Abstract: Provided is a chip-on-board package. The chip-on-board package may include a board, a grounding pad on a first surface of the board, the grounding pad including a body portion and at least one line portion, and at least two conductive pads on the first surface, the at least two conductive pads being arranged adjacent to the body portion. The at least one line portion may extend between the at least two conductive pads and the at least one line portion may have a narrower width than the at least two conductive pads.

Abstract: A method of manufacture of an integrated circuit packaging system includes: forming a package paddle group having a first package paddle electrically isolated from a second package paddle; attaching an integrated circuit device on the first package paddle and the second package paddle; forming a standoff terminal adjacent the package paddle group and electrically connected to the integrated circuit device; connecting a paddle connector to the integrated circuit device and the first package paddle and another paddle connector to the integrated circuit device and the second package paddle; and forming an encapsulation over the integrated circuit device, the first package paddle, the second package paddle, and the standoff terminal, the encapsulation exposing a portion of the first package paddle, the second package paddle, and the standoff terminal.

Abstract: A plurality of FPGA dice is disposed upon a semiconductor substrate. In order to supply the immense power required by the plurality of FPGA dice, power is routed through the semiconductor substrate vertically from thick metal layers and large integral metal structures located on the other side of the semiconductor substrate. Because the semiconductor substrate has a different coefficient of thermal linear expansion than metal layers in contact with the substrate, delamination may occur when the structure is subject to changes in temperature. To prevent delamination of metal layers connected to the semiconductor substrate and in electrical contact with the integral metal structures, the integral metal structures are manufactured with an array of post portions. During changes in temperature, the post portions of the integral metal structures bend and slide relative to metal layers connected to the semiconductor substrate and prevent linear stresses that may otherwise cause delamination.

Abstract: A semiconductor chip and a package substrate may be directly connected on the basis of form closure by providing appropriately shaped complementary contact structures in the semiconductor chip and the package substrate. Consequently, solder material may no longer be required and thus any elevated temperatures during the assembly process may be avoided, which may conventionally result in significant stress forces, thereby creating damage, in particular in very complex metallization systems.

Abstract: A system and method is disclosed for bonding a substrate to a semiconductor die that is prone to curling when subjected to an elevated temperature in a solder reflow oven, for example, thereby improving the electrical and mechanical bonding for large dies, wafers, chips, and photovoltaic cells. In one embodiment, the substrate is adapted to curl to the same degree as the die to form a uniform gap between the substrate and die across the boundary there between. In another embodiment, solder used to bond the die and substrate is applied such that the volume deposited varies based on the expected gap between the die and substrate when heated to the melting temperature of the solder.

Abstract: A semiconductor device includes a substrate having external connection terminals, and a semiconductor chip mounted over a semiconductor-chip mounting portion of the substrate. The external connection terminals are formed by sequentially forming an electroless nickel plating layer, an electroless gold plating layer, and an electrolytic gold plating layer on a terminal portion formed on a surface of the substrate.

Abstract: A semiconductor device includes a semiconductor element having a main surface where an outside connection terminal pad is provided. The semiconductor element is connected to a conductive layer on a supporting board via a plurality of convex-shaped outside connection terminals provided on the outside connection terminal pad and a connection member; and the connection member commonly covers the convex-shaped outside connection terminals.

Abstract: An integrated circuit, a circuit system and method of manufacturing such is disclosed. One embodiment provides a circuit chip including a first contact field on a chip surface; and an insulating layer on the chip surface. The insulating layer includes a flexible material. A contact pillar is coupled to the first contact field and extends from the chip surface through the insulating layer. The contact pillar includes a conductive material.

Abstract: The invention relates to a semiconductor device with a semiconductor chip, on which a terminal contact formed in one piece, a patterned metallization layer, contacting the terminal contact, and a connecting layer are successively arranged, the patterned metallization layer and the patterned connecting layer forming an electrically conducting contact layer.

Abstract: Interconnect, i.e., BEOL structures comprising at least one thin film resistor that is located at the same level as that of a neighboring conductive interconnect are provided. The present invention also provides a method of fabricating such interconnect structures utilizing processing steps that are compatible with current interconnect processing. Moreover, the inventive method of the present invention provides better technology extendibility in terms of higher density than prior art schemes.

