Abstract: A three-dimensional object (1) made by way of a stereolithography process, includes a plurality of supports (3) that are connected to the body (2) of the object through joining elements (4) in each one of which it is possible to identify a shaped area (5), recessed with respect to the external surface of the joining element (4) and having the bottom corner (6) that delimits a pre-established fracture area (7) for the detachment of the support (3). Each one of the joining elements (4) includes a first body (8) projecting from the external surface that delimits the body (2) of the object and a second body (9) projecting from the support (3), the bodies (8) and (9) being connected to each other so as to define the shaped area (5) whose bottom corner (6) delimits the pre-established fracture area (7). Each one of the bodies (8, 9) has its convex curved external surface that constitutes part of the external surface of a sphere or an ellipsoid.

Abstract: A carrier substrate includes a first major face and a second major face opposite the first major face. A diode structure is formed between the first major face and the second major face, which diode structure electrically insulates the first major face from the second major face at least with regard to one polarity of an electrical voltage.

Abstract: Provided are a light emitting device, a light emitting device package and a lighting system including the same. The light emitting device (LED) comprises a substrate, a 5 second conductive type semiconductor layer, an active layer, a first conductive type semiconductor layer and a first electrode. The vertical distances between the first conductive type semiconductor layer and the second conductive type semiconductor layer are varied.

Abstract: A light emitting device includes an electrically conductive member, a light emitting element, a wire, and a sealing member. The wire contains gold and silver and connects the electrically conductive member and the light emitting element. The wire includes a ball portion and a recrystallized region. The ball portion is provided on an electrode of the light emitting element. The recrystallized region is provided on the ball portion and has a length in a range of 50 ?m to 90 ?m. The sealing member has a lower surface and an upper surface opposite to the lower surface and covers the light emitting element and the wire so that the lower surface faces the electrically conductive member and the light emitting element and so that a distance from a top of the ball portion to the upper surface of the sealing member is 90 ?m to 230 ?m.

Abstract: In a connection system for electronic components (1) comprising a plurality of insulating layers (2) and conductive layers (3) and further comprising at least one embedded electronic component (4) embedded within at least one of the plurality of insulating layers (2) and conductive layers (3) the at least one embedded electronic component (4) is at least one first transistor having a bulk terminal thereof in thermal contact with a thermal duct (6) comprised of a plurality of vias (7) reaching through at least one of an insulating layer (2) and a conductive layer (3) of the connection system for electronic components (1) and emerging on a first outer surface (8) of the connection system for electronic components (1) under a first surface-mounted component (10).

Abstract: An optoelectronic device is provided which comprises an organic active layer (5) provided for generating electromagnetic radiation and a first electrode (1) provided for electrical contacting of the active layer, wherein the first electrode comprises a first electrode layer (11) and a first connection layer (12) spaced at least in places from the first electrode layer, the active layer is arranged at least in places between the first electrode layer and the first connection layer, and the first electrode comprises at least one through via (13) which extends through the active layer and, in so doing, forms an electrical contact between the first electrode layer and the first connection layer. A method for producing such a device is furthermore provided.

Abstract: A light-emitting diode (LED) package includes a light-emitting structure including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer; an isolating insulation layer; a first connection electrode portion and a second connection electrode portion electrically connected to the first conductive-type semiconductor layer and the second conductive-type semiconductor layer, respectively; a first electrode pad and a second electrode pad electrically connected to the first connection electrode portion and the second connection electrode portion, respectively; a first molding resin layer provided between the first electrode pad and the second electrode pad; a first pillar electrode and a second pillar electrode electrically connected to the first electrode pad and the second electrode pad, respectively; and a second molding resin layer provided on the first molding resin layer, the first electrode pad, and the second electrode pad, and between the first pillar

Abstract: One embodiment of the surface mount LED package includes a lead frame and a plastic casing at least partially encasing the lead frame. The lead frame includes a plurality of electrically conductive chip carriers. There is an LED disposed on each one of the plurality of electrically conductive chip carriers. A profile height of the surface mount LED package is less than about 1.0 mm.

