Abstract: Using printing technologies to fill conductor materials into holes in silicon substrate, the preferred embodiments of the present improve cost efficiency of through-hole connections. Using silicon substrate as cathode terminal during electrical plating that fill holes in a silicon substrate with conductors, the preferred embodiments of the present improve alignment accuracy and cost efficiency of through-hole manufacturing processes.

Abstract: Under bump passive structures, such as capacitors and inductors, may be formed using the post-processing layers in wafer level packaging. In an embodiment, a packaged semiconductor device is described which includes an under-bump capacitor formed in semiconductor device post-processing layers. As part of the post-processing a first dielectric layer is deposited on the active face of a semiconductor die and then in sequence a first metal layer, second dielectric layer and second metal layer are deposited. The under-bump capacitor is formed from a lower plate in the first metal layer and an upper plate in the second metal layer, the plates being separated by the second dielectric layer. In order to increase capacitance, the capacitor may be formed over one or more openings in the first dielectric layer, such that the layers forming the capacitor are no longer planar but follow the underlying topology.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a substrate; molding a first encapsulation above the substrate; forming a via through the first encapsulation; mounting an integrated circuit above the substrate and between sides of the first encapsulation; and forming a second encapsulation covering the integrated circuit and the first encapsulation.

Abstract: A semiconductor device includes a wiring board having connection pads thereon and a semiconductor chip mounted on the wiring board. The wiring board and the semiconductor chip are covered with a sealing portion. Conductive members are extended upward from the connection pads and are exposed from the sealing portion. Rewiring lines are connected to the exposed conductive members. Land portions are arranged on the sealing portion and are electrically connected to the conductive members through the rewiring lines.

Abstract: A method includes providing a substrate with a patterned second layer over a first layer. The second layer includes a second layer opening having a first CD equal to the CD produced by a lithographic system (CDL). CDL is larger than a desired CD (CDD). A third layer is formed to fill the opening, leaving a top surface of the second layer exposed. The second layer is removed to produce a mesa formed by the third layer. The CD of the mesa is equal to about the first CD. The mesa is trimmed to produce a mesa with a second CD equal to about CDD. A fourth layer is formed to cover the first layer, leaving a top of the mesa exposed. The substrate is etched to remove the mesa and a portion of the first layer below the mesa to form an opening in the first layer with CDD.

Abstract: Various embodiments provide a semiconductor device, including a final metal layer having a top side and at least one sidewall; and a passivation layer disposed over at least part of at least one of the top side and the at least one sidewall of the final metal layer; wherein the passivation layer has a substantially uniform thickness.

Abstract: The embodiments of mechanisms of wafer-level packaging (WLP) described above utilize a planarization stop layer to determine an end-point of the removal of excess molding compound prior to formation of redistribution lines (RDLs). Such mechanisms of WLP are used to implement fan-out and multi-chip packaging. The mechanisms are also usable to manufacture a package including chips (or dies) with different types of external connections. For example, a die with pre-formed bumps can be packaged with a die without pre-formed bumps.

Abstract: A method for forming an integrated circuit including the steps of: a) forming openings in a front surface of a first semiconductor wafer, the depth of the openings being smaller than 10 ?m, and filling them with a conductive material; b) forming doped areas of components in active areas of the front surface, forming interconnection levels on the front surface and leveling the surface supporting the interconnection levels; c) covering with an insulating layer a front surface of a second semiconductor wafer, and leveling the surface coated with an insulator; d) applying the front surface of the second wafer coated with insulator on the front surface of the first wafer supporting interconnection levels, to obtain a bonding between the two wafers; e) forming vias from the rear surface of the second wafer, to reach the interconnection levels of the first wafer; and f) thinning the first wafer to reach the openings filled with conductive material.

Abstract: An integrated circuit structure can include a first interposer and a second interposer. The first interposer and the second interposer can be coplanar. The integrated circuit structure further can include at least a first die that is coupled to the first interposer and the second interposer.