Abstract: An interconnect structure of an integrated circuit and manufacturing method therefore are provided, relating to an interconnect structure of flexible packaging. The interconnect structure includes a first and a second conductive pads. A plurality of tiny and conductive first pillars is respectively formed on the first and second pads. With different densities and thicknesses of the first and second pillars, a contact strength can be generated when the pillars interconnecting with each other, such that the pillars are connected closely. Furthermore, the interconnect structure can also be used to connect with fibers made of conductive materials. Moreover, the higher the density of the pillars, the stronger the contact strength. And, electronic substrates and active or passive electronic elements can be stuck on the other side of each pad. Therefore, the interconnect structure can maintain flexibility and have high reliability without being enhanced by any thermosetting polymer.

Abstract: A semiconductor device having pads is provided. The semiconductor device includes first pads formed along a first row, and second pads formed along a second row. The first via contact portions extending from the first pads toward the second row, and second via contact portions extending from the second pads toward the first row. The first and second via contact portions are arranged along a third row between the first and second rows.

Abstract: A substrate includes a substrate; a number of pad redistribution chips stacked on the substrate and on one another after being rotated 90° in a predetermined direction relative to one another, the pad redistribution chips having a number of center pads positioned at the center thereof, a number of (+) edge pads positioned on an end thereof while corresponding to those of the center pads lying in (+) direction from a middle center pad located in the middle of the center pads, a number of (?) edge pads positioned on the other end thereof while corresponding to those of the center pads lying in (?) direction with symmetry to those of the center pads lying in the (+) direction, and a number of traces for electrically connecting the center pads to the corresponding (±) edge pads, respectively; a flexible PCB for electrically connecting the substrate to the pad redistribution chips; and an anisotropic dielectric film for electrically connecting the pad redistribution chips to the flexible PCB and the substrate to t

Abstract: A semiconductor device including: a semiconductor substrate including an electrode; a resin protrusion formed on the semiconductor substrate; and an interconnect electrically connected to the electrode and formed to extend over the resin protrusion. The interconnect includes a first portion formed on a top surface of the resin protrusion and a second portion formed on a side of a lower portion of the resin protrusion. The second portion has a width smaller than a width of the first portion.

Abstract: Methods, techniques, and structures relating to die packaging. In one exemplary implementation, a die package interconnect structure includes a semiconductor substrate and a first conducting layer in contact with the semiconductor substrate. The first conducting layer may include a base layer metal. The base layer metal may include Cu. The exemplary implementation may also include a diffusion barrier in contact with the first conducting layer and a wetting layer on top of the diffusion barrier. A bump layer may reside on top of the wetting layer, in which the bump layer may include Sn, and Sn may be electroplated. The diffusion barrier may be electroless and may be adapted to prevent Cu and Sn from diffusing through the diffusion barrier. Furthermore, the diffusion barrier may be further adapted to suppress a whisker-type formation in the bump layer.

Abstract: Semiconductor packages that contain a system-in-a-package and methods for making such packages are described. The semiconductor packages contain a first semiconductor die resting on a middle of a land pad array, a second die disposed over the first die and resting on routing leads that are connected to the land pad array, a third die resting on the backside of the second die and connected to the land pad array by wire bonds, and a passive device and/or a discrete device resting on device pads. The packages also contain thermal pads which operate as a heat sink. The land pad array is formed from etching the leadframe. The semiconductor packages have a full land pad array with a thin package size while having a system-in-a-package design. Other embodiments are also described.

Abstract: An integrated circuit (IC) carrier assembly comprises a printed circuit board (PCB), a carrier soldered to the PCB, the carrier comprising a plurality of electrical contact islands surrounding a receiving zone for receiving an IC, a first resilient suspension means interconnecting pairs of adjacent islands, and a second resilient suspension means connecting the islands adjacent to the receiving zone with the receiving zone.

