Abstract: First to sixth switching elements forming a power conversion circuit for one phase in a three-level power converting apparatus include transistor elements and diode elements connected in reverse parallel to the transistor elements. Second, third, fifth, and sixth transistor elements are configured by MOSFETs that enable an electric current to flow in two directions.

Abstract: A semiconductor package may include a substrate, a semiconductor chip disposed on the substrate, a communication terminal and a static electricity inducing terminal connected to a ground. The package may include a first sealant that comprises a voltage sensitive material and that covers the semiconductor chip and a static electricity blocking layer that provides a conductive pathway from the first sealant to only the static electric inducing terminal. The static electricity blocking layer may prevent the communication terminal from being electrically connected to the first sealant. If a buildup of charge is applied to the device, the first sealant may become polarized and/or conductive. The extra voltage may travel through the first sealant to the static electricity inducing terminal via an opening in the static electricity blocking layer. The semiconductor chip and the communication terminal may not be affected by the extra charge.

Abstract: The invention provides an electronic device package structure and method of fabrication thereof. The electronic device package structure includes a chip having an active surface and a bottom surface. A dielectric layer is disposed on the active surface of the chip. At least one trench is formed through the dielectric layer. A first protection layer covers the dielectric layer and sidewalls of the trench. A second protection layer covers the first protection layer, filling the trench.

Abstract: A printed circuit board (PCB) for molded underfill (MUF) and a PCB molding structure that may expand a range of applying the PCB and may resolve a problem of generation of a void during manufacturing of a semiconductor package. The PCB includes: a molding area on which a plurality of semiconductor chips are mounted and that is sealed; and a peripheral area that is formed around the molding area, contacts a mold for molding during a molding process, and includes a first side adjacent to a portion into which a molding material is injected and a second side that faces the first side that is adjacent to a portion from which air may be discharged, wherein an active area where the semiconductor chips are disposed in the molding area is disposed nearer the first side than to the second side.

Abstract: An integrated circuit package system includes: a semiconductor chip; a stress-relieving layer on the semiconductor chip; an adhesion layer on the stress relieving layer; and electrical interconnects bonded to the adhesion layer.

Abstract: A method of producing a resin-sealed package is provided with: providing an electronic component which has a plurality of terminals on one face, a first support member and a second support member; temporarily fixing said electronic component to a surface of said first support member by a first adhesive agent layer, to face said terminals with said first support member; fixing said second support member having a second adhesive agent layer to said electronic component while interposing said electronic component between said first support member and said second support member to face said second adhesive agent layer with a back face side of said electronic component; resin sealing said electronic component between said first support member and said second support member; peeling said first support member and said first adhesive agent layer from said electronic component and a sealing resin; and stacking an insulating resin layer and a wiring layer which is electrically connected to said terminals of said electr

Abstract: An electronic device includes a support substrate 12, an electric circuit 14 provided in a sealing region set on the support substrate 12, a sealing member 16 provided on the support substrate 12 to surround the sealing region, a sealing substrate 17 bonded to the support substrate 12 with the sealing member 16 interposed therebetween, and a spacer 23 arranged between the support substrate 12 and the sealing substrate 17. The electric circuit 14 includes an electronic element 24 having an organic layer. The sealing member 16 and the spacer 23 are formed using the same material.

Abstract: A Fo-WLCSP has a first polymer layer formed around a semiconductor die. First conductive vias are formed through the first polymer layer around a perimeter of the semiconductor die. A first interconnect structure is formed over a first surface of the first polymer layer and electrically connected to the first conductive vias. The first interconnect structure has a second polymer layer and a plurality of second vias formed through the second polymer layer. A second interconnect structure is formed over a second surface of the first polymer layer and electrically connected to the first conductive vias. The second interconnect structure has a third polymer layer and a plurality of third vias formed through the third polymer layer. A semiconductor package can be mounted to the WLCSP in a PoP arrangement. The semiconductor package is electrically connected to the WLCSP through the first interconnect structure or second interconnect structure.