Abstract: An interconnect assembly that operates in environments well exceeding 200° C. without degradation and/or failure. The interconnect assembly of the present invention eliminates the incompatible metal interfaces of the prior art and relies on aluminum first-metal wire to electrically connect to first-metal pads on a chip and a second-metal wire to electrically connect to second-metal plated contacts on a package. Both wire types are then electrically connected together utilizing a high temperature transition pad disposed between the chip and contacts on the package, therefore eliminating incompatible metal interfaces of the prior art.

Abstract: A semiconductor device comprises a first external terminal having a first size, a plurality of second external terminals each having a second size smaller than the first size, an external terminal area in which the first external terminal and the second external terminals are arranged, and a plurality of wires connecting between the second external terminals and a plurality of circuits formed adjacent to the external terminal area and corresponding to the second external terminals. The second external terminals and the wires constitute a plurality of interfaces. Each of the interfaces includes at least one adjustment portion that adjusts a time constant of the wire so that the wires have the same time constant. At least part of the adjustment portions is located in a margin area produced in the external terminal area by a difference between the first size and the second size.

Abstract: A three dimensional stacked semiconductor structure comprises a stack including plural oxide layers and conductive layers arranged alternately, at least a contact hole formed vertically to the oxide layers and the conductive layers, and extending to one of the conductive layers, an insulator formed at the sidewall of the contact hole, a conductor formed in the contact hole and connecting the corresponding conductive layer, and the corresponding conductive layer comprises a silicide. The silicide could be formed at edges or an entire body of the corresponding conductive layer. Besides the silicide, the corresponding conductive layer could, partially or completely, further comprise a conductive material connected to the conductor. The corresponding conductive layer which the contact hole extends to has higher conductivity than other conductive layers. Also, the 3D stacked semiconductor structure could be applied to a fan-out region of a 3D flash memory.

Abstract: A structure is provided in which the back gate regions are physically separated from one another as opposed to using reversed biased pn junction diodes. In the present disclosure, the back gate regions can be formed first through a buried dielectric material of an extremely thin semiconductor-on-insulator (ETSOI) substrate. After dopant activation, standard device fabrication processes can be performed. A semiconductor base layer portion of the ETSOI substrate can then be removed from the original ETSOI to expose a surface of the back gates.

Abstract: Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming one or more openings in a front side of the semiconductor device and forming sacrificial plugs in the openings that partially fill the openings. The method further includes further filling the partially filled openings with a conductive material, where individual sacrificial plugs are generally between the conductive material and a substrate of the semiconductor device. The sacrificial plugs are exposed at a backside of the semiconductor device. Contact regions can be formed at the backside by removing the sacrificial plugs.

Abstract: According to an embodiment of the invention, a chip package is provided. The chip package includes: a substrate having an upper surface and a lower surface; a plurality of conducting pads located under the lower surface of the substrate; a dielectric layer located between the conducting pads; a trench extending from the upper surface towards the lower surface of the substrate; a hole extending from a bottom of the trench towards the lower surface of the substrate, wherein a sidewall of the hole is substantially perpendicular to the lower surface of the substrate, and the sidewall or a bottom of the hole exposes a portion of the conducting pads; and a conducting layer located in the hole and electrically connected to at least one of the conducting pads.

Abstract: A semiconductor device of the invention include a rectangular semiconductor element mounted on a substrate formed with an external input terminal, an external output terminal, and a plurality of wiring patterns connected to each of the external input terminal and the external output terminal. The semiconductor element comprises, a plurality of first electrodes formed along a first edge of a surface thereof, a plurality of second electrodes formed along an edge opposite to the first edge of the surface, a plurality of third electrodes formed in the neighborhood of a functional block, and an internal wiring for connecting the first electrodes and the third electrodes. The substrate comprises, a first wiring pattern for connecting the external input terminal and the first electrodes, a second wiring pattern for connecting the external output terminal and the second electrodes, and a third wiring pattern for connecting the first electrodes and the third electrodes.

Abstract: A structure for a signal line has the signal line having a base, a lower insulating layer formed at an upper surface of the base, a semiconductor layer disposed along a pathway at an upper surface of the lower insulating layer, at least a part of the semiconductor layer configured to transmit a signal, an upper insulating layer formed at an upper surface of the semiconductor layer, at least a part of the upper insulating layer being mounted along the semiconductor layer; and a strip conductor formed at an upper surface of the upper insulating layer, at least a part of the strip conductor being mounted along the upper insulating layer.

