The present disclosure relates to a radio frequency device that includes a mold device die and a multilayer redistribution structure underneath the mold device die. The mold device die includes a device region with a back-end-of-line (BEOL) portion and a front-end-of-line (FEOL) portion over the BEOL portion, a barrier layer, and a first mold compound. The FEOL portion includes isolation sections and an active layer surrounded by the isolation sections. The barrier layer formed of silicon nitride resides over the active layer and top surfaces of the isolation sections. The first mold compound resides over the barrier layer. Herein, silicon crystal does not exist between the first mold compound and the active layer. The multilayer redistribution structure includes a number of bump structures, which are at a bottom of the multilayer redistribution structure and electrically coupled to the FEOL portion of the mold device die.

Abstract: Examples for a two-step insert molding process to encapsulate a pre-molded lead frame (104, 304, 504, 704) are described herein. In some examples, a first circuit component (106, 306, 506) and a first portion of a trace array (110, 310, 510) of the pre-molded lead frame for an integrated circuit (1C) assembly are encapsulated by a first insert molding component (112, 312, 512a, 512b, 712). The trace array connects the first circuit component to a second circuit component (108, 308, 508) of the pre-molded lead frame. A second portion of the trace array is encapsulated by a second insert molding component (114, 314, 514, 714).

Abstract: An electronic module has a sealing part 90; electronic elements 15, 25 provided in the sealing part 90; rear surface-exposed conductors 10, 20, 30 having rear surface-exposed parts whose rear surface are exposed from the sealing part 90, and having one-terminal parts 11, 21, 31, which extend from the rear surface-exposed parts 12, 22, 32 and protrude outwardly from a side of the sealing part 90; and rear surface-unexposed conductors 40, 50 having unexposed parts 42, 52, which are sealed in the sealing part 90, and having other-terminal parts 41, 51, which extend from the unexposed parts 42, 52 and protrude outwardly from a side of the sealing part 90. The electronic elements 15, 25 are placed on the rear surface-exposed parts 12, 22, 32. The other-terminal parts 41, 51 have a width narrower than a width of the one-terminal parts 11, 21, 31.

Abstract: A package with a laminate substrate is disclosed. The laminate substrate includes a first layer with a first terminal and a second terminal. The laminate substrate also includes a second layer with a conductive element. The laminate substrate further includes a first via and a second via that electrically connect the first terminal to the conductive element and the second terminal to the conductive element, respectively. The package can include a die mounted on and electrically connected to the laminate substrate.

Abstract: A semiconductor device includes a first conductive plate, a second conductive plate, first switching elements, second switching elements, a first supply terminal and a second supply terminal. The first and second conductive plates are spaced apart from each other in a first direction. The first switching elements are bonded to the first conductive plate, and are electrically connected to the second conductive plate. The second switching elements are bonded to the second conductive plate. The first supply terminal is bonded to the first conductive plate. The second supply terminal has a region that overlaps with the first supply terminal as viewed in a plan view. The second supply terminal is spaced apart from the first conductive plate and the first supply terminal in a thickness direction perpendicular to the first direction. The second supply terminal is electrically connected to the second switching elements.

Abstract: A device may include a substrate having a first surface and a second surface, a first conductive terminal disposed over the first surface, a second conductive terminal spaced apart from the first conductive terminal in a first direction and disposed over the first surface, a first conductive auxiliary pattern disposed below the first conductive terminal and overlapping with the first conductive terminal, the first conductive auxiliary pattern being coupled to the second conductive terminal, and a second conductive auxiliary pattern disposed below the second conductive terminal and overlapping with the second conducive terminal, the second conductive auxiliary pattern being coupled to the first conductive terminal.

Abstract: An electronic device (e.g., integrated circuit) and method of making the electronic device is provided that reduces a strength of an electric field generated outside a package of the electronic device proximate to the low voltage lead pins. The electronic device includes a low voltage side and a high voltage side. The low voltage side includes a low voltage die attached to a low voltage die attach pad. Similarly, the high voltage side includes a high voltage die attached to a high voltage die attach pad. Lead pins are attached to each of the low and high voltage attach pads and extend out from a package of the electronic device in an inverted direction.

Abstract: An aspect includes one or more board layers. A first chip cavity is formed within the one or more board layers, wherein a first Josephson amplifier or Josephson mixer is disposed within the first chip cavity. The first Josephson amplifier or Josephson mixer comprises at least one port, each port connected to at least one connector disposed on at least one of the one or more board layers, wherein at least one of the one or more board layers comprises a circuit trace formed on the at least one of the one or more board layers.

