Abstract: A display substrate includes a substrate, a pixel part, a pad part and a sacrificial electrode. The substrate includes a display area and a peripheral area. The pixel part is on the display area and includes a switching element, and a pixel electrode electrically connected to the switching element. The pad part is on the peripheral area and contacts a terminal of an external device. The pad part includes a pad electrode a contact electrode. The pad electrode includes a first metal layer, and a second metal layer on the first metal layer, and the contact electrode contacts the second metal layer. The sacrificial electrode is spaced apart from the pad electrode and contacts the contact electrode. An exposed portion of the sacrificial electrode is exposed to an external side of the display substrate.

Abstract: An organic electroluminescent element according to the present invention includes: an anode (3); a cathode (4); and an organic light-emitting layer (7) sandwiched between the anode (3) and the cathode (4), the organic light-emitting layer (7) including a hole transporting light-emitting layer (5) and an electron transporting light-emitting layer (6), the hole transporting light-emitting layer (5) being located closer to the anode (3) than the electron transporting light-emitting layer (6), containing a hole transporting material, and including an acceptor region doped with an acceptor and a first light-emitting dopant region doped with a first light-emitting dopant, the acceptor region being located on that side of the hole transporting light-emitting layer (5) which faces the anode (3), and the first light-emitting dopant region being located on that side of the hole transporting light-emitting layer (5) which faces the cathode (4), the electron transporting light-emitting layer (6) being located closer to t

Abstract: The disclosed light emitting device comprises at least one first light emitting element including at least one light emitting chip for emitting light having a wavelength of 400 to 500 nm and a phosphor; and at least one second light emitting element disposed adjacent to the first light emitting element to emit light having a wavelength of 560 to 880 nm.

Abstract: Disclosed is a light emitting device employing non-stoichiometric tetragonal Alkaline Earth Silicate phosphors. The light emitting device comprises a light emitting diode emitting light of ultraviolet or visible light, and non-stoichiometric luminescent material disposed around the light emitting diode. The luminescent material adsorbs at least a portion of the light emitted from the light emitting diode and emits light having a different wavelength from the absorbed light. The non-stoichiometric luminescent material has tetragonal crystal structure, and contains more silicon in the crystal lattice than that in the crystal lattice of silicate phosphors having stoichiometric crystal structure. The luminescent material is represented as the formula (BauSrvCawCux)3-y(Zn,Mg,Mn)zSi1+bO5+2b:Eua. Light emitting devices having improved temperature and humidity stability can be provided by employing the non-stoichiometric tetragonal Alkaline Earth Silicate phosphors.

Abstract: According to one embodiment, an LED package includes a first, a second, and a third lead frame separated from one another. The LED package includes a first LED chip of a top surface terminal type having one terminal connected to the second lead frame, and having one other terminal connected to the third lead frame, the first LED chip is mounted on the first lead frame. The LED package includes a first protection chip of a top surface terminal type having one terminal connected to the second lead frame, and having one other terminal connected to the third lead frame, the first protection chip is mounted on the first lead frame. And, a resin body covers a part of the first, second and third lead frames, the first LED chip, and the first protection chip, An outer shape of the resin body forms an outer shape of the LED package.

Abstract: A semiconductor device with high function, multifunction and high added value. The semiconductor device includes a PLL circuit that is provided over a substrate and outputs a signal with a correct frequency. By providing such a PLL circuit over the substrate, a semiconductor device with high function, multifunction and high added value can be achieved.

Abstract: According to one embodiment, an LED package includes a first and a second lead frame separated from each other, an LED chip, a wire and a resin body. The LED chip is provided above the first and second lead frames, and has a pair of terminals provided on an upper surface of the LED chip. One of the terminals is connected to the first lead frame and one other terminal is connected to the second lead frame. The wire is drawn out from the one terminal horizontally to connect the one terminal to the first lead frame. The resin body covers the LED chip and the wire, an upper surface, a part of a lower surface and a part of an end surface of each of the first and second lead frames to expose a remaining part of the lower surface and a remaining part of the lower surface.

Abstract: An LED package and a lead frame include a reflector cup having a bottom surface with an LED asymmetrically positioned on the bottom surface and a wall surface inclined relative to the bottom surface and defining an opening at an upper end thereof. The bottom surface of the reflector cup has a first axial dimension along a first axis and a second axial dimension along a second axis, orthogonal to the first axis. A display having an asymmetrical FFP and asymmetrical screen curve includes an array of the LED modules including a plurality of LED packages. At least some of the LED packages include a dome-shaped lens asymmetrically positioned with respect to a geometric center of the bottom surface of the reflector cup.

