Abstract: A light emitting device has; a light emitting element, a light reflecting member that is disposed so as to cover the lateral surfaces of the light emitting element and expose a top surface of the light emitting element, a frame that is disposed on the light reflecting member so as to surround an outer periphery of the top surface of the light emitting element, a light transmissive member that is disposed inside the frame, and a sealing member that covers the light reflecting member, the frame and the light transmissive member, and that has a flange covering part of the frame.

Abstract: There is provided an electronic component mounting substrate which excels in resistance to migration, and is thus capable of maintaining high thermal conductivity and insulation performance for a long period of time. An electronic component mounting substrate includes: a metallic substrate formed of aluminum or an aluminum-based alloy; an alumite layer disposed on the metallic substrate, having a network of crevices at an upper surface thereof; and a ceramic layer disposed on the alumite layer, part of the ceramic layer extending into the crevices.

Abstract: A display device including a substrate, a display unit on the substrate and including a display element for displaying an image, at least one organic encapsulation film formed on the display unit, and at least one refractive-index control encapsulation film adjacent to the at least one organic encapsulation film. A refractive index of a region of the at least one refractive-index control encapsulation film closer to the at least one organic encapsulation film is closer to a refractive index of the at least one organic encapsulation film than is a refractive index of a region of the at least one refractive-index control encapsulation film further from the at least one organic encapsulation film.

Abstract: A highly reliable display device. A first flexible substrate and a second flexible substrate overlap each other with an element positioned therebetween. A periphery of the overlapped first and second substrates is covered with a high molecular material having a light-transmitting property. The high molecular material is more flexible than the first substrate and the second substrate. As the element, for example, an EL element can be used.

Abstract: The present invention relates to a light emitting device. The light emitting device according to an embodiment of the present invention comprises: a light emitting structure comprising a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer; a channel layer arranged around the lower portion of the light emitting structure; a first electrode arranged on the channel layer; a second electrode arranged under the light emitting structure; and a connection wiring for electrically connecting the first electrode and the first conductive semiconductor layer.

Abstract: Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, an adhesive layer contacting a top surface of the first conductive semiconductor layer, a first electrode contacting a top surface of the first conductive semiconductor and a top surface of the adhesive layer, and a second electrode contacting the second conductive semiconductor layer, wherein the adhesive layer contacting the first electrode is spaced apart from the second electrode.

Abstract: A display device according to an embodiment of the present disclosure may include a lower substrate disposed with a line electrode at an upper portion thereof, a plurality of semiconductor light emitting devices electrically connected to the line electrode to generate light, a wavelength converter disposed on the semiconductor light emitting device to convert a wavelength of light generated from the semiconductor light emitting device, and a conductive adhesive layer comprising conductors configured to electrically connect the lower substrate to the semiconductor light emitting device and a body configured to surround the conductors, wherein the semiconductor light emitting device has a composition formula of InxAlyGa1-x-yN (0?x?1, 0?y?1, 0?x+y?1).

Abstract: A light emitting diode (LED) module includes a base that is conductive and is selectively covered with an insulative layer. The base can include a connecting flange and a light emitting region. Traces are provided on the insulative coating and can be used to connect LEDs positioned on the light emitting region to pads on the connecting flange. The connecting flange can be offset in angle and/or position from the base and can be configured to provide a contact shape suitable to mate with a connector in a polarized manner. The base can be shaped so as to provide the desired functionality.

Abstract: An electric field sensor having at least a first and second electrically conductive generally planar electrodes that are spaced apart from each other. A circuit is electrically connected to the electrodes which is configured to generate an output signal proportional to a time derivative of a varying electric field surrounding the electrodes. Optionally, three sets of spaced apart electrodes which are arranged perpendicularly relative to each other are used for three-dimensional measurements of the electric field.

Abstract: A method of fabricating and transferring a micro device and an array of micro devices to a receiving substrate are described. In an embodiment, an electrically insulating layer is utilized as an etch stop layer during etching of a p-n diode layer to form a plurality of micro p-n diodes. In an embodiment, an electrically conductive intermediate bonding layer is utilized during the formation and transfer of the micro devices to the receiving substrate.

