Abstract: Embodiments provide a semiconductor light emitting device which comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, and a plurality of third semiconductor structures spaced apart on the second conductive semiconductor layer.

Abstract: A light emitting device includes a light emitting element, including a substrate including group III nitride compound semiconductor, a luminous layer structure including group III nitride compound semiconductor, the luminous layer structure formed on a first surface of the substrate, and an irregular surface formed on a second surface of the substrate, the second surface including a principal light emission surface, and a translucent sealing member for sealing the light emitting element, the translucent sealing member being separated from the second surface. At least one of translucent gel material and an inert gas is filled between the light emitting element and the translucent sealing member.

Abstract: A light-emitting device that includes an LED and a light extraction layer and the method for making the same are disclosed. The LED includes a substrate on which an active layer is sandwiched between a p-type layer and an n-type layer, the active layer generating light in a band of wavelengths about a central wavelength when holes and electrons recombine therein. The n-type layer, active layer, and p-type layer are formed on the substrate. First and second electrodes for providing a potential difference between the p-type layer and the n-type layer are included in the LED. The light extraction layer includes a clear layer of material having a first surface in contact with a surface of the LED and a second surface having light scattering features with dimensions greater than 0.5 times the central wavelength. The material of the clear layer can be polycrystalline or amorphous.

Abstract: An improved light emitting heterostructure and/or device is provided, which includes a contact layer having a contact shape comprising one of: a clover shape with at least a third order axis of symmetry or an H-shape. The use of these shapes can provide one or more improved operating characteristics for the light emitting devices. The contact shapes can be used, for example, with contact layers on nitride-based devices that emit light having a wavelength in at least one of: the blue spectrum or the deep ultraviolet (UV) spectrum.

Abstract: Embodiments of the present invention provide separate optical devices operable to couple to a separate LED, the separate optical device comprising an entrance surface to receive light from a separate LED when the separate optical device is coupled to the separate LED, an exit surface opposite from and a distance from the entrance surface and a set of sidewalls. The exit surface can have at least a minimum area necessary to conserve brightness for a desired half-angle of light projected from the separate optical device. Furthermore, each sidewall is positioned and shaped so that rays having a straight transmission path from the entrance surface to that sidewall reflect to the exit surface with an angle of incidence at the exit surface at less than or equal to a critical angle at the exit surface.

Abstract: A light emitting device includes a transparent substrate having first and second surfaces, a semiconductor layer provided on the first surface, a first light emission layer provided on the semiconductor layer and emitting first ultraviolet light including a wavelength corresponding to an energy larger than a forbidden bandwidth of a semiconductor of the semiconductor layer, a second light emission layer provided between the first light emission layer and the semiconductor layer, absorbing the first ultraviolet light emitted from the first light emission layer, and emitting second ultraviolet light including a wavelength corresponding to an energy smaller than the forbidden bandwidth of the semiconductor of the semiconductor layer, and first and second electrodes provided to apply electric power to the first light emission layer.

Abstract: Disclosed are a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a substrate, in which concave-convex patterns are in at least a portion of a backside of the substrate, and a light emitting structure on the substrate and comprising a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer.

Abstract: Methods of forming a light emitting device include selectively forming a wavelength conversion structure on a light emitting element using stereolithography. Selectively forming the wavelength conversion structure may include covering the light emitting element with a photo-curable liquid polymer containing a luminescent material, and exposing the liquid polymer to light for a time sufficient to at least partially cure the liquid polymer. Multiple layers of polymer can be selectively built up to form a wavelength conversion structure having a custom shape on the light emitting element.

Abstract: A semiconductor device includes a substrate comprising a first surface having a [111] orientation and a second surface having a second orientation and a plurality of III-V nitride layers on the substrate, wherein the plurality of III-V nitride layers are configured to emit light when an electric current is produced in one or more of the plurality of III-V nitride layers.

Abstract: A semiconductor light emitting device can include a casing having a concave-shaped cavity with an opening, a semiconductor light emitting element installed in a bottom portion of the cavity, and a resin layer for filling an interior of the cavity. The resin layer can include a wavelength conversion material, and can be formed in a convex shape in a light radiation direction of the light emitting element. In the resin layer a layer with a high density of the wavelength conversion material can be formed near a surface of the convex shape.

