Abstract: A linear coefficient of thermal expansion (CTE) mismatch between two materials, such as between a microelectronic die and a mounting substrate, may induce stress at the interface of the materials. The temperature changes present during the process of attaching a die to a mounting substrate can cause cracking and failure in the electrical connections used to connect the die and mounting substrate. A material with a CTE approximately matching the die CTE is introduced in the mounting substrate to reduce the stress and cracking at the electrical connections between the die and mounting substrate. Additionally, this material may comprise thin film capacitors useful for decoupling power supplies.

Abstract: In one embodiment, the present invention includes a semiconductor package with lossy material inserts. The lossy material inserts may reduce electronic noise such as package resonance. Other embodiments are described and claimed.

Abstract: An object is to provide a thin and small semiconductor device that has high reliability and high resistance to external stress and electrostatic discharge. Another object is to manufacture a semiconductor device with high yield while shape defects and defective characteristics which are caused by external stress or electrostatic discharge are prevented in the manufacturing process. A conductive shield covering a semiconductor integrated circuit prevents electrostatic breakdown (malfunction of the circuit or damage to a semiconductor element) of the semiconductor integrated circuit due to electrostatic discharge. By providing an antenna on the external side of the conductive shield, a sufficient communication capability is secured. With the use of a pair of insulators which sandwich the semiconductor integrated circuit, a thin and small semiconductor device that has resistance properties and high reliability can be provided.

Abstract: A semiconductor element and a passive element are embedded in an insulating resin film by thermocompression bonding. After formation of a interconnection, a layered film which contains a film insulating between elements and is provided with a recess or penetrated portion is pressure-bonded followed by formation of a member with a high resistance or a high dielectric constant by embedding a material of a member constituting an element such as a resistor and a capacitor in the recess. Furthermore, after formation of the upper layer insulating resin film, a photoimageable solder resist layer containing the cardo type polymer is formed, and interconnection formation and solder electrode formation are performed.

Abstract: A rectangular display driver integrated circuit device adapted for use with a flat panel display (FPD) device is disclosed and comprises, a plurality of input pads arranged in a central portion of the display driver integrated circuit device, and a plurality of output pads arranged along edges of all four sides of the display driver integrated circuit device. An associated film, film package, and flat panel display (FPD) module adapted to receive the display driver integrated circuit device are also disclosed.

Abstract: A semiconductor device which includes a radiating plate, a wiring patterned layer on the radiating plate via an insulating layer, at least one semiconductor chip mounted on the wiring patterned layer. The semiconductor chip has a surface electrode. The semiconductor device further includes a conductive lead plate electrically connected with the surface electrode of the semiconductor chip, and a resin package of thermoplastic resin having anisotropic linear expansion coefficient varying based upon directions. The resin package covers the wiring patterned layer, the semiconductor chip, the conductive lead plate, and at least a portion of the radiating plate. The conductive lead plate extends in a direction which provides the resin package with the maximum linear expansion coefficient. In the semiconductor device so structured, the warpage of the resin package is reduced both in longitudinal and transverse directions.

Abstract: A plurality of external electrodes 11c, 11m are disposed in parallel along two sides facing each other of a region 300 corresponding to the circuit substrate to be manufactured, and a probing electrode is formed, which is connected to the external electrodes through extending conductors 13a, 13b extending to the outside the region 300 from the external electrodes. At this time, widths of the extending conductors 13a, 13b are set smaller than the widths of the external electrodes 11c, 11m and probing electrodes 12a, 12b. Therefore, a solder storage part is formed in a wide portion in a width changing part between an electrode and a conductor, and a necessary sufficient amount of solder is adhered to the surfaces of the external electrodes 11c, 11m.

Abstract: In an electronic parts packaging structure of the present invention, an electronic parts is mounted or formed on a silicon circuit substrate having a structure in which wiring layers on both sides thereof are connected to each other through a through electrode, and a protruded bonding portion which is ring-shaped and is made of glass, of a seal cap having a structure in which a cavity is constituted by the protruded bonding portion, is anodically bonded to a bonding portion of the silicon circuit substrate, thus, the electronic parts is hermetically sealed in the cavity of the sealing cap.