Abstract: A packaged semiconductor device includes a substrate and a contact pad disposed on the semiconductor substrate. The packaged semiconductor device also includes a dielectric layer disposed over the contact pad, the dielectric layer including a first opening over the contact pad, and an insulator layer disposed over the dielectric layer, the insulator layer including a second opening over the contact pad. The packaged semiconductor device also includes a molding material disposed around the substrate, the dielectric layer, and the insulator layer and a wiring over the insulator layer and extending through the second opening, the wiring being electrically coupled to the contact pad.

Abstract: Power semiconductor module, including a base plate with at least one substrate located on the base plate, wherein an electronic circuit is provided on the at least one substrate, wherein located on the at least one substrate are electrical connectors comprising a DC+ power terminal, a DC? power terminal and an AC power terminal and further a control connector, wherein the power semiconductor module is designed as a half-bridge module including a first amount of switching power semiconductor devices and a second amount of switching power semiconductor devices, wherein the base plate includes a contact area, a first device area and a second device area, wherein the contact area is positioned in a center of the base plate such, that the first device area is positioned at a first side of the contact area and that the second device area is positioned at a second side of the contact area, the second side being arranged opposite to the first side, wherein the DC+ power terminal, the DC? power terminal, the AC power

Abstract: Certain aspects of the present disclosure generally relate to a chip package having through-package partial vias. An example chip package generally includes a first substrate, a second substrate, an integrated circuit die, and one or more conductive vias. The integrated circuit die is disposed between the first substrate and the second substrate. The one or more conductive vias are disposed on at least one edge of at least one of the first substrate or the second substrate and electrically coupled to at least one of the first substrate or the second substrate.

Abstract: To improve yield and reliability at the time when a plurality of semiconductor elements used for a semiconductor device is arranged in parallel.

Abstract: A multi-die integrated circuit device and a method of fabricating the multi-die integrated circuit device involve a substrate. Two or more dice include components that implement functionality of the multi-die integrated circuit. The components include logic gates. The multi-die integrated circuit device also includes a spacer disposed between the substrate and each of the two or more dice. Each of the two or more dice makes direct electrical contact with the substrate without making direct electrical contact with the spacer through holes in the spacer.

Abstract: A semiconductor package includes an upper electrically conductive element having a lower carrier substrate having an upper electrically conductive layer, a lower electrically conductive layer having an outwardly exposed surface, and an electrical insulation layer arranged between the electrically conductive layers, a first electrically conductive spacer arranged between the upper electrically conductive element and the upper electrically conductive layer, a power semiconductor chip arranged between the upper electrically conductive element and the upper electrically conductive layer, and a second electrically conductive spacer arranged between the upper electrically conductive element and the chip. A first carrier region of the upper electrically conductive layer is configured to apply a positive supply voltage. A second carrier region alongside the first carrier region is configured as a phase.

Abstract: An aspect includes one or more board layers. A first chip cavity is formed within the one or more board layers, wherein a first Josephson amplifier or Josephson mixer is disposed within the first chip cavity. The first Josephson amplifier or Josephson mixer comprises at least one port, each port connected to at least one connector disposed on at least one of the one or more board layers, wherein at least one of the one or more board layers comprises a circuit trace formed on the at least one of the one or more board layers.

Abstract: The computer-implemented tool generates radial organization charts by ingesting hierarchical structured data, with associated performance attributes, and populating a virtual reporting tree that stores tree structure and radial structure information. The graphing server populates the virtual reporting tree while adding ghost nodes to ensure symmetry. The graphing server calculates and assigns radial and angular positional information to each node and uses that positional information to generate the radial organizer chart, applying coloring information to selected nodes and graphically represented radial relationship lines based on the structure and associated performance attributes from the ingested data.

Abstract: A microwave antenna apparatus comprises a semiconductor element and an antenna element embedded into a mold layer, which is covered by a redistribution layer. The antenna element is preferably configured as SMD component so that it can be handled by a standard pick and place process. The coupling between semiconductor element and antenna element is provided either by a metal layer or aperture coupling within the redistribution layer. The microwave antenna apparatus may be coupled to a PCB arrangement thus forming an embedded wafer-level ball grid array (eWLB) or embedded micro-wafer-level-packaging (emWLP) package.

Abstract: A semiconductor device includes: a seal portion; a first electronic element; a first lead terminal; a second lead terminal having one end that is disposed to be close to the one end of the first lead terminal within the seal portion, and another end that is exposed from another end of the seal portion, the other end of the seal portion being along the longitudinal direction; a first connecting element disposed within the seal portion, and having one end that is electrically connected to the first electrode disposed on the first electronic element, and another end that is electrically connected to the one end of the second lead terminal; and a conductive bonding agent.