Abstract: In a first aspect of the present inventive subject matter, a lighting device includes a light-emitting device 1 including p-contact and n-contact that are separately arranged from each other on a first surface of the light-emitting element and a phosphor layer including a phosphor particle and covering the light-emitting element 1 except the p-contact and n-contact of the light-emitting element, the phosphor layer includes a higher density of the phosphor particle on a position of the first surface between the p-contact and the n-contact of the light-emitting element than on a position of a second surface that is an opposite surface of the first surface 1b of the light-emitting element.

Abstract: A light emitting diode includes a substrate including a concave-convex pattern having concave portions and convex portions, a first light emitting unit disposed on the substrate, a second light emitting unit disposed on the substrate, a first wire connecting the first light emitting unit to the second light emitting unit over the concave-convex pattern, and an insulation layer disposed between the concave-convex pattern and the wire. The insulation layer has a shape corresponding to the concave-convex pattern.

Abstract: A light emitting device having an enhanced surface property and an electrical property is provided. The light emitting device includes a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer, a first electrode disposed on one side of the light emitting structure and electrically connected to the first semiconductor layer, a second electrode disposed on one side of the light emitting structure and electrically connected to the second semiconductor layer, and an ohmic contact including a first layer disposed between the second electrode and the second semiconductor layer and having aluminum (Al), a second layer including at least one MxAly alloy formed by a reaction with Al included in the first layer, and a third layer disposed on the second layer and having gold (Au) is provided.

Abstract: A chip mounting substrate including a plurality of conductive portions to apply an electrode voltage to a mounted chip having electrode portions, at least one insulation portion configured to electrically isolate conductive portions, a cavity depressed inward of the conductive portions and providing a space in which the chip is mounted and bumps formed on surfaces of the conductive portions having the cavity and bonded to the electrode portions. In the case of a metal substrate, a tight bonding is enabled between the chip and the substrate by bonding a plating layer formed on the electrode portions of the chip using bumps formed on the metal substrate.

Abstract: A silicone resin composition for sealing an optical semiconductor element includes (A) (A-1) an organopolysiloxane having a resin structure which contains at least two alkenyl groups in one molecule, the alkenyl groups being present at 10 to 70 mol % of the total substituent groups bonded to silicon atoms, (B) an organopolysiloxane oligomer having at least two alkenyl groups in one molecule and 2 to 5 silicon atoms, (C) an organohydrogenpolysiloxane which contains at least one hydrosilyl group and may have an alkoxy group or hydroxyl group in one molecule, and (D) an addition reaction catalyst, and is capable of providing a transparent cured product.

Abstract: A light-emitting element comprises a light-emitting stack comprising an active layer for emitting a light; a window layer on the light-emitting stack; and a first insulative layer having a first refractive index on the window layer; wherein the first insulative layer has a first refractive index, and the window layer has a second refractive index, and a difference between the first refractive index and the second refractive index is larger than 1.5.

Abstract: A light emitting device package, and a lighting system includes a light emitting device. The light emitting device includes a substrate, a first conductive semiconductor layer on the substrate, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer. A first via electrode contacts the first conductive semiconductor layer through a via hole formed through the substrate, and a second via electrode contacts the second conductive semiconductor layer through a second via hole formed through the substrate, the first conductive semiconductor layer, and the active layer.

Abstract: A light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer adjacent the active layer. A first electrode is electrically coupled to the first conductive semiconductor layer, and a second electrode is electrically coupled to the second conductive semiconductor layer. A channel layer is provided at a peripheral portion of a lower portion of the light emitting structure, and a conductive support member is provided adjacent to the second electrode. A first connection part is electrically coupled to the first electrode and the conductive support member, and a second connection part is electrically coupled to the second electrode.

Abstract: An object is to provide graphene which has high conductivity and is permeable to ions of lithium or the like. Another object is to provide, with use of the graphene, a power storage device with excellent charging and discharging characteristics. Graphene having a hole inside a ring-like structure formed by carbon and nitrogen has conductivity and is permeable to ions of lithium or the like. The nitrogen concentration in graphene is preferably higher than or equal to 0.4 at. % and lower than or equal to 40 at. %. With use of such graphene, ions of lithium or the like can be preferably made to pass; thus, a power storage device with excellent charging and discharging characteristics can be provided.

