Abstract: The present invention provides a package component of an Organic Light Emitting Diode (OLED) device and a package method thereof, and a display device. A first blocking layer covers the OLED device. A side of the first blocking layer far away from the OLED device includes a first pattern region and a second pattern region alternately set along a predetermined direction, and thickness of the first blocking layer at the first pattern region is smaller than that at the second pattern region.

Abstract: Solid state lighting (“SSL”) devices with improved contacts and associated methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes an SSL structure having a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The SSL device also includes a first contact on the first semiconductor material and a second contact on the second semiconductor material, where the first and second contacts define the current flow path through the SSL structure. The first or second contact is configured to provide a current density profile in the SSL structure based on a target current density profile.

Abstract: A light emitting device is disclosed. The light emitting device includes a light emitting structure including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer, a light-transmissive conductive layer disposed on the second conductive-type semiconductor layer and having a plurality of open regions through which the second conductive-type semiconductor layer is exposed, and a second electrode disposed on the light-transmissive conductive layer so as to extend beyond at least one of the open regions, wherein the second electrode contacts the second conductive-type semiconductor layer in the open regions and contacts the light-transmissive conductive layer in regions excluding the open regions.

Abstract: A light emitting package base structure includes a carrier, a light emitting chip, a light transmission unit and a dam. The carrier has a supporting surface and an outer surface surrounding the supporting surface. The light emitting chip is disposed on the supporting surface and electrically connected to the carrier. The light transmission unit is disposed on the carrier and has a through hole. The dam is disposed between the carrier and the light transmission unit, and a hermetic receiving space is formed between the dam, the light transmission unit and the carrier. The light emitting chip is located in the hermetic receiving space and the dam has a side surface away from the hermetic receiving space. A gap is formed between the side surface and the outer surface, and the through hole is corresponded to a location between the side surface and the outer surface.

Abstract: A display apparatus includes a driving substrate, a plurality of light-emitting devices, and a plurality of metal common electrodes. The light-emitting devices are dispersedly disposed on the driving substrate, and each of the light-emitting devices includes an epitaxial structure and a first type electrode and a second type electrode disposed on the epitaxial structure. The metal common electrodes are dispersedly disposed on the driving substrate and in contact with a portion of the second type electrode of each of the light-emitting devices to form an ohmic contact.

Abstract: A semiconductor light-emitting device may include an emission structure, a protection pattern layer on a limited region of the emission structure, and an insulating pattern layer on the emission structure. The protection pattern layer may expose a separate remaining region of the emission structure, and the first insulating pattern layer may cover at least the remaining region of the emission structure. The insulating layer may include an opening that exposes at least a portion of a surface of the protection pattern layer, such that the emission structure remains covered by at least one of the insulating layer and the protection pattern layer.

Abstract: A light-emitting device includes lead frames, a light-emitting element placed on a bottom of a recessed portion formed at one of the lead frames, and a light-transmitting resin covering the light-emitting element. The lead frames have a covered region which is covered with the light-transmitting resin and an exposed region exposed out of the light-transmitting resin. The light-emitting device has a gap between the lead frame and the light-transmitting resin at an inner side surface of the recessed portion, the gap having a width longer than a main wavelength of light from the light-emitting element. The lead frame is in close contact with the light-transmitting resin at an end of the covered region, which is located in a boundary with the exposed region or in the vicinity of the boundary within the covered region.

Abstract: What is specified is: an optoelectronic semiconductor component (1) comprising a carrier (5) and a semiconductor body (2), wherein the semiconductor body is fastened on the carrier and has a semiconductor layer sequence having an active region (20) provided for generating and/or receiving radiation, a first semiconductor layer (21) and a second semiconductor layer (22). The active region is arranged between the first semiconductor layer and the second semiconductor layer. The carrier is electrically conductive and is divided into a first carrier body (51) and a second carrier body (52), wherein the first carrier body and the second carrier body are electrically insulated from one another. The first carrier body has a first external contact (61) of the semiconductor component on the side remote from the semiconductor body, wherein the first contact is electrically conductively connected to the first semiconductor layer via the first carrier body.

