Abstract: A semiconductor DC transformer is provided. The semiconductor DC transformer comprises: a plurality of semiconductor electricity-to-light conversion structures connected in series for converting input electric energy into optical energy; and a plurality of semiconductor light-to-electricity conversion structures connected in series for converting input optical energy into electric energy, in which a number of the semiconductor electricity-to-light conversion structures is different from that of the semiconductor light-to-electricity conversion structures so as to realize a DC transformation, and a working light spectrum of the semiconductor electricity-to-light conversion structures is matched with that of the semiconductor light-to-electricity conversion structures.

Abstract: Provided is an optical modulator having pixelization patterns. The optical modulator includes an optical-electric (O-E) conversion element converting input optical images to current signals using the photoelectric effect, and an electric-optical (E-O) conversion element that emits light using the current signals transferred from the O-E conversion element. Trenches are formed from at least a surface of the optical modulator to a predetermined depth in the optical modulator so as to block or reduce electrical interference between pixels when the electric signals are transferred from the O-E conversion element to the E-O conversion element.

Abstract: Objects are to provide a small imaging device that can take an image of a thick book without distortion of an image of a gutter and to improve the portability of an imaging device by downsizing the imaging device. The imaging device has imaging planes on both surfaces. All elements included in the imaging device are preferably provided over one substrate. In other words, the imaging device has a first imaging plane and a second imaging plane facing opposite to the first imaging plane.

Abstract: A method for fabricating an integrated AC LED module comprises steps: forming a junction layer on a substrate, and defining a first growth area and a second growth area on the junction layer; respectively growing a Schottky diode and a LED on the first growth area and the second growth area; forming a passivation layer and a metallic layer on the Schottky diode, the LED and the substrate. Thereby, the Schottky diode is electrically connected with the LED via the metallic layer. Thus is promoted the reliability of electric connection of diodes, reduced the layout area of the module, and decreased the fabrication cost.

Abstract: A main object of the present invention is to provide a static induction light emitting transistor having an organic EL element structure and a vertical FET structure which is possible to avoid a problem of the shielding of light and a problem of shielding of electric field by a gate electrode. The above object is achieved by providing a light emitting transistor 11 of a vertical FET structure comprising: on a substrate 12; a source electrode 13; a hole transporting layer 14 in which a slit-shaped gate electrode 15 is embedded; an equipotential layer 16; light emitting layer 17; and a transparent or semitransparent drain electrode 18, provided in this order. In this light emitting transistor, the drain electrode 18 provided on the opposite side of the gate electrode 15, viewing from the light emitting layer 17, is transparent or semitransparent. Therefore, light generated in the light emitting layer 17 can be taken out from the drain electrode side.

Abstract: Exemplary embodiments of the described technology relate generally to display devices including dye-sensitized solar cells. The display device according to an exemplary embodiment includes a display element for displaying an image, and a dye-sensitized solar cell for converting light into electricity to offset the power consumption of the display element. The dye-sensitized solar cell includes a selective photo-absorption material for selectively absorbing light from at least one wavelength band.

Abstract: A light emitting device includes: a light emitting unit and a light receiving unit which are provided on a same substrate, wherein the light emitting unit includes an active layer sandwiched between a first clad layer and a second clad layer, a first electrode electrically connected to the first clad layer, and a second electrode electrically connected to the second clad layer.

Abstract: A method of fabricating a light emitting diode array, comprising: providing a temporary substrate; forming a first light emitting stack and a second light emitting stack on the temporary substrate; forming a first insulating layer covering partial of the first light emitting stack; forming a wire on the first insulating layer and electrically connecting to the first light emitting stack and the second light emitting stack; forming a second insulating layer fully covering the first light emitting stack, the wire and partial of the second light emitting stack; forming a metal connecting layer on the second insulating layer and electrically connecting to the second light emitting stack; forming a conductive substrate on the metal connecting layer; removing the temporary substrate; and forming a first electrode connecting to the first light emitting stack.

