Abstract: A metallic frame of an LED structure includes two conductive frames spaced apart from each other with a gap and a plurality of extending arms respectively and integrally extended from the conductive frames. Each conductive frame includes a top surface, a bottom surface, and a lateral surface connecting the top and bottom surfaces. Each top surface comprises a sealed region and a mounting region surrounded by the sealed region, and the sealed and mounting regions of each conductive frame are defined by an insulating body. Each conductive frame has at least one slot concavely formed on the sealed region, and the lateral surface is formed with two openings and the slot is communicated with the two openings, such that the slot of each of the conductive frames is configured to separate at least one of the extending arms from the mounting region of the conductive frames.

Abstract: In one embodiment, the transparent growth substrate (38) of an LED die is formed to have light scattering areas (40A-C), such as voids formed by a laser. In another embodiment, the growth substrate is removed and replaced by another substrate that is formed with light scattering areas. In one embodiment, the light scattering areas are formed over the light absorbing areas of the LED die, to reduce the amount of incident light on those absorbing areas, and over the sides (42A, 42B) of the substrate to reduce light guiding. Another embodiment comprises a replacement substrate may be formed to include reflective particles in selected areas where there are no corresponding light generating areas in the LED semiconductor layers such as—type metal contacts (28). This prevents reabsorption into absorbing regions of the semiconductor layer thereby enhancing external efficiency of the device. A 3D structure may be formed by stacking substrate layers containing the reflective areas.

Abstract: Relatively small, electrically isolated segments of LED light sheets are fabricated having an anode terminal and a cathode terminal. The segments contain microscopic printed LEDs that are connected in parallel by two conductive layers sandwiching the LEDs. The top conductive layer is transparent. Separately formed from the light sheet segments is a flexible, large area conductor backplane having a single layer or multiple layers of solid metal strips (traces). The segments are laminated over the backplane's metal pattern to supply power to the segment terminals. An adhesive layer secures the segments to the backplane. The metal pattern may connect the segments in series, or parallel, or form an addressable circuit for a display. The segments may be on a common substrate or physically separated from each other prior to the lamination.

Abstract: A method for manufacturing a light emitting device includes providing a wafer including a substrate, a light emitting structure layer and a plurality of electrodes, forming a phosphor layer so as to cover a surface of the wafer on a side of the substrate, dividing the wafer and the phosphor layer so as to form a plurality of light emitting elements, measuring a luminescent chromaticity of the plurality of light emitting elements so as to classify into a first light emitting element having a luminescent chromaticity within a required chromaticity range and a second light emitting element having a luminescent chromaticity outside the required chromaticity range, and forming a second light emitting device that includes the plurality ones of the second light emitting element and the luminescent chromaticity within the required chromaticity range by using the second light emitting element.

Abstract: Color mixing optics for a multi-color LED lamp comprise an outer reflector having a paraboloidal surface of revolution and a total inner reflection (TIR) lens having an outer contour with a paraboloidal surface of revolution. The outer reflector and the TIR lens are centered around a common center axis. A common focal point of the outer reflector and the TIR lens is provided for placing a LED assembly. Such LED lamps produce uniform color throughout the entire light beam while the outer dimensions are such that the optics fit into conventional lamp housings.

Abstract: The present invention aims to provide a curable resin composition which gives a cured product having a low linear expansion coefficient. The curable resin composition of the present invention contains, as essential components, (A) an organic compound having at least two carbon-carbon double bonds reactive with SiH groups per molecule, (B) a compound containing at least two SiH groups per molecule, (C) a hydrosilylation catalyst, (D) a silicone compound having at least one carbon-carbon double bond reactive with a SiH group per molecule, and (E) an inorganic filler.

Abstract: An LED packaging includes a substrate having a top surface and a bottom surface opposite to the top surface, a recess defined in the top surface, an LED mounted on the top surface of the substrate, a zener diode received in the recess, and a reflecting layer formed in the recess and enclosing the zener diode therein.

Abstract: A metal matrix composite having high corrosion resistance even if the coating film deposit amount is low is obtained. A metal matrix composite includes a metal or alloy substrate coated with a molten transition metal oxide glass, wherein the transition metal oxide glass has an n-type polarity. Further, a method for producing a metal matrix composite includes a step of applying a paste containing a transition metal oxide glass, an organic binder, and an organic solvent onto the surface of a metal or alloy substrate, and a step of forming a glass coating film on the substrate by heating to and maintaining a temperature equal to or higher than the softening point of the transition metal oxide glass after the application step, wherein the transition metal oxide glass has an n-type polarity.