Abstract: Disclosed are a light emitting device package and a lighting apparatus. The light emitting device package includes a substrate, a light emitting structure disposed under the substrate and including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a first electrode connected to the first conductive type semiconductor layer exposed through at least one contact hole, a second electrode connected to the second conductive type semiconductor layer, a first insulating layer configured to extend from under the light emitting structure to a space between a side of the light emitting structure and the first electrode and configured to reflect light, and a reflective layer disposed under the first insulating layer.

Abstract: A heat dissipation unit of handheld electronic device is applied to and assembled with a handheld electronic device. The heat dissipation unit includes a main body having a heat absorption section and a heat dissipation section respectively disposed on two sides of the main body. The heat absorption section is made of ceramic material. The heat dissipation section is a heat dissipation conductor. The heat absorption section and the heat dissipation section are respectively correspondingly positioned in the handheld electronic device and outside the handheld electronic device. The heat generated inside the handheld electronic device can be quickly conducted from the ceramic-made heat absorption section to the heat dissipation section and then conducted from the heat dissipation section to outer side of the handheld electronic device. Accordingly, the lifetime of the handheld electronic device is prolonged and the efficiency of the handheld electronic device is enhanced.

Abstract: A light emitting device includes a light emitting element on a substrate, and a lens element that includes a cavity within which the light emitting element is situated, and is optically aligned with the light emitting element. A strip of adhesive that attaches the lens element to the substrate substantially surrounds the light emitting element, but includes a gap that facilitates release of material from the cavity during the attachment of the lens element to the substrate. When the lens element is placed upon the substrate, the adhesive is partially cured to provide a relatively high shear strength before the light emitting device is transported or subjected to other processes. To provide compatibility with subsequent processes or applications, and to protect the light emitting element from the environment, the gap in each device is sealed with a sealing material.

Abstract: A light emitting diode (LED) module includes a base that is conductive and is selectively covered with an insulative layer. The base can include a connecting flange and a light emitting region. Traces are provided on the insulative coating and can be used to connect LEDs positioned on the light emitting region to pads on the connecting flange. The connecting flange can be offset in angle and/or position from the base and can be configured to provide a contact shape suitable to mate with a connector in a polarized manner. The base can be shaped so as to provide the desired functionality.

Abstract: The disclosure provides a silicone resin film comprising a release substrate and a silicone resin coating layer formed by coating a curable silicone resin composition on the release substrate and curing the curable silicon resin composition, wherein the silicone resin composition comprises 10 to 25 parts by weight of linear polysiloxane; 40 to 55 parts by weight of a first silicone resin wherein the first silicone resin have at least following siloxane units represented by the general formulas: R1SiO3/2 and a R22SiO2/2, wherein the molar fraction of R1SiO3/2 unit is present in the range of 0.60 to 0.75 in the general formula; 15 to 30 parts by weight of a second silicone resin; 15 to 25 parts by weight of a Si—H containing polysiloxane; a platinum group metal catalyst and phosphor powder.

Abstract: A light emitting device in which a bonding pad is soldered to a mounting substrate, wherein the bonding pad may be formed in various shapes that can minimize the occurrence of voids during soldering or heat fusion.

Abstract: Textured optoelectronic devices and associated methods of manufacture are disclosed herein. In several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.

Abstract: Disclosed is a micro display. Each of display portions constituting the micro display includes an individual active layer and p-type semiconductor layer which are on each of a plurality of n-type semiconductors which are each configured in a line form. Consequently, a plurality of light emitting structures are formed on a common n-type semiconductor provided in a form of a single string, and a crossbar structure in which a positive electrode pattern perpendicular to a disposition direction of the common n-type semiconductor is disposed is formed. As a result, a micro display in which a plurality of light emitting structures can be individually controlled can be realized.

Abstract: A lighting device for a motor vehicle that includes one or more electronic circuits incorporating electronic components sensitive to an electrostatic discharge. The electronic components are protected by encouraging the controlled flow to ground of any electrostatic discharges. All portions of one or more electronic circuits can therefore be protected by preventing random electrostatic discharges liable to destroy or to degrade sensitive electronic components.

Abstract: In various embodiments, an optoelectronic component device is provided. The optoelectronic component device may include a linear regulator designed for providing an electric current; an optoelectronic component formed for converting the electric current into an electromagnetic radiation; and an electrothermal transducer designed for converting the electric current into a temperature difference. The electrothermal transducer is thermally coupled to the optoelectronic component, and the optoelectronic component and the electrothermal transducer are electrically coupled in series with the linear regulator.

