Abstract: An AC LED structure includes an insulating substrate, an LED set, a first metal layer and a second metal layer. The LED set has a first light-emitting diode and a second light-emitting diode, which are deposited on the insulating substrate and insulated from each other. The first metal layer and the second metal layer commonly have a first profile and serve to electrically connect the first light-emitting diode and the second light-emitting diode in an inverse parallel connection. In virtue of the first metal layer and the second metal layer of the first profile deposited on the first light-emitting diode and the second light-emitting diode, the LED set is allowed to be connected in series or in parallel with another LED set according to practical needs, so as to be able to endure high current density or high voltage operation.

Abstract: A luminous means includes a first group of semiconductor chips and a second group of semiconductor chips, each group includes at least one semiconductor chip, wherein the first and second groups of semiconductor chips are arranged laterally alongside one another at least in part with respect to a main emission direction of the luminous means, and a third group of semiconductor chips which includes at least one semiconductor chip and is disposed downstream of the first and the second group with respect to the main emission direction, wherein each group of semiconductor chips emits electromagnetic radiation in wavelength ranges that differ from one another in pairs, radiation emitted by the third group of semiconductor chips has the shortest-wave wavelength range, radiation emitted by the first and second group of semiconductor chips at least partly passes into the at least one semiconductor chip of the third group, and mixed radiation is emitted by an emission area of the luminous means.

Abstract: Light-emitting elements have a problem that their light-extraction efficiency is low due to scattered light or reflected light inside the light-emitting elements. The light-extraction efficiency of the light-emitting elements needs to be enhanced by a new method. According to the present invention, a light-emitting element includes a first layer generating holes, a second layer including a light-emitting layer for each emission color and a third layer generating electrons between an anode and a cathode, and the thickness of the first layer is different depending on each layer including the light-emitting layer for each emission color. A layer in which an organic compound and a metal oxide are mixed is used as the first layer, and thus, the driving voltage is not increased even when the thickness is increased, which is preferable.

Abstract: An optoelectronic module includes a layer structure having a plurality of semiconductor layers including a substrate layer, a first layer arrangement and a second layer arrangement arrangement, wherein 1) the first layer arrangement has a light-emitting layer arranged on the substrate layer, 2) the second layer arrangement contains at least one circuit that controls an operating state of the light-emitting layer, and 3) the second layer arrangement is arranged on the substrate layer and/or surrounded by the substrate layer.

Abstract: There is provided a light emitting display apparatus including at least a light emitting element and a thin film transistor (TFT) for driving the light emitting element, characterized in that a mechanism is provided in which a semiconductor constituting the TFT is irradiated with at least a part of light whose wavelength is longer than a predetermined wavelength among the light emitted by the light emitting element.

Abstract: A semiconductor component comprising at least one optically active first region (112) for emitting electromagnetic radiation (130) in at least one emission direction and at least one optically active second region (122) for emitting electromagnetic radiation (130) in the at least one emission direction. The first region (112) is here arranged in a first layer (110) and the second region (122) in a second layer (120), the second layer (120) being arranged over the first layer (110) in the emission direction and comprising a first passage region (124) assigned to the first region (112), which first passage region is at least partially transmissive for the electromagnetic radiation (130) of the first region (112).

Abstract: An optoelectronic semiconductor body comprises a semiconductor layer sequence which is subdivided into at least two electrically isolated subsegments. The semiconductor layer sequence has an active layer in each subarea. Furthermore, at least three electrical contact pads are provided. A first line level makes contact with a first of the at least two subsegments and with the first contact pad. A second line level makes contact with the second of the at least two subsegments and with a second contact pad. A third line level connects the two subsegments to one another and makes contact with the third contact pad. Furthermore, the line levels are each arranged opposite a first main face, wherein the first main face is intended to emit electromagnetic radiation that is produced.

Abstract: An object of the present invention is to provide a semiconductor device having high operation characteristic and reliability. The measures taken are: A pixel capacitor is formed between an electrode comprising anodic capable material over an organic resin film, an anodic oxide film of the electrode and a pixel electrode above. Since the anodic oxide film is anodically oxidized by applied voltage per unit time at 15 V/min, there is no wrap around on the electrode, and film peeling can be prevented.