Abstract: A semiconductor package including a substrate with a semiconductor device mounted on the substrate and a resin member sealing the substrate and semiconductor device. The resin member includes a first surface and a second surface located on the other side of the first surface and a plurality of leads electrically connected with the semiconductor device. The leads project from the resin member and extend to the second surface side; wherein the second surface of the resin member includes a first area having a first concave portion and a second area having a second concave portion which is different from the first area, and the second concave portion is deeper than the first concave portion.

Abstract: A wiring substrate is provided, including an insulating resin layer which is provided on both surfaces of a sheet-like fibrous body and with which the sheet-like fibrous body is impregnated, and a through wiring provided in a region surrounded by the insulating resin layer. The through wiring is formed using a conductive material, the conductive material is exposed on both surfaces of the insulating resin layer, the sheet-like fibrous body is positioned in the conductive material, and the sheet-like fibrous body is impregnated with the conductive material. A manufacturing method of the wiring substrate is also provided.

Abstract: A stacked electronic component comprises a first electronic component adhered on a substrate via a first adhesive layer, and a second electronic component adhered by using a second adhesive layer thereon. The second adhesive layer has a two-layer structure formed by a same material and having different modulus of elasticity. The second adhesive layer of the two-layer structure has a first layer disposed at the first electronic component side and a second layer disposed at the second electronic component side. The first layer softens or melts at an adhesive temperature. The second layer maintains a layered shape at the adhesive temperature. According to the stacked electronic component, occurrences of an insulation failure and a short circuiting are prevented, and in addition, a peeling failure between the electronic components, an increase of a manufacturing cost, and so on, can be suppressed.

Abstract: Electrically and thermally enhanced die-up ball grid array (BGA) packages are described. A BGA package includes a stiffener, substrate, a silicon die, and solder balls. The die is mounted to the top of the stiffener. The stiffener is mounted to the top of the substrate. A plurality of solder balls are attached to the bottom surface of the substrate. A top surface of the stiffener may be patterned. A second stiffener may be attached to the first stiffener. The substrate may include one, two, four, or other number of metal layers. Conductive vias through a dielectric layer of the substrate may couple the stiffener to solder balls. An opening may be formed through the substrate, exposing a portion of the stiffener. The stiffener may have a down-set portion. A heat slug may be attached to the exposed portion of the stiffener. A locking mechanism may be used to enhance attachment of the heat slug to the stiffener. The heat slug may be directly attached to the die through an opening in the stiffener.

Abstract: A method of molding provides two molds (102, 104) formed of semiconductor material. The molds (102, 104) have substantially planar working faces (108, 110) into which recesses (106, 112) are formed. In use the molds (102, 104) are pressed together with the working faces (108, 110) opposed so the recesses (106, 112) form mold cavities. The molds (102, 104) only contact each other in the plane of the working faces (108, 110). A thermoplastic sheet placed between the molds is heated to deform the sheet into the mold cavities.

Abstract: To reduce defects of a semiconductor device, such as defects in shape and characteristic due to external stress and electrostatic discharge. To provide a highly reliable semiconductor device. In addition, to increase manufacturing yield of a semiconductor device by reducing the above defects in the manufacturing process. The semiconductor device includes a semiconductor integrated circuit sandwiched by impact resistance layers against external stress and an impact diffusion layer diffusing the impact and a conductive layer covering the semiconductor integrated circuit. With the use of the conductive layer covering the semiconductor integrated circuit, electrostatic breakdown (malfunctions of the circuit or damages of a semiconductor element) due to electrostatic discharge of the semiconductor integrated circuit can be prevented.

Abstract: A rigid-flex PCB includes at least one rigid PCB (RPCB) and at least one flexible PCB (FPCB). Each RPCB has a connection section; first and second sections separately extended from two lateral edges of the connection section and having at least one FPCB bonding side each; and a weakening structure formed along each joint of the connection section and the first and second sections. Each FPCB has a bending section corresponding to the connection section on the RPCB; first and second sections separately extended from two lateral edges of the bending section and having at least one RPCB bonding side each corresponding to the FPCB bonding sides of the first and second sections of the RPCB. When a proper pressure is applied against the weakening structures, the RPCB may be easily bent broken at the weakening structures to remove the connection section therefrom.