Abstract: A wiring board includes a heat dissipation plate, a heat-conductive adhesive layer, an insulating layer, a thermal via, a heat dissipation metal terminal, and electrodes. The heat-conductive adhesive layer is disposed on the heat dissipation plate. The insulating layer is disposed on the heat-conductive adhesive layer. The insulating layer is formed with an opening portion. The thermal via is disposed in the opening portion of the insulating layer. The heat dissipation metal terminal is disposed on the thermal via and electrically connected to the heat dissipation plate. The electrodes are disposed on the insulating layer. The electrodes are to be connected to an electronic component.

Abstract: Solid-state radiation transducer (SSRT) devices and methods of manufacturing and using SSRT devices are disclosed herein. One embodiment of the SSRT device includes a radiation transducer (e.g., a light-emitting diode) and a transmissive support assembly including a transmissive support member, such as a transmissive support member including a converter material. A lead can be positioned at a back side of the transmissive support member. The radiation transducer can be flip-chip mounted to the transmissive support assembly. For example, a solder connection can be present between a contact of the radiation transducer and the lead of the transmissive support assembly.

Abstract: An embodiment of the invention provides a chip package which includes: a semiconductor substrate having a first surface and a second surface; a first recess extending from the first surface towards the second surface; a second recess extending from a bottom of the first recess towards the second surface, wherein a sidewall and the bottom of the first recess and a second sidewall and a second bottom of the second recess together form an exterior side surface of the semiconductor substrate; a wire layer disposed over the first surface and extending into the first recess and/or the second recess; an insulating layer positioned between the wire layer and the semiconductor substrate; and a metal light shielding layer disposed over the first surface and having at least one hole, wherein a shape of the at least one hole is a quadrangle.

Abstract: An organic light emitting diode display device is provided, which comprises: a first substrate having a first surface with a first side; and a glass-forming sealant disposed thereon, adjacent to the first side and having a top surface, a bottom surface opposite to the top surface, and a middle surface therebetween. The middle surface has a first end connecting to the top surface, a second end connecting to the bottom surface and a third end therebetween. A first distance between a first projection of the first end on the first surface and the first side is unequal to a second distance between a second projection of the second end on the first surface and the first side; and a third distance between a third projection of the third end on the first surface and the first side is shorter than the first or second distance.

Abstract: A light-emitting diode including a substrate, a first semiconductor layer disposed on the substrate, an active layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the active layer and having a conductivity type different than that of the first semiconductor layer, and a reflective pattern disposed on the second semiconductor layer and configured to reflect light emitted from the active layer, the reflective pattern having heterogeneous metal layers and configured to absorb stress caused by differences in coefficient of thermal expansion between the heterogeneous metal layers.

Abstract: A method for producing an optoelectronic semiconductor chip is specified, comprising the following steps: providing an n-conducting layer (2), arranging a p-conducting layer (4) on the n-conducting layer (2), arranging a metal layer sequence (5) on the p-conducting layer (4), arranging a mask (6) at that side of the metal layer sequence (5) which is remote from the p-conducting layer (4), in places removing the metal layer sequence (5) and uncovering the p-conducting layer (4) using the mask (6), and in places neutralizing or removing the uncovered regions (4a) of the p-conducting layer (4) as far as the n-conducting layer (2) using the mask (6), wherein the metal layer sequence (5) comprises at least one mirror layer (51) and a barrier layer (52), and the mirror layer (51) of the metal layer sequence (5) faces the p-conducting layer (4).

Abstract: A package for mounting a light emitting element includes a recess; a pair of lead electrodes exposed at a bottom surface of the recess; a plating layer covering a surface of each of the pair of lead electrodes; and a resin molded body retaining the pair of lead electrodes, and forming an area between the pair of lead electrodes at the bottom surface of the recess and a lateral surface of the recess. At least one of the lead electrodes has a front surface protrusion that is linearly formed along the resin molded body at the bottom surface of the recess and along a periphery of the bottom surface of the recess, and a back surface protrusion that is formed at a position at a back surface opposite to a position of the front surface protrusion, and at least a tip of each of the front surface protrusion and the back surface protrusion is exposed outside the plating layer.

