Abstract: Provided is a method for transferring, onto a second substrate, at least one of functional regions arranged and joined to a first separation layer that is disposed on a first substrate and that becomes separable by a treatment, in which regions on the second substrate where the functional regions are to be transferred have a second separation layer that becomes separable by a treatment. The method includes a step of joining the first substrate to the second substrate by bonding such that the functional regions contact the second separation layer; a step of separating the functional regions from the first substrate at the first separation layer; and a step of, before or after the step of separation, forming separation grooves penetrating through the second substrate and the second separation layer from a surface of the second substrate, the surface being opposite to a surface having the second separation layer thereon.

Abstract: The present invention relates to a semiconductor light emitting device including: a substrate for element mounting; a wiring provided on the substrate; an LED element provided on the substrate and electrically connected to the wiring; an encapsulating resin layer for encapsulating the LED element; and a wavelength conversion layer which contains a phosphor material and converts a wavelength of light emitted by the LED element, in which the wavelength conversion layer is provided on an upper side of the LED element, and a diffusive reflection resin layer is provided in a state that side faces of the LED element are surrounded therewith, and an area at the LED element face side of the wavelength conversion layer is at least twice larger by area ratio than an area of light emitting area on an upper surface of the LED element.

Abstract: An organic electroluminescence device includes a cathode, a stacked structure provided on the cathode and including an organic layer that includes an organic light emitting layer, and a transparent anode provided on the stacked structure, The transparent anode includes a metal oxide and a conductive polymer.

Abstract: A semiconductor material structure includes at least one region capable of generating electrons and holes each having an associated mean kinetic energy during operation. A material layer in proximity to the region provides an associated potential energy larger than the mean kinetic energy associated with the generated electrons and the mean kinetic energy associated with the holes.

Abstract: An organic light emitting diode (OLED) display is disclosed. The organic light emitting diode (OLED) display includes an organic light emitter that has a first electrode, an organic emission layer, and a second electrode. The OLED also has an encapsulation substrate covering the organic light emitter and an assistance electrode disposed between the encapsulation substrate and the second electrode. The assistance electrode can be disposed in a non-light-emitting region between the organic light emitter and the second electrode, and can have a lower resistance than a resistance of the second electrode.

Abstract: A light-emitting unit array includes a plurality of light-emitting units arranged and integrated monolithically in an array, and each of the light-emitting units includes a first doped type layer, a second doped type layer, a light-emission layer, and a photonic crystal structure. The light emission layer is disposed between the first doped type layer and the second doped type layer, wherein the second doped type layer has a surface facing away from the light emission layer. The photonic crystal structure is disposed on the surface of the second doped type layer.

Abstract: A display device capable of keeping the luminance constant irrespective of temperature change is provided as well as a method of driving the display device. A current mirror circuit composed of transistors is placed in each pixel. A first transistor and a second transistor of the current mirror circuit are connected such that the drain current of the first transistor is kept in proportion to the drain current of the second transistor irrespective of the load resistance value. The drain current of the first transistor is controlled by a driving circuit in accordance with a video signal and the drain current of the second transistor is caused to flow into an OLED, thereby controlling the OLED drive current and the luminance of the OLED.

Abstract: In summary, the present invention relates to a device, a system, a method and a computer program enabling a thermally improved packaging of a plurality of light emitting diodes (110, 112, 114) and at least one integrated circuit (116). A most temperature sensitive light emitting diode (110) of the plurality of light emitting diodes is located between less temperature sensitive light emitting diodes (112, 114) of the plurality of light emitting diodes and the at least one integrated circuit. Further, various additional measures such as e.g. varying at least one mounting area (102, 104, 106) of at least one light emitting diode, providing at least one thermal shielding (118), etc. can be taken in order to thermally optimize the packaging.

Abstract: Example embodiments of the present invention relate to a light emitting device having a connection structure and a method of manufacturing the light emitting device. The method of manufacturing may include forming a light emitting region and electrode layers on a substrate in which a plurality of cell regions and a bridge for partially connecting the cell regions are disposed, thereby providing a light emitting device that controls stress with relative ease and integrates electrical connections between the cell regions.