Abstract: Disclosed is a chip-on-film (COF) type semiconductor package and a device using the same. The COF type semiconductor package may include an insulation substrate including a top surface and bottom surface, a semiconductor device on the top surface of the insulation substrate, a heat dissipating component on the bottom surface of the insulation substrate, and at least one space between the bottom surface of the insulation substrate and a top surface of the heat dissipating component.

Abstract: A high power, wide-bandgap device is disclosed that exhibits reduced junction temperature and higher power density during operation and improved reliability at a rated power density. The device includes a diamond substrate for providing a heat sink with a thermal conductivity greater than silicon carbide, a single crystal silicon carbide layer on the diamond substrate for providing a supporting crystal lattice match for wide-bandgap material structures that is better than the crystal lattice match of diamond, and a Group III nitride heterostructure on the single crystal silicon carbide layer for providing device characteristics.

Abstract: An interconnection system is provided for a solid-state device. The solid-state that includes, a first layer, multiple devices and a first face. A second layer is bonded to the first face at a bonded face of the second layer that faces the first face. Electrically conductive bonds are between the first and second faces. Conductive paths are on the bonded face of the second layer and connect two or more of the conductive bonds.

Abstract: The present invention provides a semiconductor device tape carrier formed of an insulative tape 1 of a thin film, which becomes a semiconductor device by conducting a plurality of wire patterns 11 on its surface to a bump 23 of a semiconductor element 21 and being sealed by an insulative resin 22, wherein: an outer dimension of the semiconductor device in a carriage direction of the insulative tape 1 is greater than an integral multiple X (X=1, 2, 3, 4, 5, . . . ) of a pitch interval of sprocket holes 2, which are openings formed to carry the insulative tape 1, and not more than: the integral multiple X+a decimal Y (0<Y<1), and the tape pitch for a single semiconductor device is set to the integral multiple X+a decimal Y (0<Y<1).

Abstract: A semiconductor laser diode device comprises a semiconductor laser diode, a primary lead having a sub-mount for mounting the semiconductor laser diode, at least one secondary lead electrically insulated from the primary lead, a first resin member for integrally fixing the primary lead and the secondary lead while insulating the primary lead from the secondary lead, and a second resin member having an emitting opening through which laser beams generated by the semiconductor laser diode are emitted to the outside, and surrounding the primary lead and the first resin member so as to dissipate heat transferred to the primary lead and the first resin member to the outside.

Abstract: In a ball grid array (BGA) package, a first stiffener is attached to a surface of a substrate. A second stiffener is attached to the surface of the substrate to be co-planar with the first stiffener. The second stiffener is separated from the first stiffener by a channel therebetween. An integrated circuit (IC) die is mounted to a surface of the second stiffener.

Abstract: The present invention includes a base, a rectification chip, a conductive element and a coupling collar. The base has an installation pedestal to hold the rectification chip surrounded by an insulation portion. The conductive element has a root portion to connect the rectification chip. The root portion is extended to form a buffer section. The coupling collar is located at one end of the base to hold the package. The installation pedestal and the inner rim of the base are interposed by a gap. At least one hook portion is formed between the installation pedestal and the bottom of the gap. Thus the base does not turn against the package. The coupling collar has two ends formed an area different from any cross section area of the inner wall thereof.

Abstract: A method of making chip assemblies includes providing an in-process assembly including a semiconductor wafer, a wafer compliant structure overlying a front surface of the wafer and cavities, and terminals carried on the compliant structure adjacent the cavities and electrically connected to the wafer, the cavities being substantially sealed. The method includes subdividing the in-process assembly to form individual chip assemblies, each including one or more chip regions of the wafer, a portion of the compliant structure and the terminals carried on the portion, and opening vents communicating with said cavities after said providing step.

Abstract: A semiconductor integrated circuit (IC) chip includes an IC chip body and a nano-structure-surface passivation film. The IC chip body has at least one surface. The nano-structure-surface passivation film is formed on the at least one surface. The nano-structure-surface passivation film including nano-particles and a carrier resin protects the IC chip body from encountering any external interference. The IC chip body further has a plurality of fingerprint sensing members for sensing a whole fingerprint or a partial fingerprint.

