Controllable By Variation Of Applied Mechanical Force (e.g., Of Pressure) (epo) Patents (Class 257/E29.324)
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Publication number: 20120205753Abstract: A micro-electromechanical system (MEMS) device includes a substrate, a first beam, a second beam, and a third beam. The first beam includes first and second portions separated by an isolation joint. The first and second portions each comprise a semiconductor and a first dielectric layer. An electrically conductive trace is mechanically coupled to the first beam and electrically coupled to the second portion's semiconductor but not the first portion's semiconductor. The second beam includes a second dielectric layer. The profile of each of the first, second, and third beams has been formed by a dry etch. A cavity separates a surface of the substrate from the first, second, and third beams. The cavity has been formed by a dry etch. A side wall of each of the first, second, and third beams has substantially no dielectric layer disposed thereon, and the dielectric layer has been removed by a vapor-phase etch.Type: ApplicationFiled: February 14, 2011Publication date: August 16, 2012Applicant: Kionix, Inc.Inventors: Scott G. ADAMS, Andrew J. Minnick, Charles W. Blackmer, Kenneth D. Brennan, Mollie K. Devoe
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Publication number: 20120205756Abstract: A semiconductor device includes a semiconductor chip with a gate electrode, and a stress detecting element placed on a surface of the semiconductor chip, and which detects stress applied to the surface. The semiconductor device controls a control signal to be applied to the gate electrode in response to stress detected by the stress detecting element. The stress detecting element is preferably provided as a first stress detecting element which detects stress applied to a central portion of the semiconductor chip in plan view. The stress detecting element is preferably provided as a second stress detecting element which detects stress applied to a circumferential portion of the semiconductor chip in plan view.Type: ApplicationFiled: October 13, 2011Publication date: August 16, 2012Applicant: MITSUBISHI ELECTRIC CORPORATIONInventor: Atsushi NARAZAKI
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Publication number: 20120205752Abstract: In an embodiment, a micro-electromechanical device can include a substrate, a beam, and an isolation joint. The beam can be suspended relative to a surface of the substrate. The isolation joint can be between a first portion and a second portion of the beam, and can have a non-linear shape. In another embodiment, a micro-electromechanical device can include a substrate, a beam, and an isolation joint. The beam can be suspended relative to a surface of the substrate. The isolation joint can be between a first portion and a second portion of the beam. The isolation joint can have a first portion, a second portion, and a bridge portion between the first portion and the second portion. The first and second portions of the isolation joint can each have a seam and a void, while the bridge portion can be solid.Type: ApplicationFiled: February 14, 2011Publication date: August 16, 2012Applicant: Kionix, Inc.Inventors: Charles W. Blackmer, Scott G. Adams, Andrew S. Hocking, Kristin J. Lynch, Ashish A. Shah
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Publication number: 20120199921Abstract: Provided is a technique for packaging a sensor structure having a contact sensing surface and a signal processing LSI that processes a sensor signal. The sensor structure has the contact sensing surface and sensor electrodes. The signal processing integrated circuit is embedded in a semiconductor substrate. The sensor structure and the semiconductor substrate are bonded by a bonding layer, forming a sensor device as a single chip. The sensor electrodes and the integrated circuit are sealed inside the sensor device, and the sensor electrodes and external terminals of the integrated circuit are led out to the back surface of the semiconductor substrate through a side surface of the semiconductor substrate.Type: ApplicationFiled: October 13, 2010Publication date: August 9, 2012Applicants: TOHOKU UNIVERSITY, TOYOTA JIDOSHA KABUSHIKI KAISHA, KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHOInventors: Shuji Tanaka, Masayoshi Esashi, Masanori Muroyama, Sakae Matsuzaki, Mitsutoshi Makihata, Yutaka Nonomura, Motohiro Fujiyoshi, Takahiro Nakayama, Ui Yamaguchi, Hitoshi Yamada
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Publication number: 20120199920Abstract: A structured glass wafer for packaging a microelectromechanical-system (MEMS) wafer. The structured glass wafer includes a sheet of glass, and an access hole. The sheet of glass has a first side and a second side, and is configured to provide a protective covering for MEMS devices. The access hole extends through the sheet of glass from the first side to the second side of the sheet of glass, and is configured to provide access to a group of electrical contacts of a group of MEMS devices. A packaged MEMS wafer including the structured glass wafer, and a method for fabricating a packaged MEMS wafer are also provided.Type: ApplicationFiled: February 3, 2011Publication date: August 9, 2012Inventors: Zhuqing ZHANG, Rodney L. Alley
