Abstract: A Group III nitride semiconductor light-emitting device having a stacked structure includes a transparent crystal substrate having a front surface and a back surface, a first Group III nitride semiconductor layer of first conductive type formed on the front surface of the transparent crystal substrate, a second Group III nitride semiconductor layer of second conductive type which is opposite from the first conductive type, a light-emitting layer made of a Group III nitride semiconductor between the first and second Group III nitride semiconductor layers, and a plate body including fluorescent material, attached onto the back surface of the transparent crystal substrate.

Abstract: A semiconductor light emitting device is composed of a blue light emitting diode, a red light emitting layer grown epitaxially on the blue light emitting diode, and an insulating material containing a YAG fluorescent material. The red light emitting layer is made of, e.g., undoped In0.4Ga0.6N having a forbidden band width of 1.9 eV and formed on a p-type semiconductor layer to have a configuration consisting of a plurality of mutually spaced-apart islands.

Abstract: A light-emitting diode array includes a substrate, an adhesive layer formed on the substrate, and a plurality of electrically connected epitaxial light-emitting stack layer disposed on the adhesive layer. Each of the epitaxial light-emitting stack layer has a P-contact and an N-contact coplanar to the P-contact. The light-emitting diode array has improved heat ventilation characteristics.

Abstract: A light-emitting device 100 has ITO transparent electrode layers 8, 10 used for applying drive voltage for light-emission to a light-emitting layer section 24, and is designed so as to extract light from the light-emitting layer section 24 through the ITO transparent electrode layers 8, 10. The light-emitting device 100 also has contact layers composed of In-containing GaAs, formed between the light-emitting layer section 24 and the ITO transparent electrode layers 8, 10, so as to contact with the ITO transparent electrode layers respectively. The contact layers 7, 9 are formed by annealing a stack 13 obtained by forming GaAs layers 7?, 9? on the light-emitting layer section, and by forming the ITO transparent electrode layers 8, 10 so as to contact with the GaAs layers 7?, 9?, to thereby allow In to diffuse from the ITO transparent electrode layers 8, 10 into the GaAs layers 7?, 9?.

Abstract: The present invention discloses a light emitting diode (LED) element and a method for fabricating the same, which can promote light extraction efficiency of LED, wherein a substrate is etched to obtain basins with inclined natural crystal planes, and an LED epitaxial structure is selectively formed inside the basin. Thereby, an LED element having several inclines is obtained. Via the inclines, the probability of total internal reflection is reduced, and the light extraction efficiency of LED is promoted.

Abstract: The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer. Next, the substrate is etched to form a plurality of concave zones and a plurality of convex zones with the chemical reaction layer overhead. Next, the chemical reaction layer is removed to form an irregular geometry of the concave zones and convex zones on the surface of the substrate. Then, a semiconductor light emitting structure is epitaxially formed on the surface of the substrate. Thereby, the present invention can achieve a light emitting diode structure having improved internal and external quantum efficiencies.

Abstract: A nitride semiconductor light-emitting device with an electron pattern that applies current uniformly to an active layer to improve light emission efficiency is provided. The nitride semiconductor light-emitting device includes multiple layers of a substrate, an n-type nitride layer, an active layer of a multi-quantum-well structure, and a p-type nitride layer. The nitride semiconductor light-emitting device further includes a p-electrode pattern and an n-electrode pattern. The p-electrode pattern includes one or more p-pads disposed on the p-type nitride layer, and one or more p-fingers extending from the p-pads. The n-electrode pattern includes one or more n-pads disposed on an exposed region of the n-type nitride layer to correspond to the p-pads, and one or more n-fingers extending from the n-pads. The n-fingers have identical resistance, and the p-fingers have identical resistance to improve current spreading to the active layer.

Abstract: A GaN semiconductor light-emitting element is provided. The GaN semiconductor light-emitting element includes an island-type seed region composed of a GaN-based compound semiconductor disposed on a substrate; an underlying layer having a three-dimensional shape composed of a GaN-based compound semiconductor, disposed on at least the seed region; a first GaN-based compound semiconductor layer of a first conductivity type, an active layer composed of a GaN-based compound semiconductor, and a second GaN-based compound semiconductor layer of a second conductivity type disposed in that order on the underlying layer; a first electrode electrically connected to the first GaN-based compound semiconductor layer; and a second electrode disposed on the second GaN-based compound semiconductor layer. The top face of the seed region is the A plane, and at least one side face of the underlying layer is the S plane.

