Abstract: According to one embodiment, a manufacturing method of a semiconductor device is provided. The manufacturing method includes removing a portion of an edge region from a front surface of a first substrate to form a notch in the edge region; bonding the front surface of the first substrate and a front surface of a second substrate together to forma stacked substrate, wherein the stack substrate includes an opening at a position corresponding to the notch; and filling the opening with an embedding member.

Abstract: An active matrix substrate includes a gate driver including a shift register including a plurality of unit circuits connected in multiple stages. Each of the plurality of unit circuits includes an output node, a first node, a first TFT including a first gate terminal supplied with the set signal, a first source terminal connected to the first node, and a first drain terminal supplied with a first power supply potential higher than a low-level potential of the set signal, and a second TFT including a second gate terminal connected to the first node, a second source terminal connected to the output node, and a second drain terminal supplied with the clock signal. The first TFT includes a semiconductor layer, and a first and a second gate electrodes disposed on a side of the semiconductor layer opposite to the substrate and connected to the first gate terminal.

Abstract: A circuit board includes a base layer, a seed layer formed on the base layer, and a first electrode layer formed on the seed layer. The seed layer is formed of a metal oxide with a thickness of 100 to 400 ?. The circuit board may further include an insulation layer formed on the first electrode layer and a second electrode layer formed on the insulation layer.

Abstract: A display panel and a display device are provided. The display panel includes a substrate an array layer on the substrate; a display layer located on a side of the array layer away from the substrate, wherein the display layer includes a plurality of light-emitting devices; an optical layer located on a side of the display layer away from the array layer, wherein the optical layer includes a first optical structure, and the first optical structure is arranged corresponding to intervals between the plurality of light-emitting devices; and a first light-shielding member located on a side of the optical layer facing the substrate, wherein the first light-shielding member forms a light pass opening, and the light pass opening and the first optical structure overlap each other.

Abstract: Provided is a display device including a substrate including a display area including a plurality of pixel areas, and a non-display area outside the display area, a pixel circuit layer including a plurality of circuit elements in the display area, a display element layer including a plurality of light-emitting elements in the display area on the pixel circuit layer, and first and second alignment lines on the substrate, and each including a main line at the same layer as at least one electrode on the display element layer, and a sub line electrically connected to the main line and at the same layer as at least one electrode on the pixel circuit layer, wherein the first alignment line and the second alignment line do not include the main line in the non-display area, and include the sub line to be spaced apart from one edge of the substrate.

Abstract: A light emitting module includes a board, light sources, first and second wirings, and an insulating member. Each of the light sources includes first and second electrodes exposed from an upper side. The first wiring includes first extending portions and first connecting portions. The second wiring includes second extending portions and second connecting portions. The insulating member covers the first wiring and the second extending portions of the second wiring while a portion of each of the second extending portions of the second wiring is exposed from the insulating member through a corresponding one of the openings. The second connecting portions of the second wiring are arranged on or above a part of the insulating member positioned on or above the first connecting portions of the first wiring. The second connecting portions of the second wiring are respectively connected to the second extending portions at the openings.

Abstract: A light emitting module and a driving method thereof, and a displaying device. The light emitting module includes: a light emitting base plate, wherein the light emitting base plate includes M rows and N columns of light emitting regions, and each of the light emitting regions includes a plurality of light emitting devices that are connected in series; and a driving assembly, wherein the driving assembly includes one or more driving chips, each of the driving chips includes a plurality of first leads and a plurality of second leads, each of the first leads is connected to the first terminal of a corresponding one instance of the light emitting regions, and each of the second leads is connected to the second terminal of a corresponding one instance of the light emitting regions; wherein a total quantity of the second leads in the driving assembly is integer multiples of N.