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Patent number: 8237235Abstract: A metal-ceramic multilayer structure is provided. The underlying layers of the metal/ceramic multilayer structure have sloped sidewalls such that cracking of the metal-ceramic multilayer structure may be reduced or eliminated. In an embodiment, a layer immediately underlying the metal-ceramic multilayer has sidewalls sloped less than 75 degrees. Subsequent layers underlying the layer immediately underlying the metal/ceramic layer have sidewalls sloped greater than 75 degrees. In this manner, less stress is applied to the overlying metal/ceramic layer, particularly in the corners, thereby reducing the cracking of the metal-ceramic multilayer. The metal/ceramic multilayer structure includes one or more alternating layers of a metal seed layer and a ceramic layer.Type: GrantFiled: January 22, 2010Date of Patent: August 7, 2012Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ting-Hau Wu, Chun-Ren Cheng, Shang-Ying Tsai, Jung-Huei Peng, Jiou-Kang Lee
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Publication number: 20120194282Abstract: A radio frequency microelectromechanical (RF MEMS) device can comprise an actuation p-n junction and a sensing p-n junction formed within a semiconductor substrate. The RF MEMS device can be configured to operate in a mode in which an excitation voltage is applied across the actuation p-n junction varying a non-mobile charge within the actuation p-n junction to modulate an electric field acting upon dopant ions and creating electrostatic forces. The electrostatic forces can create a mechanical motion within the actuation p-n junction. The mechanical motion can modulate a depletion capacitance of the sensing p-n junction, thereby creating a motional current. At least one of the p-n junctions can be located at an optimal location to maximize the efficiency of the RF MEMS device at high resonant frequencies.Type: ApplicationFiled: July 29, 2011Publication date: August 2, 2012Applicant: CORNELL UNIVERSITYInventors: Eugene Hwang, Sunil Ashok Bhave
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Publication number: 20120193732Abstract: An MEMS device and a method for forming the same are provided. The MEMS device comprises a first interlayer dielectric layer on a semiconductor substrate; a cavity in the first interlayer dielectric layer; first openings in the first interlayer dielectric layer over the cavity and connected with the cavity, each first opening comprising a lower portion and an upper portion having non-aligned sidewalls, convex sections are formed in the first interlayer dielectric layer between the lower and upper portions; an electrode being suspended in the cavity and movable relative to the substrate; a second interlayer dielectric layer on the first interlayer dielectric layer; second openings in the second interlayer dielectric layer and connected with the first openings, each second opening is disposed at a location that does not extend past the convex section; a third interlayer dielectric layer fully filling at least the second openings to seal the cavity.Type: ApplicationFiled: September 23, 2011Publication date: August 2, 2012Applicant: Semiconductor Manufacturing International (Shanghai) CorporationInventors: XIAOJUN CHEN, Pinghuan Wu, Herb Huang
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Publication number: 20120194286Abstract: Systems and methods for manufacturing a chip comprising a plurality of MEMS devices arranged in an integrated circuit are provided. In one aspect, the systems and methods provide for a chip including electronic elements formed on a semiconductor material substrate. The chip further includes a stack of interconnection layers including layers of conductor material separated by layers of dielectric material. MEMS devices are formed within the stack of interconnection layers by applying gaseous HF to a first layer of dielectric material positioned highest in the stack of interconnection layers. The stack of interconnection layers includes at least one unetched layer of dielectric material, and at least one layer of conductor material for routing connections to and from the electronic elements.Type: ApplicationFiled: February 1, 2012Publication date: August 2, 2012Applicant: Baolab Microsystems SLInventor: Josep Montanya Silvestre
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Publication number: 20120193733Abstract: A capacitance type MEMS sensor has a first electrode portion and a second electrode portion facing each other. The sensor includes a semiconductor substrate having a recess dug in a thickness direction of the semiconductor substrate, the recess having sidewalls, one of which serves as the first electrode portion. The sensor further includes a diaphragm serving as the second electrode portion, the diaphragm arranged within the recess to face the first electrode portion in a posture extending along a depth direction of the recess, the diaphragm having a lower edge spaced apart from the bottom surface of the recess, and is made of the same material as the semiconductor substrate. The sensor further includes an insulating film arranged to join the diaphragm to the semiconductor substrate.Type: ApplicationFiled: January 26, 2012Publication date: August 2, 2012Applicant: ROHM CO., LTD.Inventor: Goro NAKATANI
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Publication number: 20120193731Abstract: Sensor packages and methods for making a sensor device package for side mounting on a circuit board. A sensor device(s) in a mechanical layer of silicon is sandwiched between first and second layers of glass to create a wafer. A first via(s) is created in the first or second layers to expose a predefined area of the mechanical layer of silicon. A second via(s) is created in the first or second layers. The least one second via has a depth dimension that is less than a depth dimension of the first via. A metallic trace is applied between the exposed area on the mechanical layer and a portion of the second via. The wafer is sliced such that the second via is separated into two sections, thereby creating a sensor die. The sensor die is then electrically and mechanically bonded to a circuit board at the sliced second via.Type: ApplicationFiled: February 1, 2011Publication date: August 2, 2012Applicant: Honeywell International Inc.Inventor: Michael Foster
