Abstract: An unattached, contained semiconductor device includes a semiconductor die, for example a MEMS pressure sensor die. The semiconductor die is unattached from the interior cavity of a surrounding containment body in that the semiconductor die is free of adherence to the containment body to mitigate packaging stress and strain between the containment body and the semiconductor die.

Abstract: This document discusses, among other things, a conductive frame, a silicon die coupled to the conductive frame, the silicon die including a vibratory diaphragm, the die having a silicon die top opposite a silicon die bottom, with a silicon die port extending through the silicon die to the vibratory diaphragm, with a silicon die terminal in electrical communication with the conductive frame and an insulator affixed to the conductive frame and the silicon die, with the insulator extending through interstices in the conductive frame to a conductive frame bottom of the conductive frame, and around an exterior of the silicon die to the silicon die top, with the insulator physically affixed to the silicon die and to the conductive frame, with the silicon die port exposed and with a conductive frame terminal disposed at the conductive frame bottom in electrical communication with the silicon die terminal.

Abstract: Embodiments relate to integrated sonic sensors having a transmitter, a receiver and driver electronics integrated in a single, functional package. In one embodiment, a piezoelectric signal transmitter, a silicon microphone receiver and a controller/amplifier chip are concomitantly integrated in a semiconductor housing. The semiconductor housing, in embodiments, is functional in that at least a portion of the housing can comprise the piezoelectric element of the transmitter, with an inlet aperture opposite the silicon microphone receiver.

Abstract: A MEMS differential pressure sensing element is provided by two separate silicon dies attached to opposite sides of a silicon or glass spacer. The spacer is hollow. If the spacer is silicon, the dies are preferably attached to the hollow spacer using silicon-to-silicon bonding provided in part by silicon oxide layers. If the spacer is glass, the dies can be attached to the hollow spacer using anodic bonding. Conductive vias extend through the layers and provide electrical connections between Wheatstone bridge circuits formed from piezoresistors in the silicon dies.

Abstract: Capacitive micromachined ultrasonic transducers (CMUTs) in permanent contact mode are provided. Such a CMUT always has its plate in contact with the substrate, even for zero applied electrical bias. This contact is provided by the pressure difference between the environment, and the pressure of the evacuated region between the CMUT plate and substrate. Due to this permanent contact, the electric field in the gap for a given DC bias voltage will be larger, which provides improved coupling efficiency at lower DC bias voltages. Furthermore, in an environment with high and varying pressure, the plate will not shift between the conventional mode and the collapsed mode, but will only be pushed down with varying contact radius. In some embodiments, an electrode shaped as an annulus is employed, so that only the active vibrating part of the CMUT plate sees the applied DC and AC voltages.

Abstract: A compliant monopolar micro device transfer head array and method of forming a compliant monopolar micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array including a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect, and each silicon electrode is deflectable into a cavity between the base substrate and the silicon electrode. A dielectric layer covers a top surface of each mesa structure.

Abstract: Provided is an acoustic sensor. The acoustic sensor includes: a substrate including sidewall portions and a bottom portion extending from a bottom of the sidewall portions; a lower electrode fixed at the substrate and including a concave portion and a convex portion, the concave portion including a first hole on a middle region of the bottom, the convex portion including a second hole on an edge region of the bottom; diaphragms facing the concave portion of the lower electrode, with a vibration space therebetween; diaphragm supporters provided on the lower electrode at a side of the diaphragm and having a top surface having the same height as the diaphragm; and an acoustic chamber provided in a space between the bottom portion and the sidewall portions below the lower electrode.

Abstract: A compliant bipolar micro device transfer head array and method of forming a compliant bipolar micro device transfer array from an SOI substrate are described. In an embodiment, a compliant bipolar micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include first and second silicon interconnects, and first and second arrays of silicon electrodes electrically connected with the first and second silicon interconnects and deflectable into one or more cavities between the base substrate and the silicon electrodes.

