Structural Or Functional Details (epo) Patents (Class 257/E27.151)
  • Patent number: 9859317
    Abstract: An optical apparatus including an optical functional layer having a high refractive index and a method of manufacturing the optical apparatus are provided. The optical functional layer includes a phase change material that has a first refractive index during heat treatment in a first temperature range and has a second refractive index, which is higher than the first refractive index, during heat treatment in a second temperature range that is higher than the first temperature range. The optical functional layer may be configured to have the second refractive index by using a micro-heater without having to be deposited at a high temperature.
    Type: Grant
    Filed: September 19, 2016
    Date of Patent: January 2, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Doyoon Kim, Ilhwan Kim
  • Patent number: 9812481
    Abstract: The present disclosure relates to a solid-state imaging device and a manufacturing method of the same, and an electronic apparatus, capable of more reliably suppressing occurrence of color mixing. A trench is formed between PDs so as to be opened to a light receiving surface side of a semiconductor substrate on which a plurality of the PDs, each of which receives light to generate charges, are formed, an insulating film is embedded in the trench and the insulating film is laminated on a back surface side of the semiconductor substrate. Then, a light shielding portion is formed so as to be laminated on the insulating film and to have a convex shape protruding to the semiconductor substrate at a location corresponding to the trench. The present technology can be applied to a back surface irradiation type CMOS solid-state imaging device.
    Type: Grant
    Filed: September 6, 2016
    Date of Patent: November 7, 2017
    Assignee: Sony Corporation
    Inventor: Yuki Miyanami
  • Patent number: 9503663
    Abstract: A solid-state imaging apparatus allows precise observation and analysis of ultra-high-speed phenomena at a frame rate more than 100 Mega frames per second, which has been targeted in advanced science and engineering. The solid-state imaging apparatus comprises pixels arranged in M columns and N rows. Each pixel includes a first layer for photoelectric conversion and a second layer having m charge collection devices, where m is equal to or greater than 3, for collecting and storing charges generated light incident on a substantially whole area of the pixel, and a readout device for reading out the charges, where m charge collection devices are locally placed in an area around a center of the pixel. The second layer further includes a second storage device for storing the charges collected and stored by each of the collection devices.
    Type: Grant
    Filed: August 25, 2014
    Date of Patent: November 22, 2016
    Inventor: Takeharu Etoh
  • Patent number: 9461085
    Abstract: The present disclosure relates to a solid-state imaging device and a manufacturing method of the same, and an electronic apparatus, capable of more reliably suppressing occurrence of color mixing. A trench is formed between PDs so as to be opened to a light receiving surface side of a semiconductor substrate on which a plurality of the PDs, each of which receives light to generate charges, are formed, an insulating film is embedded in the trench and the insulating film is laminated on a back surface side of the semiconductor substrate. Then, a light shielding portion is formed so as to be laminated on the insulating film and to have a convex shape protruding to the semiconductor substrate at a location corresponding to the trench. The present technology can be applied to a back surface irradiation type CMOS solid-state imaging device.
    Type: Grant
    Filed: March 30, 2016
    Date of Patent: October 4, 2016
    Assignee: Sony Corporation
    Inventor: Yuki Miyanami
  • Patent number: 9368532
    Abstract: The present disclosure relates to a solid-state imaging device and a manufacturing method of the same, and an electronic apparatus, capable of more reliably suppressing occurrence of color mixing. A trench is formed between PDs so as to be opened to a light receiving surface side of a semiconductor substrate on which a plurality of the PDs, each of which receives light to generate charges, are formed, an insulating film is embedded in the trench and the insulating film is laminated on a back surface side of the semiconductor substrate. Then, a light shielding portion is formed so as to be laminated on the insulating film and to have a convex shape protruding to the semiconductor substrate at a location corresponding to the trench. The present technology can be applied to a back surface irradiation type CMOS solid-state imaging device.
    Type: Grant
    Filed: September 24, 2015
    Date of Patent: June 14, 2016
    Assignee: Sony Corporation
    Inventor: Yuki Miyanami
  • Patent number: 9041132
    Abstract: A solid-state image pickup device includes a plurality of pixels, each of the pixels including a photoelectric conversion portion, a charge holding portion, a floating diffusion, and a transfer portion. The pixel also includes a beneath-holding-portion isolation layer and a pixel isolation layer. An end portion on a photoelectric conversion portion side of the pixel isolation layer is away from the photoelectric conversion portion compared to an end portion on a photoelectric conversion portion side of the beneath-holding-portion isolation layer, and an N-type semiconductor region constituting part of the photoelectric conversion portion is disposed under at least part of the beneath-holding-portion isolation layer.
