Abstract: An object is to provide a technique that can make it easy to achieve favorable heat dissipation performance. An electrical junction box includes: a circuit substrate in which a via hole is formed; a blocking member that blocks the via hole; a heat-transfer member provided in a region of a main surface of the circuit substrate in which the via hole is formed; and a heat dissipation member that comes into contact with the heat-transfer member from the opposite side to the circuit substrate, wherein the blocking member is a solid member, and fills at least the main surface side of the via hole.

Abstract: An information handling system includes a PCB, a CPU, a power distribution hat, and a heat sink. The PCB includes a first power contact on a first surface of the PCB and a first ground contact on a second surface of the PCB. The CPU includes a substrate and is affixed and electrically coupled to the first surface of the PCB by a first surface of the substrate. A second surface of the substrate includes a second power contact and a second ground contact. The power distribution hat couples the first power contact with the second power contact. The heat sink couples the first ground contact with the second ground contact.

Abstract: The invention relates to a heat sink (1) having a main body (2) and a plurality of carbon-nanostructure-based fibres (CNB, 3), more particularly carbon nano tubes (CNT, 4) or graphene fibres, of which at least some are attached to the main body (2). According to the invention, the fibres (3, 4), by adhering to or supporting one another, form a volume structure (12), more particularly in the manner of cotton wool, felt or a spun yarn, or the fibres (3, 4) form loops (6) or a three-dimensional woven fabric.

Abstract: Embodiments and fabrication methods for a printed circuit board comprising two or more electrically conductive layers, including at least a first conductive layer opposing and adjacent to a second conductive layer. Also including one or more electrically non-conductive layers including at least a first non-conductive layer disposed between the first conductive layer and the second conductive layer. A first copper pad is included on the first conductive layer. A second copper pad is included on the second conductive layer. There is a conductive via extending through the first non-conductive layer and electrically connecting the first copper pad to the second copper pad and solder mask material on the first copper pad around the via.

Abstract: A flexible circuit board for a chip on film according to an embodiment includes: a substrate including a first surface and a second surface opposite to the first surface and including a chip mounting region; a circuit pattern layer disposed on the first surface; and a heat dissipation part disposed in the chip mounting region, wherein the substrate is formed with at least two or more holes that are formed in a region overlapping the heat dissipation part, and the heat dissipation part includes: a heat dissipation pattern layer disposed on the first surface; a connection layer disposed inside the hole; and a heat dissipation layer disposed on the second surface.

Abstract: A printed circuit board includes a reference plane embedded in a substrate and adjacent to the top surface of the substrate. The printed circuit board also includes a first signal net and a second signal net being in close proximity to each other and disposed within a specific region on the top surface of the substrate. An outermost insulating layer on the top surface of the substrate covers the substrate, the first signal net and the second signal net, and includes an opening to expose a portion of the second signal net. A conductive layer is disposed in the opening and on the outermost insulating layer corresponding to the specific region, such that the conductive layer overlaps with the first signal net. A fifth signal net is embedded in the substrate and between the reference plane and the outermost insulating layer.

Abstract: A heat spreader including a body having a first conduction value and a first electromagnetic interference shield value. The heat spreader further includes a conduction enhancement affixed to the body, the conduction enhancement having a second conduction value greater than the first conduction value and a second electromagnetic interference shield value less than the first electromagnetic interference shield value. At least a portion of the conduction enhancement is positioned relative to the body for increasing an effective electromagnetic interference shield value of the body associated with the at least a portion of the conduction enhancement.

Abstract: A semiconductor package component and a semiconductor package including the same. More particularly, the present disclosure relates to a semiconductor package component for an RF power transistor and a semiconductor package including the same. Further particularly, it relates to a semiconductor package component for an RF power transistor and a semiconductor package including the same, capable of adjusting impedance matching of an RF transistor by connecting a die chip and a lead frame with a wire so that a length of the wire is reduced as much as the protruding height of the base substrate.

Abstract: An electronic device includes a semiconductor substrate and a heat sink arranged on a surface of the semiconductor substrate. The heat sink includes a plurality of metal filaments that each includes a first end joined to the surface, a second end, and a body over the surface such that the body is surrounded by a coolant medium to dissipate heat. The heat sink is not part of an electrical network.