Abstract: Embodiments relate to micromachine structures. In one embodiment, a micromachine structure includes a first electrode, a second electrode, and a sensing element. The sensing element is mechanically movable and is disposed intermediate the first and second electrodes and adapted to oscillate between the first and second electrodes. Further, the sensing element includes a FinFET structure having a height and a width, the height being greater than the width.

Abstract: A device includes a micro-electro-mechanical system (MEMS) device, which includes a movable element and a fixed element. The movable element and the fixed element form two capacitor plates of a capacitor, with an air-gap between the movable element and the fixed element acting as a capacitor insulator of the capacitor. At least one of the movable element and the fixed element has a rugged surface.

Abstract: A capacitive chemical sensor, along with methods of making and using the sensor are provided. The sensors described herein eliminate undesirable capacitance by etching away the substrate underneath the capacitive chemical sensor, eliminating most of the substrate capacitance and making changes in the chemical-sensitive layer capacitance easier to detect.

Abstract: A microelectromechanical microphone comprises a shell body, a microelectromechanical microphone chip and an integrated circuit. The shell body having a cavity and an opening, sound from outside enters into the cavity from the opening. The microelectromechanical microphone chip and the integrated circuit are disposed on a circuit layout inside the cavity. A filter is integrated with the microelectromechanical microphone chip at an appropriate location. Sound entered from the opening into the cavity is received by the microelectromechanical microphone chip, then the sound or audio signals are converted to electrical signals through the filter and the integrated circuit, to be transmitted to external electronic devices.

Abstract: A micro-electromechanical system (MEMS) device includes a housing and a base. The base includes a port opening extending therethrough and the port opening communicates with the external environment. The MEMS die is disposed on the base and over the opening. The MEMS die includes a diaphragm and a back plate and the MEMS die, the base, and the housing form a back volume. At least one vent extends through the MEMS die and not through the diaphragm. The at least one vent communicates with the back volume and the port opening and is configured to allow venting between the back volume and the external environment.

Abstract: The present disclosure concerns a magnetic random access memory (MRAM) cell comprising a magnetic tunnel junction comprising a synthetic storage layer; a sense layer having a sense magnetization that is reversible; and a tunnel barrier layer between the sense layer and the storage layer; wherein a net local magnetic stray field couples the storage layer with the sense layer; and wherein the net local magnetic stray field being such that the net local magnetic stray field coupling the sense layer is below 50 Oe. The disclosure also pertains to a method for writing and reading the MRAM cell. The disclosed MRAM cell can be written and read with lower consumption in comparison to conventional MRAM cells.

Abstract: An encapsulation structure for silicon pressure sensor including a case and a stem is proposed. The case and the stem are connected with a cavity therebetween. A sealing pad and a pressure sensitive silicon chip are provided in the said cavity. The sealing pad is placed under the silicon chip and the silicon chip is connected to the external circuit through the bonding pad. This invention, with the anti-overloading ability, simplifies the encapsulation structure and manufacturing process which greatly reduces the cost of material and process.

Abstract: According to one embodiment, a magnetoresistive effect element includes a first magnetic film having magnetic anisotropy and an invariable magnetization direction in a direction perpendicular to a film plane, a second magnetic film having magnetic anisotropy and a variable magnetization direction in the direction perpendicular to the film plane, and a nonmagnetic film between the first magnetic film and the second magnetic film. At least one of the first and second magnetic films includes a first magnetic layer. The first magnetic layer includes a rare earth metal, a transition metal, and boron.

Abstract: In an acoustic sensor, a conductive vibrating membrane and a fixed electrode plate are disposed above a silicon substrate with an air gap provided therebetween, and the substrate has an impurity added to a surface thereof. A microphone includes an acoustic transducer; and an acquiring section that acquires a change in pressure as detected by the acoustic transducer. A method for manufacturing an acoustic transducer including a semiconductor substrate, a vibrating membrane, which is conductive, and a fixed electrode plate and detecting a pressure according to a change in capacitance between the vibrating membrane and the fixed electrode plate, the method includes an impurity adding step of adding an impurity to a surface of the semiconductor substrate; and a forming step of forming the vibrating membrane and the fixed electrode plate above the semiconductor substrate to which the impurity has been added.