Abstract: A semiconductor device includes a semiconductor chip with bonding pads, the bonding pads being arranged along one side of an element forming surface of the semiconductor chip, a lead frame including first and second internal leads arranged such that tips thereof correspond to some of the bonding pads of the semiconductor chip, and first and second bonding wires by which the first internal leads and the some of the bonding pads are bonded to each other. The semiconductor device further includes a hanging pin section provided on the element non-forming surface of the semiconductor chip, and a sealing member with which the semiconductor chip is sealed including the hanging pin section and a bonding section between the first and second internal leads and the first and second bonding wires.

Abstract: A semiconductor device, including methods and arrangements for making the same, are described. The device includes an integrated circuit die having a plurality of bond pads. At least one bond pad on the active surface of the die is an extended I/O pad. Each extended I/O pad extends to at least one peripheral side edge of the die.

Abstract: A vertically mountable semiconductor device assembly including a semiconductor device and a mechanism for attaching the semiconductor device to a carrier substrate. The semiconductor device has each of its bond pads disposed proximate a single edge thereof. Preferably, at least a portion of the semiconductor device is exposed. An alignment device is attached to a carrier substrate. A mounting element on the vertically mountable semiconductor device package engages the alignment device to interconnect the semiconductor device and the alignment device. Preferably, the alignment device secures the vertically mountable semiconductor device package perpendicular relative to the carrier substrate. The distance between the bond pads and corresponding terminals on the carrier substrate is very small in order to reduce impedance. The vertically mountable semiconductor device package may also be readily user-upgradable.

Abstract: A method for manufacturing a wafer level package of an integrated circuit element for direct attachment to a wiring board is disclosed. An integrated circuit element includes input/output pads located on an active side. A non-conductive support structure is formed on the active side of the integrated circuit element in an area that is free from input/output pads. A conductive path is formed upon the support structure and a non-conductive coating is formed on over the active side of the integrated circuit element such that a surface is formed which leaves interface pads accessible.

Abstract: An integrated circuit package system including providing a plurality of substantially identical package leads formed in a single row, and attaching bond wires having an offset on adjacent locations of the package leads.

Abstract: A package system including providing a first semiconductor die; mounting a second semiconductor die on the first semiconductor die using an inter-die interconnect to form a flip-chip assembly; and attaching the flip-chip assembly on a package substrate with a contact pad, a test connection, a z-bond pad, and a die receptacle, with the first semiconductor die in the flip-chip assembly fitting inside the die receptacle.

Abstract: A structure and a method for forming the same. The structure includes a first dielectric layer, an electrically conductive bond pad on the first dielectric layer, and a second dielectric layer on top of the first dielectric layer and the electrically conductive bond pad. The electrically conductive bond pad is sandwiched between the first and second dielectric layers. The second dielectric layer includes N separate final via openings such that a top surface of the electrically conductive bond pad is exposed to a surrounding ambient through each final via opening of the N separate final via openings. N is a positive integer greater than 1.

Abstract: A surface mounting structure applied to a BGA includes a substrate, a first soldering pad, a first lead, a second lead and a passivation layer. The substrate has a top surface for the first soldering pad to be disposed thereon. The first lead has a first end connected to the first soldering pad and a second end. The second lead has a third end connected to the first soldering pad and a fourth end connected to the second end of the first lead. A well is defined among the first lead, the second lead, and the first soldering pad. The passivation layer covers the top surface of the substrate, and has a first opening corresponding to the top of the first soldering pad to expose the first soldering pad and the well. Chip failure resulting from the warp occurring at four corners in the surface mounting procedure is prevented.

Abstract: The electrodes (7) and the contact zones (15) are structured in a film of a transparent conductive oxide (TCO), deposited on a transparent support (1) possibly coated with an intermediate film (3), while being separated by dielectric spaces (9) formed by nano fissures (11) obtained by UV radiation and passing through the TCO film. A protective film (13) can coat the electrodes (7) and the dielectric spaces (9).