Abstract: In a method of making a semiconductor light generating device, a GaN-based semiconductor portion is formed on a GaN or AlGaN substrate. The GaN-based semiconductor portion includes a light generating film. An electrode film is formed on the GaN-based semiconductor film. A conductive substrate is bonded to a surface of the electrode film using a conductive adhesive. After bonding the conductive substrate, the GaN or AlGaN substrate is separated from the GaN-based semiconductor portion to form the semiconductor light generating device.

Abstract: The present disclosure relates to a III-nitride semiconductor light emitting device which improves external quantum efficiency by using a p-type nitride semiconductor layer with a rough surface, the p-type nitride semiconductor layer including: a first nitride semiconductor layer with a first doping concentration, a second nitride semiconductor layer with a second doping concentration lower than the first doping concentration and with the rough surface, and a third nitride semiconductor layer with a higher doping concentration than a second doping concentration.

Abstract: Affords a semiconductor light-emitting device in which a decrease in external quantum efficiency has been minimized even at high current densities. In a semiconductor light-emitting device (11), a gallium nitride cladding layer (13) has a threading dislocation density of 1×107 cm?2 or less. An active region (17) has a quantum well structure (17a) consisted of a plurality of well layers (19) and a plurality of barrier layers (21), and the quantum well structure (17a) is provided so as to emit light having a peak wavelength within the wavelength range of 420 nm to 490 nm inclusive. The well layers (19) each include an un-doped InXGa1-XN (0<X<0.14, X: strained composition) region. The barrier layers (21) include an un-doped InYGa1-YN (0?Y?0.05, Y: strained composition, Y<X) region. Herein, indium composition X is indicated as strained composition, not as relaxation composition, in the embodiments of the present invention.

Abstract: The present invention discloses a high brightness LED structure, wherein a highly-doped n-type AlInP island structure is formed on a portion of the surface of an AlGaInP semiconductor stack structure and functions as a current barrier structure. The island structure is covered by a p-type window layer and positioned below a p-type ohmic electrode. The island structure can make more input current flow to the AlGaInP semiconductor stack structure not shielded by the light-emitting side electrode and thus can optimize the current distribution and promote the light-emitting efficiency.

Abstract: There is provided a method of manufacturing a nitride semiconductor light emitting device. A method of manufacturing a nitride semiconductor light emitting device according to an aspect of the invention may include: nitriding a surface of an m-plane sapphire substrate; forming a high-temperature buffer layer on the m-plane sapphire substrate; depositing a semi-polar (11-22) plane nitride thin film on the high-temperature buffer layer; and forming a light emitting structure including a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer on the semi-polar (11-22) plane nitride thin film.

Abstract: In one embodiment, the ESD device uses highly doped P and N regions deep within the ESD device to form a zener diode that has a controlled breakdown voltage.

Abstract: There is provided a nitride semiconductor light emitting device capable of inhibiting output deterioration of light emission caused by quality deterioration of a nitride semiconductor layer due to lattice-mismatching between a substrate and the nitride semiconductor layer, and utilizing light traveling to the substrate efficiently, while forming a light emitting device of a vertical type which has one electrode on a back surface of the substrate by using the substrate made of SiC. A light reflecting layer (2) which is formed by laminating low refractive index layers (21) and high refractive index layers (22) having different refractive indices alternately is directly provided on the SiC substrate (1), and a semiconductor lamination portion (5) which is formed by laminating nitride semiconductor layers so as to form at least a light emitting layer forming portion (3) is provided on the light reflecting layer (2).

Abstract: A semiconductor light-emitting device has a semiconductor substrate, an n-type cladding layer, an active layer, a p-type cladding layer, a p-type buffer layer, a p-type contact layer, and a current spreading layer. A part or all of the p-type buffer layer has a low Mg concentration buffer layer with a Mg concentration of 3.0×1017/cm3 or less and a film thickness of 50 nm or more.