Abstract: The present invention relates to a nano-scale light emitting diode (LED) electrode assembly emitting polarized light, a method of manufacturing the same, and a polarized LED lamp having the same, and more particularly, to a nano-scale LED electrode assembly in which partially polarized light close to light that is linearly polarized having one direction is emitted as an emitted light when applying a driving voltage to the nano-scale LED electrode assembly and also nano-scale LED devices are connected to a nano-scale electrode without defects such as an electrical short circuit while maximizing a light extraction efficiency, a method of manufacturing the same, and a polarized LED lamp having the same.

Abstract: A displaying apparatus includes a pixel unit. The pixel unit includes at least one pixel having a light emitting device and a light conversion layer for converting a first wavelength of light of the light emitting device into a second wavelength of light different from the first wavelength; and an insulation layer covers side surfaces of the light emitting device and the light conversion layer.

Abstract: A light emitting element includes: a semiconductor layered structure; a first electrically insulating film covering surfaces of the semiconductor layered structure and defining a first opening in each of a first region and a second region of a first semiconductor layer, and defining a second opening in a portion above a second semiconductor layer; a first electrode electrically connected to the first semiconductor layer through each first opening; a second electrode electrically connected to the second semiconductor layer through the second opening; a first terminal located on the first electrode and electrically connected to the first electrode; a second terminal located on the second electrode and electrically connected to the second electrode; and a metal member located on a portion of the first electrically insulating film located over the second semiconductor layer and electrically insulated from the first terminal and the second terminal.

Abstract: A display device includes a display panel including: a display area at which an image is displayed and a bezel area which is adjacent to the display area, and a pixel including a pixel circuit and a light emitting layer, the pixel circuit defining a stacked structure; a window; and a pattern film between the display panel and the window, the pattern film including: a first film including a first area and a second area which respectively correspond to the display area and the bezel area of the display panel, and a pattern layer on the second film in the second area thereof. The pattern layer of the pattern film includes a same stacked structure as the stacked structure defined by the pixel circuit of the display panel.

Abstract: An apparatus comprising a substrate, one or more nanowire pillars, each having a base portion and a tip portion, a first electrode connected to the tip portions of the one or more nanowire pillars, an internal hollow cavity positioned between the substrate and the first electrode, such that at least a portion of each of the one or more nanowire pillars extend through the internal hollow cavity, and a second electrode proximate the first side of the substrate. High-performance broadband photodetectors and other optoelectronics for converting light to electricity with enhanced absorption and carrier collection.

Abstract: Provided are a micro light emitting diodes and a method of transferring the same. The method includes providing an array substrate with the micro light emitting diodes; adhering abnormal micro light emitting diodes of the array substrate on a first carrying plate; adhering the abnormal micro light emitting diodes on the first carrying plate to a laser deformation glue layer of a second carrying plate; irradiating the laser deformation glue layer by a laser to flip the abnormal micro light emitting diodes; transferring the abnormal micro light emitting diodes from the second carrying plate to a third carrying plate; and transferring again to the array substrate.

Abstract: A method of manufacturing a light-emitting module according includes providing an intermediate structure, the intermediate structure including a board, and a plurality of light sources, and forming first and second wirings on an upper surface of the intermediate structure. The first wiring includes first extending portions and first connecting portions. The second wiring includes second extending portions and second connecting portions. The forming of the first and second wirings includes forming the first extending portions and the first connecting portions and the second extending portions, forming an insulating member covering at least the first connecting portions while at least a portion of each of the second extending portions is exposed from the insulating member, and forming the second connecting portions on or above a part of the insulating member positioned on or above the first connecting portions of the first wiring.

Abstract: Provided is a display device including a substrate including a display area including a plurality of pixel areas, and a non-display area outside the display area, a pixel circuit layer including a plurality of circuit elements in the display area, a display element layer including a plurality of light-emitting elements in the display area on the pixel circuit layer, and first and second alignment lines on the substrate, and each including a main line at the same layer as at least one electrode on the display element layer, and a sub line electrically connected to the main line and at the same layer as at least one electrode on the pixel circuit layer, wherein the first alignment line and the second alignment line do not include the main line in the non-display area, and include the sub line to be spaced apart from one edge of the substrate.

