Abstract: A double-face-cooled semiconductor module with an upper arm and a lower arm of an inverter circuit includes first and second heat dissipation members, each having a heat dissipation surface on one side and a conducting member formed on another side through an insulation member. On the conducting member on the first dissipation plate is provided with a fixing portion that fixes a collector surface of the semiconductor chip and a gate conductor connected to a gate terminal of the semiconductor module. The gate electrode terminal and the gate conductor are wire bonded. The conducting member on the second heat dissipation member is connected to an emitter surface of the semiconductor chip connected to the first heat dissipation member. The productivity and reliability are improved by most of formation operations for the upper and lower arms series circuit on one of the heat dissipation member.

Abstract: The invention relates to a power semiconductor module comprising at least one power semiconductor chip, and comprising a pressure apparatus which exerts a pressure on the top side of the power semiconductor chip when the power semiconductor module is fixed to a heat sink. In addition, a bonding wire which is arranged distant from the pressure element, is bonded to the top side. The invention also relates to methods for fabricating a power semiconductor module, and for fabricating a power semiconductor arrangement comprising a power semiconductor module and a heat sink.

Abstract: Provided are a heat sink package in which a semiconductor package and a heat sink are bound to each other and a method of fabricating the same. The heat sink package includes a heat sink having a cavity on an upper surface thereof; a metal layer formed on the bottom surface of the cavity; a solder paste layer formed on the metal layer; a substrate on the solder paste layer; and a lead and a semiconductor chip mounted on the substrate.

Abstract: Disclosed is a semiconductor device including a SiC substrate and a heat conductor formed in a hole in the SiC substrate and made of a linear structure of carbon elements.

Abstract: A heat-conductive package structure includes a carrier board having a first surface and an opposing second surface and formed with a through opening passing the carrier board; a first heat-conductive structure including a heat-conductive hole in the through opening, a first heat-conductive sheet on the carrier board, and a second heat-conductive sheet on the carrier board, wherein the first and second heat-conductive sheets are conductively connected by the heat-conductive hole; a first dielectric layer formed on the first surface of the carrier board and formed with a first opening for exposing the first heat-conductive sheet; a second dielectric layer formed on the second surface of the carrier board and formed with at least a second opening for exposing a portion of the second heat-conductive sheet; and a second heat-conductive structure formed in the second opening and mounted on the second heat-conductive sheet.

Abstract: An optoelectronic semiconductor package for packaging a heat source capable of emitting light includes a base, a seal member, and a plurality of heat-dissipation elements. The base carries and touches the heat source and has a plurality of openings formed thereon, and the seal member is used to seal the heat source on the base. Each of the heat-dissipation elements is inserted in one of the corresponding openings, and the heat-dissipation element placed in the corresponding opening is deformed to result in a tight coupling between the heat-dissipation element and the base.

Abstract: A semiconductor package according to the present invention includes a substrate; first and second semiconductor chips mounted on a first surface of the substrate; and a heat-radiation sheet. The heat-radiation sheet includes a heat-transferable conductive layer and first and second insulating layers formed on top and bottom surfaces of the heat-transferable conductive layer, respectively. The heat-radiation sheet includes a first portion arranged between the first semiconductor chip and the second semiconductor chip; and a second portion extending at least a side of the first portion. The second portion is connected to the substrate. The second insulating layer of the second portion is formed to expose a part of the heat-transferable conductive layer.

Abstract: The present invention provides for a resin mixture that comprises a highly structured resin 40 and a less structured resin 50. The highly structured resin 40 and the less structured resin 50 are mixed to a ratio of between 1:9 and 4:1 by volume, with a more particular ratio of 1:5 to 3:1. The highly structured resin forms ordered micro regions and the ordered micro regions impose order on surrounding less structured resin molecules. The micro regions are essentially groups of the HS resin that will naturally form order structures.