Abstract: A light emitting diode (LED) chip including a first type semiconductor layer, an light-emitting layer, a second type semiconductor layer, a current blocking layer, a transparent conductive layer and an electrode is provided. The light-emitting layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the light-emitting layer. The current blocking layer is disposed on the second type semiconductor layer. The transparent conductive layer is disposed on the second type semiconductor layer and covered the current blocking layer. The electrode is disposed on the transparent conductive layer corresponding to the current blocking layer. The current blocking layer and the electrode respectively have a first width and a second width in a cross section view, and the first width of the current blocking layer is larger than the second width of the electrode.

Abstract: According to one embodiment, a semiconductor light-emitting device includes a first electrode and a second electrode provided on the same side of a semiconductor layer. A first insulating film covers the first electrode and the second electrode. Openings in the first insulating film expose portions of the first electrode and the second electrode. Wiring portions are respectively provided on the first insulating film and in the openings in the first insulating films. A first wiring portion is connected to the first electrode and a second wiring portion is connected to the second electrode. A second insulating film is provided between a first wiring portion and a second wiring portion, with a portion of the second insulating film being provided in a gap between the first insulating film and the first wiring portion.

Abstract: We describe a lighting tile having a substrate bearing an electrode structure, the electrode structure comprising: a plurality of electrically conductive tracks disposed over said substrate; and an electrical connection region connecting to said plurality of tracks; wherein the height of said tracks tapers away from said connection region to compensate for a reduction in luminance from said lighting tile array from the electrical connection region which arises from a non-uniform voltage drop which appears along the tracks in use. Advantageously the tracks are fabricated by electroplating: then, as the rate of deposition is determined by the voltage drop along a track during plating, the height of the deposited tracks, and therefore their resistance, will match the profile required in operation to compensate for the reduction in luminance which would otherwise occur.

Abstract: The instant disclosure relates to a flip-chip LED package module and a method of manufacturing thereof. The method of manufacturing flip-chip LED package module comprises the following steps. A plurality of LEDs is disposed on a carrier. A packaging process is forming a plurality of transparent lens corresponding to LEDs and binding each other by a wing portion. A separating process is proceeding to form a plurality of flip-chip LED structures without the carrier. A bonding process is proceeding to attach at least one flip-chip LED structure on the circuit board.

Abstract: A display device includes a lower display panel, an upper display panel facing the lower display panel, a metal oxide layer surrounding outermost surfaces of the upper display panel and the lower display panel, and a barrier layer surrounding the metal oxide layer. The barrier layer includes a self-assembled monolayer.

Abstract: A transparent conductive layer structure for an LED is provided. The LED includes a reflecting layer, an N-type electrode, an N-type semiconductor layer, a light emitting layer, a P-type semiconductor layer, a current block layer, a transparent conductive layer and a P-type electrode that are stacked on a substrate. The current block layer is disposed between and separates the P-type electrode and the P-type semiconductor layer. The transparent conductive layer is disposed between the P-type electrode and the current block layer, and connects to the P-type electrode and the P-type semiconductor layer. At a region corresponding to the P-type electrode, a plurality of holes are disposed at the transparent conductive layer to reduce an area of and hence an amount of light absorbed by the transparent conductive layer, thereby increasing light extraction efficiency of excited light from the light emitting layer and enhancing light emitting efficiency of the LED.

Abstract: A semiconductor light-emitting element includes: a laminated semiconductor layer in which an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer are laminated; a transparent conductive layer laminated on the p-type semiconductor layer of the laminated semiconductor layer and composed of a metal oxide having optical transparency to light emitted from the light-emitting layer; an insulating reflation layer laminated on the transparent conductive layer in which plural opening portions are provided to expose part of the transparent conductive layer; a metal reflection layer formed on the insulating reflection layer and inside the opening portions and composed of a metal containing aluminum; and a metal contact layer provided between the part of the transparent conductive layer exposed at the opening portion and the part of the metal reflection layer formed inside the opening portion, which contains an element selected from Group VIA and Group VIII of a periodic table.

