Abstract: Semiconductor packages that contain a system-in-a-package and methods for making such packages are described. The semiconductor packages contain a first semiconductor die resting on a middle of a land pad array, a second die disposed over the first die and resting on routing leads that are connected to the land pad array, a third die resting on the backside of the second die and connected to the land pad array by wire bonds, and a passive device and/or a discrete device resting on device pads. The packages also contain thermal pads which operate as a heat sink. The land pad array is formed from etching the leadframe. The semiconductor packages have a full land pad array with a thin package size while having a system-in-a-package design. Other embodiments are also described.

Abstract: A multiple encapsulation integrated circuit package-in-package system includes: dicing a top integrated circuit wafer having a bottom encapsulant thereon to form a top integrated circuit die with the bottom encapsulant; positioning internal leadfingers adjacent and connected to a bottom integrated circuit die; pressing the bottom encapsulant on to the bottom integrated circuit die; connecting the top integrated circuit die to external leadfingers adjacent the internal leadfingers; and forming a top encapsulant over the top integrated circuit die.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a lead; mounting an inner package so that the lead is peripheral to the inner package, and the inner package having a connection pad; forming an exposed terminal interconnect on the connection pad; and encapsulating the inner package, and partially encapsulating the exposed terminal interconnect with an encapsulation.

Abstract: A stackable multi-chip package system is provided including forming an external interconnect, having a base and a tip, and a paddle; mounting a first integrated circuit die over the paddle; stacking a second integrated circuit die over the first integrated circuit die in a active side to active side configuration; connecting the first integrated circuit die and the base; connecting the second integrated circuit die and the base; and molding the first integrated circuit die, the second integrated circuit die, the paddle, and the external interconnect with the external interconnect partially exposed.

Abstract: A semiconductor device comprises a first semiconductor die and a second semiconductor die. The first semiconductor die comprises a at least one first bond pads formed on a peripheral region of the first semiconductor die, a at least one re-distributed layer (RDL) pads formed on a center region of the first semiconductor die, and a at least one wire routes interconnecting the first bond pads and the RDL pads. The second semiconductor die is disposed over the first semiconductor die, wherein the second semiconductor die has a at least one second bond pads electrically connecting to the RDL pads via bonding wires; wherein the RDL pad is supported by at least a buffer layer.

Abstract: A layered chip package includes a main body, and wiring disposed on at least one side surface of the main body. The main body has: a main part having a top surface and a bottom surface and including a plurality of layer portions stacked; and a plurality of terminals arranged on at least one of the top and bottom surfaces of the main part and electrically connected to the wiring. A manufacturing method for the layered chip package includes: fabricating a plurality of first layered substructures each including a plurality of pre-separation main bodies arrayed; fabricating a second layered substructure by stacking the first layered substructures; cutting the second layered substructure into a block in which a plurality of pre-separation main bodies are arrayed in two directions; forming the wiring simultaneously for the plurality of pre-separation main bodies included in the block; and separating the pre-separation main bodies from each other.

Abstract: In accordance with the present invention, there is provided multiple embodiments of a semiconductor package including two or more semiconductor dies which are electrically connected to an underlying substrate through the use of conductive wires, some of which may be fully or partially encapsulated by an adhesive or insulating layer of the package. In a basic embodiment of the present invention, the semiconductor package comprises a substrate having a conductive pattern disposed thereon. Electrically connected to the conductive pattern of the substrate are first and second semiconductor dies. The first semiconductor die and a portion of the substrate are covered by an adhesive layer. The second semiconductor die, the adhesive layer and a portion of the substrate are in turn covered by a package body of the semiconductor package.

Abstract: A semiconductor device includes a semiconductor chip, a supporting body that is disposed below the semiconductor chip and supports the semiconductor chip, a spacer that is fixed onto the first semiconductor chip, and a substrate that is located below the first semiconductor chip and electrically connected to the semiconductor chip with a wire. At least a part of the peripheral portion of the semiconductor chip is an overhang portion that projects more laterally than the peripheral portion of the supporting body. A covering portion that covers a part of the upper surface of the overhang portion is formed in the spacer. The wire is connected to a region in the upper surface of the overhang portion, the region being lateral to the outermost periphery of the covering portion of the spacer and not being covered with the covering portion of the spacer.