Abstract: A light emitting diode structure and a light emitting diode structure forming method are provided. The light emitting diode structure includes a base, a diode chip, and a package lens. The diode chip is mounted on the base. The package lens covers the diode chip. The surface of the package lens includes a plurality of dot structures. The steps of the method include mounting a light-emitting diode chip on a base, assembling a package lens to cover the light emitting diodes chip, and forming a plurality of dot structures on the surface of the package lens.

Abstract: An (Al, Ga, In)N light emitting diode (LED), wherein light extraction from chip and/or phosphor conversion layer is optimized. By novel shaping of LED and package optics, a high efficiency light emitting diode is achieved.

Abstract: A light source is provided comprising an LED component having an emitting surface, which may comprise: i) an LED capable of emitting light at a first wavelength; and ii) a re-emitting semiconductor construction which comprises a second potential well not located within a pn junction having an emitting surface; or which may alternately comprise a first potential well located within a pn junction and a second potential well not located within a pn junction; and which additionally comprises a converging optical element.

Abstract: An apparatus comprising a structure comprising a group III-nitride and a junction between n-type and p-type group III-nitride therein, the structure having a pyramidal shape or a wedge shape.

Abstract: An optoelectronic component having a basic housing or frame and at least one semiconductor chip, specifically a radiation-emitting or-receiving semiconductor chip, in a cavity of the basic housing. In order to increase the efficiency of the optoelectronic component, reflectors are provided in the cavity in the region around the semiconductor chip. These reflectors are formed by virtue of the fact that a filling compound filled at least partly into the cavity is provided, the material and the quantity of the filling compound being chosen in such a way that the filling compound, on account of the adhesion force between the filling compound and the basic housing, assumes a form which widens essentially conically from bottom to top in the cavity, and the conical inner areas of the filling compound serve as reflector.

Abstract: An object of the present invention is to provide a gallium nitride-based compound semiconductor light emitting device having superior light extraction efficiency and light distribution uniformity. The inventive gallium nitride-based compound semiconductor light emitting device comprises a substrate and a gallium nitride-based compound semiconductor layer stacked on the substrate, wherein on at least one lateral surface of the light emitting device, the bottom (substrate side) of the semiconductor layer is a reverse taper inclined 5 to 85 degrees relative to the substrate main surface and the top of the semiconductor layer is a forward taper inclined 95 to 175 degrees relative to the substrate main surface.

Abstract: A radiation-emitting thin-film semiconductor component with a multilayer structure (12) based on GaN, which contains an active, radiation-generating layer (14) and has a first main area (16) and a second main area (18)—remote from the first main area—for coupling out the radiation generated in the active, radiation-generating layer. Furthermore, the first main area (16) of the multilayer structure (12) is coupled to a reflective layer or interface, and the region (22) of the multilayer structure that adjoins the second main area (18) of the multilayer structure is patterned one- or two-dimensionally.

Abstract: A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.

Abstract: The present invention discloses a method of manufacturing a solar cell by forming two electrode layers on the same side of a wafer, and avoiding sunlight incident to another side from being blocked by the electrode layers to enhance the photoelectric conversion efficiency, and each electrode layer is formed by using a mask layer to perform a vapor deposition process, without requiring any mask lithography or etching process. Of course, the issue of a high-temperature process that deteriorates the quality of the wafer no longer exists.

Abstract: A light emitting element according to an embodiment of the invention includes a semiconductor substrate, a light emitting part having a first conductivity type first cladding layer; a second conductivity type second cladding layer different from the first cladding layer in the conductivity type and an active layer sandwiched between the first cladding layer and the second cladding layer, a reflecting part for reflecting a light emitted from the active layer, disposed between the semiconductor substrate and the light emitting part so as to have a thickness of 1.7 ?m to 8.

Abstract: A denticulated Group III nitride structure that is useful for growing AlxGa1-xN to greater thicknesses without cracking and with a greatly reduced threading dislocation (TD) density.

Abstract: A light emitting diode array in which, when viewed from the above, the shape of an almost square light emitting diode is square-chamfered or round-chamfered at the corners thereof in order to minimize light leakage at a reverse mesa surface to allow an electrode layer to surround the three directions of a light emitting unit, and part in the vicinity of the corner of the reverse mesa surface is extended up to a substrate unit to cover it. Accordingly, the light emitting diode array minimized in light leakage at the reverse mesa surface can be provided.