Abstract: A light emitting diode (LED) module including: a circuit board; at least one LED disposed on the circuit board; a molding cover spaced apart from the LED by a predetermined gap and covering upper and lower surfaces of the circuit board at an edge of the circuit board; and a circuit part positioned at the edge of the circuit board and driving the LED. The LED is centrally disposed on an upper surface of the circuit board.

Abstract: In one embodiment, a display device comprises: a substrate including an emissive area that emits light and a non-emissive area that does not emit light; a transistor over the substrate; a light emitting device over the transistor, the light emitting device including a first electrode, a light emitting layer on the first electrode, and a second electrode on the light emitting layer; a contact hole in the emissive area of the substrate, the contact hole positioned between the transistor and the light emitting device; and an auxiliary electrode in the contact hole, the auxiliary electrode electrically connecting together the first electrode of the light emitting device and the transistor.

Abstract: Provided is a package device, relating to the technical field of lamp beads. The package device comprises an SMD holder, wherein the SMD holder is a hollow housing with one end opened; and the material of sidewalls of the SMD holder is transparent plastic. In the package device provided by the present invention, a transparent material is provided as the material of the sidewalls of the SMD holder, and light generated after a chip is powered on can be partially transmitted out through the sidewalls of the SMD holder, avoiding blocking of the light generated after the chip is powered on by the sidewalls of the SMD holder, thereby increasing transmittance of light from the chip.

Abstract: A light emitting device includes a first bonding pad configured to be mounted to a substrate, a first electrode electrically connected to the first bonding pad, a first conductive type semiconductor layer having a middle area disposed between two, opposing end areas, a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer and connected to the first electrode; and a first contact portion and a plurality of second contact portions disposed on the first conductive type semiconductor layer, in which the first contact portion is disposed adjacent one end area of the first conductive type semiconductor layer, the second contact portions are disposed in the middle area of the first conductive type semiconductor layer, and the first bonding pad exposes at least one of the second contact portion.

Abstract: Exemplary embodiments provide a light emitting diode that includes: at least one lower electrode providing a passage for electric current; a light emitting structure placed over the at least one lower electrode to be electrically connected to the lower electrode, the light emitting structure is disposed to form at least one via-hole; a reflective electrode layer placed between the at least one lower electrode and the light emitting structure; and an electrode pattern formed around the light emitting structure and electrically connecting the lower electrode to the light emitting structure through the via-hole.

Abstract: A light-emitting diode package structure, a light-emitting device and a method of making the same are provided. The light-emitting diode package structure includes an insulating base, a first conductive unit, a second conductive unit and at least one light-emitting diode chips. The first conductive unit is disposed on the insulating base. The second conductive unit is disposed on the insulating base and separated from the first conductive unit. The at least one light-emitting diode chips is electrically connected to the first conductive unit and the second conductive unit. Further, the first conductive unit has a first groove, and an outer surface thereof is divided by the first groove into two separated parts. In addition, the second conductive unit has a second groove, and the outer surface thereof is divided by the second groove into two separated parts.

Abstract: Embodiments regard micro-size devices formed by etch of sacrificial epitaxial layers. An embodiment of a method includes forming a plurality of epitaxial layers on a sapphire crystal, wherein the epitaxial layers include a buffer layer on the sapphire crystal, a sacrificial layer above the buffer layer, and one or more device layers above the sacrificial layer; etching to singulate the semiconductor devices, the etching being through the one or more device layers and wholly or partially through the sacrificial layer; electrochemical etching of the sacrificial layer; and lift-off of one or more semiconductor devices from the buffer layer.

Abstract: A chip package circuit board module includes a circuit board and an original chip. The circuit board includes a first pad and a second pad disposed besides the first pad and separated from the first pad. The original chip is connected to the first pad and the second pad. A width of the original chip is W1, a total width of the first pad is P1, and a total width of the second pad is P2. The total width P1 of the first pad is larger than twice of the width W1 of the original chip, and the total width P2 of the second pad is larger than twice of the width W1 of the original chip.

