Abstract: A semiconductor housing is provided that includes a metal support and a semiconductor body, a bottom side thereof being connected to the metal support. The semiconductor body has metal surfaces that are connected to pins by bond wires and a plastic compound, which completely surrounds the bond wires and partially surrounds the semiconductor body. The plastic compound has an opening on the top side of the semiconductor body, and a barrier is formed on the top side of the semiconductor body. The barrier has a top area and a base area spaced from the edges of the semiconductor body and an internal clearance of the barrier determines a size of the opening. Whereby, a portion of the plastic compound has a height greater than the barrier, and a fixing layer is formed between the base area of the barrier and the top side of the semiconductor body.

Abstract: A light-emitting diode (LED) and manufacturing method thereof are disclosed. The LED includes a transparent substrate, a plurality of transparent conductive layers, a plurality of metal circuits, and a LED chip. The LED chip is suitable for emitting a light and a portion of the light emits toward the transparent substrate. The manufacturing method of LED includes the following steps. First, a transparent conductive layer is formed on the transparent substrate. Next, a conductive pattern is formed by etching transparent conductive layer. The intersection metal circuit is formed by disposing the metal on a portion of the transparent conductive layer. Finally, the LED chip is disposed on the metal circuit so that the LED chip is electrically connected to the metal circuit.

Abstract: The present invention discloses a light emitting package, including: a base; a light emitting device on the base; an electrical circuit layer electrically connected to the light emitting device; a screen member having an opening and disposed on the base adjacent to the light emitting device; and a lens covering the light emitting device, wherein a width of a cross-sectional shape of the screen member is larger than a height of the cross sectional shape of the screen member, wherein the lens is disposed on the screen member, and wherein the lens is connected to an uppermost surface of the screen member.

Abstract: The LED unit 100 comprises a plurality of the LED module 1 and the heat radiation plate. Each the LED module 1 comprises the LED chip and the package for incorporating the LED chip therein; the package has the electrical insulation property. Each the package comprises the sub-mount member which is located between the LED chip and the heat radiation plate and which has heat conductivity; these are integrally formed. The LED modules are arranged on the first surface of the heat radiation plate. This configuration makes it possible for the LED unit to efficiently disperse the heat in the LED chip 10 to the heat radiation plate.

Abstract: A light emitting device includes a solid light-emitting element; a mounting substrate mounting the solid light-emitting element thereon; an encapsulating member encapsulating the solid light-emitting element; and a lead frame electrically connected to the solid light-emitting element through a wire. The lead frame is arranged on a rear surface of the mounting substrate, and the mounting substrate includes a front mounting surface on which the solid light-emitting element is mounted. The front mounting surface having a smooth surface region covered with the encapsulating member. The mounting substrate further includes a wire hole through which the wire extends from the front mounting surface of the mounting substrate to the rear surface thereof.

Abstract: There is provided a light emitting display apparatus including at least a light emitting element and a thin film transistor (TFT) for driving the light emitting element, characterized in that a mechanism is provided in which a semiconductor constituting the TFT is irradiated with at least a part of light whose wavelength is longer than a predetermined wavelength among the light emitted by the light emitting element.

Abstract: The invention relates to a substantially transparent electronic device comprising a first contact surface provided with a first pattern of electrically conductive lines and a second contact surface provided with a second pattern of electrically conductive lines, the first contact surface extending parallel to the second contact surface, wherein the first pattern is rotationally displaced with respect to the second pattern by an angle between 15 and 165 degrees. The electrically conductive lines of the said first pattern and the said second pattern are substantially not transparent for visible light and are preferably used as shunting lines. The invention further relates to a method of manufacturing such device.

Abstract: An integrally packaged optronic integrated circuit device including an integrated circuit die containing at least one of a radiation emitter and radiation receiver and having a transparent packaging layer overlying a surface of the die, the transparent packaging layer having an opaque coating adjacent to edges of the layer.