Abstract: A liquid crystal device as an electro-optical device includes, an insulating layer including a first recess and a second recess that is provided continuously with the first recess and is deeper than the first recess, and a capacitance element including, a first capacitance electrode provided along a bottom surface of the second recess and a side wall of the second recess and provided along a bottom surface of the first recess, a capacitance insulating layer stacked on the first capacitance electrode, and a second capacitance electrode stacked on the capacitance insulating layer, wherein an upper surface of the second capacitance electrode at a position overlapping with the second recess, an upper surface of the first capacitance electrode at a position overlapping with the first recess, and a part of the capacitance insulating layer, are provided on the same surface as an upper surface of the insulating layer.

Abstract: A lighting device disclosed in the embodiment of the invention includes a base member including a straight portion and a curved portion, a substrate including a first substrate disposed on the straight portion of the base member and a second substrate disposed on the curved portion; a plurality of light sources disposed on each of the first and second substrates, a resin layer including a first resin portion disposed on the first substrate and a second resin portion surrounding the second substrate, and a phosphor layer disposed on the resin layer, and an outer side surface of the second resin portion may include a curved surface.

Abstract: An electronic device comprising a metal case having a metal pad attached thereto is disclosed. According to the present invention, the electronic device comprises: a metal case having a metal terminal part formed therein; a metal pad joined to the metal terminal part by laser welding; and a conductive first coating layer coated on one surface of the metal pad, wherein the light reflectivity of the first coating layer is lower than the light reflectivity of the metal pad.

Abstract: A light emitting device package according to an embodiment may comprise: a first package body including a first and a second opening; a light emitting device disposed on the first package body and including a first and a second bonding part; and a first resin disposed between the first package body and the light emitting device. The light emitting device may comprise one surface on which the first and second bonding parts are disposed, the first bonding part may comprise a first side surface and a lower surface facing the first package body, and the second bonding part may comprise a second side surface opposite to the first side surface, and a lower surface facing the first package body.

Abstract: A display device is disclosed, wherein the display device includes a light emitting unit, including: a first semiconductor layer; an active layer disposed on the first semiconductor layer; a second semiconductor layer disposed on the active layer; and a protecting layer disposed on the second semiconductor layer, wherein the protecting layer has a region in which oxygen atomic percentages decrease toward the second semiconductor layer.

Abstract: A light-emitting device and a display device using the same. The light-emitting device improves the reliability of a process of disposing light-emitting devices. The light-emitting device is configured to ensure electrical connections even if the light-emitting device is inverted while being disposed on a substrate. The light-emitting device includes an n-type semiconductor layer and a p-type semiconductor layer. N-type electrodes and p-type electrodes are disposed on both sides of top and bottom surfaces of the light-emitting device. Contact holes are provided to electrically connect one of the n-type electrodes to the n-type semiconductor layer and one of the p-type electrodes to the p-type semiconductor layer. When the light-emitting device is inverted while being disposed on a substrate, the light-emitting device operates ordinarily, thereby reducing the defect rate of a display device.

Abstract: An organic light-emitting display apparatus includes a display substrate and a thin film encapsulation layer on the display substrate. The display substrate includes at least one hole, a thin film transistor, a light-emitting portion electrically connected to the thin film transistor, and a plurality of insulating layers. The light-emitting portion includes a first electrode, an intermediate layer, and a second electrode. The display substrate includes an active area, an inactive area between the active area and the hole, and a plurality of insulating dams. Each insulating dam includes at least one layer. The inactive area includes a first area different from a laser-etched area and a second laser-etched area.

Abstract: A display device includes: a substrate including a display area, a peripheral area, and a pad area, a plurality of pixels in the display area, and the peripheral area surrounding the display area; a plurality of fan-out lines extending from the pad area to the display area; a first metal layer covering at least a portion of the plurality of fan-out lines in the peripheral area; a second metal layer overlapping at least a portion of the first metal layer, the second metal layer being over the first metal layer; a third metal layer over the second metal layer in the peripheral area; a first insulating layer between the first metal layer and the second metal layer and including first contact holes; and a second insulating layer between the second metal layer and the third metal layer and including second contact holes.

