Abstract: A double sided cooled power module package having a single phase leg topology includes two IGBT and two diode semiconductor dies. Each IGBT die is spaced apart from a diode semiconductor die, forming a switch unit. Two switch units are placed in a planar face-up and face-down configuration. A pair of DBC or other insulated metallic substrates is affixed to each side of the planar phase leg semiconductor dies to form a sandwich structure. Attachment layers are disposed on outer surfaces of the substrates and two heat exchangers are affixed to the substrates by rigid bond layers. The heat exchangers, made of copper or aluminum, have passages for carrying coolant. The power package is manufactured in a two-step assembly and heating process where direct bonds are formed for all bond layers by soldering, sintering, solid diffusion bonding or transient liquid diffusion bonding, with a specially designed jig and fixture.

Abstract: An A-NPC circuit is configured so that the intermediate potential of two connected IGBTs is clamped by a bidirectional switch including two RB-IGBTs. Control is applied to the turn-on di/dt of the IGBTs during the reverse recovery of the RB-IGBTs. The carrier life time of an n? drift region in each RB-IGBT constituting the bidirectional switch is comparatively longer than that in a typical NPT structure device. A low life time region is also provided in the interface between the n? drift region and a p collector region, and extends between the n? drift region and the p collector region. Thus, it is possible to provide a low-loss semiconductor device, a method for manufacturing the semiconductor device and a method for controlling the semiconductor device, in which the reverse recovery loss is reduced while the reverse recovery current peak and the jump voltage peak during reverse recovery are suppressed.

Abstract: Provided is an electrostatic discharge (ESD) protection structure including a first and a second well region adjacent to each other, a first and a second doped region disposed in the first well region, a fourth and a fifth doped region disposed in the second well region, and a third doped region disposed in the first region and extending into the second well region. The second doped region is disposed between the first and the third doped regions, forming a diode with the first doped region, forming, together with the first well region and the second well region, a first bipolar junction transistor (BJT) electrically connecting to the diode, and having no contact window disposed thereon. The fourth doped region is disposed between the third and the fifth doped regions, forming a second BJT with the second well region and the first well region.

Abstract: A diode region and an IGBT region are formed in a semiconductor layer of a semiconductor device. A lifetime controlled region is formed in the semiconductor layer. In a plan view, the lifetime controlled region has a first lifetime controlled region located in the diode region and a second lifetime controlled region located in a part of the IGBT region. The second lifetime controlled region extends from a boundary of the diode region and the IGBT region toward the IGBT region. In the plan view, a tip of the second lifetime controlled region is located in a forming area of the body region in the IGBT region.

Abstract: A semiconductor substrate has at least two active regions, each having at least one active device that includes a gate electrode layer, and a shallow trench isolation (STI) region between the active regions. A decoupling capacitor comprises first and second dummy conductive patterns formed in the same gate electrode layer over the STI region. The first and second dummy conductive regions are unconnected to any of the at least one active device. The first dummy conductive pattern is connected to a source of a first potential. The second dummy conductive pattern is connected to a source of a second potential. A dielectric material is provided between the first and second dummy conductive patterns.

Abstract: An RRAM at an STI region is disclosed with a vertical BJT selector. Embodiments include defining an STI region in a substrate, implanting dopants in the substrate to form a well of a first polarity around and below an STI region bottom portion, a band of a second polarity over the well on opposite sides of the STI region, and an active area of the first polarity over each band of second polarity at the surface of the substrate, forming a hardmask on the active areas, removing an STI region top portion to form a cavity, forming an RRAM liner on cavity side and bottom surfaces, forming a top electrode in the cavity, removing a portion of the hardmask to form spacers on opposite sides of the cavity, and implanting a dopant of the second polarity in a portion of each active area remote from the cavity.

Abstract: An IGBT die structure includes an auxiliary P well region. A terminal, that is not connected to any other IGBT terminal, is coupled to the auxiliary P well region. To accelerate IGBT turn on, a current is injected into the terminal during the turn on time. The injected current causes charge carriers to be injected into the N drift layer of the IGBT, thereby reducing turn on time. To accelerate IGBT turn off, charge carriers are removed from the N drift layer by drawing current out of the terminal. To reduce VCE(SAT), current can also be injected into the terminal during IGBT on time. An IGBT assembly involves the IGBT die structure and an associated current injection/extraction circuit. As appropriate, the circuit injects or extracts current from the terminal depending on whether the IGBT is in a turn on time or is in a turn off time.