Abstract: A composition and method for formation of ohmic contacts on a semiconductor structure are provided. The composition includes a TiAlxNy material at least partially contiguous with the semiconductor structure. The TiAlxNy material can be TiAl3. The composition can include an aluminum material, the aluminum material being contiguous to at least part of the TiAlxNy material, such that the TiAlxNy material is between the aluminum material and the semiconductor structure. The method includes annealing the composition to form an ohmic contact on the semiconductor structure.

Abstract: An organic electronic device and a method of making an organic electronic device are provided. An embodiment of an electronic device includes a substrate, an active layer disposed on the substrate and a thin-layer encapsulation disposed on the active layer. The device further includes a first adhesive layer disposed on the thin-layer encapsulation, wherein the first adhesive layer comprises a getter material and a covering layer disposed on the first adhesive layer.

Abstract: A method of fabricating a sputtering target includes preparing a first powder material including at least one of a tin oxide and a mesh-forming oxide; mixing the first powder material and a second powder material comprising carbon or a tin oxide to prepare a mixture; simultaneously performing a primary compression and primary sintering on the mixture in a reduction atmosphere; and simultaneously performing a secondary compression and secondary sintering on the mixture in the reduction atmosphere to prepare the sputtering target.

Abstract: An optoelectronic device comprises a semiconductor stack, wherein the semiconductor stack comprises a first semiconductor layer, an active layer formed on the first semiconductor layer, and a second semiconductor layer formed on the active layer; an electrode formed on the second semiconductor layer, wherein the first electrode further comprises a reflective layer; and an insulative layer formed on the second semiconductor layer, and a space formed between the first electrode and the insulative layer.

Abstract: A light emitting device, includes: a package equipped with a lead having an upper surface and a lower surface, and a metal board and a plating layer, the upper surface including a mounting portion, the metal board whose main component is copper, the plating layer including a first plating layer and a second plating layer which are provided on the lower surface of the metal board, the first plating layer containing silver and nickel and being formed on the edge of the metal board, and the second plating layer containing no nickel and being formed on at least part of a region below the mounting portion, a molded resin that holds the lead so that the lower face of the lead is exposed to the outside; a light emitting element mounted on the mounting portion; and a sealing member that seals the light emitting element.

Abstract: A thin-film transistor array substrate is disclosed. The array substrate includes a support substrate, a plurality of scan lines on the support substrate, and a plurality of data lines on the support substrate, where the plurality of scan lines are insulated and intersect with the plurality of data lines. The array substrate also includes a plurality of pixel units located near intersections of the scan lines and the data lines, a first metal layer on the support substrate, and an insulating layer on the first metal layer, where the insulating layer includes a plurality of via holes, each exposing a portion of the first metal layer. The array substrate also includes a semiconductor layer on the insulating layer and electrically connected to the first metal layer, and a second metal layer on the semiconductor layer and electrically connected to the semiconductor layer.

Abstract: The present invention provides a light-emitting diode (LED) package including: a substrate on which a set of bonding pads are formed; an LED element configured to provide light of a predetermined wavelength region, having a set of chip pads formed on a top surface thereof and being attached on a top surface of the substrate; a set of gold wires connecting the bonding pads of the substrate with the chip pads of the LED element; a phosphor layer formed in a cap shape having side and top portions of a uniform thickness and being configured to surround sides and a top surface of the LED element while being spaced apart therefrom; and a filler disposed to fill a space formed between the phosphor layer and the LED element, wherein the LED element, the gold wires, and the bonding pads of the substrate are under the phosphor layer cap.

Abstract: The present invention provides a light-emitting part and a light-emitting apparatus exhibiting high brightness per unit area, and simplified production methods therefor. The light-emitting unit comprises a single base substrate, and a plurality of light-emitting devices thereon. The light-emitting unit includes a serial connection body which connects at least a part of the light-emitting devices in series. The serial connection body comprises light-emitting devices which make a current path, a light-emitting device which does not make a current path, and a connection member which electrically connects an n-electrode and a p-electrode of the light-emitting devices.

