Abstract: An assembly comprises a stiffener, a circuit substrate and an IC chip. The stiffener has a surface with a first region and a second region. The circuit substrate covers at least a portion of the first region of the stiffener, while the IC chip overlies at least a portion of each of the first and second regions of the stiffener. The assembly further comprises a signal solder bump and a thermally conductive feature. The signal solder bump contacts the IC chip and the circuit substrate. The thermally conductive feature is disposed between, and is metallurgically bonded to, the integrated circuit chip and the second region of the stiffener. The thermally conductive feature provides an efficient thermal conductivity pathway between the IC chip and the stiffener.

Abstract: An integrated optical I/O and semiconductor chip with a direct liquid jet impingement cooling assembly are disclosed. Contrary to other solutions for packaging an optical I/O with a semiconductor die, this assembly makes use of a metal clad fiber, e.g. copper, which will actually enhance cooling performance rather than create a design restriction that has the potential to limit cooling capability.

Abstract: An interposer and a semiconductor device including the interposer, which can prevent thermal warpage of an insulative substrate. The interposer is provided with a semiconductor chip in a semiconductor device and may be disposed between the semiconductor chip and a mount board. The interposer includes: a substrate of an insulative resin; an island on one surface of the substrate to be bonded to a rear surface of the chip; a thermal pad on the other surface opposite the one surface opposed to the island with the intervention of the substrate; and a thermal via extending through the substrate from the one surface to the other surface to thermally connect the island to the thermal pad.

Abstract: A semiconductor chip is mounted on a heat sink disposed inside a through-hole of a wiring board, electrodes of the semiconductor chip and connecting terminals of the wiring board are connected by bonding wires, a sealing resin is formed to cover the semiconductor chip and the bonding wires, and solder balls are formed on the lower surface of the wiring board, thereby constituting the semiconductor device. The heat sink is thicker than the wiring board. The heat sink has a protruded portion protruding to outside from the side surface of the heat sink, the protruded portion is located on the upper surface of the wiring board outside the through-hole, and the lower surface of the protruded portion contacts to the upper surface of the wiring board. When the semiconductor device is manufactured, the heat sink is inserted from the upper surface side of the wiring board.

Abstract: A semiconductor module with two cooling surfaces and method. One embodiment includes a first carrier with a first cooling surface and a second carrier with a second cooling surface. The first cooling surface is arranged in a first plane, the second cooling surface is arranged in a second plane, at an angle different from 0° relative to the first plane.

Abstract: An interposer includes a substrate, a conductive structure configured to contact the back side of a semiconductor device and contact pads. The interposer may include first and second sets of contact pads carried by the substrate. The interposer may also include conductive traces carried by the substrate to electrically connect corresponding contact pads of the first and second sets. The receptacles, which may be formed in a surface of the substrate and expose contacts of the second set, may be configured to at least partially receive conductive structures that are secured to the contact pads of the second set. Thus, the interposer may be useful in providing semiconductor device assemblies and packages of reduced height or profile. Such assemblies and packages are also described, as are multi-chip modules including such assemblies or packages.

Abstract: A heat spreader is provided for use with a memory module. The memory module has at least a first side with a first plurality of integrated circuits thereon. The heat spreader includes a first segment mountable on the memory module to be in thermal communication with a plurality of integrated circuits on the first side, and to be substantially thermally isolated from at least one integrated circuit on the first side. The heat spreader further includes a second segment mountable on the memory module to be in thermal communication with the at least one integrated circuit on the first side that is substantially thermally isolated from the first segment.