Abstract: A semiconductor composite apparatus, includes a first substrate, a semiconductor thin film layer, active devices, first driving circuits, and second driving circuits. The semiconductor thin film layer is formed on the first substrate and is formed of a first semiconductor material. The active devices are formed in the semiconductor thin film layer. The first driving circuits is formed of a second semiconductor material and performing a first function in which the active devices are driven. The second driving circuits are formed of a third semiconductor material and performing a second function in which the active devices are driven, the second function being different from the first function.

Abstract: Disclosed is a display device that has a light detecting element (D1) disposed in a pixel region (1), an opening (a through hole) (19a) formed in an insulating film (19) that is disposed above the light detecting element (D1), and a transparent electrode (20) formed in the opening (19a), and that can reduce occurrence of leakage between the transparent electrode (20) and other wiring line (SL). Specifically disclosed is a display device that has an active matrix substrate (100) in which a first wiring line (SL) and a second wiring line (GL) are formed so as to cross each other, and a light detecting element (D1) disposed on a pixel region (1) in the active matrix substrate (100).

Abstract: Apparatuses and systems for photon detection can include a first optical sensing structure structured to absorb light at a first optical wavelength; and a second optical sensing structure engaged with the first optical sensing structure to allow optical communication between the first and the second optical sensing structures. The second optical sensing structure can be structured to absorb light at a second optical wavelength longer than the first optical wavelength and to emit light at the first optical wavelength which is absorbed by the first optical sensing structure. Apparatuses and systems can include a bandgap grading region.

Abstract: Provided are apparatus and methods corresponding to a solid state light emitting element. Such methods include mounting, to a thermally conductive component, a solid state light emitting element that includes first and second electrical connection points that are configured to be conductively engaged on a first side of a circuit structure. The solid state light emitting element is electrically insulated from the thermally conductive component to provide that electrical connections are arranged on the first side of the circuit structure and heat is conducted to a second side of the circuit structure that is opposite the first side of the circuit structure.

Abstract: An organic light emitting diode display includes a substrate main body, a polysilicon semiconductor layer on the substrate main body, a gate insulating layer covering the semiconductor layer, and a gate electrode and a pixel electrode on the gate insulating layer, the gate electrode and the pixel electrode each including a transparent conductive layer portion with a gate metal layer portion on the transparent conductive layer portion, and the pixel electrode including a light emitting area having the transparent conductive layer portion and a non-light emitting area having both the transparent conductive layer portion and the gate metal layer portion.

Abstract: The present invention relates to a light-emitting diode die package having an LED die and an accommodating housing. The LED die has a first doped layer doped with a p- or n-type dopant and a second doped layer doped with a different dopant from that doped in the first doped layer. Each of the first and second doped layers has an electrode-forming surface formed with an electrode, on which an insulation layer is formed. The insulation layer is formed with exposure holes for exposing the electrodes corresponding thereto. Each of the exposure holes is formed inside with an electrically conductive linker. The accommodating housing has an open end through which an accommodating space is accessible. The LED die is positioned within the accommodating space in such a manner that the electrically conductive linker protrudes outwardly from the accommodating space.

Abstract: The present invention relates to a light-emitting diode die package having an LED die and an accommodating housing. The LED die has a first doped layer doped with a p- or n-type dopant and a second doped layer doped with a different dopant from that doped in the first doped layer. Each of the first and second doped layers has an electrode-forming surface formed with an electrode, on which an insulation layer is formed. The insulation layer is formed with exposure holes for exposing the electrodes corresponding thereto. Each of the exposure holes is formed inside with an electrically conductive linker. The accommodating housing has an open end through which an accommodating space is accessible. The LED die is positioned within the accommodating space in such a manner that the electrically conductive linker protrudes outwardly from the accommodating space.

Abstract: A semiconductor device includes one or more unipolar compound semiconductor element; and bypass semiconductor elements externally connected to the respective compound semiconductor elements in parallel. A turn-on voltage of the bypass semiconductor elements is smaller than a turn-on voltage of the compound semiconductor elements in the direction from the source to the drain.

Abstract: It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.

Abstract: A photoelectric conversion substrate includes: a substrate; plural pixels, each provided with a sensor portion and a switching element that are formed on the substrate, the sensor portion including a photoelectric conversion element that generates charge according to illuminated light, and the switching element reading out the charge from the sensor portion; a flattening layer that flattens the surface of the substrate having the switching elements and the sensor portions formed thereon; and a first conducting member that is formed over the whole face of the flattening layer and configured such that a voltage applied to the first conducting member is selected to be a predetermined voltage.