Abstract: An active matrix substrate (5) is provided with: a plurality of source wiring lines (S) and a plurality of gate wiring lines (G) which are arranged in a matrix; and pixels (P) having thin film transistors (25) disposed in the vicinity of the intersections of the source wiring lines (S) and the gate wiring lines (G), and pixel electrodes (26) connected to the thin film transistors (25). In the active matrix substrate (5), a base material (5a) is disposed in such a manner that the source wiring lines (S) and the gate wiring lines (G) intersect each other, and on the base material (5a), auxiliary capacity electrodes (28), which are provided on the pixel basis, are made of transparent electrodes, and generate an auxiliary capacity, and auxiliary capacity wiring lines (29), which are connected to the auxiliary capacity electrodes (28) and are made of an aluminum alloy, are provided.

Abstract: Exemplary embodiments of the present invention provide light emitting diode (LED) packages which include a housing configured to surround uplift portions formed on lead frames electrically connected to an LED chip. The LED package includes an LED chip, a first lead frame and a second lead frame electrically connected to the LED chip, the first lead frame and the second lead frame respectively including a first uplift portion and a second uplift portion on regions thereof facing each other, and a housing supporting the first lead frame and the second lead frame, a first side of the housing exposed to the outside. The first lead frame and the second lead frame each include a first side parallel to the first side of the housing and a second side opposite to the first side.

Abstract: A light emitting device package is provided comprising a substrate, a first light emitting device, a body including a first lead frame on which the first light emitting device is disposed and a second lead frame separated from the first lead frame and an ESD device which contacts the first and second lead frames, and at least a part to which is exposed the outside of the body.

Abstract: A light emitting device having a structure in which oxygen and moisture are prevented from reaching light emitting elements, and a method of manufacturing the same, are provided. Further, the light emitting elements are sealed by using a small number of process steps, without enclosing a drying agent. The present invention has a top surface emission structure. A substrate on which the light emitting elements are formed is bonded to a transparent sealing substrate. The structure is one in which a transparent second sealing material covers the entire surface of a pixel region when bonding the two substrates, and a first sealing material (having a higher viscosity than the second sealing material), which contains a gap material (filler, fine particles, or the like) for protecting a gap between the two substrates, surrounds the pixel region. The two substrates are seated by the first sealing material and the second sealing material.

Abstract: An electro-optical device includes: a pixel region that is formed on a substrate and in which a light emitting element that has a first electrode, a second electrode and a light emitting layer formed between the first electrode and the second electrode is arranged; a partition wall portion that is formed above the substrate and located on an outer side of the pixel region; a connecting line that is formed above the substrate and located on an outer side of the partition wall portion; and a connecting section that is formed above the substrate and electrically connects the second electrode to the connecting line, wherein the second electrode covers and extends over the pixel region and the partition wall portion and does not overlap the connecting line in a planar view.

Abstract: A light-emitting diode packaging structure comprises a light-emitting diode and first and second metal plates on which the light-emitting diode is mounted. The light-emitting diodes includes first and second electrode leads, the second electrode lead having first and second contact surfaces on an outer edge of the second electrode lead. The first metal plate includes at least one clamping portion that clamps and fixes the first electrode lead on the first metal plate. The second metal plate includes at least first and second clamping portions. The first contact surface of the second electrode lead contacts the first clamping portion, and the second contact surface of the second electrode lead contacts the second clamping portion, such that the light-emitting diode is fixed on the second metal plate in at least two dimensions parallel to a primary surface of the second metal plate on which the light-emitting diodes is mounted.

Abstract: A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.

Abstract: Disclosed are a light emitting diode having a thermal conductive substrate and a method of fabricating the same. The light emitting diode includes a thermal conductive insulating substrate. A plurality of metal patterns are spaced apart from one another on the insulating substrate, and light emitting cells are located in regions on the respective metal patterns. Each of the light emitting cells includes a P-type semiconductor layer, an active layer and an N-type semiconductor layer. Meanwhile, metal wires electrically connect upper surfaces of the light emitting cells to adjacent metal patterns. Accordingly, since the light emitting cells are operated on the thermal conductive substrate, a heat dissipation property of the light emitting diode can be improved.

Abstract: Techniques for light emitting diode (LED) lighting with heat spreading in illumination gaps. Inexpensive structural aluminum may be suitably employed to form a passive heat spreading mount for plural LEDs whose illumination collectively combines to provide the light needed by a particular lighting fixture, such as a pendant chandelier, by way of example, by angling fins of the passive heat spreading mount to correspond to illumination gaps of the LEDs.