Abstract: A device substrate comprising a substrate, a first pad, a second pad, a plurality of first power lines, a plurality of second power lines, and a plurality of control units is provided. The first pad is disposed on the first side of the device substrate. The second pad is disposed on the second side of the device substrate. The second side is opposite the first side. The first power lines are electrically connected to the first pad. The second power lines are electrically connected to the second pad. The control unit is electrically connected to at least one of the first power line and the second power line. The first pad does not overlap the second pad in a first direction perpendicular to the first side or in a second direction perpendicular to the second side. A display panel is also provided. A tiled display is also provided.

Abstract: A display device including a substrate having a first TFT of an oxide semiconductor and a second TFT of a polysilicon semiconductor comprising: the oxide semiconductor 109 is covered by a first insulating film, a first drain electrode 110 is connected to the oxide semiconductor 109 via a first through hole 132 formed in the first insulating film, a first source electrode 111 is connected to the oxide semiconductor 109 via second through hole 133 formed in the first insulating film in the first TFT, a second insulating film is formed covering the first drain electrode 110 and the first source electrode 111, a drain wiring connects 12 to the first drain electrode 110 via a third through hole 130 formed in the second insulating film, a source wiring 122 is connected to the first source electrode 111 via a fourth through hole 131 formed in the second insulating film.

Abstract: A radiation-emitting semiconductor chip is disclosed. In an embodiment, a radiation-emitting semiconductor chip includes a semiconductor body configured to generate radiation, a first contact layer having a first contact area for external electrical contacting the semiconductor chip and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area for external electrical contacting the semiconductor chip and a second contact finger structure connected to the second contact area, wherein the first contact finger structure and the second contact finger structure overlap in places, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer arranged in places between the connection layer and the current distribution layer, wherein the insulation layer has at least one opening.

Abstract: An LED package is disclosed. The LED package includes: a base including a chip mounting surface; an LED chip including a central axis line perpendicular to the chip mounting surface; a total internal reflection (TIR) lens having a refractive index higher than that of a medium covering the upper and side surfaces of the LED chip and including entrance planes bordering the medium and exit planes from which light entering through the entrance planes is emitted; and a reflector coupled to the TIR lens. The entrance planes include main entrance planes having one or more radii of curvature and protruding toward the LED chip and a pair of lateral entrance planes connected to the main entrance planes at the edges of the main entrance planes and extending downward from the main entrance planes.

Abstract: A semiconductor device according to an embodiment includes a substrate, first and second light emitting structures disposed on the substrate, a first reflective electrode disposed on the first light emitting structure, a second reflective electrode disposed on the second light emitting structure, a connection electrode, a first electrode pad, and a second electrode pad. According to the embodiment, the first light emitting structure includes a first semiconductor layer of a first conductivity type, a first active layer disposed on the first semiconductor layer, a second semiconductor layer of a second conductivity type and disposed on the first active layer, and a first through hole provided through the second semiconductor layer and the first active layer to expose the first semiconductor layer.

Abstract: The present invention relates to a nano-scale light emitting diode (LED) electrode assembly emitting polarized light, a method of manufacturing the same, and a polarized LED lamp having the same, and more particularly, to a nano-scale LED electrode assembly in which partially polarized light close to light that is linearly polarized having one direction is emitted as an emitted light when applying a driving voltage to the nano-scale LED electrode assembly and also nano-scale LED devices are connected to a nano-scale electrode without defects such as an electrical short circuit while maximizing a light extraction efficiency, a method of manufacturing the same, and a polarized LED lamp having the same.