Abstract: A compound semiconductor light-emitting diode includes a light-emitting layer formed of aluminum-gallium-indium phosphide, a light-emitting part 13 having component layers individually formed of a Group III-V compound semiconductor, a transparent supporting layer 14 bonded to one of the outermost surface layers 135 of the light-emitting part 13 and transparent to the light emitted from the light-emitting layer 133, and a bonding layer 141 formed between the supporting layer 14 and the one of the outermost surface layers 135 of the light-emitting part 13 containing oxygen atoms at a concentration of 1×1020 cm?3 or less.

Abstract: A wire-bond free semiconductor device with two electrodes both of which are accessible from the bottom side of the device. The device is fabricated with two electrodes that are electrically connected to the oppositely doped epitaxial layers, each of these electrodes having leads with bottom-side access points. This structure allows the device to be biased with an external voltage/current source, obviating the need for wire-bonds or other such connection mechanisms that must be formed at the packaging level. Thus, features that are traditionally added to the device at the packaging level (e.g., phosphor layers or encapsulants) may be included in the wafer level fabrication process. Additionally, the bottom-side electrodes are thick enough to provide primary structural support to the device, eliminating the need to leave the growth substrate as part of the finished device.

Abstract: Light-emitting devices, and related components, systems and methods are disclosed.

Abstract: An electronic device includes a conductive n-type substrate, a Group III nitride active region, an n-type Group III-nitride layer in vertical relationship to the substrate and the active layer, at least one p-type layer, and means for providing a non-rectifying conductive path between the p-type layer and the n-type layer or the substrate. The non-rectifying conduction means may include a degenerate junction structure or a patterned metal layer.

Abstract: A method for producing a gallium nitride based compound semiconductor light emitting device which is excellent in terms of the light emitting properties and the light emission efficiency and a lamp is provided. In such a method for producing a gallium nitride based compound semiconductor light emitting device, which is a method for producing a GaN based semiconductor light emitting device having at least a buffer layer, an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer on a translucent substrate, on which an uneven pattern composed of a convex shape and a concave shape is formed, the buffer layer is formed by a sputtering method conducted in an apparatus having a pivoted magnetron magnetic circuit and the buffer layer contains AlN, ZnO, Mg, or Hf.

Abstract: A double hetero structure light-emitting diode device includes an active layer (6), a positive-electrode-side cladding layer, a negative-electrode-side cladding layer (4), a window layer (9) and an undoped AlInP layer. The positive-electrode-side cladding layer includes an undoped AlInP layer (7) grown to have a thickness of 0.5 ?m and an intermediate layer (8) doped to assume p-type conductivity and having an intermediate energy band gap value between that of the undoped AlInP layer and that of the window layer. The window layer on the intermediate layer is a GaP layer grown at 730° C. or higher and at a growth rate of 7.8 ?m/hour or more in the presence of Ze serving as a dopant. The negative-electrode-side cladding layer is provided with an undoped AlInP layer (5) having a thickness of 0.1 ?m or more.

Abstract: It is an object of the present invention to provide a light-emitting device with high current efficiency and high display quality, in which a change in luminance with time is suppressed. The light-emitting device is provided with a plurality of light-emitting elements in each of which a plurality of light-emitting units each including at least one light-emitting layer are connected in series between a pair of electrodes. Between one of light-emitting units and the other light-emitting unit, an intermediate conductive layer is provided in the light-emitting unit. The light-emitting layer includes base material which is a compound containing an element belonging to group 2 and an element belonging to group 16 or a compound containing an element belonging to group 12 and an element belonging to group 16, and an impurity element which is an emission center. This structure makes it possible to increase light emission luminance without increasing current density.

Abstract: Disclosed is a photoelectric surface including: a first group III nitride semiconductor layer that produces photoelectrons according to incidence of ultraviolet rays; and a second group III nitride semiconductor layer provided adjacent to the first group III nitride semiconductor layer and made of a thin-film crystal having c-axis orientation in a thickness direction, the second group III nitride semiconductor layer having an Al composition higher than that of the first group III nitride semiconductor layer.

Abstract: It is an object of the present invention to provide an organic light-emitting display of high light-emitting efficiency. The organic light-emitting element comprising a board, upper electrode, lower electrode, a plurality of light-emitting units placed between the upper and lower electrodes, and a charge-generating layer placed between a plurality of the light-emitting units, wherein one of the light-emitting units has a layer for emitting monochromatic light and one of the light-emitting units has a layer for emitting polychromatic light, the former unit having an equivalent or lower light-emitting efficiency than the latter unit.