Abstract: A display unit capable of being simply designed and manufactured by using more simplified light emitting device structure while capable of high definition display and display with superior color reproducibility and a manufacturing method thereof are provided. The display unit is a display unit (1), wherein a plurality of organic EL devices (3B), (3G), and (3R), in which a function layer (6) including a light emitting layer (11) is sandwiched between a lower electrode (4) made of a light reflective material and a semi-transmissive upper electrode (7), and which has a resonator structure in which light h emitted in the light emitting layer (11) is resonated using a space between the lower electrode (4) and the upper electrode (7) as a resonant section (15) and is extracted from the upper electrode (7) side are arranged on a substrate (2).

Abstract: A method for creating an improved signal light is disclosed. For example, the improved signal light includes a housing, one or more first type of light emitting diodes (LEDs) emitting a light energy having a first dominant wavelength deployed in the housing, one or more second type of LEDs emitting a light energy having a second dominant wavelength deployed in the housing, a filter and a mixer. The filter may filter the light energy of the one or more second type of LEDs such that only a third dominant wavelength passes from the one or more second type of LEDs. The mixer may mix the light energy having the first dominant wavelength and the filtered light energy having the third dominant wavelength to form a light energy having a desired fourth dominant wavelength.

Abstract: A light emitting device package is provided which may prevent a Zener element mounted on an electrode from being positioned on an inclined plane of a cavity. The light emitting device package may include a light emitting device mounted on a first electrode, a Zener element mounted on a second electrode, and a body having cavity inclined planes that form a cavity on the first and second electrodes. The cavity inclined planes may include a first cavity inclined plane adjacent to the Zener element. The first cavity inclined plane may include an inclined plane forming a first inclination angle with respect to the second electrode and an interfacing plane forming a second inclination angle with respect to the second electrode, the second inclination angle being different from the first inclination angle.

Abstract: An LED package structure for increasing light-emitting efficiency and controlling light-projecting angle includes a substrate unit, a light-emitting unit, a light-reflecting unit and a package unit. The substrate unit has a substrate body and a chip-placing area disposed on a top surface of the substrate body. The light-emitting unit has a plurality of LED chips electrically disposed on the chip-placing area. The light-reflecting unit has an annular reflecting resin body surroundingly formed on the top surface of the substrate body by coating. The annular reflecting resin body surrounds the LED chips that are disposed on the chip-placing area to form a resin position limiting space above the chip-placing area. The package unit has a translucent package resin body disposed on the top surface of the substrate body in order to cover the LED chips. The position of the translucent package resin body is limited in the resin position limiting space.

Abstract: A light-emitting diode chip includes a first electrode and a metal composite layer. The metal composite layer is disposed on the first electrode and has a nickel layer. Since the metal composite layer is disposed on the first electrode, the yield of the wedge bonding can be increased, and the chip damage can be avoided.

Abstract: A display device and a method of manufacturing the same. In one embodiment, a display device includes a substrate having a pixel region, a transistor region and a capacitor region, a transistor arranged within the transistor region of the substrate and a capacitor arranged within the capacitor region of the substrate, wherein the capacitor includes a lower electrode arranged on the substrate, a gate insulating layer arranged on the lower electrode and an upper electrode arranged on the gate insulating layer and overlapping the lower electrode, the upper electrode includes a first conductive layer and a second conductive layer arranged on the first conductive layer, wherein the first conductive layer is opaque.

Abstract: An LED semiconductor body includes a number of at least two radiation-generating active layers. Each active layer has a forward voltage, wherein the number of active layers is adapted to an operating voltage in such a way that the voltage dropped across a series resistor connected in series with the active layers is at most of the same magnitude as a voltage dropped across the LED semiconductor body. The invention furthermore describes various uses of the LED semiconductor body.