Abstract: An apparatus is provided having an integrated circuit device disposed on a printed circuit board and a heat dissipation device on the integrated circuit device. An actuation screw in a spring plate is urged against a portion of the heat dissipation device by tightening the actuation screw. The actuation screw may be prevented from being tightened beyond a mechanical constraint corresponding to a pre-set calibration for the specific compressive force, which may be greater than or equal to a minimum compressive force corresponding to the greater of a minimum thermal interface pressure and a minimum contact interface pressure. Additionally, a method is provided in which the actuation screw is tightened, but prevented from being tightened beyond the mechanical constraint.

Abstract: Adjustable threaded cores for LED thermal management. The cores provide a direct thermal path between a LED and a heat sink while minimizing gaps and stresses between materials. The system includes a heat generating object, a first substrate housing containing a threaded hole beginning adjacent to the heat generating object, a second substrate having compatible threading with the threaded hole, and a third substrate including a heat sink. The second substrate has a higher thermal conductivity in comparison to the first substrate. The threaded hole and threaded core may terminate adjactent to the heat sink or may extent into the heat sink.

Abstract: A method of forming a package structure includes providing a plurality of dies; attaching the plurality of dies onto a heat-dissipating plate; and sawing the heat-dissipating plate into a plurality of packages, each including one of the plurality of dies and a piece of the heat-dissipating plate.

Abstract: A heat slug is provided for a package structure, including a main body and a plurality of protrusions. The main body has a surface in which at least one ditch is defined. Each protrusion is connected to and extends from the main body and has a surface in which a plurality of dimples is defined.

Abstract: In an embodiment, an integrated heat sink for a microchip includes a substrate having a plurality of interconnected electronic devices formed in a plurality of layers. At least one heat sink element is interposed within the layers and includes a microchannel to provide a fluid flow path for heat transfer. Other embodiments include a method of making an integrated heat sink for a microchip.

Abstract: A system for cooling a semiconductor includes a heat sink in thermal contact with the semiconductor, a thermal interface material (TIM) layer disposed between the heat sink and the semiconductor, and a picture frame support disposed between a substrate of the semiconductor and the heat sink, wherein the picture frame support encloses at least a portion of the semiconductor in a plane between the substrate and the heat sink, and wherein the picture frame support has a height that is greater than a height of the semiconductor.

Abstract: A semiconductor package with a heat dissipating device and a fabrication method of the semiconductor package are provided. A chip is mounted on a substrate. The heat dissipating device is mounted on the chip, and includes an accommodating room, and a first opening and a second opening that communicate with the accommodating room. An encapsulant is formed between the heat dissipating device and the substrate to encapsulate the chip. A cutting process is performed to remove a non-electrical part of structure and expose the first and second openings from the encapsulant. A cooling fluid is received in the accommodating room to absorb and dissipate heat produced by the chip. The heat dissipating device covers the encapsulant and the chip to provide a maximum heat transfer area for the semiconductor package.

Abstract: A heat dissipation device to be mounted on a heat-generating component of a graphics card includes a base in contact with the heat-generating component, a heat dissipating member placed on the base, a fan mounted on the base adjacent to an end of the base, and a covering body. The fan is located closely to the heat dissipating member and generates airflow to the heat dissipating member. The dissipating member has a cellular structure integrally formed therein. The covering body includes a top wall in contact with a top of the dissipating member and a sidewall extending downwardly from an edge of the top wall and surrounding the dissipating member and the fan. The cellular structure comprises a plurality of elongated passages extending from the fan to another end of the base away from the fan.

Abstract: A heat dissipation plate having a lamination of a copper layer, a molybdenum layer and a graphite layer, and outer copper layers each provided on a surface of the lamination, is disclosed. And also a semiconductor device using the heat dissipation plate is disclosed.

Abstract: An integrated circuit die includes a substrate having a front surface and a back surface, wherein the substrate front surface has electrical circuits formed thereon, and the substrate back surface has a plurality of metal layers formed thereon. The plurality of metal layers comprises at least one layer having a thickness of greater than about ten micrometers. The outermost metal layer may be mechanically and thermally bonded to a package using a die attach layer comprising a thermally conductive reflowable material. The invention advantageously facilitates the dissipation of heat from the integrated circuit die.

