Abstract: A method of fabricating a micro-electrical-mechanical system (MEMS) apparatus on a substrate (10) comprises the steps of processing the substrate (10) so as to fabricate an electronic circuit (11); depositing a first electrode (15) that is operably coupled with the electronic circuit (11); depositing a membrane (16) so that it is mechanically coupled to the first electrode (15); applying a sacrificial layer (50); depositing a structural layer (18) and a second electrode (17) that is operably coupled with the electronic circuit (11) so that the sacrificial layer (50) is disposed between the membrane (16) and the structural layer (18) so as to form a preliminary structure; singulating the substrate (10); and removing the sacrificial layer (50) so as to form a MEMS structure, in which the step of singulating the substrate (10) is carried out before the step of removing the sacrificial layer (50).

Abstract: A semiconductor device includes a first semiconductor substrate, a second semiconductor substrate, and a sealing member. The first semiconductor substrate has a surface and includes a sensing portion on the surface side. The sensing portion has a movable portion. The first semiconductor substrate and the second semiconductor substrate are bonded together to form a stacked substrate. The stacked substrate defines a hermetically sealed space for accommodating the sensing portion between the first and second semiconductor substrates. The stacked substrate further defines a recess extending between the first semiconductor substrate and the second semiconductor substrate to penetrate an interface between the first semiconductor substrate and the second semiconductor substrate. The sealing member is located in the recess.

Abstract: A sensor device includes a semiconductor chip. The semiconductor chip has a sensing region sensitive to mechanical loading. A pillar is mechanically coupled to the sensing region.

Abstract: A design structure for an integrated radio frequency (RF) filter on a backside of a semiconductor substrate includes: a device on a first side of a substrate; a radio frequency (RF) filter on a backside of the substrate; and at least one substrate conductor extending from the front side of the substrate to the backside of the substrate and electrically coupling the RF filter to the device.

Abstract: A micro electro mechanical system (MEMS) structure includes a first substrate structure including a bonding pad structure. The bonding pad structure has at least one recess therein. A second substrate structure is bonded with the bonding pad structure of the first substrate structure.

Abstract: A microstructure device package includes a package housing configured and adapted to house a microstructure device. A bracket is housed in the package housing. The bracket includes a bracket base with a first bracket arm and a second bracket arm each extending from the bracket base. A channel is defined between the first and second bracket arms. The first bracket aim defines a first mounting surface facing inward with respect to the channel. The second bracket aim defines a second mounting surface facing outward with respect to the channel. The second mounting surface of the bracket is mounted to the package housing. A microstructure device is mounted to the first mounting surface in the channel. The bracket is configured and adapted to isolate the microstructure device from packaging stress imparted from the package housing on the second mounting surface of the bracket.

Abstract: The present disclosure proposes a method for manufacturing in a MEMS device a low-resistance contact between a silicon-germanium layer and a layer contacted by this silicon-germanium layer, such as a CMOS metal layer or another silicon-germanium layer, through an opening in a dielectric layer stack separating both layers. An interlayer is formed in this opening, thereby covering at least the sidewalls of the opening on the exposed surface of the another layer at the bottom of this opening. This interlayer may comprise a TiN layer in contact with the silicon-germanium layer. This interlayer can further comprise a Ti layer in between the TiN layer and the layer to be contacted. In another embodiment this interlayer comprises a TaN layer in contact with the silicon-germanium layer. This interlayer can then further comprise a Ta layer in between the TaN layer and the layer to be contacted.

Abstract: One-dimensional acceleration sensor includes: a semiconductor substrate having a constant thickness; parallel second through trenches through the substrate defining a flexible beam therebetween, having width significantly smaller than thickness; four piezo resistors formed at four corner regions of the flexible beam; first through trench through the substrate, continuous with ends of the first through trenches to define a weight continuous with one end of the flexible beam, including a pair of symmetrical first portions sandwiching the flexible beam and a second portion coupling the first portions and one end of the flexible beam, and having a center of gravity at an intermediate position on a longitudinal center line of the flexible beam; and one-layer wirings formed above the flexible beam, serially connecting piezo resistors at a same edge, and leading interconnection points generally along a longitudinal direction of the flexible beam.

