Abstract: The application relates to a semiconductor component, a photo-reflective sensor, and also a method for producing a housing for a photo-reflective sensor, wherein the housing lower part is monolithic and has at least two cavities into which an emitter and a detector are introduced.

Abstract: A package has a base substrate that is a metal plate electrically connected to one electrode of a UV-ray light emitting diode and a cover substrate that is a metal plate electrically connected to the other electrode and that is stacked on the base substrate. A plurality of packages are mounted on a header such that center lines of the base substrates extending in their widthwise directions are aligned to each other. The cover substrates are arranged asymmetrical with respect to the longitudinal center line of the base substrates so as to traverse the center line. When mounted on the header, the packages are arranged such that positions of the cover substrates are staggered with respect to the center line. Moreover, the base substrate of one of the adjacent packages and the cover substrate of the other adjacent package are connected together by a connection plate fastened to the base substrates and the cover substrate by connection screws.

Abstract: The present invention provides an ID chip or an IC card in which the mechanical strength of an integrated circuit can be enhanced without suppressing a circuit scale. An ID chip or an IC card of the present invention has an integrated circuit in which a TFT (a thin film transistor) is formed from an insulated thin semiconductor film. Further, an ID chip or an IC card of the present invention has a light-emitting element and a light-receiving element each using a non-single-crystal thin film for a layer conducting photoelectric conversion. Such a light-emitting element or a light-receiving element may be formed consecutively to (integrally with) an integrated circuit or may be formed separately and attached to an integrated circuit.

Abstract: A multi-chip light emitting device (LED) uses a low-cost carrier structure that facilitates the use of substrates that are optimized to support the devices that require a substrate. Depending upon the type of LED elements used, some of the LED elements may be mounted on the carrier structure, rather than on the more expensive ceramic substrate. In like manner, other devices, such as sensors and control elements, may be mounted on the carrier structure as well. Because the carrier and substrate structures are formed independent of the encapsulation and other after-formation processes, these structures can be tested prior to encapsulation, thereby avoiding the cost of these processes being applied to inoperative structures.

Abstract: Provided is a lightweight flexible lighting device with excellent durability and stable performance over repeated use that combines an organic electroluminescent element, an organic photoelectric conversion element, and a secondary cell. The lighting device has a control means for controlling the electrical connections of the organic electroluminescent element, the organic photoelectric conversion element, and the secondary cell. The control means controls the electrical connections such that a reverse bias voltage is applied to the organic electroluminescent element when the organic electroluminescent element receives light, generates power, and charges the secondary cell, and such that a reverse bias voltage is applied to the organic photoelectric conversion element when the organic electroluminescent element is supplied with power from the secondary cell and emits light.

Abstract: A system is provided for determining a color using a CMOS image sensor. The system includes an input port for receiving a user command. The system further includes an image sensor, an optical device that forms an image on the image sensor, and a processor. The image sensor includes an n-type substrate and a p-type epitaxy layer overlying the n-type substrate. The image sensor includes a control circuit that applies a first voltage on the n-type substrate to obtain a first output. The control circuit applies a second voltage on the n-type substrate to obtain a second output. The control circuit also applies a third voltage on the n-type substrate to obtain a third output. The p-type epitaxy layer includes a silicon germanium material. The image sensor additionally includes an epitaxy layer interposed between the n-type substrate and the p-type epitaxy layer.

Abstract: Semiconductor devices in which one or more LEDs are formed include a dielectric region formed on a n/p region of the semiconductor, and that a metallic electrode can be formed on (at least partially on) the region of dielectric material. A transparent layer of a material such as Indium Tin Oxide can be used to make ohmic contact between the semiconductor and the metallic electrode, as the metallic electrode is separated from physical contact with the semiconductor by one or more of the dielectric material and the transparent ohmic contact layer (e.g., ITO layer). The dielectric material can enhance total internal reflection of light and reduce an amount of light that is absorbed by the metallic electrode.

Abstract: A functional block for assembly includes at least one element and a patterned magnetic film comprising at least one magnetic region attached to the element. A wafer includes a host substrate comprising a number of elements. The wafer further includes a patterned magnetic film attached to the elements and comprising a number of magnetic regions. The magnetic regions are attached to respective ones of the elements. A method of manufacture includes forming a number of magnetic regions on a host substrate having an array of elements. The forming step provides at least one of the magnetic regions for a respective group comprising at least one of the elements.