Abstract: A semiconductor device having sufficiently high heat dissipation performance while inhibiting an increase in the area of a chip is provided. In semiconductor device 1, a plurality of HBTs 20 and a plurality of diodes 30 are one-dimensionally and alternately arranged on semiconductor substrate 10. Anode electrode 36 of diode 30 is connected to emitter electrode 27 of HBT 20 via common emitter wiring 42. Diode 30 works as heat dissipating elements dissipating to semiconductor substrate 10 the heat transmitted through common emitter wiring 42 from emitter electrode 27, and also works as a protection diode connected in parallel between an emitter and a collector of HBT 20.

Abstract: An array-type package encasing one or more semiconductor devices. The package includes a dielectric substrate having opposing first and second sides with a plurality of electrically conductive vias and a centrally disposed aperture extending from the first side to the second side. A heat slug has a mid portion extending through the aperture, a first portion adjacent the first side of the substrate with a cross sectional area larger than the cross sectional area of the aperture and an opposing second portion adjacent the second side of the substrate. One or more semiconductor devices are bonded to the first portion of the heat slug and electrically interconnected to the electrically conductive vias. A heat spreader having a first side and an opposing second side is spaced from the semiconductor devices and generally parallel with the heat slug, whereby the semiconductor devices are disposed between the heat spreader and the heat slug.

Abstract: An integrated circuit chip having a heat spreader comprising CVD diamond extending along the chip support body and thermal vias extending through the support body in regions free of active devices or functional elements. The thermal vias may thermally conductive and electrically conductive or may be thermally conductive and electrically resistive. The integrated circuit chips may be 3D integrated circuit chips.

Abstract: A semiconductor device includes: a semiconductor chip mounted on a mounting substrate; a first resin filling a gap between the chip and the substrate; a frame-shaped stiffener surrounding the chip; a first adhesive for bonding the stiffener to the substrate; a lid for covering the stiffener and an area surrounded by the stiffener; and a second resin filling a space between the stiffener and the chip. A thermal expansion coefficient of the second resin is smaller than that of the first resin. The first resin includes an underfill part filling a gap between the chip and the substrate and a fillet part extended from the chip region.

Abstract: A semiconductor device 10 includes a silicon substrate 20 having a first interconnection layer 24, a second interconnection layer 26, and grooves 22 provided at the second main surface 20b. Mounted on the substrate 20 are one or more semiconductor chips 30 having chip external terminals 32 electrically connected to the first interconnection layer; and one or more peripheral chips 40 electrically connected to the first interconnection layer on the silicon substrate. By the provision of the grooves 22, the heat radiating property is improved.

Abstract: An apparatus includes a metallization region including a plurality of metal layers on a device layer of a substrate, a via extending through the substrate and the device layer, and a heat spreading and stress engineering region in the substrate and adjacent to the device layer. The via contacts a metal layer in the metallization region.

Abstract: A heat dissipation device includes a heat sink, a retention module and a locking device for securing the heat sink to the retention module. The heat sink includes a base for contacting with a heat-generating component. The retention module includes a bottom wall and a first spring clip secured at one side thereof. The locking device is pivotably connected to the retention module and includes a second spring clip attached thereon. The heat sink rests on the bottom wall of the retention module with an end thereof being pressed by the first spring clip, and an opposite end thereof being pressed by the second spring clip. The locking device can be at a released position where the locking device is pivotable, so that the heat sink is removable from the retention module, and a locked position where the locking device presses the base of the heat sink.

Abstract: A semiconductor device mountable to a substrate is provided. The device includes a semiconductor die and an electrically conductive attachment region having a first attachment surface and a second attachment surface. The first attachment surface is arranged for electrical communication with the semiconductor die. An interlayer material is formed on the second attachment surface of the electrically conductive attachment region. The interlayer material is a thermally conductive, dielectric material. A housing at least in part encloses the semiconductor die and the interlayer material.

Abstract: Discontinuous diamond particulate containing metal matrix composites of high thermal conductivity and methods for producing these composites are provided. The manufacturing method includes producing a thin reaction formed and diffusion bonded functionally graded interactive SiC surface layer on diamond particles. The interactive surface converted SiC coated diamond particles are then disposed into a mold and between the particles and permitted to rapidly solidify under pressure. The surface conversion interactive SiC coating on the diamond particles achieves minimal interface thermal resistance with the metal matrix which translates into good mechanical strength and stiffness of the composites and facilitates near theoretical thermal conductivity levels to be attained in the composite. Secondary working of the diamond metal composite can be performed for producing thin sheet product.