Abstract: A MEMS device comprises a membrane layer and a back-plate layer formed over the membrane layer. The membrane layer comprises an outer portion and an inner portion raised relative to the outer portion and a sidewall for connecting the inner portion and the outer portion. The sidewall is non-orthogonal to the outer portion.

Abstract: A plurality of three-dimensional structure configuring devices, each including an elastic body in which micro three-dimensional structure elements fixed to a substrate member are placed so as to be covered therewith and which is fixed to the substrate member, are placed within a film-like elastic body with the substrate members thereof spaced apart from one another so as to configure a three-dimensional structure. Thereby, the plurality of three-dimensional structure configuring devices can be placed with desired intervals of arrangement and in desired positions within the film-like elastic body and so that various specifications can be addressed.

Abstract: A micro-electro-mechanical system (MEMS), methods of forming the MEMS and design structures are provided. The method comprises forming a coplanar waveguide (CPW) comprising a signal electrode and a pair of electrodes on a substrate. The method comprises forming a first sacrificial material over the CPW, and a wiring layer over the first sacrificial material and above the CPW. The method comprises forming a second sacrificial material layer over the wiring layer, and forming insulator material about the first sacrificial material and the second sacrificial material. The method comprises forming at least one vent hole in the insulator material to expose portions of the second sacrificial material, and removing the first and second sacrificial material through the vent hole to form a cavity structure about the wiring layer and which exposes the signal line and pair of electrodes below the wiring layer. The vent hole is sealed with sealing material.

Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming at least one fixed electrode on a substrate. The method further includes forming a Micro-Electro-Mechanical System (MEMS) beam with a varying width dimension, as viewed from a top of the MEMS beam, over the at least one fixed electrode.

Abstract: A compact MEMS motion sensor device is provided, including a CMOS substrate layer, with plural anchor posts having an isolation oxide layer surrounding a conductive layer. On one side of CMOS substrate layer, the device further includes a field oxide (FOX) layer, a first set and a second set of implant doped silicon areas, a first polysilicon layer, an oxide layer embedded with plural metal layers interleaved with via hole layers, a Nitride deposition layer, an under bump metal (UBM) layer and a plurality of solder spheres. On the other side of CMOS substrate layer, the present invention further includes a backside interconnect isolation oxide layer, a first MEMS bonding layer, a first metal compound layer, a second MEMS bonding layer, a MEMS layer, a first MEMS eutectic bonding layer, a second metal compound layer, a second MEMS eutectic bonding layer, and a MEMS cap layer.

Abstract: A sensing unit package with reduced size and improved thermal sensing capabilities. An exemplary package includes a printed circuit board with a plurality of electrical traces, an application-specific integrated circuit (Analog ASIC) chip, and a micromachined sensor formed on a microelectromechanical system (MEMS) die. The Analog ASIC chip is electrically and mechanically attached to the printed circuit board. The MEMS die is in direct electrical communication with only a portion of the electrical traces of the printed circuit board and is mechanically and thermally attached directly to the Analog ASIC chip. A thermally conducting compound is located between the MEMS die and the Analog ASIC chip. One or more solder balls electrically attach the Analog ASIC chip to the printed circuit board and one or more solder traces electrically attach the MEMS die to the printed circuit board.

Abstract: A transistor device includes a magnetic field source adapted to deflect a flow of free electron carriers within a channel of the device, between a source region and a drain region thereof. According to preferred configurations, the magnetic field source includes a magnetic material layer extending over a side of the channel that is opposite a gate electrode of the transistor device.

Abstract: A sensor element array and method of fabricating the same are provided. The sensor element array is disposed on a substrate and includes a first patterned conductive layer, a channel layer, a first insulation layer, a second patterned conductive layer, a second insulation layer, and a third patterned conductive layer. The first patterned conductive layer includes a sensing line, a first power line, a source/drain pattern and a branch pattern. The channel layer includes a first channel and a second channel. Margins of the first insulation layer and the second patterned conductive layer are substantially overlapped. The second patterned conductive layer includes a selecting line, a gate pattern, and a gate connecting pattern. The second insulation layer has a first connecting opening for exposing the gate connecting pattern. The third patterned conductive layer includes a sensing electrode electrically connected to the gate connecting pattern.

