Abstract: A light-emitting device of an embodiment of the present application comprises light-emitting units; a transparent structure having cavities configured to accommodate at least one of the light-emitting units; and a conductive element connecting at least two of the light-emitting units.

Abstract: A compact LED module and a method of manufacturing such an LED module are provided. The LED module includes a first-pole first lead, a first-pole second lead, a first-pole third lead, a second-pole first lead, a second-pole second lead, a second-pole third lead, a first LED chip, a second LED chip, a third LED chip, and a housing. A distal end of the first-pole first lead is offset toward a second-pole side in a first direction with respect to both a distal end of the second-pole second lead and a distal end of the second-pole third lead.

Abstract: Disclosed are an organic electroluminescent device and a preparation method thereof. The organic electroluminescent device comprises an anode, a hole transport layer, an organic light-emitting layer, an electron transport layer and a cathode. An organic metal complex and an active metal compound are doped in the electron transport layer, wherein the active metal compound is an alkali metal complex, an alkali earth metal complex or a lanthanide metal compound. The preparation method thereof includes the following steps: etching an anode pattern, and evaporating a hole transport layer and an organic light-emitting layer on an ITO glass substrate in order; and co-evaporate an electron transport material, an organic metal complex and an active metal compound to form an electron transport layer; and evaporating a cathode on the electron transport layer.

Abstract: An LED light emitting device with good color mixing property is provided. The LED light emitting device including a rectangular substrate having a short-side and a long-side and a first LED element, a second LED element and a third LED element that are mounted on a surface of the substrate and emit light with wavelengths different from one another, wherein the first LED element and the second LED element are mounted on the substrate so that a first distance from the short-side to a mounting position of the first LED element in the long-side direction of the substrate and a second distance from the short-side to a mounting position of the second LED element in the long-side direction are the same.

Abstract: Provided are a semiconductor laser diode and a method for fabricating the same. The semiconductor laser diode includes a c-plane substrate, a group III nitride layer disposed on the c-plane substrate, and a first semiconductor layer, an active layer, and a second semiconductor layer disposed on the group III nitride layer in the stated order, wherein each of the first semiconductor layer and the second semiconductor layer is exposed to the outside of the semiconductor laser diode.

Abstract: A semiconductor light-emitting device includes a light-emitting member that includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer, a first metal layer electrically connected to the first semiconductor layer, and a second metal layer electrically connected to the second semiconductor layer. The light-emitting member has a first surface including a front surface of the first semiconductor layer, a second surface including a front surface of the second semiconductor layer, a side surface including an outer periphery of the first semiconductor layer, and a recess extending inwardly of the second surface to an interior portion of the first semiconductor layer to expose an inner surface on a side of the recess facing the side surface.

Abstract: An organic electroluminescent device and a manufacturing method thereof, a display apparatus are provided. The organic electroluminescent device includes a plurality of pixel units in an array form. Each of the pixel units includes a light emitting region and a transparent region, and each of the pixel units includes: a base substrate (1); a thin film transistor switch (2); a planarizing layer (3), a first electrode (4), a pixel defining layer (5), an organic layer (6) and a second electrode (7), disposed at a side of the thin film transistor switch (2) facing away from the base substrate (1) in this order. The first electrode (4) is positioned in the light emitting region (A) of the pixel unit; and at least one of the planarizing layer (3) and the pixel defining layer (5) is only disposed within the light emitting region (A) of the pixel unit. With the above organic electroluminescent device, transmittance of the transmissive region of each pixel unit is enhanced.

Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a sealing member configured to cover a lower surface of the semiconductor layer and a side surface of the semiconductor layer to protrude to be higher than an upper surface of the semiconductor layer at a side of the semiconductor layer, a fluorescer layer provided above the semiconductor layer and the sealing member, and an insulating film provided between the sealing member and the semiconductor layer and between the sealing member and the fluorescer layer. A corner of a protruding portion of the sealing member is rounded.

Abstract: An optoelectronic component includes a housing that includes a rectangular basic shape with four sides. The sides each merge into one another at a corner point. At least two carrier arms of two contact elements of a lead frame are guided to an edge of the housing. The two carrier arms are arranged on different sides of the housing. The two carrier arms are each at different spacings from the two corner points of the side on which the carrier arms are arranged. The spacings differ at least in the width of a carrier arm.