Abstract: The present disclosure relates to a semiconductor light emitting element. The semiconductor light emitting element has a first conductivity type layer, a light emitting layer, and a second conductivity type layer that are laminated; a first pad electrode provided to the first conductivity type layer; and second pad electrodes provided to the second conductivity type layer. The first pad electrode and the second pad electrode is disposed on the same side of the semiconductor light emitting element. Plan view shape of the semiconductor light emitting element is rectangular. The first pad electrode is disposed in a middle region of three regions of the semiconductor light emitting element. The three regions are defined by dividing the light emitting element into three equal parts in the lengthwise direction of the semiconductor light emitting element. The second pad electrodes are respectively disposed in regions on both sides of the three regions.

Abstract: The present disclosure relates to a semiconductor light-emitting device, comprising: a plurality of semiconductor layers grown sequentially using a growth substrate; a first electrode for providing either electrons or holes to a first semiconductor layer; a non-conductive reflective film formed over a second semiconductor layer to reflect light from an active layer towards the first semiconductor layer which is on the growth substrate side; and a finger electrode formed between the plurality of semiconductor layers and the non-conductive reflective film, which is extended so as to provide remaining electrons or holes to the second semiconductor layer, which is in electrical communication with the second semiconductor layer, and which has an electrical connection for receiving the remaining electrons or holes.

Abstract: An LED package (40) and manufacturing method in which the package has LED substrate (50) and a circuit substrate (54) bonded together, with the LED over the integrated circuit, and with electrical connection between the LED and corresponding integrated circuit. The package has package terminals (56a, 56b) on one face only with through vias (58a, 58b) providing connection between the LED substrate and the circuit substrate.

Abstract: A light emitting element includes a semiconductor stacked layer body having an n-type semiconductor layer, an active layer, and a p-type semiconductor layer in this order, and a plurality of exposed portions defined at an upper surface side of the semiconductor stacked layer body, the plurality of exposed portions respectively exposing a part of the n-type semiconductor layer, a p-side electrode arranged in a first region and electrically connected with an upper surface of the p-type semiconductor layer and, arranged at one corner above the p-type semiconductor layer in a plan view, and an n-side electrode electrically integrally connected to the plurality of exposed portions and arranged in a different region in a plan view.

Abstract: In the present invention, a fabrication process for epitaxy onto back-side patterned substrate, where the substrate patterns were defined prior to epitaxy and therefore simplify post growth processing. Specifically, for LED devices, said fabrication process reduces the post growth processing steps required to obtain high LEE due to strong scattering of the back-side features defined on the substrate. The features defined on the back-side patterned substrate scatters strongly with light emitted from the LED devices. Methods of obtaining such features include wet and dry etching.

Abstract: Disclosed is a light emitting device and a method of manufacturing the same. The light emitting device includes a body, a first electrode installed in the body and a second electrode separated from the first electrode, a light emitting chip formed on one of the first and second electrodes, and electrically connected to the first and second electrodes, and a protective cap projecting between the first and second electrodes.

Abstract: A light-emitting element comprises a light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode comprising multiple contact areas and multiple extension areas, wherein the multiple contact areas are physically separated from one another; and a first conductive part and a second conductive part formed on the light-emitting semiconductor stack and respectively electrically connected to the first semiconductor layer and the second semiconductor layer, wherein the first conductive part and the second conductive part each comprises a concave-convex profile.

Abstract: LED devices are provided including an LED package including an LED and an optical element in an optical receiving relationship with the LED. The optical element has a higher light absorbing property at an exit surface away from the LED than at a bottom surface proximal to the LED. The optical element may include different epoxies, dye, and opaque particles. Methods for producing disclosed LED devices are also disclosed.

Abstract: An LED circuit (40) comprises integrated circuit LEDs (50) each mounted over a respective LED control circuit (42). The LED control circuits (42) are electrically connected together to by the integrated circuit to define a string of LED control circuits, each having at least one control line (44) leading to the circuit. This provides a compact circuit of multiple LEDs with individual control of the LEDs.

Abstract: A light emitting diode (LED) package includes an LED chip, a first lead frame and a second lead frame electrically connected to the LED chip and separated by a space, and a housing disposed on the first lead frame and the second lead frame. The housing includes an external housing surrounding a cavity, the cavity exposing a first portion of the first lead frame and a first portion of the second lead frame, and an internal housing disposed in the space, the internal housing covering a top portion of the first lead frame and a top portion of the second lead frame.

