Abstract: An hermetic, gas filled or vacuum package device and method of making a vacuum package device. The device includes a device layer having one or more Micro Electro-Mechanical Systems (MEMS) devices. The device layer includes one or more electrical leads coupled to the one or more MEMS devices. The device also includes a first wafer having one or more silicon pins, wherein a first surface of the first wafer is bonded to a first surface of the device layer in such a manner that the one or more silicon pins are in electrical communication with the electrical leads. A second wafer, which may also have one or more silicon pins, is bonded to a second surface of the device layer. The first and second wafers are formed of borosilicate glass and the device layer is formed of silicon.

Abstract: A semiconductor device includes a plastic housing and a semiconductor chip, wherein the semiconductor chip includes an active top side and a rear side. An interposer is arranged on the active top side of the semiconductor chip. At least a portion of the interposer is embedded into the plastic housing, while the top side of the interposer forms the top side of the semiconductor device. A top side fitting shape is arranged on the top side of the interposer, where the top side fitting shape has a predetermined radius of curvature that is free of plastic housing composition, and the top side fitting shape has a convex or concave lens-shaped sphere segment shape.

Abstract: There is provided a semiconductor package including: a substrate having a plurality of electrode pads on a surface thereof; a semiconductor chip mounted on the substrate, the semiconductor chip electrically connecting with the plurality of electrode pads; and a stiffener arranged on the substrate so as to surround the semiconductor chip. The stiffener includes: an insulating material layer; and a rigid plate mounted substantially parallel to a surface of the substrate in the insulating material layer, the rigid plate having formed therein a plurality of through holes, at least a part of the through holes being filled with the insulating material.

Abstract: A semiconductor chip is provided that is highly packageable and particularly well suited for mounting on a circuit board having a curved surface. The semiconductor chip comprises a warpage control film that controls the warpage of a substrate.

Abstract: An interposer to be interposed between a semiconductor chip to be mounted thereon and a packaging board has an interposer portion made of a semiconductor material and an interposer portion provided around the foregoing interposer portion integrally therewith. On both surfaces of the interposer portions, wiring patterns are formed via insulating layers. The wiring patterns are electrically connected via through holes formed at required positions in the interposer portions. The outer interposer portion is made of an insulator or a metal body. Further, external connection terminals are bonded to one surface of the interposer.

Abstract: Formation of a plurality of conductive connectors of an integrated circuit package is described. The conductive connectors made with a conductive elastomer material and formed using an interposer that includes a plurality of the conductive connectors linked together.

Abstract: One aspect of the invention relates to a semiconductor device including a housing and a semiconductor chip partly embedded in a plastic housing composition. Another aspect relates to a method for producing the same. The plastic housing composition has at least one host component having a softening temperature and an incorporated component having a phase change temperature. In this case, the softening temperature of the host component is greater than the phase change temperature of the incorporated component.

Abstract: A MEMS module package includes a substrate, a silicon chip attached on the substrate and having an active zone and an inactive zone surrounding around the active zone, a plurality of bonding wires electrically connected the silicon chip and the substrate, and an encapsulant formed between the inactive zone of the silicon chip and the substrate to encapsulate the inactive zone of the silicon, the bonding wires and a part of the substrate in such a manner that the active zone of the silicon chip is exposed outside the encapsulant. The MEMS module package uses a molding technique to substitute for the conventional cap package, thereby simplifying the packaging procedure and saving much the cost of manufacturing.

Abstract: A wiring board comprising: a plate core having a first main surface and a second main surface; conductor layers including a conductor line; dielectric layers laminated alternately with said conductor layers on at least one of said first and second main surfaces; via conductors as defined herein; a signal through-hole as defined herein; a signal through-hole conductor as defined herein; a first path end pad as defined herein; a second path end pad as defined herein; a shield through-hole as defined herein; and a shield through-hole conductor as defined herein; wherein: a signal transmission path is formed as defined herein; at least one of said conductor layers is disposed on each of said first and second main surface sides; said surface conductor on said first main surface side and said conductor line form a strip line, a microstrip line, or a coplanar waveguide with constant characteristic impedance Z0; an inner surface of said shield through-hole is covered with said shield through-hole conductor; and an in

Abstract: A packaged chip is provided which includes a package element on which a signal-bearing conductive trace has an edge laterally adjacent to an edge of a reference conductive trace (e.g., ground trace) on the same face of a dielectric element, the two traces together functioning as a capacitor. In a particular embodiment, the laterally adjacent traces provide shunt capacitance to compensate for an inductance in a signal path to the chip which includes the signal-bearing conductive trace. In a variation thereof, a transmission line or waveguide is provided which includes the signal-bearing conductive trace and reference trace. In further variations, transmission lines are provided which include one or more metal layers of a package element, separated from each other by a thickness of a dielectric element included in the package element or the air gap between the package and a circuit panel.

