Abstract: Provided is an optical device, a method for manufacturing the same, and a display device. The optical device includes a chip substrate and a quantum dot film. The quantum dot film includes a quantum dot functional layer, a first package substrate, a second package substrate, and a prism structure and/or a uniform-light diffusing film.

Abstract: Provided is a semiconductor wafer in which a nitride crystal layer on a silicon wafer includes a reaction suppressing layer to suppress reaction between a silicon atom and a Group-III atom, a stress generating layer to generate compressive stress and an active layer in which an electronic element is to be formed, the reaction suppressing layer, the stress generating layer and the active layer are arranged in an order of the reaction suppressing layer, the stress generating layer and the active layer with the reaction suppressing layer being positioned the closest to the silicon wafer, and the stress generating layer includes a first crystal layer having a bulk crystal lattice constant of al and a second crystal layer in contact with a surface of the first crystal layer that faces the active layer, where the second crystal layer has a bulk crystal lattice constant of a2 (a1<a2).

Abstract: A display device includes: a light provider; a wavelength conversion layer above the light provider and including a first surface and sides; and a capping layer on the wavelength conversion layer and including a first area provided on the sides of the wavelength conversion layer and a second area provided on the first surface of the wavelength conversion layer, and the first area of the capping layer includes cracks.

Abstract: A light emitting diode pixel for a display includes a first subpixel, a second subpixel, and a third subpixel, each of the first, second, and third subpixels including a first LED sub-unit including a first type of semiconductor layer and a second type of semiconductor layer, a second LED sub-unit disposed on the first LED sub-unit and including a first type of semiconductor layer and a second type of semiconductor layer, and a third LED sub-unit disposed on the second LED sub-unit and including a first type of semiconductor layer and a second type of semiconductor layer, in which the second and third LED sub-units of the first subpixel are electrically floated, the first and third LED sub-units of the second subpixel are electrically floated, and the first and second LED sub-units of the third subpixel are electrically floated.

Abstract: An organic light emitting device can include first and second electrodes formed to face each other on a substrate; a first stack interposed between the first and second electrode and configured with a hole injection layer, a first hole transportation layer, a first light emission layer and a first electron transportation layer which are stacked on the first electrode; a second stack interposed between the first stack and the second electrode and configured with a second hole transportation layer, a second light emission layer, a third light emission layer and a second electron transportation layer which are stacked on the first stack; a third stack interposed between the second stack and the second electrode and configured with a third hole transportation layer, a fourth light emission layer, a third electron transportation layer and an electron injection layer which are stacked on the second stack; and a first charge generation layer interposed between the first and second stacks and a second charge generati

Abstract: An epitaxial wafer for plant lighting light-emitting diodes (LED), the epitaxial wafer includes: a growth substrate; a first red-light epitaxial laminated layer; a distributed Bragg reflector (DBR) semiconductor laminated layer; and a second red-light epitaxial laminated layer; wherein: the first red-light epitaxial laminated layer comprises a first N-type ohmic contact layer, a first N-type covering layer, a first light-emitting layer, a first P-type covering layer, and a first P-type ohmic contact layer; and the second red-light epitaxial laminated layer comprises a second N-type ohmic contact layer, a second N-type covering layer, a second light-emitting layer, a second P-type covering layer, and a second P-type ohmic contact layer.

Abstract: The present invention provides an LED module that can prevent breakage of an LED chip due to pulse lighting for a flash when the LED module is used in a flashing lamp. An LED module (10) for flashing lamp includes: an LED substrate (13); plural LEDs (12); and plural resin layers (11). In the LED module (10), the LEDs (12) are mounted on a mounting surface of the LED substrate (13). Each resin layer (11) is stacked on a surface of each LED (12) opposite to the LED substrate (13). Adjacent resin layers (11) stacked on the LEDs (12) are separated from each other.