Abstract: A semiconductor module is obtained in which breakage of the semiconductor module can be detected in advance while suppressing increase in manufacturing cost. A semiconductor module includes a semiconductor element, a circuit board, a resistor, a first wiring member, and a detector. The circuit board includes a circuit pattern. The resistor is connected to a surface of the circuit pattern. The first wiring member directly connects the resistor to the semiconductor element. In the first wiring member, at least part of current flowing from the semiconductor element to the circuit pattern flows. The detector is configured to detect at least one of a change of a voltage drop value in the resistor and a change of a current value in the resistor.

Abstract: A BGA structure having larger solder balls in high stress regions of the array is disclosed. The larger solder balls have higher solder joint reliability (SJR) and as such may be designated critical to function (CTF), whereby the larger solder balls in high stress regions carry input/output signals between a circuit board and a package mounted thereon. The larger solder balls are accommodated by recessing each ball in the package substrate, the circuit board, or both the package substrate and the circuit board. Additionally, a ball attach method for mounting a plurality of solder balls having different average diameters is disclosed.

Abstract: A cooler (1) has a cooling plate (1a), a cooling fin (1b) provided on a center portion of a lower surface of the cooling plate (1a), and a lower projection (1c) provided on a peripheral portion of the lower surface of the cooling plate (1a). A semiconductor device (3) is provided on an upper surface of the cooling plate (1a). A bus bar (5) is connected to the semiconductor device (3). A cooling mechanism (8) encloses a lower surface and a lateral surface of the cooler (1). An O-ring (9) is provided between a lower surface of the lower projection (1c) and a bottom surface of the cooling mechanism (8). A bolt (10) penetrates a sidewall of the cooling mechanism (8) and screws the cooler (1) to the cooling mechanism (8).

Abstract: The present disclosure provides a wafer-level system-in-package (WLSiP) packaging method and a WLSiP package structure. The WLSiP package structure includes a device substrate including a substrate and a plurality of first chips on the substrate, an encapsulation layer, covering the device substrate, a plurality of second chips embedded in the encapsulation; and an electrical connection structure, electrically connecting at least one of the plurality of second chips with at least one of the plurality of first chips. The plurality of first chips and the plurality of second chips are staggered from each other.

Abstract: An electronic device including: a discrete transistor including a semiconductor chip encapsulated in a package made of an insulating material leaving access to a first pad of connection to a first conduction terminal of the transistor; and a printed circuit board (320) including first (125) and second (129) separate connection pads, wherein the transistor is assembled on the printed circuit board so that the first connection pad (105) of the transistor is in contact with the first (125) and second (129) connection pads of the printed circuit board.

Abstract: A connection system of semiconductor packages includes: a printed circuit board; a first semiconductor package disposed on a first surface of the printed circuit board and connected to the printed circuit board through first electrical connection structures; a second semiconductor package disposed on a second surface of the printed circuit board and connected to the printed circuit board through second electrical connection structures; and a third semiconductor package disposed on the first 10 semiconductor package and connected to the first semiconductor package through third electrical connection structures. The first semiconductor package includes an application processor (AP), the second semiconductor package includes a memory, and the third semiconductor package includes a power management integrated 15 circuit (PMIC).

Abstract: A broadband phased array antenna system is set forth comprising a support member; an antenna array mounted to the support member, the antenna array having a plurality of uniformly excited hybrid radiating elements arranged in a symmetric array on a substrate; a baseband controller mounted to the support member; a radio controller mounted to the support member for modulating and demodulating signals between the baseband controller and antenna array; and a communications interface for removably connecting and disconnecting the antenna system. In one aspect, the antenna array comprises a substrate; a plurality of uniformly excited hybrid radiating elements arranged in a symmetric array on the substrate; a hybrid feeding network for transmitting RF-signals to the hybrid radiating elements; and artificial materials surrounding opposite sides of the symmetric array for suppressing edge scattered fields and increasing gain of the antenna system.

Abstract: Embodiments of the present disclosure are directed towards techniques and configurations for ground via clustering for crosstalk mitigation in integrated circuit (IC) assemblies. In some embodiments, an IC package assembly may include a first package substrate configured to route input/output (I/O) signals and ground between a die and a second package substrate. The first package substrate may include a plurality of contacts disposed on one side of the first package substrate and at least two ground vias of a same layer of vias, and the at least two ground vias may form a cluster of ground vias electrically coupled with an individual contact. Other embodiments may be described and/or claimed.

Abstract: A semiconductor package structure includes: (1) a first substrate; (2) at least one first semiconductor element attached to the first substrate; and (3) a second substrate including a plurality of thermal vias and a plurality of conductive vias, wherein one end of each of the thermal vias directly contacts the first semiconductor element.