Abstract: While suppressing the frequency of a signal line driver circuit, a blur of a moving image of a light-emitting device using a light-emitting transistor can be prevented, without reducing a frame frequency. A switching element is provided in a path of a current which flows between a source and a drain of a light-emitting transistor, and the light-emitting transistor is made not to emit light by turning off the switching element, whereby pseudo-impulse driving is performed. Switching of the switching element can be controlled by a scan line driver circuit. In a specific structural example, the light-emitting device includes, in a pixel, a light-emitting transistor, a first switching element which controls supply of a potential of a video signal to a gate of the light-emitting transistor, and a second switching element which controls a current which flows between a source and a drain of the light-emitting transistor.

Abstract: Methods of forming integrated circuit packages having an LED molded into the package, and the integrated circuit package formed thereby. An integrated circuit including one or more semiconductor die, passive components and an LED may be assembled on a panel. The one or more semiconductor die, passive components and LED may all then be encapsulated in a molding compound, and the integrated circuits then singularized to form individual integrated circuit packages. The integrated circuits are cut from the panel so that a portion of the lens of the LED is severed during the singularization process, and an end of the lens remaining within the package lies flush with an edge of the package to emit light outside of the package.

Abstract: In one aspect, the present invention relates to a display. In one embodiment, the display has a substrate, and a plurality of pixels formed on the substrate and arranged in an array. Each pixel includes a driving transistor and a read-out transistor spatially formed on the substrate, where each transistor has a gate electrode, a drain electrode and a source electrode, an organic light emitting diode (OLED) having a cathode layer, a anode layer and an emissive layer formed between the cathode layer and the anode layer, and formed over the driving transistor and the read-out transistor such that the anode layer of the OLED is electrically connected to the source electrode of the driving transistor, and a photo sensor having a photosensitive layer formed between the anode layer of the OLED and the source electrode of the read-out transistor.

Abstract: There is provided an electric device which can prevent a deterioration in a frequency characteristic due to a large electric power external switch connected to an opposite electrode and can prevent a decrease in the number of gradations. The electric device includes a plurality of source signal lines, a plurality of gate signal lines, a plurality of power source supply lines, a plurality of power source control lines, and a plurality of pixels. Each of the plurality of pixels includes a switching TFT, an EL driving TFT, a power source controlling TFT, and an EL element, and the power source controlling TFT controls a potential difference between a cathode and an anode of the EL element.

Abstract: An illumination apparatus includes a plurality of light emitting diode devices mounted therein and the light emitting diode device includes a substrate, a light emission area having a light emitting layer and a clad layer formed by growing crystal on the substrate, a negative polarity and a positive polarity. The light emission area has 6 or more opposite corners, which are disposed symmetrically to the middle of the light emitting diode device.

Abstract: Disclosed are a compound for an organic electroluminescent device (organic EL device) which is improved in luminous efficiency, fully secured of driving stability, and of simple constitution and an organic EL device using said compound. The compound for an organic EL device has two indolocarbazole skeletons each of which is bonded to an aromatic group or two skeletons similar thereto. The organic EL device comprises a light-emitting layer disposed between an anode and a cathode piled one upon another on a substrate and said light-emitting layer comprises a phosphorescent dopant and the aforementioned compound for an organic EL device as a host material.

Abstract: A novel semiconductor device includes a plurality of light emitting diodes, a plurality of transistors, a source pad, and a plurality of wires. The plurality of transistors drive the plurality of light emitting diodes. The source pad is connected to sources of the plurality of transistors and supplies an electric current to each of the plurality of transistors. The plurality of wires connect the source pad and the sources of the plurality of transistors. The plurality of wires also provide substantially equal resistance to the electric current passing therethrough.

Abstract: A display apparatus includes a substrate; a display area including a plurality of pixels provided on the substrate; a switching element provided for each of the pixels, the switching element including a first semiconductor layer formed of a first organic semiconductor; and a humidity sensor provided on the substrate and outside the display area. The humidity sensor includes, as a humidity sensitive layer, a second semiconductor layer formed of a second organic semiconductor having a correlation in terms of electric characteristics with the first organic semiconductor.