Abstract: The invention discloses a semiconductor light-emitting device. The semiconductor light-emitting device includes a substrate, a first semiconductor material layer, a light-emitting layer, a second semiconductor material layer, a first transparent insulating layer, a metal layer and at least one electrode. The first semiconductor material layer, the light-emitting layer, and the second semiconductor material layer are formed in sequence on the substrate. An opening is formed on the upper surface of the second semiconductor material layer and extends to the interior of the first semiconductor material layer. The first transparent insulating layer overlays the sidewalls of the opening and substantially overlays the upper surface of the second semiconductor material layer such that a region of the upper surface is exposed. The metal layer fills the opening, overlays the exposed region, and partially overlays the first transparent insulating layer. The at least one electrode is formed on the metal layer.

Abstract: A substrate system of the kind having a buffer region interposed between a silicon substrate proper and a nitride semiconductor region in order to make up for a difference in linear expansion coefficient therebetween. Electrodes are formed on the nitride semiconductor layer or layers in order to provide HEMTs or MESFETs. The buffer region is a lamination of a multiplicity of buffer layers each comprising a first, a second, and a third buffer sublayer of nitride semiconductors, in that order from the silicon substrate proper toward the nitride semiconductor region. The three sublayers of each buffer layer contain aluminum in varying proportions including zero. The aluminum proportion of the third buffer sublayer is either zero or intermediate that of the first buffer sublayer and that of the second.

Abstract: The invention relates to a monolithic white light emitting device using wafer bonding or metal bonding. In the invention, a conductive submount substrate is provided. A first light emitter is bonded onto the conductive submount substrate by a metal layer. In the first light emitter, a p-type nitride semiconductor layer, a first active layer, an n-type nitride semiconductor layer and a conductive substrate are stacked sequentially from bottom to top. In addition, a second light emitter is formed on a partial area of the conductive substrate. In the second light emitter, a p-type AlGaInP-based semiconductor layer, an active layer and an n-type AlGaInP-based semiconductor layer are stacked sequentially from bottom to top. Further, a p-electrode is formed on an underside of the conductive submount substrate and an n-electrode is formed on a top surface of the n-type AlGaInP-based semiconductor layer.

Abstract: The present invention aims to provide a long-lived semiconductor laser device with low threshold current and available for high-output operation in a blue-violet semiconductor laser device using a nitride semiconductor layer. In the semiconductor laser device, the following layers are sequentially formed on a GaN substrate 1: an n-type GaN layer 2; an n-type AlGaN cladding layer 3, a first n-type GaN guiding layer 4; and a p-type AlGaN blocking layer 6 (current-blocking layer), further a striped opening is formed on a portion of the p-type AlGaN blocking layer 6, a second n-type GaN guiding layer 5 is formed to cover the opening, and the following layers are sequentially formed on the second n-type GaN guiding layer 5: an InGaN multiple quantum well active layer 7; an undoped GaN guiding layer 8; a p-type AlGaN electron overflow suppression layer 9, a p-type AlGaN cladding layer 10, and a p-type GaN contact layer 11.

Abstract: A method is provided for processing a substrate. The substrate has at least one filter region, a plurality of bond pads, and a plurality of scribe lines arranged around the filter region and bond pads. A first planarization layer is formed above the substrate. The planarization layer has a substantially flat top surface overlying the filter region, the bond pads and the scribe lines. At least one color resist layer is formed over the first planarization layer and within the filter region while the first planarization layer covers the bond pads and the scribe lines.

Abstract: A boron phosphide-based compound semiconductor device with excellent device properties, comprising a boron phosphide-based compound semiconductor layer having a wide bandgap is provided. The boron phosphide-based compound semiconductor layer consists of an amorphous layer and a polycrystal layer provided to join with the amorphous layer, and the room-temperature bandgap of the boron phosphide-based compound semiconductor layer is from 3.0 eV to less than 4.2 eV.

Abstract: The present invention provides a III-nitride compound semiconductor light emitting device comprising an active layer (30) which emits light and is interposed between a lower contact layer (20) made of n-GaN and an upper contact layer (40) made of p-GaN, in which a sequential stack of a lattice mismatch-reducing layer L3 made of InxGa1-xN, an electron supply layer L4 made of n-GaN or n-AlyGa1-yN and a crystal restoration layer L5 made of InzGa1-zN is interposed between the lower contact layer and the active layer, and further comprising an electron acceleration layer L1 made of n-GaN or undoped GaN and a heterojunction electron barrier-removing layer L2, thereby the lattice mismatch between the lower contact layer (20) and the active layer (30) can be reduced.

