Lithium-drift (epo) Patents (Class 257/E21.139)
  • Patent number: 7528466
    Abstract: A copper gate electrode, applied in a thin-film-transistor liquid crystal display (LCD) device, at least comprises a patterned copper layer formed on a glass substrate, and a barrier layer formed on the patterned copper layer. The barrier layer comprises at least one of nitrogen and phosphorus, or comprises an alloy formularized as M1M2R wherein M1 is cobalt (Co) or molybdenum (Mo), M2 is tungsten (W), molybdenum (Mo), rhenium (Re) or vanadium (V), and R is boron (B) or phosphorus (P).
    Type: Grant
    Filed: July 12, 2005
    Date of Patent: May 5, 2009
    Assignee: AU Optronics Corp.
    Inventors: Yu-Wei Liu, Wen-Ching Tsai, Kuo-Yu Huang, Hui-Fen Lin
  • Patent number: 7303967
    Abstract: Disclosed is a method for fabricating a transistor of a semiconductor device, the method comprising the steps of: providing a semiconductor; forming a gate electrode; performing a low-density ion implantation process with respect to the substrate, thereby forming an LDD ion implantation layer; forming an insulation spacer on a sidewall of the gate electrode; forming a diffusion barrier; performing a high-density ion implantation process with respect to the substrate, thereby forming a source/drain; performing a first thermal treatment process with respect to a resultant structure, so as to activate impurities in the source/drain, and simultaneously causing a diffusion velocity of the impurities in the source/drain to be reduced by the diffusion barrier; and forming a salicide layer.
    Type: Grant
    Filed: June 23, 2004
    Date of Patent: December 4, 2007
    Assignee: Hynix Semiconductor Inc.
    Inventor: Seung Hoon Sa