Abstract: Fast turn on silicon controlled rectifiers for ESD protection. A semiconductor device includes a semiconductor substrate of a first conductivity type; a first well of a second conductivity type; a second well of the second conductivity type; a first diffused region of the first conductivity type and coupled to a first terminal; a first diffused region of the second conductivity type; a second diffused region of the first conductivity type; a second diffused region of the second conductivity type in the second well; wherein the first diffused region of the first conductivity type and the first diffused region of the second conductivity type form a first diode, and the second diffused region of the first conductivity type and the second diffused region of the second conductivity type form a second diode, and the first and second diodes are series coupled between the first terminal and the second terminal.

Abstract: An ESD protection element is formed by a PN junction diode including an N+ type buried layer having a proper impurity concentration and a first P+ type buried layer and a parasitic PNP bipolar transistor which uses a second P+ type buried layer connected to a P+ type diffusion layer as the emitter, an N? type epitaxial layer as the base, and the first P+ type buried layer as the collector. The first P+ type buried layer is connected to an anode electrode, and the P+ type diffusion layer and an N+ type diffusion layer surrounding the P+ type diffusion layer are connected to a cathode electrode. When a large positive static electricity is applied to the cathode electrode, and the parasitic PNP bipolar transistor turns on to flow a large discharge current.

Abstract: A bipolar semiconductor device and manufacturing method. One embodiment provides a diode structure including a structured emitter coupled to a first metallization is provided. The structured emitter includes a first weakly doped semiconductor region of a first conductivity type which forms a pn-load junction with a weakly doped second semiconductor region of the diode structure. The structured emitter includes at least a highly doped first semiconductor island of the first conductivity type which at least partially surrounds a highly doped second semiconductor island of the second conductivity type.

Abstract: A semiconductor device having an active element and an MIM capacitor and a structure capable of reducing the number of the manufacturing steps thereof and a manufacturing method therefor are provided. The semiconductor device has a structure that the active element having an ohmic electrode and the MIM capacitor having a dielectric layer arranged between a lower electrode and an upper electrode are formed on a semiconductor substrate, wherein the lower electrode and ohmic electrode have the same structure. In an MMIC 100 in which an FET as an active element and the MIM capacitor are formed on a GaAs substrate 10, for example, a source electrode 16a and a drain electrode 16b, which are ohmic electrodes of the FET, are manufactured simultaneously with a lower electrode 16c of the MIM capacitor. Here the electrodes are formed with the same metal.

Abstract: A semiconductor substrate has at least two active regions, each having at least one active device that includes a gate electrode layer, and a shallow trench isolation (STI) region between the active regions. A decoupling capacitor comprises first and second dummy conductive patterns formed in the same gate electrode layer over the STI region. The first and second dummy conductive regions are unconnected to any of the at least one active device. The first dummy conductive pattern is connected to a source of a first potential. The second dummy conductive pattern is connected to a source of a second potential. A dielectric material is provided between the first and second dummy conductive patterns.

Abstract: The self heating of a high-performance bipolar transistor that is formed on a fully-isolated single-crystal silicon region of a silicon-on-insulator (SOI) structure is substantially reduced by forming a Schottky structure in the same fully-isolated single-crystal silicon region as the bipolar transistor is formed.

Abstract: An ESD protection element is formed by a PN junction diode including an N+ type buried layer having a proper impurity concentration and a first P+ type buried layer and a parasitic PNP bipolar transistor which uses a second P+ type buried layer connected to a P+ type diffusion layer as the emitter, an N? type epitaxial layer as the base, and the first P+ type buried layer as the collector. The first P+ type buried layer is connected to an anode electrode, and the P+ type diffusion layer and an N+ type diffusion layer surrounding the P+ type diffusion layer are connected to a cathode electrode. When a large positive static electricity is applied to the cathode electrode, and the parasitic PNP bipolar transistor turns on to flow a large discharge current.