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Publication number: 20120193734Abstract: A stress sensor is disclosed herein. The stress sensor includes a plurality of carbon nanotubes in a substrate, and first and second contacts electrically connectable with the plurality of carbon nanotubes. Methods of making and using the stress sensor are also disclosed.Type: ApplicationFiled: April 11, 2012Publication date: August 2, 2012Applicant: Intel CorporationInventors: Mohammad M. Farahani, Vladimir Noveski, Neha M. Patel, Nachiket R. Raravikar
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Publication number: 20120193735Abstract: A microelectromechanical system microphone package structure includes a base plate and a plurality of chips is provided. The plurality of chips are disposed on the base plate, wherein an active area of each of the chips is disposed with a microelectromechanical system microphone structure, each of the active areas comprises a normal line, and the normal lines of the chips are not parallel to each other.Type: ApplicationFiled: April 13, 2012Publication date: August 2, 2012Applicant: UNITED MICROELECTRONICS CORP.Inventor: Li-Che CHEN
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Patent number: 8232614Abstract: A package system includes a first substrate structure including at least one first conductive structure that is disposed over a first substrate. A second substrate structure includes a second substrate. The second substrate structure is bonded with the first substrate structure. The at least one first conductive structure is electrically coupled with the second substrate through at least one germanium-containing layer.Type: GrantFiled: March 8, 2011Date of Patent: July 31, 2012Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Hua Chu, Kuei-Sung Chang, Chung-Hsien Lin, Chia-Ming Hung, Jung-Huei Peng, Yi Heng Tsai, Jiou-Kang Lee
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Patent number: 8232184Abstract: Silicon carbide semiconductor device includes trench, in which connecting trench section is connected to straight trench section. Straight trench section includes first straight trench and second straight trench extending in parallel to each other. Connecting trench section includes first connecting trench perpendicular to straight trench section, second connecting trench that connects first straight trench and first connecting trench to each other, and third connecting trench that connects second straight trench and first connecting trench to each other. Second connecting trench extends at 30 degrees of angle with the extension of first straight trench. Third connecting trench extends at 30 degrees of angle with the extension of second straight trench. A manufacturing method according to the invention for manufacturing a silicon carbide semiconductor device facilitates preventing defects from being causes in a silicon carbide semiconductor device during the manufacture thereof.Type: GrantFiled: December 1, 2009Date of Patent: July 31, 2012Assignee: Fuji Electric Co., Ltd.Inventors: Yasuyuki Kawada, Takeshi Tawara
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Publication number: 20120187507Abstract: A bulk-acoustic-mode MEMS resonator has a first portion with a first physical layout, and a layout modification feature. The resonant frequency is a function of the physical layout, which is designed such that the frequency variation is less than 150 ppm for a variation in edge position of the resonator shape edges of 50 nm. This design combines at least two different layout features in such a way that small edge position variations (resulting from uncontrollable process variation) have negligible effect on the resonant frequency.Type: ApplicationFiled: April 7, 2010Publication date: July 26, 2012Applicant: NXP B.V.Inventors: Joep J.M. Bontemps, Jan Jacob Koning, Casper van der Avoort, Jozef Thomas Martinus van Beek
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Publication number: 20120187509Abstract: A contact arrangement for establishing a spaced, electrically conducting connection between a first wafer and a second wafer includes an electrical connection contact, a passivation layer on the electrical connection contact, and a dielectric spacer layer arranged on the passivation layer, wherein the contact arrangement is arranged at least on one of the first wafer and the second wafer, wherein the contact arrangement comprises trenches at least partly filled with a first material capable of forming a metal-metal connection, wherein the trenches are continuous trenches from the dielectric spacer layer through the passivation layer as far as the electrical connection contact, and wherein the first material is arranged in the trenches from the electrical connection contact as far as the upper edge of the trenches.Type: ApplicationFiled: September 15, 2009Publication date: July 26, 2012Applicant: Robert Bosch GmbHInventors: Knut Gottfried, Maik Wiemer, Axel Franke, Achim Trautmann, Ando Feyh, Sonja Knies, Joerg Froemel