Abstract: A light emitting diode demonstrating high luminescence efficiency and comprising a Group IV semiconductor such as silicon or germanium equivalent thereto as a basic component formed on a silicon substrate by a prior art silicon process, and a fabricating method of waveguide thereof are provided. The light emitting diode of the invention comprises a first electrode for implanting electrons, a second electrode for implanting holes, and a light emitting section electrically connected to the first and the second electrode, wherein the light emitting section is made out of single crystalline silicon and has a first surface and a second surface facing the first surface, wherein with respect to plane orientation (100) of the first and second surfaces, the light emitting section crossing at right angles to the first and second surfaces is made thinner, and wherein a material having a high refractive index is arranged around the thin film section.

Abstract: There is provided a highly reliable semiconductor light emitting device even in using for street lamps or traffic signals, which can be used in place of electric lamps or fluorescent lamps by protecting from surges such as static electricity or the like. A plurality of light emitting units (1) are formed, by forming a semiconductor lamination portion by laminating semiconductor layers on a substrate so as to form a light emitting layer, by electrically separating the semiconductor lamination portion into a plurality, and by providing a pair of electrodes (19) and (20). The light emitting units (1) are respectively connected in series and/or in parallel with wiring films (3). An inductor (8) absorbing surges is connected, in series, to the plurality of light emitting units (1) connected in series between electrode pads (4a) and (4b) connected to an external power source. For an example, the inductor (8) is formed by arranging the plurality of light emitting units (1) in a whirl shape.

Abstract: Provided is a light emitting device package. The light emitting device package includes a body having a cavity, a plurality of lead frames within the cavity, a light emitting device on at least one of the plurality of lead frames, and a moisture permeation prevention member between each of the lead frames and the body. Each of the lead frames includes a first frame disposed within the cavity, a second frame disposed on a lower surface of the body, and a third frame connecting the first frame to the second frame. The second frame of the lead frames is disposed within the body and at least one portion of the second frame is inclined with respect to the lower surface of the body. The moisture permeation prevention member is disposed on at least third frame of each of the lead frames.

Abstract: An LED module includes a layer stack of a substrateless LED, an emission area of the layer stack, the emission area being provided for light emission, a substrate having a top side on which the substrateless LED is arranged, contact areas arranged at a side area of the substrate, wherein the side area is perpendicular to the emission area, and/or including a base body which has contact areas at a side area and on which the substrate is mounted in such a way that the side area is perpendicular to the emission area, a first connection line between the LED and one of the contact area, and a second connection line between the LED and another of the contact areas.

Abstract: Provided are a light emitting device package and a lighting system including the same. The light emitting device package includes: a body, a plurality of electrode layers, a light emitting device, and a molding member. The body includes a plurality of pits. The electrode layers include first protrusions disposed in the pits, and second protrusions protruding in a direction opposite to the first protrusions. The light emitting device is disposed on at least one of the plurality of electrode layers. The molding member is disposed on the light emitting device.

Abstract: An LED multi-chip bonding die (1) comprises a packaging enclosure, a plurality of LED chips and a packaging cover, wherein the chips are arranged in one line from top to bottom on the emitting platform. Large area electrodes are equipped on the packaging enclosure and the packaging cover is made of transparent silicon gel so that the bonding die can emit larger light energy and higher luminance via the packaging cover while the heat produced by the chips can be quickly dissipated by the electrodes. A light strip (20) equipped with the bonding die comprises a plurality of bonding die sections and circuit board (2) and each bonding die section (1) comprises four LED multi-chip bonding dies (1) and a current-limiting resistor in series circuit. Each series circuit is connected in parallel and circuit board (2) is printed circuit board which can provide a optimal heat-dissipating structure for chips of bonding die.

Abstract: Disclosed is a light emitting device package and a lighting system. The light emitting device package includes a body, a first lead frame on the body, a plurality of light emitting diodes on the first lead frame, and a molding member on the light emitting diodes. The distance between the light emitting diodes includes a distance equal to or less than a length of a first side of a first light emitting diode of the light emitting diodes.

Abstract: Disclosed herein is a method for producing an LED array grid including the steps of (i) arranging N electrically conducting parallel wires, where N is an integer >1, thus creating an array of wires having a width D perpendicular to a direction of the wires, (ii) arranging LED components to the array of wires such that each LED component is electrically coupled to at least two adjacent wires, (iii) stretching the array of wires such that the width D increases, and arranging the stretched LED array grid onto a plate or between two plates

Abstract: An LED lamp (A1) includes a plurality of LEDs (2), a retainer (1) on which the light LEDs (2) are mounted, and a wiring pattern formed on the retainer (1) and electrically connected to the LEDs (2). The retainer (1) includes a plurality of substrates (11, 12, 15). Of the plurality of substrates (11, 12, 15), two adjacent substrates (11, 12) are connected to each other by a pair of bendable connection members (32a, 32b). The two substrates (11, 12) are arranged in such a manner that their normal line directions differ from each other.