Abstract: Disclosed are an organic electroluminescent device (organic EL device) which is improved in luminous efficiency, fully secured of driving stability, and of simple constitution and a compound useful for the fabrication of said organic EL device. The compound for the organic EL device has an indolocarbazole structure or a structure similar thereto in the molecule wherein an aromatic group is bonded to the nitrogen atom in the indolocarbazole. The organic EL device has a light-emitting layer disposed between an anode and a cathode piled one upon another on a substrate and said light-emitting layer comprises a phosphorescent dopant and the aforementioned compound for an organic electroluminescent device as a host material.

Abstract: A light emitting apparatus includes a light emitting element formed on a surface of a substrate and a light receiving element formed on an area other than an area overlapping the light emitting element on the surface of the substrate, the light receiving element detecting light emitted from the light emitting element.

Abstract: A display includes: a substrate having a pixel region and a sensor region in which photo-sensor parts are formed; an illuminating section operative to illuminate the substrate from one surface side of the substrate; a thin film photodiode disposed in the sensor region, having at least a P-type semiconductor region and an N-type semiconductor region, and operative to receive light incident from the other surface side of the substrate; and a metallic film formed on the one surface side of the substrate so as to face the thin film photodiode through an insulator film, operative to restrain light generated from the illuminating section from being directly incident on the thin film photodiode from the one surface side, and fixed to a predetermined potential, wherein in the thin film photodiode, the width of the P-type semiconductor region and the width of the N-type semiconductor region are different from each other.

Abstract: Provided is an optical device with improved phase shift and propagation loss of light without decreasing the dynamic characteristics of the optical device. The optical device includes a first semiconductor layer which is doped with a first type of conductive impurities and has a uniform thickness; a gate insulating layer which has a shape and is formed on a portion of the first semiconductor layer and has a thin center portion; and a second semiconductor layer which covers an upper surface of the gate insulating layer and is doped with a second type of conductive impurities opposite to the first type of conductive type impurities.

Abstract: The present invention discloses an LED module comprising: a waterproof enclosure; an LED accommodated in the waterproof enclosure; a wire for coupling the LED module with other LED modules and a driver; and a radiating unit set in the bottom of the waterproof enclosure and exposed to the external environment. The invention further provides an LED chain comprising the above said LED module and a driver coupled with the LED module. The LED chain according to the invention may have a high waterproof level, for example, IP65. The heat generated during the operation of the high power LED module may be transmitted to the external environment in time via a heat sink set on the LED module, thereby effective thermal management for the LED module and a long service life of the LED module may be obtained. Moreover, the finish surface of the driver may be made handsome by encapsulating the driver through the low pressure molding.

Abstract: A vehicle has a display device which widens the field of view (visible area) reflected by a side mirror or a back mirror mounted on the vehicle. To enable a driver driving the vehicle to confirm safety even when it is difficult for the driver to visually recognize some of objects surrounding the vehicle, a liquid crystal display device or an EL display device is provided in the side mirror (door mirror), the back mirror (room mirror) or in an interior portion of the vehicle. A camera is mounted on the vehicle and an image from the camera is displayed on the display device. Further, information read from a sensor (distance measuring sensor) having the function of measuring the distance to another vehicle, and a sensor (impact sensor) having the function of sensing an externally applied impact force larger than a predetermined value is displayed on the display device.

Abstract: The invention includes a single chip having multiple different devices integrated thereon for a common purpose. The chip includes a substrate having a peripheral area, a mid-chip area, and a central area. A plurality of FETs are formed in the peripheral area with each FET having a layer of single crystal rare earth material in at least one of a conductive channel, a gate insulator, or a gate stack. A plurality of photonic devices including light emitting diodes or vertical cavity surface emitting lasers are formed in the mid-chip area with each photonic device having an active layer of single crystal rare earth material. A plurality of photo detectors are formed in the central area.

Abstract: This invention details how a low cost opto coupler can be made on Silicon On Insulator (SOI) using conventional integrated circuit processing methods. Specifically, metal and deposited insulating materials are use to realize a top reflector for directing light generated by a silicon PN junction diode to a silicon PN junction photo diode detector. The light generator or LED can be operated either in the avalanche mode or in the forward mode. Also, side reflectors are described as a means to contain the light to the LED-photo detector pair. Furthermore, a serpentine junction PN silicon LED is described for the avalanche mode of the silicon LED. For the forward mode, two LED structures are described in which hole and electrons combine in lightly doped regions away from heavily doped regions thereby increasing the LED conversion efficiency.

