Abstract: A manufacturing method of a bump structure is provided. A substrate having at least one pad and a passivation layer is provided. The passivation layer has at least one first opening exposing the pad. An insulating layer is formed on the passivation layer. The insulating layer has at least one second opening located above the first opening. A metal layer is formed on the insulating layer. The metal layer electrically connects the pad through the first and second openings. A first bump is formed in the first and second openings. A second bump is formed on the first bump and a portion of the metal layer. The metal layer not covered by the second bump is partially removed by using the second bump as a mask, so as to form at least one UBM layer. The first bump is completely covered by the UBM layer and the second bump.

Abstract: Technique capable of achieving reliability improvement of a semiconductor device even if temperature rising of an operation guarantee temperature of the semiconductor device is performed is provided. Gap portions are provided among a plurality of pads, and a glass coat composed of, for example, a silicon oxide film or a silicon nitride film is embedded in the gap portions. The glass coat is provided in order to secure electrical insulation among the pads, and coats outer edge portions of the pads. Trenches are formed so as to be adjacent to regions, which are coated with the glass coat, of the outer edge portions of the pads.

Abstract: A first transistor group, a second transistor group, and an electrode pad are formed on a semiconductor substrate. A first protective film is formed so as to cover the semiconductor substrate except for an upper region of the electrode pad. The second protective film which generates a stress in a projecting direction is formed so as to cover the first protective film except for an upper region of the first transistor group. A transistor ability of the first transistor group is varied to be relatively higher due to a presence of the second protective film, based on a transistor ability of the second transistor group, as a reference.

Abstract: A wafer level package includes an epoxy layer formed on an adhesive covered substrate during manufacturing for securing electrical components in place prior to being embedded in a molded material. An electrically conductive block is fixed in the epoxy layer. Vias are formed for accessing face up component contacts using a metalized layer on the surface of the molded material. After stripping the adhesive and substrate, the epoxy layer is penetrated to expose electrical contacts for face down components. An electrical connection is made between the face up and face down components using the block. Optionally, a dielectric layer covers the molded material and a second metalized layer placed on the dielectric layer to carry another electrical component embedded in a second dielectric layer covering the first dielectric layer. Thus a stacked component arrangement including multiple die and passive components is effectively fabricated into the wafer level package.

Abstract: A device includes a substrate, a metal pad over the substrate, and a passivation layer having a portion over the metal pad. A Post-Passivation Interconnect (PPI) line is disposed over the passivation layer and electrically coupled to the metal pad. An Under-Bump Metallurgy (UBM) is disposed over and electrically coupled to the PPI line. A passive device includes a portion at a same level as the UBM. The portion of the passive device is formed of a same material as the UBM.

Abstract: A semiconductor device includes plural electrode pads arranged in an active region of a semiconductor chip, and wiring layers provided below the plural electrode pads wherein occupation rates of wirings arranged within the regions of the electrode pads are, respectively, made uniform for every wiring layer. To this end, in a region where an occupation rate of wiring is smaller than those in other regions, a dummy wiring is provided. On the contrary, when the occupation rate of wiring is larger than in other regions, slits are formed in the wiring to control the wiring occupation rate. In the respective wirings layers, the shapes, sizes and intervals of wirings below the respective electrode pads are made similar or equal to one another.

Abstract: A routing layer for a semiconductor die is disclosed. The routing layer includes traces interconnecting integrated circuit bond-pads to UBMs. The routing layer is formed on a layer of dielectric material. The routing layer includes conductive traces arranged underneath the UBMs as to absorb stress from solder bumps attached to the UMBs. Traces beneath the UBMs protect parts of the underlying dielectric material proximate the solder bumps, from the stress.

Abstract: A module including a carrier and a semiconductor chip applied to the carrier. An external contact element is provided having a first portion and a second portion extending perpendicular to the first portion, wherein a thickness of the second portion is smaller than a thickness of the carrier.

