Abstract: The present invention relates to an OLED display, and an OLED display according to an exemplary embodiment of the present invention includes a substrate member, an OLED including a first electrode formed on the substrate member, an organic emission layer formed on the first electrode, and a second electrode formed on the organic emission layer, and a cover layer formed on the second electrode and covering the OLED. The cover layer includes a cover main body and a corner-cube pattern formed on an opposite side of a side that faces the second electrode among both sides of the cover main body.

Abstract: An epitaxial wafer, a light-emitting element, a method of fabricating the epitaxial wafer and a method of fabricating the light-emitting element, which have a high output and a low forward voltage, and can be fabricated without increasing fabricating cost, are provided.

Abstract: An LED array chip (2), which is one type of a semiconductor light emitting device, includes an array of LEDs (6), a base substrate (4) supporting the array of the LEDs (6), and a phosphor film (48). The array of LEDs (6) is formed by dividing a multilayer epitaxial structure including a light emitting layer into a plurality of portions. The phosphor film (48) covers an upper surface of the array of the LEDs (6) and a part of every side surface of the array of LEDs (6). Here, the part extends from the upper surface to the light emitting layer.

Abstract: A lighting device including an LED chip having a light emitting surface, and being configured to emit a light from the light emitting surface, a mounting substrate being configured to mount the LED chip, a first color conversion member including a first light transmissive material and a first phosphor, the first phosphor being excited by the light which is emitted from the LED chip, thereby giving off a first light having a wavelength which is longer than a wavelength of the light emitted from the LED chip, the first color conversion member being directly disposed on the light emitting surface of the LED chip, a second color conversion member including a second light transmissive material and a second phosphor, the second phosphor being excited by the light which is emitted from the LED chip, thereby giving off a second light having a wavelength which is longer than the wavelength of the light emitted from the LED chip, the second color conversion member being shaped to have a dome-shape, wherein the LED chip

Abstract: A method of fabricating an optoelectronic device, comprising growing an active layer of the device on an oblique surface of a suitable material, wherein the oblique surface comprises a facetted surface. The present invention also discloses a method of fabricating the facetted surfaces. One fabrication process comprises growing an epitaxial layer on a suitable material, etching the epitaxial layer through a mask to form the facets having a specific crystal orientation, and depositing one or more active layers on the facets. Another method comprises growing a layer of material using a lateral overgrowth technique to produce a facetted surface, and depositing one or more active layers on the facetted surfaces. The facetted surfaces are typically semipolar planes.

Abstract: The present invention relates to a compound semiconductor substrate and a method for manufacturing the same. The present invention provides the manufacturing method which coats spherical balls on a substrate, forms a metal layer between the spherical balls, removes the spherical balls to form openings, and grows a compound semiconductor layer from the openings. According to the present invention, the manufacturing method can be simplified and grow a high quality compound semiconductor layer rapidly, simply and inexpensively, as compared with a conventional ELO (Epitaxial Lateral Overgrowth) method or a method for forming a compound semiconductor layer on a metal layer. And, the metal layer serves as one electrode of a light emitting device and a light reflecting film to provide a light emitting device having reduced power consumption and high light emitting efficiency.

Abstract: Surface-textured encapsulations for use with light emitting diodes. In an aspect, a light emitting diode apparatus is provided that includes a light emitting diode, and an encapsulation formed upon the light emitting diode and having a surface texture configured to extract light. In an aspect, a method includes encapsulating a light emitting diode with an encapsulation having a surface texture configured to extract light. In an aspect, a light emitting diode lamp is provided that includes a package, at least one light emitting diode disposed within the package, and an encapsulation formed upon the at least one light emitting diode having a surface texture configured to extract light. In another aspect, a method includes determining one or more regions of an encapsulation, the encapsulation configured to cover a light emitting diode, and surface-texturing each region of the encapsulation with one or more geometric features that are configured to extract light.

Abstract: A light emitting device package is provided. The light emitting device package comprises a package body comprising a first cavity, and a second cavity connected to the first cavity; a first lead electrode, at least a portion of which is disposed within the second cavity; a second lead electrode, at least a portion of which is disposed within the first cavity; a light emitting device disposed within the second cavity; a first wire disposed within the second cavity, the first wire electrically connecting the light emitting device to the first lead electrode; and a second wire electrically connecting the light emitting device to the second lead electrode.

Abstract: A device includes a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region and a plurality of layer pairs disposed within one of the n-type region and the p-type region. Each layer pair includes an InGaN layer and pit-filling layer in direct contact with the InGaN layer. The pit-filling layer may fill in pits formed in the InGaN layer.