Abstract: Provided is a device capable of oscillating a plurality of oscillation modes within a laser medium for obtaining a fundamental wave output which is easy in output scaling and high in luminance, thereby enabling a second harmonic conversion which is high in efficiency. The device includes: a laser medium (5) that is planar, has a waveguide structure in a thickness direction of a cross-section that is perpendicular to an optical axis (6), and has a cyclic lens effect in a direction perpendicular to the optical axis (6) and the thickness direction; a clad (4) that is bonded onto one surface of the laser medium (5); and heat sink (3) that is bonded onto one surface side of the laser medium (5) through the clad (4), and in the device, a laser oscillation includes a laser oscillation that oscillates in a waveguide mode of the laser medium (5), and a laser oscillation that oscillates in a plurality of resonator modes that are generated by a cyclic lens effect of the laser medium (5).

Abstract: A semiconductor device includes a substrate having a chip island, a chip attached to the chip island, and encapsulation material deposited on the chip and part of the chip island. The chip island includes a first main face to which the chip is attached opposite a second main face, with the second main face of the chip island defining at least one cavity.

Abstract: A microelectronic device is made of a semiconductor substrate, a heat generating component in a layer thereof, and a body within the remaining semiconductor substrate. The body is made of materials which have a high thermal inertia and/or thermal conductivity. When high thermal conductivity materials are used, the body acts to transfer the heat away from the substrate to a heat sink.

Abstract: A chip package for a computer system includes a substrate having a first region and a second region on a first surface, at least one die coupled to the first region on the first surface of the substrate and a main logic board coupled to the second region on the first surface of the substrate. By coupling the die and the main logic board on the first surface of the substrate, an overall thickness of the chip package is reduced.

Abstract: An integrated optical I/O and semiconductor chip with a direct liquid jet impingement cooling assembly are disclosed. Contrary to other solutions for packaging an optical I/O with a semiconductor die, this assembly makes use of a metal clad fiber, e.g. copper, which will actually enhance cooling performance rather than create a design restriction that has the potential to limit cooling capability.

Abstract: According to one aspect of the invention, a method of constructing an electronic assembly is provided. A layer of metal is formed on a backside of a semiconductor wafer having integrated formed thereon. Then, a porous layer is formed on the metal layer. A barrier layer of the porous layer at the bottom of the pores is thinned down. Then, a catalyst is deposited at the bottom of the pores. Carbon nanotubes are then grown in the pores. Another layer of metal is then formed over the porous layer and the carbon nanotubes. The semiconductor wafer is then separated into microelectronic dies. The dies are bonded to a semiconductor substrate, a heat spreader is placed on top of the die, and a semiconductor package resulting from such assembly is sealed. A thermal interface is formed on the top of the heat spreader. Then a heat sink is placed on top of the thermal interface.

Abstract: A cooling apparatus for a circuit module having a substrate extending axially with an IC chip of a first type and IC chips of a second type mounted thereon, comprising: a first heat spreading element disposed to form a heat conduction path with the IC chip of the first type; and a second heat spreading element disposed to form a heat conduction path with the IC chips of the second type, wherein there is at least one IC chip of the second type mounted axially away from opposite sides of the IC chip of the first type, wherein the first type of IC chip is capable of generating a larger amount of heat than the second type of IC chips, and the first heat spreading element has a higher thermal conductivity than the second heat spreading element.

Abstract: A high-speed I/O trace is part of an I/O package architecture for an integrated circuit package substrate. The integrated circuit package substrate includes an integrated heat spreader footprint on a die-side and the I/O trace to couple with an IC device to be disposed inside the IHS footprint. The I/O trace includes a pin-out terminal outside the IHS footprint to couple to an IC device to be disposed outside the IHS footprint. The high-speed I/O trace can sustain a data flow rate from a processor in a range from 5 gigabits per second (Gb/s) to 40 Gb/s.

Abstract: A driver module structure includes a flexible circuit board (2) provided with a wiring pattern (7), a semiconductor device mounted on the flexible circuit board (2), and an electrically conductive heat-radiating member (4) joined to the semiconductor device. The wiring pattern (7) includes a ground wiring pattern (8). The flexible circuit board (2) has a cavity (9) that exposes a portion of the ground wiring pattern (8). The exposed portion of the ground wiring pattern (8) and the heat-radiating member (4) are connected to establish electrical continuity via a member (11) that is fitted into the cavity (9).