Abstract: A radiation-emitting device includes a nanowire that is structurally and electrically coupled to a first electrode and a second electrode. The nanowire includes a double-heterostructure semiconductor device configured to emit electromagnetic radiation when a voltage is applied between the electrodes. A device includes a nanowire having an active longitudinal segment selectively disposed at a predetermined location within a resonant cavity that is configured to resonate at least one wavelength of electromagnetic radiation emitted by the segment within a range extending from about 300 nanometers to about 2,000 nanometers. Active nanoparticles are precisely positioned in resonant cavities by growing segments of nanowires at known growth rates for selected amounts of time.

Abstract: A light emitting device according to the embodiment includes a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, a current spreading layer on the second conductive semiconductor layer, a bonding layer on the current spreading layer, and a light extracting structure on the bonding layer.

Abstract: An epitaxial wafer, a light-emitting element, a method of fabricating the epitaxial wafer and a method of fabricating the light-emitting element, which have a high output and a low forward voltage, and can be fabricated without increasing fabricating cost, are provided.

Abstract: A nitride semiconductor light-emitting device wherein a substrate or nitride semiconductor layer has a defect concentration region and a low defect density region other than the defect concentration region. A portion including the defect concentration region of the nitride semiconductor layer or substrate has a trench region deeper than the low defect density region. Thus by digging the trench in the defect concentration region, the growth detection is uniformized, and the surface planarity is improved. The uniformity of the characteristic in the wafer surface leads to improvement of the yield.

Abstract: A nitride semiconductor laser device uses a substrate with low defect density, contains reduced strains inside a nitride semiconductor film, and thus offers a satisfactorily long useful life. On a GaN substrate (10) with a defect density as low as 106 cm?2 or less, a stripe-shaped depressed portion (16) is formed by etching. On this substrate (10), a nitride semiconductor film (11) is grown, and a laser stripe (12) is formed off the area right above the depressed portion (16). With this structure, the laser stripe (12) is free from strains, and the semiconductor laser device offers a long useful life. Moreover, the nitride semiconductor film (11) develops reduced cracks, resulting in a greatly increased yield rate.

Abstract: An organic electroluminescent display device and a method of preparing the same are provided. The organic electroluminescent display device may include a first electrode formed on a substrate. A second electrode may be formed so as to be insulated from the first electrode. One or more organic layers may be interposed between the first electrode and the second electrode and include at least an emission layer. A protective layer may be formed so as to cover the second electrode. The protective layer may have a surface roughness (rms) of about 5 ? to about 50 ?. The organic electroluminescent display device including a protective layer having a low surface roughness may benefit from superior lifespan characteristics.

Abstract: Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1-x1-y1)N (where 0?x1?1, 0?y1?1, and 0?x1+y1?1), a multiple quantum well-structured active layer made of undoped InAGa1-AN (where 0<A<1) formed on the n-type clad layer, and a p-type clad layer formed on the active layer wherein the p-type clad layer includes at least a first layer made of p-type Iny2Ga1-y2N (where 0?y2<1) formed on the active layer and a second layer made of p-type Alx3Iny3Ga(1-x3-y3)N (where 0<x3?1, 0?y3?1, and 0<x3+y3?1) formed on the first layer.

Abstract: The present invention relates to a light emitting device having nano structures for light extraction and a method for manufacturing the same, nano structures comprising nano rods, nano agglomerations, nano recesses, nano patterns with nano line widths, nano through-holes or a combination thereof, formed on a light emitting surface of a light emitting device, thereby enhancing the light extraction efficiency of the device.

Abstract: A semiconductor light emitting device or a semiconductor device produced using a nitride type III-V group compound semiconductor substrate on which a plurality of second regions made of a crystal having a second average dislocation density are regularly arranged in a first region made of a crystal having a first average dislocation density so as to produce the structured substrate, the second average dislocation density being greater than the first average dislocation density, a light emitting region of the semiconductor light emitting device or an active region of the semiconductor device is formed in such a manner that it does not pass through any one of the second regions.

Abstract: The disclosed subject matter provides a composite semiconductor device which can include a common substrate, a first semiconductor light emitting structure, and a second semiconductor light emitting structure. The first semiconductor light emitting structure can include an epitaxial grown layer containing a light emitting layer formed on part of the common substrate either directly or via a bonding layer. The second semiconductor light emitting structure can be provided in a notch at at least one location to which the epitaxial grown layer is not bonded, or in a recess formed in the notch at one location. The disclosed subject matter also provides a method of manufacturing a composite semiconductor device having the above-described and other structures.