Abstract: Disclosed herein is a light-emitting element including: a first conductivity type semiconductor layer; a light-emitting functional layer formed on the first conductivity type semiconductor layer; a second conductivity type semiconductor layer formed on the light-emitting functional layer; a first conductivity type electrode which has continuity with the exposed portion of the first conductivity type semiconductor layer; a second conductivity type electrode which has continuity with the second conductivity type semiconductor layer; an insulating layer which lies between the light-emitting functional layer, second conductivity type semiconductor layer and second conductivity type electrode on one part and the first conductivity type electrode on the other part; and an annex insulating layer annexed to the insulating layer to form a virtual diode having rectifying action in the opposite direction to that of a diode made up of the second conductivity type semiconductor layer, light-emitting functional layer and f

Abstract: A light emitting chip package includes a substrate, an insulation layer, a patterned electric conductive layer, a light emitting chip, an encapsulation, a plurality of thermal conductors and electrical conductors. The insulation layer is formed on a top surface of the substrate. The patterned electric conductive layer partially covers the insulation layer. The light emitting chip is arranged on the electric conductive layer. The encapsulation covers the light emitting chip and the electric conductive layer. The plurality of thermal conductors is formed at a bottom surface side of the substrate. The plurality of electrical conductors penetrates the insulation layer and connects the conductive layer with the thermal conductor. The plurality of electrical conductors is isolated from each other.

Abstract: An LED light module free of jumper wires has a substrate and multiple LED chips. The substrate has a positive side circuit, a negative side circuit, multiple first chip connection portions and multiple second connection portions. The first and second chip connection portions are respectively connected to the positive and negative side circuits, and are juxtaposedly and alternately arranged on the substrate so that a width between each first chip connection portion and a corresponding second chip connection portion is smaller than a width of each LED chip. Each LED chip can be directly mounted on corresponding first and second chip connection portions to electrically connect to the positive and negative side circuits. Accordingly, jumper wires for connecting the LED chips and the positive and negative side circuits can be removed to avoid broken jumper wires occurring when the LED light module is shipped or assembled.

Abstract: A semiconductor device is made by providing a semiconductor die having an optically active area, providing a leadframe or pre-molded laminated substrate having a plurality of contact pads and a light transmitting material disposed between the contact pads, attaching the semiconductor die to the leadframe so that the optically active area is aligned with the light transmitting material to provide a light transmission path to the optically active area, and disposing an underfill material between the semiconductor die and leadframe. The light transmitting material includes an elevated area to prevent the underfill material from blocking the light transmission path. The elevated area includes a dam surrounding the light transmission path, an adhesive ring, or the light transmission path itself can be the elevated area. An adhesive ring can be disposed on the dam. A filler material can be disposed between the light transmitting material and contact pads.

Abstract: A light-emitting device includes a substrate, a plurality of light-emitting elements mounted on one surface of the substrate, a first glass film provided to one surface of the substrate and having a plurality of apertures that form a light-reflecting frame surrounding the perimeter of each the light-emitting elements, and a second glass film provided to the other surface of the substrate. A coefficient of thermal expansion of the second glass film is greater than that of the substrate when a coefficient of thermal expansion of the first glass film is greater than that of the substrate, and a coefficient of thermal expansion of the second glass film is less than that of the substrate when a coefficient of thermal expansion of the first glass film is less than that of the substrate.

Abstract: An optical apparatus includes a substrate 1, a wiring pattern 8 formed on the substrate 1, a light-receiving element 3 and a light-emitting element 2 provided on the substrate 1 and spaced apart from each other in a direction x, a light-transmitting resin 4 covering the light-receiving element 3, a light-transmitting resin 5 covering the light-emitting element 2, and a light-shielding resin 6 covering the light-transmitting resin 4 and the light-transmitting resin 5. The wiring pattern 8 includes a first light-blocking portion 83 interposed between the light-shielding resin 6 and the substrate 1 and positioned between the light-receiving element 3 and the light-emitting element 2 as viewed in x-y plane. The first light-blocking portion 83 extends across the light-emitting element 2 as viewed in the direction x.