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Publication number: 20120187508Abstract: A method for forming a capacitive micromachined ultrasonic transducer (CMUT) includes forming multiple CMUT elements in a first semiconductor-on-insulator (SOI) structure. Each CMUT element includes multiple CMUT cells. The first SOI structure includes a first handle wafer, a first buried layer, and a first active layer. The method also includes forming a membrane over the CMUT elements and forming electrical contacts through the first handle wafer and the first buried layer. The electrical contacts are in electrical connection with the CMUT elements. The membrane could be formed by bonding a second SOI structure to the first SOI structure, where the second SOI structure includes a second handle wafer, a second buried layer, and a second active layer. The second handle wafer and the second buried layer can be removed, and the membrane includes the second active layer.Type: ApplicationFiled: March 13, 2012Publication date: July 26, 2012Applicant: Texas Instruments IncorporatedInventors: Steven J. Adler, Peter Johnson, Gokhan Percin, Shahram Mostafazadeh
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Patent number: 8227879Abstract: Systems and methods for mounting inertial sensors on a board. On a wafer containing one or more sensor packages having a substrate layer, a sensor layer and an insulator layer located between the sensor layer and the substrate layer, a V-groove is anisotropically etched into one of the substrate layer. The substrate layer is in the 100 crystal plane orientation. The sensor package is then separated from the wafer. Then, a surface of the substrate layer formed by the etching is attached to a board. In one example, three sensor packages are mounted to the board so that their sense axis are perpendicular to each other.Type: GrantFiled: July 29, 2010Date of Patent: July 24, 2012Assignee: Honeywell International Inc.Inventor: Mark Eskridge
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Publication number: 20120182594Abstract: A microelectromechanical system (MEMS) device, method of operating the MEMS device, and a method of forming the MEMS device are provided. The MEMS device includes a positioning mechanism and a locking mechanism. The positioning mechanism includes a first arm structure having a first surface and a second surface; a second arm structure having a first surface and a second surface; wherein the first surface of the first arm structure faces the first surface of the second arm structure. The positioning mechanism also includes a first actuator disposed adjacent to the second surface of the first arm structure facing away from the second arm structure; and a second actuator disposed adjacent to the second surface of the second arm structure facing away from the first arm structure.Type: ApplicationFiled: June 11, 2009Publication date: July 19, 2012Applicant: Agency for Science, Technology and ResearchInventors: Qingxin Zhang, Yu Du, Chee Wei Tan
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Publication number: 20120181639Abstract: A cost-effective and space-saving component that includes a MEMS element and an access channel to the membrane structure of the MEMS element. The MEMS element is mounted by the rear side of the component on a substrate and is at least partially embedded in a molding compound. An access port is formed in the molding compound. The component also includes at least one semiconductor component having at least one through hole that is integrated in the molding compound above the MEMS element at a distance from the membrane structure, so that a hollow space is located between the semiconductor component and the membrane structure. The access port in the molding compound opens into the through hole of the semiconductor component and, together with this and the hollow space between the further semiconductor component and the membrane structure, forms the access channel to the membrane structure.Type: ApplicationFiled: December 22, 2011Publication date: July 19, 2012Inventors: Ricardo Ehrenpfordt, Ulrike Scholz
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Publication number: 20120181637Abstract: A method for forming a semiconductor device includes forming a substrate, forming a moveable member of bulk silicon and forming a first dimple structure on a first surface of the moveable member, where the first surface faces the substrate.Type: ApplicationFiled: January 13, 2011Publication date: July 19, 2012Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chia-Pao Shu, Chia-Hua Chu
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Publication number: 20120181638Abstract: The present invention generally relates to methods for producing MEMS or NEMS devices and the devices themselves. A thin layer of a material having a lower recombination coefficient as compared to the cantilever structure may be deposited over the cantilever structure, the RF electrode and the pull-off electrode. The thin layer permits the etching gas introduced to the cavity to decrease the overall etchant recombination rate within the cavity and thus, increase the etching rate of the sacrificial material within the cavity. The etchant itself may be introduced through an opening in the encapsulating layer that is linearly aligned with the anchor portion of the cantilever structure so that the topmost layer of sacrificial material is etched first. Thereafter, sealing material may seal the cavity and extend into the cavity all the way to the anchor portion to provide additional strength to the anchor portion.Type: ApplicationFiled: January 13, 2012Publication date: July 19, 2012Inventors: Mickael Renault, Joseph Damian Gordon Lacey, Vikram Joshi, Thomas L. Maguire