    Type: Grant
    Filed: September 29, 2010
    Date of Patent: May 26, 2015
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Masahiro Kobayashi, Yuichiro Yamashita, Yusuke Onuki
  • Patent number: 9000492
    Abstract: In a back-illuminated solid-state image pickup device including a semiconductor substrate 4 having a light incident surface at a back surface side and a charge transfer electrode 2 disposed at a light detection surface at an opposite side of the semiconductor substrate 4 with respect to the light incident surface, the light detection surface has an uneven surface. By the light detection surface having the uneven surface, etaloning is suppressed because lights reflected by the uneven surface have scattered phase differences with respect to a phase of incident light and resulting interfering lights offset each other. A high quality image can thus be acquired by the back-illuminated solid-state image pickup device.
    Type: Grant
    Filed: March 24, 2010
    Date of Patent: April 7, 2015
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Hisanori Suzuki, Yasuhito Yoneta, Yasuhito Miyazaki, Masaharu Muramatsu, Koei Yamamoto
  • Patent number: 8927967
    Abstract: An electrochemically-gated field-effect transistor includes a source electrode, a drain electrode, a gate electrode, a transistor channel and an electrolyte. The transistor channel is located between the source electrode and the drain electrode. The electrolyte completely covers the transistor channel and has a one-dimensional nanostructure and a solid polymer-based electrolyte that is employed as the electrolyte.
    Type: Grant
    Filed: April 24, 2013
    Date of Patent: January 6, 2015
    Assignee: Karlsruhe Institute of Technology
    Inventors: Subho Dasgupta, Horst Hahn, Babak Nasr
  • Patent number: 8878264
    Abstract: A global shutter pixel cell includes a serially connected anti-blooming (AB) transistor, storage gate (SG) transistor and transfer (TX) transistor. The serially connected transistors are coupled between a voltage supply and a floating diffusion (FD) region. A terminal of a photodiode (PD) is connected between respective terminals of the AB and the SG transistors; and a terminal of a storage node (SN) diode is connected between respective terminals of the SG and the TX transistors. A portion of the PD region is extended under the SN region, so that the PD region shields the SN region from stray photons. Furthermore, a metallic layer, disposed above the SN region, is extended downwardly toward the SN region, so that the metallic layer shields the SN region from stray photons. Moreover, a top surface of the metallic layer is coated with an anti-reflective layer.
    Type: Grant
    Filed: June 30, 2011
    Date of Patent: November 4, 2014
    Assignee: Aptina Imaging Corporation
    Inventors: Sergey Velichko, Jingyi Bai
  • Patent number: 8847343
    Abstract: An oxide film capable of suppressing reflection of a lens is formed under a low temperature. A method of manufacturing a semiconductor device includes: (a) forming a lower layer oxide film on a lens formed on a substrate using a first processing source containing a first element, a second processing source containing a second element, an oxidizing source and a catalyst, the lower layer oxide film having a refractive index greater than that of air and less than that of the lens; and (b) forming an upper layer oxide film on the lower layer oxide film using the first processing source, the oxidizing source and the catalyst, the upper layer oxide film having a refractive index greater than that of the air and less than that of the lower layer oxide film.
    Type: Grant
    Filed: November 10, 2011
    Date of Patent: September 30, 2014
    Assignee: Hitachi Kokusai Electric, Inc.
    Inventors: Norikazu Mizuno, Tomohide Kato, Takaaki Noda
  • Patent number: 8735952
    Abstract: A solid-state imaging device is provided. The solid-state imaging device includes an imaging region having a plurality of pixels arranged on a semiconductor substrate, in which each of the pixels includes a photoelectric converting portion and a charge converting portion for converting a charge generated by photoelectric conversion into a pixel signal and blooming is suppressed by controlling a substrate voltage of the semiconductor substrate.
    Type: Grant
    Filed: July 17, 2007
    Date of Patent: May 27, 2014
    Assignee: Sony Corporation
    Inventors: Maki Sato, Yoshiharu Kudoh
  • Patent number: 8723232
    Abstract: A solid-state imaging apparatus, controlling a potential on a semiconductor substrate for an electronic shutter operation, includes: a first semiconductor region of the first conductivity type for forming a photoelectric conversion region; a second semiconductor region of the first conductivity type, formed separately from the photoelectric conversion region, for accumulating carriers; a third semiconductor region of a second conductivity type arranged under the second semiconductor region, for operating as a potential barrier; a fourth semiconductor region of the second conductivity type extending between the first semiconductor region and the semiconductor substrate, and between the third semiconductor region and the semiconductor substrate; and a first voltage supply portion for supplying a voltage to the third semiconductor region; wherein the first voltage supply portion includes a fifth semiconductor region of the second conductivity type arranged in the pixel region, and a first electrode connected to
    Type: Grant
    Filed: December 14, 2012
    Date of Patent: May 13, 2014
    Assignee: Canon Kabushiki Kaisha
    Inventors: Masahiro Kobayashi, Yuichiro Yamashita
  • Patent number: 8716761
    Abstract: An image sensor for a semiconductor light-sensitive device including a semiconductor substrate and a light receiving device configured to receive light and generate a signal from the light. The image sensor may include an electron collecting device formed in the semiconductor substrate to receive at least a portion of the electrons generated by the light in the light receiving device. The image sensor may include a first type device isolation film configured to isolate the light receiving device from the electron collecting device. The image sensor may include a shielding film formed over the semiconductor substrate and configured to shield the first electron collecting device from the light.