Abstract: A light emitting diode (LED) package includes a light element, a light transferring layer disposed on the light element, a packaging layer enclosing the light transferring layer, a white wall surrounding the packaging layer and a diffusion film disposed on the packaging layer. The light transferring layer has a light outlet face, a light inlet face opposite to the light outlet face and a peripheral side. The light inlet face faces the light element. The white wall surrounds the peripheral side that is enclosed by the packaging layer.

Abstract: A semiconductor device includes a substrate, a semiconductor element, a terminal and a solder outflow prevention part. The semiconductor element is fixed on one side of the substrate via a first solder layer. The terminal that is fixed on the one side of the substrate via a second solder layer. The solder outflow prevention part is formed between the semiconductor element and the terminal in the one side of the substrate and is configured to prevent the first solder layer and the second solder layer from outflowing. A distance between the solder outflow prevention part and the semiconductor element is longer than a thickness of the first solder layer.

Abstract: Thin freestanding nitride veneers can be used for the fabrication of semiconductor devices. These veneers are typically less than 100 microns thick. The use of thin veneers also eliminates the need for subsequent wafer thinning for improved thermal performance and 3D packaging.

Abstract: A contact including an ohmic layer and a reflective layer located on the ohmic layer is provided. The ohmic layer is transparent to radiation having a target wavelength, while the reflective layer is at least approximately eighty percent reflective of radiation having the target wavelength. The target wavelength can be ultraviolet light, e.g., having a wavelength within a range of wavelengths between approximately 260 and approximately 360 nanometers.

Abstract: A light emitting diode-based bulb that includes a bracket and a housing translatably coupled with the bracket. The housing includes at least one light emitting diode (LED) unit disposed on a front face of the housing arranged to generate light in a direction away from the front face of the housing and a rear face of the housing with a heat sink thermally integrated into the housing. The heat sink including at least one heat dissipating member extending outwardly from the rear face of the housing to dissipate heat generated by the at least one light emitting diode (LED) unit. A fan is attached to the rear face of the housing, where the fan generates airflow that removes the heat generated by the least one light emitting diode unit.

Abstract: This optical receptacle has first optical surfaces via which light outputted by respective light-emitting elements is inputted, a second optical surface whereby light inputted via said first optical surfaces is outputted towards an end face of a light-transporting body, a third optical surface whereby light inputted via the first optical surfaces is reflected towards the second optical surface, a plurality of first concavities formed in the surface where the second optical surface is located, and a plurality of second concavities formed in the surface where the first optical surfaces are located or a surface opposite the surface where the first concavities are located. The first concavities and the second concavities are laid out opposite each other so that the central axes thereof coincide.

Abstract: A circuit substrate for carrying at least one light-emitting diode and a light-emitting structure for providing illumination are disclosed. The circuit substrate includes an insulation base layer, a conductive heat-dissipating layer, an insulation covering layer, a conductive circuit structure and a conductive through structure. The conductive heat-dissipating layer is disposed on the insulation base layer. The insulation covering layer is disposed on the conductive heat-dissipating layer. The conductive circuit structure includes a first electrode conductive layer and a second electrode conductive layer that are disposed on the insulation covering layer. The conductive through structure passes through the insulation covering layer and is connected between the conductive heat-dissipating layer and one of the first electrode conductive layer and the second electrode conductive layer.

Abstract: A resin-attached lead frame and a semiconductor device including the resin-attached lead frame. The resin-attached lead frame includes a lead frame main body having a die pad (LED element resting portion) and a lead portion disposed apart from the die pad. The lead frame main body further includes an LED element resting region formed over an area including an upper surface of the die pad and an upper surface of the lead portion. A reflecting resin section surrounds the LED element resting region of the lead frame main body. A vapor-deposited aluminum layer or a sputtered aluminum layer is provided on an upper surface of the LED element resting region of the lead frame main body.