Abstract: Methods, apparatus and assemblies for enhancing heat transfer in electronic components using a flexible thermal pillow. The flexible thermal pillow has a thermally conductive material sealed between top and bottom conductive layers, with the bottom layer having a flexible reservoir residing on opposing sides of a central portion of the pillow that has a gap. The pillow may have roughened internal surfaces to increase an internal surface area within the pillow for enhanced heat dissipation. In an electronic assembly, the central portion of the pillow resides between a heat sink and heat-generating component for the thermal coupling there-between. During thermal cycling, the flexible reservoir of the pillow expands to retain thermally conductive material extruded from the gap, and then contracts to force such extruded material back into the gap. An external pressure source may contact the pillow for further forcing the extruded thermally conductive material back into the gap.

Abstract: A heat spreader is presented which can provide effective thermal management in a cost effective manner. The heat spreader includes a plurality of diamond particles arranged in a single layer surrounded by a metallic mass. The metallic mass cements the diamond particles together. The layer of diamond particles is a single particle thick. Besides the single layer of diamond particles, the metallic mass has substantially no other diamond particles therein. A thermal management system including a heat source and a heat spreader is also presented, along with methods for making and methods for use of such heat spreaders.

Abstract: A cooling apparatus for a circuit module having a substrate extending axially with an IC chip of a first type and IC chips of a second type mounted thereon, comprising: a first heat spreading element disposed to form a heat conduction path with the IC chip of the first type; and a second heat spreading element disposed to form a heat conduction path with the IC chips of the second type, wherein there is at least one IC chip of the second type mounted axially away from opposite sides of the IC chip of the first type, wherein the first type of IC chip is capable of generating a larger amount of heat than the second type of IC chips, and the first heat spreading element has a higher thermal conductivity than the second heat spreading element.

Abstract: In a package, a heat slug, encapsulated by molding compound, encases an integrated circuit device (IC). In an example embodiment, a semiconductor package structure comprises a substrate having conductive traces and pad landings. The conductive traces have pad landings. An IC is mounted on the substrate. The IC has bonding pads. With conductive wires, the IC bonding pads are connected to the pad landings, which in turn, are connected to the conductive traces. A heat slug, having predetermined height, is disposed on the substrate surface. The heat slug includes a plurality of mounting feet providing mechanical attachment to the substrate. A cavity in the heat slug accommodates the IC. A plurality of first-size openings surrounds the IC. A second-size opening constructed from one of the first size-openings, is larger than the first-size opening. The second size-opening facilitates the introduction of molding compounds into the cavity of the heat slug.

Abstract: A plurality of disc-shaped substrates carry light emitters and are axially stacked, spaced apart, in a metal housing to dissipate the heat produced by the light emitters. The housing comprises mutually connected elongate planar ribs that abut the light emitters or substrates for thermally connecting the light emitters to the housing. The ribs have shoulders. The substrates are received between the ribs and abut the shoulders. The shoulders are positioned proximate each light emitter in intimate contact with the substrate for efficient heat dissipation.

Abstract: A driver module structure includes a flexible circuit board (2) provided with a wiring pattern (7), a semiconductor device mounted on the flexible circuit board (2), and an electrically conductive heat-radiating member (4) joined to the semiconductor device. The wiring pattern (7) includes a ground wiring pattern (8). The flexible circuit board (2) has a cavity (9) that exposes a portion of the ground wiring pattern (8). The exposed portion of the ground wiring pattern (8) and the heat-radiating member (4) are connected to establish electrical continuity via a member (11) that is fitted into the cavity (9).

Abstract: A heat slug includes a heat spreading member and a supporting member. The supporting member extends outwardly from the edge of the heat spreading member. The tips of the supporting member are formed with a plurality of contact portions, wherein each said contact portion has a bottom face inclined to the surface of the chip carrier art an angle of more that 5 degrees.