Abstract: This disclosure is related to post processing steps for integrating of micro devices into system (receiver) substrate or improving the performance of the micro devices after transfer. Post processing steps for additional structure such as reflective layers, fillers, black matrix or other layers may be used to improve the out coupling or confining of the generated LED light. In another example, dielectric and metallic layers may be used to integrate an electro-optical thin film device into the system substrate with the transferred micro devices. In another example, color conversion layers are integrated into the system substrate to create different output from the micro devices.

Abstract: A semiconductor light emitting device includes a plurality of light emitting structures, an isolation layer covering side surfaces of the plurality of light emitting structures and insulating the plurality of light emitting structures from one another, a partition layer formed on the isolation layer, a first protective layer covering top surfaces of the plurality of light emitting structures and side walls of the partition layer, a reflective layer covering the first protective layer and disposed on the side walls of the partition layer, and a second protective layer covering the reflective layer.

Abstract: A light valve device includes a driving substrate having a shading zone and a photic zone. A shading unit includes a first shading plate, two driving devices, and second shading plates respectively connected to the two driving devices. The driving devices and the first shading plate are fixed in the shading zone adjacent to the driving substrate. The first shading plate is between the two driving devices. The driving devices are operable to drive the two second shading plates close to the first shading plate to make the second shading plates face the photic zone of the driving substrate for preventing light entering the driving substrate. By locating the light valve device under the sub pixel, the dynamic contrast can be raised to promote the display effect.

Abstract: A 3D semiconductor wafer, the wafer including: a first device, where the first device includes a first level, the first level including first transistors, and where the first device includes a second level, the second level including first interconnections; a second device overlaying the first device, where the second device includes a third level, the third level including second transistors, and where the second device includes a fourth level, the fourth level including second interconnections, where the first device is substantially larger in area than the second device; and a plurality of connection paths, where the plurality of connection paths provides connections from a plurality of the first transistors to a plurality of the second transistors.

Abstract: A light emitting diode (LED) module and display for hiding physical gaps between modules is provided. An LED module comprises: a board including at least one edge; and an array of LEDs at the board, the array comprising: first LEDs and second LEDs, smaller than the first LEDs, the second LEDs located along the at least one edge of the board, the first and second LEDs all being at a common pitch distance, adjacent sides of adjacent first LEDs separated by a first distance, and the second LEDs being at a second distance from the at least one edge of the board, the second distance smaller than the first distance. The modules may be incorporated into an LED display.

Abstract: A cracks propagation preventing, polarization film attaches to outer edges of a lower inorganic layer of an organic light emitting diodes display where the display is formed on a flexible substrate having the lower inorganic layer blanket formed thereon. The organic light emitting diodes display further includes a display unit positioned on the inorganic layer and including a plurality of organic light emitting diodes configured to display an image, and a thin film encapsulating layer covering the display unit and joining with edges of the inorganic layer extending beyond the display unit.

Abstract: A light-emitting device includes: a resin package including: a lead part including a first lead and a second lead, each including a main body portion and a raised portion connected to the main body portion, wherein an upper surface of each of the first lead and the second lead includes a first primary surface portion in the main body portion and a curved portion in the raised portion in a cross-sectional view taken in a direction perpendicular to an upper surface of the lead part, and wherein the curved portion is continuous with and curved upward from an end portion of the first primary surface portion, a resin portion, and a recess defined by a portion of the upper surface of the lead part and the resin portion; and a light-emitting element mounted in the resin package. The curved portion is buried in the resin portion.

Abstract: A manufacturing process for a micro-device panel including the following steps is provided. A plurality of micro-device sets are formed on a transferring substrate, and each of the plurality of micro-device sets has at least one micro-device. A plurality of receiving blocks are provided. The plurality of micro-device sets are respectively transferred from the transferring substrate onto the plurality of receiving blocks to form a plurality of building blocks by a transfer head. The plurality of building blocks are placed on a receiving substrate. Finally, the adjacent building blocks on the receiving substrate are connected by a plurality of connecting devices to form the micro-device panel.