Abstract: A circuit board structure includes a substrate, a third dielectric layer, a fourth dielectric layer, a first external circuit layer, a second external circuit layer, a conductive through hole electrically connected to the first and second external circuit layers, a first annular retaining wall surrounding the conductive through hole, and a second annular retaining wall surrounding the conductive through hole. The first annular retaining wall is electrically connected to the first external circuit layer and a first inner circuit layer. The second annular retaining wall is electrically connected to the second external circuit layer and a second inner circuit layer. A first ground circuit, the first annular retaining wall, and the first inner circuit layer define a first ground path surrounding a first signal circuit. A second ground circuit, the second annular retaining wall, and the second inner circuit layer define a second ground path surrounding a second signal circuit.

Abstract: A cast part includes an outermost wall, at least one inner wall defining at least two internal passages and at least one cast cooling fin extending from an outer surface. The cooling fin includes a ratio of fin height to an average fin thickness that is greater than 2.0 and no more than 18.0. A method is also disclosed.

Abstract: A semiconductor assembly includes a semiconductor component having a redistribution substrate with a top side, an underside and a semiconductor chip on the top side. Contact connection pads for connection to contact pads of the chip are on the top side of the substrate. External contact pads on the underside are electrically connected to the contact connection pads by conductor tracks. The external contact pads are at a greater distance from one another in a first region than a second region of the underside. The semiconductor component is on a printed circuit board. Contact pads corresponding to the external contacts are on a top side of the printed circuit board and are at a greater distance from one another in a first region than a second region of the top side. Through holes are formed between the contact pads in the first region of the printed circuit board.

Abstract: A display apparatus includes a display substrate, first micro LED modules arranged on the display substrate, and at least one second micro LED module disposed between the first micro LED modules. Each of the first micro LED modules includes a first substrate and micro LEDs disposed on the first substrate. The second micro LED module includes a second substrate and micro LEDs disposed on the second substrate. The second substrate bridges two adjacent first substrates.

Abstract: A lead frame includes: a die pad having a mounting surface for a semiconductor element; a recess included on the mounting surface; and a lead disposed around the die pad. The recess includes: a bottom surface positioned at a depth less than a thickness of the die pad from an opening plane of the recess; a plurality of protrusions protruding from the bottom surface; and a concavity recessed from the bottom surface.

Abstract: Disclosed is a method for producing a thermally conductive thin film for protecting elements and the like integrated inside an electronic device such as a smartphone from heat. A method for using synthetic graphite powder to produce a thin film that has excellent thermal conductivity compared to existing natural graphite thin films or metal thin films and can be produced at lower cost than existing synthetic graphite thin films obtained from polyimide or the like may be provided.

Abstract: A package structure includes at least one first redistribution layer, at least one second redistribution layer, a chip pad, a solder ball pad, a chip, a solder ball, and a molding compound. The first redistribution layer includes a first dielectric layer and a first redistribution circuit that fills a first opening and a second opening of the first dielectric layer. The first dielectric layer is aligned with the first redistribution circuit. The second redistribution layer includes a second and a third dielectric layers and a second redistribution circuit. The third dielectric layer is aligned with the second redistribution circuit. The chip pad and the solder ball pad are electrically connected to the first and the second redistribution circuits respectively. The chip and the solder ball are disposed on the chip pad and the solder ball pad respectively. The molding compound at least covers the chip and the chip pad.

Abstract: A semiconductor package includes a substrate, a semiconductor die mounted on the substrate, and a heatsink over the semiconductor die. The heatsink includes a roof portion and at least one connecting portion extending between the roof portion and the substrate. The at least one connecting portion includes a connection lead mounted on a connection pad of the substrate. The connection pad includes a first portion and a second portion spaced apart from each other, which are configured to electrically couple to different voltage signals, respectively, for detecting heatsink floating.

Abstract: A system for providing signal temperature immunity to a printed circuit board (PCB) comprises moating a set of reference planes, forming a trench between a heat source and a stripline trace and positioning a perforated section of a plane on a reference plane opposite the heat source. Moating the reference planes increases thermal resistance, the trench removes dielectric material and replaces it with air and the perforated section causes heat to travel in a non-linear path. Vias positioned at the ends of the PCB route heat along the outer surfaces of the PCB to transfer heat to the ambient environment.