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Publication number: 20120176609Abstract: This document describes a wireless sensor comprising a MEMS resonator and an antenna directly matched thereto. Also a method of reading the wireless sensor is described. The method comprises illuminating the wireless sensor with electromagnetic energy at a first and second frequencies and receiving an intermodulation signal emitted by the wireless sensor in response to said electromagnetic energy at the first and second frequencies.Type: ApplicationFiled: September 10, 2010Publication date: July 12, 2012Applicant: TEKNOLOGIAN TUTKIMUSKESKUS VTTInventors: Heikki Seppä, Ville Viikari
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Publication number: 20120175715Abstract: Encapsulated MEMS switches are disclosed along with methods of manufacturing the same. A non-polymer based sacrificial layer is used to form the actuation member of the MEMS switch while a polymer based sacrificial layer is used to form the enclosure that encapsulates the MEMS switch. The first non-polymer based sacrificial layer allows for highly reliable MEMS switches to be manufactured while also protecting the MEMS switch from carbon contamination. The polymer based sacrificial layer allows for the manufacture of more spatially efficient encapsulated MEMS switches.Type: ApplicationFiled: January 11, 2012Publication date: July 12, 2012Applicant: RF Micro Devices, Inc.Inventors: Jonathan Hale Hammond, Julio Costa
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Publication number: 20120168883Abstract: A RF MEMS switch includes a substrate, a first electrode, a first insulating layer, a second insulating layer, a second electrode and a movable electrode. The first electrode is disposed on the substrate. The first insulating layer covers the first electrode. The second insulating layer covers a portion of the substrate. The second electrode is disposed in the second insulating layer and is located at a plane different from a plane of the first electrode. The movable electrode is partially disposed on a surface of the second insulating layer, and extends over the first electrode and the second electrode. A portion of the movable electrode not disposed on the surface of the second insulating layer is a movable portion. The second insulating layer has a gap exposing a space between the movable portion and the first insulating layer and a space between the movable portion and the second electrode.Type: ApplicationFiled: March 16, 2011Publication date: July 5, 2012Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Jun-Kai Mao, Chiung-I Lee
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Publication number: 20120168884Abstract: A method of packaging a pressure sensor die includes providing a lead frame having a die pad and lead fingers that surround the die pad. A tape is attached to a first side of the lead frame. A pressure sensor die is attached to the die pad on a second side of the lead frame and bond pads of the die are connected to the lead fingers. An encapsulant is dispensed onto the second side of the lead frame and covers the lead fingers and the electrical connections thereto. A gel is dispensed onto a top surface of the die and covers the die bond pads and the electrical connections thereto. A lid is attached to the lead frame and covers the die and the gel, and sides of the lid penetrate the encapsulant.Type: ApplicationFiled: November 10, 2011Publication date: July 5, 2012Applicant: FREESCALE SEMICONDUCTOR, INCInventors: Jinzhong Yao, Wai Yew Lo, Lan Chu Tan, Xuesong Xu
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Patent number: 8212326Abstract: A manufacturing method for a micromechanical component having a thin-layer capping.Type: GrantFiled: July 13, 2010Date of Patent: July 3, 2012Assignee: Robert Bosch GmbHInventor: Ando Feyh
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Patent number: 8212324Abstract: A Micro Electro Mechanical Systems resonance device includes a substrate, and an input electrode, connected to an alternating current source having an input frequency. The device also includes an output electrode, and at least one anchoring structure, connected to the substrate. The device further includes a vibratile structure connected to an anchoring structure by at least one junction, having a natural acoustic resonant frequency. The vibration under the effect of the input electrode, when it is powered, generates, on the output electrode, an alternating current wherein the output frequency is equal to the natural frequency. The vibratile structure and/or the anchoring structure includes a periodic structure. The periodic structure includes at least first and second zones different from each other, and corresponding respectively to first and second acoustic propagation properties.Type: GrantFiled: April 6, 2009Date of Patent: July 3, 2012Assignee: STMicroelectronics SAInventors: Gregory Caruyer, Karim Segueni, Pascal Ancey, Bertrand Dubus
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Publication number: 20120161254Abstract: A method for providing a semiconductor structure includes forming a sacrificial structure by etching a plurality of trenches from a first main surface of a substrate. The method further includes covering the plurality of trenches at the first main surface with a cover material to define cavities within the substrate, removing a part of the substrate from a second main surface opposite to the first main surface to a depth at which the plurality of trenches are present, and etching away the sacrificial structure from the second main surface of the substrate.Type: ApplicationFiled: December 22, 2010Publication date: June 28, 2012Applicant: Infineon Technologies AGInventors: Thoralf Kautzsch, Stefan Kolb, Boris Binder, Bernd Foeste, Marco Mueller