Abstract: A mixed pitch method of placing pads in a ball grid array (BGA) package having a. BGA substrate and a plurality of connectors arranged in an array and connected via the pads to the BGA substrate. Selected pairs of the pads are placed on the BGA substrate at a distance defined by a first pitch PT. Ground pads are placed on the BGA substrate at a distance from the selected pairs of pads defined by a second pitch P2, wherein P2=M*P1 and M is greater than one. The selected pairs of the pads on the BGA substrate are also placed at a distance from other selected pairs of the pads defined by the second pitch P2.

Abstract: A unit cell structure is provided. The unit cell structure includes a first section and a second section. The first section defines a first load path and includes a first plurality of first unit cells joined together. The second section defines a second load path separate from the first load path and includes a second plurality of second unit cells joined together, each second unit cell of the second plurality of second unit cells nested within and spaced apart from each first unit cell of the first plurality of first unit cells of the first section.

Abstract: An electronic device module includes a first substrate, at least one electronic device mounted on a lower surface of the first substrate, a second substrate mounted on a lower surface of the first substrate to electrically connect the first substrate to an external source of power, a connecting conductor bonded to a lower surface of the second substrate, and a sealing portion sealing the electronic device, the second substrate, and the connecting conductor, wherein a mounting height of the second substrate is configured to be lower than a mounting height of the electronic device.

Abstract: An aspect includes one or more board layers. A first chip cavity is formed within the one or more board layers, wherein a first Josephson amplifier or Josephson mixer is disposed within the first chip cavity. The first Josephson amplifier or Josephson mixer comprises at least one port, each port connected to at least one connector disposed on at least one of the one or more board layers, wherein at least one of the one or more board layers comprises a circuit trace formed on the at least one of the one or more board layers.

Abstract: A semiconductor device assembly includes a substrate and a die coupled to the substrate. The die includes a first contact pad electrically coupled to a first circuit on the die including at least one active circuit element, a second contact pad electrically coupled to a second circuit on the die including only passive circuit elements, and a plated pad electrically coupling at least a part of the first contact pad to at least a part of the second contact pad. The substrate includes a substrate contact electrically coupled to the plated pad on the die.

Abstract: An electronic device includes a wiring board and a semiconductor device on the wiring board's main surface. The semiconductor device includes a semiconductor chip on a die pad sealed by a sealing body. A back surface of the die pad is directed to a main surface of the sealing body. A back surface of the sealing body faces the main surface of the wiring board. First and second electrodes are formed on the wiring board and in the sealing body, respectively. The second electrode is disposed in the back surface of the sealing body, and is bonded to a metal plate connecting a lead and a pad. A distance between the first and second electrodes is shorter than that between the metal plate and the first electrode. The first and second electrodes overlap each other in a plan view. A capacitor is composed of the first and second electrodes.

Abstract: A communication structure comprises: a central node that is a communication data center of a network-on-chip and used for broadcasting or multicasting communication data to a plurality of leaf nodes; a plurality of leaf nodes that are communication data nodes of the network-on-chip and used for transmitting the communication data to the central node; and forwarder modules for connecting the central node with the plurality of leaf nodes and forwarding the communication data, wherein the plurality of leaf nodes are divided into N groups, each group having the same number of leaf nodes, the central node is individually in communication connection with each group of leaf nodes by means of the forwarder modules, the communication structure is a fractal-tree structure, the communication structure constituted by each group of leaf nodes has self-similarity, and the forwarder modules comprises a central forwarder module, leaf forwarder modules, and intermediate forwarder modules.

Abstract: Apparatuses for supplying power supply voltage in a plurality of dies are described. An example apparatus includes: a circuit board; a regulator on the circuit board that regulates a first voltage; a semiconductor device on the circuit board that receives the first voltage through a power line in the circuit board. The semiconductor device includes: a substrate on the circuit board, stacked via conductive balls, that receives the first voltage from the power line via the conductive balls; a plurality of dies on the semiconductor device, stacked via bumps, each die including, a first conductive via that receives the first voltage via the bumps; a plurality of pillars between adjacent dies and couple the first conductive vias of the adjacent dies; and a sense node switch circuit that selectively couples one first conductive via of one die among the plurality of dies to the regulator.