Abstract: The invention provides a composition for sealing a semiconductor, the composition being able to form a thin resin layer, suppress the diffusion of a metal component to a porous interlayer dielectric layer, and exhibit superior adherence with respect to an interconnection material. The composition for sealing a semiconductor contains a resin having two or more cationic functional groups and a weight-average molecular weight of from 2,000 to 100,000; contains sodium and potassium each in an amount based on element content of not more than 10 ppb by weight; and has a volume average particle diameter, measured by a dynamic light scattering method, of not more than 10 nm.

Abstract: In one embodiment of the present invention, an IC chip mounting package is arranged such that an IC chip and a film base member are connected via an interposer, and a section in which the IC chip, the film base member, and the interposer are connected is sealed with sealing resin. The sealing resin is provided by potting sealing resin around the interposer via a potting nozzle, or is provided by potting the sealing resin around the IC chip, that is, via a device hole. Moreover, the sealing resin has a coefficient of linear expansion of not more than 80 ppm/° C., a viscosity of not less than 0.05 Pa·s but not more than 0.25 Pa·s, and also includes filler having a particle size of not more than 1 ?m.

Abstract: A power semiconductor module comprising a housing of a first plastic, at least one substrate carrier with a circuit constructed thereon and electric terminating elements extending therefrom. The housing includes attachment means for its permanent connection with the substrate carrier. The housing has a permanently elastic sealing device of a second plastic which is formed integrally with the housing and encircles and is directed towards a first inner main surface of the substrate carrier. A method for constructing such a module includes the steps of constructing a housing of a first mechanically stable plastic and a sealing device of a second permanently elastic plastic; disposing the at least one substrate carrier on the housing; and permanently connecting the housing to the substrate carrier.

Abstract: The invention provides an electronic device package structure and method of fabrication thereof. The electronic device package structure includes a chip having an active surface and a bottom surface. A dielectric layer is disposed on the active surface of the chip. At least one trench is formed through the dielectric layer. A first protection layer covers the dielectric layer and sidewalls of the trench. A second protection layer covers the first protection layer, filling the trench.

Abstract: This invention relates to thermosetting resin compositions useful for flip chip (“FC”) underfill sealant materials, where a semiconductor chip is mounted directly onto a circuit through solder electrical interconnections. Similarly, the compositions are useful for mounting onto a circuit board semiconductor devices, such as chip size or chip scale packages (“CSPs”), ball grid arrays (“BGAs”), land grid arrays (“LGAs”) and the like, each of which having a semiconductor chip, such as large scale integration (“LSI”), on a carrier substrate.

Abstract: A power module having at least one electric power component, such as a power electronic semiconductor component. An electrical contact for a load current is formed on a lower surface and also on an upper surface of the power semiconductor component. To reduce an explosion pressure and accept power when the power electronic semiconductor component is overloaded, a hollow space filled with at least one electrically conducting particle is formed on an electrical contact surface of the electrical contact. In case of a short circuit, an arc is initially generated above the semiconductor element thickness of the power semiconductor component, whereupon the filling in the hollow space takes over current conduction. Preferably, the filling in the hollow space is a plurality of spherical electrically conducting particles. The explosion pressure can escape into interstices in the filling if there is a short circuit. Furthermore, metal vapors are cooled and are condensed.

Abstract: An apparatus on a wafer, comprising; a first metal layer of a wall, a second metal layer of the wall, a third metal layer of the wall comprising; one or more base frames, a fourth metal layer of the wall comprising; one or more vertical frame pairs each on top of the one or more base frames and having a pass-thru therein, a fifth metal layer of the wall comprising; one or more top frames each over the pass-thru; and a metal lid.