Abstract: An integrated circuit (IC) including a set of isolated wire structures disposed within a layer of the IC, methods of manufacturing the same and design structures are disclosed. The method includes forming adjacent wiring structures on a same level, with a space therebetween. The method further includes forming a capping layer over the adjacent wiring structures on the same level, including on a surface of a material between the adjacent wiring structures. The method further includes forming a photosensitive material over the capping layer. The method further includes forming an opening in the photosensitive material between the adjacent wiring structures to expose the capping layer. The method further includes removing the exposed capping layer.

Abstract: There is provided a semiconductor device with which stress can be prevented from locally concentrating on an external connecting terminal on a post and thus damages of the external connecting terminal can be prevented. The semiconductor device includes a semiconductor chip, a sealing resin layer stacked on a surface of the semiconductor chip, and the post which penetrates the sealing resin layer in a stacking direction of the semiconductor chip and the sealing resin layer, protrudes from the sealing resin layer, and has a periphery of the protruding portion opposedly in contact with a surface of the sealing resin layer in the stacking direction.

Abstract: There are provided a semiconductor device capable of accurately determining whether a semiconductor chip is bonded to a solid-state device such as the other semiconductor chip parallelly with each other, a semiconductor chip used for the semiconductor device, and a method of manufacturing the semiconductor chip. The semiconductor chip includes a functional bump projected with a first projection amount from the surface of the semiconductor chip and electrically connecting the semiconductor chip to the solid-state device, and a connection confirmation bump projected with a second projection amount, which is smaller than the first projection amount, from the surface of the semiconductor chip and used for confirming the state of the electrical connection by the functional bump.

Abstract: A contiguous layer of graphene is formed on exposed sidewall surfaces and a topmost surface of a copper-containing structure that is present on a surface of a substrate. The presence of the contiguous layer of graphene on the copper-containing structure reduces copper oxidation and surface diffusion of copper ions and thus improves the electromigration resistance of the structure. These benefits can be obtained using graphene without increasing the resistance of copper-containing structure.

Abstract: Disclosed is a light emitting device including a substrate, a light emitting structure arranged on the substrate, the light emitting structure including a first semiconductor layer, a second semiconductor layer and an active layer arranged between the first semiconductor layer and the second semiconductor layer, a first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer, wherein the light emitting structure has a top surface including a first side and a second side which face each other, and a third side and a fourth side which face each other.

Abstract: The present disclosure provides an integrated circuit. The integrated circuit includes an interconnect structure formed on a substrate; a landing metal trace formed on the interconnect structure and coupled to the interconnect structure, wherein the landing metal trace includes a first width T defined in a first direction; and a metal bump post formed on and aligned with the landing metal trace, wherein the metal bump post includes a second width U defined in the first direction, and the second width U is greater than the first width T.

Abstract: Provided are embodiments of semiconductor chips having a redistributed metal interconnection directly connected to power/ground lines of an internal circuit are provided. Embodiments of the semiconductor chips include an internal circuit formed on a semiconductor substrate. A chip pad is disposed on the semiconductor substrate. The chip pad is electrically connected to the internal circuit through an internal interconnection. A passivation layer is provided over the chip pad. A redistributed metal interconnection is provided on the passivation layer. The redistributed metal interconnection directly connects the internal interconnection to the chip pad through a via-hole and a chip pad opening, which penetrate at least the passivation layer. Methods of fabricating the semiconductor chip are also provided.

Abstract: A semiconductor device has a substrate and first conductive layer formed over the substrate. An insulating layer is formed over the first substrate with an opening over the first conductive layer. A second conductive layer is formed within the opening of the insulating layer. A portion of the second conductive layer is removed to expose a horizontal surface and side surfaces of the second conductive layer below a surface of the insulating layer. The second conductive layer has non-linear surfaces to extend a contact area of the second conductive layer. The horizontal surface and side surfaces can be stepped surfaces or formed as a ring. A third conductive layer is formed over the second conductive layer. A plurality of bumps is formed over the horizontal surface and side surfaces of the second conductive layer. A semiconductor die is mounted to the substrate.