Abstract: Certain embodiments provide a semiconductor light emitting device including: a first metal layer; a stack film including a p-type nitride semiconductor layer, an active layer, and an n-type nitride semiconductor layer; an n-electrode; a second metal layer; and a protection film protecting an outer circumferential region of the upper face of the n-type nitride semiconductor layer, side faces of the stack film, a region of an upper face of the second metal layer other than a region in contact with the p-type nitride semiconductor layer, and a region of an upper face of the first metal layer other than a region in contact with the second metal layer. Concavities and convexities are formed in a region of the upper face of the n-type nitride semiconductor layer, the region being outside the region in which the n-electrode is provided and being outside the regions covered with the protection film.

Abstract: A packaged light emitting device (LED) includes a light emitting diode configured to emit primary light having a peak wavelength that is less than about 465 nm and having a shoulder emission component at a wavelength that is greater than the peak wavelength, and a wavelength conversion material configured to receive the primary light emitted by the light emitting diode and to responsively emit light having a color point with a ccx greater than about 0.4 and a ccy less than about 0.6.

Abstract: A method for fabricating a III-nitride semiconductor film, comprising depositing or growing a III-nitride semiconductor film in a semiconductor light absorbing or light emitting device structure; and growing a textured or structured surface of the III-nitride nitride semiconductor film in situ with the growing or the deposition of the III-nitride semiconductor film, by controlling the growing of the III-nitride semiconductor film to obtain a texture of the textured surface, or one or more structures of the structured surface, that increase output power of light from the light emitting device, or increase absorption of light in the light absorbing device.

Abstract: In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.

Abstract: A light emitting device comprises a flip-chip light emitting diode (LED) die mounted on a submount. The top surface of the submount has a reflective layer. Over the LED die is molded a hemispherical first transparent layer. A low index of refraction layer is then provided over the first transparent layer to provide TIR of phosphor light. A hemispherical phosphor layer is then provided over the low index layer. A lens is then molded over the phosphor layer. The reflection achieved by the reflective submount layer, combined with the TIR at the interface of the high index phosphor layer and the underlying low index layer, greatly improves the efficiency of the lamp. Other material may be used. The low index layer may be an air gap or a molded layer. Instead of a low index layer, a distributed Bragg reflector may be sputtered over the first transparent layer.

Abstract: A light emitting diode chip includes a thermal conductive substrate, an epi-layer, a thin-type ohmic contacting film, a transparent conducting layer, and an electrode pad. The epi-layer includes a p-type semiconductor layer, an n-type semiconductor layer, and an active layer. The n-type semiconductor layer includes a stepped surface at a side thereof facing away from the substrate, and the stepped surface includes a central portion and a peripheral portion surrounding the central portion. The n-type semiconductor layer has a thickness decreasing along directions from a center thereof to opposite lateral peripheries thereof. The ohmic contacting film is arranged on the stepped surface. The conducting layer is arranged on the ohmic contacting film. The electrode pad is arranged on the conducting layer and located corresponding to the central portion of the stepped surface.

Abstract: An optical element package includes: an optical element in a form of a chip, and a lens resin having a convex lens surface covering an optical functional surface of the optical element. The convex lens surface is formed as a rough surface having a plurality of minute convex curved surfaces having a vertex in a direction perpendicular to a plane in contact with each part of the convex lens surface.

Abstract: A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.

Abstract: A light emitting device package comprises: a substrate; first and second conduction members on the substrate; a light emitting diode on the substrate, the light emitting diode being electrically connected with the first and second conduction members; and a phosphor layer on the light emitting diode.

Abstract: A submount for a semiconductor light emitting device includes a semiconductor substrate having a cavity therein configured to receive the light emitting device. A first bond pad is positioned in the cavity to couple to a first node of a light emitting device received in the cavity. A second bond pad is positioned in the cavity to couple to a second node of a light emitting device positioned therein. Light emitting devices including a solid wavelength conversion member and methods for forming the same are also provided.

Abstract: A semiconductor device having light-emitting diodes (LEDs) formed on a concave textured substrate is provided. A substrate is patterned and etched to form recesses. A separation layer is formed along the bottom of the recesses. An LED structure is formed along the sidewalls and, optionally, along the surface of the substrate between adjacent recesses. In these embodiments, the surface area of the LED structure is increased as compared to a planar surface. In another embodiment, the LED structure is formed within the recesses such that the bottom contact layer is non-conformal to the topology of the recesses. In these embodiments, the recesses in a silicon substrate result in a cubic structure in the bottom contact layer, such as an n-GaN layer, which has a non-polar characteristic and exhibits higher external quantum efficiency.