Abstract: A semiconductor device having light-emitting diodes (LEDs) formed on a concave textured substrate is provided. A substrate is patterned and etched to form recesses. A separation layer is formed along the bottom of the recesses. An LED structure is formed along the sidewalls and, optionally, along the surface of the substrate between adjacent recesses. In these embodiments, the surface area of the LED structure is increased as compared to a planar surface. In another embodiment, the LED structure is formed within the recesses such that the bottom contact layer is non-conformal to the topology of the recesses. In these embodiments, the recesses in a silicon substrate result in a cubic structure in the bottom contact layer, such as an n-GaN layer, which has a non-polar characteristic and exhibits higher external quantum efficiency.

Abstract: An active device array substrate is provided. First, a substrate having a display area and a sensing area is provided. Then, a first patterned conductor layer is disposed on the display area of the substrate. A gate insulator is disposed on the substrate. A patterned semiconductor layer, a second patterned conductor layer and a patterned photosensitive dielectric layer are disposed on the gate insulator, wherein the second patterned conductor layer includes a source electrode, a drain electrode and a lower electrode, the patterned photosensitive dielectric layer covering the second patterned conductor layer includes an interface protection layer disposed on the source electrode and the drain electrode and a photo-sensing layer disposed on the lower electrode. A passivation layer is then disposed on the substrate. After that, a third patterned conductor layer including a pixel electrode and an upper electrode is disposed on the passivation layer.

Abstract: A display device for increasing brightness of an image generation, including a color cluster system, is provided. The system includes a first color LED cluster having at least a first LED of a first wavelength within a first color range and a second LED of a second different wavelength within the first color range. The light from the first LED may be combined at least partially with light from the second LED The system further comprises a second color LED cluster having at least a first LED of a first wavelength within a second color range and a second LED of a second different wavelength within the second color range. In the second color LED cluster, the light from the first LED may be combined at least partially with light from the second LED.

Abstract: A manufacturing method of a color filter substrate, a semi-transmissive LCD using the same, and a manufacturing method thereof are disclosed. In one embodiment, the manufacturing method of the color filter substrate includes preparing a first substrate which comprises a reflection region and a transmission region. Then, a color resist on the first substrate is formed. A mask, including a semi-transmission mask corresponding to the reflection region, is provided on the color resist. An exposure process is provided for the color resist with the mask to form a color filter layer on the first substrate. The color filter layer is formed by removing a portion of the color resist of the reflection region.

Abstract: The present invention is characterized in that a transistor with its L/W set to 10 or larger is employed, and that |VDS| of the transistor is set equal to or larger than 1 V and equal to or less than |VGS?Vth|. The transistor is used as a resistor so that the resistance of a light emitting element can be held by the transistor. This slows down an increase in internal resistance of the light emitting element and the resultant current value reduction. Accordingly, a change with time in light emission luminance is reduced and the reliability is improved.

Abstract: An optical semiconductor device has a semiconductor substrate, an optical semiconductor region and a heater. The optical semiconductor region is provided on the semiconductor substrate and has a width smaller than that of the semiconductor substrate. The heater is provided on the optical semiconductor region. The optical semiconductor region has a cladding region, an optical waveguide layer and a low thermal conductivity layer. The optical waveguide layer is provided in the cladding region and has a refractive index higher than that of the cladding region. The low thermal conductivity layer is provided between the optical waveguide layer and the semiconductor substrate and has a thermal conductivity lower than that of the cladding region.

Abstract: A multichip package structure includes a substrate unit, a light-emitting unit, a current-limiting unit, a frame unit and a package unit. The substrate unit includes a first chip-placing region and a second chip-placing region. The light-emitting unit includes a plurality of light-emitting chips electrically connected to the first chip-placing region. The current-limiting unit includes at least one current-limiting chip electrically connected to the second chip-placing region and the light-emitting unit. The frame unit includes a first annular colloid frame surrounding the light-emitting chips and a second annular colloid frame surrounding the current-limiting chip. The package unit includes a first package colloid body surrounded by the first annular colloid frame to cover the light-emitting chips and a second package colloid body surrounded by the second annular colloid frame to cover the current-limiting chip.