Abstract: When a two-division structure heat treatment jig for semiconductor substrate that includes a silicon first jig that comes into direct contact with a semiconductor substrate that is heat treated and supports the semiconductor substrate, and a second jig (holder) that holds the first jig and is mounted on a heat treatment boat is adopted as a heat treatment boat of a vertical heat treatment furnace, the stress concentrated during the heat treatment on a particular portion of the semiconductor substrate can be reduced; in the case of a semiconductor substrate large in the tare stress and having an outer shape of 300 mm being heat treated, or even in the case of the heat treatment being carried out under very high temperature conditions, the slips can be suppressed from occurring. The present invention can be widely applied as a stable heat treatment method of semiconductor substrates.

Abstract: According to the present invention, a gettering layer is deposited both on the side surfaces and the bottom surface of a semiconductor chip. The semiconductor chip is then mounted on the board of a package so that a Schottky barrier is formed on the bottom surface. With this structure, metal ions that pass through the board of the package can be captured by the defect layer deposited on the side surfaces and/or the bottom surface of the semiconductor chip, and by the Schottky barrier.

Abstract: A package substrate for carrying a chip with a plurality of bumps thereon is provided. The package substrate includes a first substrate, and an interposer. The first substrate has a first circuit layer disposed on a surface thereof. The interposer includes a second substrate and a second circuit layer formed thereon. The second circuit layer comprises a plurality of bonding pads and traces. The traces are electrically connected to the corresponding bonding pads. Furthermore, the bonding pads are used for being connected to the bumps. The second circuit layer of the interposer is physically and electrically connected to the first circuit layer of the first substrate, and the second substrate and the first substrate are made of different materials.

Abstract: An exemplary assembly comprises a printed wiring board having a first surface, and a package including a plurality of solder joints, such as solder balls, on one surface of the package. An anchor via is defined through the first surface of the printed wiring board, and conductive material situated in the anchor via is connected to or integral with a respective solder joint of the package.

Abstract: A chip-on-board (COB) package has a flip chip assembly structure and is used for an integrated circuit (IC) card. The COB package has conductive patterns as contact terminals on an outer surface of a non-conductive film, and an IC chip on an inner surface of the film. The film has a number of holes through which the conductive patterns are partly exposed. A number of conductive bumps on an active surface of the IC chip face the inner surface of the film and enter corresponding holes in the non-conductive film to mechanically join and electrically couple to the conductive patterns. The disclosed COB package and a related manufacturing method allow a reduction in production cost, simplified process, better electrical connections, and improved reliability.

Abstract: An interface module for connecting LSI packages includes a connecting member which is to be mounted on an LSI package including an LSI chip and which includes lines to be electrically connected to the LSI package, an optoelectronic transducer which is mounted on the connecting member, which is connected to the lines of the connecting member, and which converts optical signal to electric signal or converts electric signal to optical signal, an optical waveguide which includes an optical input end and an optical output end, one of which is optically connected to the optoelectronic transducer, and a reinforcing film which is adhered to the optical waveguide, covering at least one side of the optical waveguide, and which is secured at one end to the connecting member.

Abstract: Two or more integrated circuits are stacked into a high density circuit module. The lower IC is inverted. Electrical connection to the integrated circuits is made by module contacts on a flexible circuit extending along the lower portion of the module. In one embodiment, the flexible circuit provides a balanced electrical connection to two CSP integrated circuits. In another embodiment, the flexible circuit provides a balanced electrical connection to inter-flex contacts of additional flexible circuits on two submodules. The additional flexible circuits provide further balanced connections to CSP integrated circuits in each submodule.

Abstract: A capacitive structure and technique for allowing near-instantaneous charge transport and reliable, wide-band RF ground paths in integrated circuit devices such as integrated circuit dies, integrated circuit packages, printed circuit boards, and electronic circuit substrates is presented. Methods for introducing resistive loss, dielectric loss, magnetic loss, and/or radiation loss in a signal absorption ring implemented around a non-absorptive area of one or more conductive layers of an integrated circuit structure to dampen laterally flowing Electro-Magnetic (EM) waves between electrically adjacent conductive layers of the device are also presented.