Abstract: A stack of strata containing LEDs is fabricated by repeatedly bonding unpatterned epitaxial structures. Because the epitaxial structures are unpatterned (e.g., not patterned into individual micro LEDs), requirements on alignment are significantly relaxed. One example is an integrated multi-color LED display panel, in which arrays of micro LEDs are integrated with corresponding driver circuitry. Multiple strata of micro LEDs are stacked on top of a base substrate that includes the driver circuitry. In this process, each stratum is fabricated as follows. An unpatterned epitaxial structure is bonded on top of the existing device. The epitaxial structure is then patterned to form micro LEDs. The stratum is filled and planarized to allow the unpatterned epitaxial structure of the next stratum to be bonded. This is repeated to build up the stack of strata.

Abstract: A light emitting device includes one or more light emitting elements; a first lead on which the one or more light emitting elements are disposed; a second lead electrically connected to the one or more light emitting elements; a resin member supporting the first lead and the second lead, and including one or more projected portions; and a resin frame surrounding the light emitting elements, and covering at least a portion of each of the projected portions.

Abstract: A semiconductor light emitting device includes a mount section having an insulating property connected to a heat sink, a plurality of semiconductor laser elements disposed on the mount section, and a heat radiation block having an insulating property disposed on the plurality of semiconductor laser elements. A first wiring made of a metal is disposed on an upper surface of the mount section, and a second wiring made of a metal is disposed on a lower surface of the heat radiation block, a part of the second wiring being electrically connected to the first wiring. By electrically connecting the first wiring and the second wiring to each of the plurality of semiconductor laser elements, the plurality of semiconductor laser elements are connected in series, and have a same polarity with each other at a side that each of the plurality of semiconductor laser elements is connected to the first wiring.

Abstract: A ?LED including an epitaxial stacked layer, a first electrode and a second electrode is provided. The epitaxial stacked layer includes a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer. The epitaxial stacked layer has a first mesa portion and a second mesa portion to form a first type conductive region and a second type conductive region respectively. The first electrode is disposed on the first mesa portion. The second electrode is disposed on the second mesa portion. The second electrode contacts the first type doped semiconductor layer, the light emitting layer and the second type doped semiconductor layer located at the second mesa portion. Moreover, a manufacturing method of the ?LED is also provided.

Abstract: An example of an optical device of the present disclosure includes a substrate, an obverse-surface conductive layer, a reverse-surface conductive layer, a first conductive part, an optical element and a reflector. The first conductive part extends through the substrate and overlaps with a first obverse-surface conducting region of the obverse-surface conductive layer and the reverse-surface conductive layer as viewed in a thickness direction of the substrate. The reflector has an inner surface that surrounds the optical element as viewed in the thickness direction. The optical element is located on first obverse-surface conducting region, and the second obverse-surface conducting region is located between the first obverse-surface conducting region and the inner surface of the reflector as viewed in the thickness direction. A second obverse-surface conducting region of the obverse-surface conductive layer is spaced apart from the inner surface of the reflector as viewed in the thickness direction.

Abstract: LED lamp systems having improved light quality are disclosed. The lamps emit more than 500 lm and more than 2% of the power in the spectral power distribution is emitted within a wavelength range from about 390 nm to about 430 nm.

Abstract: An organic EL display device according to an embodiment of the present invention includes: a base material; a plurality of pixels; a lower electrode which each of the plurality of pixels is provided with; an organic insulation layer which sections the plurality of pixels; an organic material layer which is disposed on the lower electrode and the organic insulation layer, and includes a plurality of layers; and an upper electrode on the organic material layer. A level difference part is positioned on an upper surface of the organic insulation layer, a first layer included in the organic material layer is divided at the level difference part, or has a thin part being thinner at the level difference part than at a position at which the first layer faces the lower electrode, and a second layer included in the organic material layer is not divided at the level difference part.

Abstract: A micro LED display panel includes a blue LED layer, a green LED layer, and a red LED layer. The blue LED layer, the green LED layer, and the red LED layer are in a stacked formation. The blue, the green, and the red LED layers each include a plurality of micro LEDs spaced apart from each other. The composition of the layers is such that light emitted from all but the bottom layer is able to pass through transparent material in other layers before exiting the panel and being viewed.