Abstract: Solid state transducers with state detection, and associated systems and methods are disclosed. A solid state transducer system in accordance with a particular embodiment includes a support substrate and a solid state emitter carried by the support substrate. The solid state emitter can include a first semiconductor component, a second semiconductor component, and an active region between the first and second semiconductor components. The system can further include a state device carried by the support substrate and positioned to detect a state of the solid state emitter and/or an electrical path of which the solid state emitter forms a part. The state device can be formed from at least one state-sensing component having a composition different than that of the first semiconductor component, the second semiconductor component, and the active region. The state device and the solid state emitter can be stacked along a common axis.

Abstract: A light-emitting device and a method for manufacturing the same are provided. The light-emitting device comprises a substrate, a light-emitting element and a light-electricity-transforming element. The substrate has a first region and a second region which are non-overlapping. The light-emitting element is disposed over the substrate and located in the second region. The light-electricity-transforming element is disposed over the substrate and located in the first region. At least a portion of a side wall of the light-electricity-transforming element corresponds to at least a portion of a side wall of the light-emitting element, so that at least a side light from the light-emitting element is received and transformed into an electricity power by the light-electricity-transforming device.

Abstract: A light emitting device having a vertical structure and a method for manufacturing the same, which are capable of increasing light extraction efficiency, are disclosed. The method includes forming a light extraction layer on a substrate, forming a plurality of semiconductor layers on the light extraction layer, forming a first electrode on the semiconductor layers, forming a support layer on the first electrode, removing the substrate, and forming a second electrode on a surface from which the substrate is removed.

Abstract: A rod-shaped semiconductor device having a light-receiving or light-emitting function is equipped with a rod-shaped substrate made of p-type or n-type semiconductor crystal, a separate conductive layer which is formed on a part of the surface of the substrate excluding a band-shaped part parallel to the axis of the substrate and has a different conduction type from the conduction type of the substrate, a pn-junction formed with the substrate and separate conductive layer, a band-shaped first electrode which is formed on the surface of the band-shaped part on the substrate and ohmic-connected to the substrate, and a band-shaped second electrode which is formed on the opposite side of the first electrode across the shaft of said substrate and ohmic-connected to the separate conductive layer.

Abstract: An electronic package includes a substrate wafer having front and rear faces. An emitting integrated circuit chip is mounted to the front face of the substrate wafer and includes a light radiation optical emitter. A receiving integrated circuit chip is also mounted to the front face of the substrate wafer and includes at least one light radiation optical sensor. A transparent encapsulant extends above the optical sensor and the optical emitter. An opaque encapsulant encapsulates the transparent encapsulant. The opaque encapsulant has a front window situated above the optical emitter and which is offset laterally relative to the optical sensor. The transparent encapsulant accordingly has an uncovered front face situated above the optical emitter and offset laterally relative to the optical sensor. The opaque encapsulant may include an additional front window. The receiving integrated circuit chip further includes a second optical sensor situated opposite the additional front window.

Abstract: A light receiving and emitting device includes: a light emitting unit and a light receiving unit which are provided on a same substrate, wherein the light emitting unit includes an active layer sandwiched between a first clad layer and a second clad layer, a first electrode electrically connected to the first clad layer, and a second electrode electrically connected to the second clad layer, the light receiving unit includes a light-absorbing layer, at least part of the active layer forms a gain region on a current path between the first electrode and the second electrode, the gain region is provided from a first side face of the active layer to a second side face parallel to the first side face so as to be inclined with respect to a perpendicular of the first side face as seen in a planar view, a light generated in the gain region is divided, at least one of an edge face on the first side face and an edge face on the second side face, the edge faces of the gain region, into a light emitted to an outside and

Abstract: A light emitting device includes a plurality of micro diodes, which are electrically connected to constitute a bridge rectifier circuit. Each branch of the bridge rectifier circuit includes a single micro diode or a plurality of micro diodes. The light emitting device is electrically connected to an AC power source, which alternately drives the light emitting device in two current loops. Therefore, the micro diodes in two current loops of the bridge rectifier circuit emit light by turns.