Abstract: A polarized white light emitting diode provides a polarized white light to decrease glare, and increase the extinction ratio. A LED chip is disposed in a cavity between a reflection substrate and a metallic wire-grid polarizing layer, and emits a first color light. The metallic wire-grid polarizing layer is disposed under and in contact with a transparent substrate. A phosphor layer covers over the LED chip, and is disposed in the cavity with an air gap between the phosphor layer and the metallic wire-grid polarizing layer. A second color light is generated by the first color light. The metallic wire-grid polarizing layer multiply reflects a portion of first color light in plural directions in the cavity to produce secondary excitations. The polarized white light transmits through the metallic wire-grid polarizing layer by mixing a portion of first color light with the second color light excited by the first color light.

Abstract: A semiconductor light emitting element of the present invention includes a support substrate, a semiconductor film including a light emitting layer, a surface electrode provided on the surface on a light-extraction-surface side of the semiconductor film, and a light reflecting layer. The surface electrode includes first electrode pieces that form ohmic contact with the semiconductor film and a second electrode piece electrically connected to the first electrode pieces. The light reflecting layer includes a reflecting electrode, and the reflecting electrode includes third electrode pieces that form ohmic contact with the semiconductor film and a fourth electrode piece electrically connected to the third electrode pieces and placed opposite to the second electrode piece. Both the second electrode piece and the fourth electrode piece form Schottky contact with the semiconductor film so as to form barriers to prevent forward current in the semiconductor film.

Abstract: The present invention discloses a light-emitting diode (LED) package structure, which includes a housing, a first electrode plate, a second electrode plate, a light-emitting diode, and a voltage regulation diode. The housing has a top surface forming a cavity, and the cavity contains therein a wall that divides the cavity into a light emission section and a voltage regulation section. By separately arranging the light-emitting diode and the voltage regulation diode in two different sections of the light emission section and the voltage regulation section, the present invention prevents the voltage regulation diode from affecting light flux of the light-emitting diode by absorbing light, thereby enhancing overall lighting performance of the LED package structure.

Abstract: A method for manufacturing an optoelectronic apparatus includes attaching bottom surfaces of first and second packaged optoelectronic semiconductor devices (POSDs) to a carrier substrate (e.g., a tape) so that there is a space between the first and second POSDs. An opaque molding compound is molded around portions of the first and second POSDs attached to the carrier substrate, so that peripheral surfaces of the first POSD and the second POSD are surrounded by the opaque molding compound, the space between the first and second POSDs is filled with the opaque molding compound, and the first and second POSDs are attached to one another by the opaque molding compound. The carrier substrate is thereafter removed so that electrical contacts on the bottom surfaces of the first and second POSDs are exposed. A window for each of the POSDs is formed during the molding process or thereafter.

Abstract: Enlightening device and method for making the same are disclosed. Individual light emitting devices such as LEDs are separated to form individual dies by process in which a first narrow trench cuts the light emitting portion of the device and a second trench cuts the substrate to which the light emitting portion is attached. The first trench can be less than 10 ?m. Hence, a semiconductor area that would normally be devoted to dicing streets on the wafer is substantially reduced thereby increasing the yield of devices. The devices generated by this method can also include base members that are electrically conducting as well as heat conducting in which the base member is directly bonded to the light emitting layers thereby providing improved heat conduction.

Abstract: Implementations and techniques for coupled asymmetric quantum confinement structures are generally disclosed.

Abstract: A light emitting diode includes: a light emitting diode chip including a substrate and a light emission structure disposed on the substrate; and a phosphor layer formed to cover at least one surface of a diode upper surface and a diode lower surface, when a surface formed by the light emitting diode chip, when viewed from above the light emission structure, is defined as the diode upper surface and a surface formed by the light emitting diode chip, when viewed from below the substrate is defined as the diode lower surface. The phosphor layer is formed in a manner such that the phosphor layer does not deviate from the diode upper surface or the diode lower surface and has a flat surface parallel to the diode upper surface or the diode lower surface and a curved surface connecting the flat surface to corners of the diode upper surface or the diode lower surface.