Abstract: The present disclosure relates to a manufacturing method of colorful Micro-LEDs. The method includes: bringing the array of the blue-light Micro-LEDs into contact with a first-color photosensitive solution and a second-color photosensitive solution; turning on first preset blue-light Micro-LEDs and the second preset blue-light Micro-LEDs of the array for conducting polymerization on the first and the second preset blue-light Micro-LEDs to form at least one lens. After the lens are formed, the first preset blue-light Micro-LEDs emit the light beams of the first color, the second preset blue-light Micro-LEDs emit the light beams of the second color, and the remaining blue-light Micro-LEDs emit the blue light beams to constitute three colors so as to obtain the colorful Micro-LEDs. In addition, the present disclosure also relates to a display module having the above array of the Micro-LEDs, and a terminal including the display module.

Abstract: A semiconductor component and an illumination device is disclosed. In an embodiment the semiconductor component includes a semiconductor chip configured to generate a primary radiation having a first peak wavelength and a radiation conversion element arranged on the semiconductor chip. The radiation conversion element includes a quantum structure that converts the primary radiation at least partly into secondary radiation having a second peak wavelength and a substrate that is transmissive to the primary radiation.

Abstract: A lighting apparatus a first group of at least one first solid state emitter, each first solid state emitter including a first light emitting diode (“LED”) that, when excited, emits light having a peak wavelength in a range between about 440 nm and about 475 nm, and a second group of at least one second solid state emitter, each second solid state emitter comprising a second LED that, when excited, emits light having a peak wavelength in a range between about 390 nm and about 415 nm. Between about 2% and about 15% of a spectral power of light emitted from the lighting apparatus is light having wavelengths in the range between about 390 nm and about 415 nm.

Abstract: A light emitting device includes a light emitting diode (“LED”), a first luminescent material that is configured to emit light having an emission peak in a green wavelength range, and a second luminescent material that is configured to emit narrow-spectrum light having an emission peak in an orange wavelength range. A light output of the light emitting device, which includes a portion of the light emitted by the LED, the light having the emission peak in the green wavelength range, and the light having the emission peak in the orange wavelength range, provides an appearance of white light. Related devices are also discussed.

Abstract: Disclosed is a color material dispersion liquid for a color filter, the dispersion liquid being capable of forming a high-luminance coating film with excellent light resistance; a color resin composition for a color filter, the composition being capable of forming a high-luminance coating film with excellent light resistance; a color material that has, while it can form a high-luminance coating film, excellent light resistance; a high-contrast, high-luminance color filter; a liquid crystal display device including the color filter; and a light-emitting display device including the color filter. The color material dispersion liquid for a color filter, includes: (A) a color material, (B) a dispersant and (C) a solvent, wherein the color material (A) contains a cerium lake color material of an acid dye.

Abstract: A fan-out wafer level light-emitting diode package method for packaging a plurality of light-emitting diode chips on a wafer protective film, the method comprising: forming a package surface layer on first electrodes of the light-emitting diode chips, and then forming a plurality of leading electrodes electrically connected to the first electrodes on the package surface layer, cutting the light-emitting diode chips, sorting and testing as well as regrouping the light-emitting diode chips, covering sides of the light-emitting diode chips with a package layer, drilling and filling a conductive material on the package layer to form a plurality of common electrodes, and then printing a plurality of common electrical circuits, electrically connecting each of the common electrical circuits to one of the common electrodes and the leading electrodes, and finally covering with a circuit protection layer to complete the process.

Abstract: A light-emitting device comprises a substrate having a top surface and a plurality of patterned units protruding from the top surface; and a light-emitting stack formed on the substrate and having an active layer with a first surface substantially parallel to the top surface, wherein one of the plurality of patterned units comprises a plurality of connecting sides constituting a first polygon shape in a top view of the light-emitting device, wherein the one of the plurality of patterned units comprises a vertex and a plurality of inclined surfaces respectively extending from the plurality of connecting sides, the plurality of inclined surfaces commonly joining at the vertex in a cross-sectional view of the light-emitting device, the vertex being between the top surface of the substrate and the first surface of the active layer, and the plurality of inclined surfaces comprises a second polygon shape in the cross-sectional view of the light-emitting device.