Abstract: An optical transmission board includes a base having light transmissibility, and an amorphized part provided in a lens-like shape in the base, the lens-like shape part having a different refractive index from the rest of the base.

Abstract: Example embodiments may include a light emitting device package. The light emitting device package may include a light emitting device, a package body-including a cavity having a bottom surface on which the light emitting device is mounted and a side surface for reflecting light emitted from the light emitting device, a first electrode protruding from the package body, and a second electrode coupled with the package body. The first and second electrodes may be designed to couple respectively with the second and first electrodes of another light emitting device package, thereby forming an array of light emitting device packages.

Abstract: A semiconductor device includes a photodiode, a first transistor, and a second transistor. The photodiode has a function of supplying a charge corresponding to incident light to a gate of the first transistor, the first transistor has a function of accumulating the charge supplied to the gate, and the second transistor has a function of retaining the charge accumulated in the gate of the first transistor. The second transistor includes an oxide semiconductor.

Abstract: The invention relates to a photo-detector comprising a light sensitive element (101) and a wavelength converter (103) arranged in front of the light sensitive element, the wavelength converter being configured to convert light of a first wavelength into light of a second wavelength and to direct the light of the second wavelength to the light sensitive element. The advantage is that a stable reading across the entire visible spectrum may be provided.

Abstract: By introducing new concepts into a structure of a conventional organic semiconductor element and without using a conventional ultra thin film, an organic semiconductor element is provided which is more reliable and has higher yield. Further, efficiency is improved particularly in a photoelectronic device using an organic semiconductor. Between an anode and a cathode, there is provided an organic structure including alternately laminated organic thin film layer (functional organic thin film layer) realizing various functions by making an SCLC flow, and a conductive thin film layer (ohmic conductive thin film layer) imbued with a dark conductivity by doping it with an acceptor and a donor, or by the like method.

Abstract: A monolithic light-emitting device and driving method therefore includes a plurality of light-emitting diodes, array-arranged monolithically on a single substrate. The light-emitting diodes include a pn junction-containing semiconductor material and a phosphor-containing layer passing light emitted from the semiconductor material, absorbing part, or whole of the light for conversion into light having a different wavelength. The array is constituted of a light-emitting diode group consisting of m (m?2) pieces of the light-emitting diode, the light emitting diode group being constituted of N types (N?2, providing N?m) of light-emitting diodes, each having either one of preset N types of light-emitting spectrum patterns. An average light-emitting spectrum from the whole array can be changed by regulating a power supplied to the light-emitting diodes for each light-emitting diode group sorted according to the type of the light-emitting spectrum pattern.

Abstract: A multispectral pixel structure is provided that includes a plurality of stacked cavity arrangements for emitting or detecting a plurality of specified wavelengths, wherein each stacked cavity arrangement having a photoactive layer for spectral emission or detection of one of the specified wavelengths. The photoactive layer is positioned within a resonant cavity stack and the resonant cavity stack being positioned between two adjacent mirror stacks. A plurality of coupling-matching layers are positioned between one or more of the stack mirror arrangements for controlling optical phase and coupling strength between emitted or incident light and resonant modes in each of the stacked cavity arrangements.

Abstract: A pixel structure includes a substrate, a first and a second patterned conductive layers, and a pixel electrode. The first patterned conductive layer, disposed on the substrate, includes at least one scan line, at least one gate, and at least one common electrode line. The second patterned conductive layer, disposed on the first patterned conductive layer, includes at least one data line, at least one source/drain, and at least one first patterned layer partly disposed on the common electrode line. The pixel electrode, disposed on the second patterned conductive layer, includes at least one first part and one second part. The first part partly covers the first patterned layer and the common electrode line. The second part, connected to the source/drain, covers the other part of the first patterned layer. The first and second patterned layers compose at least one first capacitance.

Abstract: A radiation-emitting thin film semiconductor chip is herein described which comprises a first region with a first active zone, a second region, separated laterally from the first region by a space, with a second active zone which extends parallel to the first active zone in a different plane, and a compensating layer, which is located in the second region at the level of the first active zone, the compensating layer not containing any semiconductor material.