Abstract: An optical proximity sensor module includes a substrate, a light emitter mounted on a first surface of the substrate, the light emitter being operable to emit light at a first wavelength, and a light detector mounted on the first surface of the substrate, the light detector being operable to detect light at the first wavelength. The module includes an optics member disposed substantially parallel to the substrate, and a separation member disposed between the substrate and the optics member. The separation member may surround the light emitter and the light detector, and may include a wall portion that extends from the substrate to the optics member and that separates the light emitter and the light detector from one another. The separation member may be composed, for example, of a non-transparent polymer material containing a pigment, such as carbon black.

Abstract: A micro light emitting diode (LED) and a method of forming an array of micro LEDs for transfer to a receiving substrate are described. The micro LED structure may include a micro p-n diode and a metallization layer, with the metallization layer between the micro p-n diode and a bonding layer. A conformal dielectric barrier layer may span sidewalls of the micro p-n diode. The micro LED structure and micro LED array may be picked up and transferred to a receiving substrate.

Abstract: An LED package includes an electrode, an LED chip, and an insulation layer. The electrode includes a first electrode and a second electrode. The first electrode and the second electrode are separate from each other. The LED chips are connected to the first and second electrodes. The insulation layer covers the first and second electrodes and the LED chip. A cavity is defined in the first electrode for receiving the LED chip therein. A channel is defined between the first electrode and the second electrode. The channel communicates with the cavity and the insulation layer fills in the cavity and the channel.

Abstract: An improved bifacial solar cell is disclosed. In some embodiments, the front side includes an n-type field surface field, while the back side includes a p-type emitter. In other embodiments, the p-type emitter is on the front side. To maximize the diffusion of majority carriers and lower the series resistance between the contact and the substrate, the regions beneath the metal contacts are more heavily doped. Thus, regions of higher dopant concentration are created in at least one of the FSF or the emitter. These regions are created through the use of selective implants, which can be performed on one or two sides of the bifacial solar cell to improve efficiency.

Abstract: The device includes a first ceramic layer; a second ceramic layer on the first ceramic layer and having a light emitting element mounting area; a reflective layer so formed on a surface of the second ceramic layer that the reflective layer covers at least the mounting area; a protective layer which covers the reflective layer; a semiconductor light emitting element mounted on the protective layer positioned above the element mounting area; and at least one heat dissipation via passing through the first ceramic layer. The heat dissipation via is disposed in a position that does not overlap with the element mounting area in a direction in which the ceramic layers are stacked.

Abstract: An optical electronic package includes transmitting chip and a receiving chip fixed to a wafer. A transparent encapsulation structure is formed by a transparent plate and a transparent encapsulation block that are formed over the transmitter chip and at least a portion of the receiver chip, with the transparent encapsulation block embedding the transmitter chip. An opaque encapsulation block extends over the transparent plate and includes an opening that reveals a front area of the transparent plate. The front area is situated above an optical transmitter of the transmitting chip and is offset laterally relative to an optical sensor of the receiving chip.

Abstract: According to one embodiment, a semiconductor device includes the following structure. The first insulating film is formed on a first major surface of a semiconductor substrate. The electrode pad is formed in the first insulating film. The electrode pad includes a conductive film. At least a part of the conductive film includes a free region in which the conductive film is not present. The external connection terminal is formed on a second major surface facing the first major surface. The through-electrode is formed in a through-hole formed from the second major surface side of the semiconductor substrate and reaching the electrode pad. The first insulating film is present in the free region, and a step, on a through-electrode side, between the first insulating film being present in the free region and the electrode pad is not greater than a thickness of the electrode pad.

Abstract: Disclosed is an LED package. The LED package includes a package body, a first frame and a second frame on the package body and a light emitting device chip on the first frame. The first frame is separated from the second frame, and the first frame includes a bottom frame on the package body and at least two sidewall frames extending from the bottom frame and inclined with respect to the bottom frame.

Abstract: A light emitting device may be provided that includes a conductive support member; a first conductive layer disposed on the conductive support member; a second conductive layer disposed on the first conductive layer; a light emitting structure including a second semiconductor layer formed on the second conductive layer, an active layer formed on the second semiconductor layer, a first semiconductor layer formed on the active layer and an insulation layer. The first conductive layer includes at least one via penetrating the second conductive layer, the second semiconductor layer and the active layer and projecting into a certain area of the first semiconductor layer. The first semiconductor layer includes an ohmic contact layer formed on or above the conductive via. The insulation layer is formed between the first conductive layer and the second conductive layer and is formed on the side wall of the via.