Abstract: An organic light emitting device is formed by assembling a first substrate and a second substrate. The second substrate includes several sub-pixels. The first substrate includes several transistors and, for each subpixel, a first connecting electrode. The transistors are electrically connected to each other, and the first connecting electrode is electrically connected to the respective one of the transistors. Each sub-pixel includes a light-emitting region and a non light-emitting region. A second connecting electrode is formed within the non light-emitting region and projects toward the first substrate. The first and second substrates are electrically connected via the connection of the first and second connecting electrodes.

Abstract: A display panel having a first region, a second region and a third region is provided. The display panel includes an active device array substrate, an opposite substrate, a display medium between the active device array substrate and the opposite substrate, and spacers arranged between the active device array substrate and the opposite substrate for maintaining a cell gap. The active device array substrate includes an active device array in the first region, a pad in the second region, a driving circuit in the third region, and a first alignment layer covering the first region, the second region and the third region. A thickness of the first alignment layer in the third region corresponding to the driving circuit is increased to be greater than those in the first region and the second region for buffering the pressure applied by the spacers.

Abstract: A display device capable of keeping the luminance constant irrespective of temperature change is provided as well as a method of driving the display device. A current mirror circuit composed of transistors is placed in each pixel. A first transistor and a second transistor of the current mirror circuit are connected such that the drain current of the first transistor is kept in proportion to the drain current of the second transistor irrespective of the load resistance value. The drain current of the first transistor is controlled by a driving circuit in accordance with a video signal and the drain current of the second transistor is caused to flow into an OLED, thereby controlling the OLED drive current and the luminance of the OLED.

Abstract: A display device includes: first dummy pixels including a self-emission element emitting first color light corresponding to emission colors of pixels in a display area; second dummy pixels including a self-emission element emitting the first color light and a self-emission element emitting second color light and causing both self-emission elements to emit light at the same time; a deterioration degree calculating unit calculating a deterioration degree in brightness of the self-emission element emitting the first color light on the basis of a brightness detection result of the first dummy pixels and calculating a deterioration degree in current flowing in the self-emission element emitting the first color light on the basis of brightness detection results of the first and second dummy pixels; and a correction unit correcting the brightness of effective pixels contributing to an image display on the basis of the deterioration degree in brightness and the deterioration degree in current calculated by the deteri

Abstract: An LED lamp A1 is elongated in an axial direction x and includes a plurality of LED modules 30. Respective main light irradiation directions of the LED modules 30 are directed outward in radial directions that are perpendicular to the axial direction x, and the main light irradiation directions of the LED modules 30 are different from each other as viewed in the axial direction x. This arrangement provides a wider light irradiation range as viewed in the axial direction x.

Abstract: Methods for fabricating LED chips from a wafer and devices fabricated using the methods with one method comprising depositing LED epitaxial layers on an LED growth wafer to form a plurality of LEDs on the growth wafer. A single crystalline phosphor is bonded over at least some the plurality of LEDs so that at least some light from the covered LEDs passes through the single crystalline phosphor and is converted. The LED chips can then be singulated from the wafer to provide LED chips each having a portion of said single crystalline phosphor to convert LED light.

Abstract: The present invention relates to a light emitting element with arrayed cells, a method of manufacturing the same, and a light emitting device using the same. The present invention provides a light emitting element including a light emitting cell block with a plurality of light emitting cells connected in series or parallel on a single substrate, and a method of manufacturing the same, wherein each of the plurality of light emitting cells includes an N-type semiconductor layer and a P-type semiconductor layer, and the N-type semiconductor layer of one light emitting cell is electrically connected to the P-type semiconductor layer of another adjacent light emitting cell. Further, the present invention provides a light emitting device including a light emitting element with a plurality of light emitting cells connected in series.

Abstract: A semiconductor light emitting device including an active layer, a compound semiconductor layer on the active layer, a contact layer on the compound semiconductor layer, and an electrode on the contact layer, where the contact layer is substantially the same size as the electrode.

Abstract: Overmolded lenses and certain fabrication techniques are described for LED structures. In one embodiment, thin YAG phosphor plates are formed and affixed over blue LEDs mounted on a submount wafer. A clear lens is then molded over each LED structure during a single molding process. The LEDs are then separated from the wafer. The molded lens may include red phosphor to generate a warmer white light. In another embodiment, the phosphor plates are first temporarily mounted on a backplate, and a lens containing a red phosphor is molded over the phosphor plates. The plates with overmolded lenses are removed from the backplate and affixed to the top of an energizing LED. A clear lens is then molded over each LED structure. The shape of the molded phosphor-loaded lenses may be designed to improve the color vs. angle uniformity. Multiple dies may be encapsulated by a single lens. In another embodiment, a prefabricated collimating lens is glued to the flat top of an overmolded lens.