Abstract: A semiconductor apparatus having improved thermal fatigue life is provided by lowering maximum temperature on jointing members and reducing temperature change. A jointing member is placed between a semiconductor chip and a lead electrode, and a thermal stress relaxation body is arranged between the chip and a support electrode. Jointing members are placed between the thermal stress relaxation body and the chip and between the thermal stress relaxation body and the support electrode. A second thermal stress relaxation body made from a material having a thermal expansion coefficient between the coefficients of the chip and the lead electrode is located between the chip and the lead electrode. The first thermal stress relaxation body is made from a material which has a thermal expansion coefficient in between the coefficients of the chip and the support electrode, and has a thermal conductivity of 50 to 300 W/(m·° C.).

Abstract: A cooling system for devices having power semiconductors and a method for cooling the device is disclosed. In one embodiment, the cooling system has printed circuit boards arranged on a circuit carrier in plug-in contact strips. The cooling system itself has a cooling plate, which is mounted in a pivotable manner on one of the plug-in contact strips in the region of the power semiconductor component. The cooling plate can be pivoted about an axis in such a way that it assumes a first position, which is pivoted away from the printed circuit board, and a second position, in which the cooling plate bears on the power semiconductor component.

Abstract: A semiconductor package according to the present invention includes a substrate; first and second semiconductor chips mounted on a first surface of the substrate; and a heat-radiation sheet. The heat-radiation sheet includes a heat-transferable conductive layer and first and second insulating layers formed on top and bottom surfaces of the heat-transferable conductive layer, respectively. The heat-radiation sheet includes a first portion arranged between the first semiconductor chip and the second semiconductor chip; and a second portion extending at least a side of the first portion. The second portion is connected to the substrate. The second insulating layer of the second portion is formed to expose a part of the heat-transferable conductive layer.

Abstract: A heat sink for use with a high output LED light source is disclosed. The heat sink is used with an LED and conical reflector. The heat sink has a cylindrical back end holding the light emitting diode. The heat sink includes a conically shaped wall having an inner and outer surface and an open front end. The open front end has a rim with notches. The reflector has a front flat surface with arms which are fixed in the notches with a fastener. The heat sink includes a plurality of slits formed on the inner and outer surfaces extending between the back and front ends. A plurality of vanes extend radially from the inner surface. The heat sink is fabricated from a thermally conductive material. The conical shape of the heat sink, the slits and vanes increases exposed surface area to assist in dissipating heat generated from the LED.

Abstract: A semiconductor module with two cooling surfaces and method. One embodiment includes a first carrier with a first cooling surface and a second carrier with a second cooling surface. The first cooling surface is arranged in a first plane, the second cooling surface is arranged in a second plane, at an angle different from 0° relative to the first plane.

Abstract: A solder preform having multiple layers including a solder layer filled with additives interposed between two unfilled layers for improved wettability. A solder preform having a sphere which contains a solder material filled with additives, and an unfilled surface layer for improved wettability. A thermal interface material having a bonding component and an additive component which is a CTE modifying component and/or a thermal conductivity enhancement component. Active solders containing intrinsic oxygen getters.

Abstract: A metal thermal interface structure for dissipating heat from electronic components comprised a heat spreader lid, metal alloy that is liquid over the operating temperature range of the electronic component, and design features to promote long-term reliability and high thermal performance.

Abstract: An integrated power device module having a leadframe structure with first and second spaced pads and one or more common source-drain leads located between said first and second pads, first and second transistors flip chip attached respectively to said first and second pads, wherein the source of said second transistor is electrically connected to said one or more common source-drain leads, and a first clip attached to the drain of said first transistor and electrically connected to said one or more common source-drain leads. In another embodiment a partially encapsulated power quad flat no-lead package having an exposed top thermal drain clip which is substantially perpendicular to said with a folded stud exposed top thermal drain clip, and an exposed thermal source pad.

Abstract: A semiconductor module includes: a semiconductor element (13) having a working unit (11) and a guard ring unit (12); and heat radiation members (15, 14) arranged on an upper surface and a lower surface of the semiconductor element for cooling the semiconductor element. A passivation film (20) covers the guard ring but does not cover the working unit. The upper heat radiation member (15) is made of a flat metal plate connected to the working unit without contact with the passivation film. The upper heat radiation member is connected to the lower heat radiation member (14) in the thermo-conducting way.