Abstract: A semi-conductor light emitting device 10 in the present invention comprises an n-type ZnO substrate 3, an emission layer 2, anode 5, and cathode 4. The n-type ZnO substrate 3 has a mounting surface 31 on one of its surfaces. The emission layer 2 is composed of a p-type GaN film 24 and an n-type GaN film 22, and superimposed on the n-type ZnO substrate 3 with the p-type GaN film 24 directly disposed on the mounting surface 31 of the n-type ZnO substrate 3. The anode 5 is disposed directly on the mounting surface 31 of the n-type GaN substrate 3 in an ohmic contact therewith and in a spaced relation from the emission layer. The cathode 4 is disposed on the n-type GaN film 22 in an ohmic contact therewith. The cathode 4 and anode 5 are of the same structure solely composed of a metallic material. The semi-conductor light emitting device in the present invention assures good ohmic contact of both the cathode 4 and the anode 5, and minimizes consumption of metallic materials.

Abstract: A light-emitting diode chip (1) with a semiconductor layer sequence (2) is described, which is contacted electrically by contacts (5) via a current spreading layer (3). The contacts (5) cover around 1%-8% of the surface of the semiconductor layer sequence (2). The contacts (5) consist for example of separate contact points (51), which are arranged at the nodes of a regular grid (52) with a grid constant of 12 ?m. The current spreading layer (3) contains for example indium-tin oxide, indium-zinc oxide or zinc oxide and has a thickness in the range from 15 nm to 60 nm.

Abstract: Light emitting devices include a light emitting diode die on a mounting substrate and a conformal gel layer on the mounting substrate and/or on the light emitting diode die. The conformal gel layer may at least partially fill a gap between the light emitting diode die and the mounting substrate. A phosphor layer and/or a molded dome may be provided on the conformal gel layer. The conformal gel layer may be fabricated by spraying and/or dispensing the gel that is diluted in the solvent.

Abstract: A semiconductor light emission device is disclosed. The semiconductor light emission device includes: a substrate; a current concentration preventing pattern formed in a mesh net shape on the substrate; an n-type clad layer formed on the substrate loaded with the current concentration preventing pattern; an active layer and a p-type clad layer sequentially formed on the n-type clad layer; an n-type electrode formed on a part of the n-type clad layer which is exposed by partially etching the p-type clad layer and active layer; and a p-type electrode formed on the p-type clad layer. The current concentration preventing pattern is formed in a double layer structure which includes a first layer formed from one material of SiO and SiN and on the substrate, and a second layer formed from a metal material and on the first layer.

Abstract: A light-emitting device includes a substrate and a planarizing film above the substrate. The planarizing film has a recessed portion between non-recessed portions. A bottom electrode layer is above the non-recessed portions. A semiconductor interlayer is above the bottom electrode layer. A filling layer is above the recessed portion. The filling layer comprises a same material as the semiconductor layer and has an inner portion between outer portions. A bank is above the recessed portion of the planarizing film and edge portions of the bottom electrode layer, with each of the edge portions of the bottom electrode layer neighboring the recessed portion of the planarizing film. The filling layer inner portion has a thickness of t1, the filling layer outer portions have a thickness of t2, and t1 is greater than t2.

Abstract: A thin film transistor substrate for a liquid crystal display device includes a substrate, a metal layer on the substrate, and an aluminum complex oxide layer on the metal layer. The aluminum complex oxide layer comprises at least one selected from the group consisting of zirconium, tungsten, chromium and molybdenum. A passivation layer is formed on the aluminum complex oxide layer through a dipping process.

Abstract: A method for manufacturing an optoelectronic apparatus includes attaching bottom surfaces of first and second packaged optoelectronic semiconductor devices (POSDs) to a carrier substrate (e.g., a tape) so that there is a space between the first and second POSDs. An opaque molding compound is molded around portions of the first and second POSDs attached to the carrier substrate, so that peripheral surfaces of the first POSD and the second POSD are surrounded by the opaque molding compound, the space between the first and second POSDs is filled with the opaque molding compound, and the first and second POSDs are attached to one another by the opaque molding compound. The carrier substrate is thereafter removed so that electrical contacts on the bottom surfaces of the first and second POSDs are exposed. A window for each of the POSDs is formed during the molding process or thereafter.