Abstract: A semiconductor device is configured to provide current and voltage isolation inside an integrated circuit package. The semiconductor device includes first and second semiconductor dies, a first isolating block positioned on the first semiconductor die, and a second isolating block positioned on the second semiconductor die. The semiconductor device also includes a first interconnect coil having a plurality of wires connecting the first semiconductor die to the second isolating block, and a second interconnect coil having a plurality of wires connecting the second semiconductor die to the first isolating block.

Abstract: A multi-chip stack module provides increased circuit density for a given surface chip footprint. The multi-chip stack module comprises support structures alternating with standard surface mount type chips to form a stack wherein the support structures electrically interconnect the chips. Various embodiments disclose a structure and method for interconnecting a plurality of generally planar chips in a vertical stack such that common signals are connected in the stack and individually-accessed signals are separated within the stack.

Abstract: A semiconductor wafer contains a plurality of die with contact pads disposed on a first surface of each die. Metal vias are formed in trenches in the saw street guides and are surrounded by organic material. Traces connect the contact pads and metal vias. The metal vias can be half-circle vias or full-circle vias. Metal vias are also formed through the contact pads on the active area of the die. Redistribution layers (RDL) are formed on a second surface of the die opposite the first surface. Repassivation layers are formed between the RDL for electrical isolation. The die are stackable and can be placed in a semiconductor package with other die. The vias through the saw streets and vias through the active area of the die, as well as the RDL, provide electrical interconnect to the adjacent die.

Abstract: In a first embodiment, an apparatus and a method of fabrication thereof includes a substrate, a controller formed on a first integrated circuit (IC) die and disposed on the substrate, a second IC die embodying circuitry configured to enable communication between the controller and an external device, first I/O pads disposed on the first IC die, second I/O pads disposed on the second IC die, wire bonding interconnections coupling at least one of the first I/O pads with at least one of the second I/O pads, and a memory array formed on a third IC die and configured to enable communication with the controller. In a second embodiment the memory array is alternatively integrated into the first IC die.

Abstract: In one embodiment, a semiconductor package disclosed herein can be generally characterized as including a resin substrate having a first recess, a first interconnection disposed on a surface of the first recess, a first semiconductor chip disposed in the first recess, and an underfill resin layer substantially filling the first recess and covering a side surface of the first semiconductor chip. The first semiconductor chip is electrically connected to the first interconnection.

Abstract: A power semiconductor device has a power field effect transistors connected in a bridge circuit (16), parallel circuit or series circuit (18), the power semiconductor device (30) having a base power semiconductor chip (1) with large-area external contacts (S1, D1) on the top side (31) and rear side (32) and carrying at least one stacked power semiconductor chip (2). The stacked power semiconductor chip (2) is surface-mounted with at least one large-area external electrode (D2) on a correspondingly large-area external electrode (S1) of the top side (31) of the base power semiconductor chip (1). At least one metallic structured spacer (33) is arranged between the surface-mounted external electrodes (S1, D2) of the base power semiconductor chip (1) and the stacked power semiconductor chip (2). The structure of the spacer (33) has at least one cutout (34) for a non-surface-mountable connecting element (35) of the base power semiconductor chip (1).

Abstract: An integrated circuit package system including: providing a substrate; mounting an integrated circuit above the substrate; mounting an inner stacking module, having an inner stacking module encapsulation and a molded integral step molded in the inner stacking module encapsulation, above the integrated circuit; and encapsulating the inner stacking module, and the integrated circuit with an encapsulation.

Abstract: A stack package comprises a substrate having a circuit pattern; at least two semiconductor chips stacked on the substrate, having a plurality of through-via interconnection plugs and a plurality of guard rings which surround the respective through-via interconnection plugs, and connected with each other by the medium of the through-via interconnection plugs; a molding material for molding an upper surface of the substrate including the stacked semiconductor chips; and solder balls mounted to a lower surface of the substrate.

Abstract: A method for manufacturing an integrated circuit package system includes: providing a base package including a first integrated circuit coupled to a base substrate by an electrical interconnect formed on one side; and mounting an offset package over the base package, the offset package electrically coupled to the base substrate via a system interconnect.