Abstract: A substrate may receive an integrated circuit and a flex circuit on the same side in the same vertical direction. In addition, in some embodiments, a flex circuit adapter and the integrated circuit may be surface mounted in one operation.

Abstract: A circuit substrate includes a plurality of dielectric members and a plurality of wiring patterns. The plurality of wiring patterns are stacked on one another through the plurality of dielectric members. The plurality of dielectric members includes a mount dielectric member. A first wiring pattern of the plurality of wiring patterns is provided on a side of the mount dielectric member. A second wiring pattern of the plurality of wiring patterns is provided on an opposite side of the mount dielectric member. A first length is a length between a reinforcing medium of the mount dielectric member and the opposite side of the mount dielectric member in a thickness direction. A second length is a length between the reinforcing medium of the mount dielectric member and the side of the mount dielectric member in the thickness direction. The first length is smaller than the second length.

Abstract: A heat-releasing printed circuit board and semiconductor chip package are disclosed. The heat-releasing printed circuit board includes an insulation layer, on a surface of which a circuit pattern is formed, and a solder resist, which is stacked on the insulation layer, where the solder resist contains carbon nanotubes. The heat-releasing printed circuit board allows the heat generated in a semiconductor chip to be dispersed in several directions of the board or package, to improve heat-releasing property.

Abstract: A semiconductor device includes: a substrate; a semiconductor element mounted on the substrate; a sealing structure for sealing the semiconductor element, the sealing structure being mounted on the substrate; and an adhesive for bonding the sealing structure and the substrate, wherein the sealing structure has a groove for storing the adhesive.

Abstract: A highly reliable semiconductor device which is not damaged by local pressing force from the outside and in which unevenness of a portion where an antenna and an element overlap with each other is reduced. The semiconductor device includes a chip and an antenna. The chip includes a semiconductor element layer including a thin film transistor; a conductive resin electrically connected to the semiconductor element layer; and a sealing layer. The sealing layer in which a fiber body is impregnated with an organic resin covers the semiconductor element layer and the conductive resin, and has a thickness of 10 to 100 ?m. The antenna has a depressed portion and is electrically connected to the semiconductor element layer through the conductive resin. The chip is embedded inside the depressed portion. The thickness of the chip is equal to the depth of the depressed portion.

Abstract: A multilayer printed wiring board is equipped with a core board 20, a build-up layer 30 formed on the core board 20 so as to have a conductor pattern 32 on the upper surface thereof, a low-elasticity layer 40 formed on the build-up layer 30, lands 52 that are provided on the upper surface of the low-elasticity layer 40 and connected to an IC chip 70 via solder bumps 66, and conductor posts 50 that penetrate through the low-elasticity layer 40 and electrically connect the lands 52 to the conductor pattern 32. The low-elasticity layer 40 is formed of resin composition containing epoxy resin, phenol resin, cross-linked rubber particles and a hardening catalyst.

Abstract: A tamper-resistant packaging approach protects non-volatile memory. According to an example embodiment of the present invention, an array of magnetic memory elements (130-132) in an integrated circuit (100) are protected from magnetic flux(122) by a package (106) including a magnet (120). Flux from the magnet is directed away from the magnetic memory elements by the package. When tampered with, such as by removal of a portion of the package for accessing the magnetic memory elements, the package allows the flux to reach some or all of the magnetic memory elements, which causes a change in a logic state thereof. With this approach, the magnetic memory elements are protected from tampering.

Abstract: A semiconductor plastic package and a method of fabricating the semiconductor plastic package are disclosed. A method of fabricating a semiconductor plastic package can include: providing a core board, which includes at least one pad, and which has a coefficient of thermal expansion of 9 ppm/° C. or lower; stacking a build-up insulation layer over the core board; forming an opening by removing a portion of the build-up insulation layer such that the pad is exposed to the exterior; and placing a semiconductor chip in the opening and electrically connecting the semiconductor chip with the pad. This method can be utilized to provide higher reliability in the connection between the semiconductor chip and the circuit board.