Abstract: An electrode for use in an organic optoelectronic device is provided. The electrode includes a thin film of single-wall carbon nanotubes. The film may be deposited on a substrate of the device by using an elastomeric stamp. The film may be enhanced by spin-coating a smoothing layer on the film and/or doping the film to enhance conductivity. Electrodes according to the present invention may have conductivities, transparencies, and other features comparable to other materials typically used as electrodes in optoelectronic devices.

Abstract: Provided is a solution for narrowing of a light emitting region, increasing of leak current at an edge of a functional layer, peeling of the functional layer, or the like caused by non-uniform thickness of the functional layer at the edges thereof. Provided is an electronic device comprising a substrate; a conductive functional layer formed on the substrate; and an edge covering layer that covers edges of the functional layer, wherein the functional layer includes a functional region that is not covered by the edge covering layer. This functional layer may include a non-functional region that is made non-functional by covering the functional layer with the edge covering layer. The edge covering layer may be adhered to the substrate by an adhesion force that is greater than an adhesion force between the substrate and the functional layer.

Abstract: A method of manufacturing a semiconductor device includes forming a diffusion barrier layer on a substrate, and forming at least two features on the substrate such that the diffusion barrier layer is respectively disposed between each feature and the substrate and contacts the at least two features. A first impurity region of the substrate contains impurities of a first type, a second impurity region of the substrate contains impurities of a second type, different from the first type, a first feature of the at least two features is in the first impurity region, and a second feature of the at least two features is in the second impurity region, such that the second feature is electrically isolated from first feature by the different impurity regions.

Abstract: The disclosure provides a light-emitting device comprising a light-emitting epitaxy structure. The light-emitting epitaxy structure has a modulus of a critical reverse voltage not less than 50 volts while the light-emitting epitaxy structure is reverse-biased at a current density of ?10 ?A/mm2, and has a luminous efficiency not less than 50 lumen/Watt while the light-emitting epitaxy structure is forward-biased at a current density of 150 mA/mm2. Another aspect of the present disclosure provides a manufacturing method for a light-emitting device.

Abstract: Methods for fabricating light-emitting diode (LED) array structures comprising multiple vertical LED stacks coupled to a single metal substrate is provided. The LED array structure may comprise two, three, four, or more LED stacks arranged in any configuration. Each of the LED stacks may have an individual external connection to make a common anode array since the p-doped regions of the LED stacks are all coupled to the metal substrate, or some to all of the n-doped regions of the LED stacks may be electrically connected to create a parallel LED array. Such LED arrays may offer better heat conduction and improved matching of LED characteristics (e.g., forward voltage and emission wavelength) between the individual LED stacks compared to conventional LED arrays.

Abstract: A lens forming method according to the present invention for forming lenses capable of focusing light on a plurality of respective photoelectric conversion sections constituting of a semiconductor apparatus is described. The method includes a lens forming step of processing a lens forming material, in which an average gradient of a ? curve indicating a residual film thickness with respect to the amount of irradiation light is between ?15 and ?0.8 nm·cm2/mJ within the range of a residual film ratio of 10 to 50% or within the range of the amount of irradiation light of 55 to 137 mJ/cm2 into a lens surface shape, using a photomask with an optical transmittance that is varied according to a lens surface shape, as an exposure mask.

Abstract: Embodiments of a transistor capable of outputting uniform driving current despite deviations in manufacturing processes, and an organic light emitting diode display (OLED) capable of displaying high picture quality by employing the transistor are disclosed. The transistor comprises a semiconductor layer formed on a substrate and including a source connected to a source electrode through first and second contacts, a drain connected to a drain electrode through third and fourth contacts, a channel formed between the source and the drain. The transistor further comprises a gate aligned with the channel with a gate insulating layer interposed between the gate and the channel. The first to fourth contacts are formed along different parallel axes which are perpendicular to a direction along which a laser beam proceeds during transistor manufacture.