Abstract: A semiconductor device including a wafer-level LED includes a semiconductor structure coupled to first and second electrodes. The semiconductor includes a P-doped portion of a first layer to an N-doped portion of a second layer. The first layer includes a surface configured to emit light. The first electrode is electrically coupled to the P-doped portion of the first layer on a first side of the semiconductor structure. The first side is adjacent to the surface that is configured to emit the light. The second electrode is electrically coupled to the N-doped portion of the second layer on a second side of the semiconductor structure. The second side is also adjacent to the surface that configured to emit light.

Abstract: A method includes placing a first bonding layer on at least one of a first functional region bonded on a release layer with a light releasable adhesive layer on a first substrate, and a transfer region on a second substrate; bonding the first functional region to the second substrate by the first bonding layer; irradiating the release layer with light with a light blocking member being provided to separate the first substrate from the first functional region at the release layer; placing a second bonding layer on at least one of a second functional region on the first substrate, and a transfer region on the release layer or a transfer region on a third substrate; bonding the second functional region to the second substrate or the third substrate by the second bonding layer; and separating the first substrate from the second functional region at the release layer.

Abstract: Light converting constructions are disclosed. The light converting construction includes a phosphor slab that has a first index of refraction for converting at least a portion of light at a first wavelength to light at a longer second wavelength; and a structured layer that is disposed on the phosphor slab and has a second index of refraction that is smaller than the first index of refraction. The structured layer includes a plurality of structures that are disposed directly on the phosphor slab and a plurality of openings that expose the phosphor slab. The light converting construction further includes a structured overcoat that is disposed directly on at least a portion of the structured layer and a portion of the phosphor slab in the plurality of openings. The structured overcoat has a third index of refraction that is greater than the second index of refraction.

Abstract: A semiconductor light-emitting device includes: a light-emitting semiconductor element arranged on a lead frame; a transparent resin mold covering the light-emitting semiconductor element and the lead frame except a terminal portion of the lead frame; and a reflective surface formed on a bent portion of part of the lead frame. The terminal portion of the lead frame has a terminal structure, which can serve as a combination of a top-view type and a side-view type.

Abstract: A single chip wireless sensor comprises a microcontroller connected by a transmit/receive interface to a wireless antenna. The microcontroller is also connected to an 8 kB RAM, a USB interface, an RS232 interface, 64 kB flash memory, and a 32 kHz crystal. The device senses humidity and temperature, and a humidity sensor is connected by an 18 bit ?? A-to-D converter to the microcontroller and a temperature sensor is connected by a 12 bit SAR A-to-D converter to the microcontroller. The device is an integrated chip manufactured in a single process in which both the electronics and sensor components are manufactured using standard CMOS processing techniques, applied to achieve both electronic and sensing components in an integrated process.

Abstract: A light emitting device having a vertical structure, a package thereof and a method for manufacturing the same, which are capable of damping impact generated in a substrate separation process, and achieving an improvement in mass productivity, are disclosed. The method includes growing a semiconductor layer having a multilayer structure over a substrate, forming a first electrode on the semiconductor layer, separating the substrate including the grown semiconductor layer into unit devices, bonding each of the separated unit devices on a sub-mount, separating the substrate from the semiconductor layer, and forming a second electrode on a surface of the semiconductor layer exposed in accordance with the separation of the substrate.

Abstract: In a semiconductor device, optical signal transfer capabilities are implemented on the basis of silicon-based monolithic opto-electronic components in combination with an appropriate waveguide. Thus, in complex circuitries, such as microprocessors and the like, superior performance may be obtained in terms of signal propagation delay, while at the same time thermal requirements may be less critical.

Abstract: Optical analysis system fluidically self-assembled using shape-coded freestanding optoelectronic components and a template having shape-coded recessed binding sites connected by an embedded interconnect network. Also includes methods of manufacture and use for optical analyses.

Abstract: An optical module can reliably provide monitor light and can facilitate manufacturing by reducing the number of lens surfaces. Based on a surface shape of each first lens surface (14), the relationship in length between the optical path length of the second optical path and the optical path length of the first optical path after reflecting/transmission surface (17) and whether or not second lens surfaces are formed in second surface (4b) based on this relationship in length, the spot diameter of light of each light emitting element (7) to be coupled to the end surface of each optical fiber (3) is made narrower than a spot diameter of monitor light to be coupled to each light receiving element (8).