Abstract: An interconnect structure of a semiconductor device designed for reduced intralevel and interlevel capacitance, and includes a lower metal layer and an upper metal layer and an insulating layer interposed between metal layers. Each of the lower metal layer and upper metal layer include a plurality of conductive lines spaced apart and extending within a low-k dielectric material. A plurality of metal-filled vias interconnects the conductive lines of the lower metal layer to the conductive lines of the upper metal layer. The insulating layer comprises also comprises a low-k dielectric material disposed between the adjacent metal-filled vias. Openings, having been etched in the low-k dielectric material between the conductive lines of the upper and lower metal layers, and the metal-filled vias, an ultra-low k material is deposited within the openings. The integration of the ultra-low k and low-d dielectric materials reduces the overall capacitance of the structure to enhance performance.

Abstract: The present invention provides a low-profile and light-weight semiconductor device having improved product reliability and higher frequency performance. A multi-layer interconnect line structure is disposed just under circuit devices 410a and 410b. An Interlayer insulating film 405 that composes a part of the multi-layer interconnect line structure is formed of a material having a relative dielectric constant within a range from 1.0 to 3.7, and a dielectric loss tangent within a range from 0.0001 to 0.02.

Abstract: Disclosed are a stack package and a fabricating method thereof using a ball grid array semiconductor package (hereinafter, referred to as “BGA PKG”). The stack package can easily electrically connect the stacked BGA PKGs with each other by simplifying a stack structure between the BGA PKGs, and increase bonding reliability by improving bonding force bonded portions of solder balls of substrates.

Abstract: The present invention provides a circuit board which prevents an adverse effect to be caused on electronic components by flux or the like that is produced at the time of soldering. According to this invention, land patterns 6 and 7 for connecting a flat cable 5 and a slide switch 4 are formed apart from each other on a circuit board and a slit 10 is formed between the land patterns 6 and 7. Consequently, although flux is produced when terminals 5a to 5f of the flat cable 5 are soldered to the land pattern 7, the flux can escape from the slit 10 and does not intrude into the slide switch 4 easily.

Abstract: A substrate having many via contact means disposed therein. Each of the via contact means is composed of a via hole, as a through-hole, formed in the substrate, a metal film disposed on the inner peripheral surface of the via hole, and a solder filled into the cavity defined by the metal film.

Abstract: A method for programming a routing layout design through one via layer includes forming a plurality of metal traces on a first routing layer and a second routing layer, and positioning a plurality of vias within a via layer disposed between the first and second routing layers for connecting the metal traces on the first and second routing layers according to a first current route defined by a predetermined circuit layout design to connect a first node and a second node so as to establish a second current route equivalent to the first current route.

Abstract: A device (10) is provided for matching the CTE between substrates (12, 14), e.g., a semiconductor substrate and packaging material. The first substrate (12) has a first coefficient of thermal expansion and the second substrate (14) has a second coefficient of thermal expansion. At least two layers (16) of liquid crystal polymer are formed between the first substrate (12) and the second substrate (14), each layer having a unique coefficient of thermal expansion progressively higher in magnitude from the first substrate (12) to the second substrate (14).

Abstract: Devices include at least one semiconductor die including at least one surface that is at least partially covered by a photopolymer material. The photopolymer material includes a plurality of discrete particles dispersed through a polymerized matrix. In some embodiments, the photopolymer material may cover at least a portion of each of a plurality of semiconductor dice attached to a substrate. Furthermore, the photopolymer material may cover only a portion of each of the plurality of semiconductor dice, and another photopolymer material may cover another portion of each of the plurality of semiconductor dice.

Abstract: An optical semiconductor device has an optical semiconductor element; and a mounting substrate unit on which the optical semiconductor element is mounted, wherein the optical semiconductor element has an element substrate 14 and an active layer 17 formed on a lower side surface of the element substrate, the mounting substrate unit has a mounting substrate 23 and a heater electrode 8 arranged on an upper side surface of the mounting substrate. The optical semiconductor element is arranged such that the lower side surface of the element substrate 14 on which the active layer 17 is formed faces the upper side surface of the mounting substrate 23 on which the heater electrode 8 is arranged, and the active layer 17 is to be heated due to the heat-generation by the heater electrode 8. A p-electrode 10 of the mounting substrate unit and a p-electrode 19 of the optical semiconductor element are bonded to each other using a conductive fusion bonding member 20.

Abstract: An optical semiconductor device includes an optical semiconductor element, a metal pattern and at least one thermal conductive material. The optical semiconductor element has a first optical waveguide region and a second optical waveguide region. The second optical waveguide region is optically coupled to the first optical waveguide region and has a heater for changing a refractive index of the second optical waveguide region. The metal pattern is provided on an area to be thermally coupled to a temperature control device. The thermal conductive material couples the metal pattern with an upper face of the first optical waveguide region of the optical semiconductor element. The thermal conductive material is electrically separated from the first optical waveguide region.