Abstract: An ESD protection element is formed by a PN junction diode including an N+ type buried layer having a proper impurity concentration and a P+ type buried layer and a parasitic PNP bipolar transistor which uses a P+ type drawing layer connected to a P+ type diffusion layer as the emitter, an N? type epitaxial layer as the base, and a P type semiconductor substrate as the collector. The P+ type buried layer is connected to an anode electrode, and the P+ type diffusion layer and an N+ type diffusion layer connected to and surrounding the P+ type diffusion layer are connected to a cathode electrode. When a large positive static electricity is applied to the cathode electrode, the parasitic PNP bipolar transistor turns on to flow a large discharge current.

Abstract: An electrostatic discharge (ESD) protection circuit includes at least one bipolar transistor. At least one isolation structure is disposed in a substrate. The at least one isolation structure is configured to electrically isolate two terminals of the at least one bipolar transistor. At least one diode is electrically coupled with the at least one bipolar transistor, wherein a junction interface of the at least one diode is disposed adjacent the at least one isolation structure.

Abstract: Apparatuses and methods for electronic circuit protection are disclosed. In one embodiment, an apparatus comprises a well having an emitter and a collector region. The well has a doping of a first type, and the emitter and collector regions have a doping of a second type. The emitter region, well, and collector region are configured to operate as an emitter, base, and collector for a first transistor, respectively. The collector region is spaced away from the emitter region to define a spacing. A first spacer and a second spacer are positioned adjacent the well between the emitter and the collector. A conductive plate is positioned adjacent the well and between the first spacer and the second spacer, and a doping adjacent the first spacer, the second spacer, and the plate consists essentially of the first type.

Abstract: Provided are a monolithic microwave integrated circuit device and a method for forming the same. The method include: forming an HBT on a substrate; forming a wiring of the HBT and a bottom electrode of a capacitor on the substrate, with a first metal, the bottom electrode being spaced apart from the HBT; forming a first insulation layer on the substrate to cover the HBT and the bottom electrode; and forming a top electrode of the capacitor on the first insulation layer and forming a resistance pattern on the substrate, with a second metal, the resistance pattern being spaced apart from the capacitor, wherein an edge of the top electrode is spaced apart from an edge of the bottom electrode.

Abstract: Electrostatic discharge (ESD) protection clamps for I/O terminals of integrated circuit (IC) cores comprise a bipolar transistor with an integrated Zener diode coupled between the base and collector of the transistor. Variations in clamp voltage in different parts of the same IC chip or wafer caused by conventional deep implant geometric mask shadowing are avoided by using shallow implants and forming the base coupled anode and collector coupled cathode of the Zener using opposed edges of a single relatively thin mask. The anode and cathode are self-aligned, and the width of the Zener space charge region between them is defined by the opposed edges substantially independent of location and orientation of the ESD clamps on the die or wafer. Because the mask is relatively thin and the anode and cathode implants relatively shallow, mask shadowing is negligible and prior art clamp voltage variations are avoided.

Abstract: A vertical TVS (VTVS) circuit includes a semiconductor substrate for supporting the VTVS device thereon having a heavily doped layer extending to the bottom of substrate. Deep trenches are provided for isolation between multi-channel VTVS. Trench gates are also provided for increasing the capacitance of VTVS with integrated EMI filter.

Abstract: An electrostatic discharge (ESD) protection circuit includes a polysilicon diode, a switch element, and a load element. The poly silicon diode has a first terminal and a second terminal. The switch element has a control terminal coupled to the first terminal of the polysilicon diode, a first terminal coupled to the second terminal of the polysilicon diode, and a second terminal. The load element is coupled to the control terminal of the switch element and the second terminal of the switch element.

Abstract: An apparatus includes an electrostatic discharge (ESD) protection device. In one embodiment, the protection device electrically coupled between a first node and a second node of an internal circuit to be protected from transient electrical events. The protection device includes a bipolar device or a silicon-controlled rectifier (SCR). The bipolar device or SCR can have a modified structure or additional circuitry to have a selected holding voltage and/or trigger voltage to provide protection over the internal circuit. The additional circuitry can include one or more resistors, one or more diodes, and/or a timer circuit to adjust the trigger and/or holding voltages of the bipolar device or SCR to a desired level. The protection device can provide protection over a transient voltage that ranges, for example, from about 100 V to 330V.