Abstract: An optoelectronic lighting device includes a lighting module with an optoelectronic semiconductor chip. A connection carrier has a first main surface and a second main surface facing away from the first main surface. The lighting module is arranged on the first main surface of the connection carrier, and the connection carrier adheres to a heat sink on account of a magnetic attraction.

Abstract: An ultraviolet light emitting device having high quality and high reliability is provided by preventing deterioration of electrical characteristics which is associated with an ultraviolet light emission operation and caused by a sealing resin. The ultraviolet light emitting device is an ultraviolet light emitting device including: an ultraviolet light emitting element (2) formed of a nitride semiconductor; and an ultraviolet-transparent sealing resin (3) covering the ultraviolet light emitting element (2), wherein at least a specific portion (3a) of the sealing resin (3), which is in contact with pad electrodes (18) and (17) of the ultraviolet light emitting element (2), is a first type amorphous fluororesin, and a terminal functional group of a polymer or a copolymer that forms the first type amorphous fluororesin is a nonreactive terminal functional group which is not bondable to a metal that forms the pad electrodes (16) and (17).

Abstract: A light-emitting diode device includes a carrier having at least one cavity, a light-emitting diode chip is arranged in a manner at least partly recessed in the at least one cavity, and an ESD protection element, which is formed by a partial region of the carrier. Furthermore, a light-emitting diode device includes a carrier having at least one cavity, a light-emitting diode chip arranged on the carrier, and an electrical component arranged at least partly recessed in the at least one cavity. Furthermore, the light-emitting diode device includes an ESD protection element, which is formed by a partial region of the carrier.

Abstract: A package support including: metal frames connected together; one or more dielectric materials disposed in an inner gap of the metal frames; wherein: the package support has a frame region and a function region; wherein the function region has complete upper and lower surfaces configured to prevent leakage if at least one of the entire upper or lower surfaces is covered with an encapsulant material. A fabrication method allows for manufacturing the package support with a high cell density, relatively low price, high reflectivity, good heat dissipation, and high reliability. The LED package using the package support has a smaller size and improved dissipation properties.

Abstract: According to one embodiment, a semiconductor device includes a semiconductor substrate in which a recess is provided on a back surface thereof, and a shape of the recess is reflected on a surface of a metal film which is also provided on the back surface of the semiconductor substrate.

Abstract: Provided is an optical semiconductor device includes: a light-emitting layer having a first main surface, a second main surface opposed to the first main surface, a first electrode and a second electrode which are formed on the second main surface; a fluorescent layer provided on the first main surface; a light-transmissive layer provided on the fluorescent layer and made of a light-transmissive inorganic material; a first metal post provided on the first electrode; a second metal post provided on the second electrode; a sealing layer provided on the second main surface so as to seal in the first and second metal posts with one ends of the respective first and second metal posts exposed; a first metal layer provided on the exposed end of the first metal post; and a second metal layer provided on the exposed end of the second metal post.

Abstract: An opto-electronic package having two enclosures in which a first non-hermetic enclosure provides the structural rigidity required to maintain the alignment of the optical components for a predetermined environmental range, and second flexible enclosure that provides a hermetical seal for the opto-electronic package.

Abstract: A light emitting device includes a light emitting structure having a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer; a first electrode disposed on the light emitting structure, configured as a plurality of dots and electrically connected to the first conductive semiconductor layer; an electrode pad electrically connected to the first electrode; and a second electrode electrically connected to the second conductive semiconductor layer.

Abstract: Solid-state radiation transducer (SSRT) devices having buried contacts that are at least partially transparent and associated systems and methods are disclosed herein. An SSRT device configured in accordance with a particular embodiment can include a radiation transducer including a first semiconductor material, a second semiconductor material, and an active region between the first semiconductor material and the second semiconductor material. The SSRT device can further include first and second contacts electrically coupled to the first and second semiconductor materials, respectively. The second contact can include a plurality of buried-contact elements electrically coupled to the second semiconductor material. Individual buried-contact elements can have a transparent portion directly adjacent to the second semiconductor material. The second contact can further include a base portion extending between the buried-contact elements, such as a base portion that is least partially planar and reflective.