Abstract: Embodiments of the present invention provide an apparatus, a system, and a method, and include a generally rectilinear body having a first surface and a second surface. The second surface is substantially perpendicular to the first surface. An electrically operative element is disposed on the first surface, and has opposite ends. Spaced apart terminations are disposed on the second surface, and are electrically coupled with the opposite ends of the electrically operative element. The terminations are designed to be coupled with a substrate.

Abstract: One embodiment disclosed relates to a method for sealing an active area of a non-silicon-based device on a wafer. The method includes providing a sacrificial material over at least the active area of the non-silicon-based device, depositing a seal coating over the wafer so that the seal coating covers the sacrificial material, and replacing the sacrificial material with a target atmosphere. Another embodiment disclosed relates to a non-silicon-based device sealed at the wafer level (i.e. prior to separation of the die from the wafer). The device includes an active area to be protected, a contact area, and a lithographically-formed structure sealing at least the active area and leaving at least a portion of the contact area exposed.

Abstract: A transparent board is positioned on a support board provided with a positioning mark, and a release material is provided. A semiconductor element is then positioned so that the electrode element faces upward, and the support board is then removed. An insulating resin is then formed on the release material so as to cover the semiconductor element; and a via, a wiring layer, an insulation layer, an external terminal, and a solder resist are then formed. The transparent board is then peeled from the semiconductor device through the use of the release material. A chip can thereby be mounted with high precision, there is no need to provide a positioning mark during mounting of the chip on the substrate in the manufacturing process, and the substrate can easily be removed. As a result, a semiconductor device having high density and a thin profile can be manufactured at low cost.

Abstract: Provided are semiconductor die flip chip packages with warpage control and fabrication methods for such packages. A package includes a heat spreader that is attached to a die and a stiffener, which are in turn attached to a package substrate. In general, the stiffener is made of a material that has a relatively low CTE value. For example, the stiffener material may have a CTE value less than 12 ppm/° C. The material may also have a relatively low mass density value of less than 8.9 g/cm3. Such a material may include natural graphite or some composite form of it. The result is a package with less bowing and so improved co-planarity (e.g., in compliance with industry specifications) with the surface to which it is ultimately bound; thereby, improving the reliability of the package. Moreover, a package that is relatively lighter and more robust than conventional semiconductor die flip chip packages can be realized.

Abstract: A method for producing a flexible electronic device is provided. The method comprises steps of providing a flexible substrate, forming an inorganic film on the flexible substrate and etching the inorganic film to obtain an electronic element of the electronic device. In another aspect, a flexible electronic device is provided. The flexible electronic device comprises a flexible substrate and an inorganic film disposed on the flexible substrate and having an electronic element, wherein the electronic element is formed by etching the inorganic film.

Abstract: Some embodiments include methods of assembling integrated circuit packages in which at least two different conductive layers are formed over a bond pad region of a semiconductor die, and in which a conductive projection associated with an interposer is bonded through a gold ball to an outermost of the at least two conductive layers. The conductive layers may comprise one or more of silver, gold, copper, chromium, nickel, palladium, platinum, tantalum, titanium, vanadium and tungsten. In some embodiments, the bond pad region may comprise aluminum, an inner of the conductive layers may comprise nickel, an outer of the conductive layers may comprise gold, the conductive projection associated with the interposer may comprise gold; and the thermosonic bonding may comprise gold-to-gold bonding of the interposer projection to a gold ball, and gold-to-gold bonding of the outer conductive layer to the gold ball. Some embodiments include integrated circuit packages.

Abstract: A system and method for utilizing lead-free multi-core modules with organic substrates,including a base portion configured to attach a semiconductor chip;and a cap portion further comprising: a bottom portion configured to be sealed to the base portion;and a vacuum port;wherein when a vacuum is drawn at the vacuum port,a re-workable seal between the base portion and the cap portion is provided to enable rework.

Abstract: The semiconductor device includes a plurality of semiconductor chips, and a circuit substrate having a substantially rectangular outer shape. The semiconductor device is an MCM having an MCM packaging structure in which the plurality of semiconductor chips are juxtaposed on the semiconductor chip mounting surface of the circuit substrate, and the semiconductor chip mounting surface is covered by a sealing resin along an outer edge of the circuit substrate so that the plurality of semiconductor chips are sealed.