Abstract: An electronics cooling system includes a printed circuit board (PCB) assembly having a heat generating component connected to a base. A plurality of thermally conductive microtubes are connected to the PCB assembly with a first spatial density. The plurality of thermally conductive microtubes are connected to a heat plate of a cooling system with a second spatial density to evenly spread the heat flux of the PCB assembly over the heat plate.

Abstract: A mechanism is provided to remove heat from an integrated circuit (IC) device die by directing heat through a waveguide to a heat sink. The waveguide is mounted on top of a package containing the IC device die. The waveguide is thermally coupled to the IC device die. The waveguide transports the heat to a heat sink coupled to the waveguide and located adjacent to the package on top of a printed circuit board on which the package is mounted. Embodiments provide both thermal dissipation of the generated heat while at the same time maintaining good radio frequency performance of the waveguide.

Abstract: A magnetoresistance effect element according to an embodiment includes: a spin orbit torque wiring extending in a first direction; a laminated body laminated on the spin orbit torque wiring and having a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer; a conductive layer in contact with a side of the laminated body opposite to the spin orbit torque wiring; and a heat dissipation layer separated from the laminated body in the first direction and connected to the spin orbit torque wiring and the conductive layer.

Abstract: A semiconductor package includes a first integrated circuit structure, a first encapsulation material laterally encapsulating the first integrated circuit structure, a first redistribution structure, a solder layer, a second integrated circuit structure, a second encapsulation material second laterally encapsulating the second integrated circuit structure and a second redistribution structure. The first integrated circuit structure includes a first metallization layer. The first redistribution structure is disposed over the first integrated circuit structure and first encapsulation material. The first metallization layer faces away from the first redistribution structure and thermally coupled to the first redistribution structure. The solder layer is dispose over the first redistribution structure. The second integrated circuit structure is disposed on the first redistribution structure and includes a second metallization layer in contact with the solder layer.

Abstract: An electronic device is provided. The electronic device includes: a support structure, a heat-dissipation layer, a first adhesive and an electronic panel. The heat-dissipation layer is disposed on the support structure and includes at least one first hole. The first adhesive is disposed in the at least one first hole. The electronic panel is disposed on the heat-dissipation layer.

Abstract: Disclosed is a semiconductor package comprising a package substrate, a first semiconductor chip on the package substrate and including a first region and a second region, a second semiconductor chip on the first region, a heat radiation spacer on the second region, a third semiconductor chip supported by the second semiconductor chip and the heat radiation spacer, and a molding layer covering the first to third semiconductor chips and the heat radiation spacer.

Abstract: A method for generating a thermoset Fiber-Reinforced Polymer (FRP) composite preform includes: dispensing, from a print head of a 3D-printer, a dual-cure resin coated fiber including a dual-cure resin with a ultra-violet (UV)-curable component and a thermally-curable component; curing, during the dispensing of the dual-cure resin coated fiber, the UV-curable component with a UV light source such that the dual-cure resin coated fiber is partially cured and contacting lengths of the partially-cured dual-cure resin coated fiber bond together; and positioning the print head during the dispensing and curing of the dual-cure resin coated fiber to three-dimensionally print the thermoset FRP composite preform.

Abstract: A network sharing system includes an outdoor wireless transceiver device, an indoor network sharing device, and a high-speed Ethernet transmission cable. The outdoor wireless transceiver device includes a high-frequency network transceiver module and a first Ethernet port and the high-frequency network transceiver module is connected to the first Ethernet port and is configured to receive a high-frequency network signal. The indoor network sharing device includes a processing module and a second Ethernet port. The high-speed Ethernet transmission cable has a transmission rate above 1 giga bits per second (Gbps), two ends of the high-speed Ethernet transmission cable are respectively connected to a first RJ45 connector and a second RJ45 connector, the high-speed Ethernet transmission cable is provided with a flat cable segment, the first RJ45 connector is connected to the first Ethernet port, and the second RJ45 connector is connected to the second Ethernet port.