Abstract: A compact LED module and a method of manufacturing such an LED module are provided. The LED module includes a first-pole first lead, a first-pole second lead, a first-pole third lead, a second-pole first lead, a second-pole second lead, a second-pole third lead, a first LED chip, a second LED chip, a third LED chip, and a housing. A distal end of the first-pole first lead is offset toward a second-pole side in a first direction with respect to both a distal end of the second-pole second lead and a distal end of the second-pole third lead.

Abstract: A display device including a substrate including a wiring electrode; a conductive adhesive layer including an anisotropic conductive medium, and disposed to cover the wiring electrode; and a plurality of semiconductor light emitting devices adhered to the conductive adhesive layer and electrically connected to the wiring electrode through the anisotropic conductive medium. Further, the conductive adhesive layer includes a first layer disposed on the substrate; a second layer deposited on the first layer and including the anisotropic conductive medium; and a third layer deposited on the second layer, to which the semiconductor light emitting devices are adhered. Further, at least one of the second layer and the third layer includes a white pigment configured to reflect light emitted by the semiconductor light emitting device.

Abstract: A light emitting device includes: a first lead including a first base portion having a constant thickness and a first small-thickness portion having a thickness smaller than that of the first base portion; a second lead including a second base portion having a constant thickness and a second small-thickness portion having a thickness smaller than that of the second base portion; wherein the first small-thickness portion and the second small-thickness portion face each other with a gap interposed therebetween; the length of the gap is 0.9 to 1.2 times the thickness of the edges of the first small-thickness portion and the second small-thickness portion; the length of the bonding wire in a plan view of the light emitting device is smaller than a value obtained by adding the thickness of the base portion, a width of a mounting-disabled area, and a width of a bonding-disabled area.

Abstract: An inorganic-light-emitter display includes a display substrate and a plurality of spatially separated inorganic light emitters distributed on the display substrate in a light-emitter layer. A light-absorbing layer located on the display substrate in the light-emitter layer is in contact with the inorganic light emitters. Among other things, the disclosed technology provides improved angular image quality by avoiding parallax between the light emitters and the light-absorbing material, increased light-output efficiency by removing the light-absorbing material from the optical path, improved contrast by increasing the light-absorbing area of the display substrate, and a reduced manufacturing cost in a mechanically and environmentally robust structure using micro transfer printing.

Abstract: A III-N semiconductor channel is compositionally graded between a transition layer and a III-N polarization layer. In embodiments, a gate stack is deposited over sidewalls of a fin including the graded III-N semiconductor channel allowing for formation of a transport channel in the III-N semiconductor channel adjacent to at least both sidewall surfaces in response to a gate bias voltage. In embodiments, a gate stack is deposited completely around a nanowire including a III-N semiconductor channel compositionally graded to enable formation of a transport channel in the III-N semiconductor channel adjacent to both the polarization layer and the transition layer in response to a gate bias voltage.

Abstract: A light emitting device includes a substrate, an electrode connection layer, an epitaxial structure and a plurality of pads. The substrate has an upper surface, a lower surface and a plurality of conductive through holes. The electrode connection layer is disposed on the upper surface of the substrate and has at least one first electrode, at least one second electrode and a connection layer which has at least one buffer region. The epitaxial structure is disposed on the electrode connection layer and electrically connected to the electrode connection layer. The pads are disposed on the lower surface of the substrate and connect with the conductive through holes.

Abstract: Embodiments of the invention include a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A metal n-contact is connected to the n-type region. A metal p-contact is in direct contact with the p-type region. An interconnect is electrically connected to one of the n-contact and the p-contact. The interconnect is disposed adjacent to the semiconductor structure.

Abstract: A metal plate 1 to be a lead frame has a plating with Sn or Zn or a plating with various alloys containing these metals only on the side faces and half-etched faces 6, and a noble metal plating layer formed on the front surface as a surface on which a semiconductor device is to be mounted.

Abstract: A display device comprises a display panel having a display area, in which a plurality of pixels and at least one power line for supplying power to the pixels are formed, and a non-display area outside the display area; and a cover disposed over the display panel so as to cover the display area of the display panel. The cover comprises at least one electrically conductive portion coupled to the at least one power line and configured to receive at least one power supply voltage via the non-display area and supply the at least one power supply voltage to the at least one power line in the display area.

