Abstract: The reactor for growing crystals on substrates comprises a reaction chamber, support for at least one seed, inlet means for at least one reaction gas, inlet for combustion gasses and means for triggering combustion between said combustion gasses. The growth of a crystal on a seed located inside the reaction chamber comprises the steps of introducing at least one reaction gas into the reaction chamber, introducing combustion gasses into the reaction chamber, triggering combustion between the combustion gasses and depositing the material so generated on the seed.

Abstract: A method of fabricating a doped metal oxide film comprising the steps of: (a) providing a semiconductor substrate in a vacuum chamber; (b) generating plasma comprising at least metal (M) , oxygen (O) and dopant ions within said chamber in the presence of an inert carrier gas; (c) forming a doped metal oxide (MO) film on said substrate from said plasma; and (d) controlling, during step (c) , the amount of O ions relative to said dopant ions within said plasma to form at least one of an n-type MO film and a p-type MO film on said substrate. A system for fabricating the doped metal oxide is also disclosed.

Abstract: A method of metalorganic chemical vapor deposition includes converting a condensed matter source to provide a first gas, the source including at least one element selected from the group consisting of gold, silver and potassium. The method further includes providing a second gas comprising zinc and a third gas comprising oxygen, transporting the first gas, the second gas, and the third gas to a substrate, and forming a p-type zinc-oxide based semiconductor layer on the substrate.

Abstract: In accordance with aspects of the invention, a method of forming a memory cell is provided, the method including forming a steering element above a substrate, and forming a memory element coupled to the steering element, wherein the memory element comprises a carbon-based material having a thickness of not more than ten atomic layers. The memory element may be formed by repeatedly performing the following steps: forming a layer of a carbon-based material, the layer having a thickness of about one monolayer, and subjecting the layer of carbon-based material to a thermal anneal. Other aspects are also described.

Abstract: There is provided a plasma processing device capable of forming a film in a favorable manner irrespective of deflection generated in an anode electrode and a cathode electrode in the case where an area of the electrodes is increased. A plasma processing device 100 includes a chamber 15, a gas introducing portion 28, an exhaust unit 29, and a high-frequency power supply unit 30. In the chamber 15, there are provided an anode electrode (first electrode) 4 having a flat-plate shape, a cathode electrode (second electrode) 12 having a flat-plate shape, and first supporting members 6 and second supporting members 5 for slidably supporting the two electrodes 4 and 12 in parallel with each other. The cathode electrode 12 is provided so as to face the anode electrode 4. The anode electrode 4 and the cathode electrode 12 are not fixed with screws or the like but are merely placed on the first supporting members 6 and the second supporting members 5.

Abstract: A semiconductor device manufacturing method according to the present invention uses a first raw material gas containing Si, a second raw material gas containing a metal element M and an oxidation gas, in which a first step of supplying the oxidation gas onto a substrate to be treated, and a second step of supplying the first raw material gas are sequentially performed. The method further includes, after the first and second steps, a step of supplying the second raw material gas or gas mixture of the first raw material gas and the second raw material gas.

Abstract: An aspect of the invention provides a method of manufacturing a method of manufacturing a semiconductor element comprises the steps of: growing epitaxially a semiconductor layer on top of a semiconductor substrate; forming a patterned portion of the grown semiconductor layer by forming a pattern by a patterning process on top of the grown semiconductor layer; removing a portion of the semiconductor layer other than the patterned portion by a first etching method with a first etchant; and immersing a resultant from the first etching method in a second etchant that etches only the semiconductor substrate by a second etching method thereby removing the substrate from the semiconductor layer.

Abstract: Raw materials are economized and a film deposition rate is improved while maintaining film evenness and high film quality. A film deposition apparatus for the continuous formation of a multilayered transparent conductive film is provided which comprises a substrate attachment part, a charging part where evacuation is conducted, a multilayer deposition treatment part comprising two or more deposition treatment parts for forming a transparent conductive film on a substrate by the MOCVD method by reacting an organometallic compound (diethylzinc), diborane, and water in a vapor phase, a substrate takeout part, a substrate detachment part, and a setter return part where the substrate setter is returned to the substrate attachment part. Film deposition is successively conducted while moving a substrate sequentially through the parts to form a multilayered transparent conductive film on the substrate.

Abstract: The present invention includes a first step of forming a nitride semiconductor layer by metal organic chemical vapor deposition by using a first carrier gas containing a nitrogen carrier gas and a hydrogen carrier gas of a flow quantity larger than that of the nitrogen carrier gas to thereby supply a raw material containing Mg and a Group V raw material containing N, and a second step of lowering a temperature by using a second carrier gas to which a material containing N is added, and hence solves the problems.

Abstract: Methods of fabricating nanowire structures and nanodevices are provided. The methods involve photolithographically depositing a nucleation center on a crystalline surface of a substrate, generating a nanoscale seed from the nucleation center, and epitaxially growing a nanowire across at least a portion of the crystalline surface starting at a nucleation site where the nanoscale seed is located.