Abstract: The present invention provides an addressable or static electronic apparatus, such as a light emitting display or a power generating apparatus. An exemplary apparatus comprises a substrate having a plurality of cavities; a plurality of first conductors coupled to the substrate and at least partially within the cavities, with the plurality of first conductors having a first and substantially parallel orientation; a plurality of light emitting diodes, photovoltaic diodes or other electronic components coupled to the plurality of first conductors and having a second orientation substantially normal to the first orientation; and a plurality of substantially optically transmissive second conductors coupled to the plurality of diodes and having a third orientation substantially normal to the second orientation and substantially perpendicular to the first orientation.

Abstract: A light-emitting device (100), comprising a plurality of light emitting diodes (107) arranged spaced apart from each other on a substrate (108), is provided. The device further comprises a light guide plate (101) having a front surface (102) and an opposing back surface (103) that is provided with an array of protrusions (104) extending towards said substrate. The light guide plate is arranged such that light-emitting diodes emits light towards light receiving faces (105) of the protrusions (104). Further, collimators (110) are arranged between the light emitting diodes and the light receiving faces, to collimate the light before it enters the light guide plate. The light from the plurality of LEDs will be transmitted in to the light guide plate and will be distributed therein before exiting the light guide plate via the front side thereof. Thus, the present invention provides a light-emitting device that provides well-distributed and collimated light from a plurality of point light sources.

Abstract: The present invention provides a display device capable of suppressing deterioration of characteristics of a display element even when a resin is used as a material for a substrate. A display device of the present invention comprises: a resin substrate; and an organic insulating film, an inorganic conductive film, and a display element, formed on the resin substrate in this order, wherein the display device comprises an inorganic insulating film arranged adjacent to the inorganic conductive film, the inorganic insulating film and the inorganic conductive film covering the entire surface of the organic insulating film.

Abstract: Provided are a light emitting device and a method of fabricating the same. The light emitting device comprises a first conductive type substrate, first to fourth metal electrodes, and a light emitting diode. The first conductive type substrate comprises P-N junction first to fourth diodes. The first metal electrode is connected to the first diode and the fourth diode. The second metal electrode is connected to the third diode and the second diode. The third metal electrode is connected to the first diode and the third diode. The fourth metal electrode is connected to the second diode and the fourth diode. The light emitting diode is electrically connected to the third metal electrode and the fourth metal electrode.

Abstract: Disclosed is a light emitting device having vertically stacked light emitting diodes. It comprises a lower semiconductor layer of a first conductive type positioned on a substrate, a semiconductor layer of a second conductive type on the lower semiconductor layer of a first conductive type, and an upper semiconductor layer of a first conductive type on the semiconductor layer of a second conductive type. Furthermore, a lower active layer is interposed between the lower semiconductor layer of a first conductive type and the semiconductor layer of a second conductive type, and an upper active layer is interposed between the semiconductor layer of a second conductive type and the upper semiconductor layer of a first conductive type. Accordingly, there is provided a light emitting device having a structure in which a lower light emitting diode comprising the lower active layer and an upper light emitting diode comprising the upper active layer are vertically stacked.

Abstract: The present invention discloses an light emitting diode (LED) light source and an interface for providing power to the LED. The LED light source includes an LED unit and a second coupling unit. The LED unit includes a base, one or more LED, and a first coupling unit. The LED are attached to the base. The joining of the first and second coupling units provides a mechanical support and electricity to the LED. The LED, are connected with independent circuit loops and controlled by controller to change the brightness of the LED. This structure allows the second coupling unit to be applied to any luminaries or replacement of a traditional light source, thus making the LED unit a universal LED light source for mass production and cost reduction. With the use of various types of LED and electric current control, modulation of brightness, color, and color temperature may be achieved.

Abstract: The present invention provides light-emitting diode (LED) devices comprises compositions and containers of hermetically sealed luminescent nanocrystals. The present invention also provides displays comprising the LED devices. Suitably, the LED devices are white light LED devices.

Abstract: A thin film transistor (TFT) structure is implemented. This embodiment is much less sensitive than conventional TFTs to alignment errors and substrate distortion. In such a configuration, there is no need to define gate features, so the layout is simplified. Moreover, the gate layer may be patterned by several inexpensive printing or non-printing methods.