    Type: Grant
    Filed: July 12, 2012
    Date of Patent: May 6, 2014
    Assignee: Dongbu HiTek Co., Ltd.
    Inventor: Hoon Jang
  • Patent number: 8669599
    Abstract: A unit pixel of an image sensor and a photo detector are disclosed. The photo detector of the present invention configured to absorb light can include: a light-absorbing part configured to absorb light by being formed in a floated structure; an oxide film being in contact with one surface of the light-absorbing part; a source being in contact with one side of the other surface of the oxide film and separated from the light-absorbing part with the oxide film therebetween; a drain facing the source so as to be in contact with the other side of the other surface of the oxide film and separated from the light-absorbing part with the oxide film therebetween; and a channel interposed between the source and the drain and configured to form flow of an electric current between the source and the drain.
    Type: Grant
    Filed: September 25, 2013
    Date of Patent: March 11, 2014
    Inventor: Hoon Kim
  • Patent number: 8669598
    Abstract: A unit pixel of an image sensor and a photo detector are disclosed. The photo detector of the present invention configured to absorb light can include: a light-absorbing part configured to absorb light by being formed in a floated structure; an oxide film being in contact with one surface of the light-absorbing part; a source being in contact with one side of the other surface of the oxide film and separated from the light-absorbing part with the oxide film therebetween; a drain facing the source so as to be in contact with the other side of the other surface of the oxide film and separated from the light-absorbing part with the oxide film therebetween; and a channel interposed between the source and the drain and configured to form flow of an electric current between the source and the drain.
    Type: Grant
    Filed: September 25, 2013
    Date of Patent: March 11, 2014
    Inventor: Hoon Kim
  • Patent number: 8569806
    Abstract: A unit pixel of an image sensor and a photo detector are disclosed. The photo detector of the present invention configured to absorb light can include: a light-absorbing part configured to absorb light by being formed in a floated structure; an oxide film being in contact with one surface of the light-absorbing part; a source being in contact with one side of the other surface of the oxide film and separated from the light-absorbing part with the oxide film therebetween; a drain facing the source so as to be in contact with the other side of the other surface of the oxide film and separated from the light-absorbing part with the oxide film therebetween; and a channel interposed between the source and the drain and configured to form flow of an electric current between the source and the drain.
    Type: Grant
    Filed: September 2, 2011
    Date of Patent: October 29, 2013
    Inventor: Hoon Kim
  • Patent number: 8519456
    Abstract: A solid-state image pickup device in which electric charges accumulated in a photodiode conversion element are transferred to a second diffusion layer through a first diffusion layer.
    Type: Grant
    Filed: September 28, 2010
    Date of Patent: August 27, 2013
    Assignee: Sony Corporation
    Inventors: Atsushi Masagaki, Ikuhiro Yamamura
  • Patent number: 8492864
    Abstract: A solid-state imaging device includes: a substrate; a wiring layer formed on a front side of the substrate in which pixels are formed; a surface electrode pad section formed in the wiring layer; a light-shielding film formed on a rear side of the substrate; a pad section base layer formed in the same layer as the light-shielding film; an on-chip lens layer formed over the light-shielding film and the pad section base layer in a side opposite from the substrate side; a back electrode pad section formed above the on-chip lens layer; a through-hole formed to penetrate the on-chip lens layer, the pad section base layer, and the substrate so as to expose the surface electrode pad section; and a through-electrode layer which is formed in the through-hole and connects the surface electrode pad section and the back electrode pad section.
    Type: Grant
    Filed: October 4, 2011
    Date of Patent: July 23, 2013
    Assignee: Sony Corporation
    Inventor: Kazufumi Watanabe
  • Publication number: 20130141617
    Abstract: A solid-state imaging device including two semiconductor substrates arranged in layers is provided. Each semiconductor substrate has a semiconductor region in which a circuit constituting a part of a pixel array is formed. The circuits in the two semiconductor substrates are electrically connected to each other. Each semiconductor substrate includes one or more contact plugs for supplying a voltage to the semiconductor region. The number of the contact plugs of one semiconductor substrate in the pixel array is different from the number of the contact plugs of the other semiconductor substrate in the pixel array.