Abstract: A light-emitting diode device (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first n-type semiconductor layer, an n-type three-dimensional electron cloud structure, a second n-type semiconductor layer, an active layer and a p-type semiconductor layer. The first n-type semiconductor layer, the n-type three-dimensional electron cloud structure, the second n-type semiconductor layer, the active layer and the p-type semiconductor layer are subsequently grown on the substrate.

Abstract: An Epi-Structure of light-emitting device, comprising: a first semiconductor conductive layer forming on a substrate; an active layer forming on a first semiconductor conductive layer with Multi-Quantum Well (MQW); and a second semiconductor conductive layer forming on the active layer; wherein a plurality of particles formed by at least one hetero-material are scattered between the first semiconductor conductive layer and the active layer in order to form an uneven Multi-Quantum Well.

Abstract: An inventive method includes the steps of: growing a first p-type semiconductor layer of a compound semiconductor containing phosphorus on a substrate; and growing a second p-type semiconductor layer of a compound semiconductor containing arsenic on the first p-type semiconductor layer. While the first p-type semiconductor layer is grown, magnesium is added to the first semiconductor layer. While the second p-type semiconductor layer is grown, a p-type impurity other than magnesium is added to the second semiconductor layer.

Abstract: A Group III nitride semiconductor light-emitting device includes a stacked structure 11 formed on a crystal substrate (100) to be removed from it and including two Group III nitride semiconductor layers 104 and 106 having different electric conductive types and a light-emitting layer 105 which is stacked between the two Group III nitride semiconductor layers and which includes a Group III nitride semiconductor, and a plate body 111made of material different from that of the crystal substrate and formed on a surface of an uppermost layer which is opposite from the crystal substrate that is removed from the stacked structure.

Abstract: The invention discloses a semiconductor light-emitting device and a method of fabricating the same. The semiconductor light-emitting device according to the invention includes a substrate, a first semiconductor material layer, a multi-layer structure and an ohmic electrode structure. The substrate has a first upper surface and a plurality of recesses formed on the first upper surface. The first semiconductor material layer is formed on the first upper surface of the substrate and has a second upper surface. The multi-layer structure is formed on the second upper surface of the first semiconductor material layer and includes a light-emitting region. The ohmic electrode structure is formed on the multi-layer structure. In particular, the first semiconductor material layer has a refractive index different from those of the substrate and a bottom-most layer of the multi-layer structure.

Abstract: Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, a first thin insulating layer, and a second conductive type semiconductor layer. The active layer is formed on the first conductive type semiconductor layer. The first thin insulating layer is formed on the active layer. The second conductive type semiconductor layer is formed on the thin insulating layer.

Abstract: An object of the present invention is to provide a gallium nitride compound semiconductor multilayer structure useful for producing a gallium nitride compound semiconductor light-emitting device which operates at low voltage while maintaining satisfactory light emission output. The inventive gallium nitride compound semiconductor multilayer structure comprises a substrate, and an n-type layer, a light-emitting layer, and a p-type layer formed on the substrate, the light-emitting layer having a multiple quantum well structure in which a well layer and a barrier layer are alternately stacked repeatedly, said light-emitting layer being sandwiched by the n-type layer and the p-type layer, wherein the well layer comprises a thick portion and a thin portion, and the barrier layer contains a dopant.

Abstract: A light-emitting diode (10) has a light-extracting surface and includes a transparent substrate (14), a compound semiconductor layer (13) bonded to the transparent substrate, a light-emitting part (12) contained in the compound semiconductor layer, a light-emitting layer (133) contained in the light-emitting part and formed of (AlXGa1-X)YIn1-YP (0?X?1, 0<Y?1), a first electrode (15) and a second electrode (16) of different polarities provided on a surface of the light-emitting diode opposite the light-extracting surface, and a reflecting metal film (17) formed on the first electrode. The transparent substrate has a first side face (142) virtually perpendicular to a light-emitting surface of the light-emitting layer on a side near the light-emitting layer and a second side face (143) oblique to the light-emitting surface on a side distant from the light-emitting layer. The first and second electrodes are mounted respectively on electrode terminals (43, 44).