Abstract: A projection system includes a light source module illuminating a plurality of monochromic lights, at least one optical modulator modulating the lights illuminated by the light source module according to each of color signals, a color combining prism combining the monochromic lights modulated by the optical modulator to form an image, and a projection lens projecting the image formed by the color combining prism toward a screen. A semiconductor diode including a P type semiconductor layer, an intrinsic semiconductor layer, and an N type semiconductor layer to absorb or transmit the monochromic lights according to the value of a reverse bias voltage is arranged in units of pixels.

Abstract: A method for fabricating light emitting diode (LEDs) comprises providing a plurality of LEDs on a substrate wafer, each of which has an n-type and p-type layer of Group-III nitride material formed on a SiC substrate with the n-type layer sandwiched between the substrate and p-type layer. A conductive carrier is provided having a lateral surface to hold the LEDs. The LEDs are flip-chip mounted on the lateral surface of the conductive carrier. The SiC substrate is removed from the LEDs such that the n-type layer is the top-most layer. A respective contact is deposited on the n-type layer of each of the LEDs and the carrier is separated into portions such that each of the LEDs is separated from the others, with each of the LEDs mounted to a respective portion of said carrier.

Abstract: A solid state light sheet and method of fabricating the sheet are disclosed. In one embodiment, bare LED chips have top and bottom electrodes, where the bottom electrode is a large reflective electrode. The bottom electrodes of an array of LEDs (e.g., 500 LEDs) are bonded to an array of electrodes formed on a flexible bottom substrate. Conductive traces are formed on the bottom substrate connected to the electrodes. A transparent top substrate is then formed over the bottom substrate. Various ways to connect the LEDs in series are described along with many embodiments. In one method, the top substrate contains a conductor pattern that connects to LED electrodes and conductors on the bottom substrate.

Abstract: A multichip light-emitting-diode (LED) package includes a printed circuit board (PCB) having a tapered via hole and a circuit interconnection line on a surface of the PCB. An inclined surface of each via hole is used as a reflection plate reflecting light emitted by an LED chip located in the via hole. Each LED chip is directly bonded to a metal base for radiating heat. Additional heat radiation structures and reflection plates are not required, thus simplifying the structure of and manufacture of the multichip LED package, reducing manufacturing costs.

Abstract: A light emitting device according to the embodiment includes a conductive support member; a light emitting structure on the conductive support member including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second semiconductor layers; and a protective device on the light emitting structure.

Abstract: Embodiments of the present disclosure relate to a novel semiconductor. In one aspect, the semiconductor may include a transparent layer having a first surface, a first doped layer, a second doped layer, and an active layer. The first doped layer may be formed over the first surface of the transparent layer and have a plurality of first-type electrodes formed thereon. The second doped layer may be formed over the first surface of the transparent layer and have a plurality of second-type electrodes formed thereon. The active layer may be formed between the first doped layer and the second doped layer. A distance between at least one of the first-type electrodes and a nearest other one of the first-type electrodes may be greater than each of respective distances between the at least one of the first-type electrodes and more than two of the second-type electrodes.

Abstract: One or more circuit elements such as silicon diodes, resistors, capacitors, and inductors are disposed between the semiconductor structure of a semiconductor light emitting device and the connection layers used to connect the device to an external structure. In some embodiments, the n-contacts to the semiconductor structure are distributed across multiple vias, which are isolated from the p-contacts by one or more dielectric layers. The circuit elements are formed in the contacts-dielectric layers-connection layers stack.

Abstract: A semiconductor device capable of inputting signals and power without the use of an FPC is provided. The semiconductor device includes a first substrate and a second substrate. A receiver antenna is provided on a surface side of the first substrate. The second substrate is provided with a transmitter antenna and an integrated circuit. The second substrate is attached on a back side of the first substrate. The receiver antenna and the transmitter antenna overlap with each other with the first substrate provided therebetween. Thus, the distance between the antennas can be kept constant, so that signals and power can be received highly efficiently.