    Type: Application
    Filed: November 2, 2012
    Publication date: June 6, 2013
    Applicant: CANON KABUSHIKI KAISHA
    Inventor: CANON KABUSHIKI KAISHA
  • Publication number: 20130075791
    Abstract: In various embodiments, a charge-coupled device includes channel stops laterally spaced away from the channel by fully depleted regions.
    Type: Application
    Filed: September 20, 2012
    Publication date: March 28, 2013
    Inventor: Christopher Parks
  • Patent number: 8405097
    Abstract: An optical sensor and a method for manufacturing the same are provided. The optical sensor includes a first photosensitive layer, a first charge carrier collecting element, a second photosensitive layer and a second charge carrier collecting element. The first photosensitive layer has a first light incident surface. The first charge carrier collecting element is disposed on a surface of the first photosensitive layer opposite to the first light incident surface of the first photosensitive layer. The second photosensitive layer is adjacent to the first photosensitive layer and has a second light incident surface. The second charge carrier collecting element is disposed on a surface of the second photosensitive layer opposite to the second light incident surface of the second photosensitive layer.
    Type: Grant
    Filed: February 14, 2012
    Date of Patent: March 26, 2013
    Assignee: Novatek Microelectronics Corp.
    Inventor: Dong-Hai Huang
  • Publication number: 20130056708
    Abstract: A unit pixel of an image sensor and a photo detector are disclosed. The photo detector of the present invention configured to absorb light can include: a light-absorbing part configured to absorb light by being formed in a floated structure; an oxide film being in contact with one surface of the light-absorbing part; a source being in contact with one side of the other surface of the oxide film and separated from the light-absorbing part with the oxide film therebetween; a drain facing the source so as to be in contact with the other side of the other surface of the oxide film and separated from the light-absorbing part with the oxide film therebetween; and a channel interposed between the source and the drain and configured to form flow of an electric current between the source and the drain.
    Type: Application
    Filed: September 2, 2011
    Publication date: March 7, 2013
    Inventor: Hoon Kim
  • Publication number: 20130056709
    Abstract: A unit pixel of an image sensor and a photo detector are disclosed. The photo detector can include: a substrate in which a V-shaped groove having a predetermined angle is formed; a light-absorbing part formed in a floated structure above the V-shaped groove and to which light is incident; an oxide film formed between the light-absorbing part and the V-shaped groove and in which tunneling occurs; a source formed adjacent to the oxide film on a slope of one side of the V-shaped groove and separated from the light-absorbing part by the oxide film; a drain formed adjacent to the oxide film on a slope of the other side of the V-shaped groove and separated from the light-absorbing part by the oxide film; and a channel interposed between the source and the drain along the V-shaped groove to form flow of an electric current between the source and the drain.
    Type: Application
    Filed: September 2, 2011
    Publication date: March 7, 2013
    Inventor: Hoon Kim
  • Publication number: 20130056800
    Abstract: An image sensor is described in which the imaging pixels have reduced noise by blocking nitridation in selected areas. In one example, a method includes forming a first and second gate oxide layer over a substrate, forming a layer of photoresist over the first gate oxide layer, applying nitridation to the photoresist and the second gate oxide layer such that the first gate oxide layer is protected from the nitridation by the photoresist, and forming a polysilicon gate over the first and second gate oxide layers.
    Type: Application
    Filed: September 7, 2011
    Publication date: March 7, 2013
    Inventors: Jeong-Ho Lyu, Sohei Manabe, Howard Rhodes
  • Publication number: 20130037861
    Abstract: An image sensor for a semiconductor light-sensitive device including a semiconductor substrate and a light receiving device configured to receive light and generate a signal from the light. The image sensor may include an electron collecting device formed in the semiconductor substrate to receive at least a portion of the electrons generated by the light in the light receiving device. The image sensor may include a first type device isolation film configured to isolate the light receiving device from the electron collecting device. The image sensor may include a shielding film formed over the semiconductor substrate and configured to shield the first electron collecting device from the light.
    Type: Application
    Filed: July 12, 2012
    Publication date: February 14, 2013
    Applicant: Dongbu HiTek Co., Ltd.
    Inventor: Hoon JANG
  • Publication number: 20130032697
    Abstract: In accordance with an embodiment, a pixel includes at least two switches, each switch having a control terminal and first and second current carrying terminals. The control terminals of the first and second switches are commonly connected together. In accordance with another embodiment, a method for transferring charge from a first switch to a capacitance includes applying voltage to the commonly connected control terminals of the first and second switches.