Abstract: A surface mountable package includes a base and a cover with a cavity defined thereby, and an acoustic transducer unit received in the cavity. The cover includes a first metal ring to enclose the acoustic transducer unit. The base includes a second metal ring to press against the first metal ring in order to form a metal shielding area. First and second metal connecting paths are formed electrically connected to the metal shielding area and the acoustic transducer unit, respectively. Besides, two pairs of first and second surface mountable metal electrodes are electrically connected to the first and the second metal connecting paths, respectively. As a result, the package can be selectively double surface mountable to a user's circuit board via the metal electrodes of the base or the metal electrodes of the cover.

Abstract: A structure includes a silicon layer disposed on a buried oxide layer that is disposed on a substrate; at least one transistor device formed on or in the silicon layer, the at least one transistor having metallization; a released region of the silicon layer disposed over a cavity in the buried oxide layer; a back end of line (BEOL) dielectric film stack overlying the silicon layer and the at least one transistor device; a nitride layer overlying the BEOL dielectric film stack; a hard mask formed as a layer of hafnium oxide overlying the nitride layer; and an opening made through the layer of hafnium oxide, the layer of nitride and the BEOL dielectric film stack to expose the released region of the silicon layer disposed over the cavity in the buried oxide layer. The hard mask protects the underlying material during a MEMS/NEMS HF vapor release procedure.

Abstract: A device structure is made using a first conductive layer over a first wafer. An isolated conductive region is formed in the first conductive layer surrounded by a first opening in the conductive layer. A second wafer has a first insulating layer and a conductive substrate, wherein the conductive substrate has a first major surface adjacent to the first insulating layer. The insulating layer is attached to the isolated conductive region. The conductive substrate is thinned to form a second conductive layer. A second opening is formed through the second conductive layer and the first insulating layer to the isolated conductive region. The second opening is filled with a conductive plug wherein the conductive plug contacts the isolated conductive region. The second conductive region is etched to form a movable finger over the isolated conductive region. A portion of the insulating layer under the movable finger is removed.

Abstract: Embodiments include methods for forming a device comprising a conductive substrate, a micro electro-mechanical systems (MEMS) structure, and a plurality of bond pads. The conductive substrate has a first side and a second side, the second side opposite the first side. The MEMS structure is formed over the first side of the conductive substrate. The plurality of bond pads are formed over the first side of the conductive substrate and electrically coupled to the first side of the conductive substrate. The conductive substrate and plurality of bond pads function to provide electrostatic shielding to the MEMS structure.

Abstract: A capacitive micromachined ultrasonic transducer (CMUT), which has a conductive structure that can vibrate over a cavity, has a number of vent holes that are formed in the bottom surface of the cavity. The vent holes eliminate the deflection of the CMUT membrane due to atmospheric pressure which, in turn, allows the CMUT to receive and transmit low frequency ultrasonic waves.

Abstract: A method includes forming a Micro-Electro-Mechanical System (MEMS) device on a front surface of a substrate. After the step of forming the MEMS device, a through-opening is formed in the substrate, wherein the through-opening is formed from a backside of the substrate. The through-opening is filled with a dielectric material, which insulates a first portion of the substrate from a second portion of the substrate. An electrical connection is formed on the backside of the substrate. The electrical connection is electrically coupled to the MEMS device through the first portion of the substrate.

Abstract: A MEMS acoustic transducer is provided, which includes a substrate, a MEMS chip, and a housing. The substrate has a first opening area and a lower electrode layer disposed over a surface of the substrate, wherein the first opening area includes at least one hole allowing acoustic pressure to enter the MEMS acoustic transducer. The MEMS chip is disposed over the surface of the substrate, including a second opening area and an upper electrode layer partially sealing the second opening area, wherein the upper electrode layer and the lower electrode layer, which are parallel to each other and have a gap therebetween, form an induction capacitor. The housing is disposed over the MEMS chip or the surface of the substrate creating a cavity with the MEMS chip or the substrate. In addition, a method for fabricating the above MEMS acoustic transducer is also provided.