Abstract: A method for fabricating a MEMS resonator is provided. A stacked main body including a silicon substrate, a plurality of metallic layers and an isolation layer is formed and has a first etching channel extending from the metallic layers into the silicon substrate. The isolation layer is filled in the first etching channel. The stacked main body also has a predetermined suspended portion. Subsequently, a portion of the isolation layer is removed so that a second etching channel is formed and the remained portion of the isolation layer covers an inner sidewall of the first etching channel. Afterwards, employing the isolation layer that covers the inner sidewall of the first etching channel as a mask, an isotropic etching process through the second etching channel is applied to the silicon substrate, thereby forming the MEMS resonator suspending above the silicon substrate. A micro electronic device is also provided.

Abstract: The present invention relates to the field of electronic devices and their associated driver and/or controller integrated circuits and in particular to the mechanical packaging of electronic devices and to the packaging of electronic devices and their associated driver and/or controller integrated circuits.

Abstract: The integrated circuit/transducer device of the preferred embodiment includes a substrate, a complementary-metal-oxide-semiconductor (CMOS) circuit that is fabricated on the substrate, and a capacitive micromachined ultrasonic transducer (cMUT) element that is also fabricated on the substrate. The CMOS circuit and cMUT element are fabricated during the same foundry process and are connected. The cMUT includes a lower electrode, an upper electrode, a membrane structure that support the upper electrode, and a cavity between the upper electrode and lower electrode.

Abstract: A package structure having MEMS elements includes: a wafer having MEMS elements, electrical contacts and second alignment keys; a plate disposed over the MEMS elements and packaged airtight; transparent bodies disposed over the second alignment keys via an adhesive; an encapsulant disposed on the wafer to encapsulate the plate, the electrical contacts and the transparent bodies; bonding wires embedded in the encapsulant and each having one end connecting a corresponding one of the electrical contacts and the other end exposed from a top surface of the encapsulant; and metal traces disposed on the encapsulant and electrically connected to the electrical contacts via the bonding wires. The present invention eliminates the need to form through holes in a silicon substrate as in the prior art so as to reduce fabrication costs. Further, the present invention accomplishes wiring processes by using a common alignment device to thereby reduce equipment costs.

Abstract: [Subject] To provide a pressure sensor capable of implementing cost reduction and miniaturization. [Solving Means] A pressure sensor 1 includes a silicon substrate 2 provided therein with a reference pressure chamber 8, a diaphragm 10, consisting of part of the silicon substrate 2, formed on a surface layer portion of the silicon substrate 2 to partition a reference pressure chamber 8, and an etching stop layer 9 formed on a lower surface of the diaphragm 10 facing the reference pressure chamber 8. A through-hole 11 communicating with the reference pressure chamber 8 is formed on the diaphragm 10, and a filler 13 is arranged in the through-hole 11.

Abstract: A test structure for measuring a Micro-Electro-Mechanical System (MEMS) cavity height structure and calibration method. The method includes forming a sacrificial cavity material over a plurality of electrodes and forming an opening into the sacrificial cavity material. The method further includes forming a transparent or substantially transparent material in the opening to form a transparent or substantially transparent window. The method further includes tuning a thickness of the sacrificial cavity material based on measurements obtained through the transparent or substantially transparent window.

Abstract: Hot-melt sealing glass compositions that include one or more glass frits dispersed in a polymeric binder system. The polymeric binder system is a solid at room temperature, but melts at a temperature of from about 35° C. to about 90° C., thereby forming a flowable liquid dispersion that can be applied to a substrate (e.g., a cap wafer and/or a device wafer of a MEMS device) by screen printing. Hot-melt sealing glass compositions according to the invention rapidly re-solidify and adhere to the substrate after being deposited by screen printing. Thus, they do not tend to spread out as much as conventional solvent-based glass frit bonding pastes after screen printing. And, because hot-melt sealing glass compositions according to the invention are not solvent-based systems, they do not need to be force dried after deposition.