    Type: Application
    Filed: April 21, 2011
    Publication date: February 7, 2013
    Inventor: Yannick De Wit
  • Patent number: 8357956
    Abstract: A solid-state imaging apparatus, controlling a potential on a semiconductor substrate for an electronic shutter operation, includes: a first semiconductor region of the first conductivity type for forming a photoelectric conversion region; a second semiconductor region of the first conductivity type, formed separately from the photoelectric conversion region, for accumulating carriers; a third semiconductor region of a second conductivity type arranged under the second semiconductor region, for operating as a potential barrier; a fourth semiconductor region of the second conductivity type extending between the first semiconductor region and the semiconductor substrate, and between the third semiconductor region and the semiconductor substrate; and a first voltage supply portion for supplying a voltage to the third semiconductor region; wherein the first voltage supply portion includes a fifth semiconductor region of the second conductivity type arranged in the pixel region, and a first electrode connected to
    Type: Grant
    Filed: March 11, 2011
    Date of Patent: January 22, 2013
    Assignee: Canon Kabushiki Kaisha
    Inventors: Masahiro Kobayashi, Yuichiro Yamashita
  • Publication number: 20130009068
    Abstract: The present invention discloses a radiation detector, an imaging device and an electrode structure thereof, and a method for acquiring an image. The radiation detector comprises: a radiation sensitive film, a top electrode on the radiation sensitive film, and an array of pixel units electrically coupled to the radiation sensitive film. Each pixel unit comprises: a pixel electrode (which is configured to collect a charge signal in a pixel area of the radiation sensitive film), a storage capacitor, a reset transistor, a buffer transistor, a column strobe transistor, and a row strobe transistor. The column strobe transistor and the row strobe transistor are connected in series between the buffer transistor and the signal line, and transfer the voltage signal of the corresponding pixel unit in response to a column strobe signal and a row strobe signal. The radiation detector may be used for, for example, X-ray digital imaging.
    Type: Application
    Filed: June 30, 2011
    Publication date: January 10, 2013
    Applicant: NUCTECH COMPANY LIMITED
    Inventors: Lan Zhang, Zhiqiang Chen, Ziran Zhao, Wanlong Wu, Yuanjing Li, Zhi Deng, Xiaocui Zheng
  • Publication number: 20130001404
    Abstract: A pixel array includes a plurality of pixel structures, with each pixel structure having a photo-sensitive element for generating charge in response to incident light; a charge conversion element; a first transfer gate and a second transfer gate connected in series between the photosensitive element and the charge conversion element or between the photosensitive element and a supply line; and an output stage. A first transfer gate control line is connected to the first transfer gates of a first sub-set of the pixel structures in the array; and a second transfer gate control line connected to the second transfer gates of a second sub-set of the pixel structures in the array. The first sub-set of pixel structures and second sub-set of pixel structures partially overlap, having at least one pixel structure in common between them.
    Type: Application
    Filed: June 29, 2012
    Publication date: January 3, 2013
    Inventor: Guy MEYNANTS
  • Publication number: 20120313205
    Abstract: Photosensitive devices and associated methods are provided. In one aspect, for example, a frontside-illuminated photosensitive imager devices can include a semiconductor substrate having multiple doped regions forming a least one junction and a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation on an opposite side of the semiconductor substrate from the multiple doped regions. The textured region can include surface features sized and positioned to facilitate tuning to a preselected wavelength of light. The device can also include an electrical transfer element coupled to the semiconductor substrate and operable to transfer an electrical signal from the at least one junction.
    Type: Application
    Filed: June 11, 2012
    Publication date: December 13, 2012
    Inventors: Homayoon Haddad, Jeffrey McKee, Jutao Jiang, Drake Miller, Chintamani Palsule, Leonard Forbes
  • Publication number: 20120300102
    Abstract: In a photoelectric conversion apparatus including a plurality of focus detection pixels, each focus detection pixel including a photoelectric conversion element, the photoelectric conversion element having a light receiving surface, and a plurality of wiring layers to read a signal supplied by the photoelectric conversion element, the photoelectric conversion apparatus further includes a light shielding film covering a part of the photoelectric conversion element and having the lower surface positioned closer to a plane, which includes a light receiving surface of the photoelectric conversion element and which is parallel to the light receiving surface, than a lower surface of the lowermost one of the plurality of wiring layers.
    Type: Application
    Filed: May 16, 2012
    Publication date: November 29, 2012
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Seiichi Tamura, Mayu Ishikawa, Aiko Kato, Masatsugu Itahashi, Kouhei Hashimoto
  • Publication number: 20120256287
    Abstract: In a back-illuminated solid-state image pickup device including a semiconductor substrate 4 having a light incident surface at a back surface side and a plurality of charge transfer electrodes 2 disposed at a light detection surface at an opposite side of the semiconductor substrate 4 with respect to the light incident surface, a plurality of openings OP for transmitting light are formed between charge transfer electrodes 2 that are adjacent to each other. Also, a plurality of openings OP for transmitting light may be formed inside each charge transfer electrode 2.