Abstract: Overmolded lenses and certain fabrication techniques are described for LED structures. In one embodiment, thin YAG phosphor plates are formed and affixed over blue LEDs mounted on a submount wafer. A clear lens is then molded over each LED structure during a single molding process. The LEDs are then separated from the wafer. The molded lens may include red phosphor to generate a warmer white light. In another embodiment, the phosphor plates are first temporarily mounted on a backplate, and a lens containing a red phosphor is molded over the phosphor plates. The plates with overmolded lenses are removed from the backplate and affixed to the top of an energizing LED. A clear lens is then molded over each LED structure. The shape of the molded phosphor-loaded lenses may be designed to improve the color vs. angle uniformity. Multiple dies may be encapsulated by a single lens. In another embodiment, a prefabricated collimating lens is glued to the flat top of an overmolded lens.

Abstract: Light emitting chips, light emitting unit cells and methods of forming light emitting chips are provided. A light emitting chip includes a light emission structure having a p-type semiconductor layer, an n-type semiconductor layer, and an active layer therebetween. At least one light emitting unit is formed from the light emission structure including a light emitting diode (LED) and a plurality of light receiving diode (LRD) portions. The LRD portions are serially connected and configured to surround the LED portion. The LRD portions are optically coupled to the LED portion to receive total internal reflection (TIR) light from the LED portion and convert the TIR light to a photocurrent.

Abstract: A display substrate includes a gate wire, a data wire which crosses the gate wire, a display part, a dummy pixel part and a test part. The display part includes a pixel element electrically connected to the gate wire and the data wire, and the pixel element includes a display element. The dummy pixel part surrounds the display part to protect the pixel element from static electricity. The test part is formed adjacent to the display part and includes a test element having a test display element formed in a substantially same manner as the display element.

Abstract: The invention of this application is a field-effect transistor type light-emitting device having an electron injection electrode, i.e. a source electrode, a hole injection electrode, i.e. a drain electrode, an emission active member disposed between the source electrode and the drain electrode so as to contact with both electrodes, and a field application electrode, i.e. a gate electrode, for inducing electrons and holes in the emission active member, which is disposed in the vicinity of the emission active member via an electrically insulating member or an insulation gap. The emission active member is made of an inorganic semiconductor material having both an electron transporting property and a hole transporting property.

Abstract: One embodiment of the present invention includes a first light-blocking layer and a second light-blocking layer which are over a light-transmitting substrate, a first photodiode over the first light-blocking layer, a second photodiode over the second light-blocking layer, a first color filter covering the first photodiode, a second color filter covering the second photodiode, and a third light-blocking layer formed using the first color filter and the second color filter and disposed between the first photodiode and the second photodiode.

Abstract: Provided is an optical interconnection device. The optical interconnection device include: a first semiconductor chip disposed on a germanium-on-insulator (GOI) substrate; a light emitter on the GOI substrate, the light emitter receiving an electrical signal from the first semiconductor chip and outputting a light signal; a light detector on the GOI substrate, the light detector sensing the light signal and converting the sensed light signal into an electrical signal; and a second semiconductor chip on the GOI substrate, the second semiconductor chip receiving the electrical signal from the light detector.

Abstract: A light detecting chip includes at least one detection region configured to accommodate a sample that is capable of emitting fluorescent light, and a light reflecting section configured to reflect at least a portion of the fluorescent light emitted from the sample in a direction toward a light detector.

Abstract: An image display unit and a method of producing the image display unit, wherein the image display unit includes an array of a plurality of light emitting devices for displaying an image, and wherein the method of producing the image display unit employs, for example, a space expanding transfer, whereby a first transfer step includes transferring the devices arrayed on a first substrate to a temporary holding member such that the devices are spaced from each other with a pitch larger than a pitch of the devices arrayed on the first substrate, a second holding step includes holding the devices on the temporary holding member, and a third transfer step includes transferring the devices held on the temporary holding member onto a second board such that the devices are spaced from each other with a pitch larger than the pitch of the devices held on the temporary holding member.