Abstract: A light emitting module according to an embodiment comprises: a first support member having a first opening part and a second opening part; a second support member disposed in the first opening part in the first support member; a third support member disposed in the second opening part in the first support member; a first lead electrode disposed above the second support member; a second lead electrode disposed on the first support member and/or above the second support member; a light emitting chip disposed above the second support member and electrically connected to the first and second lead electrodes; a control component disposed above the third support member; and a conductive layer disposed underneath the first, second and third support members, wherein the first support member comprises a resin material, the second support material comprises a ceramic material and the third support member comprises a metal material.

Abstract: A semiconductor device includes a base plate to which a stacked substrate is bonded, the stacked substrate being mounted on a semiconductor chip. The semiconductor device further includes a heat sink mounted to the base plate, via thermal paste and a metal ring. A center hole of the metal ring is provided to face the semiconductor chip and the thermal paste fills the center hole. Further, the metal ring is formed using a material having about a same hardness as the heat sink, or a material having a lower hardness than the hardness of the heat sink.

Abstract: A semiconductor device having enhanced thermal transfer includes at least one die, including a device layer in which one or more functional circuit elements are formed and a substrate supporting the device layer, and a support structure. The die is disposed on the support structure using at least one connection structure coupled between the device layer and the support structure. A back surface of the substrate is textured so as to increase a surface area of the back surface to thereby enhance thermal transfer between the substrate and an external environment.

Abstract: Disclosed are apparatus and associated methodology providing for fixed components that exhibit tailorable variations in frequency response depending on the applied frequencies over the components useful frequency range. The presently disclosed subject matter provides improved operational characteristics of generally known transmission line capacitor devices by providing a parallel resistive component constructed as a portion of the dielectric separating electrodes corresponding to a capacitor.

Abstract: In one embodiment, an integrated circuit with a signal-processing region is disclosed. The integrated circuit comprises a silicon-on-insulator die singulated from a silicon-on-insulator wafer. The silicon on insulator die comprises an active layer, an insulator layer, a substrate, and a strengthening layer. The substrate consists of an excavated substrate region, and a support region, the support region is in contact with the insulator layer. The excavated region covers a majority of the signal-processing region of the integrated circuit.

Abstract: Lower semiconductor dies in 2.5 D semiconductor packaging configurations can be cooled by thermally coupling the lower semiconductor dies to a heat sink positioned above the interposer, to an upper semiconductor die, to a heat sink affixed beneath a substrate, or to free-flowing air circulating above the interposer or beneath the substrate. The thermal coupling can be achieved using heat pipes, thermal vias, or other conductive passage ways.

Abstract: A device comprising a substrate, an integrated circuit (IC) die attached to the substrate on one side, a plurality of contact pads on an active side of the IC die, a plurality of thermally and electrically conductive legs, each of the legs attached to a respective one of the contact pads, and an encapsulating material formed around the substrate, the IC die, and a portion of the legs. A contact end of each of the legs is exposed, and one of the contact ends conducts a signal from a transistor in the IC die.

Abstract: A semiconductor apparatus according to embodiments of the invention can include a first semiconductor device made of silicon, the first semiconductor devices being arranged collectively, whereby to form a first device group, and a second semiconductor device made of silicon carbide, the second semiconductor devices being arranged collectively, whereby to form a second device group. The apparatus can also include a wiring conductor connecting the first semiconductor device and the second semiconductor device, a cooling fin base comprising a projection formed thereon, whereby to dissipate heat generated from the first and second semiconductor devices, and the projections arranged under the second device group being spaced apart from each other more widely than the projections arranged under the first device group.

Abstract: Embodiments discussed herein are directed to a power semiconductor packaging that removes heat from a semiconductor package through one or more cooling zones that are located in a laterally oriented position with respect to the semiconductor package. Additional embodiments are directed to circuit elements that are constructed from one or more modular power semiconductor packages.

Abstract: A technology with which the reliability of a package making up a semiconductor device can be enhanced is provided. A feature of the technical idea of the invention is that: a heat sink unit and an outer lead unit are separated from each other: and the outer lead unit is provided with chip placement portions and each of the chip placement portions and each heat sink are joined together. As a result, when a sealing body is formed at a resin sealing step, tying portions function as a stopper for preventing resin leakage and the formation of resin burr in a package product can be thereby prevented. In addition, camber does not occur in the heat sink unit and cracking in a sealing body caused by winding (camber) can be suppressed.