Abstract: A photovoltaic organic light emitting diodes (PV-OLED) device and manufacturing method thereof are introduced. The PV-OLED device includes a substrate, a solar cell module, and a plurality of organic light emitting diodes. The solar cell module is disposed on a surface of the substrate. The organic light emitting diodes are disposed on the same surface of the substrate that the solar cell module is disposed on. The organic light emitting diode is electrically isolated from the solar cell module. The solar cell module can apply power to the organic light emitting diodes for emitting light.

Abstract: The present disclosure relates to a thin film transistor array panel and a manufacturing method thereof.

Abstract: According to an aspect of the invention, an optical functional element includes a substrate, a semiconductor element portion, and a light emitting element portion. The semiconductor element portion includes a first part of a semiconductor multi layer structure formed on the substrate. The light emitting element portion includes a second part of the semiconductor multi layer structure and light emitting element structure formed on the second part of the semiconductor multi layer structure.

Abstract: An optoelectronics chip-to-chip interconnects system is provided, including at least one packaged chip to be connected on the printed-circuit-board with at least one other packaged chip, optical-electrical (O-E) conversion mean, waveguide-board, and (PCB). Single to multiple chips interconnects can be interconnected provided using the technique disclosed in this invention. The packaged chip includes semiconductor die and its package based on the ball-grid array or chip-scale-package. The O-E board includes the optoelectronics components and multiple electrical contacts on both sides of the O-E substrate. The waveguide board includes the electrical conductor transferring the signal from O-E board to PCB and the flex optical waveguide easily stackable onto the PCB to guide optical signal from one chip-to-other chip. Alternatively, the electrode can be directly connected to the PCB instead of including in the waveguide board. The chip-to-chip interconnections system is pin-free and compatible with the PCB.

Abstract: A method for optical isolation in a clear mold package is provided. The method comprises forming a substrate and mounting a first component on the substrate. The method also comprises depositing a clear layer over the first component and the substrate and fabricating a trench in the clear layer near the first component, wherein the trench extends from a top surface of the substrate to the top surface of the clear layer. Further, the method comprises depositing an opaque material within the trench.

Abstract: A laser and electroabsorption modulator (EAM) are monolithically integrated through an etched facet process. Epitaxial layers on a wafer include a first layer for a laser structure and a second layer for an EAM structure. Strong optical coupling between the laser and the EAM is realized by using two 45-degree turning mirrors to route light vertically from the laser waveguide to the EAM waveguide. A directional angled etch process is used to form the two angled facets.

Abstract: An organic light emitting display device. The organic light emitting display device includes a substrate having a pixel region in which pixels are formed and a non-pixel region in which a light sensor is formed, an insulating film formed on the substrate, a first electrode formed on the insulating film and formed of a reflective material reflecting light, the first electrode being formed on the entire surface of the insulating film except for a region between the pixels and a region over the light sensor, a pixel defining film exposing a region of the first electrode and formed on the insulating film, an organic light emitting layer formed on the exposed region of the first electrode, and a second electrode formed on the organic light emitting layer. The first electrode is formed to have a greater area than that of the organic light emitting layer.

Abstract: The present invention provides a semiconductor device having an integrated circuit formed by a low cost glass substrate, which can respond to the increase of an amount of information, and which offers high performance at high speed.

Abstract: A vertical light emitting diode (VLED) die includes a metal base; a mirror on the metal base; a p-type semiconductor layer on the reflector layer; a multiple quantum well (MQW) layer on the p-type semiconductor layer configured to emit light; and an n-type semiconductor layer on the multiple quantum well (MQW) layer. The vertical light emitting diode (VLED) die also includes an electrode and an electrode frame on the n-type semiconductor layer, and an organic or inorganic material contained within the electrode frame. The electrode and the electrode frame are configured to provide a high current capacity and to spread current from the outer periphery to the center of the n-type semiconductor layer.