Abstract: A molded resin body for surface-mounted light-emitting device has a cured resin body integrally molded with a plurality of leads and a concave portion to which the plurality of leads are exposed at the bottom portion, in which the ten-point average roughness (Rz) of the opening surface of the concave portion is 1 ?m to 10 ?m, the glass transition temperature of the cured resin body is 10° C. or higher and the glass transition temperature is a value measured using a thermomechanical analyzer (TMA) under the conditions of a temperature range of ?50 to 250° C., a temperature elevation rate of 5° C./min, and a sample size length of 1 to 5 mm, and the optical reflectance at 460 nm of the opening surface of the concave portion is 80% or more and the optical reflectance retention rate on the opening surface after heating the molded resin body at 180° C. for 72 hours is 90% or more.

Abstract: A semiconductor light-emitting device can include a wavelength converting layer including a surrounding portion, which covers at least one semiconductor light-emitting chip in order to emit various colored lights including white light. The semiconductor light-emitting device can include a substrate, a frame located on the substrate, the chip mounted on the substrate, a transparent material layer located on the wavelength converting layer so as to reduce from the wavelength converting layer toward a light-emitting surface thereof, and a reflective material layer disposed at least between the frame and both side surfaces of the wavelength converting layer and the transparent material layer.

Abstract: A low-voltage alternating current-based LED light with built-in cooling and automatic or manual dimming. As it is self-cooled with fan failure protection, the light can be safely run in conditions that are near-hostile to its operation, with little possibility of damage. The light is movable along the XY axes of a grid system and can be either fixed in position in the Z axis or can be movable up and down the Z axis. The light can be equipped with either manual dimming using a standard potentiometer, or with automatic dimming via sensors and local network connectivity. The device prevents line-voltage electric shocks as the input voltage is low-voltage AC; in embodiments, about the same voltage as a doorbell, and the input current is 3 A. The device is also self-cooled, and will shut down if its fan is not running so as to prevent thermal overloads.

Abstract: A semiconductor package includes a substrate having a groove in an upper surface. A semiconductor device is mounted on the substrate to cover one portion of the groove and leaving another portion exposed.

Abstract: An optoelectronic semiconductor component includes an optoelectronic semiconductor that is partly embedded into a shaped body, which is formed from a molding compound that at least partly covers at least two lateral faces and the rear surface of the optoelectronic semiconductor chip. A first contact layer and a second contact layer are arranged on the shaped body and are electrically connected to the optoelectronic semiconductor chip. A mounting face is arranged transversely in relation to the radiation passage face and is provided for mounting the optoelectronic semiconductor component.

Abstract: An LED based illumination device includes a plurality of LEDs that emit light through an output port of a housing. The LED based illumination device includes a heat sink that is in thermal contact with the plurality of LEDs. A peripheral electrical circuit board is configured to be contained within the housing, e.g., surrounding at least a portion of the heat sink. The peripheral electrical circuit board may include a radio frequency (RF) transceiver configured to communicate data between the LED based illumination device and another electronic device. A primary electrical circuit board may be electrically coupled to the peripheral electrical circuit board and electrically coupled to the plurality of LEDs.

Abstract: Embodiments provide a light emitting device including a substrate, a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, disposed on the substrate, a first electrode disposed on the first conductivity-type semiconductor layer, and a second electrode disposed on the second conductivity-type semiconductor layer. The first electrode includes an ohmic contact layer disposed on the first conductivity-type semiconductor layer and formed of a transparent conductive oxide and a reflective layer disposed on the ohmic contact layer, and the thickness of the ohmic contact layer is 1 nm or more and less than 60 nm.

Abstract: A light-emitting element comprises a first semiconductor layer, a first light-emitting structure and a second light-emitting structure on the first semiconductor layer, a first electrode on the first semiconductor layer, a second electrode on the first light-emitting structure, a first trench between the first light-emitting structure and the second light-emitting structure, exposing a first upper surface of the first semiconductor layer, and a second trench formed in the first light-emitting structure, exposing a second upper surface of the first semiconductor layer, wherein the first trench is devoid of the first electrode and the second electrode formed therein, wherein the first electrode is formed in the second trench.