Abstract: Ultraviolet light emitting illuminator, and method for fabricating same, comprises an array of ultraviolet light emitting diodes and a first and a second terminal. When an alternating current is applied across the first and second terminals and thus to each of the diodes, the illuminator emits ultraviolet light at a frequency corresponding to that of the alternating current. The illuminator includes a template with ultraviolet light emitting quantum wells, a first buffer layer with a first type of conductivity and a second buffer layer with a second type of conductivity, all deposited preferably over a strain-relieving layer. A first and second metal contact are applied to the semiconductor layers having the first and second type of conductivity, respectively, to complete the LED. The emission spectrum ranges from 190 nm to 369 nm. The illuminator may be configured in various materials, geometries, sizes and designs.

Abstract: An organic light-emitting device cutting off ambient light while keeping emission intensity includes a pair of first and second electrodes opposed to each other; and a plurality of organic semiconductor layers layered and disposed between the first and second electrodes, wherein the organic semiconductor layers include an organic light-emitting layer, the organic semiconductor device further comprising a light-scattering layer layered and disposed between the organic light-emitting layer and at least one of the first and second electrodes. The light-scattering layer includes: organic materials having carrier injection and transport characteristics of transporting electrons and/or holes; and plural particles dispersed among the organic materials so that light emitted from the organic light-emitting layer is passed therethrough.

Abstract: A light emitting diode module is produced using at least one LED and at least two selectable components that form a light mixing chamber. First and second selectable components have first and second types of wavelength converting materials with different wavelength converting characteristics. The first and second wavelength converting characteristics alter the spectral power distribution of the light produced by the LED to produce light with a color point that is a predetermined tolerance from a predetermined color point. Moreover, a set of LED modules may be produced such that each LED module has the same color point within a predetermined tolerance. The LED module may be produced by pre-measuring the wavelength converting characteristics of the different components selecting components with wavelength converting characteristics that convert the spectral power distribution of the LED to a color point that is a predetermined tolerance from a predetermined color point.

Abstract: Disclosed is a group III nitride semiconductor light-emitting device which suppresses electric current concentration in a light-transmitting electrode and a semiconductor layer directly below an electrode to enhance light emission efficiency, suppresses light absorption in the electrode or light loss due to multiple reflection therein to enhance light extraction efficiency, and has superior external quantum efficiency and electric characteristics. A semiconductor layer (20), in which an n-type semiconductor layer (4), a light-emitting layer (5) and a p-type semiconductor layer (6) are sequentially layered, is formed on a single-crystal underlayer (3) which is formed on a substrate (11). A light-transmitting electrode (7) is formed on the p-type semiconductor layer (6). An insulation layer (15) is formed on at least a part of the p-type semiconductor layer (6), and the light-transmitting electrode (7) is formed to cover the insulation layer (15).

Abstract: Side-mountable semiconductor light emitting device packages include an electrically insulating substrate having a front face and a back face and a side face extending therebetween. The side face is configured for mounting on an underlying surface. An electrically conductive contact is provided proximate an edge of the substrate on the back face of the substrate and/or on a recessed region on the side face of the substrate. The contact is positioned to be positioned proximate an electrical connection region of the underlying surface when the semiconductor light emitting device package is side mounted on the underlying surface. A conductive trace extends along the front face of the substrate and is electrically connected to the contact. A semiconductor light emitting device is mounted on the front face of the substrate and electrically connected to the conductive trace.

Abstract: Although an organic resin substrate is highly effective at reducing the weight and improving the shock resistance of a display device, it is required to improve the moisture resistance of the organic resin substrate for the sake of maintaining the reliability of an EL element. Hard carbon films are formed to cover a surface of the organic resin substrate and outer surfaces of a sealing member. Typically, DLC (Diamond like Carbon) films are used as the carbon films. The DLC films have a construction where carbon atoms are bonded into an SP3 bond in terms of a short-distance order, although the films have an amorphous construction from a macroscopic viewpoint. The DLC films contain 95 to 70 atomic % carbon and 5 to 30 atomic % hydrogen, so that the DLC films are very hard and minute and have a superior gas barrier property and insulation performance.