Abstract: A stacked integrated circuit package system includes: mounting a first integrated circuit over a first carrier; mounting a second integrated circuit package system having a second carrier with an intra-stack interconnect attached thereto and with the intra-stack interconnect over the first carrier and the first integrated circuit; and forming an intra-stack encapsulation between the first carrier and the second carrier surrounding the intra-stack interconnect.

Abstract: Provided are a stack package and a stack packaging method. The stack package includes: a first package; and a second package stacked on the first package, wherein external leads of the first package and the second package are directly connected to one another and inner leads thereof are arranged in different shapes so that the Chip Select signal of the second package are input through a No Select pin of the first package.

Abstract: A semiconductor device has first and second wafers having bond pads. The bond pad of the second wafer is connected to the bond pad of the first wafer using a conductive adhesive. A first interconnect structure is formed within the second wafer and includes a first via formed in a back surface of the second wafer to expose the bond pad of the second wafer. A first metal layer is formed conformally over the first via and is in electrical contact with the bond pad of the second wafer. A third wafer is mounted over the second wafer by connecting a bond pad formed over a front surface of the third wafer to the first metal layer. A second interconnect structure is formed over a backside of the third wafer opposite the front surface. The second interconnect structure is electrically connected to the first metal layer.

Abstract: A layered chip package includes a main body including a plurality of layer portions, and wiring disposed on a side surface of the main body. Each layer portion includes a semiconductor chip, an insulating portion covering at least one side surface of the semiconductor chip, and a plurality of electrodes connected to the semiconductor chip. The insulating portion has an end face located at the side surface of the main body on which the wiring is disposed. Each electrode has an end face surrounded by the insulating portion and located at the side surface of the main body on which the wiring is disposed. To manufacture the layered chip package, a layered chip package substructure is fabricated by: processing a semiconductor wafer to form a plurality of pre-semiconductor-chip portions aligned; forming at least one groove extending to be adjacent to at least one of the pre-semiconductor-chip portions; forming an insulating layer to fill the groove; and forming the electrodes.

Abstract: Provided are a semiconductor device and a method of fabricating the same, and more particularly, a semiconductor package and a method of fabricating the semiconductor package. The semiconductor package includes a first package that comprises a first substrate, at least one first semiconductor chip stacked on the first substrate, and first conductive pads exposed on a top surface of the first substrate; a second package disposed below the first package such that the second package comprises a second substrate, at least one second semiconductor chip, and second conductive pads exposed on a bottom surface of the second substrate; and a connection unit that extends from the first conductive pads to the second conductive pads such that the connection unit covers a side surface of the first package and a side surface of the second package in order to electrically connect the first package to the second package.

Abstract: A reconfigurable high performance computer occupies less than 360 cubic inches and has an approximate compute power of 0.7 teraflops per second while consuming less than 1000 watts. The computer includes a novel stack of semiconductor substrate assemblies. Some semiconductor substrate assemblies involve field programmable gate array (FPGA) dice that are directly surface mounted, as bare die, to a semiconductor substrate. Other semiconductor substrate assemblies of the stack involve bare memory integrated circuit dice that are directly surface mounted to a semiconductor substrate. Elastomeric connectors interconnect adjacent semiconductor substrates proceeding down the stack. Tines of novel comb-shaped power bus bar assembly structures extend into the stack to supply DC supply voltages. The supply voltages are supplied from bus bars, through vias in the semiconductor substrates, and to the integrated circuits on the other side of the substrates.

Abstract: A method of forming a wafer level stack structure, including forming a first wafer including a first device chip, wherein the first device chip includes a plurality of input/output (I/O) pads, forming a second wafer including a second device chip, wherein each second device chip contains a second plurality of I/O pads, the second device chip is approximately equal in size to the first chip size, stacking the first wafer and the second wafer, and coupling the first wafer and the second wafer to each other. A method of forming a system-in-package for containing a wafer level stack structure, including forming a wafer level stack structure including a first device chip having a first plurality of input/output (I/O) pads and a second device chip having a second plurality of I/O pads, and forming a common circuit board to which the wafer level stack structure is connected.

Abstract: Provided are semiconductor packages and electronic systems including the same. A substrate is provided. A plurality of semiconductor chips may be stacked the substrate, and each of them may include at least one electrode pad. At least one of the plurality of semiconductor chips may include at least one redistribution pad configured to electrically connect with the at least one electrode pad.