Abstract: A semiconductor device (100) includes a semiconductor substrate (2), an inductor (4) provided on the semiconductor substrate (2), a metal ball (8) provided on the inductor (4) so as to come into contact with the inductor (4), and a bonding wire (10) electrically connected to the metal ball (8). The semiconductor device (100) exchanges signals with an external via the inductor (4) and the metal ball (8). The inductor (4) also serves as the bonding pad and therefore the inductor and the bonding pad need not to be arranged in pairs.

Abstract: A semiconductor device including: a semiconductor substrate including an electrode; a resin protrusion formed on the semiconductor substrate; and an interconnect electrically connected to the electrode and formed to extend over the resin protrusion. The interconnect includes a first portion formed on a top surface of the resin protrusion and a second portion formed on a side of a lower portion of the resin protrusion. The second portion has a width smaller than a width of the first portion.

Abstract: A semiconductor device having a trench in the side portion of a conducting line pattern and methods of forming the same. The semiconductor device provides a way of preventing an electrical short between the conducting line pattern and a landing pad adjacent to the conducting line pattern. There are disposed two conducting line patterns on a semiconductor substrate. Each of the conducting line patterns includes a conducting line and a conducting line capping layer pattern stacked thereon. Each of the conducting line patterns has a trench between the conducting line capping layer pattern and the conducting line. Conducting line spacers are formed between the conducting line patterns. One conducting line spacer covers a portion of a sidewall of one of the conducting line patterns, and the remaining conducting line spacer covers an entire sidewall of the remaining conducting line pattern. A landing pad is disposed between the conducting line patterns.

Abstract: A semiconductor package substrate proposed by the invention includes a base body and a plurality of finger pads disposed on surface of the base body, wherein the finger pads are arranged in such a way that an angle is formed between connecting line of centers of two adjacent finger pads and the direction in which the finger pads are arranged. The finger pads are waterdrop shaped finger pads with arc ends and angle ends alternately disposed on surface of the substrate, alternately disposed waterdrop shaped finger pads and arc shaped finger pads, or alternately disposed arc shaped finger pads at a predetermined spacing. According to the present invention, distance between adjacent finger pads is reduced and problem of short circuit as a result of erroneous contact between bonding wire and adjacent finger pad is prevented.

Abstract: A semiconductor device including a first substrate having first and second surfaces, multiple first mounting pads formed on the first surface of the first substrate and for mounting a first semiconductor element on the first surface of the first substrate, multiple first connection pads formed on the first surface of the first substrate and positioned on the periphery of the multiple first mounting pads, a second substrate formed on the first substrate and having first and second surfaces, the second substrate having a second penetrating electrode which penetrates through the first and second surfaces of the second substrate, multiple second mounting pads formed on the first surface of the second substrate and for mounting a second semiconductor element, and a conductive member formed on one of the first connection pads and electrically connecting an end portion of the second penetrating electrode and the one of the first connection pads.

Abstract: A multilayer wiring board includes: a substrate; connection pads arranged in a square grid fashion; and wiring patterns. Relationship between the connection pads and the wiring patterns satisfies: {(Ndl+1)P?d?s}/(w+s)>2Ndr+Ndl(a+1)+2a, wherein P is a pitch of the connection pads, d is a diameter of the connection pads, s is a minimum interval between the wiring patterns and is a minimum interval between the wiring pattern and the connection pad that are adjacent to each other, w is a minimum width of the wiring patterns, Ndl is the number of non-pad rows in each of the non-pad regions, Ndr is the number of non-pad columns in each of non-pad region, and a is an integer of (P?d?s)/(w+s).

Abstract: In a semiconductor device, a semiconductor chip is connected to a board through an interconnection layer. A plurality of first terminals, a plurality of second terminals and a plurality of third terminals are provided on the board, the interconnection layer and the semiconductor chip, respectively. The second terminals are connected to the first terminals through the board. The third terminals are connected to the second terminals. The interconnection layer is rotatable about a rotation axis perpendicular to an upper surface of the interconnection layer. A first terminal having a specific function out of the first terminals and a third terminal having the specific function out of the third terminals are connected to each other by rotating the interconnection layer.