Abstract: A semiconductor device includes a vertical IGBT and a vertical free-wheeling diode in a semiconductor substrate. A plurality of base regions is disposed at a first-surface side portion of the semiconductor substrate, and a plurality of collector regions and a plurality of cathode regions are alternately disposed in a second-surface side portion of the semiconductor substrate. The base regions include a plurality of regions where channels are provided when the vertical IGBT is in an operating state. The first-side portion of the semiconductor substrate include a plurality of IGBT regions each located between adjacent two of the channels, including one of the base regions electrically coupled with an emitter electrode, and being opposed to one of the cathode regions. The IGBT regions include a plurality of narrow regions and a plurality of wide regions.

Abstract: The ESD protection device includes a substrate, a well, a first doped region and a second doped region. The substrate has a first conductive type, and the substrate is electrically connected to a first power node. The well has a second conductive type, and is disposed in the substrate. The first doped region has the first conductive type, and is disposed in the well. The first doped region and the well are electrically connected to a second power node. The second doped region has the second conductive type, and is disposed in the substrate. The second doped region is in a floating state.

Abstract: By integrating a diode and a resistor connected in parallel into the same chip as an IGBT and connecting a cathode of the diode to a gate of the IGBT, the value of dv/dt can be limited to a predetermined range inside the chip of the IGBT without a deterioration in turn-on characteristics. Since the chip includes a resistor having such a resistance that a dv/dt breakdown of the IGBT can be prevented, the IGBT can be prevented from being broken by an increase in dv/dt at a site (user site) to which the chip is supplied.

Abstract: An electrostatic discharge (ESD) protection circuit includes a substrate, and a plurality of unit bipolar transistors formed in the substrate. Each of the plurality of unit bipolar transistors may include a first-conductivity-type buried layer formed in the substrate, a first-conductivity-type well formed over the first-conductivity-type buried layer, a second-conductivity-type well formed in the first-conductivity-type well, a first-conductivity-type vertical doping layer vertically formed from the surface of the substrate to the first-conductivity-type buried layer so as to surround the first-conductivity-type well, and a first-conductivity-type doping layer and a second conductivity-type doping layer formed in the second-conductivity-type well. The first-conductivity-type doping layer of any one of the adjacent unit bipolar transistors and the first-conductivity-type vertical doping layer of another one of the adjacent unit bipolar transistors may be connected to each other.

Abstract: A semiconductor device includes: a substrate; an active element cell area including IGBT cell region and a diode cell region; a first semiconductor region on a first side of the substrate in the active element cell area; a second semiconductor region on a second side of the substrate in the IGBT cell region; a third semiconductor region on the second side in the diode cell region; a fourth semiconductor region on the first side surrounding the active element cell area; a fifth semiconductor region on the first side surrounding the fourth semiconductor region; and a sixth semiconductor region on the second side below the fourth semiconductor region. The second semiconductor region, the third semiconductor region and the sixth semiconductor region are electrically coupled with each other.

Abstract: A high voltage device having a Schottky diode integrated with a MOS transistor includes a semiconductor substrate a Schottky diode formed on the semiconductor substrate, at least a first doped region having a first conductive type formed in the semiconductor substrate and under the Schottky diode, and a control gate covering a portion of the Schottky diode and the first doped region positioned on the semiconductor substrate.

Abstract: Provided are a monolithic microwave integrated circuit device and a method for forming the same. The method includes: forming an sub-collector layer, a collector layer, a base layer, an emitter layer, and an emitter cap layer on a Heterojunction Bipolar Transistor (HBT) region and a PIN diode region of a substrate; forming an emitter pattern and an emitter cap pattern in the HBT region and exposing the base layer by patterning the emitter layer and the emitter cap layer; and forming an intrinsic region by doping a portion of the collector layer of the PIN diode region with a first type impurity, the PIN diode region being spaced apart from the HBT region.

