Base Region Of Bipolar Transistors (epo) Patents (Class 257/E29.044)
  • Patent number: 8946861
    Abstract: Disclosed are bipolar devices, which incorporate an entirely monocrystalline link-up region between the intrinsic and extrinsic base layers, and methods of forming the devices. In the methods, a selective epitaxial deposition process grows monocrystalline semiconductor material for the extrinsic base layer on an exposed edge portion of a monocrystalline section of an intrinsic base layer. This deposition process is continued to intentionally overgrow the monocrystalline semiconductor material until it grows laterally and essentially covers a dielectric landing pad on a center portion of that same monocrystalline section of the intrinsic base layer. Subsequently, an opening is formed through the extrinsic base layer to the dielectric landing pad and the dielectric landing pad is selectively removed, thereby exposing monocrystalline surfaces only of the intrinsic and extrinsic base layers.
    Type: Grant
    Filed: June 11, 2013
    Date of Patent: February 3, 2015
    Assignee: International Business Machines Corporation
    Inventors: Renata A. Camillo-Castillo, Vibhor Jain, Vikas K. Kaushal, Marwan H. Khater
  • Patent number: 7838965
    Abstract: The integrated capacitor structure comprises a first branch with a first capacitor (60) and a second branch with a second capacitor (70). The second capacitor (70) has a higher capacitance density and a lower breakdown voltage than the first capacitor (60). The first branch has a shorter RC time constant than the second branch, such that a voltage peak will substantially follow the first branch. This first capacitor (60) has a sufficient capacity to store the charge of the voltage peak. In one embodiment, the second capacitor (70) is a stacked capacitor. The structure is suitable for ESD-protection and may, to this end, additionally comprise diodes (21) and resistors (22).
    Type: Grant
    Filed: February 27, 2006
    Date of Patent: November 23, 2010
    Assignee: NXP B.V.
    Inventors: Mareike Klee, Rainer Kiewitt, Ulrich Schiebel, Hans-Wolfgang Brand, Ruediger Mauczok
  • Patent number: 7772079
    Abstract: A vertical organic transistor and a method for fabricating the same are provided, wherein an emitter, a grid with openings and a collector are sequentially arranged above a substrate. Two organic semiconductor layers are interposed respectively between the emitter and the grid with openings and between the grid with openings and the collector. The channel length is simply decided by the thickness of the organic semiconductor layers. The collector current depends on the space-charge-limited current contributed by the potential difference between the emitter and the openings of the grid. And the grid voltage can thus effectively control the collector current. Further, the fabrication process of the vertical organic transistor of the present invention is simple and exempt from using the photolithographic process.
    Type: Grant
    Filed: February 20, 2009
    Date of Patent: August 10, 2010
    Assignee: National Chiao Tung University
    Inventors: Hsin-Fei Meng, Sheng-Fu Horng, Yu-Chiang Chao
  • Patent number: 7692269
    Abstract: A vertical organic transistor and a method for fabricating the same are provided, wherein an emitter, a grid with openings and a collector are sequentially arranged above a substrate. Two organic semiconductor layers are interposed respectively between the emitter and the grid with openings and between the grid with openings and the collector. The channel length is simply decided by the thickness of the organic semiconductor layers. The collector current depends on the space-charge-limited current contributed by the potential difference between the emitter and the openings of the grid. And the grid voltage can thus effectively control the collector current. Further, the fabrication process of the vertical organic transistor of the present invention is simple and exempt from using the photolithographic process.
    Type: Grant
    Filed: February 15, 2007
    Date of Patent: April 6, 2010
    Assignee: National Chiao Tung University
    Inventors: Hsin-Fei Meng, Sheng-Fu Horng, Yu-Chiang Chao
  • Patent number: 7667295
    Abstract: In a semiconductor device including a bipolar transistor, a base region has a two layer structure including a first base region, and a second base region which is provided around the first base region and has a lower impurity density than that of the first base region and has a shallower depth than that of the first base region.
    Type: Grant
    Filed: May 16, 2008
    Date of Patent: February 23, 2010
    Assignee: NEC Electronics Corporation
    Inventor: Hiroki Fujii
  • Patent number: 7656002
    Abstract: The present invention relates to a microelectronic device having a bipolar epitaxial structure that provides at least one bipolar transistor element formed over at least one field effect transistor (FET) epitaxial structure that provides at least one FET element. The epitaxial structures are separated with at least one separation layer. Additional embodiments of the present invention may use different epitaxial layers, epitaxial sub-layers, metallization layers, isolation layers, layer materials, doping materials, isolation materials, implant materials, or any combination thereof.