Abstract: An arrangement having at least two light-emitting semiconductor components (101, 111) arranged adjacent to one another has envelopes (102, 112) at least partly surrounding the at least two light-emitting semiconductor components in each case. The envelopes contain a converter substance, which partly or completely converts the wavelength range of the radiation emitted by the semiconductor components. At least one optical damping element (103) is arranged between the at least two light-emitting semiconductor components, which optically isolates the respective envelopes of the semiconductor components in order to reduce a coupling-in from at least one envelope (102) into at least one other of the envelopes (112), or from at least one semiconductor component (101) into the envelope (112) of at least one of the other semiconductor components (111).

Abstract: A light emitting device comprises: an LED chip array comprising a plurality of LEDs formed on a single die (monolithic chip array) and at least one discrete LED that is separate from the LED chip array connected in series with the LED chip array. In an AC-drivable device the LED chip array is AC-drivable and two or more discrete LEDs are configured to be AC-drivable. The device can further comprise a package in which the LED chip array and discrete LED(s) are mounted. The discrete LEDs are configured such that positive and negative half wave periods of an AC drive voltage are mapped onto oppositely connected LED such that oppositely connected LED chips are alternately operable on a respective half wave period.

Abstract: The present invention relates to the field of a light emitting device (1), comprising a light emitting diode (2) arranged on a submount (3), said device having a lateral circumference surface (6) and a top surface (8), and an optically active coating layer (7), said coating layer (7): covering along at least a part of said circumference surface (6), extending from the submount (3) to said top surface (8), and essentially not covering the top surface (8). A method for producing the device is also disclosed.

Abstract: Electrically pixelated luminescent devices, methods for forming electrically pixelated luminescent devices, systems including electrically pixelated luminescent devices, methods for using electrically pixelated luminescent devices.

Abstract: Each pixel region includes first and second pixel electrodes (17a, 17b) and first-third capacitor electrodes (67x-67z) each positioned on a layer where a data signal line (15) is positioned. One conductive electrode (9) of a transistor, the first pixel electrode (17a), and the second capacitor electrode (67y) are electrically connected with one another. Each of the first and third capacitor electrodes (67x, 67z) is electrically connected with the second pixel electrode (17y). The first-third capacitor electrodes are aligned in this order in a row direction in such a manner as to overlap a retention capacitor line (18) via a first insulating film, and the second capacitor electrode (67y) overlaps the second pixel electrode (17b) via a second insulating film. This allows increasing production yields of an active matrix substrate based on a capacitive coupling pixel division system and a liquid crystal panel including the active matrix substrate.

Abstract: The light intensity emitted from a package is increased by adjusting a portion of the package encapsulant so that light impacting the side walls of the adjusted encapsulant portion will encounter total internal reflection (TIR) with the reflected light directed toward the top surface of the package. The adjusted portion of the package is positioned so that air can be used as the second (exterior) medium with the critical TIR angle being such that light emitted from a light source (such as from an LED die) will be directed primarily so as to escape the package from the top surface as opposed to being scattered internal to the package. In one embodiment, a lower portion of the encapsulant is surrounded by a casing to inwardly direct light from the light source that impacts the side of the encapsulant with an angle less than the critical TIR angle.

Abstract: A thin film transistor, a display device including the same, and a method of manufacturing the display device, the thin film transistor including a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; a semiconductor layer on the gate insulating layer; and source/drain electrodes electrically connected with the semiconductor layer, wherein the gate electrode has a thickness of about 500 ? to about 1500 ? and the gate insulating layer has a thickness of about 1600 ? to about 2500 ?.

Abstract: A light emitting diode (LED) structure and a LED packaging structure are disclosed. The LED structure includes a sub-mount, a stacked structure, an electrode, an isolation layer and a conductive thin film layer. The sub-mount has a first surface and a second surface opposite the first surface. The stacked structure has a first semiconductor layer, an active layer and a second semiconductor layer that are laminated on the first surface. The electrode is disposed apart from the stacked structure on the first surface. The isolation layer is disposed on the first surface to surround the stacked structure as well as cover the lateral sides of the active layer. The conductive thin film layer connects the electrode to the stacked structure and covers the stacked structure.