Abstract: A micro structure and an electric circuit included in a micro electro mechanical device are manufactured over the same insulating surface in the same step. In the micro electro mechanical device, an electric circuit including a transistor and a micro structure are integrated over a substrate having an insulating surface. The micro structure includes a structural layer having the same stacked-layer structure as a layered product of a gate insulating layer of the transistor and a semiconductor layer provided over the gate insulating layer. That is, the structural layer includes layers formed of the same insulating film as the gate insulating layer and the same semiconductor film as the semiconductor layer of the transistor. Further, the micro structure is manufactured by using each of conductive layers used for a gate electrode, a source electrode, and a drain electrode of the transistor as a sacrificial layer.

Abstract: An electromechanical transducer includes a plurality cells that are electrically connected to form a unit. Each of the cells includes a first electrode and a second electrode provided with a gap being disposed therebetween. Dummy cells that are not electrically connected to the cells are provided around the outer periphery of the unit of the cells.

Abstract: A method of forming a MEMS device includes forming a sacrificial layer over a substrate. The method further includes forming a metal layer over the sacrificial layer and forming a protection layer overlying the metal layer. The method further includes etching the protection layer and the metal layer to form a structure having a remaining portion of the protection layer formed over a remaining portion of the metal layer. The method further includes etching the sacrificial layer to form a movable portion of the MEMS device, wherein the remaining portion of the protection layer protects the remaining portion of the metal layer during the etching of the sacrificial layer to form the movable portion of the MEMS device.

Abstract: There is provided an electric device including a base member, a beam elastically deformable to bend upward and having an outline partially defined by a slit formed in the base member, a conductive pattern provided on a top surface of the beam, a contact electrode provided above the conductive pattern, the contact electrode coming into contact with the conductive pattern, and a bridge electrode elastically deformable, the bridge electrode connecting the conductive pattern and a portion of the base member outside the outline.

Abstract: A fully embedded micromechanical device and a system on chip is manufactured on an SOI-substrate. The micromechanical device comprises a moveable component having a laterally extending upper and lower surface and vertical side surfaces. The upper surface is adjacent to an upper gap which laterally extends over at least a part of the upper surface and results from the removal of a shallow trench insulation material. The lower surface is adjacent to a lower gap which laterally extends over at least a part of the lower surface and results from the removal of the buried silicon oxide layer. The side surfaces of the movable component are adjacent to side gaps which surround at least a part of the vertical side surfaces of the moveable component and result from the removal of a deep trench insulation material.

Abstract: Embodiments related to semiconductor manufacturing and semiconductor devices with semiconductor structure are described and depicted.

Abstract: A strain absorption bridge for use in a MEMS package includes a first substrate that is configured to be attachable to a circuit board. A first elastically deformable element is coupled to the first substrate and the first elastically deformable element is configured to be attachable to a MEMS device. Alternatively, the MEMS device may be attached to the first substrate. The elastically deformable element at least partially absorbs and dissipates mechanical strain communicated from the circuit board before the mechanical strain can reach the MEMS device.

Abstract: A semiconductor sensor device is packaged using a footed lid instead of a pre-molded lead frame. A semiconductor sensor die is attached to a first side of a lead frame. The die is then electrically connected to leads of the lead frame. A gel material is dispensed onto the sensor die. The footed lid is attached to the substrate such that the footed lid covers the sensor die and the electrical connections between the die and the lead frame. A molding compound is then formed over the substrate and the footed lid such that the molding compound covers the substrate, the sensor die and the footed lid.

Abstract: This disclosure provides systems, methods and apparatus for glass-encapsulated pressure sensors. In one aspect, a glass-encapsulated pressure sensor may include a glass substrate, an electromechanical pressure sensor, an integrated circuit device, and a cover glass. The cover glass may be bonded to the glass substrate with an adhesive, such as epoxy, glass frit, or a metal bond ring. The cover glass may have any of a number of configurations. In some configurations, the cover glass may partially define a port for the electromechanical pressure sensor at an edge of the glass-encapsulated pressure sensor. In some configurations, the cover glass may form a cavity to accommodate the integrated circuit device that is separate from a cavity that accommodates the electromechanical pressure sensor.