Abstract: A manufacturing method of a semiconductor device including an electrode having low contact resistivity to a nitride semiconductor is provided. The manufacturing method includes a carbon containing layer forming step of forming a carbon containing layer containing carbon on a nitride semiconductor layer, and a titanium containing layer forming step of forming a titanium containing layer containing titanium on the carbon containing layer. A complete solid solution Ti (C, N) layer of TiN and TiC is formed between the titanium containing layer and the nitride semiconductor layer. As a result, the titanium containing layer comes to be in ohmic contact with the nitride semiconductor layer throughout the border therebetween.

Abstract: In one embodiment, an interconnect structure between an integrated circuit (IC) chip and a substrate comprises a plurality of materials.

Abstract: Integrated circuit packages comprise vias, each of which extends from a pad in communication with an integrated circuit on a semiconductor chip through insulating material overlying the semiconductor chip to an attachment surface facing a substrate. The portion of each via proximate the attachment surface is laterally offset from the portion proximate the pad from which it extends in a direction away from the center of the semiconductor chip. Metallic material received in the vias mechanically and electrically interconnects the semiconductor chip to the substrate.

Abstract: A method of assembly of a semiconductor package includes treating the electrical contacts thereof by the application on the electrical contacts of a chemical composition comprising at least one ionic polar surfactant. A semiconductor package has a coating on the electrical contacts thereof, the coating comprising at least one ionic polar surfactant. A device includes a semiconductor package with electrical contacts on a circuit board, the electrical contacts having a coating that includes an ionic surfactant.

Abstract: A solder ball contact and a method of making a solder ball contact includes: a first insulating layer with a via formed on an integrated circuit (IC) chip and a metal pad; an under bump metallurgy (UBM) structure disposed within the via and on a portion of the first insulating layer, surrounding the via; a second insulating layer formed on an upper surface of an outer portion of the UBM structure that is centered on the via; and a solder ball that fills the via and is disposed above an upper surface of an inner portion of the UBM structure that contacts the via, in which the UBM structure that underlies the solder ball is of a greater diameter than the solder ball.

Abstract: A contiguous layer of graphene is formed on exposed sidewall surfaces and a topmost surface of a copper-containing structure that is present on a surface of a substrate. The presence of the contiguous layer of graphene on the copper-containing structure reduces copper oxidation and surface diffusion of copper ions and thus improves the electromigration resistance of the structure. These benefits can be obtained using graphene without increasing the resistance of copper-containing structure.

Abstract: The present invention aims at providing a semiconductor device capable of reliably preventing a wire bonded to an island from being disconnected due to a thermal shock, a temperature cycle and the like in mounting and capable of preventing remarkable increase in the process time. In the semiconductor device according to the present invention, a semiconductor chip is die-bonded to the surface of an island, one end of a first wire is wire-bonded to an electrode formed on the surface of the semiconductor chip to form a first bonding section and the other end of the first wire is wire-bonded to the island to form a second bonding section, while the semiconductor device is resin-sealed. A double bonding section formed by wire-bonding a second wire is provided on the second bonding section of the first wire wire-bonded onto the island.

Abstract: An IC package having multiple surfaces for interconnection with interconnection elements making connections from the IC chip to the I/O terminations of the package assembly which reside on more than one of its surfaces and which make interconnections to other devices or assemblies that are spatially separated.

Abstract: An integrated circuit package system includes a substrate, forming a resist layer having an elongated recess over the substrate, forming a via in the substrate below the elongated recess, and forming an elongated bump in the elongated recess over the via.

Abstract: According to one embodiment, there is provided a semiconductor package manufacturing method utilizing a support body in which a first layer is stacked on a second layer, the method including: a first step of forming an opening in the first layer to expose the second layer therethrough; a second step of arranging a semiconductor chip on the second layer through the opening; a third step of forming a resin portion on the first layer to cover the semiconductor chip; and a fourth step of forming a wiring structure on the resin portion so as to be electrically connected to the semiconductor chip.