Abstract: A semiconductor device comprises a semiconductor chip having a rear surface provided with an uneven structure having a preselected pattern and comprised of concave and convex portions. The preselected pattern of the uneven structure is tilted so as to be in parallel to a crystal orientation of <110> of the semiconductor chip. An electrode is disposed on the concave and convex portions of the uneven structure.

Abstract: A semiconductor device includes plural electrode pads arranged in an active region of a semiconductor chip, and wiring layers provided below the plural electrode pads wherein occupation rates of wirings arranged within the regions of the electrode pads are, respectively, made uniform for every wiring layer. To this end, in a region where an occupation rate of wiring is smaller than those in other regions, a dummy wiring is provided. On the contrary, when the occupation rate of wiring is larger than in other regions, slits are formed in the wiring to control the wiring occupation rate. In the respective wirings layers, the shapes, sizes and intervals of wirings below the respective electrode pads are made similar or equal to one another.

Abstract: Some of the embodiments of the present invention provide an integrated circuit device including a first metal interconnect, an end of which is coupled to a core of the integrated circuit device, a second metal interconnect, an end of which is coupled to a first input/output (I/O) pin, and a third metal interconnect configured to be coupled to the first metal interconnect and to the second metal interconnect. Other embodiments are also described and claimed.

Abstract: A semiconductor device including: a semiconductor substrate including an electrode; a resin protrusion formed on the semiconductor substrate and including a plurality of first portions and a second portion disposed between two of the first portions adjacent to each other; and an interconnect electrically connected to the electrode and extending over one of the first portions of the resin protrusion. A lower portion of a side surface of the second portion includes a portion which extends in a direction intersecting a direction in which the resin protrusion extends.

Abstract: A semiconductor test pad interconnect structure with integrated die-separation protective barriers. The interconnect structure includes a plurality of stacked metal layers each having an electrically conductive test pad separated from other test pads by a dielectric material layer. In one embodiment, at least one metallic via bar is embedded into the interconnect structure and electrically interconnects each of the test pads in the metal layers together. The via bar extends substantially along an entire first side defined by each test pad in some embodiments. In other embodiments, a pair of opposing via bars may be provided that are arranged on opposite sides of a die singulation saw cut line defined in a scribe band on a semiconductor wafer.

Abstract: Layers suitable for stacking in three dimensional, multi-layer modules are formed by interconnecting a ball grid array electronic package to an interposer layer which routes electronic signals to an access plane. The layers are under-filled and may be bonded together to form a stack of layers. The leads on the access plane are interconnected among layers to form a high-density electronic package.

Abstract: A ball grid array device includes a substrate, further including a first major surface and a second major surface. An array of pads is positioned on one of the first major surface or the second major surface. At least some of the pads include a barrier layer having pores or openings therein. When solder is placed on the pad, the barrier layer forms an intermetallic compound at a rate different from the rate of the intermetallic compound formed between the pad and the solder. The result is a solder ball on a pad that has a first intermetallic compound and a second intermetallic compound.

Abstract: A semiconductor package board for mounting thereon a semiconductor chip includes a metal base having an opening for receiving therein the semiconductor chip and a multilayer wiring film layered onto the metal base. The semiconductor chip is flip-chip bonded onto the metal pads disposed on the multilayer wiring film within the opening. The surface of the metal base is flush with the top surface of the semiconductor chip received in the opening. The resultant semiconductor device has a larger number of external pins and a smaller deformation without using a stiffener.

Abstract: Methods and arrangements to attach a QFN to a PCB, systems which include a QFN attached to a PCB, and apparatuses for controlling the deposit of solder upon a PCB are disclosed. Embodiments include transformations, code, state machines or other logic to calculate a total area for the QFN IO pads. Embodiments may then determine a total area for the regions of solder applied to the PCB thermal pad to which the QFN thermal pad may be connected in dependence upon the calculated total area for the QFN IO pads. In some embodiments, the total area of the solder regions applied to the PCB thermal pad is approximately equal to the calculated total area for the QFN IO pads. In many embodiments, the number of regions of solder and the shape of the regions of solder is determined.