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Publication number: 20120161255Abstract: Embodiments of the invention provide methods of sealing a micro electromechanical systems (MEMS) cavity and devices resulting therefrom. A first aspect of the invention provides a method of sealing a micro electromechanical systems (MEMS) cavity in a substrate, the method comprising: forming in a substrate a cavity filled with a sacrificial material; forming a lid over the cavity; forming at least one vent hole over the lid extending to the cavity; removing the sacrificial material from the cavity; depositing a first material onto the lid such that a size of at least one vent hole at a surface of the substrate is reduced but not sealed; and depositing a second material onto the first material to seal the at least one vent hole, wherein a MEMS cavity within the substrate and beneath the at least one vent hole substantially retains a pressure at which the at least one vent hole is sealed by the second material.Type: ApplicationFiled: December 28, 2010Publication date: June 28, 2012Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Thomas H. Gabert, Joseph P. Hasselbach, Anthony K. Stamper
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Publication number: 20120161257Abstract: Embodiments show a method for fabricating a cavity structure, a semiconductor structure, a cavity structure for a semiconductor device and a semiconductor microphone fabricated by the same. In some embodiments the method for fabricating a cavity structure comprises providing a first layer, depositing a carbon layer on the first layer, covering at least partially the carbon layer with a second layer to define the cavity structure, removing by means of dry etching the carbon layer between the first and second layer so that the cavity structure is formed.Type: ApplicationFiled: December 27, 2010Publication date: June 28, 2012Applicant: Infineon Technologies AGInventors: Wolfgang Friza, Thomas Grille, Klaus Muemmler, Guenter Zieger, Carsten Ahrens
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Publication number: 20120161259Abstract: A package is provided. The package has a substrate and a cover. A MEMS die is provided having a diaphragm. A CMOS die is provided wherein at least a portion of the CMOS die is positioned between the diaphragm and the substrate.Type: ApplicationFiled: October 21, 2011Publication date: June 28, 2012Inventors: Peter V. Loeppert, Daniel Giesecke, Anthony Minervini, Jeffrey Niew, Lawrence Grunert
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Publication number: 20120161256Abstract: There is described a flow sensing device having a semiconductor chip with a flow channel integrated therein and a sensing element positioned in the flow channel, and a package base attached to the semiconductor chip and allowing access to the two passage-openings of the flow channel from opposite sides of the package base.Type: ApplicationFiled: March 10, 2010Publication date: June 28, 2012Inventors: Oleg Grudin, Gennadiy Frolov, Leslie M. Landsberger, Saed Salman
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Publication number: 20120161258Abstract: A package is provided. The package has a substrate and a cover. A MEMS die is provided having a diaphragm. A CMOS die is provided wherein at least a portion of the CMOS die is positioned between the diaphragm and the substrate.Type: ApplicationFiled: December 28, 2010Publication date: June 28, 2012Inventors: Peter V. Loeppert, Jeffery Niew, Anthony Minervini, Daniel Giesecke
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Publication number: 20120161147Abstract: An example sensor that includes a first Schottky diode, a second Schottky diode and an integrated circuit. The sensor further includes a voltage generator that generates a first voltage across the first Schottky diode and a second voltage across the second Schottky diode. When the first Schottky diode and the second Schottky diode are subjected to different strain, the integrated circuit measures the values of the currents flowing through the first Schottky diode and the second Schottky diode to determine the strain on an element where the first Schottky diode and the second Schottky diode are attached.Type: ApplicationFiled: November 30, 2011Publication date: June 28, 2012Applicant: HONEYWELL INTERNATIONAL INC.Inventors: Viorel Georgel DUMITRU, Mihai Brezeanu, Stefan Dan Costea, Ion Georgescu, Viorel Avramescu, Bogdan-Catalin Serban
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Publication number: 20120161093Abstract: A via-configurable circuit block may contain chains of p-type and n-type transistors that may or may not be interconnected by means of configurable vias. Configurable vias may also be used to connect various transistor terminals to a ground line, a power line and/or to various terminals that may provide connections outside of the circuit block.Type: ApplicationFiled: October 12, 2011Publication date: June 28, 2012Applicant: eASIC CorporationInventors: Alexander Andreev, Sergey Gribok, Ranko Scepanovic
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Publication number: 20120161260Abstract: Measures are introduced to make possible a low-cost packaging of sensor chips having a media access. For this purpose, the sensor chip is first mounted on a substrate and is contacted. The sensor chip is then at least partially embedded in a molding compound. Finally, at least one portion of the media access is produced by the subsequent structuring of the molding compound.Type: ApplicationFiled: December 22, 2011Publication date: June 28, 2012Inventors: Uwe HANSEN, Lutz Rauscher