Abstract: A semiconductor package system is provided including: a semiconductor chip; a substrate having a substrate opening and a vertical build-up wing, the substrate having the semiconductor chip mounted thereon with the vertical build-up wing circumscribed by vertical planes of a perimeter of, and spaced apart from, the semiconductor chip; a first heat slug attached above the substrate at a first horizontal plane and to a first surface of the semiconductor chip, the semiconductor chip at least partially encapsulated by the first heat slug; and a second heat slug attached to the substrate at a second horizontal plane above the first horizontal plane and to a second surface of the semiconductor chip through the substrate opening.

Abstract: An interposer includes a substrate, a conductive structure configured to contact the back side of a semiconductor device and contact pads. The interposer may include first and second sets of contact pads carried by the substrate. The interposer may also include conductive traces carried by the substrate to electrically connect corresponding contact pads of the first and second sets. The receptacles, which may be formed in a surface of the substrate and expose contacts of the second set, may be configured to at least partially receive conductive structures that are secured to the contact pads of the second set. Thus, the interposer may be useful in providing semiconductor device assemblies and packages of reduced height or profile. Such assemblies and packages are also described, as are multi-chip modules including such assemblies or packages.

Abstract: Apparatus may be provided including a high power light emitting diode (LED) unit, at least one printed circuit board, and an interfacing portion of a heat sink structure. The high power LED unit includes at least one LED die, at least one first lead and at least one second lead, and a heat sink interface. The at least one printed circuit board includes a conductive pattern configured to connect both the at least one first lead and the at least one second lead to a current source. The interfacing portion of the heat sink structure is that portion through which a majority of heat of the heat sink interface is transmitted. The interfacing portion is directly in touching contact with a majority of a heat transfer area of the heat sink interface.

Abstract: A semiconductor chip is mounted on a heat sink disposed inside a through-hole of a wiring board, electrodes of the semiconductor chip and connecting terminals of the wiring board are connected by bonding wires, a sealing resin is formed to cover the semiconductor chip and the bonding wires, and solder balls are formed on the lower surface of the wiring board, thereby constituting the semiconductor device. The heat sink is thicker than the wiring board. The heat sink has a protruded portion protruding to outside from the side surface of the heat sink, the protruded portion is located on the upper surface of the wiring board outside the through-hole, and the lower surface of the protruded portion contacts to the upper surface of the wiring board. When the semiconductor device is manufactured, the heat sink is inserted from the upper surface side of the wiring board.

Abstract: An electronic module including a conductive-pattern layer; an insulating-material layer supporting the conductive-pattern layer; and at least one component inside the insulating-material layer is disclosed. The component includes a first surface and contact zones on the first surface. The electronic module further includes a first hardened adhesive layer on the first surface of the component; a second hardened adhesive layer in contact with the conductive-pattern layer and the first hardened adhesive layer; holes in the first and second hardened adhesive layer at the locations of the contact zones; and conductive material in the holes and in electrical connection with the contact zones of the component and the conductive-pattern layer.

Abstract: A high-speed I/O trace is part of an I/O package architecture for an integrated circuit package substrate. The integrated circuit package substrate includes an integrated heat spreader footprint on a die-side and the I/O trace to couple with an IC device to be disposed inside the IHS footprint. The I/O trace includes a pin-out terminal outside the IHS footprint to couple to an IC device to be disposed outside the IHS footprint. The high-speed I/O trace can sustain a data flow rate from a processor in a range from 5 gigabits per second (Gb/s) to 40 Gb/s.

Abstract: A plurality of FPGA dice is disposed upon a semiconductor substrate. In order to supply the immense power required by the plurality of FPGA dice, power is routed through the semiconductor substrate vertically from thick metal layers and large integral metal structures located on the other side of the semiconductor substrate. Because the semiconductor substrate has a different coefficient of thermal linear expansion than metal layers in contact with the substrate, delamination may occur when the structure is subject to changes in temperature. To prevent delamination of metal layers connected to the semiconductor substrate and in electrical contact with the integral metal structures, the integral metal structures are manufactured with an array of post portions. During changes in temperature, the post portions of the integral metal structures bend and slide relative to metal layers connected to the semiconductor substrate and prevent linear stresses that may otherwise cause delamination.