Abstract: A thermal interface material (100) includes a macromolecular matrix (10) and a plurality of thermally conductive fibers (20) incorporated therein. The macromolecular matrix (10) has a first surface (11) and an opposite second surface (12). Each of the thermally conductive fibers (20) is substantially parallel to each other and extends between the first and second surfaces (11), (12). A method for manufacturing the thermal interface material includes the steps of: (a) providing a number of thermally conductive fibers; (b) aligning the thermally conductive fibers uniformly and directionally to form an array of the thermally conductive fibers; (c) immersing the array of thermally conductive fibers into a liquid macromolecular material; (d) solidifying the liquid macromolecular material to obtain a macromolecular matrix having the two opposite surfaces with the thermally conductive fibers embedded therein, that is, a desired interface material is obtained.

Abstract: This publication discloses an electronic module and a method for manufacturing an electronic module, in which a component (6) is glued (5) to the surface of a conductive layer, from which conductive layer conductive patterns (14) are later formed. After gluing the component (6), an insulating-material layer (1), which surrounds the component (6) attached to the conductive layer, is formed on, or attached to the surface of the conductive layer. After the gluing of the component (6), feed-throughs are also made, through which electrical contacts can be made between the conductive layer and the contact zones (7) of the component. After this, conductive patterns (14) are made from the conductive layer, to the surface of which the component (6) is glued.

Abstract: A low thermal pathway is provided from the top surface of a silicon substrate to the bottom surface of the silicon substrate by first forming aluminum plugs in the bottom surface of the silicon substrate that contact the silicon substrate and extend up towards the top surface, and then heating the aluminum plugs to a temperature for a period of time sufficient to cause spikes to grow from the sides of the aluminum plugs.

Abstract: A power module includes a power semiconductor, a non-power semiconductor, one resin substrate, and a cooling device. The power semiconductor and the non-power semiconductor configure a power supply circuit for performing power conversion. Both the power semiconductor and the non-power semiconductor are mounted on the resin substrate. The cooling device is disposed in order to cool the power semiconductor.

Abstract: Disclosed in this specification is a wireless semiconductor package with multiple dies, at least two of which are attached to a thermally and electrically conductive heat sink. The package provides an efficient means for dissipating heat.

Abstract: A driver module structure includes a flexible circuit board (2) provided with a wiring pattern (7), a semiconductor device mounted on the flexible circuit board (2), and an electrically conductive heat-radiating member (4) joined to the semiconductor device. The wiring pattern (7) includes a ground wiring pattern (8). The flexible circuit board (2) has a cavity (9) that exposes a portion of the ground wiring pattern (8). The exposed portion of the ground wiring pattern (8) and the heat-radiating member (4) are connected to establish electrical continuity via a member (11) that is fitted into the cavity (9).

Abstract: A semiconductor device 300 includes a metal line 304 formed in a first dielectric layer 302. A capping layer 306 is formed the metal line 304. A second dielectric layer 308 is formed over the first dielectric layer 302 and the metal line 304. A first via 310 is formed in the second dielectric layer 308 and in contact with the metal line 304. A second via 312 is formed in the second dielectric layer 308 and in contact with the metal line 304, and is positioned a distance away from the first via 310. An electrically isolated via 326 is formed in the second dielectric layer 308 and in contact with the metal line 304 and in between the first via 310 and the second via 312. A third dielectric layer 314 is formed over the second dielectric layer 308. First and second trenches 316, 318 are formed in the third dielectric layer 314 and in contact with the first via 310 and the second via 312, respectively. An isolated trench 328 is formed in the third dielectric layer and in contact with the isolated via 326.