Abstract: A method for making an integrated circuit system with one or more copper interconnects that are conductively connected with a substrate includes depositing and patterning a first dielectric layer to form a first via and filling the first via through the first dielectric layer with a copper material. The method further includes depositing and patterning a second dielectric layer in contact with the first dielectric layer to form a second via, and forming a diffusion barrier layer. Moreover, the method includes depositing and patterning a photoresist layer on the diffusion barrier layer, and at least partially filling the second via with a metal material. The metal material is conductively connected to the copper material through the diffusion barrier layer. The method further includes removing the photoresist and the diffusion barrier layer not covering by the metal material.

Abstract: An integrated circuit structure includes a bond pad; an Mtop pad located directly underlying the bond pad; an Mtop-1 pad having at least a portion directly underlying the Mtop pad, wherein at least one of the Mtop pad and the Mtop-1 pad has a horizontal dimension smaller than a horizontal dimension of the bond pad; a plurality of vias interconnecting the Mtop pad and the Mtop-1 pad; and a bond ball on the bond pad. Each of the Mtop pad and the Mtop-1 pad has positive enclosures to the bond ball in all horizontal directions.

Abstract: An under-bump metallization (UBM) structure in a semiconductor device includes a copper layer, a nickel layer, and a Cu—Ni—Sn intermetallic compound (IMC) layer between the copper layer and the nickel layer.

Abstract: A dished micro-bump structure with self-aligning functions is provided. The micro-bump structure takes advantage of the central concavity for achieving the accurate alignment with the corresponding micro-bumps.

Abstract: A conductive bump formed on an electrode surface of an electronic component. This conductive bump is composed of a plurality of photosensitive resin layers having different conductive filler contents. Consequently, this conductive bump is able to realize conflicting functions, namely, improvement in adhesion strength with the electrode and reduction of contact resistance.

Abstract: A protection layer formed of a CuGeyNz layer, a CuSixNz layer, a CuSixGeyNz layer or combinations thereof is formed on an under-bump metallurgy (UBM) layer for preventing the UBM layer from chemical attack and oxidation during subsequent processes.

Abstract: A semiconductor device is provided and includes a semiconductor die, and a plurality of bond pads having exposed surfaces arranged in an alternating interleaved pattern on the semiconductor die. Each of the surfaces of the bond pads have a first bond placement area that overlaps with a second bond placement area, with the first bond placement area having a major axis that is orthogonal to a major axis of the second bond placement area. A connecting bond is located at an intersection of the major axes of the first bond placement area and the second bond placement area on one or more of the bond pads.

Abstract: A semiconductor package includes a first semiconductor chip having first bumps which are projectedly formed thereon; a first copper foil attachment resin covered on the first semiconductor chip to embed the first semiconductor chip, and formed such that a first copper foil layer attached on an upper surface of the first copper foil attachment resin is electrically connected with the first bumps; a second copper foil attachment resin including a second copper foil layer which is electrically connected with the first copper foil layer, and disposed on the first copper foil attachment resin; and a second semiconductor chip embedded in the second copper foil attachment resin in such a way as to face the first semiconductor chip, and having second bumps formed thereon which are electrically connected with the second copper foil layer.

Abstract: A method of manufacture of an integrated circuit packaging system includes: forming a post of multiple plating layers having a base end with an inward protrusion, a connect riser, and a top end opposite the base end; positioning an integrated circuit device having a perimeter end facing the connect riser and the inward protrusion; attaching a bond wire directly on the inward protrusion and the integrated circuit device; and applying an encapsulation over the integrated circuit device, the bond wire, the inward protrusion, and around the post, the encapsulation exposing a portion of the base end and the top end of the post.

Abstract: Embodiments disclosed herein may relate to supply voltage or ground connections for integrated circuit devices. As one example, two or more supply voltage bond fingers may be connected together via one or more electrically conductive interconnects.