Abstract: Through heat discharge only by wiring connected to a conventional semiconductor chip, sufficient heat discharge performance may not be achieved in a recent semiconductor device. A semiconductor device according to an aspect of the present invention includes: a flexible substrate including a first main surface and a second main surface; a semiconductor chip; a first heat conductive layer formed on the first main surface of the flexible substrate and electrically connected to the semiconductor chip; and a second heat conductive layer formed on the second main surface of the flexible substrate and electrically insulated from the semiconductor chip.

Abstract: A method of forming a well-anchored carbon nanotube (CNT) array, as well as thermal interfaces that make use of CNT arrays to provide very high thermal contact conductance. A thermal interface is formed between two bodies by depositing a continuous array of carbon nanotubes on a first of the bodies so that, on mating the bodies, the continuous array is between surface portions of the first and second bodies. The thermal interface preferably includes a multilayer anchoring structure that promotes anchoring of the continuous array of carbon nanotubes to the first body. The anchoring structure includes a titanium bond layer contacting the surface portion of the first body, and an outermost layer with nickel or iron catalytic particles from which the continuous array of carbon nanotubes are nucleated and grown. Additional thermal interface materials (TIM's) can be used in combination with the continuous array of carbon nanotubes.

Abstract: An LED assembly can include a heat sink base, at least one LED die attached to the heat sink base, and a lens. One or more layers of phosphor can be formed upon the lens. A heat sink, such as a finned heat sink, can attach the heat sink base to the lens. Heat from the LED die can flow through the heat sink base to the heat sink, from which the heat can be dissipated. Similarly, heat from phosphors can flow through the lens to the heat sink, from which the heat can be dissipated. By removing heat from the LED die, more current can be used to drive the LED die, thus providing brighter light. By removing heat from the phosphors, desired colors can be more reliably provided.

Abstract: One aspect of the invention includes a copper substrate; a catalyst on top of the copper substrate surface; and a thermal interface material that comprises a layer containing carbon nanotubes that contacts the catalyst. The carbon nanotubes are oriented substantially perpendicular to the surface of the copper substrate. A Raman spectrum of the layer containing carbon nanotubes has a D peak at ˜1350 cm?1 with an intensity ID, a G peak at ˜1585 cm?1 with an intensity IG, and an intensity ratio ID/IG of less than 0.7 at a laser excitation wavelength of 514 nm. The thermal interface material has: a bulk thermal resistance, a contact resistance at an interface between the thermal interface material and the copper substrate, and a contact resistance at an interface between the thermal interface material and a solid-state device. A summation of these resistances has a value of 0.06 cm2K/W or less.

Abstract: An interposer and a semiconductor device including the interposer, which can prevent thermal warpage of an insulative substrate. The interposer is provided with a semiconductor chip in a semiconductor device and may be disposed between the semiconductor chip and a mount board. The interposer includes: a substrate of an insulative resin; an island on one surface of the substrate to be bonded to a rear surface of the chip; a thermal pad on the other surface opposite the one surface opposed to the island with the intervention of the substrate; and a thermal via extending through the substrate from the one surface to the other surface to thermally connect the island to the thermal pad.

Abstract: A method and structure are provided to enable wire bond connections over active and/or passive devices and/or low-k dielectrics, formed on an Integrated Circuit die. A semiconductor substrate having active and/or passive devices is provided, with interconnect metallization formed over the active and/or passive devices. A passivation layer formed over the interconnect metallization is provided, wherein openings are formed in the passivation layer to an upper metal layer of the interconnect metallization. Compliant metal bond pads are formed over the passivation layer, wherein the compliant metal bond pads are connected through the openings to the upper metal layer, and wherein the compliant metal bond pads are formed substantially over the active and/or passive devices. The compliant metal bond pads may be formed of a composite metal structure.

Abstract: The present invention is directed to an electrostatic discharge (ESD) device with an improved ESD robustness for protecting output buffers in I/O cell libraries. The ESD device according to the present invention uses a novel I/O cell layout structure for implementing a turn-on restrained method that reduces the turn-on speed of an ESD guarded MOS transistor by adding a pick-up diffusion region and/or varying channel lengths in the layout structure.