Abstract: An electronic apparatus, such as a lighting fixture, includes a substrate, an electronic device such as a chip-on-board light emitting diode and a thermal interface located between the substrate and the electronic device. The thermal interface includes at least two distinct materials, including a dielectric material and a thermally conductive material. The dielectric material includes a cutout into which the thermally conductive material is located. The dielectric material can completely surround the perimeter of the electronic device or can be located proximate portions of the electronic device that are prone to arcing in order to protect the substrate from arcing. The electronic apparatus operates at a reduced temperature as compared to an electronic apparatus that does not include the thermal interface. Methods for making an electronic apparatus having a thermal interface with a discrete dielectric material and thermally conductive material are also described.

Abstract: A light-emitting diode device includes a carrier having at least one cavity, a light-emitting diode chip is arranged in a manner at least partly recessed in the at least one cavity, and an ESD protection element, which is formed by a partial region of the carrier. Furthermore, a light-emitting diode device includes a carrier having at least one cavity, a light-emitting diode chip arranged on the carrier, and an electrical component arranged at least partly recessed in the at least one cavity. Furthermore, the light-emitting diode device includes an ESD protection element, which is formed by a partial region of the carrier.

Abstract: Disclosed herein is a slim LED package. The slim LED package includes first and second lead frames separated from each other, a chip mounting recess formed on one upper surface region of the first lead frame by reducing a thickness of the one upper surface region below other upper surface regions of the first lead frame, an LED chip mounted on a bottom surface of the chip mounting recess and connected with the second lead frame via a bonding wire, and a transparent encapsulation material protecting the LED chip while supporting the first and second lead frames.

Abstract: A light-emitting device comprises: a light-emitting stack comprising a first side, a second side opposite to the first side, and an upper surface between the first side and the second side; a first electrode pad formed on the upper surface; a second electrode pad formed on the upper surface, and the first electrode pad is closer to the first side than the second electrode pad; and a first extension electrode comprising a first section extended from the first electrode pad toward the second electrode pad, and a second section extended from the first electrode pad toward the first side.

Abstract: A semiconductor device according to an embodiment includes a first semiconductor layer of a first GaN based semiconductor, a second semiconductor layer of a second GaN based semiconductor having a band gap narrower than the first GaN based semiconductor, a third semiconductor layer of a third GaN based semiconductor having a band gap wider than the second GaN based semiconductor, a fourth semiconductor layer of a fourth GaN based semiconductor having a band gap narrower than the third GaN based semiconductor, a fifth semiconductor layer of a fifth GaN based semiconductor having a band gap wider than the fourth GaN based semiconductor, a gate dielectric provided directly on the third semiconductor layer, the fourth semiconductor layer, and the fifth semiconductor layer, a gate electrode provided on the gate dielectric, a source and drain electrodes provided above the fifth semiconductor layer.

Abstract: Direct pin attachment is the most compact method to connect the OSA and the PCBA, due to better performance in general and allows maximum PCBA space for more functionality. However, direct pin attachment can result in concentrated stress in the OSA-PCBA joint area, which can affect the reliability and yield of the module. To overcome the problem, an integrated transceiver cage and housing is provided including a direct pin attachment with reinforcing tabs, which are fixed to the PCBA prior to the pins to transfer any stress between the OSA and PCBA, thereby reducing the amount of stress applied to the pins.

Abstract: Embodiments disclose a light emitting device package including an insulating layer, a first lead frame and a second lead frame disposed on the insulating layer electrically separate from each other, a light emitting device disposed on the second lead frame electrically connected to the first lead frame and the second lead frame, the light emitting device includes a light emitting structure having a first conduction type semiconductor layer, an active layer, and a second conduction type semiconductor layer and a lens which encloses the light emitting device, wherein the insulating layer has an end portion projected beyond at least one of an end portion of the first lead frame and an end portion of the second lead frame, to form an opened region which exposes the insulating layer.

Abstract: Various examples of a carrier structure and lighting device are described. A carrier structure configured to carry an LED includes a housing and a lead frame. The housing defines a concavity. The lead frame includes a main board portion having a main board through hole, at least two insertion portions extending from the main board portion into the main board through hole, and two electrode portions configured to be electrically coupled to the LED. The housing is disposed over the at least two insertion portions with the at least two insertion portions inserted into the housing. The concavity of the housing expose the electrode portions. Each of the electrode portions has a respective protrusion sub-portion that extends outside of the housing. Additionally, a lighting device utilizing the carrier structure is also provided.