    Type: Application
    Filed: March 23, 2010
    Publication date: October 11, 2012
    Applicant: Hamamatsu Photonics K.K.
    Inventors: Hisanori Suzuki, Yasuhito Yoneta, Masaharu Muramatsu, Koei Yamamoto
  • Publication number: 20120200841
    Abstract: A first photoelectric conversion element, which detects light and converts the light into photoelectrons has: one first MOS diode having a first electrode formed on a semiconductor base body with an insulator therebetween; and a plurality of second MOS diodes, each of which has a second electrode formed on the semiconductor base body with the insulator therebetween. The first electrode of the first MOS diode has, when viewed from the upper surface, a comb-like shape wherein a plurality of branch portions are branched from one electrode portion. Each second electrode of each of the second MOS diodes is, when viewed from the upper surface, separated from the first electrode, and is disposed to nest between the branch portions of the first electrode.
    Type: Application
    Filed: October 1, 2010
    Publication date: August 9, 2012
    Applicant: HONDA MOTOR CO., LTD.
    Inventors: Tomoyuki Kamiyama, Keisuke Korekado
  • Publication number: 20120193743
    Abstract: A solid-state imaging device includes a semiconductor region of p-type; a buried region of n-type, configured to serve as a photodiode together with the semiconductor region; a extraction region of n-type, configured to extract charges generated by the photodiode from the buried region, having higher impurity concentration than the buried region; a read-out region of n-type, configured to accumulate charges, which are transferred from the buried region having higher impurity concentration than the buried region; and a potential gradient changing mechanism, configured to control a potential of the channel, and to change a potential gradient of a potential profile from the buried region to the read-out region and a potential gradient of a potential profile from the buried region to the extraction region, so as to control the transferring/extraction of charges.
    Type: Application
    Filed: October 5, 2010
    Publication date: August 2, 2012
    Applicant: National University Corporation Shizuoka University
    Inventors: Shoji Kawahito, Tomonari Sawada
  • Publication number: 20120175685
    Abstract: An image sensor based on a depth pixel structure is provided. The image sensor may include a pixel including a photodiode, and the photodiode may include a transfer gate to transfer, to a floating diffusion node, an electron generated by a light reflected from an object.
    Type: Application
    Filed: January 5, 2012
    Publication date: July 12, 2012
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Seong Jin KIM, Sang Wook Han, Albert Theuwissen
  • Patent number: 8198121
    Abstract: A method of manufacturing a solid-state imaging device. Light-receiving sensor portions each constituting a pixel in the form of a matrix is arranged. The matrix has columns aligned in a vertical direction and rows aligned in a horizontal direction. Charge-transfer portions are formed on either side of the columns of said pixels. Transfer electrodes in said charge-transfer portions are formed to include a first transfer electrode formed of a first electrode layer and a second transfer electrode formed by electrically connecting the first electrode layer and a second electrode layer through a contact. The second transfer electrode being disposed in the vertical direction above the charge-transfer portion in a vicinity of the contact to decrease the width of the charge-transfer portions in the horizontal direction and increase the light receiving sensor portions in the vertical direction.
    Type: Grant
    Filed: March 15, 2010
    Date of Patent: June 12, 2012
    Assignee: Sony Corporation
    Inventor: Hideo Kanbe
  • CCD
    Publication number: 20120119066
    Abstract: A back-illuminated CCD includes a two-dimensional array of charge collection sites arranged in rows and columns. Each row is associated with a plurality of electrodes at the front face extending in the direction of the row and corresponding to respective phase voltages. A plurality of conducting strips is provided with each strip having repeatedly reversing inclined portions. Each portion is in electrical contact with the electrodes of a corresponding phase voltage of two or more rows. Each portion is inclined relative to the rows in the opposite direction to that in which the preceding portion is inclined.
    Type: Application
    Filed: November 14, 2011
    Publication date: May 17, 2012
    Applicant: E2V Technologies (UK) Limited
    Inventor: Kevin Anthony Derek Hadfield
  • Publication number: 20120112247
    Abstract: A basic device for an image sensor includes a photogeneration and charge-collecting region formed at the surface of a semiconductor substrate having a first type of conductivity, adapted to be biased at a reference voltage, the photogeneration region being associated with a device for the transfer, multiplication, and insulation of charges. The photogeneration region has an insulated gate mounted thereon, which is adapted to be alternately biased at a first voltage and at a second voltage, the insulated gate being made of a low-absorption material.