Abstract: A method of fabricating a light emitting diode array, comprising: providing a temporary substrate; forming a first light emitting stack and a second light emitting stack on the temporary substrate; forming a first insulating layer covering partial of the first light emitting stack; forming a wire on the first insulating layer and electrically connecting to the first light emitting stack and the second light emitting stack; forming a second insulating layer fully covering the first light emitting stack, the wire and partial of the second light emitting stack; forming a metal connecting layer on the second insulating layer and electrically connecting to the second light emitting stack; forming a conductive substrate on the metal connecting layer; removing the temporary substrate; and forming a first electrode connecting to the first light emitting stack.

Abstract: Disclosed is a light emitting diode (LED) package having an array of light emitting cells coupled in series. The LED package comprises a package body and an LED chip mounted on the package body. The LED chip has an array of light emitting cells coupled in series. Since the LED chip having the array of light emitting cells coupled in series is mounted on the LED package, it can be driven directly using an AC power source.

Abstract: The present invention discloses an light emitting diode (LED) light source and an interface for providing power to the LED. The LED light source includes an LED unit and a second coupling unit. The LED unit includes a base, one or more LED, and a first coupling unit. The LED are attached to the base. The joining of the first and second coupling units provides a mechanical support and electricity to the LED. The LED, are connected with independent circuit loops and controlled by controller to change the brightness of the LED. This structure allows the second coupling unit to be applied to any luminaries or replacement of a traditional light source, thus making the LED unit a universal LED light source for mass production and cost reduction. With the use of various types of LED and electric current control, modulation of brightness, color, and color temperature may be achieved.

Abstract: Pixel electrodes having reflectivity are arranged at a predetermined pitch in a matrix form on an effective display region on an opposed surface of an element substrate. A first conductive pattern which is formed by the same layer as the pixel electrodes is provided on an ineffective display region which is at an outer side with respect to the effective display region and at an inner side with respect to a sealing region when seen from the above. A second conductive pattern which is formed by the same layer as the pixel electrodes is provided on the sealing region. An area density of the second conductive pattern is smaller than an area density of the first conductive pattern when seen from the above.

Abstract: Disclosed herein is a light-emitting device including a plurality of first light-emitting elements mounted in a matrix form on a common wiring board. Each of the first light-emitting elements has a single crystal semiconductor multilayer structure and is a semiconductor element in the form of a chip that emits light in a given band of wavelengths. When attention is focused on the plurality of first light-emitting elements that belong in a given area of all the plurality of first light-emitting elements, the orientations of the common crystal axes of the first light-emitting elements adjacent to each other at least in one of the row and column directions differ.

Abstract: A non-volatile electronic display includes a light valve plate comprising a plurality of liquid crystal cells on a transparent substrate; a plurality of “floating/storage” nodes functioning like non-volatile memories formed on the transparent substrate and corresponding to the liquid crystal cells, and a plurality of word lines and a plurality of bit lines connected to the plurality of non-volatile memories and supplying signal to store charge to at least one non-volatile memory. The charge is retained in the at least one “floating/storage” nodes functioning like non-volatile memory for a predetermined period when no external power is applied to the non-volatile electronic display.

Abstract: An LED module includes a plurality of lighting sources each including a substrate, a first and second lead frames arranged on the substrate, an LED chip electrically connected to the first and the second lead frames, and an encapsulation covering the LED chip. The first lead frame of each of the lighting sources connects with the second lead frame of an adjacent lighting source electrically and mechanically.

Abstract: Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack.

Abstract: Disclosed is a light emitting device package, which is free from thermal degradation by preventing reactions between moisture and light or between moisture and heat. The light emitting device package includes a light emitting device, a package body supporting the light emitting device, an electrode provided on the package body and electrically connected to the light emitting device, a filler covering the light emitting device, and a protective layer formed on a surface of the package body at which light and/or heat generated by the light emitting device arrives.

Abstract: A first transistor, a second transistor, a third transistor, a fourth transistor are provided. In the first transistor, a first terminal is electrically connected to a first wiring; a second terminal is electrically connected to a gate terminal of the second transistor; a gate terminal is electrically connected to a fifth wiring. In the second transistor, a first terminal is electrically connected to a third wiring; a second terminal is electrically connected to a sixth wiring. In the third transistor, a first terminal is electrically connected to a second wiring; a second terminal is electrically connected to the gate terminal of the second transistor; a gate terminal is electrically connected to a fourth wiring. In the fourth transistor, a first terminal is electrically connected to the second wiring; a second terminal is electrically connected to the sixth wiring; a gate terminal is connected to the fourth wiring.