Abstract: A semiconductor device has a substrate. A conductive via is formed through the substrate. A plurality of first contact pads is formed over a first surface of the substrate. A plurality of second contact pads is formed over a second surface of the substrate. A dummy pattern is formed over the second surface of the substrate. An indentation is formed in a sidewall of the substrate. An opening is formed through the substrate. An encapsulant is deposited in the opening. An insulating layer is formed over second surface of the substrate. A dummy opening is formed in the insulating layer. A semiconductor die is disposed adjacent to the substrate. An encapsulant is deposited over the semiconductor die and substrate. The first surface of the substrate includes a width that is greater than a width of the second surface of the substrate.

Abstract: A method of encapsulating a panel of electronic components such as power converters reduces wasted printed circuit board area. The panel, which may include a plurality of components, may be cut into one or more individual pieces after encapsulation with the mold forming part of the finished product, e.g. providing heat sink fins or a surface mount solderable surface. Interconnection features provided along boundaries of individual circuits are exposed during the singulation process providing electrical connections to the components without wasting valuable PCB surface area. The molds may include various internal features such as registration features accurately locating the circuit board within the mold cavity, interlocking contours for structural integrity of the singulated module, contours to match component shapes and sizes enhancing heat removal from internal components and reducing the required volume of encapsulant, clearance channels providing safety agency spacing and setbacks for the interconnects.

Abstract: A light emitting device includes a board, a light emitting element that is provided on the board, a drive element that is provided on the board and drives the light emitting element, and drive wiring that is provided on the board and connects the light emitting element to the drive element, and a capacitive element that is provided inside the board such that at least a part of the capacitive element overlaps the drive wiring in plan view, and supplies a drive current to the light emitting element via internal wiring which is inside the board and faces the drive wiring.

Abstract: A microwave or radio frequency (RF) device includes stacked printed circuit boards (PCBs) mounted on a flexible PCB having at least one ground plane and a signal terminal. Each of the stacked PCBs includes through-holes the sidewalls of which are coated with a conductive material. Microwave components are mounted on the flexible PCB within the through-holes, such that signal terminals of the components bond to signal terminals of respective through-holes. A conductive cover is mounted on the PCBs such that the cover is in electrical contact with the ground plane of the flexible PCB through the conductive material, forming shielding cavities around the components. The flexible PCB is folded such that the cover of one PCB faces the cover of the second PCB. The flexible PCB includes striplines or microstrips that carry RF or microwave signals to the signal terminals.

Abstract: Provided is a compact power conversion device which is excellent in liquid tightness and has high reliability of a terminal connection portion. A power conversion device according to the present invention includes: a case that houses a power semiconductor; a flow path forming body that forms a flow path with an outer surface of the case; a first fixing material in contact with a refrigerant flowing in the flow path; and a second fixing material that is in contact with the first fixing material and the flow path forming body and covers a direction of displacement of the case of the first fixing material caused by water pressure.

Abstract: An electronic apparatus and a circuit board thereof are provided. The electronic apparatus includes a control device that can operate with the circuit board, and includes a ball pad array. The ball pad array includes a plurality of power ball pads and a plurality of ground ball pads, which are arranged in the same pad arrangement region. At least a portion of the power ball pads and at least a portion of the ground ball pads are arranged in an alternate manner. The circuit board includes a solder pad array corresponding to the ball pad array of the control device so as to be disposed with the control device.

Abstract: In some implementations, a substrate for coupling to an integrated circuit includes multiple layers. Each of the multiple layers has, in a particular region of the substrate, a repeating pattern of regions corresponding to power and ground. The multiple layers include (i) a top layer having, in the particular region, power contacts and ground contacts for coupling to an integrated circuit and (ii) a bottom layer having, in the particular region, power contacts and ground contacts for coupling to another device. At least one layer of the multiple layers has a repeating pattern of signal traces that extend along and are located between the regions corresponding to ground in the at least one layer.

Abstract: The present disclosure describes aspects of power regulation with charge pumps. In some aspects, an integrated circuit (IC) includes multiple processor cores and a power input connected to an internal power rail of the IC. The IC may also comprise embedded charge pumps coupled between the internal power rail of the IC and respective input power rails of the multiple processor cores. Capacitors of the embedded charge pumps may be implemented with on-die capacitors suitable for integration with a die of the circuit to facilitate the embedding of the charge pumps. Alternately or additionally, separate input power rails of the processor cores and the embedded charge pumps may enable more-efficient power regulation or power management on a per-processor core basis, such as when a processor core is throttled or idled to reduce power consumption.

Abstract: A plug-in type power module includes a power unit and a heat-transfer unit vertically disposed on the power unit and extending outwardly away from two sides of the power unit. A first ceramic layer is disposed between the power unit and the heat-transfer unit. Therefore, heat generated by the power unit can be transferred from the first ceramic layer to the heat-transfer unit to increase the speed of heat dissipation. A subsystem having the plug-in type power module is also provided.