    Type: Grant
    Filed: November 30, 2007
    Date of Patent: February 2, 2010
    Assignee: RF Micro Devices, Inc.
    Inventors: Curtis A. Barratt, Michael T. Fresina, Brian G. Moser, Dain C. Miller, Walter A. Wohlmuth
  • Patent number: 7618871
    Abstract: For the production of an improved bipolar transistor comprising a low-resistance base terminal, a dielectric layer is deposited over the semiconductor substrate and is highly doped via an implantation mask. In a subsequent controlled thermal step, the dopant is then indiffused into the semiconductor substrate from the dielectric layer serving as a dopant repository. This gives rise to a low-resistance region with which the extrinsic base can be defined carefully.
    Type: Grant
    Filed: January 19, 2005
    Date of Patent: November 17, 2009
    Assignee: Austriamicrosystems AG
    Inventors: Gerald Meinhardt, Jochen Kraft
  • Publication number: 20090261385
    Abstract: A bipolar transistor includes a base layer design and a method for fabricating such a bipolar transistor that employ a built-in accelerating field focused on a base region adjacent to a collector, where minority carrier transport is otherwise retarded. The accelerating field of the base layer includes on average, a relatively low p-doping level in a first region proximate to the collector and a relatively high p-doping level in a second region proximate to an emitter. Alternatively, the accelerating field can be derived from band gap grading, wherein the grade of band gap in the first region is greater than the grade of band gap in the second region, and the average band gap of the first region is lower than that of the second region.
    Type: Application
    Filed: June 24, 2009
    Publication date: October 22, 2009
    Applicant: Kopin Corporation
    Inventors: Eric M. Rehder, Roger E. Welser, Charles R. Lutz
  • Patent number: 7541249
    Abstract: A process for producing a base connection of a bipolar transistor is provided. The process includes the steps of providing a semiconductor structure that can include a three-dimensional sacrificial structure that is selectively removable with respect to adjacent regions. A first semiconductor layer and a second layer of dielectric material is deposited. The first semiconductor layer is partially exposed by partial removal of the second layer. A first reaction layer is deposited that, together with the first semiconductor layer forms reaction products, which are selectively removable with respect to adjacent regions. Remaining material of the first reaction layer that has not reacted with the material of the first semiconductor layer is removed. A second reaction layer is deposited that, with the first semiconductor layer, forms a low-resistivity compound. Remaining material of the second reaction layer that has not reacted with the material of the first semiconductor layer is removed.
    Type: Grant
    Filed: March 31, 2005
    Date of Patent: June 2, 2009
    Assignee: Atmel Germany GmbH
    Inventor: Christoph Bromberger
  • Patent number: 7521772
    Abstract: A heterostructure bipolar transistor (HBT) and related methods are disclosed. In one embodiment, the HBT includes a heterostructure bipolar transistor (HBT) including: a substrate; a monocrystalline emitter atop the substrate; a collector in the substrate; at least one isolation region adjacent to the collector; a monocrystalline silicon germanium (SiGe) intrinsic base extending over each isolation region; and a monocrystalline silicon extrinsic base. A method may include forming the intrinsic and extrinsic base and the emitter as monocrystalline, with the extrinsic base (and emitter) formed in a self-aligned fashion utilizing selective-epitaxial growth on porous silicon. As a result, some mask levels can be omitted, making this an inexpensive alternative to conventional processing.
    Type: Grant
    Filed: November 8, 2006
    Date of Patent: April 21, 2009
    Assignee: International Business Machines Corporation
    Inventors: Thomas N Adam, Thomas A. Wallner
  • Patent number: 7485538
    Abstract: A base structure for high performance Silicon Germanium (SiGe) based heterojunction bipolar transistors (HBTs) with arsenic atomic layer doping (ALD) is disclosed. The ALD process subjects the base substrate to nitrogen gas or hydrogen gas (in ambient temperature approximately equal to 500 degrees Celsius) and provides an additional SiGe spacer layer. The surface of the final silicon cap layer is preferably etched to remove most of the arsenic. The resulting SiGe HBT with an arsenic ALD layer is less sensitive to process temperature and exposure times, and exhibits lower dopant segregation and sharper base profiles.
