Abstract: A display apparatus includes a flexible substrate, a light-emitting diode (LED), and a partitioning wall pattern. The flexible substrate includes a concavo-convex portion. The flexible substrate has a first elasticity. The LED is disposed on the concavo-convex portion. The partitioning wall pattern substantially surrounds the LED at a predetermined distance from the LED in a plan view. The partitioning wall pattern has a second elasticity less than the first elasticity.

Abstract: A component with a semiconductor body, and first and second metal layer is disclosed. The first metal layer is arranged between the semiconductor body and the second metal layer, the semiconductor body has a first semiconductor layer on a side which is averted from the first metal layer, a second semiconductor layer on a side facing towards the first metal layer, and an active layer arranged between the first semiconductor layer and the second semiconductor layer, the component has a through-connection, which extends through the second semiconductor layer and the active layer for the electrical bonding of the first semiconductor layer. The second metal layer has a first subregion electrically connected to the through-connection by the first metal layer, and a second subregion spaced apart laterally from the first subregion by an intermediate space. In an overhead view, the first metal layer laterally completely covers the intermediate space.

Abstract: An RGB LED uses three leads instead of four. The three RGB semiconductor chips are all connected to a common lead where they are held. One of the three RGB semiconductor chips is connected, in conventional fashion, to a second lead. The other two of the three RGB semiconductor chips are alternately connected to a third lead and wired so that only one will work at a time, depending upon whether a positive or negative current is applied. A controller controls the direct and alternating current applied to the three RGB semiconductor chips to produce the desired combined color for the RGB LED.

Abstract: According to one embodiment, a semiconductor light emitting element (110) includes a metal layer (40), a first to a fourth semiconductor layers (10a, 20a, 10b, 20b), a first and a second light emitting layers (30a, 30b), a first to a sixth electrodes (e1-e6), and a first inter-element interconnect section (12). The first semiconductor layer (10a) includes a first to a third regions (r1-r3). The second semiconductor layer (20a) is provided between the first region (r1) and the metal layer (40) and between the second region (r2) and the metal layer (40). The third semiconductor layer (10b) includes a fourth to a sixth regions (r4-r6). The fourth semiconductor layer (20b) is provided between the fourth region (r4) and the metal layer (40) and between the fifth region (r5) and the metal layer (40). The first inter-element interconnect section (12) is provided between the second electrode (e2) and the metal layer (40) and between the sixth electrode (e6) and the metal layer (40).

Abstract: A light emitting device includes a light emitting element; a light-transmissive member that has a lower surface positioned inside a peripheral edge of an upper surface of the light emitting element in plan view, a first lateral surface extending from the lower surface and having at least one inclined surface that is inclined with respect to the upper surface of the light emitting element, and a second lateral surface positioned above and outside the first lateral surface; a light-transmissive adhesive member positioned inside the second lateral surface in plan view, wherein the adhesive member adheres the upper surface of the light emitting element and the lower surface of the light-transmissive member to each other and covers the first lateral surface; and a light-reflective member covering the second lateral surface.

Abstract: A method for manufacturing a light emitting diode structure uses a removable prefilled layer to attach the flip-type chip on a temporary substrate. A growth substrate of the flip-type chip is removed by laser lift-off, and then the light emitting diode structure is attached to a transparent support body. Lastly, the temporary substrate and the prefilled layer are removed.

Abstract: A light emitting device includes a resin package having a recess defined by a recess bottom surface and a recess lateral surface. The resin package includes a first lead including a first lead lower surface, a first lead upper surface, and an end portion. The light emitting element is mounted on the first lead upper surface opposite to the first lead lower surface. The light reflecting member is disposed on the recess bottom surface between the recess lateral surface and the light emitting element in a lateral direction. The end portion is provided between the first lead lower surface and the light reflecting member in the lateral direction. The end portion has a cross-sectional area viewed in the lateral direction which is smaller than a cross-sectional area of the first lead between the first lead lower surface and the first lead upper surface viewed in the lateral direction.

Abstract: A light emitting device includes a support substrate; a conductive wiring located on an upper surface of the support substrate; a light emitting element disposed on an upper surface of the conductive wiring via a bonding member interposed therebetween; and a frame body located on an upper surface of the support substrate. The frame body has a plurality of recessed portions on an inner lateral surface surrounding the light emitting element in a top view of the light emitting device. The conductive wiring includes an underlying portion located directly under the light emitting element, and at least two extended portions extending from the underlying portion to a location inside of at least two respective ones of the recessed portions in a top view of the light emitting device.