    Type: Application
    Filed: May 11, 2010
    Publication date: May 10, 2012
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Yvon Cazaux, BenoƮt Giffard
  • Patent number: 8164121
    Abstract: A six-phase charge coupled device (CCD) pixel includes a pixel pair, with each pixel having two adjacent control gates overlying corresponding variable potential wells, where voltages applied to the control gates enable charge to be accumulated into and transferred out of the wells. A clear window region overlies a fixed potential gradient region, decreasing in potential away from the control gates. This region enables a wide band of photons to be sensed by the photosensitive silicon of the CCD. The decreasing potential levels facilitate high charge transfer efficiency (i.e., high CTE) from pixel to pixel via the control or transfer gates. By applying particular voltages to the control gates, charge can be quickly and efficiently transferred between pixels.
    Type: Grant
    Filed: May 14, 2010
    Date of Patent: April 24, 2012
    Assignee: Imagerlabs
    Inventor: Mark Wadsworth
  • Publication number: 20120080726
    Abstract: Disclosed herein is a solid-state imaging device including: a semiconductor layer including a photoelectric conversion section receiving incident light and generating a signal charge; and a light absorbing section for absorbing transmitted light transmitted by the photoelectric conversion section and having a longer wavelength than light absorbed by the photoelectric conversion section, the transmitted light being included in the incident light, the light absorbing section being disposed on a side of another surface of the semiconductor layer on an opposite side from one surface of the semiconductor layer, the incident light being made incident on the one surface of the semiconductor layer.
    Type: Application
    Filed: September 23, 2011
    Publication date: April 5, 2012
    Applicant: SONY CORPORATION
    Inventor: Yorito Sakano
  • Publication number: 20120012899
    Abstract: Provided are a distance measuring sensor including a double transfer gate, and a three dimensional color image sensor including the distance measuring sensor. The distance measuring sensor may include first and second charge storage regions which are spaced apart from each other on a substrate doped with a first impurity, the first and second charge storage regions being doped with a second impurity; a photoelectric conversion region between the first and second charge storage regions on the substrate, being doped with the second impurity, and generating photo-charges by receiving light; and first and second transfer gates which are formed between the photoelectric conversion region and the first and second charge storage regions above the substrate to selectively transfer the photo-charges in the photoelectric conversion region to the first and second charge storage regions.
    Type: Application
    Filed: September 21, 2011
    Publication date: January 19, 2012
    Inventors: Young-gu Jin, Dae-Kil Cha, Seung-hoon Lee, Yoon-dong Park
  • Publication number: 20110309462
    Abstract: In various embodiments, a photodetector includes a semiconductor substrate and a plurality of pixel regions. Each of the plurality of pixel regions comprises an optically sensitive layer over the semiconductor substrate. A pixel circuit is formed for each of the plurality of pixel regions. Each pixel circuit includes a pinned photodiode, a charge store, and a read out circuit for each of the plurality pixel regions. The optically sensitive layer is in electrical communication with a portion of a silicon diode to form the pinned photodiode. A potential difference between two electrodes in communication with the optically sensitive layer associated with a pixel region exhibits a time-dependent bias; a biasing during a first film reset period being different from a biasing during a second integration period.
    Type: Application
    Filed: June 8, 2011
    Publication date: December 22, 2011
    Inventors: Edward Hartley Sargent, Rajsapan Jain, Igor Constantin Ivanov, Michael R. Malone, Michael Charles Brading, Hui Tian, Pierre Henri Rene Della Nave, Jess Jan Young Lee
  • Patent number: 8044478
    Abstract: Provided is an image sensor. The image sensor can include a readout circuitry on a first substrate. An interlayer dielectric is formed on the first substrate, and comprises a lower line therein. A crystalline semiconductor layer is bonded to the interlayer dielectric. A photodiode can be formed in the crystalline semiconductor layer, and comprises a first impurity region and a second impurity region. A via hole can be formed passing through the crystalline semiconductor layer and the interlayer dielectric to expose the lower line. A plug is formed inside the first via hole to connect with only the lower line and the first impurity region. A device isolation region can be formed in the crystalline semiconductor layer to separate the photodiode according to unit pixel.
    Type: Grant
    Filed: September 5, 2008
    Date of Patent: October 25, 2011
    Assignee: Dongbu Hitek Co., Ltd.
    Inventor: Joon Hwang
  • Publication number: 20110241080
    Abstract: Disclosed herein is a solid-state imaging device, including a plurality of unit pixels, wherein the plurality of unit pixels include: a photoelectric conversion element; a first transfer gate; a charge retaining region; a second transfer gate; and a floating diffusion region; a boundary part between the photoelectric conversion element and the charge retaining region having a structure of an overflow path formed at a potential determining a predetermined amount of charge, the overflow path transferring a charge by which the predetermined amount of charge is exceeded as a signal charge from the photoelectric conversion element to the charge retaining region, and the first transfer gate having two electrodes with different work functions as gate electrodes arranged above the overflow path and above the charge retaining region, respectively.