Abstract: A display device can include a substrate on which a semiconductor element and a common electrode are disposed; a light emitting diode which is disposed on the substrate and includes an n-type layer, a light emitting layer, and a p-type layer; an insulating layer disposed on the substrate and the light emitting diode; and a first connecting electrode which is connected to the light emitting diode and the semiconductor element. Accordingly, it is possible to minimize defects which can be caused during a process of disposing the light emitting diode on the substrate.

Abstract: A light-emitting device includes: a semiconductor stacked body including: an n-type semiconductor layer having an n-side contact surface, a light-emitting layer located on a region of the n-type semiconductor layer surrounding the n-side contact surface in a top-view, and a p-type semiconductor layer provided on the light-emitting layer; an n-side electrode contacting the n-side contact surface; a p-side electrode located on and contacting the p-type semiconductor layer; and an insulating film opposing a side surface of the light-emitting layer; wherein a first gap portion is located between the insulating film and the side surface of the light-emitting layer such that the side surface of the light-emitting layer is exposed at the first gap portion.

Abstract: Provided is a stretchable display device. The stretchable display device includes a plurality of island substrates which defines a plurality of pixels and is spaced apart from each other, a lower substrate disposed below the plurality of island substrates and a connection line which electrically connects pads disposed on adjacent island substrates among the plurality of island substrates, wherein the upper substrate is made of a stretchable polymer material and includes a plurality of upper patterns overlapping an emission area of the plurality of island substrates and a second upper pattern in an area excluding the plurality of first upper patterns, and wherein the second upper pattern further includes a black pigment.

Abstract: A displaying apparatus including: a panel substrate; a plurality of light emitting devices arranged on the panel substrate; and at least one connection tip disposed on one surface of each of the light emitting devices. Each of the light emitting devices includes a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer interposed between the first and second conductivity type semiconductor layers; and first and second electrode pads disposed on the light emitting structure.

Abstract: A display device includes a substrate including a display area and a non-display area adjacent to the display area. The non-display area includes a blocking region. An organic layer is disposed on the substrate. An emission layer is disposed in the display area of the substrate. An auxiliary pattern is disposed in the blocking region of the non-display area of the substrate. A thin film encapsulation layer is disposed on the substrate and overlaps the emission layer and the blocking region. The organic layer has a groove penetrating an entire thickness of the organic layer in the blocking region. The auxiliary pattern overlaps the groove. The auxiliary pattern includes a same material as a gate electrode disposed in the display area of the substrate.

Abstract: A light emitting diode includes a first light emitting cell and a second light emitting cell comprising an n-type semiconductor layer, and a p-type semiconductor layer, respectively; reflection structures contacting the p-type semiconductor layers; a first contact layer in ohmic contact with the n-type semiconductor layer of the first light emitting cell; a second contact layer in ohmic contact with the n-type semiconductor layer of the second light emitting cell and connected to the reflection structure on the first light emitting cell. An n-electrode pad is connected to the first contact layer; and a p-electrode pad is connected to the reflection structure on the second light emitting cell. The first light emitting cell and the second light emitting cell are isolated from each other, and their outer side surfaces are inclined steeper than the inner sides. Therefore, a forward voltage may be lowered and light output may be improved.

Abstract: An LED light fixture is disclosed with an elongated housing that forms a open lower light channel and an upper light channel that is juxtaposed to the open lower light channel with electronics cavity or conduit positioned there between. The LED light fixture preferably has an elongated reflective insert that extends through the open lower light channel and creates a reflection channel from which the indirect and reflected light is emitted and a detachable cover structure that includes a diffusion lens and a removable baffle structure that attaches to side walls of the upper light channel.

Abstract: Provided is a light-emitting diode (LED) display unit group and a display panel. The LED display unit group includes a circuit board, and a pixel unit array located on the circuit board. The pixel unit array includes a plurality of pixel units arranged in n rows and m columns, n and m are both positive integers and greater than or equal to 2. Each of the pixel units includes multiple LED light-emitting chips of at least two colors, each of the LED light-emitting chips includes an electrode A and an electrode B of opposite polarities. The LED light-emitting chip of each of the pixel units includes at least one dual-electrode chip, the dual-electrode chip has the electrode A and the electrode B located on a same side of the dual-electrode chip. All dual-electrode chips in the plurality of pixel units of a same color have connecting lines from the electrode A to the electrode B directed in a same direction.