Abstract: An optical semiconductor device has a semiconductor substrate, a semiconductor region and heater. The semiconductor region has a stripe shape demarcated with a top face and a side face thereof. The stripe shape has a width smaller than a width of the semiconductor substrate. An optical waveguide layer is located in the semiconductor region. A distance from a lower end of the side face of the semiconductor region to the optical waveguide layer is more than half of the width of the semiconductor region. The heater is provided above the optical waveguide layer.

Abstract: A carrier structure and method for fabricating a carrier structure with through-vias each having a conductive structure with an effective coefficient of thermal expansion which is less than or closely matched to that of the substrate, and having an effective elastic modulus value which is less than or closely matches that of the substrate. The conductive structure may include concentric via fill areas having differing materials disposed concentrically therein, a core of the substrate material surrounded by an annular ring of conductive material, a core of CTE-matched non-conductive material surrounded by an annular ring of conductive material, a conductive via having an inner void with low CTE, or a full fill of a conductive composite material such as a metal-ceramic paste which has been sintered or fused.

Abstract: A liquid crystal display device includes a liquid crystal panel including a pad electrode, a tape circuit substrate and an anisotropic conductive film. The pad electrode receives one of a driving signal and a power supply voltage signal. The tape circuit substrate includes a base film made of an insulating material, and a signal line formed on the base film and having a slit at a portion of the signal line which overlaps the pad electrode of the liquid crystal panel. The anisotropic conductive film connects the outer lead with the pad electrode.

Abstract: An integrated circuit package includes a substrate having a central axis dividing the substrate into an upper half and a lower half and an integrated circuit coupled to the substrate. A layer is provided within the substrate in the lower half thereof that is configured to resist warpage of the integrated circuit package, the layer provided a distance from the central axis.

Abstract: Signal traces are patterned on a top surface of a substrate. A ground trace is patterned on the top surface of the substrate for at least one pair of the signal traces. A die paddle is patterned on the top surface of the substrate, and the die paddle is connected directly with the ground trace.

Abstract: A semiconductor device has a semiconductor substrate, at least a first and second rewiring device on a first surface of the semiconductor substrate for the provision of an electrical contact-connection of the semiconductor substrate, and a tapering, continuous opening from a first surface to a second, opposite surface of the semiconductor substrate. At least a third and fourth rewiring device is disposed on the second surface of the semiconductor substrate and a patterned metallization on the side areas of the opening for the separate contact-connection of the first and at least the second rewiring device.

Abstract: In an electronic circuit device including a substrate including a front surface on which an electronic circuit element is mounted and a reverse surface opposite to the front surface in a thickness direction of the substrate, an electrically conductive terminal member electrically connected to the electronic circuit element, a lead frame extending perpendicular to the thickness direction to face the reverse surface in the thickness direction, and a sealing resin covering at least partially the electronic circuit element, substrate and lead frame while at least a part of the electrically conductive terminal member is prevented from being covered by the sealing resin, the substrate extends to project outward from an end of the lead frame in a transverse direction perpendicular to the thickness direction while the end of the lead frame is covered by the sealing resin.

Abstract: A printed circuit board for an electronic circuit, especially for the ultra-high frequencies located in the GHz range that comprises at least one conductor layer, which is arranged on top of an insulating layer and which is flatly joined to said insulating layer. Improved mechanical, thermal and electrical properties are attained by virtue of the fact that the insulating layer is a thin glass layer.

Abstract: Crosslinkable liquid crystalline polymer compositions for use as dielectric materials in circuit materials, circuits, and multi-layer circuits are disclosed. The crosslinkable liquid crystalline polymer compositions comprise crosslinkable liquid crystalline polymers that preferably comprise end groups selected from the group consisting of phenyl maleimide, nadimide, phenyl acetylene, or combinations of the foregoing. Additionally, the crosslinkable liquid crystalline polymer compositions may further comprise particulate fillers and/or fibrous webs. The crosslinkable liquid crystalline polymer compositions provided improved electrical and mechanical properties.

Abstract: A semiconductor chip mounting substrate having a semiconductor bare chip and a substrate electrically connected to the semiconductor bare chip by wire bonding is provided. Here, a protective film is provided on the surface of the semiconductor bare chip and is disposed so as to expose all or a part of a bonding wire.