Abstract: A light emitting device having a structure in which oxygen and moisture are prevented from reaching light emitting elements, and a method of manufacturing the same, are provided. Further, the light emitting elements are sealed by using a small number of process steps, without enclosing a drying agent. The present invention has a top surface emission structure. A substrate on which the light emitting elements are formed is bonded to a transparent sealing substrate. The structure is one in which a transparent second sealing material covers the entire surface of a pixel region when bonding the two substrates, and a first sealing material (having a higher viscosity than the second sealing material), which contains a gap material (filler, fine particles, or the like) for protecting a gap between the two substrates, surrounds the pixel region. The two substrates are sealed by the first sealing material and the second sealing material.

Abstract: The present disclosure suggests various microelectronic component assembly designs and methods for manufacturing microelectronic component assemblies. In one particular implementation, a microelectronic component assembly includes a microelectronic component, a substrate, and at least one bond wire. The substrate has a reduced-thickness base adjacent terminals of the microelectronic component and a body having a contact surface spaced farther from the microelectronic component than a bond pad surface of the base. The bond wire couples the microelectronic component to a bond pad carried by the bond pad surface and has a maximum height outwardly from the microelectronic component that is no greater than the height of the contact surface from the microelectronic component.

Abstract: In this manufacturing method of a semiconductor device, after a sealing film is applied over an entire surface of a semiconductor wafer and hardened, a second groove for forming a side-section protective film is formed in the sealing film and on the top surface side of the semiconductor wafer. In other words, the sealing film is formed in a state where a groove that causes strength reduction has not been formed on the top surface side of the semiconductor wafer. Since the second groove is formed on the top surface side of the semiconductor wafer after the sealing film is formed, the semiconductor wafer is less likely to warp when the sealing film, made of liquid resin, is hardened.

Abstract: A semiconductor package including a substrate with a semiconductor device mounted on the substrate and a resin member sealing the substrate and semiconductor device. The resin member includes a first surface and a second surface located on the other side of the first surface and a plurality of leads electrically connected with the semiconductor device. The leads project from the resin member and extend to the second surface side; wherein the second surface of the resin member includes a first area having a first concave portion and a second area having a second concave portion which is different from the first area, and the second concave portion is deeper than the first concave portion.

Abstract: In one embodiment of the present invention, an IC chip mounting package is arranged such that an IC chip and a film base member are connected via an interposer, and a section in which the IC chip, the film base member, and the interposer are connected is sealed with sealing resin. The sealing resin is provided by potting sealing resin around the interposer via a potting nozzle, or is provided by potting the sealing resin around the IC chip, that is, via a device hole. Moreover, the sealing resin has a coefficient of linear expansion of not more than 80 ppm/° C., a viscosity of not less than 0.05 Pa·s but not more than 0.25 Pa·s, and also includes filler having a particle size of not more than 1 ?m.

Abstract: The invention offers technology for suppressing damage to semiconductor devices due to temperature changes. When flip-chip mounting a silicon chip on a buildup type multilayer substrate having a structure with a thinned core, a core having a small coefficient of thermal expansion is used in the multilayer substrate, and the coefficient of thermal expansion and glass transition point of the underfill are appropriately designed in accordance with the thickness and coefficient of thermal expansion of the core. By doing so, it is possible to relieve stresses inside the semiconductor package caused by deformation of the multilayer substrate due to temperature changes, and thereby to suppress damage to the semiconductor package due to temperature changes.

Abstract: A new method and package is provided for the mounting of semiconductor devices that have been provided with small-pitch Input/Output interconnect bumps. Fine pitch solder bumps, consisting of pillar metal and a solder bump, are applied directly to the I/O pads of the semiconductor device, the device is then flip-chip bonded to a substrate. Dummy bumps may be provided for cases where the I/O pads of the device are arranged such that additional mechanical support for the device is required.

Abstract: A process for manufacturing a semiconductor device that inhibits deterioration in the quality of the semiconductor device and a semiconductor device manufactured on such manufacturing process are presented. An operation of determining time-variation of water content in the resin substrate 11 (processing S1); an operation of coupling the semiconductor element 12 onto the resin substrate 11 through a plurality of electroconductive bumps B (processing S3); a first heating operation for controlling a water content of the resin substrate 11 to equal to or lower than 0.02% by heating said resin substrate and said semiconductor element while maintaining the coupling through said bumps (processing S6); and a first heating operation for controlling a water content of the resin substrate 11 to equal to or lower than 0.