Abstract: A circuit structure includes a substrate and a film over the substrate and including a plurality of portions allocated as a plurality of rows. Each of the plurality of rows of the plurality of portions includes a plurality of convex portions and a plurality of concave portions. In each of the plurality of rows, the plurality of convex portions and the plurality of concave portions are allocated in an alternating pattern.

Abstract: A light emitting device is provided that includes a substrate, a light emitting unit formed on the substrate, and an encapsulation unit. The encapsulation unit may include a first region corresponding to the light emitting unit and a second region coalesced with the substrate. The encapsulation unit of the first region or a part of the encapsulation unit of the first region may have a positive curvature.

Abstract: An (Al,Ga,In)N-based light emitting diode (LED), comprising a p-type surface of the LED bonded with a transparent submount material to increase light extraction at the p-type surface, wherein the LED is a substrateless membrane.

Abstract: An LED unit includes an LED and a lens mounted on the LED. The lens includes a light-incident face adjacent to the LED, a light-emergent face remote from the LED, and a light-reflecting face between the light-incident face and the light-emergent face. The light-incident face includes a first light-incident face facing the LED, and the light-emergent face includes a first light-emergent face located opposite to the first light-incident face. The first light-incident face is a continuously curved face which has a curvature, along a bottom-to-top direction of the lens, firstly decreasing gradually to a first value; then increasing gradually to a second value; then decreasing gradually again to a third value; and then increasing gradually again. The light-emergent face has a first light-emergent face located above the first light-incident face and having a varied curvature.

Abstract: An optical lens refracts and reflects a light to increase a luminance in a top direction of the optical lens and to decrease a luminance in a horizontal direction of the optical lens. The optical lens includes a central portion and a peripheral portion. The central portion has a convex shape. The peripheral portion has a concave shape. The peripheral portion surrounds the central portion. Therefore, power consumption and manufacturing cost are decreased.

Abstract: A substrate has at least one recess and/or protrusion formed in and/or on a surface thereof so as to scatter or diffract light generated in an active layer. The recess and/or protrusion is formed in such a shape that can reduce crystalline defects in semiconductor layers.

Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a plurality of compound semiconductor layers including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a dot type conductive layer on the compound semiconductor layers; and an electrode layer on the dot type conductive layer.

Abstract: A nitride light emitting device includes a first conduction type cladding layer, an active layer, and a second conduction type cladding layer that are stacked on a substrate. The second conduction type cladding layer has an uneven shape including at least one concave and/or convex portion.

Abstract: A light emitting diode module having improved luminous efficiency is provided. The light emitting diode module includes: a light emitting chip; a phosphor layer formed of phosphor materials emitting light having a wavelength longer than the light emitted from the light emitting chip using light emitted from the light emitting chip as an excitation source; and a reflection plate that is disposed between the light emitting chip and the phosphor layer and that reflects the light emitted by the phosphor layer.

Abstract: A semiconductor light emitting device including: a substrate; an electrode layer; and a semiconductor multilayer film disposed between the substrate and the electrode layer, the semiconductor multilayer film including: an n-type semiconductor layer; a p-type semiconductor layer; and an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein the semiconductor multilayer film has a light extraction surface from which a light emitted in the semiconductor multilayer film is extracted, the light extraction surface being formed with a relief structure having nano-scaled convex portions, wherein the relief structure is formed to have variation in equivalent circular diameters of the convex portions, and wherein 90% or more of the convex portions in the relief structure are configured to have circularity coefficient of (4?×(area)/(circumferential length)2) being equal to or larger than 0.7.

Abstract: A nitride semiconductor light emitting diode according to the present invention, includes: a substrate; a buffer layer formed on the substrate; an In-doped GaN layer formed on the buffer layer; a first electrode layer formed on the In-doped GaN layer; an InxGa1?xN layer formed on the first electrode layer; an active layer formed on the InxGa1?xN layer; a first P—GaN layer formed on the active layer; a second electrode layer formed on the first P—GaN layer; a second P—GaN layer partially protruded on the second electrode layer; and a third electrode formed on the second P—GaN layer.

Abstract: In some embodiments, a memory cell includes a transistor gate spaced from a channel region by gate dielectric; a source region on one side of the channel region; and a drain region on an opposing side of the channel region from the source region. The channel region has phase change material adjacent the drain region. In some embodiments, the phase change material may be adjacent both the source region and the drain region. Some embodiments include methods of programming a memory cell that has phase change material adjacent a drain region. An inversion layer is formed within the channel region adjacent the gate dielectric, with the inversion layer having a pinch-off region within the phase change material adjacent the drain region. Hot carriers (for instance, electrons) within the pinch-off region are utilized to change a phase within the phase change material.