Abstract: An electrostatic discharge protection device includes a first bipolar transistor having a collector terminal connected with a first power supply terminal, an emitter terminal connected with the input/output terminal, and a base terminal connected with a second power supply terminal, a second bipolar transistor having a collector terminal connected with the second power supply terminal, an emitter terminal connected with the input/output terminal, and a base terminal connected with the first power supply terminal, one of the first and second bipolar transistors ensuring a continuity between the collector terminal and emitter terminal under such conditions that a potential difference between the first or second power supply terminal and the input/output terminal is lower than a breakdown voltage at a PN junction between the emitter terminal and the base terminal of the other bipolar transistor.

Abstract: Provided is a semiconductor device including a semiconductor substrate in which a diode region and an IGBT region are formed. A separation region formed of a p-type semiconductor is formed in a range between the diode region and the IGBT region and extending from an upper surface of the semiconductor substrate to a position deeper than both a lower end of an anode region and a lower end of a body region. A diode lifetime control region is formed within a diode drift region. A carrier lifetime in the diode lifetime control region is shorter than that in the diode drift region outside the diode lifetime control region. An end of the diode lifetime control region on an IGBT region side is located right below the separation region.

Abstract: Apparatuses and methods for electronic circuit protection are disclosed. In one embodiment, an apparatus comprises an internal circuit electrically connected between a first node and a second node, and a protection circuit electrically connected between the first node and the second node and configured to protect the internal circuit from transient electrical events. The protection circuit comprises a bipolar transistor having an emitter connected to the first node, a base connected to a third node, and a collector connected to a fourth node. The protection circuit further comprises a first diode electrically connected between the third node and the fourth node, and a second diode electrically connected between the second node and the fourth node. The first diode is an avalanche breakdown diode having an avalanche breakdown voltage lower than or about equal to a breakdown voltage associated with the base and the collector of the bipolar transistor.

Abstract: Apparatuses and methods for electronic circuit protection are disclosed. In one embodiment, an apparatus comprises a well having an emitter and a collector region. The well has a doping of a first type, and the emitter and collector regions have a doping of a second type. The emitter region, well, and collector region are configured to operate as an emitter, base, and collector for a first transistor, respectively. The collector region is spaced away from the emitter region to define a spacing. A first spacer and a second spacer are positioned adjacent the well between the emitter and the collector. A conductive plate is positioned adjacent the well and between the first spacer and the second spacer, and a doping adjacent the first spacer, the second spacer, and the plate consists essentially of the first type.

Abstract: A reverse conducting semiconductor device having an IGBT element region and a diode element region in one semiconductor substrate is provided. An electric current detection region is arranged adjacent to the IGBT element region, and a collector region of the IGBT element region is extended to connect with a collector region of the electric current detection region. Instability in the IGBT detection current caused by a boundary portion between the IGBT and the diode can be suppressed. In the same way, an electric current detection region is arranged adjacent to the diode element region, and a cathode region of the diode element region is extended to connect with a cathode region of the electric current detection region. Instability in the diode detection current caused by the boundary portion between the IGBT and the diode can be suppressed.

Abstract: Apparatus and methods are disclosed, such as those involving protection of a semiconductor junction of a semiconductor device. One such apparatus includes a bipolar transistor including an emitter, a base, and a collector; a first junction protection device including a first end electrically coupled to the emitter of the bipolar transistor, and a second end electrically coupled to a node; and a second junction protection device including a first end electrically coupled to a voltage reference, and a second electrically coupled to the emitter of the bipolar transistor. Each of the first and second junction protection devices may have a substantially higher leakage current than the leakage current of the base-emitter junction of the bipolar transistor when reverse biased.

Abstract: A high voltage integrated circuit contains a freewheeling diode embedded in a transistor. It further includes a control block controlling a high voltage transistor and a power block—including the high voltage transistor—isolated from the control block by a device isolation region. The high voltage transistor includes a semiconductor substrate of a first conductivity type, a epitaxial layer of a second conductivity type on the semiconductor substrate, a buried layer of the second conductivity type between the semiconductor substrate and the epitaxial layer, a collector region of the second conductivity type on the buried layer, a base region of the first conductivity type on the epitaxial layer, and an emitter region of the second conductivity type formed in the base region. The power block further includes a deep impurity region of the first conductivity type near the collector region to form a PN junction.

