Abstract: A photoelectric conversion device is caused to have a quick response against incident light by designing the photosensitive portion in such a way that photocurrent does flow only in the direction perpendicular to a semiconductor layer. The device is comprised of the semiconductor and a pair of electrodes so that the layer and the electrodes have the same area and the same shape.
Type:
Grant
Filed:
August 16, 1988
Date of Patent:
February 16, 1993
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
Abstract: Annealed copper foil (12) is coated with chromium film (16), followed by coating with an appropriate thickness of gold film (14) and is thermocompression bonded to an aluminum metallized substrate (18) on a silicon chip (30) to provide solderable, high current contacts to the chip. The foil is formed into appropriate electrical network-contact patterns (40) and is bonded to the silicon chip only where aluminum metallization exists on the chip. Leaf (wing) portions (46) of the foil extend beyond the boundaries of the silicon chip for subsequent retroflexing over the foil to provide electrical contact at predesignated locations (49). External contacts to the foil are made by penetrating through a ceramic lid positioned directly above the foil area. Thus, direct thermocompression bonding of a principally copper foil to aluminum semiconductor pads can replace current gold detent/bump connections by securing a copper conductor to a silicon chip through an intermetallic AuAl.sub.2 link and an aluminum stratum.
Type:
Grant
Filed:
October 26, 1990
Date of Patent:
February 2, 1993
Assignee:
General Electric Company
Inventors:
Constantine A. Neugebauer, Homer H. Glascock, II, Kyung W. Paik, James G. McMullen, Martha M. Neugebauer
Abstract: This invention relates generally to structure and method for corrosion- and stress-resistant interconnecting metallurgy, and more specifically to new structures and methods for corrosion- and stress-resistant interconnecting multilayer metallurgical pad comprising sequentially deposited layers of chromium, nickel and noble or relatively noble metal as the interconnecting metallurgy, or multilayer metallurgical pad comprising sequentially deposited layers of chromium, soluble noble metal, nickel and noble or relatively noble metal as the interconnecting metallurgy. This invention also relates to an improved multilayer metallurgical pad or metallurgical structure for mating at least a portion of a pin or a connector or a wire to a substrate.
Type:
Grant
Filed:
April 10, 1991
Date of Patent:
December 29, 1992
Assignee:
International Business Machines Corporation
Inventors:
Giulio DiGiacomo, Armando S. Cammarano, Nunzio DiPaolo