Abstract: A method for of manufacturing integrated circuit packages and a multi-chip integrated circuit package are disclosed. According to the method, a first die is attached onto a first side of a set of leads of a leadframe, and an adhesive is applied onto the set of leads at a second side opposite to the first side. A second die is attached onto the adhesive. The adhesive fills into the gaps defined by the set of leads. The adhesive is thereafter cured. In a multi-chip integrated circuit package made according to the method, the adhesive attaching the second die fills the gaps between the leads so that to avoid formation of internal cavities of the package.

Abstract: A semiconductor package includes a substrate having contacts, and a discrete component on the substrate in electrical communication with the contacts. The package also includes a semiconductor die on the substrate in electrical communication with the contacts, and a die attach polymer attaching the die to the substrate. The die includes a recess, and the discrete component is contained in the recess encapsulated in the die attach polymer. A method for fabricating the package includes the steps of: attaching the discrete component to the substrate, placing the die attach polymer on the discrete component and the substrate, pressing the die into the die attach polymer to encapsulate the discrete component in the recess and attach the die to the substrate, and then placing the die in electrical communication with the discrete component. An electronic system includes the semiconductor package mounted to a system substrate.

Abstract: Flip chip packages formed at a wafer level on semiconductor wafers for electronic systems provide convenient prepackaging. The package, in one embodiment, includes an adhesive layer applied to an active side of the wafer. The adhesive layer has openings to permit access to the conductive pads on each die. A conductive material substantially fills the openings. A pre-packaged die diced from the semiconductor wafer is mounted to a support wherein the conductive material effects electrical interconnection between the conductive pads on the die and receiving conductors on the support. The pre-packaged die can be coupled to a processor for an electronic system. To provide greater mounting densities, two or more dice may be coupled with the adhesive layer providing a covering for the two or more dice. The prepackaged chip with two or more dice may be coupled to a processor reducing the volume needed in an electronic system.

Abstract: A MOSFET on SOI device includes an upper region having at least one first MOSFET type semi-conductor device formed on a first semi-conductor layer stacked on a first dielectric layer, a first conductive layer and a first portion of a second semi-conductor layer. A lower region includes at least one second MOSFET type semi-conductor device formed on a second portion of the second semi-conductor layer, a gate of the second semi-conductor device being formed by at least one conductive portion. The second semi-conductor layer is arranged on a second dielectric layer stacked on a second conductive layer.

Abstract: A mountable integrated circuit package system includes: forming a base integrated circuit package system includes: providing a first substrate, and forming a package encapsulation having a cavity over the first substrate with the first substrate partially exposed within the cavity; and mounting an interposer including a central aperture over the package encapsulation and the first substrate with the central aperture over the cavity.

Abstract: A semiconductor package and a method for manufacturing the same is provided for minimizing or preventing warpage and twisting of semiconductor chip bodies as a result of thinning them during grinding. The semiconductor package includes a semiconductor chip body and a substrate. The semiconductor chip body has a first surface, a second surface facing away from the first surface, through-electrodes which pass through the semiconductor chip body and project from the second surface, and a warpage prevention part which projects in the shape of a fence along an edge of the second surface. The substrate has a substrate body and connection pads which are formed on an upper surface of the substrate body, facing the second surface, and which are connected with the projecting through-electrodes.

Abstract: A three dimensional integrated circuit and method for making the same. The three dimensional integrated circuit has a first and a second active circuit layers with a first metal layer and a second metal layer, respectively. The metal layers are connected by metal inside a buried via. The fabrication method includes etching a via in the first active circuit layer to expose the first metal layer without penetrating the first metal layer, depositing metal inside the via, the metal inside the via being in contact with the first metal layer, and bonding the second active circuit layer to the first active circuit layer using a metal bond that connects the metal inside the via to the second metal layer of the second active circuit layer.

Abstract: A method of manufacturing an integrated circuit (IC) device is disclosed. A wafer including multiple dies is processed to form solder bumps at the bond pad locations. A conductive substrate is patterned for routing traces and connection pads and partially etched. Routers are formed to electrically route a connection pad to the interior of its corresponding routing terminals. The etched connection pads corresponds to the plurality of bond pad locations of the IC chip. The bumped IC chip is aligned and attached to the conductive substrate through the connection pads and solder bumps. The attached IC chip and the first side of the conductive substrate are then encapsulated. Un-processed conductive material is then removed from a second side of the substrate, opposite the first side, to expose the routers and routing terminals.