Abstract: A semiconductor package including stacked packages is disclosed. The semiconductor die package includes a first heat sink structure, a first semiconductor die attached to the first heat sink structure and having a first exterior surface, an intermediate conductive element attached to the first semiconductor die, a second semiconductor die attached to the second heat sink structure, and a second heat sink structure attached to the second semiconductor die and comprising a second exterior surface. A molding material is disposed around the first and second semiconductor dice, where the molding material exposes the first exterior surface of the first heat sink structure and exposes the second exterior surface of the second heat sink structure.

Abstract: A power semiconductor module according to the present invention includes: a planar base plate having a plurality of insulated substrates soldered on the top surface, the insulated substrates each having power semiconductor elements to be cooled mounted thereon; a plurality of radiation fins projecting from the bottom surface side of the base plate; and a peripheral wall projecting from the bottom surface side of the base plate so as to surround the radiation fins, the projecting length of the radiation fins is less than or equal to that of the peripheral wall, and the peripheral wall has end surfaces present in the same plane.

Abstract: A stacked die package includes a substrate (210, 310), a first die (220, 320) above the substrate, a spacer (230, 330) above the first die, a second die (240, 340) above the spacer, and a mold compound (250, 370) disposed around at least a portion of the first die, the spacer, and the second die. The spacer includes a heat transfer conduit (231, 331, 333, 351, 353) representing a path of lower overall thermal resistance than that offered by the mold compound itself. The heat transfer path created by the heat transfer conduit may result in better thermal performance, higher power dissipation rates, and/or lower operating temperatures for the stacked die package.

Abstract: A power semiconductor module with its thermal resistance and overall size reduced. Insulating substrates with electrode metal layers disposed thereon are joined to both the surfaces of a power semiconductor chip by using, for example, soldering. Metal layers are disposed also on the reverse surfaces of the insulating substrates and the metal layers are joined to the heat spreaders by using brazing. Heat radiating fins are provided on the heat radiating surface of at least one of the heat spreaders. The heat radiating side of each of the heat spreaders is covered by a casing to form a refrigerant chamber through which refrigerant flows to remove heat transmitted from the semiconductor chip to the heat spreader.

Abstract: A semiconductor apparatus is provided that includes a radiator for efficiently radiating heat generated in a wiring layer used in a surge current path of an electrostatic discharge protection circuit, and also for protecting the wiring layer itself used as the surge current path. The semiconductor apparatus includes an input protection circuit coupled to a wiring provided between an external terminal and an internal circuit, the input protection circuit includes a protection element for protecting the internal circuit from an excessive electrostatic surge input supplied to the external terminal. The semiconductor apparatus further includes a first metal wiring layer coupled to the input protection circuit and included in a current path for the surge electrostatic surge input, and a radiator including a sufficient thermal conductivity material coupled to the first metal wiring layer.

Abstract: Methods for forming vias are disclosed. The methods include providing a substrate having a first surface and an opposing, second surface. A first opening, a second opening, and a third opening are formed in a substrate such that the first opening, the second opening, and the third opening are in communication with each other. A portion of the first opening, the second opening, and the third opening are filled with a conductive material. Semiconductor devices, including the vias of the present invention, are also disclosed. Semiconductor components and assemblies resulting therefrom, and an electronic system, including the vias of the present invention, are further disclosed.

Abstract: A package structure for a semiconductor device comprises a substrate having a main surface and a back surface, a semiconductor chip formed on the main surface of the substrate, a package covering the semiconductor chip, radiation protrude electrodes and connection protrude electrodes. The radiation protrude electrodes are formed on the back surface of the substrate in a chip area where said semiconductor chip is located. Each of the radiation protrude electrodes are formed with a first pitch so that the radiation protrude electrodes make one body joining layer when the package structure is subjected to a heat treatment. The connection protrude electrodes are formed on the back surface of the substrate in a peripheral area of the chip area. Each of the connection protrude electrodes formed with a second pitch which is larger than the first pitch so that the connection protrude electrodes stay individual when the package structure is subjected to a heat treatment.