Abstract: A dielectric composition for forming a dielectric layer usable in circuitized substrates such as PCBs, chip carriers and the like, the composition including at least two fluoropolymers and two inorganic fillers. A circuitized substrate including at least one such dielectric layer and at least one conductive layer thereon is also provided.

Abstract: A package structure with chip embedded therein is disclosed, which comprises a circuit board having a first surface, an opposite second surface and a through cavity penetrating the circuit board, wherein the first surface of the circuit board has a plurality of first conductive pads and a plurality of wire bonding pads disposed thereon, and the second surface of the circuit board has a plurality of second conductive pads disposed thereon; and a chip embedded in the through cavity of the circuit board, wherein the gap between the through cavity and the chip is filled with a filling material, the chip has an active surface with a plurality of electrode pads and an inactive surface, and the electrode pads electrically connect to the wire bonding pads of the circuit board by a plurality of metal lines. The present invention further provides a package module using the aforementioned package structure.

Abstract: A semiconductor device includes: a semiconductor chip; a package for accommodating the chip, wherein the package has a box shape with an opening and a bottom; and a cover for sealing the opening of the package. The semiconductor chip is disposed on the bottom of the package. The cover has a plate shape. The cover includes a protrusion, which is disposed at a center of the plate shape. The protrusion protrudes toward an outside of the package.

Abstract: There is disclosed a fixing method of an electronic component or the like in which when the electronic component and a resin layer are fixed, warp and bend of the electronic component can be inhibited. During manufacturing of a semiconductor-embedded substrate 200 in which a semiconductor device 220 is embedded, after the semiconductor device 220 is disposed on an unhardened resin layer 212, this device is stored in a container 31 of a pressurizing and heating unit 3, and the semiconductor device 220 is isotropically pressurized using an internal gas in the container 31 as a pressure medium, whereby the semiconductor device 220 is pressed to the unhardened resin layer 212, and the resin layer 212 is heated to harden. In consequence, the semiconductor device 220 is fixed and mounted on the resin layer 212 without being warped or bent.

Abstract: The invention concerns a module comprising a carrier element, a semiconductor device mounted on said carrier element and a silicon-based insulating layer. The silicon-based insulating layer is arranged on the side of the carrier element opposite to the semiconductor device. The invention further concerns a module comprising a semiconductor device, a mold compound at least partly covering the semiconductor device and a silicon-based passivation layer. The silicon-based passivation layer covers at least partly the periphery of the mold compound.

Abstract: A semiconductor package includes a semiconductor chip electrically connected to a plurality of leads arranged at the periphery of the semiconductor chip wherein each of the leads is bent to have a first portion exposed from the upper surface of the semiconductor package and a second portion exposed from the lower surface of the semiconductor package. Both of the first portion and the second portion of each lead can be utilized for making external electrical connection.

Abstract: In one embodiment, a device is packaged using a low-cost thermally enhanced ball grid array (LCTE-BGA) package. The device may include a die with its backside mounted to the bottom side of a multi-layer packaging substrate. Thermal vias may be formed through the substrate to allow heat to be conducted away from the backside of the die to a top most metal layer of the substrate. Thermal balls may be attached to the bottom side of the substrate on the same plane as the die.

Abstract: A tape automated bonding (TAB) structure which includes a flex tape having a conductive lead pattern formed thereon. The conductive lead pattern includes a plurality of leads configured to form an inner lead bond (ILB) portion of the TAB structure. At least one of the plurality of leads is internally routed and has a contact exposed interior to the ILB portion of the TAB structure.

Abstract: A semiconductor device includes a carrier, a semiconductor chip including an active area on a first face and a separate isolation layer applied to a second face, and an adhesion material coupling the isolation layer to the carrier with the second face facing the carrier.

Abstract: A film, based on polyimide or epoxy, is laminated onto a surface of a substrate under a vacuum, so that the film closely covers the surface and adheres thereto. Contact surfaces to be formed on the surface are uncovered by opening windows in the film. A contact is established in a plane manner between each uncovered contact surface and a layer of metal. This establishes a large-surface contact providing high current density for power semiconductor chips.