Abstract: A light-emitting device includes: a rectangular shape with a 1st side, a 2nd side opposite to the 1st side, and a 3rd side connecting the 1st and the 2nd sides; a first electrode pad formed adjacent to the 3rd side; a second electrode pad formed adjacent to the 2nd side; a first extension electrode, extending from the first electrode pad in a direction away from the 3rd side and bended toward the 2nd side; and a second extension electrode, including a first and a second branches respectively extending from the second electrode pad; wherein a distance between the first electrode pad and the 3rd side is smaller than a distance between the second electrode pad and the 3rd side; wherein an end portion of the first branch includes a first arc bending to the 3rd side and a minimum distance between the first branch and the 1st side is smaller than a minimum distance between the second branch and the 1st side.

Abstract: An exemplary embodiment of the present invention comprises: 1) forming a crystalline transparent conducting layer on a substrate; 2) forming an amorphous transparent conducting layer on the crystalline transparent conducting layer; 3) forming at least one pattern open region so as to expose a part of the crystalline transparent conducting layer by patterning the amorphous transparent conducting layer; and 4) forming a metal layer in the at least one pattern open region.

Abstract: A light emitting device includes a light emitting unit, a light transmissive layer and an encapsulant. The light emitting unit includes a substrate, an epitaxial structure layer disposed on the substrate, and a first electrode and a second electrode disposed on the same side of the epitaxial structure layer, respectively. The light emitting unit is disposed on the light transmissive layer and at least a part of the first electrode and a part of the second electrode are exposed by the light transmissive layer. The encapsulant encapsulates the light emitting unit and at least exposes a part of the first electrode and a part of the second electrode. Each of the first electrode and the second electrode extends outward from the epitaxial structure layer, and covers at least a part of an upper surface of the encapsulant, respectively.

Abstract: A method of making a semiconductor device is provided including forming a first opening and a second opening in a first surface of a substrate. A conductive material is formed in the first opening and in the second opening and over the first surface in the first region of the substrate between the openings. A thickness of the substrate may be reduced from a second surface of the substrate, opposite the first surface, to a third surface opposite the first surface which exposes the conductive material in the first opening and the conductive material in the second opening. A light emitting diode (LED) device is connected to the third surface of the substrate.

Abstract: A method for manufacturing a light emitting device includes: preparing an intermediate body including a plurality of light emitting elements spaced apart from each other, each of the light emitting elements having a pair of electrodes disposed on the same side, and a covering member covering side surfaces of the light emitting elements while a part of a surface of each of the electrodes is exposed from the covering member, the covering member having a recess between adjacent ones of the light emitting elements; forming a metal layer that continuously covers the surface of each of the electrodes of the light emitting elements and an inner surface of the recess of the covering member; and cutting the metal layer and the covering member at the inner surface of the recess.

Abstract: A light source includes: a mounting substrate; and a side-view type light-emitting device including: a substrate; through holes; a front electrode; a rear electrode; side electrodes; and a light-emitting element, wherein: land patterns are formed on a front surface of the mounting substrate, in positions corresponding to the through holes, each land pattern having an inverted “T” shape composed of a narrow region and a wide region; the light-emitting device is arranged such that the cross sectional shape of the through hole in the long side direction of the substrate is aligned with the shape of the narrow region of the land pattern, in a plan view; and solder members are formed in a wall shape on the mounting substrate, are formed in the through holes on the mounting substrate, and connects the rear electrode and the side electrode to the wide region and the narrow region, respectively.

Abstract: A light emitting device according to an embodiment comprises: a light emitting structure including a first conductive semiconductor layer, an active layer disposed under the first conductive semiconductor layer, and a second conductive semiconductor layer disposed under the active layer; a protective layer disposed above the light emitting structure and including a through region; a first electrode disposed in the through region and electrically connected to the first conductive semiconductor layer; an electrode pad electrically connected to the first electrode, and having a first region disposed on the first electrode and a second region disposed on the protective layer; and a second electrode electrically connected to the second conductive semiconductor layer.

Abstract: A method of manufacturing a light-emitting apparatus includes mounting a first light-emitting element and a second light-emitting element on a substrate. A sealing layer is formed above the first light-emitting element and the second light-emitting element for sealing the first light-emitting element and the second light-emitting element. A first phosphor layer is applied above a first portion of the sealing layer, in which the first phosphor layer includes at least one first phosphor. A second phosphor layer is applied above a second portion of the sealing layer, in which the second phosphor layer includes at least one second phosphor.