Abstract: A micro electrical mechanical system includes a membrane structure and a backplate structure. The backplate structure includes a backplate material and at least one pre-tensioning element mechanically connected to the backplate material. The at least one pre-tensioning element causes a mechanical tension on the backplate material for a bending deflection of the backplate structure in a direction away from the membrane structure.

Abstract: A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.

Abstract: A MEMS device includes a substrate. The substrate has a plurality of through holes in the substrate within a diaphragm region and optionally an indent space from the second surface at the diaphragm region. A first dielectric structural layer is then disposed over the substrate from the first surface, wherein the first dielectric structural layer has a plurality of openings corresponding to the through holes, wherein each of the through holes remains exposed by the first dielectric structural layer. A second dielectric structural layer with a chamber is disposed over the first dielectric structural layer, wherein the chamber exposes the openings of the first dielectric structural layer and the through holes of the substrate to connect to the indent space. A MEMS diaphragm is embedded in the second dielectric structural layer above the chamber, wherein an air gap is formed between the substrate and the MEMS diaphragm.

Abstract: A MEMS device, such as a microphone, uses a fixed perforated plate. The fixed plate comprises an array of holes across the plate area. At least a set of the holes adjacent the outer periphery comprises a plurality of rows of elongate holes, the rows at different distances from the periphery. This design improves the mechanical robustness of the membrane and can additionally allow tuning of the mechanical behaviour of the plate.

Abstract: The MEMS sensor according to the present invention includes a diaphragm.

Abstract: A micro electrical-mechanical system (MEMS) device comprises a suspended thin film microstructure which includes an anchoring portion adhered to the top surface of the substrate and a suspended portion above the top surface of the substrate. Having a base plane configured in parallel to the substrate, the suspended portion further includes a first recess portion spaced at a first vertical clearance with the substrate, the first vertical clearance being configured differentially smaller than a base clearance of the suspended portion outside the first recess portion.

Abstract: This disclosure provides apparatuses, systems and methods for manufacturing electromechanical systems (EMS) devices having a means for removing and/or mitigating unwanted environmental stresses from within the device. In some implementations, an integrated getter layer that is exposed to an internal cavity of the electromechanical systems device can be configured to help remove and/or mitigate unwanted moisture from within an EMS device.

Abstract: Methods of anchoring components of a Micro-Electro-Mechanical Systems (MEMS) device to a substrate. An exemplary embodiment has a trace anchor bonded to a substrate, a device anchor bonded to the substrate, and an anchor flexure configured to flexibly couple the trace anchor and the device anchor to substantially prevent transmission of a stress induced in the trace anchor from being transmitted to the device anchor.

Abstract: The present invention provides a DC high voltage converter having an oscillator driver, main switch array and topological enhanced capacitors. The switch array utilizes MEM cantilevers and topological capacitors for charge storages for the generation of a high voltage output from a low voltage input.

Abstract: Methods for manufacturing micromachined devices and the devices obtained are disclosed. In one embodiment, the method comprises providing a structural layer comprising an amorphous semiconductor material, forming a shielding layer on a first portion of the structural layer and leaving exposed a second portion of the structural layer, and annealing the second portion using a first fluence. The method further comprises removing the shielding layer, and annealing the first portion and the second portion using a second fluence that is less than half the first fluence. In an embodiment, the device comprises a substrate layer, an underlying layer formed on the substrate layer, and a sacrificial layer formed on only a portion of the underlying layer. The device further comprises a structural layer that is in contact with the underlying layer and comprises a first region annealed using a first fluence and a second region annealed using a second fluence.