Abstract: The present disclosure provides a Micro LED display panel and a display device, which can realize a double-sided display in a single display panel to save cost. The Micro LED display panel includes a plurality of light-emitting elements in a matrix. Each light-emitting element includes a first electrode, a second electrode, and a semiconductor layer, which are stacked up, and the semiconductor layer is sandwiched between the first and second electrodes. The semiconductor layer includes a first semiconductor layer, an active layer, and a second semiconductor layer, which are stacked up along a direction from the first electrode to the second electrode. The light-emitting elements include a plurality of first and second light-emitting elements, the first light-emitting elements have a first emitting direction from the first electrode to the second electrode, and the second light-emitting elements have a second emitting direction from the second electrode to the first electrode.

Abstract: A light-emitting device includes a first light-emitting element emitting blue light, a second light-emitting element emitting green light, and a third light-emitting element emitting red light. A first reflective electrode and a first transparent conductive film, a second reflective electrode and a second transparent conductive film, and a third reflective electrode and a third transparent conductive film are stacked in the first to third light-emitting elements, respectively. A first light-emitting layer, a charge-generation layer, a second light-emitting layer, and an electrode are stacked in this order over each of the first transparent conductive film, the second transparent conductive film, and the third transparent conductive film. The electrode has functions of transmitting and reflecting light. The first to third reflective electrodes contain silver. The first transparent conductive film is thicker than the third transparent conductive film.

Abstract: An overcoated LED filament includes an LED filament comprising one or more LED dies coated with an underlying layer of a phosphor material exhibiting a colored appearance, and an over-coated layer comprising a resinous material loaded with a scattering agent that causes the LED filament to appear white.

Abstract: A light-emitting component provides an emitter layer including phosphorescent and fluorescent emitter materials, and at least one predefined first and second display regions. The first region has both emitter materials. The second region has the phosphorescent emitter material. A first electromagnetic radiation is emitted upon the transition from the first excited state to the ground state of the phosphorescent emitter material. A second electromagnetic radiation is emitted upon the transition from the excited state to the ground state of the fluorescent emitter material. The excited state of the fluorescent emitter material is occupied by an energy transfer from the second excited state of the phosphorescent emitter material to the excited state of the fluorescent emitter material so that a mixed light composed of first and second electromagnetic radiations is emittable from the first region, and the light that is emittable from the second region is free of second electromagnetic radiation.

Abstract: There is herein described a ceramic wavelength converter having a high reflectivity reflector. The ceramic wavelength converter is capable of converting a primary light into a secondary light and the reflector comprises a reflective metal layer and a dielectric buffer layer between the ceramic wavelength converter and the reflective metal layer. The buffer layer is non-absorbing with respect to the secondary light and has an index of refraction that is less than an index of refraction of the ceramic wavelength converter. Preferably the reflectivity of the reflector is at least 80%, more preferably at least 85% and even more preferably at least 95% with respect to the secondary light emitted by the converter.

Abstract: A display including a back plate, a plurality of light emitting devices and a plurality of compensating light emitting devices is provided. The back plate has a plurality of pixels and at least one compensated region. The compensated region includes some of the pixels. The light emitting devices are arranged in all the pixels on the back plate. The compensated light emitting devices are disposed on the back plate and located in each pixel in the compensated region respectively. At least one of the pixels in the compensated region is dead pixel. Besides, a repair method of the display is also provided.

Abstract: The present disclosure provides a method for attaching a wiring protective film layer, a wiring structure and a display panel. The attaching method comprises: forming a protective structure comprising a protective film layer and a carrier layer disposed in stack on a wiring layer, wherein the wiring layer and the protective film layer are in contact; and removing the carrier layer and remaining the protective film layer.