Abstract: A method for manufacturing a semiconductor device having a compound semiconductor layer that is provided on a substrate and includes a cladding layer of a first conductivity type, an activation layer, a cladding layer of a second conductivity type that is the opposite of the first conductivity type, includes the steps of: forming a diffusion source layer on the compound semiconductor layer; forming a first diffusion region in the compound semiconductor layer by carrying out a first heat treatment, so that the first diffusion region includes a light emitting facet for emitting light from the activation layer; removing the diffusion source layer; forming a first SiN film having a refractive index of 1.9 or higher on the compound semiconductor layer; and turning the first diffusion region into the second diffusion region by carrying out a second heat treatment.

Abstract: A method includes arranging a bonding layer of a predetermined thickness on at least one of a first functional region bonded on a release layer, which is capable of falling into a releasable condition when subjected to a process, on a first substrate, and a region, to which the first functional region is to be transferred, on a second substrate; bonding the first functional region to the second substrate through the bonding layer; and separating the first substrate from the first functional region at the release layer.

Abstract: A light output device comprises a substrate arrangement comprising first and second light transmissive substrates (1,2) and an electrode arrangement (3a,3b) sandwiched between the substrates. A plurality of light source devices (4) are integrated into the structure of the substrate arrangement and connected to the electrode arrangement. The electrode arrangement comprises an at least semi-transparent conductor arrangement of spaced non-transparent wires, the wires comprising a conductive ink.

Abstract: A semiconductor device includes a substrate, a semiconductor layer formed on the substrate, and an optically functional portion formed by using at least a portion of the semiconductor layer. The optically functional portion performs light emission or light reception. The semiconductor device further includes a first driving electrode that is electrically connected to a semiconductor layer on a surface of the optically functional portion, and the first driving electrode drives the optically functional portion. The semiconductor device further includes an encapsulating electrode that is formed on the semiconductor layer to surround periphery of the optically functional portion, and electrically connected to the first driving electrode.

Abstract: A light-emitting semiconductor component which contains a sequence of semiconductor layers (2) with an area of p-doped semiconductor layers (4) and n-doped semiconductor layers (3) between which a first pn junction (5a, 5b) is formed. The pn junction (5a, 5b) is subdivided into a light-emitting section (7) and a protective-diode section (8) in a lateral direction by means of an insulating section (6). An n-doped layer (9), which forms a second pn junction (10) which acts as a protective diode along with the p-doped area (4), is applied to the p-doped area (4) in the area of the protective-diode section (8), the first pn junction (5b) in the protective-diode section (8) having a larger area than the first pn junction (5a) in the light-emitting section (7). The protective-diode section (8) protects the light-emitting semiconductor component from voltage pulses due to electrostatic discharges (ESD).

Abstract: The present invention relates to a light emitting device and a method of manufacturing the light emitting device. According to the present invention, the light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane.

Abstract: A TFT array panel and a method for fabricating the same is disclosed, wherein an adhesion force between an elongated wire and a TFT array panel pad is improved by increasing the contact area of a bonding pad. The TFT array panel pad includes a first conductive layer formed in a pad region on an insulating substrate. The first conductive layer includes a plurality of conductive islands and holes. A second conductive layer is formed over and covers the first conductive layer.

Abstract: A method of forming a light-emitting diode (LED) device and separating the LED device from a growth substrate is provided. The LED device is formed by forming an LED structure over a growth substrate. The method includes forming and patterning a mask layer on the growth substrate. A first contact layer is formed over the patterned mask layer with an air bridge between the first contact layer and the patterned mask layer. The first contact layer may be a contact layer of the LED structure. After the formation of the LED structure, the growth substrate is detached from the LED structure along the air bridge.

Abstract: Materials can be prepared in a layer-by-layer fashion on a patterned first substrate and subsequently transferred to a second substrate. The transfer step can preserve the pattern of the first substrate, such that the second substrate will bear a pattern of the transferred material. The material can be an electrostatic multilayer including a light absorbing dye, such as a J-aggregating cyanine dye.

Abstract: An integrated circuit and method are provided for preventing reverse engineering by monitoring light emissions emitted from transistors and such electrically active devices in the integrated circuit. The method prevents, in an integrated circuit, a pattern of light emitted from at least one active device in the integrated circuit from being detected external to the integrated circuit by reduction of the intensity of light emitted from the at least one active device in the integrated circuit thereby preventing the reduced intensity light emitted from the at least one active device in the integrated circuit from being detected external to the integrated circuit. The intensity of light emitted from the at least one active device in the integrated circuit can be reduced by modification of operational characteristics of the at least one active device during switching transitions.