Abstract: A semiconductor device includes a semiconductor chip having electrode pads, and a rewiring pattern having interconnects which are connected to the electrode pads and extend over an insulation film. The semiconductor device also includes columnar electrodes each of which has a main body section and a protrusion section, and a sealing section which has a top face having a height the same as the top faces of the protrusion sections. The semiconductor device also includes solder balls formed on the protrusion sections. The semiconductor device also has trenches in the sealing section. Each trench has a depth which reaches the boundary between the main body and protrusion of the electrode. The side faces of the protrusion section are exposed face defined by the trenches. Each solder ball is electrically connected to the top face and side faces of the protrusion section of each electrode.

Abstract: An optical lens refracts and reflects a light to increase a luminance in a top direction of the optical lens and to decrease a luminance in a horizontal direction of the optical lens. The optical lens includes a central portion and a peripheral portion. The central portion has a convex shape. The peripheral portion has a concave shape. The peripheral portion surrounds the central portion. Therefore, a power consumption and a manufacturing cost are decreased.

Abstract: A semiconductor light emitting device includes a substrate, and a light emitting portion that is disposed on the substrate, and includes an active layer formed of a group III nitride semiconductor using a nonpolar plane or a semipolar plane as a growth principal surface, in which side end surfaces of the active layer are specular surfaces.

Abstract: The present invention is a method of fabricating a waveguide using a sacrificial spacer layer. The first step in this process is to fabricate the underlying optical semiconductor structure. A trench is then etched in this structure resulting in an underlying L-shaped structure. A sacrificial spacer layer is deposited in the trench. The waveguide is created in the trench on the sacrificial spacer layer using a mask layer to angle the vertex of the L-shaped structure. User-defined portions of the sacrificial spacer layer are subsequently removed to create air gaps between the waveguide and the sidewalls of the trench in the optical semiconductor.

Abstract: The present invention is a method of fabricating a waveguide using a sacrificial spacer layer. The first step in this process is to fabricate the underlying optical semiconductor structure. A trench is then etched in this structure resulting in an underlying L-shaped structure. A sacrificial spacer layer is deposited in the trench. The waveguide is created in the trench on the sacrificial spacer layer using a mask layer to angle the vertex of the L-shaped structure. User-defined portions of the sacrificial spacer layer are subsequently removed to create air gaps between the waveguide and the sidewalls of the trench in the optical semiconductor.

Abstract: A high luminous flux warm white solid state lighting device with a high color rendering is disclosed. The device comprising two groups of semiconductor light emitting components to emit and excite four narrow-band spectrums of lights at high luminous efficacy, wherein the semiconductor light emitting components are directly mounted on a thermal effective dissipation member; a mixing cavity for blending the multi-spectrum of lights; a back-transferred light recycling member deposited on top of an LED driver and around the semiconductor light emitters; and a diffusive member to diffuse the mixture of output light from the solid state lighting device. The solid state lighting device produces a warm white light with luminous efficacy at least 80 lumens per watt and a color rendering index at least 85 for any lighting application.

Abstract: The present invention relates to an AC light emitting diode. An object of the present invention is to provide an AC light emitting diode wherein various designs for enhancement of the intensity of light, prevention of flickering of light or the like become possible, while coming out of a unified method of always using only one metal wire with respect to one electrode when electrodes of adjacent light emitting cells are connected through metal wires. To this end, the present invention provides an AC light emitting diode comprising a substrate; bonding pads positioned on the substrate; a plurality of light emitting cells arranged in a matrix form on the substrate; and a wiring means electrically connecting the bonding pads and the plurality of light emitting cells, wherein the wiring means includes a plurality of metal wires connecting an electrode of one of the light emitting cells with electrodes of other electrodes adjacent to the one of the light emitting cells.

Abstract: This invention provides an optoelectronic semiconductor device having a rough surface and the manufacturing method thereof. The optoelectronic semiconductor device comprises a semiconductor stack having a rough surface and an electrode layer overlaying the semiconductor stack. The rough surface comprises a first region having a first topography and a second region having a second topography. The method comprises the steps of forming a semiconductor stack on a substrate, forming an electrode layer on the semiconductor stack, thermal treating the semiconductor stack, and wet etching the surface of the semiconductor stack to form a rough surface.

Abstract: A magnetic random access memory (MRAM) device includes a magnetic tunnel junction (MTJ) stack formed over a lower wiring level, a hardmask formed on the MTJ stack, and an upper wiring level formed over the hardmask. The upper wiring level includes a slot via bitline formed therein, the slot via bitline in contact with the hardmask and in contact with an etch stop layer partially surrounding sidewalls of the hardmask.