Abstract: An infrared emitting diode that can be utilized as a high power and rapidly responsive infrared light source for both infrared and remote control communications is disclosed which comprises at least one p-type clad layer containing AlxGa1-xAs of p type where 0.15?x?0.45, an active layer containing AlyGa1-yAs of p type where 0?y?0.01 and at least one n-type clad layer containing AlzGa1-zAs where 0.15?z?0.45 wherein said active layer has a thickness of 2 to 6 ?m and which has an emission peak wavelength of 880 to 890 nm at room temperature.

Abstract: A nitride semiconductor stacked structure having good working efficiency includes a p-type nitride semiconductor layer of low resistance, which is formed from an organometallic compound, compounds including Group V elements, including ammonia and a hydrazine derivative, and a p-type impurity material on a substrate. The p-type nitride layer has a carbon concentration not higher than 1×1018 cm?3.

Abstract: The present invention provides an optoelectronic device which includes a first electrode, a substrate on the first electrode; a buffer layer on the substrate, in which the buffer layer includes a first gallium nitride based compound layer on the substrate, a second gallium nitride based compound layer, and a II-V group compound layer between the first gallium nitride based compound layer and the second gallium nitride based compound layer; a first semiconductor conductive layer on the buffer layer; an active layer on the first semiconductor conductive layer, in which the active layer is an uneven Multi-Quantum Well; a semiconductor conductive layer on the active layer; a transparent layer on the second semiconductor conductive layer; and a second electrode on the transparent layer.

Abstract: A ZnO-containing semiconductor layer contains Se or S added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted.

Abstract: Systems and methods are disclosed for fabricating a semiconductor light emitting diode (LED) device by forming an n-gallium nitride (n-GaN) layer on the LED device and roughening the surface of the n-GaN layer to extract light from an interior of the LED device.

Abstract: A white-light emitting semiconductor device includes a first light-emitting die, a second light-emitting die, a photostimulable luminescent substance, and a holding assembly. The first light-emitting die emits a first radiation having a first wavelength range. The second light-emitting die emits a second radiation having a second wavelength range, and a third radiation having a third wavelength range different from the second wavelength range. The photostimulable luminescent substance is excitable to emit a fourth radiation having a fourth wavelength range. The fourth radiation is mixed with the first, second, and third radiations to result in white light. The holding assembly holds the first and second light-emitting dies, and the photostimulable luminescent substance.

Abstract: An organic light emitting display device may include: a substrate having first, second and third pixel regions. A first electrode layer may be formed in each of the first, second and third pixel regions on the substrate. A hole injection layer may be formed over an entire surface of the substrate on the first electrode layers. A first hole transport layer may be formed on the first electrode layers in the first, second and third pixel region. A second hole transport layer may be formed on the first hole transport layer in any two adjacent pixel regions among the first, second and third pixel regions. A third hole transport layer may be formed on the second hole transport layer in any one of the two adjacent pixel region. A first, second and third organic emission layers may be formed on the first, second and third hole transport layer. A second electrode layer may be formed on the first, second and third organic emission layers.

Abstract: In a nitride semiconductor light emitting device having patterns formed on the upper and lower surfaces of a substrate from which light is emitted in a flip chip bonding structure, the patterns are capable of changing light inclination at the upper and lower surfaces of the substrate to decrease total reflection at the interfaces, thereby improving light emitting efficiency.

Abstract: Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting device comprises a p-type substrate, a p-type semiconductor layer, an active layer, and an n-type semiconductor layer. The p-type semiconductor layer is formed on the p-type substrate. The active layer is formed on the p-type semiconductor layer. The n-type semiconductor layer is formed on the active layer.

Abstract: A boron phosphide-based semiconductor device enhanced in properties includes a substrate (11) composed of a {111}-Si single crystal having a surface {111} crystal plane and a boron phosphide-based semiconductor layer formed on the surface of the substrate and composed of a polycrystal layer (12) that is an aggregate of a plurality of a triangular pyramidal single crystal entities (13) of the boron phosphide-based semiconductor crystal, where in each single crystal entity has a twining interface that forms an angle of 60° relative to a <110> crystal direction of the substrate.