Abstract: A stackable layer and stacked multilayer module are disclosed. Individual integrated circuit die are tested and processed at the wafer level to create vertical area interconnect vias for the routing of electrical signals from the active surface of the die to the inactive surface. Vias are formed at predefined locations on each die on the wafer at the reticle level using a series of semiconductor processing steps. The wafer is passivated and the vias are filled with a conductive material. The bond pads on the die are exposed and a metallization reroute from the user-selected bond pads and vias is applied. The wafer is then segmented to form thin, stackable layers that can be stacked and vertically electrically interconnected using the conductive vias, forming high-density electronic modules which may, in turn, be further stacked and interconnected to form larger more complex stacks.

Abstract: A stacked semiconductor structure and fabrication method thereof are provided. The method includes mounting and connecting electrically a semiconductor chip to a first substrate, mounting on the first substrate a plurality of supporting members corresponding in position to a periphery of the semiconductor chip, mounting a second substrate having a first surface partially covered with a tape and a second surface opposite to the first surface on the supporting members via the second surface, connecting electrically the first and second substrates by bonding wires, forming on the first substrate an encapsulant for encapsulating the semiconductor chip, the supporting members, the second substrate, the bonding wires, and the tape with an exposed top surface, and removing the tape to expose the first surface of the second substrate and allow an electronic component to be mounted thereon. The present invention prevents reflow-induced contamination, spares a special mold, and eliminates flash.

Abstract: A manufacturing method for a layered chip package including a stack of a plurality of layer portions includes the steps of: fabricating a layered substructure by stacking a plurality of substructures each including a plurality of layer portions corresponding to the plurality of layer portions of the layered chip package; and fabricating a plurality of layered chip packages by using the layered substructure.

Abstract: Provided are a stack chip and a stack chip package having the stack chip. Internal circuits of two semiconductor chips are electrically connected to each other through an input/output buffer connected to an external connection terminal. The semiconductor chip has chip pads, input/output buffers and internal circuits connected through circuit wirings. The semiconductor chip also has connection pads connected to the circuit wirings connecting the input/output buffers to the internal circuits. The semiconductor chips include a first chip and a second chip. The connection pads of the first chip are electrically connected to the connection pads of the second chip through electrical connection means. Input signals input through the external connection terminals are input to the internal circuits of the first chip or the second chip via the chip pads and the input/output buffers of the first chip, and the connection pads of the first chip and the second chip.

Abstract: A stacked package structure utilizes flip-chip technology to stack an acoustic micro-sensor on an integrated circuit (IC) device having a recess as a back chamber and cover the acoustic micro-sensor using a glass substrate or a planar substrate with an aperture. With the use of the stacked package structure, the package volume of the acoustic micro-sensor can be reduced effectively.

Abstract: An insulating layer 12 is formed as a surface layer of electronic circuit chip 10. A conductor interconnect 14 is formed in the insulating layer 12. The conductor interconnect 14 is exposed in the surface of the insulating layer 12. A solder wetting metallic film 16 (a metallic film) is formed on a portion of the conductor interconnect 14 to be exposed in the surface of the insulating layer 12. Typical metallic material (second metallic material) available for composing the solder wetting metallic film 16 includes a material that requires higher free energy for forming an oxide thereof, as compared with a free energy required for forming an oxide of the metallic material composing the conductor interconnect 14.

Abstract: An integrated circuit package-in-package system is provided forming a first integrated circuit package having a first interface, stacking a second integrated circuit package having a second interface above the first integrated circuit package, fitting the first interface and the second interface, and attaching a third integrated circuit package on the second integrated circuit package.

Abstract: Packaged microelectronic devices and methods for manufacturing packaged microelectronic devices are disclosed herein. In one embodiment, a packaged microelectronic device can include a support member, a first die attached to the support member, and a second die attached to the first die in a stacked configuration. The device can also include an attachment feature between the first and second dies. The attachment feature can be composed of a dielectric adhesive material. The attachment feature includes (a) a single, unitary structure covering at least approximately all of the back side of the second die, and (b) a plurality of interconnect structures electrically coupled to internal active features of both the first die and the second die.