Abstract: A method of forming a contact includes forming an inter-layer dielectric layer to cover a gate formed on a semiconductor substrate; and forming a first hole which passes through the inter-layer dielectric layer to expose the gate, a second hole which exposes an active region of the semiconductor substrate, and a third hole which exposes the semiconductor substrate at a preset depth. Further, the method includes forming a shielding layer on the semiconductor substrate including the bottom and sidewalls of the first hole, the second hole, and the third hole; and removing the shielding layer at the bottom of the first hole and the second hole to expose the gate and the active region. Furthermore, the method includes filling the first hole, the second hole, and the third hole with a conductive material.

Abstract: An approach for forming a semiconductor device is provided. In general, the device is formed by providing a metal layer, a cap layer over the metal layer, and an ultra low k layer over the cap layer. A via is then formed through the ultra low k layer and the cap layer. Once the via is formed, a barrier layer (e.g., cobalt (Co), tantalum (Ta), cobalt-tungsten-phosphide (CoWP), or other metal capable of acting as a copper (CU) diffusion barrier) is selectively applied to a bottom surface of the via. A liner layer (e.g., manganese (MN) or aluminum (AL)) is then applied to a set of sidewalls of the via. The via may then be filled with a subsequent metal layer (with or without a seed layer), and the device may the then be further processed (e.g., annealed).

Abstract: Disclosed are a semiconductor apparatus and a manufacturing method thereof. The manufacturing method of the semiconductor apparatus includes: forming a semiconductor chip on a semiconductor substrate; adhering a carrier wafer with a plurality of through holes onto the semiconductor chip; polishing the semiconductor substrate; forming a first via hole at the rear side of the polished semiconductor substrate; forming a first metal layer below the polished semiconductor substrate and at the first via hole; and removing the carrier wafer from the polished semiconductor substrate.

Abstract: To achieve a reduction in cost of a semiconductor device, in a common board (a wiring board), a plurality of bonding leads each extend toward the center of the board, and a solder resist film as a die bonding region supporting a minimum chip is coated with a die bonding material. With this, even when a first semiconductor chip as a large chip is mounted, wire bonding can be performed without causing the die bonding material to cover the bonding leads. Thus, development cost can be reduced to reduce the cost of the semiconductor device (LGA).

Abstract: According to an embodiment of the invention, a chip package is provided. The chip package includes: a substrate having an upper surface and a lower surface; a plurality of conducting pads located under the lower surface of the substrate; a dielectric layer located between the conducting pads; a trench extending from the upper surface towards the lower surface of the substrate; a hole extending from a bottom of the trench towards the lower surface of the substrate, wherein an upper sidewall of the hole inclines to the lower surface of the substrate, and a lower sidewall or a bottom of the hole exposes a portion of the conducting pads; and a conducting layer located in the hole and electrically connected to at least one of the conducting pads.

Abstract: A semiconductor device comprising a first insulating layer, a first metal conductor layer formed over the first insulating layer, a second insulating layer comprising a low-k insulating material formed over the first metal conductor, a second metal conductor layer formed over the second insulating layer, vias formed in the second insulating layer connecting the first metal conductor layer to the second metal conductor layer, and a plurality of metal lines. One of the metal lines is expanded around one of the vias compared to metal lines around other ones of the vias so that predetermined areas around each of the vias meets a minimum metal density.

Abstract: A semiconductor package and a method of forming a semiconductor package with one or more dies over an interposer die are provided. By forming a first redistribution structure over the interposer die with TSVs, the die(s) bonded to the interposer die can have edge(s) beyond the boundary of the interposer die. In addition, a second redistribution structure may be formed on the opposite surface of the interposer die from the redistribution structure. The second redistribution structure enables reconfiguration and fan-out of bonding structures for external connectors of the interposer die.