Abstract: The present invention relates a transient voltage suppressor (TVS) for directional ESD protection. The TVS includes: a conductivity type substrate; a first type lightly doped region, having a first type heavily doped region arranged therein; a second type lightly doped region, having a second type heavily doped region and a third type heavily doped region arranged therein; a third type lightly doped region, having a fourth type heavily doped region arranged therein; a plurality of closed isolation trenches, arranged on the conductivity type substrate, wherein at least one of the plurality of closed isolation trenches is neighbored one of the type lightly doped regions; and a first pin. Accordingly, the TVS of present invention may adaptively provide effective ESD protection under positive and negative ESD stresses, improve the efficiency of ESD protection within the limited layout area.

Abstract: A light emitting diode (LED) package is provided. The LED package includes: a package body including an LED; a bottom heat transfer metal layer formed on the bottom of the package body; and a metal plate bonded to the bottom heat transfer metal layer, wherein the bottom heat transfer metal layer is bonded to the metal plate through soldering or an adhesive such as Ag epoxy, and the metal plate includes only metal without a resin layer.

Abstract: A light emitting diode (LED) package includes a substrate, a first LED chip and a second LED chip. The substrate includes first to fourth electrodes, and an interconnection electrode. A mounting area is defined at center of a top surface of the substrate. The first to fourth electrodes are respectively in four corners of the substrate out of the mounting area. The first interconnection electrode is embedded in the substrate to electrically connect the first and the third electrodes. The first LED chip and the second LED chip are arranged in the mounting area. Each LED chip includes an anode pad and a cathode pad. The first to fourth electrodes are respectively connected to the four pads of the first and the second LED chips via a plurality of metal wires, and no metal wire connection is formed between the first and the second LED chips.

Abstract: An active device array substrate including a substrate, a pixel array and a plurality of switching elements used for detection is provided. The substrate has a display area and a peripheral circuit area adjacent with each other. The pixel array is disposed in the display area. The switching elements are disposed in the peripheral circuit area. Each switching element includes a semiconductor layer, and a plurality of first and second electrode branches. The first and second electrode branches are disposed on the semiconductor layer. The first and second electrode branches form a plurality of first conductive channels in a first direction and a plurality of second conductive channels in a second direction via the semiconductor layer. A portion of the lengths of the first conductive channels are the same. A portion of the lengths of the second conductive channels are the same.

Abstract: Disclosed are a light emitting diode having a thermal conductive substrate and a method of fabricating the same. The light emitting diode includes a thermal conductive insulating substrate. A plurality of metal patterns are spaced apart from one another on the insulating substrate, and light emitting cells are located in regions on the respective metal patterns. Each of the light emitting cells includes a P-type semiconductor layer, an active layer and an N-type semiconductor layer. Meanwhile, metal wires electrically connect upper surfaces of the light emitting cells to adjacent metal patterns. Accordingly, since the light emitting cells are operated on the thermal conductive substrate, a heat dissipation property of the light emitting diode can be improved.

Abstract: An active device array substrate and a fabricating method thereof are provided. A first patterned conductive layer including separated scan line patterns is formed on a substrate. Each scan line pattern includes a first and second scan lines adjacent to each other. Both the first and the second scan lines have first and second contacts. An open inspection on the scan line patterns is performed. Channel layers are formed on the substrate. A second patterned conductive layer including data lines interlaced with the first and second scan lines, sources and drains located above the channel layers, and connectors is formed on the substrate. The sources electrically connect the data lines correspondingly. At least one of the connectors electrically connects the first and second scan lines, so as to form a loop in each scan line pattern. Pixel electrodes electrically connected to the drains are formed.

Abstract: A light-emitting device having the quality of an image high in homogeneity is provided. A printed wiring board (second substrate) (107) is provided facing a substrate (first substrate) (101) that has a luminous element (102) formed thereon. A PWB side wiring (second group of wirings) (110) on the printed wiring board (107) is electrically connected to element side wirings (first group of wirings) (103, 104) by anisotropic conductive films (105a, 105b). At this point, because a low resistant copper foil is used to form the PWB side wiring (110), a voltage drop of the element side wirings (103, 104) and a delay of a signal can be reduced. Accordingly, the homogeneity of the quality of an image is improved, and the operating speed of a driver circuit portion is enhanced.