Abstract: A micro movable device according to an embodiment of the present invention may include a signal line formed on a support substrate, a ground line formed on the support substrate and arranged side by side with the signal line, a first driving electrode formed above the signal line, a second driving electrode formed above the ground line, a first auxiliary driving electrode arranged side by side with the first driving electrode, a second auxiliary driving electrode arranged side by side with the second driving electrode, and a movable electrode which is formed above the first driving electrode, the second driving electrode, the first auxiliary driving electrode and the second auxiliary driving electrode with a space therebetween, and which is supported on the support substrate.

Abstract: Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS devices, methods of manufacture and design structure are provided. The method includes forming a single crystalline beam from a silicon layer on an insulator. The method further includes providing a coating of insulator material over the single crystalline beam. The method further includes forming a via through the insulator material exposing a wafer underlying the insulator. The insulator material remains over the single crystalline beam. The method further includes providing a sacrificial material in the via and over the insulator material. The method further includes providing a lid on the sacrificial material. The method further includes venting, through the lid, the sacrificial material and a portion of the wafer under the single crystalline beam to form an upper cavity above the single crystalline beam and a lower cavity in the wafer, below the single crystalline beam.

Abstract: A microelectro mechanical system (MEMS) assembly includes a carrier and a MEMS device disposed over the carrier. A buffer layer is disposed over the MEMS device. The Young's modulus of the buffer layer is less than that of the MEMS device.

Abstract: Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS devices, methods of manufacture and design structure are provided. The method includes forming a single crystalline beam from a silicon layer on an insulator. The method further includes providing a coating of insulator material over the single crystalline beam. The method further includes forming a via through the insulator material. The method further includes providing a sacrificial material in the via and over the insulator material. The method further includes providing a lid on the sacrificial material. The method further includes providing further sacrificial material in a trench of a lower wafer. The method further includes bonding the lower wafer to the insulator, under the single crystalline beam. The method further includes venting the sacrificial material and the further sacrificial material to form an upper cavity above the single crystalline beam and a lower cavity, below the single crystalline beam.

Abstract: Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS processes, methods of manufacture and design structures are disclosed. The method includes forming at least one beam comprising amorphous silicon material and providing an insulator material over and adjacent to the amorphous silicon beam. The method further includes forming a via through the insulator material and exposing a material underlying the amorphous silicon beam. The method further includes providing a sacrificial material in the via and over the amorphous silicon beam. The method further includes providing a lid on the sacrificial material and over the insulator material. The method further includes venting, through the lid, the sacrificial material and the underlying material to form an upper cavity above the amorphous silicon beam and a lower cavity below the amorphous silicon beam, respectively.

Abstract: One aspect of the invention relates to an ultrathin micro-electromechanical chemical sensing device which uses swelling or straining of a reactive organic material for sensing. In certain embodiments, the device comprises a contact on-off switch chemical sensor. For example, the device can comprises a small gap separating two electrodes, wherein the gap can be closed as a result of the swelling or stressing of an organic polymer coating on one or both sides of the gap. In certain embodiments, the swelling or stressing is due to the organic polymer reacting with a target analyte.

Abstract: A micro electromechanical system (MEMS) includes a substrate, a first curved surface located at a position above a surface of the substrate, and a second curved surface generally opposite to the first curved surface along a first axis parallel to the surface of the substrate, wherein the first curved surface is movable along the first axis in a direction toward the second curved surface.

Abstract: The present invention discloses an MEMS capacitive microphone including a rigid diaphragm arranged on an elastic element. When a sound wave acts on the rigid diaphragm, the rigid diaphragm is moved parallel to a normal of a back plate by elasticity of the elastic element. Thereby the variation of the capacitance is obtained between the rigid diaphragm and the back plate.

Abstract: A manufacturing method for a hollow sealing structure, includes, a process for filling a recessed portion in a principal surface of a substrate with a first sacrificial layer, a process for forming a functional element portion on the principal surface of the substrate, a process for forming a second sacrificial layer on the functional element portion so as to be connected to a part of the first sacrificial layer, a process for forming a covering portion over respective surfaces of the first and second sacrificial layers, a process for circulating a fluid for sacrificial layer removal through an opening in the covering portion in contact with the first sacrificial layer, thereby removing the first and second sacrificial layers, and a process for closing the opening.