Abstract: A device and a method for realizing reliable electrical contacts at low temperature and low pressure between conducting materials on, for example, different substrates are disclosed. In one aspect, a rough and brittle intermetallic layer is formed on a conducting material on a first substrate. A soft solder material layer on the other substrate is used for contacting the brittle and rough intermetallic layer that will break. As the solder material is relatively soft, contact between the broken intermetallic layer and the solder material can be realized over a large portion of the surface area. At that stage, a second intermetallic layer is formed between the solder material and the first intermetallic layer realizing electrical contact.

Abstract: Provided is a connecting part for a semiconductor device including a semiconductor element, a frame, and a connecting part which connects the semiconductor element and the frame to each other, in which an interface between the connecting part and the semiconductor element and an interface between the connecting part and the frame respectively have the area of Al oxide film which is more than 0% and less than 5% of entire area of the respective interfaces. The connecting part has an Al-based layer and first and second Zn-based layers on main surfaces of the Al-based layer, a thickness ratio of the Al-based layer relative to the Zn-based layers being less than 0.59.

Abstract: A semiconductor device has a semiconductor die with bond pads formed on a surface of the semiconductor die. A UBM is formed over the bond pads of the semiconductor die. A fusible layer is formed over the UBM. The fusible layer can be tin or tin alloy. A substrate has bond pads formed on a surface of the substrate. A plurality of stud bumps containing non-fusible material is formed over the bond pads on the substrate. Each stud bump includes a wire having a first end attached to the bond pad of the substrate and second end of uniform height electrically connected to the bond pad of the semiconductor die by reflowing the fusible layer or applying thermal compression bonding. An underfill material is deposited between the semiconductor die and substrate. An encapsulant is deposited over the semiconductor die and substrate.

Abstract: Some exemplary embodiments of a multi-chip semiconductor package utilizing a semiconductor substrate and related method for making such a semiconductor package have been disclosed. One exemplary embodiment comprises a first semiconductor device including, on a surface thereof, a first patterned dielectric layer, a conductive redistribution layer, a second patterned dielectric layer, and a second semiconductor device. The conductive redistribution layer connects to a first and a second patterned conductive attach material for connecting the first and second semiconductor devices to provide coplanar electrical connections for mounting on a printed circuit board. In one embodiment, the first semiconductor device is a diode having anode and cathode contacts on an upper surface thereof, and the second semiconductor device is an IGBT.

Abstract: A semiconductor chip includes a redistribution interconnect that is implemented by shorting bumps, and a semiconductor package and a system each including the semiconductor chip. The semiconductor chip includes a semiconductor substrate, a passivation film disposed on the semiconductor substrate, and a plurality of pseudo bumps disposed on the passivation film. Each pseudo bump is directly connected to adjacent pseudo bumps to form at least one redistribution interconnect.

Abstract: Structures are provided with raised buffer pads for solder bumps. Methods are also provided for forming the raised buffer pads for solder bumps. The method includes forming a raised localized buffer pad structure on a tensile side of a last metal layer of a solder bump connection. The raised localized buffer pad structure increases a height of a portion of a pad structure of the solder bump connection with respect to a compressive side of the last metal layer.

Abstract: A semiconductor device includes a semiconductor chip having an element formation surface on which at least one element is formed and including a plurality of electrode pads formed on the element formation surface, an interconnect substrate having a principal surface facing the element formation surface of the semiconductor chip and including a plurality of connection pads formed at positions of the principal surface facing the respective corresponding electrode pads, and a plurality of solder bumps provided between the respective corresponding electrode pads and connection pads, and configured to electrically connect the respective corresponding electrode pads and connection pads together. An UBM layer is formed on a portion of each solder bump closer to the corresponding electrode pad and a barrier metal layer is formed on a portion of each solder bump closer to the corresponding connection pad, and the two layers have substantially the same composition of major materials.