Abstract: A photovoltaic junction box comprising a diode module and a circuit board disposed in a box body, and a heat sink mounted on the outer surface of the box body. The diode module is attached to the back side of the heat sink and is electrically connected to cooper conductor. The heat sink is made of aluminum material and a heat-absorbing layer is provided inside the heat sink. The heat-absorbing layer is close to the diode module. The aluminum heat sink provides great thermal conductivity, therefore, can greatly increase the cooling capacity of the junction box. In addition, because metal material for higher temperature resistance is used instead of lower temperature resistance plastic material, the box body would not deform as easy, greatly increase the safety and reliability of the junction box.

Abstract: An optoelectronic component includes a housing, wherein a cavity is formed on an upper side of the housing, which is delimited by a wall, the housing has an empty space, the wall is arranged between the cavity and the empty space, the housing has a surface, the empty space is arranged between the surface of the housing and the wall, the wall and the surface are arranged at least partially parallel to each other, the wall includes an optically transparent material, and the wall has a wall thickness of 1 ?m to 100 ?m.

Abstract: Techniques for integrating spalling into layer transfer processes involving optical device semiconductor materials are provided. In one aspect, a layer transfer method for an optical device semiconductor material includes forming the optical device semiconductor material on a first substrate; depositing a metal stressor layer on top of the optical device semiconductor material; attaching a first handle layer to the metal stressor layer; removing the optical device semiconductor material from the first substrate by pulling the first handle layer away from the first substrate; attaching a second handle layer to the optical device semiconductor material; removing the first handle layer from the stack; and forming a second substrate on the stressor layer. Vertical LED devices and techniques for formation thereof are also provided.

Abstract: Provided is a laser beam irradiation apparatus. The laser beam irradiation apparatus includes a laser source configured to emit light; a collimator configured to collimate the emitted light; a scanner configured to adjust the collimated light to change an irradiation direction thereof; a first lens part configured to focus the adjusted light to irradiate a laser beam on a sealing part; a camera configured to receive visible light passing through the scanner; a heat sensing part configured to receive infrared (IR) light passing through the scanner; and a control part configured to control a moving direction and an intensity of the laser beam.

Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence with an upper face and a lower face opposite the upper face, wherein the semiconductor layer sequence has an active layer that generates electromagnetic radiation, and a plurality of contact elements that electrically contact the semiconductor layer sequence arranged on the upper face, wherein the semiconductor chip is a thin-film semiconductor chip, the lower face is a radiation decoupling surface through which the radiation generated in the semiconductor layer sequence is decoupled, the contact elements can be electrically actuated individually and independently from one another, and the semiconductor layer sequence has a thickness of at most 3 ?m.

Abstract: A method of processing an engineered substrate structure includes providing an engineered substrate structure including a polycrystalline substrate and an engineered layer encapsulating the polycrystalline substrate, forming a sacrificial layer coupled to the engineered layer, joining a solid state device structure to the sacrificial layer, forming one or more channels in the solid state device structure by removing one or more portions of the solid state device structure to expose one or more portions of the sacrificial layer, flowing an etching chemical through the one or more channels to the one or more exposed portions of the sacrificial layer, and dissolving the sacrificial layer by interaction between the etching chemical and the sacrificial layer, thereby separating the engineered substrate structure from the solid state device structure.

Abstract: An electronic device display may have a color filter layer, a thin-film-transistor layer, and a layer of liquid crystal material. The display may have a display cover layer such as a layer of glass or plastic. Adhesive may be used to attach the upper polarizer to the display cover layer. The thin-film transistor layer may have a substrate with upper and lower surfaces. Thin-film-transistor circuitry may be formed on the upper surface. A display driver integrated circuit may be mounted to the lower surface or a flexible printed circuit and may be coupled to the thin-film-transistor circuitry using wire bonding wires. Through vias that are formed through the thin-film-transistor layer substrate may be used in coupling the thin-film-transistor circuitry to the display driver integrated circuit.