Abstract: Provided are a photocurable pressure-sensitive adhesive composition including an acrylic polymer, an epoxy resin, a crosslinking agent and a photopolymerization initiator, an organic electronic device having an encapsulant including the composition using a film-state product, that is, a curable pressure-sensitive adhesive film, including the composition, and a method of manufacturing an organic electronic device using the curable pressure-sensitive adhesive film.

Abstract: Provided are a photoacoustic probe and photoacoustic diagnostic apparatus. The photoacoustic probe includes a light irradiation unit for irradiating first light that is used for photoacoustic imaging on an object and an indicator for providing information about whether the first light is irradiated by using the first light.

Abstract: Methods and apparatus are provided to improve long-term reliability of LED packages using reflective opaque die attach (DA) material. In one novel aspect, a protected area surrounding edges of the LED is determined. The DA is applied to the determined protected area by a dispense process, a stamping process, or a screen printing process, such that the effect of temperature degradation is reduced. A heat distribution model is used to determine the protected area, which is between edges of the LED and a predefined isothermal line where the temperature is 1/e that of the temperature at edges of the LED. In another embodiment, the protected area is further based on a spreading ratio of the substrate size to the LED size. In another novel aspect, with multiple LEDs in the LED package, the spreading ratio is further based on pitch distances to the immediate adjacent LEDs and the substrate boundary.

Abstract: A package substrate is provided. The package substrate includes a base layer having a first surface and a second surface opposite to the first surface, a plurality of through holes penetrating the base layer, a first metal layer disposed on the first surface, and a second metal layer disposed on the second surface. The first metal layer includes a closed-loop trench. A part of the second metal layer is electrically connected to the first metal layer via the through holes. The through holes are positioned at an inner part the closed-loop trench.

Abstract: A light emitting element includes: a substrate; a first conductive type semiconductor layer stacked on the substrate; a light emitting layer stacked on the first conductive type semiconductor layer; a second conductive type semiconductor layer stacked on the light emitting layer; an ITO layer stacked on the second conductive type semiconductor layer; and a reflective layer stacked on the ITO layer. The substrate is transparent to an emission wavelength of the light emitting layer, and the reflective layer includes a Ti-containing first layer stacked on the ITO layer to make contact with the ITO layer and an Al-containing second layer stacked on the first layer in an opposite side to the ITO layer.

Abstract: The present invention provides a LED package in which deterioration in heat radiation performance is suppressed. The LED package comprises a substrate, a light-emitting device mounted on the substrate, sealing resin sealing the light-emitting device and mixed with phosphor, a heat sink provided on a rear surface of the substrate, and a rear electrode provided on the rear surface of the substrate and electrically connected to the light-emitting device. The heat sink is provided at a distance from the rear electrode in a region except for the rear electrode. The heat sink is divided into eighteen small heat sinks by grooves formed in a rectangular lattice pattern. When the LED package is mounted on a mounting substrate, the gas generated from solder is efficiently discharged through the grooves to the outside, thereby suppressing the generation of air bubbles between the heat sink and the solder.

Abstract: A substrate structure includes a metal substrate, a first connection layer, a second connection layer, a dielectric material layer, a metal core layer and an internal component. The first and second connection layers are disposed on a surface of the metal substrate. The metal core layer having an opening is disposed on a surface of the first connection layer. The internal component having a plurality of electrode pads is disposed on a surface of the second connection layer and in the opening of the metal core layer. The dielectric material layer is disposed on the surface of the metal substrate. The first and second connection layers, the metal core layer and the internal component are partially covered with the dielectric material layer. The metal core layer is electrically connected to one of the electrode pads via the first and second connection layers and the metal core layer.

Abstract: A method of manufacturing a light-emitting element includes forming a light-transmissive insulating film on a portion of an upper surface of a semiconductor layered body; forming a first light-transmissive electrode to continuously cover the upper surface of the semiconductor layered body and an upper surface of the light-transmissive insulating film; heat-treating the first light-transmissive electrode, and subsequently forming a metal film in at least a portion of a region above the light-transmissive insulating film; forming a second light-transmissive electrode to continuously cover an upper surface of the metal film and an upper surface of the first light-transmissive electrode, the second light-transmissive electrode being electrically connected to the first light-transmissive electrode; and forming a pad electrode in a region where the metal film is disposed in a top view, such that at least a portion of the pad electrode is in contact with an upper surface of the second light-transmissive electrode.