Abstract: In a light emitting device and a fabricating method thereof are provide, wherein the light emitting device includes a light converting element, and a light emitting element positioned on the light converting element and including a first electrode, a light emitting structure and a second electrode, the first electrode formed on the light emitting element and having a first opening, the light emitting structure having a first conductive pattern of a first conductivity type, a light emitting pattern, and a second conductive pattern of a second conductivity type, which are sequentially stacked, and the second electrode formed on the second conductive pattern, wherein the light generated from the light emitting structure reaches the light converting element through the first opening.

Abstract: An optical sensor circuit (20) includes a transistor (20c) and a transistor (20d). The transistor (20c) is connected in series with the transistor (20d). The transistor (20d) is configured to receive light. A black matrix is provided so as to face the transistor (20c). A voltage generated at a connecting point (i.e., node (netB)) of the transistor (20d) and the transistor (20c) varies depending on intensity of light received via the transistor (20d).

Abstract: A third semiconductor layer 14 is formed on a light receiving surface 13a of a second semiconductor layer 13 so as to cover the light receiving surface 13a of the second semiconductor layer 13 at least partially in a plan view. A first semiconductor layer 10 is formed on an opposite surface of the light receiving surface 13a of the second semiconductor layer 13 so as to overlap the light receiving surface 13a and the third semiconductor layer 14 at least partially in a plan view. In the second semiconductor layer 13, the relative light receiving sensitivity to respective wavelengths of light has the highest value at a wavelength in an infrared region.

Abstract: One aspect of an LED package, which is covered by this disclosure, includes at least two LED emitters located on a substrate wherein each of the at least two LED emitters forms an emitting area. The emitting area is substantially equal to a reflective area of the LED package, and the LED package has an optical axis that is substantially non-parallel to an optical axis of each of the at least two LED emitters.

Abstract: According to one embodiment, a solid-state imaging device includes a pixel array and an infrared light eliminating portion. The pixel array has a plurality of pixel cells arranged as being array-shaped. The pixel array detects a signal level of each color light as being shared for each pixel cell. The infrared light eliminating portion eliminates infrared light from light proceeding toward a photoelectric conversion element. The infrared light eliminating portion is arranged for each pixel cell. The infrared light eliminating portion has selection wavelength being set in accordance with color light to be a detection target of the pixel cell.

Abstract: Quantitative understanding of neural and biological activity at a sub-millimeter scale requires an integrated probe platform that combines biomarker sensors together with electrical stimulus/recording sites. Optically addressed biomarker sensors within such an integrated probe platform allows remote interrogation from the activity being measured. Monolithic or hybrid integrated silicon probe platforms would beneficially allow for accurate control of neural prosthetics, brain machine interfaces, etc as well as helping with complex brain diseases and disorders. According to the invention a silicon probe platform is provided employing ultra-thin silicon in conjunction with optical waveguides, optoelectronic interfaces, porous filter elements, and integrated CMOS circuitry. Such probes allowing simultaneously analysis of both neural electrical activities along with chemical activity derived from multiple biomolecular sensors with porous membrane filters.

Abstract: Provided is a technique of effectively extracting the beams of light excited in an LED light emitter other than the light beams emitted from a light-emitting region in the direction of a light-extraction surface. A pit with a tapered sidewall is formed in a substrate. A thin-film semiconductor element is attached to the pit. Light beams emitted from a side surface of the thin-film semiconductor element are reflected by the sidewall of the thin-film semiconductor element. Achieved thereby is effective extraction of light beams other than the light beams emitted from the light-emitting region in the direction of the light-extraction surface.

Abstract: A semiconductor chip module includes a first semiconductor chip possessing a first surface and a second surface which faces away from the first surface, and having a first transmission and reception unit which includes at least two light emitting sections and at least two light receiving sections arranged in a form of a matrix on the first surface and configured to transmit and receive optical signals; and a second semiconductor chip disposed over the first surface of the first semiconductor chip, and having a second transmission and reception unit which includes at least two light emitting sections and at least two light receiving sections arranged in a form of a matrix on a surface of the second semiconductor chip facing the first semiconductor chip and configured to transmit and receive optical signals.