Abstract: In a package, a heat slug, encapsulated by molding compound, encases an integrated circuit device (IC). In an example embodiment, a semiconductor package structure comprises a substrate having conductive traces and pad landings. The conductive traces have pad landings. An IC is mounted on the substrate. The IC has bonding pads. With conductive wires, the IC bonding pads are connected to the pad landings, which in turn, are connected to the conductive traces. A heat slug, having predetermined height, is disposed on the substrate surface. The heat slug includes a plurality of mounting feet providing mechanical attachment to the substrate. A cavity in the heat slug accommodates the IC. A plurality of first-size openings surrounds the IC. A second-size opening constructed from one of the first size-openings, is larger than the first-size opening. The second size-opening facilitates the introduction of molding compounds into the cavity of the heat slug.

Abstract: An integrated circuit includes an integrated circuit device, a micro-pores ceramic heat sink and a heat conductive medium. The micro-pores ceramic heat sink is placed on a surface of the integrated circuit device. The heat conductive medium is placed in between the integrated circuit device and the micro-pores ceramic heat sink with one surface joined to the integrated circuit device and the other surface to the micro-pores ceramic heat sink.

Abstract: An integrated heat spreader (IHS) having a groove and a cavity formed therein is disclosed. In one embodiment, the groove has an insulating layer formed therein, and a power conduit is mounted in the groove, the power conduit is electrically isolated from the IHS by the insulating layer, and the power conduit conducts a voltage relative to the IHS to deliver power to the cavity. In another embodiment, the IHS is soldered to a semiconductor die and a package substrate. In a further embodiment, the power conduit comprises an edge connector.

Abstract: Discontinuous diamond particulate containing metal matrix composites of high thermal conductivity and methods for producing these composites are provided. The manufacturing method includes producing a thin reaction formed and diffusion bonded functionally graded interactive SiC surface layer on diamond particles. The interactive surface converted SiC coated diamond particles are then disposed into a mold and between the particles and permitted to rapidly solidify under pressure. The surface conversion interactive SiC coating on the diamond particles achieves minimal interface thermal resistance with the metal matrix which translates into good mechanical strength and stiffness of the composites and facilitates near theoretical thermal conductivity levels to be attained in the composite. Secondary working of the diamond metal composite can be performed for producing thin sheet product.

Abstract: Standard solderless connectors extend from a molded package body supporting at least one high power LED. The package includes a relatively large metal slug extending completely through the package. The LED is mounted over the top surface of the metal slug with an electrically insulating ceramic submount in-between the LED and metal slug. Electrodes on the submount are connected to the package connectors. Solderless clamping means, such as screw openings, are provided on the package for firmly clamping the package on a thermally conductive mounting board. The slug in the package thermally contacts the board to sink heat away from the LED. Fiducial structures (e,g., holes) in the package precisely position the package on corresponding fiducial structures on the board. Other packages are described that do not use a molded body.

Abstract: An IC package that employs top-side conduction cooling. The IC package has a low thermal resistance between a substrate housed within the package and the lid of the package. Thermal resistance is decreased by increasing the conduction cross-sections laterally through the package and lid and vertically from the package into the lid. The lid may also be modified with an extended mesa portion that reduces the gap between the lid and the IC. A thermally conductive spacer may also be interposed between the IC and the lid. Also, the package housing body and lid may be made from high thermal conductivity materials having thermal conductivities of 50 W/mK or greater with matching CTE between the lid and the package.

Abstract: A chip scale package has a semiconductor MOSFET die which has a top electrode surface covered with a layer of a photosensitive liquid epoxy which is photolithographically patterned to expose portions of the electrode surface and to act as a passivation layer and as a solder mask. A solderable contact layer is then formed over the passivation layer. The individual die are mounted drain side down in a metal clip or can with the drain electrode disposed coplanar with a flange extending from the can bottom. The metal clip or drain clip has a plurality, a parallel spaced fins extending from its outwardly facing surface.