Abstract: A component package and a method of forming are provided. A first component package may include a first semiconductor device having a pair of interposers attached thereto on opposing sides of the first semiconductor device. Each interposer may include conductive traces formed therein to provide electrical coupling to conductive features formed on the surfaces of the respective interposers. A plurality of through vias may provide for electrically connecting the interposers to one another. A first interposer may provide for electrical connections to a printed circuit board or subsequent semiconductor device. A second interposer may provide for electrical connections to a second semiconductor device and a second component package. The first and second component packages may be combined to form a Package-on-Package (“PoP”) structure.

Abstract: A semiconductor device includes a lower wiring layer, having signal lines and power supply lines extending in a Y-direction; an upper wiring layer having signal lines and power supply lines extending in an X-direction; via conductors provided in first overlap regions where corresponding signal lines overlap each other; and via conductors provided in second overlap regions where corresponding power supply lines overlap each other. The width in the X-direction of the first regions is wider than the widths in the X-direction of the second regions. Therefore, in the first regions, a plurality of via conductors can be provided. Moreover, the power supply lines are divided in the Y-direction to avoid interference with the first regions. On a plurality of lower-layer lines, two vias are placed at a minimum pitch containing one via.

Abstract: An assembly and method of making same are provided. The assembly can be formed by stacking a first semiconductor element atop a second semiconductor element and forming an electrically conductive element extending through openings of the semiconductor elements. The openings may be staged. The conductive element can conform to contours of the interior surfaces of the openings and can electrically connect conductive pads of the semiconductor elements. A dielectric region can be provided at least substantially filling the openings of the semiconductor elements, and the electrically conductive element can extend through an opening formed in the dielectric region.

Abstract: A coreless pin-grid array (PGA) substrate includes PGA pins that are integral to the PGA substrate without the use of solder. A process of making the coreless PGA substrate integrates the PGA pins by forming a build-up layer upon the PGA pins such that vias make direct contact to pin heads of the PGA pins.

Abstract: The electronic device includes a first interconnect layer and a second interconnect layer. The second interconnect layer is provided on the lower surface of the first interconnect layer. The first interconnect layer includes a via plug (first conductive plug). An end face of the via plug on the side of the second interconnect layer is smaller in area than the opposite end face. The via plug is exposed on the surface of the first interconnect layer facing the second interconnect layer. An insulating resin forming the first interconnect layer is higher in thermal decomposition temperature than an insulating resin forming the second interconnect layer.

Abstract: A plurality of metal tracks are formed in an integrated circuit die in three metal layers stacked within the die. A protective dielectric layer is formed around metal tracks of an intermediate metal layer. The protective dielectric layer acts as a hard mask to define contact vias between metal tracks in the metal layers above and below the intermediate metal layer.

Abstract: A die includes a semiconductor substrate, a through-via penetrating through the semiconductor substrate, a seal ring overlying and connected to the through-via, and an electrical connector underlying the semiconductor substrate and electrically coupled to the seal ring through the through-via.

Abstract: Embodiments of the present disclosure are directed towards a mold chase for integrated circuit package assembly and associated techniques and configurations. In one embodiment, a method includes receiving a package substrate, the package substrate including a first die mounted on the package substrate by a plurality of first interconnect structures, and a plurality of second interconnect structures disposed on the package substrate and configured to route electrical signals of a second die, protecting a top surface of individual interconnect structures of the plurality of second interconnect structures from deposition of a mold material, and depositing the mold material on the package substrate between the individual interconnect structures of the plurality of second interconnect structures. Other embodiments may be described and/or claimed.

Abstract: An embodiment of an apparatus is disclosed. For this embodiment of the apparatus, an interposer has first vias. First interconnects and second interconnects respectively are coupled on opposite surfaces of the interposer. A first portion of the first interconnects and a second portion of the first interconnects are spaced apart from one another defining an isolation region between them. A substrate has second vias. Third interconnects and the second interconnects are respectively coupled on opposite surfaces of the package substrate. A first portion of the first vias and a first portion of the second vias are both in the isolation region and are coupled to one another with a first portion of the second interconnects.