Abstract: The present invention relates to a three-dimensional semiconductor module having at least one unit semiconductor device connected to the outer-facing side surfaces of a multi-side ground block. The unit semiconductor device has a structure in which a semiconductor package (or semiconductor chip) is mounted on a unit wiring substrate. Ground pads to be connected to the outer-facing side surfaces of the ground block are formed on the first surface of the unit wiring substrate, the semiconductor chip is mounted on the second surface opposite to the first surface, and contact terminals electrically connected to the semiconductor chip are formed on the second surface.

Abstract: A direct connection multi-chip semiconductor element structure is proposed. A plurality of semiconductor chips are mounted and supported on a metal heat sink, such that heat generated by the chips during operation can be dissipated via the heat sink. A circuit structure is extended from the chips to provide direct electrical extension for the chips and improve the electrical performances. And exposed electrical connection terminals can be formed in the circuit structure extended from the chips to be directly electrically connected to an external electronic device.

Abstract: Provided is a flexible heat sink article comprising a base comprising a polymer and a plurality of polymeric protrusions extending away from the base, each protrusion having a major dimension and a minor dimension. The base comprises thermally conductive particles, and the protrusions comprise non-spherical thermally conductive particles substantially aligned in the direction of the major dimension within the protrusions. A thermal interface material may be provided contiguous with the base. Also provided is a flexible heat sink article comprising a base comprising a polymer and having a first surface and a second surface, a plurality of polymeric protrusions extending away from the first surface of the base, each protrusion having a major and a minor dimension, and a metallic layer contiguous with the second surface of the base, wherein the base and the protrusions comprise thermally conductive particles. Also provided is a method of making a flexible heat sink.

Abstract: A semiconductor module includes a parts-mounting or packaging substrate, a plurality of power metal insulator semiconductor (MIS) chips which have top surfaces and back surfaces and are mounted by flip chip bonding on or above the package substrate while letting the top surfaces face the package substrate, a drive-use integrated circuit (IC) chip which is mounted by flip chip bonding above the package substrate for driving the gates of metal insulator semiconductor field effect transistors (MISFETs) that are formed on the power MIS chips a plurality of heat sinks disposed on or above the back surfaces of the power MIS chips, and a resin member for sealing the power MIS chips and the driver IC chip together in a single package.

Abstract: A package of a leadframe with heatsinks, including a leadframe, a die, a first heatsink and a second heatsink. The leadframe has a die pad and a plurality of leads, and the leads are disposed around the die pad. The die is disposed on the die pad. The first heatsink is disposed on a first side of the leadframe and has a plurality of first positioning portions. The second heatsink is disposed on a second side of the leadframe. The second heatsink has a plurality of second positioning portions. The second positioning portions correspond to the first positioning portions of the first heatsink, whereby the warping problem of the leadframe is resolved.

Abstract: A microelectronic device is made of a semiconductor substrate, a heat generating component in a layer thereof, and a body within the remaining semiconductor substrate. The body is made of materials which have a high thermal inertia and/or thermal conductivity. When high thermal conductivity materials are used, the body acts to transfer the heat away from the substrate to a heat sink.

Abstract: A cavity-down ball grid includes a flexible circuit tape including a flexible tape laminated to a conductor layer. The flexible circuit tape has an aperture therein. A thermally conductive heat spreader is fixed to a first surface of the flexible circuit tape and the heat spreader has a cavity aligned with the aperture of the flexible circuit tape. A semiconductor die is mounted to the heat spreader in a die-down configuration in the cavity. A thermally conductive die adapter is fixed to the semiconductor die such that a portion of the die adapter protrudes from the cavity. A plurality of wire bonds connect the semiconductor die to bond sites on the second surface of the flexible circuit tape. An encapsulating material encapsulates the semiconductor die and the wire bonds and a plurality of solder balls are disposed on a second surface of the flexible circuit tape, in the form of a ball grid array.