Abstract: The composite substrate includes: a lead frame including one or more pairs of support leads, each of the one or more pairs of support leads including a first support lead and a second support lead; and one or more packages supported by first and second support leads and including a resin molded body. The resin molded body includes: a first outer side surface; a second outer side surface; a third outer side surface; a fourth outer side surface; a front surface; a first recess; a second recess; a third recess disposed at a bottom surface of the first recess; and a fourth recess disposed at a bottom surface of the second recess. The first support lead is fitted into the first recess and the third recess, and the second support lead is fitted into the second recess and the fourth recess.

Abstract: A device includes an electrical circuit having one or more parallel layers and one or more electronic components of a switching circuit configured to operate at one or more frequencies mounted to several layers of the electrical circuit. Wire traces electrically connecting the one or more electronic components have cutouts with predetermined patterns and dimensions formed along edges where AC current flow is concentrated to increase an effective edge length of the wire traces to reduce oscillation and heat loss of the traces.

Abstract: An optoelectronic component includes a carrier strip and an optoelectronic semiconductor chip, a first electrical connection surface formed on a front side of the chip and a second electrical connection surface is formed on a rear side of the chip, first and second electrically conductive contact regions are formed on the strip, the first region is arranged on a folding section of the strip, the rear side of the chip faces toward an upper side of the strip, the upper side faces toward the front side of the chip, the first electrical connection surface electrically conductively connects to the first region, the second electrical connection surface electrically conductively connects to the second region by a second connecting material, the strip has a second through-opening that lies next to the second region, and the second connecting material extends through the second contact opening to a lower side of the strip.

Abstract: An organic light-emitting display device includes a substrate defining an emission area and a non-emission area; an insulating layer on the substrate and having at least two grooves being defined at a portion of the insulating layer corresponding to the non-emission area; a first electrode on the insulating layer at a portion of the insulating layer corresponding to the emission area; an auxiliary electrode on the insulating layer and spaced apart from the first electrode, the auxiliary electrode being on at least a portion of the insulating layer having the at least two grooves; a bank pattern on portions of the first and auxiliary electrodes; a barrier on the auxiliary electrode and separated from the bank pattern, the barrier being formed of a same material as the bank pattern; an organic light-emitting layer on the first electrode; and a second electrode on the organic light-emitting layer.

Abstract: An assembly is provided that includes a ceramic converter for converting light having a first wavelength into light having a second wavelength, a metal-containing reflective coating, and a cooling element. The surface of the ceramic converter is at least partly coated with the metal-containing reflective coating. The coating dissipates the heat from the converter into the cooling element. The cooling element and the metal-containing reflective coating are connected to one another by a metallic solder connection.

Abstract: A semiconductor device includes a mounting substrate with a land having a first surface and a second surface higher than the first surface, a side-emission type light emitting device including an external connecting terminal disposed on the first surface, and a bonding member disposed at least on the second surface to bond the external connecting terminal and the land.

Abstract: A display apparatus includes a flexible substrate, a light-emitting diode (LED), and a partitioning wall pattern. The flexible substrate includes a concavo-convex portion. The flexible substrate has a first elasticity. The LED is disposed on the concavo-convex portion. The partitioning wall pattern substantially surrounds the LED at a predetermined distance from the LED in a plan view. The partitioning wall pattern has a second elasticity less than the first elasticity.

Abstract: A component with a semiconductor body, and first and second metal layer is disclosed. The first metal layer is arranged between the semiconductor body and the second metal layer, the semiconductor body has a first semiconductor layer on a side which is averted from the first metal layer, a second semiconductor layer on a side facing towards the first metal layer, and an active layer arranged between the first semiconductor layer and the second semiconductor layer, the component has a through-connection, which extends through the second semiconductor layer and the active layer for the electrical bonding of the first semiconductor layer. The second metal layer has a first subregion electrically connected to the through-connection by the first metal layer, and a second subregion spaced apart laterally from the first subregion by an intermediate space. In an overhead view, the first metal layer laterally completely covers the intermediate space.

Abstract: An RGB LED uses three leads instead of four. The three RGB semiconductor chips are all connected to a common lead where they are held. One of the three RGB semiconductor chips is connected, in conventional fashion, to a second lead. The other two of the three RGB semiconductor chips are alternately connected to a third lead and wired so that only one will work at a time, depending upon whether a positive or negative current is applied. A controller controls the direct and alternating current applied to the three RGB semiconductor chips to produce the desired combined color for the RGB LED.