Abstract: Surface-textured encapsulations for use with light emitting diodes. In an aspect, a light emitting diode apparatus is provided that includes a light emitting diode, and an encapsulation formed upon the light emitting diode and having a surface texture configured to extract light. In an aspect, a method includes encapsulating a light emitting diode with an encapsulation having a surface texture configured to extract light. In an aspect, a light emitting diode lamp is provided that includes a package, at least one light emitting diode disposed within the package, and an encapsulation formed upon the at least one light emitting diode having a surface texture configured to extract light. In another aspect, a method includes determining one or more regions of an encapsulation, the encapsulation configured to cover a light emitting diode, and surface-texturing each region of the encapsulation with one or more geometric features that are configured to extract light.

Abstract: A plurality of light-emitting panel units in a large-area light-emitting apparatus are arranged to make joints between the light-emitting panel units unobtrusive. A display panel unit includes a flexible substrate having a flat portion having an extended portion formed on each side thereof, a light-emitting portion formed on one surface of the substrate to extend to the extended portion, and an electrode terminal formed at an end portion of the extended portion of the substrate. The extended portion of the substrate is curved together with the light-emitting portion to connect the light-emitting portions of adjacent light-emitting panel units.

Abstract: A semiconductor light emitting device and a method of manufacturing the semiconductor light emitting device are provided. The semiconductor light emitting device comprises a substrate having a top surface that is curved to protrude, and a light emitting structure that is curved to protrude on the substrate and comprises an active layer.

Abstract: The present invention discloses a III-nitride compound semiconductor light emitting device including an active layer for generating light by recombination of an electron and a hole between an n-type nitride compound semiconductor layer and a p-type nitride compound semiconductor layer. The active layer is disposed over the n-type nitride compound semiconductor layer. The III-nitride compound semiconductor light emitting device includes a masking film made of MgN and grown on the p-type nitride compound semiconductor layer, and at least one nitride compound semiconductor layer grown after the growth of the masking film made of MgN.

Abstract: A light emitting device includes a substrate provided with a conductor wiring, a light emitting element mounted on the substrate and a light reflecting resin member configured and arranged to reflect light emitted from the light emitting element. The light emitting device also includes at least one of an electrically conductive wire electrically connecting the conductor wiring and the light emitting element, an exposed region of the substrate on which the conductor wiring is not disposed, and a protective element mounted on the conductor wiring. At least a part of the electrically conductive wire, the exposed region or the protective element is buried in the light reflecting resin member.

Abstract: The present invention provides a method of fabricating a light emitting diode, which comprises the steps of forming a compound semiconductor layer on a substrate, the compound semiconductor layer including a lower semiconductor layer, an active layer and an upper semiconductor layer; and scratching a surface of the substrate by rubbing the substrate with an abrasive. According to the present invention, the abrasive is used to rub and scratch the surface of the light emitting diode, thereby making it possible to cause the light emitted from the active layer to effectively exit to the outside. Therefore, the light extraction efficiency of the light emitting diode can be improved.

Abstract: A nitride semiconductor light-emitting device includes a layered portion emitting light on a substrate. The layered portion includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The periphery of the layered portion is inclined, and the surface of the n-type semiconductor layer is exposed at the periphery. An n electrode is disposed on the exposed surface of the n-type semiconductor layer. This device structure can enhance the emission efficiency and the light extraction efficiency.

Abstract: A nitride semiconductor laser device uses a substrate with low defect density, contains reduced strains inside a nitride semiconductor film, and thus offers a satisfactorily long useful life. On a GaN substrate (10) with a defect density as low as 106 cm?2 or less, a stripe-shaped depressed portion (16) is formed by etching. On this substrate (10), a nitride semiconductor film (11) is grown, and a laser stripe (12) is formed off the area right above the depressed portion (16). With this structure, the laser stripe (12) is free from strains, and the semiconductor laser device offers a long useful life. Moreover, the nitride semiconductor film (11) develops reduced cracks, resulting in a greatly increased yield rate.

Abstract: An optoelectronic semiconductor component includes a basic body, at least one semiconductor chip arranged thereon, and an encapsulation embedding the at least one semiconductor chip and composed of a radiation-transmissive material with scattering particles. A radiation-transmissive covering layer with an absorber is applied to the encapsulation.