Abstract: Certain example embodiments of this invention relate to techniques for improving the performance of Lambertian and non-Lambertian light sources. In certain example embodiments, this is accomplished by (1) providing an organic-inorganic hybrid material on LEDs (which in certain example embodiments may be a high index of refraction material), (2) enhancing the light scattering ability of the LEDs (e.g., by fractal embossing, patterning, or the like, and/or by providing randomly dispersed elements thereon), and/or (3) improving performance through advanced cooling techniques. In certain example instances, performance enhancements may include, for example, better color production (e.g., in terms of a high CRI), better light production (e.g., in terms of lumens and non-Lambertian lighting), higher internal and/or external efficiency, etc.

Abstract: Various embodiments of methods and devices are provided for an optocoupler comprising an optically reflective compound comprising silicone and inner and outer surfaces. A molding compound surrounds and encapsulates at least portions of the outer surfaces of the optically reflective compound to form an enclosure. A surface functional coating layer is provided in the optically reflective compound to promote adhesion and increase breakdown voltages between inner walls of the enclosure and the outer surfaces of the optically reflective compound.

Abstract: The present invention provides a structure in which a pixel region 13 is surrounded by a first sealing material (having higher viscosity than a second sealing material) 16 including a spacer (filler, minute particles and/or the like) which maintains a gap between the two substrates, filled with a few drops of the transparent second sealing material 17a which is spread in the region; and sealed by using the first sealing material 16 and the second sealing material 17.

Abstract: An optoelectronic component includes a semiconductor body and a carrier substrate connected to the semiconductor body with a solder joint, wherein the carrier substrate includes first and second apertures, through which first and second electrically conductive connecting layers are guided from a first primary surface of the carrier substrate facing away from the semiconductor body to a second primary surface of the carrier substrate facing away from the semiconductor body, the carrier substrate made of a semiconductor material and having side flanks, which run obliquely to the primary surfaces at least in a first partial region, wherein the side flanks are provided with an electrically insulating layer in the first partial region.

Abstract: The present invention provides a display device using a copper wiring and having high display properties in which without preventing a higher aperture ratio of the pixel, coloring of a screen due to reflected light of external light produced within the display device can be prevented. The display device according to the present invention is a display device including a plurality of pixel regions, wherein each of the pixel regions includes a copper wiring containing copper or an alloy thereof, and a red-colored layer and a colored layer of another color; and an area of the copper wiring is smaller in the pixel region including the red-colored layer than in the pixel region including the colored layer of another color, the area of the copper wiring reflecting incident light entering from the display surface side of the display device.

Abstract: A light emitting diode package comprises a light emitting diode chip, a first luminescent conversion layer and a separate second luminescent conversion layer on the first luminescent conversion layer. The first luminescent conversion layer has a first luminescent conversion element surrounding the light emitting diode chip. The second luminescent conversion layer has a second luminescent conversion element located above the light emitting diode chip. An excitation efficiency of the first luminescent conversion element is higher than that of the second luminescent conversion element.

Abstract: To provide a light emitting device easy to produce and extracting light to its outside with high efficiency, the light-emitting device 70 of the present invention includes an insulating base 10; a light-emitting element 1 mounted on a side of the base 10; and a protection element 2 mounted on the side and protecting the light-emitting element 1. The element 2 is covered with a light-reflecting filler-containing resin 5, which is prepared by causing a flexible silicone resin to contain, before being cured, light-reflecting or light-scattering fillers 5a having a particle diameter larger than the wavelength of light emitted by the element 1. This causes light emitted from the element 1 to be reflected by the resin 5, instead of being absorbed by the element 2, so that such light is released to the outside of the light-emitting device 70. This allows the device 70 to extract light to the outside with high efficiency, and also allows for easy formation of the resin 5 having a desired pattern and position.