Abstract: Exemplary embodiments provide a light emitting diode and a method for manufacturing the same. The light emitting diode includes a light emitting structure, a plurality of holes formed through a second conductive type semiconductor layer and an active layer such that a first conductive type semiconductor layer is partially exposed therethrough, and a first electrode and a second electrode electrically connected to the first conductive type semiconductor layer and the second conductive type semiconductor layer, respectively, while being insulated from each other. The second electrode includes openings corresponding to the plurality of holes, a plurality of unit electrode layers separated from each other, and at least one connection layer electrically connecting at least two unit electrode layers to each other. The first electrode forms ohmic contact with the first conductive type semiconductor layer through the plurality of holes and partially covers the light emitting structure.

Abstract: Each of a plurality of semiconductor light-emitting element has, on an upper surface thereof that has a quadrilateral shape, a pair of connecting portions having different polarities from each other. The pair of connecting portions are aligned on a diagonal of the quadrilateral shape. The diagonal intersects a row direction along which the semiconductor light-emitting elements within a row are arranged. Connecting portions having identical polarity are positioned on an imaginary line parallel to the row direction. Metal wires intersect two sides extending from a corner, on the diagonal, of the upper surface of each of the semiconductor light-emitting elements when viewed from a direction perpendicular to a mounting surface of a substrate for mounting the semiconductor light-emitting elements.

Abstract: A method of producing a semiconductor component includes providing an optoelectronic semiconductor chip; applying a molding compound for an optical element, wherein the molding compound is based on a highly refractive polymer material; precuring the molding compound at a temperature of at most 50° C.; and curing the molding compound.

Abstract: A carrier array adapted for carrying a plurality of chips is provided. The carrier array includes a lead frame, controllers and first packages. The lead frame includes a frame body and a plurality of lead frame units. The lead frame units are connected with each other through the frame body and arranged in an array. Each of the lead frame units includes at least one first pin connected with the frame body and a plurality of second pins not connected with the frame body. The controllers are disposed on the lead frame units, and electrically connected with the corresponding lead frame units, respectively. Each of the first packages is disposed on the lead frame, and respectively has an opening to expose a portion region of the corresponding lead frame unit, and the openings are adapted for accommodating the chips. A light emitting diode package is also provided.

Abstract: An optoelectronic device including a semiconductor substrate having a face, light-emitting diodes arranged on the face and including wired conical or frustoconical semiconductor elements, and an at least partially transparent dielectric layer covering the light-emitting diodes, the refractive index of the dielectric layer being between 1.6 et 1.8.

Abstract: A nano-structured light-emitting device including a first semiconductor layer; a nano structure formed on the first semiconductor layer. The nano structure includes a nanocore, and an active layer and a second semiconductor layer that are formed on a surface of the nanocore, and of which the surface is planarized. A conductive layer surrounds sides of the nano structure, a first electrode is electrically connected to the first semiconductor layer and a second electrode is electrically connected to the conductive layer.

Abstract: A nanowire device and a method of forming a nanowire device that is poised for pick up and transfer to a receiving substrate are described. In an embodiment, the nanowire device includes a base layer and a plurality of nanowires on and protruding away from a first surface of the base layer. An encapsulation material laterally surrounds the plurality of nanowires in the nanowire device, such that the nanowires are embedded within the encapsulation material.

Abstract: An optical electrical device comprises a base and a transparent conductive structure on the base is disclosed. The base further comprises a light-emitting device and the transparent conductive structure comprises a transparent conductive oxide layer and a passivation layer on the transparent conductive oxide layer. The material of the transparent conductive oxide layer comprises transparent conductive metal oxide, such as ZnO. Furthermore, the transparent conductive metal oxide also comprises impurities, such as a carrier e.g. gallium.

Abstract: Disclosed herein is a light emitting device. The light emitting device is provided to include a light emitting structure, a first electrode pad, a second electrode pad and a heat dissipation pad, and a substrate on which the light emitting diode is mounted. The substrate includes a base; an insulation pattern formed on the base; and a conductive pattern disposed on the insulation pattern. The base includes a post and a groove separating the post from the conductive pattern. An upper surface of the post is placed lower than an upper surface of the conductive pattern, the heat dissipation pad contacts the upper surface of the post, and the first electrode pad and the second electrode pad contact the conductive pattern. With this structure, the light emitting device has excellent properties in terms of electrical stability and heat dissipation efficiency.