Abstract: A plurality of metal tracks are formed in a plurality of intermetal dielectric layers stacked in an integrated circuit die. Thin protective dielectric layers are formed around the metal tracks. The protective dielectric layers act as a hard mask to define contact vias between metal tracks in the intermetal dielectric layers.

Abstract: An apparatus comprises a through via formed in a substrate. The through via is coupled between a first side and a second side of the substrate. The through via comprises a bottom portion adjacent to the second side of the substrate, wherein the bottom portion is formed of a conductive material. The through via further comprises sidewall portions formed of the conductive material and a middle portion formed between the sidewall portions, wherein the middle portion is formed of a dielectric material.

Abstract: A semiconductor package device is disclosed that includes a passive energy component integrated therein. In an implementation, the semiconductor package device includes a semiconductor substrate having a first surface and a second surface. The semiconductor substrate includes one or more integrated circuits formed proximal to the first surface. The semiconductor package device also includes a passive energy component positioned over the second surface. The passive energy component is electrically connected to one or more integrated circuits. The semiconductor package device also includes an encapsulation structure disposed over the second surface and at least substantially encapsulates the passive energy component.

Abstract: A wiring board includes a ceramic substrate including a plurality of stacked ceramic layers, an internal wiring, and an electrode, the internal wiring being electrically connected to the electrode, the electrode being exposed from a first surface of the ceramic substrate; and a silicon substrate including a wiring layer, the wiring layer including a wiring pattern and a via-fill, the wiring pattern being formed on a main surface of the silicon substrate, an end of the via-fill being electrically connected to the wiring pattern, another end of the via-fill being exposed from a rear surface of the silicon substrate positioned opposite to the main surface, wherein the rear surface of the silicon substrate is anodically bonded to the first surface of the ceramic substrate; and the via-fill of the silicon substrate is directly connected to the electrode of the ceramic substrate.

Abstract: A three dimensional (3D) integrated circuit (IC) structure having improved power and thermal management is described. The 3D IC structure includes at least first and second dies. Each of the first and second dies has at least one power through silicon via (TSV) and one signal TSV. The at least one power and signal TSVs of the first die are connected to the at least one power and signal TSVs of the second die, respectively. The 3D IC structure also includes one or more peripheral TSV structures disposed adjacent to one or more sides of the first and/or the second die. The peripheral TSV structures supply at least power and/or signals.

Abstract: Methods and apparatuses for fabricating three-dimensional integrated circuits having through hole vias are provided. One aspect of the present invention is a method of gapfill for through hole vias for three-dimensional integrated circuits. The method comprises providing a semiconductor wafer having a plurality of holes for through hole vias and depositing a conformal metal layer to partially fill the holes to leave open voids. The method also includes purging the voids and cleaning the surface of the voids and using a dry deposition process to fill or close the voids. Another aspect of the present invention is an electronic device structure for a three-dimensional integrated circuit.

Abstract: One illustrative device disclosed herein includes a device substrate having a plurality of first die formed adjacent a front side of the device substrate, a glass window wafer attached to a back side of the device substrate, wherein the glass window wafer has a plurality of openings formed therein and a coefficient of thermal expansion that is within plus or minus 200-500% of the coefficient of thermal expansion of the device wafer, and a plurality of second die, each of which is positioned in one of the openings in the glass window wafer and electrically coupled to one of the first die.

Abstract: A manufacturing method of a package structure is provided. A seed layer is formed on a upper surface of a metal substrate. A patterned dry film layer is formed on a lower surface of the metal substrate and the seed layer. A portion of the seed layer is exposed by the patterned dry film layer. The patterned dry film layer is used as an electroplating mask to electroplate a circuit layer on the portion of the seed layer exposed by the patterned dry film layer. A chip is bonded to and electrically connected to the circuit layer. A molding compound is formed on the metal substrate. The molding compound encapsulates the chip, the circuit layer and the portion of the seed layer. A portion of the metal substrate and a portion of the seed layer are removed so as to expose a portion of the molding compound.

Abstract: A chip package is provided, the chip package including: a chip including at least one contact pad formed on a chip front side; an encapsulation material at least partially surrounding the chip and covering the at least one contact pad; and at least one electrical interconnect formed through the encapsulation material, wherein the at least one electrical interconnect is configured to electrically redirect the at least one contact pad from a chip package first side at the chip front side to at least one solder structure formed over a chip package second side at a chip back side.