Abstract: An (Al, Ga, In)N light emitting diode (LED) in which multi-directional light can be extracted from one or more surfaces of the LED before entering a shaped optical element and subsequently being extracted to air. In particular, the (Al, Ga, In)N and transparent contact layers (such as ITO or ZnO) are embedded in or combined with a shaped optical element comprising an epoxy, glass, silicon or other material molded into an inverted cone shape, wherein most of the light entering the inverted cone shape lies within a critical angle and is extracted. In addition, the present invention stands the LED on end, i.e., rotates the position of the LED within the shaped optical element by approximately 90° as compared to a conventional LED, in order to extract light more effectively from the LED.

Abstract: An exemplary color mixing light emitting diode (LED) device includes a substrate, LED dies, an encapsulating body, and a light mixing structure. The substrate has a main surface. The LED dies are arranged adjacent the main surface of the substrate. The light mixing structure is arranged adjacent an outer portion of the main surface of the substrate, around the LED dies. The encapsulating body encapsulates the LED dies and the light mixing structure. The light mixing structure is made of light transmissive material, and the light mixing structure has light scattering particles doped therein.

Abstract: In accordance with the invention, a light source for display and/or illumination is provided, the light source comprising a heterostructure including semiconductor layers, the heterostructure forming a waveguide between a first end and a second end, the heterostructure comprising a plurality of layers and comprising an optically active zone formed by the plurality of layers, the optically active zone capable of emitting light guided by said waveguide, at least two different radiative transitions being excitable in the optically active an electrical current between a p-side electrode and an n-side electrode, transition energies of said at least two different radiative transitions corresponding to wavelengths in the visible part of the optical spectrum, the light source further comprising means for preventing reflections of light from the waveguide by at least one of said first and second end back into the waveguide, thereby causing the light source to comprise a superluminescent light emitting diode.

Abstract: A light emitting diode is disclosed that includes an active structure, a first ohmic contact on the active structure, and a transparent conductive oxide layer on the active structure opposite the first ohmic contact. The transparent conductive oxide layer has a larger footprint than said active structure. A dielectric mirror is positioned on the transparent conductive oxide layer opposite said active structure and a second contact is positioned on the transparent conductive oxide layer opposite the dielectric mirror and separated from the active structure.

Abstract: There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed on the substrate, wherein the substrate is provided on a surface thereof with a pattern having a plurality of convex portions, wherein out of the plurality of convex portions of the pattern, a distance between a first convex portion and an adjacent one of the convex portions is different from a distance between a second convex portion and an adjacent one of the convex portions.

Abstract: The present invention relates to a light emitting diode with enhanced luminance and light emitting performance due to increase in efficiency of current diffusion into an ITO layer, and a method of fabricating the light emitting diode. According to the present invention, there is manufactured at least one light emitting cell including an N-type semiconductor layer, an active layer and a P-type semiconductor layer on a substrate. The method of the present invention comprises the steps of (a) forming at least one light emitting cell with an ITO layer formed on a top surface of the P-type semiconductor layer; (b) forming a contact groove for wiring connection in the ITO layer through dry etching; and (c) filling the contact groove with a contact connection portion made of a conductive material for the wiring connection.

Abstract: A light emitting device is provided which includes a substrate, a first semiconductor layer having a first region and a second region on the substrate; ac active layer is formed on the first region of the first semiconductor layer; a second semiconductor layer is formed on the active surface layer and the portion surface of the second semiconductor layer is a rough surface; a plurality of pillar structures with a hollow structure, and both of the outer surface and inner surface of the pillar structures are rough surface; a transparent conductive layer is formed to cover the plurality of pillar structures; a first electrode is formed on the transparent conductive layer; and a second electrode is formed on the second region of the first semiconductor layer.

Abstract: An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED) combined with a shaped plastic optical element, in which the directional light from the ZnO cone, or from any high refractive index material in contact with the LED surface, entering the shaped plastic optical element is extracted to air.

Abstract: A lens-attached light-emitting element having an improved optical availability efficiency includes a composite lens provided on an approximately U-shaped light-emitting area of the light emitting element array. Four spherical lenses are arranged in such a manner that each is centered in the neighborhood the an end of a respective one of three segments of a U-shaped polygonal line corresponding to positions where light emitted by the U-shaped light-emitting area is a maximum Three cylindrical lens are arranged between two of the spherical lens, respectively, each cylindrical lens having an axis parallel with each segment. These four spherical lenses and three cylindrical lenses together constitute the composite lens. The light-emitting element further comprises an antireflection film covering the light-emitting area, and the composite lens is formed on the surface of the antireflection film.