Abstract: A light emitting device includes a wiring board, a light emitting element, and a protection film. The wiring board includes a base member, and positive and negative wiring layer parts. The positive and negative wiring layer parts are arranged on or above the upper surface of the base member. The light emitting element is mounted on the wiring layer parts in a flip-chip manner. The protection film covers the base member, the wiring layer parts and the light emitting element, and is formed of an inorganic material for serving as the exterior surface of the light emitting device. Each of the wiring layer parts has a curved outer-side edge. The curvature of the outer-side edge is substantially constant.

Abstract: Various embodiments may relate to a component. The component includes an optically active region designed for electrically controllably transmitting, reflecting, absorbing, emitting and/or converting an electromagnetic radiation, and an optically inactive region formed alongside the optically active region, wherein the optically inactive region and/or the optically active region have/has an adaptation structure designed to adapt the value of an optical variable in the optically inactive region to a value of the optical variable in the optically active region.

Abstract: There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions.

Abstract: An LED package and method of manufacture. An embodiment of the LED package includes a metal base having a cavity, a flexible circuit on the base, a dielectric layer in the cavity, and an LED chip having a bottom side facing the base and electrically coupled to the flexible circuit. The LED chip is powered by current flowing through the flexible circuit, and heat generated by the LED chip is conducted to the base through the flexible circuit and the dielectric layer.

Abstract: A hands-free wearable lighting device is a device utilized to provide illumination to the user's surroundings while being worn. At least one multicolor light-emitting diode (LED) is positioned within an LED compartment located on a housing. A control unit, a brightness adjustment switch, and a color adjustment switch allow the user to alter the light of the at least one multicolor LED. A necklace allows the housing to be worn around the user's neck in order to provide hands-free illumination. The user may utilize the device as a handheld light by grasping the device via a finger tab. Additionally, the user may utilize a prop stand to direct the light from the at least one multicolor LED in a desired direction. The device may include a laser diode as well in order to allow the device to emit a laser in addition to regular illumination.

Abstract: An organic light emitting display device is disclosed that includes a substrate including an active area and a pad area; a thin-film transistor (TFT) including a drain electrode, a source electrode, and a gate electrode; an anode electrode; an organic emitting layer; a cathode electrode; and a pad area of the substrate provided with a signal pad that is in a same layer as the drain electrode and the source electrode, the pad area including a first pad electrode on the signal pad, and a second pad electrode on the first pad electrode.

Abstract: An optoelectronic semiconductor component has at least one semiconductor chip for emitting electromagnetic radiation. The semiconductor chip has at least one side surface and wherein a part of the electromagnetic radiation exits through the side surface during operation of the semiconductor chip. The semiconductor component additionally has at least one deflecting element that is formed to be transmissive to radiation. The deflecting element and the semiconductor chip are arranged one alongside another. The deflecting element is arranged at the side surface of the semiconductor chip. The deflecting element has a material, the index of refraction of which is greater than an average index of refraction of a semiconductor material of the semiconductor chip.

Abstract: A solid state lighting package is provided. The package comprising at least one LED element positioned on a top surface of a substrate and a conformal reflective layer of inorganic particles, whereby at least of portion of the light emitted by the LED element is reflected by the conformal reflective layer. A method of manufacturing a solid state lighting package comprising the distribution of inorganic particles, and a method of increasing the luminous flux thereof, is also provided.

Abstract: A printed circuit board having an improved heat radiation performance, and a light-emitting device including the same are provided. The printed circuit board includes a first electrode layer, a first insulation layer disposed on one surface of the first electrode layer, and a second electrode layer disposed on the first insulation layer. The first insulation layer includes a cavity formed through a part thereof. At least a portion of the one surface of the first electrode layer may be exposed to the outside through the cavity.