Abstract: A piezoresistive pressure sensor is especially suitable for measuring smaller pressures and has a small linearity error. The pressure sensor is manufactured from a BESOI wafer having first and second silicon layers and an oxide layer arranged therebetween. The pressure sensor includes, formed from the first silicon layer of the BESOI wafer, an active layer, in which piezoresistive elements are doped, and, formed from the second silicon layer of the BESOI wafer, a membrane carrier, which externally surrounds a cavity in the second silicon layer, via which a membrane forming region of the active layer and an oxide layer associated therewith are exposed, wherein, in an outer edge of the region of the oxide layer exposed by the cavity, a groove is provided surrounding the region.

Abstract: The present disclosure provides one embodiment of a motion sensor structure. The motion sensor structure includes a first substrate having an integrated circuit formed thereon; a second substrate bonded to the first substrate from a first surface, wherein the second substrate includes a motion sensor formed thereon; and a third substrate bonded to a second surface of the second substrate, wherein the third substrate includes a recessed region aligned with the motion sensor.

Abstract: A method for manufacturing a micromechanical structure includes: forming a first insulation layer above a substrate; forming a first micromechanical functional layer on the first insulation layer; forming multiple first trenches in the first micromechanical functional layer, which trenches extend as far as the first insulation layer; forming a second insulation layer on the first micromechanical functional layer, which second insulation layer fills up the first trenches; forming etch accesses in the second insulation layer, which etch accesses locally expose the first micromechanical functional layer; and etching the first micromechanical functional layer through the etch accesses, the filled first trenches and the first insulation layer acting as an etch stop.

Abstract: A method of packaging a pressure sensing die includes providing a lead frame with lead fingers and attaching the pressure sensing die to the lead fingers such that bond pads of the die are electrically coupled to the lead fingers and a void is formed between the die and the lead fingers. A gel material is dispensed via an underside of the lead frame into the void such that the gel material substantially fills the void. The gel material is then cured and the die and the lead frame are encapsulated with a mold compound. The finished package does not include a metal lid.

Abstract: An piezoelectric electromechanical transistor has first and second terminals formed in a semiconductor region, a gate and a piezoelectric region between the gate and the semiconductor region. The piezoelectric region may be configured to drive the semiconductor region to vibrate in response to a signal applied to the gate. The transistor may be configured to produce a signal at the first terminal at least partially based on vibration of the semiconductor region.

Abstract: The present disclosure provides a method including providing a first substrate; and forming a microelectromechanical system (MEMS) device on a first surface of the first substrate. A bond pad is formed on at least one bonding site on the first surface of the first substrate. The bonding site is recessed from the first surface. Thus, a top surface of the bond pad may lie below the plane of the top surface of the substrate. A device with recessed connective element(s) (e.g., bond pad) is also described. In further embodiments, a protective layer is formed on the recessed connective element during dicing of a substrate.

Abstract: In some examples, a semiconductor package can be configured to electrically couple to a printed circuit board. The semiconductor package can include: (a) a lid having one or more first electrically conductive leads; (b) a base coupled to the lid and having one or more second electrically conductive leads electrically coupled to the one or more first electrically conductive leads; (c) one or more first semiconductor devices mechanically coupled to the lid and electrically coupled to the one or more first electrically conductive leads; and (d) one or more first micro-electrical-mechanical system devices mechanically coupled to the lid and electrically coupled to the one or more first electrically conductive leads. At least one of the lid or the base can have at least one port hole. The one or more first electrically conductive leads can be configured to couple to the printed circuit board. Other embodiments are disclosed.

Abstract: A touch panel includes a first substrate having a plurality of lower electrodes; a second substrate spaced a distance apart from the lower substrate and having a plurality of upper electrodes that correspond to the lower electrodes; a conductive rubber layer interposed between the lower electrodes and the upper electrodes; and a plurality of organic transistors interposed between the lower electrodes and the upper electrodes and to be connected to a top or bottom portion of the conductive rubber layer.