    Type: Grant
    Filed: March 27, 2006
    Date of Patent: February 3, 2009
    Assignee: National Semiconductor Corporation
    Inventors: Jamal Ramdani, Craig Richard Printy
  • Patent number: 7442616
    Abstract: A bipolar transistor (100) is manufactured using the following processes: (a) forming a base electrode layer (129) as a portion of a base electrode over a semiconductor substrate (110); (b) forming a first portion of an emitter electrode (154) over the base electrode layer; (c) forming a mask layer (280) over a first portion of the base electrode layer, a portion of the first portion of the emitter electrode and a portion of the semiconductor substrate; and (d) implanting a dopant into a second portion of the base electrode layer after forming the emitter electrode after forming the mask layer.
    Type: Grant
    Filed: June 15, 2006
    Date of Patent: October 28, 2008
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Jay P. John, James A. Kirchgessner, Matthew W. Menner
  • Publication number: 20080179632
    Abstract: Bipolar transistors and methods of forming the bipolar transistors. The method including forming a P-type collector in a silicon substrate; forming an intrinsic base on the collector, the intrinsic base including a first N-type dopant species, germanium and carbon; forming an N-type extrinsic base over a first region and a second region of the intrinsic base, the first region over the collector and the second region over a dielectric adjacent to the collector, the N-type extrinsic base containing or not containing carbon; and forming a P-type emitter on the first region of the intrinsic base.
    Type: Application
    Filed: April 1, 2008
    Publication date: July 31, 2008
    Inventors: Thomas N. Adam, Rajendran Krishnasamy
  • Patent number: 7358546
    Abstract: The present invention realizes a heterobipolar transistor using a SiGeC base layer in order to improve its electric characteristics. Specifically, the distribution of carbon and boron within the base layer is controlled so that the concentration of boron is higher than the concentration of carbon on the side bordering on the emitter layer, and upon the formation of the emitter layer, both boron and carbon are dispersed into a portion of the emitter layer that comes into contact with the base layer.
    Type: Grant
    Filed: June 2, 2006
    Date of Patent: April 15, 2008
    Assignee: Fujitsu Limited
    Inventors: Hidekazu Sato, Takae Sukegawa, Kousuke Suzuki
  • Patent number: 7256433
    Abstract: A bipolar transistor having enhanced characteristics is fabricated by etching a base mesa, which is formed below an emitter mesa (upper emitter layer) and a base electrode, so as to have jut regions on the edges of its generally rectangular region. A mask film, e.g., insulating film, is formed to cover the rectangular region and jut regions, and the base layer is etched by use of the insulating film as a mask to form a base mesa. Consequently, abnormal etching can be prevented from occurring along the base electrode and emitter mesa on the edges of the area where the base electrode and emitter mesa confront each other, and an increase in resistance between the base layer and the emitter layer can be prevented, whereby the bipolar transistor can have enhanced characteristics.
    Type: Grant
    Filed: April 28, 2004
    Date of Patent: August 14, 2007
    Assignee: Renesas Technology Corp.
    Inventors: Atsushi Kurokawa, Masao Yamane, Yoshinori Imamura
  • Patent number: 7091100
    Abstract: In the inventive method of producing a base terminal structure for a bipolar transistor, an etch stop layer is applied on a single-crystal semiconductor substrate, a poly-crystal base terminal layer is produced on the etch stop layer and an emitter window is etched in the base terminal layer using the etch stop layer as an etch stop.
    Type: Grant
    Filed: August 12, 2004
    Date of Patent: August 15, 2006
    Assignee: Infineon Technologies AG
    Inventors: Uwe Rudolph, Martin Seck, Armin Tilke
  • Patent number: 6699741
    Abstract: A high frequency bipolar transistor that has a silicon germanium intrinsic base region is formed in a semiconductor fabrication process that forms the extrinsic base regions after the intrinsic base region has been formed. The extrinsic base regions are epitaxially grown single crystal silicon that is doped during the growth.
    Type: Grant
    Filed: August 16, 2002
    Date of Patent: March 2, 2004
    Assignee: National Semiconductor Corporation
    Inventors: Alexei Sadovnikov, Christopher John Knorr