Abstract: A semiconductor package including a bidirectional compound semiconductor component and two power semiconductor devices connected in a cascode configuration.

Abstract: A system and method for providing an active array of temperature sensing and cooling elements, including an active heatsink which further includes an active temperature sensing layer, a thermoelectric cooling layer, and a heatsink, which further includes a plurality of cooling channels. The temperature sensing element within the active temperature sensing layer includes a plurality of switching transistors, a linear transistor, a current sense resistor, a thermistor, a voltage sensing bus, a voltage setting bus, a current measurement bus, a measurement switching bus, a sense control bus, a storage capacitor, and a supply voltage, all under the control of a process control computer. The method of using an active array of temperature sensing and cooling elements includes the steps of aligning the shadow mask, depositing the material, detecting a thermal gradient, and controlling the thermoelectric cooling.

Abstract: A semiconductor device comprises a semiconductor chip which has a first surface, a pad which is formed directly on the first surface, an oxide film which is formed on the first surface, an insulating film which is formed on the oxide film and a part of the pad, a conductive film which is formed on the insulating film and the pad, a sealing material which covers a part of the conductive film and the insulating film and a bump which is formed over the conductive film, wherein the bump is exposed from a surface of the sealing material.

Abstract: The present invention is directed toward systems, packages, and methods for providing improved thermal performance in such packages and systems. Embodiments of the invention include a semiconductor integrated circuit (IC) package having a substrate with a heat spreader mounted on the substrate. An IC die is mounted to the heat spreader such that the heat spreader lies in between the die and the substrate. The invention is also directed to a heat spreader plate useable in a semiconductor package. The heat spreader plate comprises a plate comprised of thermally conductive material suitable for attachment to a packaging substrate wherein the plate includes openings for exposing electrical bonding surfaces of a packaging substrate when the heater spreader plate is mounted on the packaging substrate. Such openings enable wirebonding between the exposed electrical bonding surfaces of the substrate and an integrated circuit die to complete construction of a package including the heatspreader.

Abstract: A substrate is provided that may include an area designated for mounting of an integrated circuit and one or more areas for retaining a thermal interface material proximate the integrated circuit mounting area. A thermal interface material containment area(s) may be formed by creating a through-hole in the substrate, or a recess in the substrate that opens either to the die placement side or the opposite side of the substrate.

Abstract: Disclosed are a wafer level stacked package and its manufacturing method. As one example, in such a wafer level stacked package, a first semiconductor die is electrically connected to an upper surface of a substrate and a second semiconductor die is electrically connected to a lower surface of the substrate. That is, with respect to one substrate, semiconductor dies can be stacked on upper and lower surfaces of the substrate. Also, underfill is formed between the respective semiconductor dies and the substrate, thereby enhancing bonding forces between the respective semiconductor dies and the substrate. In addition to stacking the semiconductor dies, packages can be stacked with each other. That is, it is possible to stack a plurality of completed wafer level packages with each other in an up-and-down direction.

Abstract: Heat sink structures employing carbon nanotube or nanowire arrays to reduce the thermal interface resistance between an integrated circuit chip and the heat sink are disclosed. Carbon nanotube arrays are combined with a thermally conductive metal filler disposed between the nanotubes. This structure produces a thermal interface with high axial and lateral thermal conductivities.

Abstract: An optoelectronic assembly for an electronic system includes a transparent substrate having a first surface and an opposite second surface, the transparent substrate being thermally conductive and being metallized on the surface. A support electronic chip set is configured for at least one of providing multiplexing, demultiplexing, coding, decoding and optoelectronic transducer driving and receive functions and is bonded to the second surface of the transparent substrate. A first substrate having a first surface and an opposite second surface, is in communication with the transparent substrate via the metallized second surface and support chip set therebetween. A second substrate is in communication with the second surface of the first substrate and is configured for mounting at least one of data processing, data switching and data storage chips.