Abstract: An integrated circuit and method are provided for preventing reverse engineering by monitoring light emissions emitted from transistors and such electrically active devices in the integrated circuit. The method prevents, in an integrated circuit, a pattern of light emitted from at least one active device in the integrated circuit from being detected external to the integrated circuit by fading the light emitted from the at least one active device in the integrated circuit and that is emitted external to the integrated circuit. Bright light emission emitted in substantial close proximity to the at least one active device in the integrated circuit, and emitted external to the integrated circuit, fades a pattern of light emission emitted from the at least one active device.

Abstract: A package for a photoelectric wiring in which a pair of light emitting and receiving devices are mounted as optical devices on a lead frame having an optical waveguide in which an optical waveguide having a plurality of core portions disposed in parallel and surrounded by a cladding is mounted on a support plate of a lead frame having a mirror section including the support plate for supporting the optical waveguide, mirror sections having a mirror surface portion formed by bending both edges of the support plate at an angle of 45 degrees with respect to a planar direction of the support plate in a side direction, and lead portions to be electrically connected to the optical devices, the support plate, the mirror sections and the lead sections being formed by pressing a metallic material, wherein the light emitting device and the light receiving device are mounted in alignment with an optical path of a light reflected by the mirror surface portion and transmitted through the core portions at one of sides and t

Abstract: A lighting apparatus for emitting polarized white light, which includes at least a first light source for emitting primary light comprised of one or more first wavelengths and having a first polarization direction; and at least a second light source for emitting secondary light in the first polarization direction, comprised of one or more secondary wavelengths, wherein the first light and the secondary light are combined to produce a polarized white light. The lighting apparatus may further comprise a polarizer for controlling the primary light's intensity, wherein a rotation of the polarizer varies an alignment of its polarization axis with respect to the first polarization direction, which varies transmission of the primary light through the polarizer, which controls a color co-ordinate or hue of the white light.

Abstract: A wafer-level electro-optical semiconductor fabrication mechanism and method for the same which improves upon traditional electro-optical semiconductor grain packaging methods. The present invention electrically connects semiconductor grains to the grains on a top surface of a wafer, this is done by either screen-printing or steel board-printing solder or silver paste onto the wafer. After that, the wafer is processed using the following steps: processing the devices, bonding with wire, packaging the wafer and finally cutting the wafer. Using this method raises the production yield while production times and costs are reduced. The wafer-level electro-optical semiconductor fabrication mechanism comprises: a wafer, an electro-optical semiconductor grain and conductive materials.

Abstract: A flat panel display that can prevent a voltage drop of a driving power and, at the same time, minimizes the characteristic reduction of electronic devices located in a circuit region where various circuit devices are located includes: a substrate; an insulating film arranged on the substrate; a pixel region including at least one light emitting diode, the pixel region arranged on the insulating film and adapted to display an image; a circuit region arranged on the insulating film and including electronic devices adapted to control signals supplied to the pixel region; and a conductive film interposed between the substrate and the insulating film in a region corresponding to the pixel region and electrically connected to one electrode of the light emitting diode.

Abstract: There is provided a light emitting diode operating under AC power comprising a substrate; a buffer layer formed on the substrate; and a plurality of light emitting cells formed on the buffer layer to have different sizes and to be electrically isolated from one another, the plurality of light emitting cells being connected in series through metal wires. According to the present invention, light emitting cells formed in an LED have different sizes, and thus have different turn-on voltages when light is emitted under AC power, so that times when the respective light emitting cells start emitting light are different to thereby effectively reduce a flicker phenomenon.

Abstract: An illumination assembly is provided which is capable of correcting a color temperature. The assembly generally comprises a substrate and a light emitting device mounted on the substrate that further comprises a light emitting element and a resin containing a phosphor excitable by light emitted from the light emitting element. A reflectance factor of the substrate may be set corresponding to light emitted from the light emitting device, such that the light emitted by the light emitting device complies with a desired light emission for the illumination assembly. A translucent filling resin or translucent coating resin may further be applied on the light emitting device and the substrate, the translucent resin having a refractive index and correspondingly operable to suppress variations in color temperature.

Abstract: A structural configuration of a failsafe OLED chain with multiple OLED lighting components in series connection is described. During the manufacture of the lighting component a weak spot is specifically installed at an appropriate location of the structure in the form of a break-through layer, which in the event of a failure of the lighting component breaks down and bypasses the component with a bypass layer.