Abstract: An aluminum interconnection apparatus comprises a metal structure formed over a substrate, wherein the metal structure is formed of a copper and aluminum alloy, a first alloy layer formed underneath the metal structure and a first barrier layer formed underneath the first alloy layer, wherein the first barrier layer is generated by a reaction between the first alloy layer and an adjacent dielectric layer during a thermal process.

Abstract: A method for manufacturing a layer arrangement in accordance with various embodiments may include: providing a first layer having a side; forming one or more nanoholes in the first layer that are open towards the side of the first layer; depositing a second layer over the side of the first layer.

Abstract: Roughly described, an integrated circuit device has a conductor extending entirely through the substrate, connected on one end to the substrate topside surface and on the other end to the substrate backside surface. In various embodiments the conductor is insulated from all RDL conductors on the backside of the substrate, and/or is insulated from all conductors and device features on any below-adjacent chip in a 3D integrated circuit structure. Methods of fabrication are also described.

Abstract: A method is provided that includes first etching a substrate according to a first mask. The first etching forms a first etch feature in the substrate to a first depth. The first etching also forms a sliver opening in the substrate. The sliver opening may then be filled with a fill material. A second mask may be formed by removing a portion of the first mask. The substrate exposed by the second mask may be etched with a second etch, in which the second etching is selective to the fill material. The second etching extends the first etch feature to a second depth that is greater than the first depth, and the second etch forms a second etch feature. The first etch feature and the second etch feature may then be filled with a conductive metal.

Abstract: A device includes a polymer, a device die in the polymer, and a plurality of Through Assembly Vias (TAVs) extending from a top surface to a bottom surface of the polymer. A bulk metal feature is located in the polymer and having a top-view size greater than a top-view size of each of the plurality of TAVs. The bulk metal feature is electrically floating. The polymer, the device die, the plurality of TAVs, and the bulk metal feature are portions of a package.

Abstract: An integrated circuit structure includes a first conductive layer and an under bump metallization layer over the first conductive layer. The first conductive layer has a first conductive region and a second conductive region electrically isolated from the first conductive region. The under bump metallization layer has a first conductive area and a second conductive area electrically isolated from the first conductive area, the first conductive area substantially located over the first conductive region and the second conductive area substantially located over the second conductive region. At least one of the first conductive area or the first conductive region includes a first protrusion extending toward the second conductive area or second conductive region, respectively. Conductive vias connect the first conductive region to the second conductive area and connect the second conductive region to the first conductive area, and the vias include at least one via connected to the first protrusion.

Abstract: A semiconductor structure and a manufacturing method of the same are provided. The semiconductor structure includes a plurality of stacked structures and a plurality of contact structures. Each of the stacked structures includes a plurality of conductive strips and a plurality of insulating strips, and the conductive strips and the insulating strips are interlaced. Each of the contact structures is electrically connected to each of the stacked structures. The contact structure includes a first conductive pillar, a dielectric material layer, a metal silicide layer, and a second conductive pillar. The dielectric material layer surrounds the lateral surface of the first conductive pillar. The metal silicide layer is formed on an upper surface of the first conductive pillar. The second conductive pillar is formed on the metal silicide layer. The upper surfaces of the first conductive pillars are coplanar.

Abstract: An interface substrate is disclosed which includes an interposer having through-semiconductor vias. An upper and a lower organic substrate are further built around the interposer. The disclosed interface substrate enables the continued use of low cost and widely deployed organic substrates for semiconductor packages while providing several advantages. The separation of the organic substrate into upper and lower substrates enables the cost effective matching of fabrication equipment. By providing an opening in one of the organic substrates, one or more semiconductor dies may be attached to exposed interconnect pads coupled to through-semiconductor vias of the interposer, enabling the use of flip chips with high-density microbump arrays and the accommodation of dies with varied bump pitches. By providing the opening specifically in the upper organic substrate, a package-on-package structure with optimized height may also be provided.