Abstract: A high-quality light emitting device is provided which has a long-lasting light emitting element free from the problems of conventional ones because of a structure that allows less degradation, and a method of manufacturing the light emitting device is provided. After a bank is formed, an exposed anode surface is wiped using a PVA (polyvinyl alcohol)-based porous substance or the like to level the surface and remove dusts from the surface. An insulating film is formed between an interlayer insulating film on a TFT and the anode. Alternatively, plasma treatment is performed on the surface of the interlayer insulating film on the TFT for surface modification.

Abstract: A light emitting device in which a bonding pad is soldered to a mounting substrate, wherein the bonding pad may be formed in various shapes that can minimize the occurrence of voids during soldering or heat fusion.

Abstract: Embodiments provide a light emitting device module including a circuit board, a light emitting device bonded to a conductive layer on the circuit board via a conductive adhesive, a phosphor layer disposed on a side surface and an upper surface of the light emitting device, and a lens on the circuit board and the phosphor layer. A void is generated between the light emitting device and the circuit board.

Abstract: The present disclosure provides semiconductor devices and fabrication methods thereof. A stacked substrate includes an insulating layer between a substrate and a semiconductor layer. First openings are formed in the semiconductor layer to define a first distance between adjacent sidewalls of adjacent first openings. Spacers are formed on sidewall surfaces of each first opening. Second openings corresponding to the first openings are formed through the insulating layer and into the substrate. The sidewall surfaces of the substrate in the second openings are etched to define a second distance between adjacent substrate sidewalls of adjacent etched second openings. The second distance is shorter than the first distance. An isolation layer is formed in the first and second openings. Conductive structures are formed on the semiconductor layer on both sides of a gate structure formed on the semiconductor layer. The conductive structures penetrate through the isolation layer and into the substrate.

Abstract: A light source may comprise a thermally conductive frame comprising a base and a faceted portion extending from the base. The faceted portion may comprise a plurality of facets spaced circumferentially thereabout. Additionally, a hollow passageway may extend through the base and axially through the faceted portion. A plurality of LED chips may be arranged on the plurality of facets to provide an emission of light in an arc of 360 degrees.

Abstract: The present disclosure provides an optical system including a TIR mother lens and a secondary output lens, preferably for efficiently distributing light out of an LED track lighting system. The optical system of the present disclosure is configured to create variant beam angles from a lens assembly using the same TIR lens. Preferably, by altering the dimensions and focal lengths of the secondary output lens in a single TIR lens, the optical system can create a variety of beam angles, including, but not limited to, Spot (“SP”), Narrow Flood (“NFL”), Flood (“FL”), or Wide Flood (“WFL”) beam angles.

Abstract: An LED module includes a mount board and an LED chip. The mount board includes: an insulation substrate that includes resin and glass; a first conductor, a second conductor and a third conductor; and a white resist layer. The white resist layer is provided with a first opening, a second opening and at least one third opening for exposing the first conductor, the second conductor and the third conductor, respectively. The LED module further includes a wavelength conversion layer disposed between the LED chip and the third conductor in a thickness direction of the LED chip. The wavelength conversion layer includes phosphor particles that are excited by first light emitted from the LED chip to emit second light having wavelengths greater than wavelengths of the first light.

Abstract: A light-emitting element includes a semiconductor stacked body, a light transmissive conductive film disposed on the semiconductor stacked body, the light transmissive conductive film including a plurality of through holes, insulation films disposed in the plurality of through holes, the plurality of through holes being disposed on the semiconductor stacked body; and a pad electrode disposed on the light transmissive conductive film and the insulation films.

Abstract: Embodiments are related to integrated circuit (IC) fabrication and, more particularly, to a fluidic assembly process for the placement of light emitting diodes on a direct-emission display substrate.