Abstract: A semiconductor pressure sensor includes a first substrate having a concave portion and an alignment mark at a main surface thereof, and a second substrate formed on the main surface of the first substrate and having a diaphragm provided to cover a space inside the concave portion of the first substrate and a gauge resistor provided on the diaphragm. The alignment mark is provided to be exposed from the second substrate. Accordingly, it is possible to obtain a semiconductor pressure sensor and a method of manufacturing the same with reduced production costs and with improved pressure measuring accuracy.

Abstract: A microsystem includes a base layer formed from an electrical insulating material. The base layer has an inner surface defining a cavity and an external surface opposed to the inner surface, and in direct communication with an environment. A cap layer and a microelectromechanical (MEMS) device layer are formed from electrical insulating material or an other electrical insulating material. The cap has an inner surface defining a cavity, and an external surface opposed to the inner surface, and in direct communication with the environment. A MEMS device on/in the MEMS device layer is disposed between the base and the cap. Respective adjacent portions of the base, the cap and the device substrate are bonded to define an enclosed space. The enclosed space at least partially includes the base cavity or the cap cavity. At least a portion of a MEMS device on the device layer is in the enclosed space.

Abstract: Micro-Electro-Mechanical System (MEMS) structures, metrology structures and methods of manufacture are disclosed. The method includes forming one or metrology structure, during formation of a device in a chip area. The method further includes venting the one or more metrology structure after formation of the device.

Abstract: A micromechanical systems (MEMs) pressure sensor includes a semiconductor substrate having a deep well located within a first surface and a cavity located within a second, opposing surface. The semiconductor substrate has a first doping type. The deep well has a second doping type, with a gradient doping profile, thereby forming a PN junction within the substrate. The cavity forms a diaphragm, which is a substrate section that is thinner than the surrounding substrate sections, that comprises the deep well. One or more pizeoresistor elements are located within the deep well. The piezoresistors are sensitive to deformations, such as bending, in the diaphragm caused by changes in the pressure of the cavity.

Abstract: Package (BT) for vacuum encapsulation of a microelectromechanical system (MEMS) provided with an electrically conductive element intended to be soldered to said package (BT), said package (BT) comprising a metallized base (FM), designed to be soldered to said microelectromechanical system (MEMS), and output electrical contacts (CES), electrically connected to electrical-contact elements of said microelectromechanical system. Said metallized base (FM) comprises a plurality of metallized surface portions (PSM), respectively bounded by an unmetallized solder stop region, and respectively connected to the rest of the metallized base (FM) by a metallized track (PTEM), having a small width relative to the corresponding width of said portion (PSM), said metallized surface portions (PSM) being designed to be soldered to said microelectromechanical system (MEMS).

Abstract: Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods may include attaching a die to a carrier material, forming dielectric material surrounding the die, forming buildup layers in the dielectric material to form a coreless bumpless buildup package structure, and patterning the carrier material to form microchannel structures on the package structure.

Abstract: A method that includes forming an opening between at least one first electrode and a second electrode by forming a recess in a first electrode layer, the recess having sidewalls that correspond to a surface of the at least one first electrode, forming a first sacrificial layer on the sidewalls of the recess, the first sacrificial layer having a first width that corresponds to a second width of the opening, forming a second electrode layer in the recess that corresponds to the second electrode, and removing the first sacrificial layer to form the opening between the second electrode and the at least one first electrode.

Abstract: To provide a semiconductor device prevented from giving a limitation on the sensitivity of HEMS devices due to isolation regions thereof and a method of fabricating the same.

Abstract: A method of enclosing a micromechanical element formed between a base layer and one or more metallization layers includes forming one or more encapsulating layers over the micromechanical element and providing an encapsulating wall surrounding the element extending between the base layer and the one or more encapsulating layers. An electrical connection is provided between the base layers and the one or more metallization layers formed above the micromechanical element.