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Publication number: 20120153409Abstract: Ultra-thin semiconductor devices, including piezo-resistive sensing elements can be formed a wafer stack that facilitates handling many thin device dice at a wafer level. Three embodiments are provided to form the thin dice in a wafer stack using three different fabrication techniques that include anodic bonding, adhesive bonding and fusion bonding. A trench is etched around each thin die to separate the thin die from others in the wafer stack. A tether layer, also known as a tether, is used to hold thin dice or dice in a wafer stack. Such as wafer stack holds many thin dice together at a wafer level for handling and enables easier die picking in packaging processes.Type: ApplicationFiled: February 24, 2012Publication date: June 21, 2012Applicant: CONTINENTAL AUTOMOTIVE SYSTEMS, INC.Inventors: Xiaoyi Ding, Jeffrey J. Frye, Gregory A. Miller
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Publication number: 20120153408Abstract: A method of forming a MEMS device by encapsulating a MEMS element with a sacrificial layer portion deposited over a substrate arrangement, the portion defining a cavity for the MEMS element, forming at least one strip of a further sacrificial material extending outwardly from the portion, forming a cover layer portion over the sacrificial layer portion, the cover layer portion terminating on the at least one strip, removing the sacrificial layer portion and the at least one strip, the removal of the at least one strip defining at least one vent channel extending laterally underneath the cover layer portion and sealing the at least one vent channel. A device including such a packaged micro electro-mechanical structure.Type: ApplicationFiled: December 14, 2011Publication date: June 21, 2012Applicant: NXP B.V.Inventors: Michael Antoine Armand in 't Zandt, Wim van den Einden, Harold Roosen
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Publication number: 20120153410Abstract: A semiconductor chip includes a semiconductor chip body having a first surface and a second surface that faces away from the first surface, and including a plurality of bonding pads disposed on the first surface. Also, the semiconductor chip includes a distance maintaining member attached to the first surface of the semiconductor chip body and electrically connected with a circuit pattern.Type: ApplicationFiled: September 23, 2011Publication date: June 21, 2012Applicant: HYNIX SEMICONDUCTOR INC.Inventor: Kwon Whan HAN
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Patent number: 8203190Abstract: A MEMS device includes a chip carrier having an acoustic port extending from a first surface to a second surface of the chip carrier, a MEMS die disposed on the chip carrier to cover the acoustic port at the first surface of the chip carrier, and an enclosure bonded to the chip carrier and encapsulating the MEMS die.Type: GrantFiled: June 28, 2010Date of Patent: June 19, 2012Assignee: Akustica, Inc.Inventors: Jason P. Goodelle, Kaigham J. Gabriel
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Publication number: 20120146163Abstract: A microphone package structure is provided, including an integrated circuit (IC) structure and a microphone structure disposed thereover and electrically connected therewith. The IC structure includes a first semiconductor substrate with opposite first and second surfaces, and a first through hole disposed in and through the first semiconductor substrate. The microphone structure includes: a second semiconductor substrate with opposite third and fourth surfaces, wherein the third surface faces to the second surface of the first semiconductor substrate; a second through hole disposed in and through the second semiconductor substrate; an acoustic sensing device embedded in the second through hole and adjacent to the third surface; and a sealing layer disposed over the fourth surface of the second semiconductor substrate, defining a back chamber with the sealing layer, wherein the first through hole allows acoustic pressure waves to penetrate and pass therethrough to the acoustic sensing device.Type: ApplicationFiled: August 9, 2011Publication date: June 14, 2012Applicant: Industrial Technology Research InstituteInventors: Tzong-Che Ho, Chin-Fu Kuo, Hsin-Li Lee, Yao-Jung Lee, Li-Chi Pan
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Patent number: 8198690Abstract: Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a first semiconductive material and at least one trench disposed in the first semiconductive material, the at least one trench having a sidewall. An insulating material layer is disposed over an upper portion of the sidewall of the at least one trench in the first semiconductive material and over a portion of a top surface of the first semiconductive material proximate the sidewall. A second semiconductive material or a conductive material is disposed within the at least one trench and at least over the insulating material layer disposed over the portion of the top surface of the first semiconductive material proximate the sidewall.Type: GrantFiled: August 10, 2010Date of Patent: June 12, 2012Assignee: Infineon Technologies AGInventors: Florian Schoen, Wolfgang Raberg, Bernhard Winkler, Werner Weber