Abstract: A substrate with reduced substrate warpage and a semiconductor package utilizing the substrate are revealed. The substrate primarily comprises a core where a wiring layer and a first solder mask are formed on one surface of the core, and a second solder mask and a die-attaching layer are formed on the other surface of the core. The first solder mask has a thickness difference with respect to the second solder mask in a manner to reduce the warpage of the substrate caused by thermal stresses due to temperature differences can be well under control. Therefore, the manufacturing cost of the substrate can be lower without adding extra stiffeners to achieve substrate warpage control during semiconductor packaging processes.

Abstract: The semiconductor device has a fuse and a fuse opening created above the fuse. The fuse is divided into a plurality of lines at a crossing portion where the fuse crosses with an edge of the fuse opening. The plurality of divided lines of the fuse 101 are in parallel with each other and in perpendicular to the edge of the fuse opening.

Abstract: A semiconductor component comprises a semiconductor body including a front side and a number of cell strips. Each of the cell strips includes a terminal zone of a first type arranged on the front side of the semiconductor body and a terminal zone of a second type arranged on the front side of the semiconductor body. A patterned first metallization layer, a patterned second metallization layer, and a patterned third metallization layer are arranged successively on the front side. A first plurality of conductive lines are formed in the first metallization layer and a second plurality of conductive lines are formed in the second metallization layer. The second plurality of conductive lines cross the first plurality of conductive lines at crossover locations. The second plurality of conductive lines are electrically conductively connected to the first plurality of conductive lines at predetermined crossover locations.

Abstract: A semiconductor device includes a semiconductor chip and a wiring substrate. The wiring substrate is configured to be electrically connected to the semiconductor chip, and have a plurality of terminals arranged on an surface opposite to a surface on which the semiconductor chip is mounted. The plurality of terminals includes a plurality of first terminals configured to be arranged closely to each other, and a plurality of second terminals configured to be arranged so as to surround the plurality of first terminals. The plurality of second terminals is provided such that terminals of the semiconductor chip are connected to outer terminals through the plurality of second terminals. Each of the plurality of first terminals is not provided with a metal ball, while each of the plurality of second terminals is provided with a metal ball.

Abstract: A bonding pad structure for an optoelectronic device. The bonding pad structure comprises a carrier substrate having a bonding pad region and an optoelectronic device region. An insulating layer is disposed on the carrier substrate, having an opening corresponding to the bonding pad region. A bonding pad is embedded in the insulating layer under the opening to expose the top surface thereof. A device substrate is disposed on the insulating layer corresponding to the optoelectronic device region. A cap layer covers the device substrate and the insulating layer excluding the opening. A conductive buffer layer is disposed in the opening to directly contact the bonding pad. The invention also discloses a method for fabricating the same.

Abstract: The present invention relates to a semiconductor package transformer. There is provided a semiconductor package transformer including: a case where an opening into which a semiconductor package having a chip mounted on a substrate is inserted is formed on its front surface and an open part exposing is formed on its upper surface; and a plurality of holes that are formed on the bottom surface of the case.

Abstract: A semiconductor device package (10) with a substantially rectangular shape comprising: a die attach pad (12) having a top surface and a bottom surface; a plurality of contact pads (26i-26n) provided in at least four rows that correspond to the rectangular shape of the package, each contact pad having a top surface and a bottom surface; at least two tie bars (18) for supporting the die attach pad until the singulation of the package during manufacturing thereof the tie bars having a top surface and a bottom surface and extending from the die attach pad towards a corner of the package; —a semiconductor die (20) mounted on the top surface of the die attach pad (12) and having bonding pads (44) formed thereon; a plurality of electrical connections between selected ones of the bond pads (44) and corresponding ones of the contact pads (26i-26n); an encapsulation encapsulating the semiconductor die (20), the top surface of the die attach pad (12), the electrical connections, the top surface of the tie bars (18) and

Abstract: A semiconductor device including: a semiconductor substrate including an electrode; a resin protrusion formed on the semiconductor substrate; and an interconnect electrically connected to the electrode and formed to extend over the resin protrusion. The interconnect includes a first portion formed on a top surface of the resin protrusion and a second portion formed on a side of a lower portion of the resin protrusion. The second portion has a width smaller than a width of the first portion.