Abstract: An electrostatic discharge (ESD) protection circuit includes at least one bipolar transistor. At least one isolation structure is disposed in a substrate. The at least one isolation structure is configured to electrically isolate two terminals of the at least one bipolar transistor. At least one diode is electrically coupled with the at least one bipolar transistor, wherein a junction interface of the at least one diode is disposed adjacent the at least one isolation structure.

Abstract: A complementary bipolar semiconductor device (CBi semiconductor device) comprising a substrate of a first conductivity type, active bipolar transistor regions in the substrate, in which the base, emitter and collector of vertical bipolar transistors are arranged, vertical epitaxial-base npn bipolar transistors in a first subset of the active bipolar transistor regions, vertical epitaxial-base pnp bipolar transistors in a second subset of the active bipolar transistor regions, collector contact regions which are respectively arranged adjoining an active bipolar transistor region, and shallow field insulation regions which respectively laterally delimit the active bipolar transistor regions and the collector contact regions, wherein arranged between the first or the second or both the first and also the second subset of active bipolar transistor regions on the one hand and the adjoining collector contact regions on the other hand is a respective shallow field insulation region of a first type with a first depth

Abstract: An isolated diode comprises a floor isolation region, a dielectric-filled trench and a sidewall region extending from a bottom of the trench at least to the floor isolation region. The floor isolation region, dielectric-filled trench and a sidewall region are comprised in one terminal (anode or cathode) of the diode and together form an isolated pocket in which the other terminal of the diode is formed. In one embodiment the terminals of the diode are separated by a second dielectric-filled trench and sidewall region.

Abstract: The semiconductor structure of the present invention comprises: a P-well, a first N+ diffusion region, a first P+ diffusion region, a second P+ diffusion region, a first N-well, and a second N+ diffusion region. The semiconductor structure of the present invention comprises: a N-well, a first P+ diffusion region, a first N+ diffusion region, a second N+ diffusion region, a first P-well, and a second P+ diffusion region. Compared with the conventional semiconductor structure for realizing an ESD protection circuit, the semiconductor structure of the present invention requires a smaller area by utilizing the parasitic BJT to have the same ESD protection function. Brief summarized, the semiconductor structure disclosed by the present invention can be utilized for realizing an ESD protection circuit in a smaller area to reduce cost.

Abstract: Provided are a monolithic microwave integrated circuit device and a method for forming the same. The method includes: forming an sub-collector layer, a collector layer, a base layer, an emitter layer, and an emitter cap layer on a Heterojunction Bipolar Transistor (HBT) region and a PIN diode region of a substrate; forming an emitter pattern and an emitter cap pattern in the HBT region and exposing the base layer by patterning the emitter layer and the emitter cap layer; and forming an intrinsic region by doping a portion of the collector layer of the PIN diode region with a first type impurity, the PIN diode region being spaced apart from the HBT region.

Abstract: Provided are a monolithic microwave integrated circuit device and a method for forming the same. The method include: forming an HBT on a substrate; forming a wiring of the HBT and a bottom electrode of a capacitor on the substrate, with a first metal, the bottom electrode being spaced apart from the HBT; forming a first insulation layer on the substrate to cover the HBT and the bottom electrode; and forming a top electrode of the capacitor on the first insulation layer and forming a resistance pattern on the substrate, with a second metal, the resistance pattern being spaced apart from the capacitor, wherein an edge of the top electrode is spaced apart from an edge of the bottom electrode.

Abstract: According to an embodiment of the present invention, an electrostatic breakdown protection method protects a semiconductor device from a surge current impressed between a first terminal and a second terminal, the semiconductor device including: a diode impressing a forward-bias current from the first terminal to the second terminal; and a bipolar transistor impressing a current in a direction from the second terminal to the first terminal under an ON state, a continuity between a collector terminal and an emitter terminal of the bipolar transistor being attained before a potential difference between the first terminal and the second terminal reaches such a level that the diode is broken down.