Abstract: The present invention provides a light emitting device comprising a first light emitting portion that emits white light at a color temperature of 6000K or more and a second light emitting portion that emits white light at a color temperature of 3000K or less, which include light emitting diode chips and phosphors and are independently driven. The present invention has an advantage in that a light emitting device can be diversely applied in a desired atmosphere and use by realizing white light with different light spectrums and color temperatures. Particularly, the present invention has the effect on health by adjusting the wavelength of light or the color temperature according to the circadian rhythm of humans.

Abstract: Some embodiments provide a microdisplay integrated circuit (IC), a substantially transparent protective cover coupled to the microdisplay IC, and a base coupled to the microdisplay IC. Thermal expansion characteristics of the base may be substantially similar to thermal expansion characteristics of the protective cover. According to some embodiments, at least one set of imaging elements is fabricated on an upper surface of a semiconductor substrate, and a base is affixed to a lower surface of the semiconductor substrate to generate substantially negligible mechanical stress between the semiconductor substrate and the base.

Abstract: A thin film transistor, a method of manufacturing the thin film transistor, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; a gate insulating film formed on the gate electrode; an activation layer formed on the gate insulating film; a passivation layer including a compound semiconductor oxide, formed on the activation layer; and source and drain electrodes that contact the activation layer.

Abstract: A method of coating a light emitting device is provided. The method includes preparing a plurality of light emitting devices. The plurality of light emitting devices are coated with a first photocurable liquid. First light is selectively exposed to the first photocurable liquid to form a first coating layer on at least a partial region of a surface of each of the plurality of light emitting devices. The plurality of light emitting devices on which the first coating layer is formed are coated with a second photocurable liquid. Second light is selectively exposed to the second photocurable liquid to form a second coating layer on at least a partial region of the surface of each of the plurality of light emitting devices or a surface of the first coating layer. The first coating layer corresponds to the cured first photocurable liquid, while the second coating layer corresponds to the cured second photocurable liquid.

Abstract: The present invention relates to an LED packaging structure and packaging method. Said packaging structure includes a substrate, an LED chip, one or more convex walls and a colloid lens shaped by the restriction of the convex walls. Said convex walls are arranged on the substrate, at least one LED chip is arranged on the substrate within an area surrounded by the convex walls, and the colloid lens enclosing the LED chip is arranged within the area surrounded by the convex walls. The colloid lens is formed with desired colloid shape by placing a liquid colloid within the area confined by the convex walls and utilizing surface tension of the liquid, and is cured. Compared to prior art, the LED packaging structure of the present invention is simple and reasonable, with simple production process and lower costs.

Abstract: A thin film transistor substrate of a liquid crystal display panel and manufacturing method thereof are disclosed. The thin film transistor substrate of the liquid crystal display panel includes a substrate, a storage capacitor electrode, a first insulated layer, a gate electrode, a gate insulated layer, a patterned semiconductor layer, a source electrode, a drain electrode, a second insulated layer, and at least one pixel electrode. A part of the storage capacitor electrode overlaps a part of the pixel electrode to form a storage capacitor and the storage capacitor electrode includes a patterned transparent conducting layer and a patterned opaque conducting layer. Moreover, the patterned transparent conducting layer and the patterned opaque conducting layer are defined by a gray-tone mask, and an area of the patterned transparent conducting layer is larger than an area of the patterned opaque conducting layer to improve the aperture ratio.

Abstract: A first lighting device comprises at least one plural cavity element and a plurality of solid state light emitters. A second lighting device comprises at least one plural cavity element, a plurality of solid state light emitters and at least one encapsulant region, at least a portion of the plural cavity element being surrounded by the encapsulant region. Each plural cavity element has at least two optical cavities. Each optical cavity comprises a concave region in the plural cavity element. At least one solid state light emitter is present in each of at least two of the optical cavities.

Abstract: It is an object of the present invention to provide a semiconductor device, in particular, a light emitting element which can be easily manufactured with a wet method. One feature of the invention is a light emitting device including a transistor and a light emitting element. In the light emitting element, an organic layer, a light emitting layer, and a second electrode are sequentially formed over a first electrode, and the transistor is electrically connected to the light emitting element through a wiring. Here, the wiring contains aluminum, carbon, and titanium. The organic layer is formed by a wet method. The first electrode which is in contact with the organic layer is formed from indium tin oxide containing titanium oxide.