Abstract: A method of producing a semiconductor light emitting element includes providing a semiconductor stack including a first semiconductor layer, an active layer, a second semiconductor layer, and a first insulating layer. An upper surface of the first insulating layer is partially covered with a mask. The semiconductor stack is etched to expose the first semiconductor layer in a region not covered by the mask. The mask is removed. A second insulating layer covering from the upper surface of the first insulating layer to an exposed region of the first semiconductor layer is provided. The second insulating layer is etched without masking to remove at least a portion of the second insulating layer covering the exposed region to expose the exposed region. A first conducting layer covering from the exposed region of the first semiconductor layer to a region above the upper surface of the first insulating layer is provided.

Abstract: Die may be thinned using a thinning and/or a polishing process. Such thinned die may be flexible and may change operational characteristics when flexed. The flexible die may be applied to a mechanical carrier (e.g., a PCB) of a card or device. Detection circuitry may also be provided on the PCB and may be used to detect changed operational characteristics. Such detection circuitry may cause a reaction to the changed characteristics by controlling other components on the card or device based upon the flex-induced changed characteristics. The thinned die may be stacked, interconnected, and encapsulated between sheets of laminate material to form a flexible card or device.

Abstract: A method of manufacturing a display apparatus includes separating a light-emitting diode (“LED”) chip from a base substrate; disposing the separated light-emitting diode chip in a solution; disposing a substrate including a first electrode thereon, in the solution; with the separated light-emitting diode chip and the substrate including the first electrode thereon in the solution, applying a negative voltage to the substrate to attract the separated light-emitting diode chip to the first electrode on the substrate; mounting the light-emitting diode chip attracted to the first electrode, on the first electrode; and removing the substrate with the light-emitting diode chip mounted on the first electrode from the solution and drying the removed substrate, to form the display apparatus.

Abstract: A lamp is provided. The lamp includes at least one light emitting diode (LED) and an electronic circuit configured to provide power to the at least one LED. The lamp includes at least one flat circuit board having mounted thereto the at least one LED and the electronic circuit. The at least one flat circuit board acts as a heatsink to dissipate heat from the at least one LED and acts as a plurality of circuit paths for the electronic circuit and the at least one LED.

Abstract: The present application provides a light-emitting device comprising a first light-emitting diode group; a second light-emitting diode group electrically connected to the first light-emitting diode group in parallel; and a temperature compensation element electrically connected to the second light-emitting diode group in series; and a first switch device connected between the second light-emitting diode group and the temperature compensation element.

Abstract: A wavelength converting device includes a heat dissipating member, a wavelength converting member, and a connecting member. The wavelength converting member is disposed on the heat dissipating member and contains a fluorescent material and a holding body including aluminum oxide, magnesium oxide, zirconium oxide, lutetium oxide, titanium oxide, chromium oxide, tungsten oxide, divanadium pentoxide, molybdenum trioxide, sodium oxide, yttrium oxide, silicon dioxide, boron oxide, or diphosphorus pentoxide. The connecting member contains a metal material and connecting the heat dissipating member and the wavelength converting member. The wavelength converting member includes an upper surface, side surfaces, and a lower surface. The connecting member is thermally connected to the side surfaces and the lower surface of the wavelength converting member.

Abstract: Methods for manufacturing semiconductor light-emitting devices and semiconductor light-emitting devices having a high radiating performance and can include a metallic laminate substrate, a semiconductor light-emitting chip and a transparent resin. The metallic laminate substrate can include a cavity so as to be able to accurately mount the light-emitting chip, and also can structures to efficiently radiate heat generated from the light-emitting chip. The transparent resin to encapsulate the semiconductor light-emitting chip in the cavity can include various wavelength converting materials. Additionally, the light-emitting devices can be manufactured in manufacturing processes similar to conventional light-emitting devices.

Abstract: A white light-emitting device includes a light-emitting element that emits a blue light, and a sealing resin that seals the light-emitting element and that includes a first phosphor and a second phosphor, the first phosphor wavelength-converting a portion of the blue light and emitting a red light, the second phosphor wavelength-converting a portion of the blue light and emitting a green light. The white light-emitting device emits a white light by mixing the blue, red and green lights. The sealing resin further includes a third phosphor that wavelength-converts a portion of the blue light, emits a light in a same color gamut as the first or second phosphor, and has a higher light conversion efficiency than the first or second phosphor. The third phosphor is included in the sealing resin at an additive amount less than an amount that causes a change in a spectrum of the white light.