Abstract: An nitride semiconductor device according to the present invention is a nitride semiconductor device including: an n-GaN substrate 10; a semiconductor multilayer structure 100 formed on a principal face of the n-GaN substrate 10, the semiconductor multilayer structure 100 including a p-type region and an n-type region; a p-side electrode 32 which is in contact with a portion of the p-type region included in the semiconductor multilayer structure 100; and an n-side electrode 34 provided on the rear face of the n-GaN substrate 10. The rear face of the n-GaN substrate includes a nitrogen surface, such that a carbon concentration at an interface between the rear face and the n-side electrode 34 is adjusted to 5 atom % or less.

Abstract: A light emitting diode (LED) having a vertical structure and a method for fabricating the same. The light emitting diode (LED) having a vertical structure includes a support layer; a first electrode formed on the support layer; a plurality of semiconductor layers formed on the first electrode; a conductive semiconductor layer formed on the plurality of semiconductor layer and provided with an outer surface having a tilt angle of a designated degree; and a second electrode formed on the conductive semiconductor layer.

Abstract: A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.

Abstract: A solid-state light source includes at least one stack of light emitting elements. The elements are an inorganic light emitting diode chip and at least one wavelength conversion chip or the elements are a plurality of light emitting diode chips and one or more optional wavelength conversion chips. The wavelength conversion chip may include an electrical interconnection means. The light emitting diode chip may include at least one GaN-based semiconductor layer that is at least ten microns thick and that is fabricated by hydride vapor phase epitaxy. A method is described for fabricating the solid-state light source.

Abstract: A semiconductor lamp having a light-emitting semiconductor device, the semiconductor device comprising a carrier and at least one light-emitting semiconductor component on the carrier, and a heatsink. The heatsink has a first main face, the semiconductor device is located adjacent to the first main face, and the carrier faces the first main face. The semiconductor device is thermally coupled to the heatsink, and the heatsink has at least one feedthrough for electrical connection of the semiconductor device.

Abstract: An LED assembly includes a substrate and a plurality of LEDs mounted on the substrate. Each LED comprises an LED die, a base supporting the LED die thereon and thermally contacting the substrate to take heat generated by the LED die to the substrate, a pair of leads electrically connecting the LED die to input a current to the LED die, and an encapsulant enveloping the LED die. The pair of leads hover above the substrate to separate an electrical route of the LED assembly from a heat conducting pathway thereof. Furthermore, each LED has a plurality of legs extending radially from the base thereof to fit in the base of an adjacent LED, to thereby engagingly lock with the adjacent LED.

Abstract: An optoelectronic component having a basic housing or frame and at least one semiconductor chip, specifically a radiation-emitting or-receiving semiconductor chip, in a cavity of the basic housing. In order to increase the efficiency of the optoelectronic component, reflectors are provided in the cavity in the region around the semiconductor chip. These reflectors are formed by virtue of the fact that a filling compound filled at least partly into the cavity is provided, the material and the quantity of the filling compound being chosen in such a way that the filling compound, on account of the adhesion force between the filling compound and the basic housing, assumes a form which widens essentially conically from bottom to top in the cavity, and the conical inner areas of the filling compound serve as reflector.

Abstract: A light-emitting device, including a compound semiconductor layer disposed on a substrate, includes a light-emitting layer, and a dielectric constant change structure formed in a part of the compound semiconductor layer including a main surface as a light extraction surface of the compound semiconductor layer. The dielectric constant change structure is devoid of revolution symmetry provided by randomly changing a periodicity of a dielectric constant in a two-dimensional lattice pattern, with respect to a photonic crystal structure in which more than two kinds of materials having different dielectric constants are periodically and alternately disposed on the main surface in the two-dimensional lattice pattern.

Abstract: A light emitting diode is disclosed that includes a support structure and a Group III nitride light emitting active structure mesa on the support structure. The mesa has its sidewalls along an indexed crystal plane of the Group III nitride. A method of forming the diode is also disclosed that includes the steps of removing a substrate from a Group III nitride light emitting structure that includes a sub-mount structure on the Group III nitride light emitting structure opposite the substrate, and thereafter etching the surface of the Group III nitride from which the substrate has been removed with an anisotropic etch to develop crystal facets on the surface in which the facets are along an index plane of the Group III nitride. The method can also include etching the light emitting structure with an anisotropic etch to form a mesa with edges along an index plane of the Group III nitride.