Abstract: A semiconductor device that includes an insulating substrate having an upper conductor formed on an upper surface thereof and a lower conductor formed on a lower surface of the insulating substrate. The device also includes a semiconductor element mounted on the upper surface of the insulating substrate with an under-element solder therebetween. The device further includes a heat sink whereon the insulating substrate is mounted with an under-substrate solder therebetween. The device additionally includes a silicone gel covering the semiconductor element, the under-element solder, and the upper conductor. In addition, the device includes a filler covering the lower conductor and the under-substrate solder, without covering the semiconductor element, the under-element solder, and the upper conductor, and having a thermal conductivity larger than a thermal conductivity of air and a fluidity higher than a fluidity of the silicone gel.

Abstract: A power semiconductor module comprising a housing of a first plastic, at least one substrate carrier with a circuit constructed thereon and electric terminating elements extending therefrom. The housing includes attachment means for its permanent connection with the substrate carrier. The housing has a permanently elastic sealing device of a second plastic which is formed integrally with the housing and encircles and is directed towards a first inner main surface of the substrate carrier. A method for constructing such a module includes the steps of constructing a housing of a first mechanically stable plastic and a sealing device of a second permanently elastic plastic; disposing the at least one substrate carrier on the housing; and permanently connecting the housing to the substrate carrier.

Abstract: In a wide gap semiconductor device of SiC or the like used at a temperature of 150 degrees centigrade or higher, the insulation characteristic of a wide gap semiconductor element is improved and a high-voltage resistance is achieved. For these purposes, a synthetic high-molecular compound, with which the outer surface of the wide gap semiconductor element is coated, is formed in a three-dimensional steric structure which is formed by linking together organosilicon polymers C with covalent bonds resulting from addition reaction. The organosilicon polymers C have been formed by linking at least one organosilicon polymers A having a crosslinked structure using siloxane (Si—O—Si combination) with at least one organosilicon polymers B having a linear linked structure using siloxane through siloxane bonds.

Abstract: A system for underfilling in a chip package includes an underfill mixture that ameliorates the CTE mismatch that typically exists between a packaged die and a resin-impregnated fiberglass mounting substrate. In one embodiment, the system includes an underfill mixture that comprises a principal underfill composition of a rigid octaaminophenyl silsesquioxane (OAPS) that is used as a curing agent for a tetrafunctional, low viscosity, and relatively rigid TGMX epoxy resin. An embodiment is also directed to the assembly of a flip chip package that uses the underfill mixture.

Abstract: A chip package structure comprises a carrier, a chip and an underfill. The chip has an active surface on which a plurality of bumps are formed. The chip is flip-chip bonded onto the carrier with the active surface facing the carrier, and is electrically connected to the carrier through the bumps. The underfill is filled between the chip and the carrier. A portion of the underfill near the chip serves as a first underfill portion. The portion of the underfill near the carrier serves as a second underfill portion. The Young's modulus of the first underfill portion is smaller than the Young's modulus of the second underfill portion. The second underfill portion can be optionally replaced with a selected encapsulation. The selected encapsulation covers the chip and the carrier around the chip.

Abstract: An electronic device package comprises a substrate, a die, and a material having a Young's modulus of between about 0.1 megapascals and about 20 megapascals (at a solder reflow temperature) for attaching the die to the substrate. In one embodiment, the package utilizes a material having a Young's modulus of between about 0.1 megapascals and about 20 megapascals (at a solder reflow temperature) for attaching the die to the substrate. In an alternate embodiment, the package utilizes a material having a coefficient of thermal expansion ?2 of less than about 400 (four-hundred) ppm (parts per million)/° C. for attaching the die to the substrate. In another alternate embodiment, the package utilizes a rigid material for attaching the die to the substrate.