Abstract: An electrostatic discharge (ESD) protection element using an NPN bipolar transistor, includes: a trigger element connected at one end with a pad. The NPN bipolar transistor includes: a first base diffusion layer; a collector diffusion layer connected with the pad; a trigger tap formed on the first base diffusion layer and connected with the other end of the trigger element through a first wiring; and an emitter diffusion layer and a second base diffusion layer formed on the first base diffusion layer and connected in common to a power supply through a second wiring which is different from the first wiring.

Abstract: A semiconductor device of the present invention comprises: a P type semiconductor substrate, an N-well, a first P+ diffusion region, a second P+ diffusion region, a Schottky diode, a first N+ diffusion region, a second N+ diffusion region, a third P+ diffusion region, a fourth P+ diffusion region, a first insulation layer, a second insulation layer, a first parasitic bipolar junction transistor (BJT), and a second parasitic BJT. The Schottky diode is coupled to an input signal. The first N+ diffusion region and the second N+ diffusion region are coupled to a voltage source, respectively. When a voltage level of the input signal is higher than a voltage level of the voltage source, the Schottky diode conducts charges to make the first parasitic BJT and the second parasitic BJT not conducted.

Abstract: A vertical TVS (VTVS) circuit includes a semiconductor substrate for supporting the VTVS device thereon having a heavily doped layer extending to the bottom of substrate. Deep trenches are provided for isolation between multi-channel VTVS. Trench gates are also provided for increasing the capacitance of VTVS with integrated EMI filter.

Abstract: An integrated structure of an IGBT and a diode includes a plurality of doped cathode regions, and a method of forming the same is provided. The doped cathode regions are stacked in a semiconductor substrate, overlapping and contacting with each other. As compared with other doped cathode regions, the higher a doped cathode region is disposed, the larger implantation area the doped cathode region has. The doped cathode regions and the semiconductor substrate have different conductive types, and are applied as a cathode of the diode and a collector of the IGBT. The stacked doped cathode regions can increase the thinness of the cathode, and prevent the wafer from being overly thinned and broken.

Abstract: A diode for fast switching applications includes a base layer of a first conductivity type with a first main side and a second main side opposite the first main side, an anode layer of a second conductivity type, which is arranged on the second main side, a plurality of first zones of the first conductivity type with a higher doping concentration than the base layer, and a plurality of second zones of the second conductivity type. The first and second zones are arranged alternately on the first main side. A cathode electrode is arranged on top of the first and second zones on the side of the zones which lies opposite the base layer, and a anode electrode is arranged on top of the anode layer on the side of the anode layer which lies opposite the base layer. The base layer includes a first sublayer, which is formed by the second main sided part of the base layer, and a second sublayer, which is formed by the first main sided part of the base layer.

Abstract: Methods and apparatus according to various aspects of the present invention may operate in conjunction with a resistor formed of a lightly-doped P-type region formed in a portion of a lightly-doped N-type semiconductor well extending on a lightly-doped P-type semiconductor substrate, the well being laterally delimited by a P-type wall extending down to the substrate, the portion of the well being delimited, vertically, by a heavily-doped N-type area at the limit between the well and the substrate and, horizontally, by a heavily-doped N-type wall. A diode may be placed between a terminal of the resistor and the heavily-doped N-type wall, the cathode of the diode being connected to said terminal.

Abstract: Electrostatic discharge (ESD) protection clamps (61, 95) for I/O terminals (22, 23) of integrated circuit (IC) cores (24) comprise a bipolar transistor (25) with an integrated Zener diode (30) coupled between the base (28) and collector (27) of the transistor (25). Prior art variations (311, 312, 313, 314) in clamp voltage in different parts of the same IC chip or wafer caused by prior art deep implant geometric mask shadowing are avoided by using shallow implants (781, 782) and forming the base (28, 68) coupled anode (301, 75) and collector (27, 70, 64) coupled cathode (302, 72) of the Zener (30) using opposed edges (713, 714) of a single relatively thin mask (71, 71?). The anode (301, 75) and cathode (302, 72) are self-aligned and the width (691) of the Zener space charge region (69) therebetween is defined by the opposed edges (713, 714) substantially independent of location and orientation of the ESD clamps (61, 95) on the die or wafer.