Abstract: A light-emitting element, a light-emitting element unit and a light-emitting element package are provided, which are each reduced in reflection loss and intra-film light absorption by suppressing multiple light reflection in a transparent electrode layer and hence have higher luminance. The light-emitting element 1 includes a substrate 2, an n-type nitride semiconductor layer 3, a light-emitting layer 4, a p-type nitride semiconductor layer 5, a transparent electrode layer 6 and a reflective electrode layer 7, and the transparent electrode layer 6 has a thickness T satisfying the following expression (1): 3 ? ? 4 ? n + 0.30 × ( ? 4 ? n ) ? T ? 3 ? ? 4 ? n + 0.45 × ( ? 4 ? n ) ( 1 ) wherein ? is the light-emitting wavelength of the light-emitting element 4, and n is the refractive index of the transparent electrode layer 6.

Abstract: Disclosed is a light emitting diode (LED) having improved light extraction efficiency. The LED includes a light emitting structure positioned on a substrate and having a first semiconductor layer, an active layer and a second semiconductor layer. A first electrode pad is electrically connected to the first semiconductor layer. A second electrode pad is positioned on the substrate. An insulating reflective layer covers a portion of the light emitting structure, and is positioned under the second electrode pad, so that the second electrode pad is spaced apart from the light emitting structure. At least one upper extension is connected to the second electrode pad to be electrically connected to the second semiconductor layer. Further, a pattern of light extraction elements is positioned on the second semiconductor layer.

Abstract: A light emitting diode module includes a substrate, a first soldering section, a second soldering section, a block and a light emitting diode die. The substrate has a top surface and includes a circuit structure. The block is formed on the top surface. The soldering section and the second solder section are formed on the top surface of the substrate and electrically connected with the circuit structure. The block is positioned between the first soldering section and the second solder section. A height of the block is larger than thicknesses of the first soldering section and the second soldering section. The light emitting diode die includes a first electrode and a second electrode being respectively electrically connected to the first soldering section and the second soldering section. The block is positioned between the first soldering section and the second soldering section.

Abstract: There are provided a chip-on-board type light emitting device package capable of improving structural reliability and heat-dissipating efficiency and reducing a manufacturing cost, and a method for manufacturing the same. The chip-on-board type light emitting device package includes: a dual frame including a base frame on which a plurality of light emitting devices are mounted and an electrode frame positioned above the base frame so as to be spaced apart from the base frame and including two electrodes separated from each other; and a molding part coupled to the dual frame so that the base frame and the electrode frame are spaced apart from each other and having an opening through which light generated in the plurality of light emitting devices is to be emitted, wherein the base frame has a through-hole through which the electrode frame is exposed.

Abstract: An amplifier module having a surface-mounting carrier with a base and lid is disclosed. The base in a top surface thereof provides a die pad on which a transistor is mounted, and a back surface thereof provides a back pad electrically and thermally connected to the die pad. The back pad has an area wider than the area of the die pad. The heat conduction from the transistor to the host board on which the amplifier module is mounted is effectively enhanced.

Abstract: A package and a light emitting device with which production of burrs can be suppressed, and methods of manufacturing the package and the light emitting device easily are provided. A package includes a pair of lead electrodes made of metal plates and a resin molded body. A recess portion for mounting a light emitting element is formed. The pair of lead electrodes are exposed on a bottom surface of the recess portion. At least one of the pair of lead electrodes includes a groove portion that is formed on the metal plate and along a periphery of a surface of the metal plate exposed on a bottom surface of the recess portion.

Abstract: The light-emitting element provides: a light-emitting structure, which comprises a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer. A first electrode is disposed under a first region under the light-emitting structure and electrically connected to the second conductive semiconductor layer; a second electrode disposed under a second region under the light-emitting structure and electrically connected to the first conductive semiconductor layer. A connection electrode is connected the second electrode with the first conductive semiconductor layer. An insulating layer is disposed between the first and second electrodes; a first protective layer is disposed around the lower circumference of the light-emitting structure; and a second protective layer is disposed between the insulating layer and the light-emitting structure.

Abstract: Disclosed are a light emitting device package. The light emitting device package includes a body having recess; a first lead frame including a first and second portions on a first region of the body; a second lead frame including a third and fourth portions on a second region of the body; a third lead frame between the first and second lead frame. The body has a length of the first direction greater than a width of the second direction, wherein the second portion of the first lead frame extends toward the second lead frame and has a small width, and wherein the fourth portion of the second lead frame extends toward the first lead frame. A first light emitting device is disposed on the first portion of the first lead frame and a second light emitting device is disposed on the third portion of the second lead frame.