Abstract: A light emitting device includes a light emitting element, a light-reflecting substrate, and an electrically conductive member. The light emitting element includes a first surface and an electrode provided on the first surface. The light-reflecting substrate has a first main surface facing the first surface of the light emitting element and has a second main surface opposite to the first main surface. The light-reflecting substrate defines a hole at a position corresponding to the electrode. The hole penetrates through the light-reflecting substrate from the first main surface to the second main surface. The electrically conductive member includes a substantially spherical core arranged in the hole and bonded with the electrode, and a coating portion provided in a space between the substantially spherical core and a lateral surface of the hole.

Abstract: A light emitting device including a contact layer, a blocking layer over the contact layer, a protection layer adjacent the blocking layer, a light emitter over the blocking layer, and an electrode layer coupled to the light emitter. The electrode layer overlaps the blocking layer and protection layer, and the blocking layer has an electrical conductivity that substantially blocks flow of current from the light emitter in a direction towards the contact layer. In addition, the protection layer may be conductive to allow current to flow to the light emitter or non-conductive to block current from flowing from the light emitter towards the contact layer.

Abstract: Top-side cooling of Radio Frequency (RF) products in air cavity packages is provided. According to one aspect, an air cavity package comprises a substrate, a RF component mounted to the substrate, and a lid structure comprising a first material and being mounted to the substrate that covers the RF component such that a cavity is formed within the lid structure and about the RF component. At least one opening is provided in a top portion of the lid. The air cavity package also comprises a heat transfer structure comprising a second material and comprising a heat path extending from the top surface of the substrate through the opening(s) in the lid to the top outer surface of the air cavity package to provide a top-side thermal interface. In one embodiment, the lid is comprised of a molded material that absorbs RF signals and the heat transfer structure is metal.

Abstract: A packaged micro-electro-mechanical system (MEMS) device (100) comprises a circuitry chip (101) attached to the pad (110) of a substrate with leads (111), and a MEMS (150) vertically attached to the chip surface by a layer (140) of low modulus silicone compound. On the chip surface, the MEMS device is surrounded by a polyimide ring (130) with a surface phobic to silicone compounds. A dome-shaped glob (160) of cured low modulus silicone material covers the MEMS and the MEMS terminal bonding wire spans (180); the glob is restricted to the chip surface area inside the polyimide ring and has a surface non-adhesive to epoxy-based molding compounds. A package (190) of polymeric molding compound encapsulates the vertical assembly of the glob embedding the MEMS, the circuitry chip, and portions of the substrate; the molding compound is non-adhering to the glob surface yet adhering to all other surfaces.

Abstract: A light source module including a body in which a light emitting device is disposed may be provided. The body includes: a main body including a top surface, a bottom surface, a first side, and a second side; a first subsidiary body disposed on the first side of the main body; and a second subsidiary body disposed on the second side of the main body. The first subsidiary body includes a first extension part extending from the first side and a second extension part extending from the first extension part. Each of the first extension part and the second extension part has a top surface and a bottom surface. The bottom surface of the first extension part and the bottom surface of the second extension part are disposed on the same plane with the bottom surface of the main body.

Abstract: A method for producing an optoelectronic device comprises steps for providing a package with a first surface and a second surface, wherein an electrically conductive chip carrier is embedded in the package and is accessible at the first surface and at the second surface, and for applying an insulation layer on the second surface of the package by means of aerosol deposition.

Abstract: A modular lighting system (100) comprising a plurality of interconnected generally planar units (15, 115, 215), each unit having at least one illumination element (31), and an electrical circuit for connection to an adjacent unit and comprising a respective sensor (16, 17) associated with each illumination element, the sensor being arranged to be actuated by the presence of an article over or adjacent to the respective illumination element, and the system being controlled such that when the presence of one or more articles is sensed, the illumination is enabled of one of the illumination elements. Each unit has a further sensor (45) for detecting the approach of a person and illumination is effected only when both said presence sensor and said further sensor are actuated. The further sensor may be a proximity sensor, a vibration sensor or temperature sensing means.

Abstract: A light emitting element includes a semiconductor layer; an upper electrode disposed on an upper surface of the semiconductor layer; and a lower electrode disposed on a lower surface of the semiconductor later. In a plan view, the upper electrode includes a first extending portion extending in an approximately rectangular shape along an outer periphery of the semiconductor layer, a first pad portion connected to a first side among four sides of the first extending portion, a second pad portion connected to a second side that is opposite to the first side, among the four sides of the first extending portion, and a second extending portion and a third extending portion, each disposed in a region surrounded by the first extending portion, the second extending portion and the third extending portion each connecting the first pad portion and the second pad portion.