Abstract: One aspect of the present invention is a method of mounting a semiconductor chip having: a step of forming a resin coating on a surface of a path connecting a bonding pad on a surface of a semiconductor chip and an electrode pad formed on a surface of an insulating base material; a step of forming, by laser beam machining, a wiring gutter having a depth that is equal to or greater than a thickness of the resin coating along the path for connecting the bonding pad and the electrode pad; a step of depositing a plating catalyst on a surface of the wiring gutter; a step of removing the resin coating; and a step of forming an electroless plating coating only at a site where the plating catalyst remains.

Abstract: An electrical structure including a first substrate comprising a first electrically conductive pad, a second substrate comprising a second electrically conductive pad, and an interconnect structure electrically and mechanically connecting the first electrically conductive pad to the second electrically conductive pad. The interconnect structure comprises a non-solder metallic core structure, a first solder structure, and a second solder structure. The first solder structure electrically and mechanically connects a first portion of the non-solder metallic core structure to the first electrically conductive pad. The second solder structure electrically and mechanically connects a second portion of the non-solder metallic core structure to the second electrically conductive pad.

Abstract: A semiconductor package includes: a dielectric layer having opposing first and second surfaces and side surfaces; a copper wiring layer disposed on the first surface of the dielectric layer and having extension pads; a surface processing layer disposed on the wiring layer; a semiconductor chip disposed on the wiring layer and electrically connected to the surface processing layer; and an encapsulant disposed on the first surface of the dielectric layer for encapsulating the semiconductor chip, the wiring layer and the surface processing layer while exposing the second surface of the dielectric layer. Further, vias are disposed between the side surfaces of the dielectric layer and the encapsulant such that the extension pads are exposed from the vias so as for solder balls to be disposed thereon. Due to improved electrical connection between the copper and solder materials, the electrical connection quality of the package is improved.

Abstract: It is an objective to provide a semiconductor device with low leak current. The semiconductor device includes a plurality of ground side electrodes and a plurality of signal side electrodes arranged on a semiconductor substrate in an alternating manner; a plurality of control electrodes arranged respectively between each pair of a ground side electrode and a signal side electrode; a ground side electrode connecting section that connects the ground side electrodes to each other; a signal side electrode connecting section that connects the signal side electrodes to each other; and ground side lead wiring and signal side lead wiring that extend respectively from a region near one end and a region near another end of an arranged electrode section, in which the ground side electrodes and the signal side electrodes are arranged in an arrangement direction, away from the arranged electrode group in the arrangement direction.

Abstract: Micro-addition of a metal to a Sn-based lead-free C4 ball is employed to enhance reliability. Specifically, a metal having a low solubility in Sn is added in a small quantity corresponding to less than 1% in atomic concentration. Due to the low solubility of the added metal, fine precipitates are formed during solidification of the C4 ball, which act as nucleation sites for formation multiple grains in the solidified C4 ball. The fine precipitates also inhibit rapid grain growth by plugging grain boundaries and act as agents for pinning dislocations in the C4 ball. The grain boundaries enable grain boundary sliding for mitigation of stress during thermal cycling of the semiconductor chip and the package on the C4 ball. Further, the fine precipitates prevent electromigration along the grain boundaries due to their pinned nature.

Abstract: A solderable contact for use with an electrical component includes a pad metallization on a substrate, and an under bump metallization over at least part of the pad metallization. The under bump metallization is in an area for receiving solder. The pad metallization is structured to reveal parts of the substrate surface. The under bump metallization is in direct contact with the parts of the substrate.

Abstract: A flip chip interconnect has a tapering interconnect structure, and the area of contact of the interconnect structure with the site on the substrate metallization is less than the area of contact of the interconnect structure with the die pad. Also, a bond-on-lead or bond-on-narrow pad or bond on a small area of a contact pad interconnection includes such tapering flip chip interconnects. Also, methods for making the interconnect structure include providing a die having interconnect pads, providing a substrate having interconnect sites on a patterned conductive layer, providing a bump on a die pad, providing a fusible electrically conductive material either at the interconnect site or on the bump, mating the bump to the interconnect site, and heating to melt the fusible material.