Abstract: The present invention relates to a light-emitting diode die package having an LED die and an accommodating housing. The LED die has a first doped layer doped with a p- or n-type dopant and a second doped layer doped with a different dopant from that doped in the first doped layer. Each of the first and second doped layers has an electrode-forming surface formed with an electrode, on which an insulation layer is formed. The insulation layer is formed with exposure holes for exposing the electrodes corresponding thereto. Each of the exposure holes is formed inside with an electrically conductive linker. The accommodating housing has an open end through which an accommodating space is accessible. The LED die is positioned within the accommodating space in such a manner that the electrically conductive linker protrudes outwardly from the accommodating space.

Abstract: The present invention aims to provide a semiconductor light emitting device that may be firmly attached to a substrate with maintaining excellent light emitting efficiency, and a manufacturing method of the same, and a lighting apparatus and a display apparatus using the same. In order to achieve the above object, the semiconductor light emitting device according to the present invention includes a luminous layer, a light transmission layer disposed over a main surface of the luminous layer, and having depressions on a surface facing away from the luminous layer, and a transmission membrane disposed on the light transmission layer so as to follow contours of the depressions, and light from the luminous layer is irradiated so as to pass through the light transmission layer and the transmission membrane.

Abstract: In a silicon-based light emitting diode-photodiode (LED-PD) arrangement, the LED is implemented as an avalanche LED (ALED) and the ALED and PD are integrated into a common integrated circuit. The ALED is formed around a cross-shaped PD and is separated from the PD by a deep trench region. In order to create current crowding close to the deep trench the ALED includes an NBL or PBL having a narrowing at its end.

Abstract: An organic light emitting device and a manufacturing method thereof, including a first signal line and a second signal line intersecting each other on an insulating substrate, a switching thin film transistor connected to the first signal line and the second signal line, a driving thin film transistor connected to the switching thin film transistor, and a light emitting diode (“LD”) connected to the driving thin film transistor. The driving thin film transistor includes a driving control electrode and a driving semiconductor overlapping the driving control electrode, crystallized silicon having a doped region and a non-doped region, a driving gate insulating layer disposed between the driving control electrode and the driving semiconductor, and a driving input electrode and a driving output electrode opposite to each other on the driving semiconductor, wherein the interface between the driving gate insulating layer and the driving semiconductor includes nitrogen gas.

Abstract: A transistor array substrate includes a substrate, plural pads, plural shorting bars, at least one pixel array, plural first wires, and plural second wires. The substrate has at least one panel region and a peripheral circuit region surrounding the panel region. The pads and the shorting bars are disposed in the peripheral circuit region. The pixel array, the first wires, and the second wires are disposed in the panel region. The panel region has a pair of first edges and a pair of second edges. The first edges are connected between the second edges. The shorting bars are connected to the pads. The first wires and the second wires are electrically connected to the pixel array. The first wires are connected to some shorting bars through one of the first edges. The second wires are connected to the other shorting bars through at least one second edge.

Abstract: A semiconductor device includes a photodiode formed using a silicon substrate, a wide-bandgap semiconductor layer formed on the silicon substrate and having a bandgap larger than that of silicon, and a switching element formed using the wide-bandgap semiconductor layer. The switching element is electrically connected to the photodiode so as to be on/off-controlled by a control signal from the photodiode.

Abstract: An LED package containing integrated circuitry for matching a power source voltage to the LED operating voltage, LEDs containing such integrated circuitry, systems containing such packages, and methods for matching the source and operating voltages are described. The integrated circuitry typically contains a power converter and a constant current circuit. The LED package may also contain other active or passive components such as pin-outs for integrated or external components, a transformer and rectifier, or a rectifier circuit. External components can include control systems for regulating the LED current level or the properties of light emitted by the LED. Integrating the power supply and current control components into the LED can provide for fabrication of relatively small LEDs using fewer and less device-specific components.

Abstract: A light energy reuse type display device, light-emitting device, and lighting device with low power consumption, which efficiently convert light emitted from a light source (including light emission from a light-emitting element) into electric power, are provided. A photoelectric conversion element interposed between a pair of substrates functions as a color filter (a colored layer); thus, light emitted from a light source (including light emission from a light-emitting element) is efficiently converted into electric power, and a light energy reuse type display device, light-emitting device, and lighting device with low power consumption can be provided.