Abstract: A light-emitting device (100) includes a housing (20) including a light-transmitting section (25), a surface light-emitting element (10) including a rectangular light-emitting section (R10) facing the light-transmitting section (25) and a non-light-emitting section formed outside the light-emitting section (R10), and an electronic device (31). The non-light-emitting section includes a flexible outer edge section (R13) provided with an electrode on a surface. The outer edge section (R13) is bent in a direction away from a light-emitting surface (S1) of the light-emitting section (R10) together with the electrode. The electrode electrically connects the light-emitting section (R10) and the electronic device (31).

Abstract: A compact LED module and a method of manufacturing such an LED module are provided. The LED module includes a first-pole first lead, a first-pole second lead, a first-pole third lead, a second-pole first lead, a second-pole second lead, a second-pole third lead, a first LED chip, a second LED chip, a third LED chip, and a housing. A distal end of the first-pole first lead is offset toward a second-pole side in a first direction with respect to both a distal end of the second-pole second lead and a distal end of the second-pole third lead.

Abstract: Disclosed is a light emitting device. The light emitting device includes a body, first and second metal layers on a top surface of the body, a heat radiation plate disposed between the first and second metal layers and having a circular outline, a plurality of light emitting parts on the heat radiation plate, first and second bonding regions disposed on the first and second metal layers and electrically connected with the light emitting parts, and a molding member disposed on the heat radiation plate to cover the light emitting parts. Each of the light emitting parts includes a plurality of light emitting chips connected with each other, and a plurality of wires to electrically connect the light emitting chips with the first and second bonding regions, and the wires of each light emitting part are arranged a radial direction about a central of the heat radiation plate.

Abstract: A light-emitting device comprises a light-emitting stack comprising a first surface and a second surface opposite to the first surface; a first electrode formed on the second surface of the light-emitting stack; a current blocking layer formed on the first surface of the light-emitting stack and corresponding to a location of the first electrode; and a second electrode covering the current blocking layer and comprising a plurality of first metal layers and a plurality of second metal layers alternating with the plurality of first metal layers, wherein the plurality of first metal layers is discontinuous.

Abstract: Embodiments of the present invention disclose an array substrate comprising a plurality of pixel units disposed on a base substrate, the pixel units comprising: a thin film transistor structure formed on the base substrate; and an OLED driven by the thin film transistor structure, the OLED disposed in a pixel region of the pixel units, the OLED comprising sequentially in a direction away from the base substrate a first electrode which is transparent, a light-emitting layer and a second electrode which reflects light; a transflective layer disposed between the OLED and the thin film transistor structure; a color filter disposed between the second electrode of the OLED and the transflective layer; the second electrode of the OLED and the transflective layer constitute a microcavity structure.

Abstract: A method of fabricating a pixelated projector display includes providing a wafer with a supporting substrate, a first semiconductive layer, an emission layer, and a second semiconductive layer. The wafer is patterned into an array of LEDs/LDs and a planarization layer is deposited over the array. One via for each LED/LD element is formed through the planarization layer. A MOTFT backplane is positioned on the planarization layer, one driver circuit in controlling electrical communication with each via through the planarization layer. A passivation layer is deposited over the MOTFT backplane and heat plugs are extended through the passivation layer, the MOTFT backplane, the planarization layer, and the III-V LED/LD wafer partially through the first semiconductive layer to thermally couple heat from the array of LEDs/LDs to the surface of the passivation layer. An upper end of the heat plugs is accessible for thermal coupling to a heat spreader and/or a heatsink.

Abstract: A method of manufacturing a semiconductor laser according to an aspect of the present invention includes (a) sequentially epitaxially growing a first cladding layer, an active layer and a second cladding layer on a semiconductor substrate composed of InP or GaAs and having a plane index of (100), (b) forming a plurality of growth start surfaces having a plane index greater than (100) in an upper surface of the second cladding layer, and (c) epitaxially growing a third cladding layer containing zinc in the plurality of growth start surfaces of the second cladding layer.