Abstract: A pixel light emitting device including a substrate, a plurality of light emitting elements and a shading layer disposed around each of the light emitting elements is provided. Each of the light emitting elements includes a first electrode layer disposed on the substrate, a second electrode layer not contacting with the first electrode layer, a first semiconductor layer disposed on the first electrode layer, a second semiconductor layer disposed on the second electrode layer and covering the first semiconductor layer, a light emitting layer disposed on the second semiconductor layer, a third semiconductor layer disposed on the light emitting layer, and at least one first penetrator, which penetrates the light emitting layer and the second semiconductor layer to form an electrical connection between the first semiconductor layer and the third semiconductor layer.

Abstract: The present invention is directed to leadless LED packages and LED displays utilizing white ceramic casings and thin/low profile packages with improved color mixing and structural integrity. In some embodiments, the improved color mixing is provided, in part, by the white ceramic package casing, which can help reflect light emitted from each LED in many directions away from the device. The non-linear arrangement of the LEDs can also contribute to improved color-mixing. The improved structural integrity can be provided by various features in the bond pads that cooperate with the casing for a stronger package structure. Moreover, in some embodiments the thinness/low profile of each package is attributed to its leadless structure, with the bond pads and electrodes electrically connected via through-holes.

Abstract: A display panel including a backplane, a first bonding layer, a plurality of micro light-emitting diodes, a first insulation layer, and a second bonding layer is provided. The first bonding layer is disposed on the backplane. The micro light-emitting diodes are disposed on the first bonding layer and are electrically connected to the first bonding layer. The first insulation layer is located between any adjacent two of the micro light-emitting diodes. The first insulation layer has a concave-convex surface. The second bonding layer is disposed on the micro light-emitting diodes and the first insulation layer and is electrically connected to the micro light-emitting diodes. A micro light-emitting diode apparatus including a substrate, a plurality of micro light-emitting diodes, and a first insulation layer is provided. The first insulation layer is located between any adjacent two of the micro light-emitting diodes. The first insulation layer has a concave-convex surface.

Abstract: Provided is a light emitting device configured to suppress deterioration in a balance of white light emission and increase a service life. The light emitting device includes a red light emitting layer, a blue light emitting layer, a green light emitting layer, a first intermediate layer configured to adjust a transfer of holes and electrons between the red light emitting layer and the blue light emitting layer, and a second intermediate layer configured to adjust the transfer of holes and electrons between the blue light emitting layer and the green light emitting layer. The intermediate layers and the blue light emitting layer each contain an assist dopant material, a concentration of the assist dopant material in the intermediate layers being greater than a concentration of the assist dopant material in the blue light emitting layer.

Abstract: A substrate for a light emitting device includes: a plurality of wiring patterns, each including: a first conductive pattern including: a light emitting element mounting region defined by a first, second, third, and fourth sides in a plan view, and a contact region; and a second conductive pattern surrounding a portion of the first side where the contact region is not present, an entirety of the second side, and a portion of or an entirety of the third side, wherein a first end portion of the second conductive pattern at the third side is positioned nearer to the fourth side than a second end portion of the second conductive pattern at the first side is to the fourth side. The third side of a second wiring pattern faces the first side of a first wiring pattern.

Abstract: A micro device transferring apparatus includes: a base; and a stamping array disposed on the base. The stamping array includes at least two transferring projections protruding from the base at a predetermined spacing therebetween. According to the present disclosure, the adhesion between a micro device and a target substrate can be enhanced, and the transferring apparatus can be used repeatedly and simply controlled so that the cost for handling the micro device can be saved. In addition, the positions of micro devices can be scaled in multiple dimensions, so that the micro devices can be mounted in a scalable manner.

Abstract: An organic light emitting display device includes a plurality of pixels. Each pixel includes a first electrode, first, second, and third light emitting layers on the first electrode, a second electrode on the first, second, and third light emitting layers, a fourth light emitting layer on the second electrode, and a third electrode on the fourth light emitting layer. The first, second, and third light emitting layers respectively emit first light, second light, and third light emitted in a first mode, and the fourth light emitting layer emits fourth light in a second mode.