Abstract: The present invention relates to a light-emitting diode package comprising: a base having a seating surface; a light-emitting diode arranged on the seating surface; a lens arranged on the seating surface such that the lens covers the light-emitting diode; and a reflective part arranged on the seating surface such that the reflective part is spaced apart from the lens, and formed with a preset inclination angle (?), wherein the inclination angle (?) can be set according to a separation distance between the lens and the reflective part. Therefore, the light-emitting diode package can minimize a change in a beam angle and a field angle by comprising the reflective part formed with an inclination angle set as a predetermined angle according to the separation distance between the lens and the reflective part.

Abstract: The light emitting element includes: first and second light emitting cells each including an n-side semiconductor layer, an active layer and a p-side semiconductor layer; a first insulating film covering the first and second light emitting cells, and provided with first p-side and first n-side openings; a wiring electrode connected to the first light emitting cell at the first n-side opening, and connected to the second light emitting cell at the first p-side opening; a first electrode connected to the first light emitting cell; a second electrode connected to the second light emitting cell; a second insulating film provided with a second p-side opening formed above the first electrode, a second n-side opening formed above the second electrode, and a third opening formed above the wiring electrode; a first external connection portion connected to the first electrode; and a second external connection portion connected to the second electrode.

Abstract: A lamp for a vehicle includes an array module comprising a plurality of micro Light Emitting Diode (LED) chips that are arranged in one or more patterns and that are configured to generate light, where the array module has a shape that is concave in a first direction.

Abstract: A method for manufacturing a semiconductor device includes: forming a first metal portion on a substrate, the first metal portion comprising a plurality of pores; preparing a structure body comprising a semiconductor stacked body, wherein a concave portion is provided in a first surface of the structure body; and bonding the first metal portion to the structure body, such that a first part of the first metal portion is bonded to the concave portion of the first surface, and a second part of the first metal portion is bonded to a part of the first surface other than a location where the concave portion is provided. In bonding the first metal portion to the structure body, the first metal portion is bonded to the first surface such that at least a portion of the concave portion is filled with the first metal portion.

Abstract: A display panel and a manufacturing method thereof. The display panel includes a base substrate, and a pixel area and a non-pixel area on the substrate. The pixel area includes a light emitting element, the light emitting element including a first electrode, a light emitting layer, and a second electrode which are sequentially on the base substrate; the non-pixel area includes a first structural area, the first structural area including a conductive supporting block on one side of the light emitting layer close to the base substrate; the display panel further includes an electric connection layer which is on one side, which is away from the base substrate, of the light emitting element and the first structural area; the second electrode of the light emitting element is electrically connected with the electric connection layer, and is electrically connected with the conductive supporting block through the electric connection layer.

Abstract: A method for manufacturing a semiconductor device includes: forming a first metal portion on a substrate, the first metal portion comprising a plurality of pores; preparing a structure body comprising a semiconductor stacked body, wherein a concave portion is provided in a first surface of the structure body; and bonding the first metal portion to the structure body, such that a first part of the first metal portion is bonded to the concave portion of the first surface, and a second part of the first metal portion is bonded to a part of the first surface other than a location where the concave portion is provided. In bonding the first metal portion to the structure body, the first metal portion is bonded to the first surface such that at least a portion of the concave portion is filled with the first metal portion.

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment a method includes providing at least one light-emitting semiconductor chip comprising a sapphire substrate and an epitaxially grown layer sequence, arranging the light-emitting semiconductor chip with a side facing away from the sapphire substrate on a carrier, detaching the sapphire substrate from the semiconductor chip, applying a converter element on a region of the semiconductor chip in which the sapphire substrate was detached, arranging the semiconductor chip on an auxiliary carrier so that the converter element faces the auxiliary carrier and detaching the carrier from the semiconductor chip.