Abstract: A flexible light sheet lamp includes a thin substrate and an array of printed microscopic vertical LEDs (VLEDs) sandwiched between a transparent first conductor layer and a transparent second conductor layer. The light sheet has a light exit surface. The VLEDs have one surface, facing the light exit surface of the light sheet, covered with a reflective metal. A phosphor layer is provided such that the semi-transparent VLED layer is between the phosphor layer and the light exit surface. A reflector layer is provided such that the phosphor layer is between the reflector layer and the VLED layer. The substrate may form the light exit surface or the light exit surface may be the opposite side of the light sheet. Some VLED light passing through the phosphor layer is reflected by the reflector layer and re-enters the phosphor layer. Therefore, less phosphor is needed to achieve the desired conversion ratio.

Abstract: A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a first electrode layer, a light emitting layer, a second semiconductor layer, a third semiconductor layer and a second electrode layer. The first electrode layer includes a metal portion having a plurality of opening portions. The opening portions penetrate the metal portion and have an equivalent circle diameter of a shape of the opening portions. The light emitting layer is between the first semiconductor layer and the first electrode layer. The second semiconductor layer of a second conductivity type is between the light emitting layer and the first electrode layer. The third semiconductor layer of a second conductivity type is between the second semiconductor layer and the first electrode layer. The second electrode layer is connected to the first semiconductor layer.

Abstract: A flip chip package structure includes a package base and a LED chip. The package base includes a first substrate, a first and a second electrodes disposed on the first substrate and a bonding layer disposed on the first substrate. The LED chip is flipped on the package base and includes an epitaxy layer, a third and a fourth electrodes disposed on the epitaxy layer and contacting the first and the second electrodes, a second insulating layer disposed between the third and the fourth electrodes, and a plurality of bonding pillars disposed on the second insulating layer and contacting the bonding layer. A minimum interval between the bonding layer, the first and the second electrodes and a minimum interval between the bonding pillars, the second and the third electrodes are larger than a width of each bonding pillar.

Abstract: Disclosed is an LED-based luminaire (10, 110, 210, 310, 410, 510, 610, 710) including an optic surrounding a plurality of LEDs (140, 240, 340, 440, 540, 640a/b, 740). The optic may include a plurality of interior reflective surfaces for mixing light output of the LEDs and also include a transmissive diffuser (30, 130, 230, 330, 430, 530, 630a/b, 730a/b) through which interiorly reflected light output of the LEDs exits the LED-based luminaire.

Abstract: A method for producing optoelectronic components including A) providing a growth substrate with a semiconductor layer arranged thereon that produces a zone which is active during operation, B) applying separating structures on the semiconductor layer, C) applying a multiplicity of copper layers on the semiconductor layer in regions delimited by the separating structures, D) removing the separating structures, E) applying, a protective layer at least on lateral areas of copper layers, F) applying an auxiliary substrate on the copper layers, G) removing the growth substrate, H) singulating a composite assembly comprising the semiconductor layer, the copper layers and the auxiliary substrate to form components which are separated from one another.

Abstract: Disclosed herein is a light emitting device exhibiting improved current spreading. The disclosed light emitting device includes a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type and second conductivity type semiconductor layers, a first electrode disposed on the first conductivity type semiconductor layer, and a second electrode disposed on the second conductivity type semiconductor layer. The light emitting structure includes a mesa etching region where the second conductivity type semiconductor layer, active layer, and first conductivity type semiconductor layer are partially etched, thereby exposing a portion of the first conductivity type semiconductor layer. The first electrode is disposed on the exposed portion of the first conductivity type semiconductor layer.

Abstract: A light emitting device has a base comprising at least one pair of leads having a silver-containing layer on their surfaces and being secured by a resin molded body, a light emitting element mounted on said leads, a protective film made of an inorganic material that covers the upper surface of said base, and a sealing resin disposed on the base surface via said protective film. The sealing resin has a first resin that covers said light emitting element, and a second resin having a higher hardness than said first resin that covers the boundaries between said resin molded body and said leads.