    Type: Application
    Filed: March 24, 2011
    Publication date: October 6, 2011
    Applicant: SONY CORPORATION
    Inventor: Shinya Yamakawa
  • Publication number: 20110233386
    Abstract: Embodiments of the present invention include an electron counter with a charge-coupled device (CCD) register configured to transfer electrons to a Geiger-mode avalanche diode (GM-AD) array operably coupled to the output of the CCD register. At high charge levels, a nondestructive amplifier senses the charge at the CCD register output to provide an analog indication of the charge. At low charge levels, noiseless charge splitters or meters divide the charge into single-electron packets, each of which is detected by a GM-AD that provides a digital output indicating whether an electron is present. Example electron counters are particularly well suited for counting photoelectrons generated by large-format, high-speed imaging arrays because they operate with high dynamic range and high sensitivity. As a result, they can be used to image scenes over a wide range of light levels.
    Type: Application
    Filed: March 23, 2010
    Publication date: September 29, 2011
    Applicant: Massachusetts Institute of Technology
    Inventors: David C. Shaver, Bernard B. Kosicki, Robert K. Reich, Dennis D. Rathman, Daniel R. Schuette, Brian F. Aull
  • Publication number: 20110233707
    Abstract: A solid-state image pickup element includes: a photoelectric conversion region formed in a semiconductor substrate; an electric charge holding region formed in the semiconductor substrate for holding electric charges accumulated in the photoelectric conversion region until the electric charges are read out; a transfer gate formed on the semiconductor substrate for transferring electric charges generated by photoelectric conversion in the photoelectric conversion region to the electric charge holding region, and a light blocking film formed on an upper surface of the transfer gate. In this case, a portion between the semiconductor substrate and the light blocking film is thinly formed as a light made incident to the photoelectric conversion region has a longer wavelength in a wavelength region.
    Type: Application
    Filed: March 17, 2011
    Publication date: September 29, 2011
    Applicant: SONY CORPORATION
    Inventors: Taketo Fukuro, Jun Okuno
  • Publication number: 20110227134
    Abstract: Systems and methods of pixel sensing circuits. In accordance with a first embodiment of the present invention, a pixel sensing circuit includes a floating diffusion functionally coupled to and surrounded by a ring transfer gate. The ring transfer gate is functionally coupled to and surrounded by a photo diode. The photo diode may be surrounded by a region of poly silicon. The disclosed structure provides radiation hardening and low light performance.
    Type: Application
    Filed: May 27, 2011
    Publication date: September 22, 2011
    Inventor: Manuel Innocent
  • Publication number: 20110220971
    Abstract: Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and a passivation region positioned between the textured region and the at least one junction. The passivation region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.
    Type: Application
    Filed: March 17, 2011
    Publication date: September 15, 2011
    Applicant: SiOnyx, Inc.
    Inventors: Homayoon Haddad, Jutao Jiang, Jeffrey McKee, Drake Miller, Chintamani Palsule, Leonard Forbes
  • Publication number: 20110198481
    Abstract: An image sensor and a method of operating the image sensor are provided. At least one pixel of the image sensor includes a detection portion including a plurality of doping areas having different pinning voltages, and a demodulation portion to receive an electron from the detection portion, and to demodulate the received electron.
    Type: Application
    Filed: February 8, 2011
    Publication date: August 18, 2011
    Applicant: SAMSUNG ELECTRONICS Co., LTD.
    Inventors: Seong Jin Kim, Sang Woo Han
  • Patent number: 7928477
    Abstract: A solid-state imaging apparatus, controlling a potential on a semiconductor substrate for an electronic shutter operation, includes: a first semiconductor region of the first conductivity type for forming a photoelectric conversion region; a second semiconductor region of the first conductivity type, formed separately from the photoelectric conversion region, for accumulating carriers; a third semiconductor region of a second conductivity type arranged under the second semiconductor region, for operating as a potential barrier; a fourth semiconductor region of the second conductivity type extending between the first semiconductor region and the semiconductor substrate, and between the third semiconductor region and the semiconductor substrate; and a first voltage supply portion for supplying a voltage to the third semiconductor region; wherein the first voltage supply portion includes a fifth semiconductor region of the second conductivity type arranged in the pixel region, and a first electrode connected to
    Type: Grant
    Filed: April 2, 2009
    Date of Patent: April 19, 2011
    Assignee: Canon Kabushiki Kaisha
    Inventors: Masahiro Kobayashi, Yuichiro Yamashita