Abstract: An LED arrangement uses a tapped driver driven by a rectified mains input and placed over a light output surface. There are at least first and second groups of LEDs on the light output surface. The total light output density for the LEDs of the second group (which are turned on for less of the mains cycle) per unit area of the light output surface is greater than the total light output density for the LEDs of the first group per unit area of the light output surface. A fraction of a light emitting surface of the second group (16) of LEDs to a second area (20B) of the light output surface occupied in a macro view by the second group (16) of LEDs, is larger than a fraction of a light emitting surface of the first group (14) of LEDs to a first area (20A) of the light output sur face occupied in a macro view by the first group (14) of LEDs. This means the light output density when averaged over time is made more consistent between the two (or more) groups of LEDs.

Abstract: A light emitting device includes: a covering member including a first light-reflective member having a through-hole, and a light-transmissive resin disposed in the through-hole; a light-emitting element arranged to face the light-transmissive resin; a second light-reflective member arranged to face the first light-reflective member around the light-emitting element, the second light-reflective member covering a lateral surface of the light-emitting element; and a bonding member bonding the light-transmissive resin and the light-emitting element, the bonding member covering at least a part of the lateral surface of the light-emitting element. The light-transmissive resin contains a wavelength-conversion material distributed predominantly on either (i) a side of a lower surface of the light-transmissive resin facing the light-emitting element, or (ii) a side of an upper surface of the light-transmissive resin apart from the light-emitting element.

Abstract: A light source module including a casing, a light guide plate, at least one light emitting element, and a reflector is provided. The light guide plate includes a plate body and an optical microstructure array. The optical microstructure array is located at a top surface of the plate body and includes a plurality of microstructure units. The microstructure units are recessed from the top surface towards the bottom surface and are shaped as inverted square pyramids, and a pyramid portion of each of the inverted square pyramids is formed by at least four surfaces. Each of the microstructure units includes two opposite first surfaces and two opposite second surfaces arranged in an alternating manner. Further, in each of the microstructure units, angles included between the two first surfaces and the top surface are identical, and angles included between the two second surfaces and the top surface are identical.

Abstract: A multicolor light-emitting element using fluorescence and phosphorescence, which has a small number of manufacturing steps owing to a relatively small number of layers to be formed and is advantageous for practical application can be provided. In addition, a multicolor light-emitting element using fluorescence and phosphorescence, which has favorable emission efficiency is provided. A light-emitting element which includes a light-emitting layer having a stacked-layer structure of a first light-emitting layer exhibiting light emission from a first exciplex and a second light-emitting layer exhibiting phosphorescence is provided.

Abstract: A method of producing a plurality of optoelectronic semiconductor components includes a) preparing a composite with a semiconductor layer sequence, wherein the composite includes a plurality of component areas mechanically connected to one another; b) forming a plurality of connecting surfaces on the semiconductor layer sequence, wherein at least one connecting surface is formed on each component area; c) forming a molding compound on the semiconductor layer sequence, wherein the molding compound fills interstices between the connecting surfaces; and d) singulating the composite with the molding compound, wherein during singulation a plurality of molded bodies is formed from the molding compound, each of which is associated with a semiconductor body obtained from a component area of the composite.

Abstract: Disclosed herein is a device which inactivates microorganisms. The device includes a light emitter and at least one light-converting material arranged to convert at least a portion of light from the light emitter. Any light emitted from the light emitter and converted light emitted from the at least one light-converting material mixes to form a combined light, the combined light having a proportion of spectral energy measured in an approximately 380 nm to approximately 420 nm range of greater than approximately 10 percent. In another embodiment, the device includes a light emitter configured to emit light with wavelengths in a range of 380 to 420 nm, and at least one light-converting material including at least one optical brightener and configured to emit a second light. The first light exiting the device and the second light exiting the device mix to form a combined light, the combined light being white.