Abstract: The invention relates to a lighting (1) device comprising a light source (2) and a wavelength converting element (7), which comprises a phosphor compounded with a polymer. The phosphor contains a metal-ion activator which is excitable via a partially forbidden electronic transition. The phosphor and the polymer being chosen such that the difference in their refractive index is smaller than 0.1. Due to this choice, scattering in the wavelength converting element (7) remains at minimum. Interesting wavelength converting elements (7) are obtained when using phosphors comprising specific Mn(IV)-activated fluoride compounds and specific fluorine-containing polymers.

Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a fluorescent material layer and a scattering layer. The semiconductor layer has a first surface and a second surface on an opposite side to the first surface and includes a light emitting layer. The p-side electrode and the n-side electrode are provided on the semiconductor layer on a side of the second surface. The fluorescent material layer is provided on a side of the first surface and includes a plurality of fluorescent materials and a first bonding material. The first bonding material integrates the fluorescent materials. The scattering layer is provided on the fluorescent material layer and includes scattering materials and a second bonding material. The scattering materials are configured to scatter radiated light of the light emitting layer. The second bonding material integrates the scattering materials.

Abstract: A semiconductor light-emitting device has a first principal surface, a second principal surface formed on a side opposite to the first principal surface, and a light-emitting layer. A p-electrode on the second principal surface is in the region of the light-emitting layer and surrounds an n-electrode. An insulating layer on the side of the semiconductor layer surrounds the p-and the n-electrodes. A p-metal pillar creates an electrical connection for the p-electrode, and an n-metal pillar creates an electrical connection for the n-electrode. A resin layer surrounds the end portions of the p-and the n-metal pillars, and also covers the side surface of the semiconductor layer, the second principal surface, the p-electrode, the n-electrode, the insulating layer, the p-metal pillar and the n-metal pillar.

Abstract: A light emitting device includes an electrically conductive member provided with a reflective film; a light emitting element mounted on the reflective film; and a protective film continuously covering a surface of the light emitting element and a surface of the reflective film. A thickness of the protective film on the reflective film in a vicinity of the light emitting element is substantially equal to a thickness of the protective film on the reflective film in the region except for the vicinity of the light emitting element.

Abstract: Solid state lighting (“SSL”) devices with improved contacts and associated methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The SSL device also includes a contact on one of the first or second semiconductor materials. The contact includes a first conductive material and a plurality of contact elements in contact with one of the first or second conductive materials. The contact elements individually include a portion of a second conductive material that is different from the first conductive material.

Abstract: The present disclosure relates to a semiconductor light-emitting device, which includes: a first semiconductor layer having first conductivity; a second semiconductor layer having second conductivity different from the first conductivity; an active layer disposed between the first semiconductor layer and the second semiconductor layer and generating light by recombination of electrons and holes; a first pad electrode electrically connected to the second semiconductor layer; a high-resistance body partially disposed on the second semiconductor layer; and a branch electrode disposed on the second semiconductor layer, partially extending over the high-resistance body, and electrically connected to the first pad electrode.

Abstract: Disclosed herein, in certain instances, is a novel photovoltaic cell that uses unique micro-architectural and multi-layer functional designs. Further disclosed herein, in certain instances, is a 3-dimensional electrode. Disclosed herein, in certain instances, is a novel electroluminescent cell that uses unique micro-architectural and multi-layer functional designs. Further disclosed herein, in certain instances, is a 3-dimensional diode.

Abstract: A microarray-type nitride light emitting device includes a light emitting semiconductor layer; and a multilayered transparent contact layer to divide a plane of the light emitting semiconductor layer into a plurality of microarray-type light emitting regions and a plurality of connect-divided light emitting regions. The multilayered transparent contact layer includes a first transparent contact layer that is composed of a material having a resistance value which is heat determinable, and that divides the plane of the light emitting semiconductor layer into the plurality of microarray-type light emitting regions; a transparent resistor layer that is defined within the first transparent contact layer, that is composed of the material having a resistance value which is heat determinable and has a resistance that is higher than that of the first transparent contact layer; and a second transparent contact layer to connect the plurality of microarray-type light emitting regions.

Abstract: Pixels of a display device include a first substrate, an organic insulation layer disposed on the first substrate and having an upper surface formed in an uneven structure, an inorganic insulation layer disposed on the organic insulation layer and formed in the uneven structure, a first electrode disposed on the inorganic insulation layer and formed in the uneven structure, and a device to provide a data voltage to the first electrode, in which the first electrode includes a reflective electrode to reflect incident light.