Abstract: A pixel array including a plurality of scan lines, data lines, and sub-pixels is provided. Each of the sub-pixels arranged in the nth row includes a first switch, a first pixel electrode, a second switch, a third switch, and a second pixel electrode. The first switch and the second switch are electrically connected to the nth scan line and the mth data line. The first switch and the first pixel electrode are electrically connected. The second switch has a first signal output terminal. The third switch is electrically connected to the (n+i)th scan line. The third switch has a signal input terminal electrically connected to the first signal output terminal and a second signal output terminal. The first signal output terminal is electrically insulated from the first pixel electrode and the second pixel electrode. The first signal output terminal extends to the underneath of the second pixel electrode.

Abstract: An integrated lighting apparatus includes at least a lighting device, a control device comprising an integrated circuit, and a connector that is used to electrically connect the lighting device and the control device. With the combination, the integrated circuit drives the lighting device in accordance with its various designed functionality, thus expands applications of the integrated lighting apparatus.

Abstract: A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.

Abstract: A light emitting device package capable of achieving an enhancement in light emission efficiency and a reduction in thermal resistance, and a method for manufacturing the same are disclosed. The method includes forming a mounting hole in a first substrate, forming through holes in a second substrate, forming a metal film in the through holes, forming at least one pair of metal layers on upper and lower surfaces of the second substrate such that the metal layers are electrically connected to the metal film, bonding the first substrate to the second substrate, and mounting at least one light emitting device in the mounting hole such that the light emitting device is electrically connected to the metal layers formed on the upper surface of the second substrate.

Abstract: Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.

Abstract: Disclosed are a light emitting device and a method of fabricating the same. The light emitting device includes a substrate; first and second light emitting cells, each including a first semiconductor layer, an active layer, and a second semiconductor layer; and a connector located between the first and second light emitting cells and the substrate, to electrically connect the first and second light emitting cells to each other. The connector extends from the second semiconductor layer of the first light emitting cell, across the substrate, and through central regions of the second semiconductor layer and active layer of the second light emitting cells, to contact the first semiconductor layer of the second light emitting cell.

Abstract: A thin film transistor substrate with an adhesive strength between a semiconductor layer and a source electrode, and between a semiconductor layer and a drain electrode; and an LCD device using the thin film transistor substrate. The thin film transistor substrate includes a substrate, a gate electrode on the substrate, a gate insulating film on the gate electrode, an active layer on the gate insulating film, an ohmic contact layer on the active layer, a barrier layer on the ohmic contact layer. The barrier layer is formed of a material layer containing Ge. A source electrode and a drain electrode are on the barrier layer. The source and drain electrodes are provided at a predetermined interval from each other.

Abstract: A pixel having an improved response time includes an organic light emitting diode connected between a first power supply and a second power supply; a first transistor connected between the first power supply and the organic light emitting diode, the first transistor including a gate electrode connected to a first node; a second transistor connected between a first electrode of the first transistor connected to the first power supply and a data line, the second transistor including a gate electrode connected to a current scanning line; a third transistor connected between a second electrode of the first transistor connected to the organic light emitting diode and the first node, the third transistor including a gate electrode connected to the current scanning line; a fourth transistor connected between the second electrode of the first transistor and the organic light emitting diode, the fourth transistor including a gate electrode connected to a light emitting control line; a fifth transistor connected betwee

Abstract: Exemplary embodiments of the present invention relate to light emitting devices including strontium oxyorthosilicate-type phosphors. The light emitting device includes a light emitting diode, which emits light in the UV or visible range, and phosphors disposed around the light emitting diode to absorb light emitted from the light emitting diode and emit light having a different wavelength from the absorbed light. The phosphors include an oxyorthosilicate phosphor having a general formula of Sr3-x-y-zCaxMIIySiO5: Euz with a calcium molar fraction in the range of 0<x?0.05.

Abstract: Disclosed is a light emitting device having vertically stacked light emitting diodes. It comprises a lower semiconductor layer of a first conductive type positioned on a substrate, a semiconductor layer of a second conductive type on the lower semiconductor layer of a first conductive type, and an upper semiconductor layer of a first conductive type on the semiconductor layer of a second conductive type. Furthermore, a lower active layer is interposed between the lower semiconductor layer of a first conductive type and the semiconductor layer of a second conductive type, and an upper active layer is interposed between the semiconductor layer of a second conductive type and the upper semiconductor layer of a first conductive type. Accordingly, there is provided a light emitting device having a structure in which a lower light emitting diode comprising the lower active layer and an upper light emitting diode comprising the upper active layer are vertically stacked.