Abstract: A planar lighting device comprises: a mounting substrate having a conduction pattern having an extension part formed on a base material, and a cover member is arranged on the conduction pattern, wherein the cover member has an opening that exposes together the two lands of the two adjacent light sources, and wherein the extension parts comprise: a first extension part formed to extend from a first end portion of the lands toward the light guide plate and to extend under the cover member; a second extension part formed to extend from a second end portion, toward the light guide plate and the other land of the pair of the lands and to extend under the cover member; and a third extension part formed to extend from the first end portion, toward an opposite side to the light guide plate and to extend under the cover member.

Abstract: A light-emitting device includes a semiconductor light-emitting element, a first resin layer, a first metallic layer, a second resin layer, and a second metallic layer. The semiconductor light-emitting element includes a semiconductor stacked body and an electrode provided on one side of the semiconductor stacked body. The second resin layer is provided on the first resin layer and has a lower surface in contact with the first resin layer and an upper surface opposite to the lower surface. The second metallic layer is provided in the second resin layer and has a metallic lower surface and a metallic upper surface opposite to the metallic lower surface. The metallic upper surface is exposed from the second resin layer. The metallic upper surface of the second metallic layer is at least partially lower in height from the semiconductor stacked body than the upper surface of the second resin layer.

Abstract: A method for packaging LED light source, a package structure of LED light source and a light source module are provided. The method for packaging LED light source includes providing a substrate integrated with LED chips, where a surface of the substrate is provided with a filling layer configured to cover the LED chips; printing, on the a surface of the filling layer, phosphor patterns to cover the surface of the filling layer, where the phosphor patterns include one or more first phosphor patterns, one or more second phosphor patterns and one or more third phosphor patterns, where every two of the first, the second and the third phosphor patterns are adjacent to each other. The package structure of LED light source and the light source module have good uniformity of light-emission and low cost, and the process of the method for packaging LED light source is simple.

Abstract: An LED package is described that acts as a sub-mount between a printed circuit board and an LED. The sub-mount includes a laminate to thermally isolate the LED from the PCB while providing a thermal heat dissipative sink for the LED.

Abstract: A method for manufacturing an LED module is provided that includes the steps of mounting an LED chip 2 on an obverse surface of leads 1A?, 1B?, and after the step of mounting the LED chip 2, providing a case 6 that covers part of the leads 1A?, 1B? and includes a reflective surface 61 surrounding the LED chip 2 in an in-plane direction of the leads 1A?, 1B?. With this arrangement, there is no risk that the arm for handling the LED chip 2 interferes with the case 6. This allows the distance between the reflective surface 61 and the LED chip 2 to be reduced, and hence allows making the LED module more compact.

Abstract: A floating heat sink support with copper sheets for a LED flip chip package may include at least two copper sheets and a flexible polymer for fixing the copper sheets, where the copper sheets separated from each other, and where each of the copper sheets is electrically connected with a positive or negative pole of a LED flip chip. Further, a LED package assembly may comprise the floating heat sink support mentioned above and one or more LED chips welded in a flip chip manner on the floating heat sink support. A number of copper sheets in the floating heat sink support are heated separately and expand separately to avoid breakage of a chip substrate resulting from the thermal expansion of a whole bulk of copper sheet, thereby improving the reliability of the LED package structure and prolonging the service life of a LED light source.

Abstract: A device for non-linear conversion of first infrared signal into a second infrared signal with a wavelength that is less than that of the first infrared signal by means of four-wave mixing, which includes at least one portion of SiGe arranged on at least one first layer of material with a refractive index which is less than that of silicon, a germanium concentration in the portion of SiGe which varies continuously between a first value and a second value which is greater than the first value, in a direction which is approximately perpendicular to a face of the first layer on which the portion of SiGe is arranged, and in which a summital part of the portion of SiGe where the germanium concentration is equal to the second value is in contact with a gas and/or a material with a refractive index which is less than that of the silicon.

Abstract: A LED module includes a substrate, a LED chip supported on the substrate, a metal wiring installed on the substrate, the metal wiring including a mounting portion on which the LED chip is mounted, an encapsulating resin configured to cover the LED chip and the metal wiring, and a clad member configured to cover the metal wiring to expose the mounting portion, the encapsulating resin arranged to cover the clad member.