Including Only Semiconductor Components Of A Single Kind, E.g., All Bipolar Transistors, All Diodes, Or All Cmos (epo) Patents (Class 257/E27.046)
E Subclasses
- Combination of lateral and vertical transistors only (EPO) (Class 257/E27.054)
- Vertical bipolar transistor only (EPO) (Class 257/E27.055)
- Vertical direct transistor of the same conductivity type having different characteristics, (e.g. Darlington transistor) (EPO) (Class 257/E27.056)
- Vertical complementary transistor (EPO) (Class 257/E27.057)
- Combination of direct and inverse vertical transistors (e.g., collector acts as emitter) (EPO) (Class 257/E27.058)
- Field-effect transistor with insulated gate (EPO) (Class 257/E27.06)
- Combination of depletion and enhancement field-effect transistors (EPO) (Class 257/E27.061)
- Complementary MIS (EPO) (Class 257/E27.062)
- Means for preventing a parasitic bipolar action between the different transistor regions, e.g. latch-up prevention (EPO) (Class 257/E27.063)
- Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS (EPO) (Class 257/E27.064)
- Including an N-well only in the substrate (EPO) (Class 257/E27.065)
- Including a P-well only in the substrate (EPO) (Class 257/E27.066)
- Including both N- and P- wells in the substrate, e.g. twin-tub (EPO) (Class 257/E27.067)
- Schottky barrier gate field-effect transistor (EPO) (Class 257/E27.068)
- PN junction gate field-effect transistor (Class 257/E27.069)