Abstract: In an optical sheet and a backlight unit comprising same, the optical sheet comprises: a first transparent film, a first barrier layer; and an light conversion layer, wherein the first barrier layer is formed on one surface of the first transparent film, the light conversion layer is formed on top of the first barrier layer, and wherein at least one of a light-emitting composite including a wax particle and a nano light-emitting body that is disposed inside the wax particle, and a fluorescent particle is dispersed.

Abstract: A light emitting device includes a resin package and a light emitting element. The resin package has a cavity. The resin package includes first and second lead portions and a resin member. The first lead portion includes a first lead side surface and a lead recess portion that extends from the first lead side surface in a direction away from the second lead portion, with a part of the resin member being arranged within the lead recess portion. The light emitting element includes first and second electrodes that respectively face the first and second lead portions. The first electrode includes a first electrode side surface and an electrode recess portion that extends from the first electrode side surface in a direction away from the second electrode. The electrode recess portion is arranged at a position overlapping the lead recess portion in a plan view.

Abstract: An optoelectronic component includes a composite body including a molded body; and an optoelectronic semiconductor chip embedded into the molded body, wherein the optoelectronic semiconductor chip includes a first electrical contact on its top side, a first top side metallization is arranged on the top side of the composite body and electrically conductively connects the first electrical contact to the through contact, a second top side metallization is arranged on the top side of the composite body and electrically insulated with respect to the first top side metallization, the second top side metallization completely delimits a part of the top side of the optoelectronic semiconductor chip, and a wavelength-converting material is arranged in a region completely delimited by the second top side metallization on the top side of the composite body, the wavelength-converting material extending as far as the second top side metallization.

Abstract: A light emitting diode structure including a substrate, a semiconductor epitaxial layer and a reflective conductive structure layer is provided. The semiconductor epitaxial layer is disposed on the substrate and exposes a portion of the substrate. The reflective conductive structure layer covers a part of the semiconductor epitaxial layer and the portion of the substrate exposed by the semiconductor epitaxial layer.

Abstract: A light emitting diode (LED) lighting module includes a plurality of LED components and a carrier. The LED components are electrically connected in series, and each LED component includes a LED die having a perpendicular structure. The carrier includes a substrate and a protecting dam, the LED components and the protecting dam are respectively placed on the substrate, and a height of the protecting dam is higher than that of each LED component. When a specific condition is satisfied, a short circuit condition between two adjacent LED components when performing die-bond procedure is prevented.

Abstract: In various embodiments, an illumination apparatus features spatially separated input and output regions, a light source, a phosphor for light conversion, and an out-coupling structure.

Abstract: Light emitting diode packages as disclosed herein include a monolithic chip including at least a first and a second light emitting diode (LED) that are electrically coupled in series, wherein the first and the second LEDs each include at least one electrical terminal configured to be electrically coupled to a power source. The monolithic chip is mounted onto a connection substrate having first and second landing pads formed from metallic material and electrically isolated from each other. The monolithic chip is mounted to the connection substrate such that the electrical terminal of the first LED is electrically connected to the first landing pad and the electrical terminal of the second LED is electrically connected to the second landing pad. In an example, the monolithic chip includes a third and a fourth LED electrically coupled to each other in series, and electrically coupled to the first and second LEDs in parallel.

Abstract: An optoelectronic component includes a housing including a plastic material and a first lead frame section at least partly embedded in the plastic material, a first recess and a second recess, wherein a first upper section of an upper side of the first lead frame section is not covered by the plastic material in the first recess, a second upper section of the upper side of the first lead frame section is not covered by the plastic material in the second recess, the first recess and the second recess are separated from one another by a section of the plastic material, an optoelectronic semiconductor chip is arranged in the first recess, and no optoelectronic semiconductor chips is arranged in the second recess.

Abstract: A flexible display and method of manufacturing the same are disclosed. In one aspect, the display includes a flexible substrate having a bending area and a non-bending area and a plurality of metal wirings formed over the flexible substrate in the bending area and the non-bending area. Each of the metal wirings which are formed in the bending area includes a pair of first hard wirings formed over the flexible substrate and a first soft wiring electrically connected to ends of the pair of first hard wirings.