Abstract: Disclosed is a method of producing a semiconductor device, comprising the steps of carrying a substrate with an insulating film formed on its surface into a processing chamber; processing the substrate to form silicon grains on the insulating film formed on the surface of the substrate by introducing at least a silicon-base gas into the processing chamber; and carrying the processed substrate out of the processing chamber, wherein in the processing step, a silicon-base gas and a dopant gas are introduced into the processing chamber with the temperature and the pressure inside the processing chamber being so controlled that, when the silicon-base gas is introduced singly, the silicon-base gas is not thermally decomposed under the controlled condition, in such a manner that the flow rate of the dopant gas could be equal to or more than the flow rate of the silicon-base gas.

Abstract: The present invention provides a method for producing a group 3-5 nitride semiconductor and a method for producing a light emitting device. The method for producing a group 3-5 nitride semiconductor, comprises the steps of (i), (ii), (iii) and (iv) in this order: (i) placing inorganic particles on a substrate, (ii) growing a semiconductor layer, and (iii) separating the substrate and the semiconductor layer by irradiating the interface between the substrate and the semiconductor layer with light.

Abstract: A Cd1-xZnxS film material, with a high value of thermal coefficient of resistance, in the range of 1.5% to 3.7%. The Cd1-xZnxS material has excellent characteristics for use in a microbolometer-type uncooled infrared sensor. The film material can be deposited on microbolometer membranes or any other wafer for different applications. The film material can be deposited using the MOCVD technique, thermal evaporation or a different technique to form the film material over the wafer. The Cd1-xZnxS properties can be modified controlling certain deposition parameters and different annealing techniques. The process is performed at temperature compatible with CMOS technology.

Abstract: Methods for formation of epitaxial layers containing n-doped silicon are disclosed, including methods for the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. Formation of the n-doped epitaxial layer involves exposing a substrate in a process chamber to deposition gases including a silicon source, a carbon source and an n-dopant source at a first temperature and pressure and then exposing the substrate to an etchant at a second higher temperature and a higher pressure than during deposition.

Abstract: A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes.

Abstract: Provided is a phase-change random access memory (PRAM). The PRAM includes a bottom electrode, a bottom electrode contact layer, which is formed on one area of the bottom electrode, and an insulating layer, which is formed on a side of the bottom electrode contact layer, a phase-change layer, which is formed on the bottom electrode contact layer and the insulating layer and is formed of a phase-change material having a crystallization temperature between 100° C. and 150° C., and a top electrode, which is formed on the phase-change layer.

Abstract: A method for selectively forming an epitaxial Si containing film on a semiconductor structure at low temperature. The method includes providing the structure in a process chamber, the structure containing a Si substrate having an epitaxial Si surface area and a patterned film area thereon. A Si film is non-selectively deposited onto the structure, the Si film comprising an epitaxial Si film deposited onto the epitaxial Si surface and a non-epitaxial Si film deposited onto an exposed surface of the patterned film. The non-epitaxial Si film is selectively dry etched away to form a patterned epitaxial Si film. The Si film may be a SiGe film.

Abstract: An epitaxial growth method and a semiconductor device fabrication method that improve selectivity in epitaxial growth. A gate electrode is formed over an Si substrate with a gate insulating film there between (step S1). An insulating layer is formed on the sides of the gate electrode (step S2). Portions in the Si substrate where source/drain electrodes are to be formed are etched to form recess regions (step S3). After that, HCl-H2 mixed gas for suppressing semiconductor growth on the insulating layer is supplied onto the Si substrate and the insulating layer (step S4) and SiH4-GeH4 mixed gas is supplied (step S5). By doing so, the growth of SiGe can be suppressed on the insulating layer and an SiGe layer can be made to selectively epitaxial-grow in the recess regions as the source/drain electrodes.

Abstract: A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {10 11} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {10 13} gallium nitride (GaN) grown on a {110} spinel substrate, (3) {11 22} gallium nitride (GaN) grown on a {1 100} sapphire substrate, and (4) {10 13} gallium nitride (GaN) grown on a {1 100} sapphire substrate.

Abstract: A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes.

Abstract: A method of forming a multi-layered thin film uses photolysis chemical vapor deposition (PCVD). In the method, a substrate for a process of forming the multi-layered thin film is prepared. At least two source gases are supplied to the substrate. Reaction lights having particular wavelengths are prepared, which are absorbed by each of the source gases, are prepared. The reaction lights having particular wavelengths are alternatingly emitted on the substrate to a form a predetermined multi-layered thin film. A photolysis chemical vapor deposition (PCVD) reactor is disclosed, having a chamber with a substrate support, a gas supply system for supplying a plurality of source gases to the substrate in the chamber, and a light supply system mounted at one side of the chamber. The light supply system selectively emits one of the plurality of reaction lights having different wavelengths on the substrate.