Abstract: Provided is a semiconductor light emitting device. The semiconductor light emitting device comprises a second electrode layer; a light emitting structure comprising a plurality of compound semiconductor layers under the second electrode layer; at least one dividing groove that divides inner areas of the lower layers of the light emitting structure into a plurality of areas; and a first electrode under the light emitting structure.

Abstract: An OLED display according to an exemplary embodiment includes: a substrate; an organic light emitting diode formed on the substrate; an overcoat covering the organic light emitting diode; and a patterned metal sheet attached on the overcoat and having a plurality of protrusion and depression portions. A plurality of protrusions may be formed in a bottom surface of the patterned metal sheet where the protrusion and depression portions of the patterned metal sheet and the overcoat face each other.

Abstract: To provide a semiconductor light emitting element with high luminous efficiency, the light emitting element includes: a substrate; a semiconductor laminate placed above the substrate, the semiconductor laminate comprising a second semiconductor layer, an active layer and a first semiconductor layer laminated in this order from the substrate; and a first electrode and a second electrode placed between the substrate and the semiconductor laminate, wherein the semiconductor laminate is divided in a plurality of semiconductor blocks by a groove, wherein the first electrode includes protrusions that are provided in each of the plurality of semiconductor blocks and that penetrate the second semiconductor layer and the active layer to be connected to the first semiconductor layer, and wherein the second electrode is connected to the second semiconductor layer in each of the plurality of semiconductor blocks and has an external connector that is exposed on the bottom of the groove.

Abstract: According to one embodiment, a semiconductor light-emitting device includes a semiconductor layer including a first semiconductor layer, a second semiconductor layer, a light emitting layer, a first surface, and a second surface; an n-side electrode including a first n-side electrode and a second n-side electrode; a first contact unit; a second contact unit; an n-side interconnect unit; a p-side electrode; and an insulating film. The insulating film includes a first insulating portion, a second insulating portion, a third insulating portion, and a fourth insulating portion.

Abstract: This disclosure relates to a light-emitting apparatus comprising a submount, a chip carrier formed on the submount, a light-emitting chip formed on the chip carrier, a reflecting cup formed on the submount and enclosing the light-emitting chip and the chip carrier, and a transparent encapsulating material for encapsulating the light-emitting chip.

Abstract: A light-emitting device is disclosed that includes a light-emitting stack comprising a first surface; a patterned dielectric layer formed on the first surface, comprising a first portion and a second portion substantially surrounding the first portion and having substantially the same thickness with that of the first portion; a first reflective electrode covering the first portion of the patterned dielectric layer; and a barrier layer covering the first reflective electrode and the second portion of the patterned dielectric layer.

Abstract: Disclosed herein is a light emitting device manufactured by separating a growth substrate in a wafer level. The light emitting device includes: a base; a light emitting structure disposed on the base; and a plurality of second contact electrodes disposed between the base and the light emitting structure, wherein the base includes at least two bulk electrodes electrically connected to the light emitting structure and an insulation support disposed between the bulk electrodes and enclosing the bulk electrodes, the insulation support and the bulk electrodes each including concave parts and convex parts engaged with each other on surfaces facing each other, and the convex parts including a section in which a width thereof is changed in a protrusion direction.

Abstract: A light-emitting device includes a board, a light-emitting diode chip disposed on the board, a molding part disposed on the board and covering the light-emitting diode chip, and a lens cap disposed on the board that is coupled with the substrate thereon and covering the molding part. An air gap is disposed between the lens cap and the molding part.

Abstract: An LED packaging includes a substrate having a top surface and a bottom surface opposite to the top surface, a recess defined in the top surface, an LED mounted on the top surface of the substrate, a zener diode received in the recess, and a reflecting layer formed in the recess and enclosing the zener diode therein.

Abstract: A semiconductor LED package includes a package body having first and second electrode structures and an LED chip connected to at least one of the first and second electrode structures using a wire. The LED chip includes a light emitting structure and first and second electrode parts. At least one of the first and second electrode parts includes a bonding electrode layer made of a material having the same composition as a material of the wire and bonded to the wire, and an uneven electrode layer disposed on the bonding electrode layer and having at least one through hole filled with the wire. The at least one through hole allows a top surface of the bonding electrode layer to be exposed therebelow.