Abstract: An integrated circuit package system including a substrate with a top surface and a bottom surface. Configuring the top surface to include electrical contacts formed between a perimeter of the substrate and a semiconductor die. Aligning over the top surface of the substrate a mold plate with a honeycomb meshwork of posts or a stepped honeycomb meshwork of posts and depositing a material to prevent warpage of the substrate between the top surface of the substrate and the mold plate. Removing the mold plate to reveal discrete hollow conduits formed within the material that align with the electrical contacts.

Abstract: A method of manufacturing a semiconductor device and a semiconductor device including a first semiconductor element mounted on a first surface of a base plate, wherein solder balls are formed on a second opposite surface of the base plate—such that the second opposite surface includes an area without solder balls. At least one second semiconductor element is mounted to the base plate at the area of the second surface without solder balls. The at least one semiconductor element may be mounted to the base plate using low molecular adhesive, or in the alternative, high temperature solder.

Abstract: A semiconductor package includes a substrate having contacts, and a discrete component on the substrate in electrical communication with the contacts. The package also includes a semiconductor die on the substrate in electrical communication with the contacts, and a die attach polymer attaching the die to the substrate. The die includes a recess, and the discrete component is contained in the recess encapsulated in the die attach polymer. A method for fabricating the package includes the steps of: attaching the discrete component to the substrate, placing the die attach polymer on the discrete component and the substrate, pressing the die into the die attach polymer to encapsulate the discrete component in the recess and attach the die to the substrate, and then placing the die in electrical communication with the discrete component. An electronic system includes the semiconductor package mounted to a system substrate.

Abstract: Apparatuses, methods, and systems for improved integrated circuit packages are described. An integrated circuit (IC) package includes a substrate having opposing first and second surfaces, an IC die, a plurality of conductive elements, and an encapsulating material. The substrate has a plurality of contact pads on the first surface that are electrically coupled to a plurality of electrically conductive features on the second surface. The plurality of conductive elements is formed on the first surface of the substrate. The IC die is located on the first surface of the substrate. The encapsulating material encapsulates the IC die and a portion of each element of the plurality of conductive elements.

Abstract: The present invention provides a semiconductor device which comprises a lead frame including a die pad having one or two or more openings, a substrate mounted over the die pad so as to expose a plurality of semiconductor chip connecting second electrode pads from the openings of the die pad, a plurality of semiconductor chips mounted over the die pad and the substrate, bonding wires that connect chip electrode pads of the semiconductor chip and their corresponding semiconductor chip connecting first and second electrode pads of the substrate, and a sealing portion which covers these and is provided so as to expose parts of leads.

Abstract: A power semiconductor component (2) has a chip stack, which contains a first chip (10), a second chip (6) and a third chip (8), where at least the second chip (6) and the third chip (8) are the same height. The power semiconductor component (2) also has a package in which the first chip (10), the second chip (6) and the third chip (8) are placed. The second chip (6) and the third chip (8) are mounted side by side on a lead (4), and the first chip (10) rests both on the second chip (6) and on the third chip (8).

Abstract: An electrical component includes a substrate, a first integrated circuit attached to the substrate, a metal portion coupled to the first integrated circuit, and a second integrated circuit attached to the first integrated circuit. The metal portion is sandwiched between the first integrated circuit and the second integrated circuit.

Abstract: A stacked type semiconductor device includes semiconductor devices, interposers by which the semiconductor devices are stacked, the interposers having electrodes provided on sides thereof, and a connection substrate connecting the electrodes together. The electrodes provided on the sides of the interposers may be connected to the connection substrate by one of an electrically conductive adhesive or an anisotropically conductive film.

Abstract: A semiconductor device having package-on-package (POP) configuration, primarily comprises a plurality of vertically stacked semiconductor packages and a plurality of electrical connecting components such as solder paste to electrically connect the external terminals of the semiconductor packages such as external leads of leadframes. Each semiconductor package has an encapsulant to encapsulate at least a chip where the encapsulant is movable with respect to the electrical connecting components to absorb the stresses between the vertically stacked semiconductor packages. In one embodiment, a stress-releasing layer is interposed between the vertically stacked semiconductor packages.