Abstract: A light-emitting device including at least one light-emitting unit, a wavelength conversion adhesive layer, and a reflective protecting element is provided. The light-emitting unit has an upper surface and a lower surface opposite to each other. The light-emitting unit includes two electrode pads, and the two electrode pads are located on the lower surface. The wavelength conversion adhesive layer is disposed on the upper surface. The wavelength conversion adhesive layer includes a low-concentration fluorescent layer and a high-concentration fluorescent layer. The high-concentration fluorescent layer is located between the low-concentration fluorescent layer and the light-emitting unit. The width of the high-concentration fluorescent layer is WH. The width of the low-concentration fluorescent layer is WL. The width of the light-emitting unit is WE. The light-emitting device further satisfies the following inequalities: WE<WL, WH<WL and 0.8<WH/WE?1.2.

Abstract: A display apparatus includes a substrate, a display area including a plurality of pixels, a non-display area outside the display area, a first dam surrounding the display area, a second dam surrounding the first dam, a third dam between the display area and the first dam. The third dam including a first insulating layer and a second insulating layer on the first insulating layer, and a thin film encapsulation layer covering the display area, the thin film encapsulation layer including at least one inorganic encapsulation layer and at least one organic encapsulation layer. The third dam includes a first region in which the second insulating layer is spaced along a direction in which the first insulating layer extends, and a second region in which the second insulating layer is continuously present along the direction in which the first insulating layer extends, the second region not overlapping the first region.

Abstract: The present disclosure discloses a light emitting diode (LED) package structure, a heat-dissipating substrate, a method for manufacturing an LED package structure, and a method for manufacturing a heat-dissipating substrate. The method for manufacturing the heat-dissipating substrate includes: providing a metal plate having a top surface and a bottom surface; implementing an etching process on the metal plate so as to form a first heat-dissipating block, a second heat-dissipating block, and a heat-dissipating plate spaced apart from each other; and filling an insulating material between the heat-dissipating plate and the first heat-dissipating block and between the heat-dissipating plate and the second heat-dissipating block so as to electrically isolate the heat-dissipating plate, the first heat-dissipating block, and the second heat-dissipating block from each other.

Abstract: An electronic device includes a first electronic module including a first electronic unit and a second electronic unit. The first electronic unit includes a plurality of first electronic elements arranged in a plurality of rows, wherein a top row of the plurality of first electronic elements defines a first base line. The second electronic unit includes a plurality of second electronic elements arranged in a plurality of rows, wherein a top row of the plurality of second electronic elements defines a second base line. A shifting distance S between the first base line and the second base line satisfies 0<S?(P1+P2)/4, wherein P1 is defined by two adjacent first electronic elements located in the top row and its adjacent row, and P2 is defined by two adjacent second electronic elements located in the top row and its adjacent row.

Abstract: A method for bending a GOA region of a flexible display panel is disclosed. The flexible display panel includes a substrate with an edge having a GOA bendable region. The method includes: an inflating assembly adheres to the GOA bendable region and a serving motor drives the inflating assembly to rotate and bend the GOA bendable region to the back surface of the substrate; and the inflating assembly inflates to press the GOA bendable region against the back surface of the substrate. A flexible display panel using the abovementioned method is also disclosed.

Abstract: An active device array substrate includes: a substrate, a switch device, an inter-layer dielectric layer, an insulation bump, a conductive layer, and a pixel electrode. The switch device is located on the substrate. The inter-layer dielectric layer is located on the switch device, and the inter-layer dielectric layer has at least one opening, where the opening does not cover at least one part of a drain electrode of the switch device. The insulation bump covers at least partially the opening. The conductive layer is located on a top surface and a side wall of the insulation bump, and is electrically connected to the drain electrode of the switch device through the opening. The pixel electrode is electrically connected to the conductive layer.