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Patent number: 8198689Abstract: Proposed is a package structure having a micro-electromechanical (MEMS) element, including a chip having a plurality of electrical connecting pads and a MEMS element formed thereon; a lid disposed on the chip for covering the MEMS element; a stud bump disposed on each of the electrical connecting pads; an encapsulant formed on the chip with part of the stud bumps being exposed from the encapsulant; and a metal conductive layer formed on the encapsulant and connected to the stud bumps. The invention is characterized by completing the packaging process on the wafer directly to enable thinner and cheaper package structures to be fabricated within less time. This invention further provides a method for fabricating the package structure as described above.Type: GrantFiled: April 28, 2010Date of Patent: June 12, 2012Assignee: Siliconware Precision Industries Co., Ltd.Inventors: Chang-Yueh Chan, Chien-Ping Huang, Chun-Chi Ke, Chun-An Huang, Chih-Ming Huang
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Publication number: 20120139067Abstract: A method of packaging a pressure sensor die that does not use pre-molded lead frames. Instead a lead frame array is attached to a tape and a non-conductive material is deposited on the lead frames. The non-conductive material is cured and the tape is removed. Pressure sensor dies then are attached to respective die pads of the lead frames and electrically connected to lead frame leads with bond wires. A gel is dispensed onto a top surface of the pressure sensor dies and then a lid is attached to each of the lead frames to cover the pressure sensor dies. The lead frames are singulated to form individual pressure sensor packages.Type: ApplicationFiled: September 28, 2011Publication date: June 7, 2012Applicant: FREESCALE SEMICONDUCTOR, INCInventors: WAI YEW LO, Lan Chu Tan, Jinzhong Yao
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Publication number: 20120139064Abstract: A capacitance type gyro sensor includes a semiconductor substrate, a first electrode integrally including a first base portion and first comb tooth portions and a second electrode integrally including a second base portion and second comb tooth portions, formed by processing the surface portion of the semiconductor substrate. The first electrode has first drive portions that extend from opposed portions opposed to the respective second comb tooth portions on the first base portion toward the respective second comb tooth portions. The second electrode has second drive portions formed on the tip end portions of the respective second comb tooth portions opposed to the respective first drive portions. The first drive portions and the second drive portions engage with each other at an interval like comb teeth.Type: ApplicationFiled: October 14, 2011Publication date: June 7, 2012Applicant: ROHM CO., LTD.Inventors: Goro Nakatani, Toma Fujita
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Publication number: 20120139065Abstract: A MEMS manufacturing method and device in which a spacer layer is provided over a side wall of at least one opening in a structural layer which will define the movable MEMS element. The opening extends below the structural layer. The spacer layer forms a side wall portion over the side wall of the at least one opening and also extends below the level of the structural layer to form a contact area.Type: ApplicationFiled: December 6, 2011Publication date: June 7, 2012Applicant: NXP B.V.Inventors: Jozef Thomas Martinus van Beek, Klaus Reimann, Remco Henricus Wilhelmus Pijnenburg, Twan Van Lippen
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Publication number: 20120139066Abstract: Disclosed is a micro electro mechanical system (MEMS) microphone including: a substrate; an acoustic chamber formed by processing the substrate; a lower electrode formed on the acoustic chamber and fixed to the substrate; a diaphragm formed over the lower electrode so as to be spaced apart from the lower electrode by a predetermined interval; and a diaphragm discharge hole formed at a central portion of the diaphragm. According to an exemplary embodiment of the present disclosure, attenuation generated by an air layer between the diaphragm and the lower electrode in a MEMS microphone may be effectively reduced, thereby making it possible to obtain high sensitivity characteristics and reduce a time and a cost required for removing a sacrificial layer between the diaphragm and the lower electrode.Type: ApplicationFiled: October 4, 2011Publication date: June 7, 2012Applicant: Electronics and telecommunications Research InstituteInventors: Chang Han JE, Jaewoo Lee, Woo Seok Yang, Jongdae Kim
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Publication number: 20120139068Abstract: A method for forming a stacked integrated circuit package of primary dies on a carrier die, includes forming electrically conductive pillars at connection pads defined on an active face of a carrier wafer incorporating carrier integrated circuits, the electrically conductive pillars providing electrical connections to said carrier integrated circuits; attaching primary dies to the active face of the carrier wafer, each supporting electrically conductive pillars at connection pads defined on an active face of the primary die; encapsulating the active face of the carrier wafer and the primary dies attached thereto in an insulating material; producing a wafer package by removing a thickness of the insulating layer sufficient to expose the electrically conductive pillars; and singulating the carrier wafer to form stacked integrated circuit packages, each package comprising at least one primary die on a carrier die.Type: ApplicationFiled: November 28, 2011Publication date: June 7, 2012Applicant: CAMBRIDGE SILICON RADIO LIMITEDInventor: Simon Jonathan Stacey