Abstract: Disclosed is a light-emitting diode with an n-type graded buffer layer and a manufacturing method therefor. An epitaxial structure of a light-emitting diode comprises: a growth substrate; an n-type graded buffer layer located on the growth substrate; an n-type limiting layer (231) located on the n-type graded buffer layer; an active layer (232) located on the n-type limiting layer (231); and a p-type limiting layer (233) located on the active layer (232). A buffer layer is converted into an n-type graded buffer layer by means of an ion implantation method, and is applied to a light-emitting diode chip of a vertical structure while ensuring that a high-quality epitaxial structure is obtained, thereby being able to effectively reduce the contact resistance.

Abstract: An LED driver circuit includes a primary circuit and a circuit electrically isolated from the primary circuit, a transformer having a primary winding configured to receive power from an alternating current source and to generate power in a first secondary winding configured to provide power to the electrically isolated circuit, and to generate power in a second secondary winding configured to provide power to the primary circuit, and a conductor connected to an end of the first secondary winding and configured to connect a winding driver signal to the first secondary winding to generate power in the second secondary winding.

Abstract: A liquid crystal display device which includes a pair of substrates, a pixel including a liquid crystal element between the pair of substrates, a lighting portion provided on the outer side of the pair of substrates, a first polarizing member between the pair of substrates and the lighting portion, a reflective member provided outside the lightning portion, a second polarizing member on a side opposite to the first polarizing member with the pair of substrates provided therebetween, and a first optical sensor and a second optical sensor. The first optical sensor has a function of detecting illuminance of external light, and the second optical sensor has a function of detecting a color tone of polarized light emitted from the pixel portion. The lightning portion can emits light having a predetermined wavelength depending on the color tone of the pixel portion which is detected by the second optical sensor.

Abstract: A semiconductor light emitting device includes first and second light emitting bodies, a first electrode, a second electrode and a first interconnection. The first and second light emitting bodies are disposed on a conductive substrate, and each includes first and second semiconductor layers and a light emitting layer therebetween. The first electrode is provided between the first light emitting body and the conductive substrate, and electrically connected to a first semiconductor layer and the conductive substrate. The second electrode is provided between the second light emitting body and the conductive substrate, and electrically connected to a first semiconductor layer. The first interconnection electrically connects the second semiconductor layer of the first light emitting body and the second electrode. The first interconnection includes a first portion extending over the first and second light emitting bodies and a second portion extending into the second light emitting body.

Abstract: A method of fabricating a composite integrated optical device includes providing a substrate comprising a silicon layer, forming a waveguide in the silicon layer, and forming a layer comprising a metal material coupled to the silicon layer. The method also includes providing an optical detector, forming a metal-assisted bond between the metal material and a first portion of the optical detector, forming a direct semiconductor-semiconductor bond between the waveguide, and a second portion of the optical detector.

Abstract: High-voltage solid-state transducer (SST) devices and associated systems and methods are disclosed herein. An SST device in accordance with a particular embodiment of the present technology includes a carrier substrate, a first terminal, a second terminal and a plurality of SST dies connected in series between the first and second terminals. The individual SST dies can include a transducer structure having a p-n junction, a first contact and a second contact. The transducer structure forms a boundary between a first region and a second region with the carrier substrate being in the first region. The first and second terminals can be configured to receive an output voltage and each SST die can have a forward junction voltage less than the output voltage.

Abstract: A light emitting device includes a light emitting element and a package. The package includes a first lead frame, a second lead frame, and a resin. The first lead frame has a first surface on which the light emitting element is provided. The first lead frame has a first overlap portion. The second lead frame is spaced apart from the first lead frame and has a second overlap portion. The first overlap portion and the second overlap portion overlap at an overlap position so that the first lead frame extends from the overlap position toward a first direction and a second direction opposite to the first direction and so that the second lead frame extend from the overlap position toward a third direction and a fourth direction opposite to the third direction as viewed along a line substantially perpendicular to the first surface.