Abstract: A multilayer wiring board (X1) comprises a core portion (100) and out-core wiring portion (30). The core portion (100) comprises a carbon fiber reinforced portion (10) composed of a carbon fiber material (11) and resin composition (12), and an in-core wiring portion (20) which has a laminated structure of at least one insulating layer (21) containing a glass fiber material (21a) and a wiring pattern (22) composed of a conductor having an elastic modulus of 10 to 40 GPa and which is bonded to the carbon fiber reinforced portion (10). The out-core wiring portion (30) has a laminated structure of at least one insulating layer (31) and a wiring pattern (32) and is bonded to the core portion (100) at the in-core wiring portion (20).

Abstract: A multilayer circuit carrier, electronic devices and panel, and a method for producing a multilayer circuit carrier include at least one semiconductor chip, at least one rewiring layer with a rewiring structure, and at least one insulation layer, which has passage structures.

Abstract: A semiconductor device includes a plurality of insulating layers laminated on a substrate to cover passive elements such as a capacitor, an inductor, and the like, and to fix an IC chip in a face up state in one of the insulating layers. The insulating layers have similar structures in each of which the passive element or the semiconductor chip is disposed in at the bottom, a plug is formed in the insulating layer to pass therethrough in the thickness direction for extending an electrode of one of these elements to the top surface, and a conductive layer is provided as wiring on the top surface of the insulating layer to be connected to the plugs for electrically connecting respective elements or rearranging the electrode position. Also, an insulating layer is provided on the top for protecting the semiconductor device and for providing an external connecting electrode.

Abstract: A package base for a semiconductor element is made of a carbon composite material. The mounting surface of the package base includes a first area on which at least one first element including at least one semiconductor element is to be mounted, and a second area on which at least one second element including at least a terminal for electrode wiring is to be mounted. Preferably, the carbon composite material is a high-density, isotropic carbon-fiber composite material. In addition, the mounting surface may have a step change in surface elevation for alignment of either of the at least one first element and the at least one second element.

Abstract: The invention relates to an injection moulded product comprising an attached body which has been attached by an intermediate layer. The body has been attached to the injection moulded product by an intermediate layer attached to the body prior to the injection moulding. The invention also relates to a method for the manufacture of an injection moulded product comprising a body which has been attached by an intermediate layer.

Abstract: A tape automated bonding (TAB) structure which includes a flex tape having a conductive lead pattern formed thereon. The conductive lead pattern includes a plurality of leads configured to form an inner lead bond (ILB) portion of the TAB structure. At least one of the plurality of leads is internally routed and has a contact exposed interior to the ILB portion of the TAB structure.

Abstract: A dielectric material for use in a circuit material comprises a liquid crystalline polymer and a polyhedral oligomeric silsesquioxane (POSS) filler. Such dielectric materials may provide a variety of advantageous properties, especially in high frequency circuits.

Abstract: A laminated radiation member includes a radiation plate, an insulation substrate bonded to the upper surface of the radiation plate and an electrode provided on the upper surface of the insulation substrate. The laminated radiation member is made by a method including the steps of surface treating a bonding surface of the radiation plate and/or the insulation substrate, interposing ceramic particles surface treated to assure wettability with a hard solder or a metal between the radiation plate and the insulation substrate, disposing a hard solder above and/or below the ceramic particles, heating the hard solder to a temperature higher than the melting point of the solder, penetrating the molten hard solder into spaces between the ceramic particles to react the ceramic particles with the solder to produce a metal base composite material, and bonding the radiation plate and the insulation substrate with the metal base composite material.

Abstract: A dielectric composite material containing a toughened benzocyclobutene resin and at least about 50% by weight of an inorganic filler. Also electronic packages having at least one conductive layer and at least one layer of the dielectric composite material. The dielectric composite material can have a dielectric constant less than about 3.5, and a dielectric loss of less than about 0.004.

Abstract: A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

Abstract: In the high-frequency module of the present invention, an insulating resin is formed so as to seal a high-frequency semiconductor element mounted on a surface of a substrate and further to seal electronic components. Furthermore, a metal thin film is formed on the surface of the insulating resin. This metal thin film provides an electromagnetic wave shielding effect.

Abstract: This application discloses an apparatus comprising a substrate including a plurality of conducting layers and a nanocomposite inter-layer dielectric (ILD) sandwiched between the conducting layers, wherein the nanocomposite ILD layer comprises a nanocomposite including a polymer having a plurality of nanoclay particles dispersed therein, the nanoclay particles having a high aspect ratio. Also disclosed is an apparatus comprising a substrate having a contact surface and a nanocomposite solder resist layer placed on the contact surface, wherein the solder resist comprises a nanocomposite including a polymer binder having a plurality of nanoclay particles dispersed therein, the nanoclay particles having a high aspect ratio.