Abstract: A surface-mounted light-emitting device includes: a LED epitaxial structure having two opposite surfaces, wherein the first surface is a light-emitting surface; P and N electrode pads over the second surface of the epitaxial structure, which have sufficient thickness to support the LED epitaxial structure, and the P and N electrode pads have two opposite surfaces respectively, in which, the first surface is approximate to the LED epitaxial structure; an insulator between the P and N pads to prevent the P and N electrode pads from short circuit; and the P and N electrode pads are directly applied in the SMT package. Some embodiments allow structural changes compared with conventional SMT package type by directly mounting the chip over the supporting substrate through an electrode pad. In addition, soldering is followed after the chip process without package step, which is mainly applicable to flip-chip LED device.

Abstract: Pkg resin crack is suppressed after dicing. A light emitting device 1 where a light emitting device 2 that emits light is mounted on a lead frame 3 and that uses a resin cavity molding package 5 having an integrally molded lead frames 3, 4 constituting electrodes that correspond to the light emitting element 2 and resin, wherein roundness is given to a part or all of a cutting plane corner part of a retention section (hanger lead 3a, 4a) that become a cause of crack generation due to the retention sections (hanger leads 3a, 4a) of the lead frames giving stress concentration to resin at the time of cutting by a blade 7.

Abstract: A method for producing an optoelectronic device comprises steps for providing a package with a first surface and a second surface, wherein an electrically conductive chip carrier is embedded in the package and is accessible at the first surface and at the second surface, and for applying an insulation layer on the second surface of the package by means of aerosol deposition.

Abstract: An object of the invention is to provide a phosphor that emits a light containing much red and green light components and a light-emitting device and a lighting apparatus comprising the phosphor that have favorable color rendering properties. An oxide nitride phosphor having a garnet structure represented by Formula [1]: AwAlxCy:Cez, in Formula [1], A=(Lua,Yb), a+b=1, 0<a<1, 0<b<1, C?(Oc,Nd), 10?c+d?16, 1.4?c/d, 2?w+z?4, 4.0<x?7.0); the molar ratio of Ce/A is ?0.015 and the nitrogen content is 0.007 mass % or more.

Abstract: A display device includes a display panel, a panel driver, panel-side output terminals, image signal lines, and control signal lines. The terminals are disposed in a non-display area of the display device and connected to the panel driver. The image signal lines are routed in the non-display area from the terminals to cross a long edge of the panel driver and spread in a fan-like form toward the display area. The control signal lines including first lines and second lines are routed in the non-display area from the terminals toward a display area of the display device. The first lines are routed from the terminals to cross the long edge and along the image signal lines toward the display area. The second lines each including portions having a width larger than the first lines are routed from the terminals to cross a short edge of the panel driver.

Abstract: An optoelectronic component includes a plastics housing, wherein a first leadframe section is embedded into the plastics housing, a chip landing face and a soldering contact face of the first leadframe section are at least partly not covered by the plastics housing, the soldering contact face has a groove, and the groove is not covered by the material of the plastics housing.

Abstract: There is provided a light emitting device highly resistant to the environment, and having good heat resistance, light resistance and gas barrier property, and a method for producing same. With the light emitting device, a substrate 2 and interconnect patterns 5A, 5B formed on the surface thereof are covered with an acrylic resin primer 10 having better gas barrier property than a silicone resin sealing resin part 3. Light resistance is ensured by the silicone resin sealing resin portion 3 and the gas barrier property can be ensured by the acrylic resin primer 10.

Abstract: A liquid crystal display device which includes a pair of substrates, a pixel including a liquid crystal element between the pair of substrates, a lighting portion provided on the outer side of the pair of substrates, a first polarizing member between the pair of substrates and the lighting portion, a reflective member provided outside the lightning portion, a second polarizing member on a side opposite to the first polarizing member with the pair of substrates provided therebetween, and a first optical sensor and a second optical sensor. The first optical sensor has a function of detecting illuminance of external light, and the second optical sensor has a function of detecting a color tone of polarized light emitted from the pixel portion. The lightning portion can emits light having a predetermined wavelength depending on the color tone of the pixel portion which is detected by the second optical sensor.