Abstract: A ferroelectric device comprises: a silicon substrate (a first substrate); a lower electrode (a first electrode) formed on one surface side of first substrate; a ferroelectric film formed on a surface of lower electrode opposite to first substrate side; and an upper electrode (a second electrode) formed on a surface of ferroelectric film opposite to lower electrode side. The ferroelectric film is formed of a ferroelectric material with a lattice constant difference from silicon. The ferroelectric device further comprises a shock absorbing layer formed of a material with better lattice matching with ferroelectric film than silicon and provided directly below the lower electrode. The first substrate is provided with a cavity that exposes a surface of shock absorbing layer opposite to lower electrode side.

Abstract: In one embodiment, a method of forming a MEMS device includes providing a substrate, forming a sacrificial layer above the substrate layer, forming a silicon based working portion on the sacrificial layer, releasing the silicon based working portion from the sacrificial layer such that the working portion includes at least one exposed outer surface, forming a first layer of silicide forming metal on the at least one exposed outer surface of the silicon based working portion, and forming a first silicide layer with the first layer of silicide forming metal.

Abstract: A micro-electromechanical system (MEMS) device can include a substrate and a first beam suspended relative to a substrate surface. The first beam can include a first portion and a second portion that are separated by an isolation joint made of an insulative material. The first and second portions can each include a first semiconductor and a first dielectric layer. The MEMS device can also include a second beam suspended relative to the substrate surface. The second beam can include a second semiconductor and a second dielectric layer to promote curvature of the second beam. The MEMS device can also include a third beam suspended relative to the substrate surface. The third beam consists essentially of a first material. The second beam is configured to move relative to the third beam in response to an acceleration along an axis perpendicular to the surface of the substrate.

Abstract: An integrated circuit structure includes a triple-axis accelerometer, which further includes a proof-mass formed of a semiconductor material; a first spring formed of the semiconductor material and connected to the proof-mass, wherein the first spring is configured to allow the proof-mass to move in a first direction in a plane; and a second spring formed of the semiconductor material and connected to the proof-mass. The second spring is configured to allow the proof-mass to move in a second direction in the plane and perpendicular to the first direction. The triple-axis accelerometer further includes a conductive capacitor plate including a portion directly over, and spaced apart from, the proof-mass, wherein the conductive capacitor plate and the proof-mass form a capacitor; an anchor electrode contacting a semiconductor region; and a transition region connecting the anchor electrode and the conductive capacitor plate, wherein the transition region is slanted.

Abstract: A pressure detecting device includes a glass substrate as a substrate, a lower electrode arranged on the glass substrate, an upper electrode spaced apart from the lower electrode and facing the lower electrode, the upper electrode having holes as one or more through-openings, and a source line as a change extracting wiring for detecting a change in electrical state caused by the upper electrode receiving pressure to deflect toward the lower electrode.

Abstract: A transducer array on a common substrate includes a membrane and first and second transducer devices. The membrane is formed on the common substrate, and includes a lower layer and an upper layer. The first transducer device includes a first resonator stack formed on at least the lower layer in a first portion of the membrane, the upper layer having a first thickness in the first portion of the membrane. The second transducer device includes a second resonator stack formed on at least the lower layer in a second portion of the membrane, the upper layer having a second thickness in the second portion of the membrane, where the second thickness is different from the first thickness, such that a first resonant frequency of the first transducer device is different from a second resonant frequency of the second transducer device.

Abstract: A suspended beam includes a substrate, a main body and a first metal line structure. A first end of the main body is fixed onto the substrate. A second end of the main body is suspended. The first metal line structure is embedded in the main body. The width of the first metal line structure is smaller than the width of the main body.

Abstract: In one embodiment, a method of opening a passageway to a cavity includes providing a donor portion, forming a heating element adjacent to the donor portion, forming a first sacrificial slab abutting the donor portion, wherein the donor portion and the sacrificial slab are a shrinkable pair, forming a first cavity, a portion of the first cavity bounded by the first sacrificial slab, generating heat with the heating element, forming a first reduced volume slab from the first sacrificial slab using the generated heat and the donor portion, and forming a passageway to the first cavity by forming the first reduced volume slab.